Electromagnetic analysis using transmission line variables

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Electromagnetic analysis using transmission line variables / Maurice Weiner

版:: 2nd ed.
資料種別:: 図書
出版情報:: Singapore : World Scientific, c2010
形態:: xxi, 492 p. ; 24 cm
著者名:: Weiner, Maurice
ISBN:: 9789814287487 [9814287482]
書誌ID:: BB05206809

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注記:

Includes bibliographical references and index

主題:

電磁気学

言語:

英語

目次情報:

Preface

Introduction to Transmission Lines and Their Application to Electromagnetic Phenomena / 1：

Simple Experimental Example / 1.1：

Examples of Impulse Sources / 1.2：

Model Outline / 1.3：

Application of Model to Small Node Resistance / 1.4：

Transmission Line Theory Background / 1.5：

Initial Conditions of Special Interest / 1.6：

One Dimensional TLM Analysis. Comparison with Finite Difference Method

TLM Iteration Method / 1.7：

Reverse TLM Iteration / 1.8：

Derivation of Scattering Coefficients For Reverse Iteration / 1.9：

Complete TLM Iteration (Combining Forward and Reverse Iterations) / 1.10：

Finite Difference Method. Comparison with TLM Method / 1.11：

Two Dimensional TLM Analysis. Comparison with Finite Difference Method

Boundary Conditions at 2D Node / 1.12：

Static Behavior about 2D Node / 1.13：

Non-static Example: Wave Incident on 2D node / 1.14：

Integral Rotational Properties of Field about the Node / 1.15：

2D TLM Iteration Method for Nine Cell Core Matrix / 1.16：

2D Finite Difference Method. Comparison with TLM Method / 1.17：

Final Comments: Inclusion of Time Varying Signals and Phase Coherence / 1.18：

Appendices

Effect of Additional Paths on Weighing Process / App. 1A.1：

Novel Applications of TLM Method: Description of Neurological Activity Using the TLM Method / App. 1A.2：

Notation and Mapping of Physical Properties / 2：

1D Cell Notation and Mapping of Conductivity and Field / 2.1：

Neighboring 1D Cells with Unequal Impedance / 2.2：

2D Cell Notation, Mapping of Conductivity and Field / 2.3：

Simultaneous Conductivity Contributions / 2.4：

3D Cell Notation, Mapping of Conductivity and Field / 2.5：

Other Node Controlled Properties

Node Control of 2D Scattering Coefficients Due to Finite Node Resistance / 2.6：

Signal Gain / 2.7：

Signal Generation. Use of Node Coupling / 2.8：

Mode Conversion / 2.9：

Example of Mapping: Node Resistance in Photoconductive Semiconductor

Semiconductor Switch Geometry (2D) / 2.10：

Node Resistance Profile in Semiconductor / 2.11：

Scattering Equations / 3：

1D Scattering Equation / 3.1：

2D Scattering Equations / 3.2：

Effect of Symmetry on Scattering Coefficients / 3.3：

3D Scattering Equations: Coplanar Scattering / 3.4：

General Scattering, Including Scattering Normal to Propagation Plane

Simple 3D Equivalent TLM Circuit / 3.5：

Quasi-Coupling / 3.6：

Neglect of Quasi-Coupling / 3.7：

Simple Quasi-Coupling Circuit. First Order Approximation / 3.8：

Correction to Quasi-Coupling Circuit: Second Order Approximation / 3.9：

Calculation of Load Impedance with Quasi-Coupling / 3.10：

Small Coupling Approximation of Second Order Quasi-Coupling / 3.11：

General 3D Scattering Process Using Cell Notation / 3.12：

Complete Iterative Equations / 3.13：

Contribution of Electric and Magnetic Fields to the Total Energy / 3.14：

Plane Wave Behavior

Response of 2D Cell Matrix to Input Plane Wave / 3.15：

Response of 2D Cell Matrix to Input Waves with Arbitrary Amplitudes / 3.16：

Response of 3D Cell Matrix to Input Plane Wave / 3.17：

Final Comments of Uniform Waves versus Plane Waves / 3.18：

Consistency of 3D Circuit with the TLM Static Solutions / App. 3A.1：

3D Scattering Coefficients, Without Quasi-Coupling in Terms of Circuit Parameters / App. 3A.2：

