| Preface |
| Materials Research Society Symposium Proceedings |
| SiC Devices and Processing / Part I： |
| SiC Power Electronic Devices, MOSFETs and Rectifiers / J.A. Cooper ; S-H. Ryu ; Y. Li ; M. Matin ; J. Spitz ; D.T. Morisette ; H.M. McGlothlin ; M.K. Das ; M.R. Melloch ; M.A. Capano ; J.M. Woodall |
| Recent Progress in SiC Microwave MESFETs / S.T. Allen ; S.T. Sheppard ; W.L. Pribble ; R.A. Sadler ; T.S. Alcorn ; Z. Ring ; J.W. Palmour |
| Current Status of SiC Power Switching Devices: Diodes and GTOs / S. Seshadri ; A.K. Agarwal ; W.B. Hall ; S.S. Mani ; M.F. MacMillan ; R. Rodrigues ; T. Hanson ; S. Khatri ; P.A. Sanger |
| The Effects of Damage on Hydrogen-Implant-Induced Thin-Film Separation From Bulk Silicon Carbide / R.B. Gregory ; O.W. Holland ; D.K. Thomas ; T.A. Wetteroth ; S.R. Wilson |
| Characterization of SiO[subscript 2]/SiC Samples Using Photoelectron Spectroscopy / L.I. Johansson ; P-A. Glans ; Q. Wahab ; T.M. Grehk ; Th. Eickhoff ; W. Drube |
| Annealing of Ion Implantation Damage in SiC Using a Graphite Mask / C. Thomas ; C. Taylor ; J. Griffin ; W.L. Rose ; M.G. Spencer ; M. Capano ; S. Rendakova ; K. Kornegay |
| Effect of Varying Oxidation Parameters on the Generation of C-Dangling Bond Centers in Oxidized SiC / P.J. Macfarlane ; M.E. Zvanut |
| Thick Oxide Layers on N and P SiC Wafers by a Depo-Conversion Technique / Q. Zhang ; V. Madangarli ; I. Khlebnikov ; S. Soloviev ; T.S. Sudarshan |
| Bias-Temperature-Stress Induced Mobility Improvement in 4H-SiC MOSFETs / K. Chatty ; T.P. Chow ; R.J. Gutmann ; E. Amold ; D. Alok |
| Full Band Monte Carlo Simulation of Short Channel MOSFETs in 4H and 6H-SiC / M. Hjelm ; H-E. Nilsson ; E. Dubaric ; C. Persson ; P. Kackell ; C.S. Petersson |
| High Voltage Schottky Barrier Diodes on p-Type SiC Using Metal-Overlap on a Thick Oxide Layer as Edge Termination |
| High Voltage P-N Junction Diodes in Silicon Carbide Using Field Plate Edge Termination / R.K. Chilukuri ; P. Ananthanarayanan ; V. Nagapudi ; B.J. Baliga |
| Carbon and Silicon Related Surface Compounds of Palladium Ultrathin Films on SiC After Different Annealing Temperatures / W.J. Lu ; D.T. Shi ; T. Crenshaw ; A. Burger ; W.E. Collins |
| A Materials Investigation of Nickel Based Contacts to n-SiC Subjected to Operational Thermal Stresses Characteristic of High Power Switching / M.W. Cole ; C.W. Hubbard ; C.G. Fountzoulas ; D.J. Demaree ; F. Ren |
| Preparation of Conductive Tungsten Carbide Layers for SiC High-Temperature Applications / H. Romanus ; V. Cimalla ; S.I. Ahmed ; J.A. Schaefer ; G. Ecke ; R. Avci ; L. Spiess |
| A Formation of SiO[subscript 2]/4H-SiC Interface by Oxidizing Deposited Poly-Si and High-Temperature Hydrogen Annealing / H. Fukuda ; K. Sakamoto ; K. Nagai ; T. Sekigawa ; S. Yoshida ; K. Arai |
| High-Temperature Stable WSi[subscript 2]-Contacts on p-6H-Silicon Carbide / F. Erler ; J.K.N. Lindner |
| Structural and Electrical Properties of Beryllium Implanted Silicon Carbide / T. Henkel ; Y. Tanaka ; N. Kobayashi ; H. Tanoue ; M. Gong ; X.D. Chen ; S. Fung ; C.D. Beling |
| Elevated Temperature Silicon Carbide Chemical Sensors / M.A. George ; M.A. Ayoub ; D. Ila ; D.J. Larkin |
| The Effect of Annealing on Argon Implanted Edge Terminations for 4H-SiC Schottky Diodes / A.P. Knights ; D.J. Morrison ; N.G. Wright ; C.M. Johnson ; A.G. O'Neill ; S. Ortolland ; K.P. Homewood ; M.A. Lourenco ; R.M. Gwilliam ; P.G. Coleman |
| Oxidation Modeling for SiC |
| Annealing Effects of Schottky Contacts on the Characteristics of 4H-SiC Schottky Barrier Diodes / S.C. Kang ; B.H. Kum ; S.J. Do ; J.H. Je ; M.W. Shin |
| SiC Epitaxy and Characterization / Part II： |
| Epitaxial Growth of SiC in a Vertical Multi-Wafer CVD System: Already Suited as Production Process? / R. Rupp ; C. Hecht ; A. Wiedenhofer ; D. Stephani |
| Multi-Wafer VPE Growth of Highly Uniform SiC Epitaxial Layers / M.J. O'Loughlin ; H.D. Nordby, Jr. ; A.A. Burk, Jr. |
| Characterization of Thick 4H-SiC Hot-Wall CVD Layers / M.J. Paisley ; K.G. Irvine ; O. Kordina ; R. Singh ; C.H. Carter, Jr. |
| Homo-Epitaxial and Selective Area Growth of 4H and 6H Silicon Carbide Using a Resistively Heated Vertical Reactor / E. Eshun ; I. Ferguson ; A. Gurray ; R. Stall |
| Properties of 4H-SiC by Sublimation Close Space Technique / S. Nishino ; K. Matsumoto ; Y. Chen ; Y. Nishio |
| Effect of Ge on SiC Film Morphology in SiC/Si Films Grown by MOCVD / W.L. Sarney ; L. Salamanca-Riba ; P. Zhou ; R.P. Sharma ; K.A. Jones |
| Properties of Heteroepitaxial 3C-SiC Layer on Si Using Si[subscript 2](CH[subscript 3])[subscript 6] by CVD / Y. Masuda |
| Characterization of p-Type Buffer Layers for SiC Microwave Device Applications / A.O. Konstantinov ; S. Karlsson ; P-A. Nilsson ; A-M. Saroukhan ; J-O. Svedberg ; N. Nordell ; C.I. Harris ; J. Eriksson ; N. Rorsman |
| Optical Characterization of SiC Wafers / J.C. Burton ; M. Pophristic ; F.H. Long |
| Growth of SiC Thin Films on (100) and (111) Silicon by Pulsed Laser Deposition Combined With a Vacuum Annealing Process / J. Huang ; L. Wang ; J. Wen ; Y. Wang ; C. Lin ; C-M. Zetterling ; M. Ostling |
| On the Role of Foreign Atoms in the Optimization of 3C-SiC/Si Heterointerfaces / P. Masri ; N. Moreaud ; M. Averous ; Th. Stauden ; T. Wohner ; J. Pezoldt |
| 3C-SiC Buffer Layers Converted From Si at a Low Temperature / H.M. Liaw ; S.Q. Hong ; P. Fejes ; D. Werho ; H. Tompkins ; S. Zollner ; K.J. Linthicum ; R.F. Davis |
| Time Resolved Photoluminescence of Cubic Mg Doped GaN / R. Seitz ; C. Gaspar ; T. Monteiro ; E. Pereira ; B. Schoettker ; T. Frey ; D.J. As ; D. Schikora ; K. Lischka |