3D Scattering Coefficients with Both Coplanar and Aplanar Contributions into Unit Cell Lines (yz and zx Planes) / App. 3A.3：

3D Scattering Equations: with Both Coplanar and Aplanar Contributions into Unit Cell Lines (yz and zx Planes) / App. 3A.4：

Corrections for Plane Waves and Grid Anisotropy Effects / 4：

Partition of TLM Waves into Component Waves / 4.1：

Scattering Corrections for 2D Plane Waves: Plane Wave Correlations Between Cells / 4.2：

Changes to 2D Scattering Coefficients / 4.3：

Corrections to Plane Wave Correlations

Correlation of Waves in Adjoining Media with Differing Dielectric Constants / 4.4：

Modification of Wave Correlation Adjacent a Conducting Boundary / 4.5：

Decorrelation Processes

Decorrelation Due to Sign Disparity of Plane and Symmetric Waves / 4.6：

Related Scattering Criteria and Sign Conditions for Removal of the Sign Disparity / 4.7：

Minimal Solution Using Differing Decorrelation Factors to Remove Sign Disparities / 4.8：

Decorrelation of Forward and Backward Plane Waves with Same Polarity in Neighboring Series TLM Lines Without Losses / 4.9：

Decorrelation of Forward and Backward Plane Waves with the Same Polarity Occupying the Same TLM Line / 4.10：

Decorrelation Treatment at Boundary Interfaces / 4.11：

Comments on Interaction of Plane Wave Front with a Half-Infinite Conducting Plane / 4.12：

Summary of Correlation/Decorrelation Processes / 4.13：

Treatment of Grid Orientation Effects

Dependence of Wave Energy Dispersal on Grid Orientation for Symmetric and Plane Waves / 4.14：

Selection of Grid for Plane Waves / 4.15：

Transformation Properties between Grids / 4.16：

Possible Mini-Plane Wave Fronts Associated with Each Cell. Plane Wave Partitioning / 4.17：

Grid(s) Selection. Propagation Vector Independence

Transformation of Fields to Principal Grid / 4.18：

Incorporation of Symmetric Waves / 4.19：

Iteration Method Using Principal Grid Transformations / 4.20：

Treatment of Separate TLM Correlated Wave Sources / 4.21：

Final Comments / 4.22：

3D Scattering Corrections of Plane Waves (Plane Wave Correlations) / App. 4A.1：

Consistency of Plane Wave Correlations with a Simple Quantum Mechanical Model / App. 4A.2：

Boundary Conditions and Dispersion / 5：

Dielectric-Dielectric Interface / 5.1：

Node Coupling: Nearest Node and Multi-Coupled Node Approximations

Nearest Nodes for 1D Interface / 5.2：

Nearest Nodes at 2D Interface / 5.3：

Truncated Cells and Oblique Interface / 5.4：

Cell Index Notation at a Dielectric Interface Used in Simulations / 5.5：

Simplified Iteration Neglecting the Nearest Node Approximation / 5.6：

Non-Uniform Dielectric. Use of Cluster Cells / 5.7：

Other Boundary Conditions

Dielectric - Open Circuit Interface / 5.8：

Dielectric - Conductor Interface / 5.9：

Input/Output Conditions / 5.10：

Composite Transmission Line / 5.11：

Determination of Initial Static Field by TLM Method / 5.12：

Dispersion

TLM Methods for Treating Dispersion / 5.13：

Dispersion Sources / 5.14：

Dispersion Example / 5.15：

Propagation Velocity Dispersion / 5.16：

Node Resistance Dispersion / 5.17：

Anomalous Dispersion / 5.18：

Incorporation of Dispersion into TLM Formulation

Dispersion Approximations / 5.19：

Outline of Dispersion Calculation Using the TLM Method / 5.20：

One Dimensional Dispersion Iteration / 5.21：

Initial Conditions with Dispersion Present / 5.22：

Stability of Initial Profiles with Dispersion Present / 5.23：

Replacement of Non-uniform Field in Cell with Effective Uniform Field / 5.24：

Appendix

Specification of Input/Output Node Resistance to Eliminate Multiple Reflections / App. 5A.1：

Cell Discharge Properties and Integration of Transport Phenomena into the Transmission Line Matrix / 6：

Charge Transfer between Cells / 6.1：

Relationship between Field and Cell Charge / 6.2：

Dependence of Conductivity on Carrier Properties / 6.3：

Integration of Carrier Transport Using TLM Notation. Changes in Cell Occupancy and Its Effect on the TLM Iteration

General Continuity Equations / 6.4：

Carrier Generation Due to Light Activation / 6.5：

Carrier Generation Due to Avalanching: Identical Hole and Electron Drift Velocities / 6.6：

Avalanching with Differing Hole and Electron Drift Velocities / 6.7：

Two Step Generation Process / 6.8：

Recombination / 6.9：

Limitations of Simple Exponential Recovery Model / 6.10：

Carrier Drift / 6.11：

Cell Charge Iteration. Equivalence of Drift and Inter-Cell Currents Using TLM Notation / 6.12：

Carrier Diffusion / 6.13：

Frequency of Transport Iteration / 6.14：

Total Contribution to Changes in Carrier Cell Occupancy / 6.15：

Description of TLM Iteration / 7：

Specification of Geometry / 7.1：

Use of TLM Matrix / 7.2：

Various Regions which Incorporate Plane Wave Correlation/Decorrelation (PWC Effects) into the Iteration / 7.3：

Simplified Decorrelation Procedure Used for Simulations in Chapter VII / 7.4：

Description of Inputs, Arrays, and Initial Conditions / 7.5：

Plane Wave Correllation (PWC) Inputs / 7.6：

Iteration Outline / 7.7：

Node Resistance R(n,m) Changes. Use of Light Activation / 7.8：

Symmetric Scattering Simulations

Symmetric Field Evolution with and without Node Activation / 7.9：

PWC Simulations. Comparison of PWC and Symmetric Results

Comparison of Output Waveforms and Static Profiles for Symmetric and PWC Simulations / 7.10：

Comparison of Forward and Backward Waves when Using Wave Correlation / 7.11：

Risetime and Alternating Field Effects in the Guided Region / 7.12：

Field Profile Evolution during Transient Charge-up Phase / 7.13：

Effect of Load Mismatch on Output and Field Profile / 7.14：

Node Recovery and its Effect on Output Pulse and Field Profile / 7.15：

Effects of Risetime on Conductivity / 7.16：

Partial Activation of Nodes and Effect on Profiles and Output / 7.17：

Cell Charge Following Recovery / 7.18：

Role of TLM Waves at Charged Boundary / 7.19：

Incorporation of 3D Scattering Parameters into 2D Iteration. Application to Magnetostatic Solutions / 7.20：

Summary: Comparison of PWC and Symmetric Simulation Results / 7.21：

Outline Discussion of Program Statements for Activated Semiconductor Switch / 7A.1：

Program Statements for Optically Activated Semiconductor Switch / 7A.2：

Matching Node Resistors for Input & Output Sections / 7A.3：

Field Decay in Semiconductor Using the TLM Formulation / 7A.4：

Spice Solutions / 8：

Photoconductive/Avalanche Switch / 8.1：

Traveling Wave Marx Generator / 8.2：

Traveling Marx Wave in a Layered Dielectric / 8.3：

Pulse Transformation and Generation Using Non-Uniform Transmission Lines

Use of Cell Chain to Simulate Pulse Transformer / 8.4：

Pulse Transformer Simulation Results / 8.5：

Pulse Source Using Non-Uniform TLM Lines (Switch at Output) / 8.6：

Radial Pulse Source (Switch at Output) / 8.7：

Pulse Sources with Gain (PFXL Sources) / 8.8：

Darlington Pulser

TLM Formulation of Darlington Pulser / 8.9：

SPICE Simulation of Lossy Darlington Pulser / 8.10：

Introduction To SPICE Format / 8A.1：

Discussion of Format for Photoconductive Switch / 8A.2：

TLM Analysis of Leading Edge Pulse in a Transformer / 8A.3：

TLM Analysis of Leading Edge Wave in PFXL / 8A.4：

Biography of Maurice Weiner

Index

Preface

Introduction to Transmission Lines and Their Application to Electromagnetic Phenomena / 1：

Simple Experimental Example / 1.1：

Examples of Impulse Sources / 1.2：

Model Outline / 1.3：

Application of Model to Small Node Resistance / 1.4：

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