| Dielectric Function of AIN Grown on Si (111) by MBE / A. Konkar ; S.A. Nikishin ; H. Temkin |
| The Comparative Studies of Chemical Vapor Deposition Grown Epitaxial Layers and of Sublimation Sandwich Method Grown 4H-SiC Samples / A.O. Evwaraye ; S.R. Smith ; W.C. Mitchel |
| SiC Bulk Growth and Characterization / Part III： |
| Impurity Effects in the Growth of 4H-SiC Crystals by Physical Vapor Transport / V. Balakrishna ; G. Augustine ; R.H. Hopkins |
| Characterization of Vanadium-Doped 4H-SiC Using Optical Admittance Spectroscopy / J.S. Solomon ; J. Goldstein |
| On-Line Monitoring of PVT SiC Bulk Crystal Growth Using Digital X-ray Imaging / P.J. Wellmann ; M. Bickermann ; M. Grau ; D. Hofmann ; T.L. Straubinger ; A. Winnacker |
| Polytype Stability and Defect Reduction in 4H-SiC Crystals Grown Via Sublimation Technique / R. Yakimova ; T. Iakimov ; M. Syvajarvi ; H. Jacobsson ; P. Raback ; A. Vehanen ; E. Janzen |
| Growth and Characterization of 2" 6H-Silicon Carbide / E. Schmitt ; R. Eckstein ; M. Kolbl |
| Experimental and Theoretical Analysis of the Hall-Mobility in n-Type Bulk 6H- and 4H-SiC / St. G. Muller |
| Mid-Infrared Photoconductivity Spectra of Donor Impurities in Hexagonal Silicon Carbide / R.J. Linville ; G.J. Brown ; A. Saxler ; R. Perrin |
| GaN Growth and Characterization / Part IV： |
| The Influence of the Sapphire Substrate on the Temperature Dependence of the GaN Bandgap / J. Kruger ; N. Shapiro ; S. Subramanya ; Y. Kim ; H. Siegle ; P. Perlin ; E.R. Weber ; W.S. Wong ; T. Sands ; N.W. Cheung ; R.J. Molnar |
| Effect of N/Ga Flux Ratio in GaN Buffer Layer Growth by MBE on (0001) Sapphire on Defect Formation in the GaN Main Layer / S. Ruvimov ; Z. Liliental-Weber ; J. Washburn ; G.S. Sudhir ; J. Krueger |
| Enhanced Optical Emission From GaN Film Grown on Composite Intermediate Layers / X. Zhang ; S-J. Chua ; P. Li ; K-B. Chong |
| Pendeo-Epitaxial Growth of GaN on SiC and Silicon Substrates Via Metalorganic Chemical Vapor Deposition / T. Gehrke ; D. Thomson ; C. Ronning ; E.P. Carlson ; C.A. Zorman ; M. Mehregany |
| Maskless Lateral Epitaxial Overgrowth of GaN on Sapphire / P. Fini ; H. Marchand ; J.P. Ibbetson ; B. Moran ; L. Zhao ; S.P. DenBaars ; J.S. Speck ; U.K. Mishra |
| Reproducibility and Uniformity of MOVPE Planetary Reactors for the Growth of GaN Based Materials / M. Heuken ; H. Protzmann ; O. Schoen ; M. Luenenbuerger ; H. Juergensen ; M. Bremser ; E. Woelk |
| Synchrotron X-ray Topography Studies of Epitaxial Lateral Overgrowth of GaN on Sapphire / P.J. McNally ; T. Tuomi ; R. Rantamaki ; K. Jacobs ; L. Considine ; M. O'Hare ; D. Lowney ; A.N. Danilewsky |
| Conducting (Si-Doped) Aluminum Nitride Epitaxial Films Grown by Molecular Beam Epitaxy / J.G. Kim ; M. Moorthy ; R.M. Park |
| Investigation of the Morphology of AIN Films Grown on Sapphire by MOCVD Using Transmission Electron Microscopy / S. Wilson |
| Temperature Dependent Morphology Transition of GaN Films / A.R.A. Zauner ; F.K. De Theije ; P.R. Hageman ; W.J.P. Van Enckevort ; J.J. Schermer ; P.K. Larsen |
| Comparative Study of Emission From Highly Excited (In, Al) GaN Thin Films and Heterostructures / B.D. Little ; S. Bidnyk ; T.J. Schmidt ; J.B. Lam ; Y.H. Kwon ; J.J. Song ; S. Keller ; W. Yang |
| Atomic Scale Analysis of InGaN Multi-Quantum Wells / M. Benamara ; W. Swider ; R.D. Dupuis ; P.A. Grudowski ; C.J. Eiting ; J.W. Yang ; M.A. Khan |
| TEM Study of Mg-Doped Bulk GaN Crystals / J.H. Mazur ; I. Grzegory ; S. Porowski |
| Deformation-Induced Dislocations in 4H-SiC and GaN / M.H. Hong ; A.V. Samant ; V. Orlov ; B. Farber ; C. Kisielowski ; P. Pirouz |
| Ca Dopant Site Within Ion Implanted GaN Lattice / H. Kobayashi ; W.M. Gibson |
| Growth and Characterization of InGaN/GaN Heterostructures Using Plasma-Assisted Molecular Beam Epitaxy / K.H. Shim ; S.E. Hong ; K.H. Kim ; M.C. Paek ; K.I. Cho |
| Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride / C.M. Lueng ; H.L.W. Chan ; W.K. Fong ; C. Surya ; C.L. Choy |
| Fast and Slow UV-Photoresponse in n-Type GaN / R. Rocha ; S. Koynov ; P. Brogueira ; R. Schwarz ; V. Chu ; M. Topf ; D. Meister ; B.K. Meyer |
| Epitaxial Growth of GaN Thin Films Using a Hybrid Pulsed Laser Deposition System / P. Merel ; M. Chaker ; H. Pepin ; M. Tabbal |
| Epitaxial Growth of AIN on Si Substrates With Intermediate 3C-SiC as Buffer Layers / K. Linthicum ; M. Kottke |
| SIMS and CL Characterization of Manganese-Doped Aluminum Nitride Films / R.C. Tucceri ; C.D. Bland ; M.L. Caldwell ; M.H. Ervin ; N.P. Magtoto ; C.M. Spalding ; M.A. Wood ; H.H. Richardson |
| Photoluminescence Between 3.36 eV and 3.41 eV From GaN Epitaxial Layers / M.A. Poisson ; B. Beaumont |
| Disorder Induced IR Anomaly in Hexagonal AlGaN Short-Period Superlattices and Alloys / A.M. Mintairov ; A.S. Vlasov ; J.L. Merz ; D. Korakakis ; T.D. Moustakas ; A.O. Osinsky ; R. Gaska ; M.B. Smirnov |
| Nondegenerate Optical Pump-Probe Spectroscopy of Highly Excited Group III Nitrides |
| Study of Near-Threshold Gain Mechanisms in MOCVD-Grown GaN Epilayers and InGaN/GaN Heterostructures |
| Electron Transport in the III-V Nitride Alloys / B.E. Foutz ; S.K. O'Leary ; M.S. Shur ; L.F. Eastman |
| High-Quality GaN Grown by Molecular Beam Epitaxy on Ge(001) / J.W. Ager III |
| Carrier Recombination Dynamics of Al[subscript x]Ga[subscript 1-x]N Epilayers Grown by MOCVD / Y-H. Cho ; G.H. Gainer ; S.A. McPherson |
| Comparative Study of GaN Growth Process by MOVPE / J. Sun ; J.M. Redwing ; T.F. Kuech |
| GaN Devices and Processing / Part V： |
| AlGaN Microwave Power HFETs on Insulating SiC Substrates / G. Sullivan ; E. Gertner ; R. Pittman ; M. Chen ; R. Pierson ; A. Higgins ; Q. Chen ; J-W. Yang ; R.P. Smith ; R. Perez ; A. Khan ; J. Redwing ; B. McDermott ; K. Boutros |
| Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process / W.S. Lee ; Y.H. Choi ; K.W. Chung ; D.C. Moon |
| Current-Voltage Characteristics of Ungated AlGaN/GaN Heterostructures / J.D. Albrecht ; P.P. Ruden ; S.C. Binari ; K. Ikossi-Anastasiou ; M.G. Ancona ; R.L. Henry ; D.D. Koleske ; A.E. Wickenden |
| Hydrostatic and Uniaxial Stress Dependence and Photo-Induced Effects on the Channel Conductance of n-AlGaN/GaN Heterostructures Grown on Sapphire Substrates / A.K. Fung ; C. Cai ; M.I. Nathan ; M.Y. Chen ; B.T. McDermott ; G.J. Sullivan ; J.M. Van Hove ; W. Schaff ; M. Murphy |
| The Influence of Spontaneous and Piezoelectric Polarization on Novel AlGaN/GaN/InGaN Device Structures / M.J. Murphy ; O. Ambacher ; V. Tilak ; J.A. Smart ; J.R. Shealy ; W.J. Schaff |
| Piezoelectric Scattering in Large-Bandgap Semiconductors and Low-Dimensional Heterostructures / B.K. Ridley ; N.A. Zakhleniuk ; C.R. Bennett ; M. Babiker ; D.R. Anderson |
| Activation Characteristics of Donor and Acceptor Implants in GaN / X.A. Cao ; S.J. Pearton ; R.K. Singh ; R.G. Wilson ; J.A. Sekhar ; J.C. Zolper ; J. Han ; D.J. Rieger ; R.J. Shul ; H.J. Guo ; S.J. Pennycook ; J.M. Zavada |
| Transmutation Doping of III-Nitrides / G. Popovici |
| High Barrier Height n-GaN Schottky Diodes With a Barrier Height of 1.3 eV by Using Sputtered Copper Metal / W.C. Lai ; M. Yokoyama ; C.Y. Chang ; J.D. Guo ; J.S. Tsang ; S.H. Chan ; S.M. Sze |
| IIIB-Nitride Semiconductors for High-Temperature Electronic Applications / X. Bai ; D.M. Hill ; M.E. Kordesch |
| Photo-Assisted RIE of GaN in BCI[subscript 3]/Cl[subscript 2]/N[subscript 2] / N. Medelci ; A. Tempez ; I. Berishev ; D. Starikov ; A. Bensaoula |
| Correlation of Drain Current Pulsed Response With Microwave Power Output in AlGaN/GaN HEMTs / W. Kruppa ; H.B. Dietrich ; G. Kelner |
| Photoionization Spectra of Traps Responsible for Current Collapse in GaN MESFETs / P.B. Klein ; J.A. Freitas, Jr |
| Author Index |
| Subject Index |
| Preface |
| Materials Research Society Symposium Proceedings |
| SiC Devices and Processing / Part I： |
| SiC Power Electronic Devices, MOSFETs and Rectifiers / J.A. Cooper ; S-H. Ryu ; Y. Li ; M. Matin ; J. Spitz ; D.T. Morisette ; H.M. McGlothlin ; M.K. Das ; M.R. Melloch ; M.A. Capano ; J.M. Woodall |
| Recent Progress in SiC Microwave MESFETs / S.T. Allen ; S.T. Sheppard ; W.L. Pribble ; R.A. Sadler ; T.S. Alcorn ; Z. Ring ; J.W. Palmour |
| Current Status of SiC Power Switching Devices: Diodes and GTOs / S. Seshadri ; A.K. Agarwal ; W.B. Hall ; S.S. Mani ; M.F. MacMillan ; R. Rodrigues ; T. Hanson ; S. Khatri ; P.A. Sanger |
Book
Semiconductor quantum dots : symposium held April 5-8, 1999, San Francisco, California, U.S.A.