| Preface |
| High Purity Silicon Fabrication Techniques |
| Advanced Silicon Wafers for 0.18 [mu]m Design Rule and Beyond: Epi and fFLASH! / R. Schmolke ; M. Blietz ; R. Schauer ; D. Zemke ; H. Oelkrug ; W. v. Ammon ; U. Lambert ; D. Graf |
| The Time Dependence of Point Defect Behavior near the Growth Interface in Cz-Si / B.M. Park ; I.S. Choi |
| Effect of Shape of Crystal-Melt Interface on Point Defect Reaction in Silicon Crystals / K. Nakamura ; S. Maeda ; S. Togawa ; T. Saishoji ; J. Tomioka |
| High Pull Speed for Fast Pulled Crystal in Cz Growth / H.J. Oh ; J.H. Wang ; K.-M. Kim ; H.-D. Yoo |
| Micro-Fluctuation of Growth-Rate and Grown-in Defect Distribution in Cz-Si / M. Hasabe ; J. Fukuda ; T. Iwasaki ; H. Harada ; M. Tanaka |
| Direct Proof of Argon Atoms Incorporated Into High-Purity Silicon Single Crystals During Growth in Argon Gas Ambient / A.G. Ulyashin ; R. Job ; W.R. Fahrner ; A.V. Mudryi ; A.I. Patuk ; I.A. Shakin |
| Nucleation of Void Defects in Cz Silicon / Y. Yamanaka ; K. Tanahashi ; T. Mikayama ; N. Inoue ; A. Mori |
| The Formation Mechanism of Coupled Voids in Czochralski Silicon / F. Ishikawa ; S. Sadohara |
| Valence Force Field Analysis of Nitrogen in Silicon / A. Koukitsu |
| Intrinsic and Inpurity Related Defects |
| Silicon Float Zone Crystal Growth as a Tool for the Study of Defects and Impurities / T.F. Ciszek ; T.H. Wang |
| Transient Simulation of Grown-in Defect Dynamics in Czochralski Crystal Growth of Silicon / T. Mori ; Z. Wang ; R.A. Brown |
| Detection of Oxygen-Related Defects in Silicon Wafers by Highly Selective Reactive Ion Etching / K. Nakashima ; Y. Watanabe ; T. Yoshida ; Y. Mitsushima |
| Misfit Dislocation Nucleation Study in P/P[superscript +] Si / P. Feichtinger ; M.S. Goorsky ; D. Oster ; T. D'Silva ; J. Moreland |
| Screening of Dislocations in Silicon by Point Defects / I.V. Peidous ; K.V. Loiko |
| Vacancy-Nitrogen Complexes in Float-Zone Silicon / F. Quast ; P. Pichler ; H. Ryssel ; R. Falster |
| Oxygen Precipitation Behavior and its Optimum Condition for Internal Gettering and Mechanical Strength in Epitaxial and Polished Silicon Wafers / K. Sueoka ; M. Akatsuka ; T. Onno ; E. Asayama ; Y. Koike ; N. Adachi ; S. Sadamitsu ; H. Katahama |
| Threshold Stresses of Dislocation Generation Onset in Silicon / N. Balasubramanian ; T. Schuelke |
| Aggressive Monitoring of OSFs Using High Temperature Oxidation / K.-M. Bae ; J.-R. Kim ; D.-M. Lee ; S.-S. Kim ; C.-G. Koh ; S.-H. Pyi |
| Formation and Annihilation of Epitaxial Stacking Faults Generated from Pre-Existing Nucleation Sites in Silicon / C.R. Cho ; K.Y. Noh ; D.H. Lee ; Y.S. Kim ; S.W. Ko ; C.W. Kim ; D.H. Kim ; C.B. Son ; S.J. Kim ; D.H. Cho ; J.J. Choi ; D.J. Kim ; K.M. Bae ; G.A. Rozgonyi |
| Bulk and Surface Properties of Cz Silicon After Hydrogen Plasma Treatments / V.P. Markevich ; L.I. Murin ; J.L. Lindstrom ; V. Raiko ; J. Engemann |
| Metallic Impurities in Silicon |
| Tin Doping Effects in Silicon / E. Simoen ; C. Claeys ; V.B. Neimash ; A. Kraitchinskii ; M. Kras'ko ; O. Puzenko ; A. Blondeel ; P. Clauws |
| In-Situ Measurement of Iron in P-type Silicon with the [mu]W-PCD Technique / M. Porrini ; P. Tessariol |
| Radial Distributions of Transition Metal Defects in Float Zone Silicon Crystals / H. Lemke ; W. Zulehner ; B. Hallmann |
| Progress in Understanding the Physics of Copper in Silicon / A.A. Istratov ; C. Flink ; S. Baluasubramanian ; E.R. Weber ; H. Hieslmair ; S.A. McHugo ; H. Hedemann ; M. Seibt ; W. Schroter |
| Effect of Cobalt and Copper Contamination on the Electrical Properties of Processed Silicon / J. Benton ; T. Boone ; D. Jacobson ; P. Silverman ; C. Rafferty ; S. Weinzierl ; B. Vu |
| Copper Stable Isotope Spike Method as A Tool for Low Temperature Out-Diffusion of Copper in P-Type Silicon / B.-J. Maeng ; H.-S. Oh ; Y.-K. Hong |
| Effect of Aluminum on Oxide Growth and Oxide Charges in Silicon Wafers / H. Shimizu ; M. Ikeda ; C. Munakata ; N. Nagashima |
| Gettering Studies |
| Impact of Annealing Temperature and Cooling Rate on the Gettering of Fe by Polysilicon Backside / M.B. Shabani ; Y. Shiina ; Y. Shimanuki |
| 300 mm Epi PP Wafer: Is There Sufficient Gettering? / D. Graff ; R. Wahlich ; W. Siebert ; E. Daub ; W.v. Ammon |
| Influence of LSTD Size on the Formation of Denuded Zone in Hydrogen Annealed Cz Silicon Wafers / R. Takeda ; T. Minami ; H. Saito ; Y. Hirano ; H. Fujimori ; K. Kashima ; Y. Matsushita |
| Integrated Gettering of Metallic Contaminants by Nanocavities in FZ Silicon Wafers / I. Perichaud ; E. Yakimov ; S. Martinuzzi |
| On the Effect of the Precipitation on DRAM Device Yield / R. Winkler |
| Intrinsic Gettering in Nitrogen Doped Czochralski Crystal Silicon / D. Yang ; R. Fan ; Y. Shen ; D. Tian ; L. Li ; D. Que |
| Device Performance |
| Trends in Lifetime Measurements / D.K. Schroder |
| Epitaxial Layer Lifetime Characterization in the Frequency Domain / J.E. Park ; S.E. Tan ; B.D. Choi ; M. Fletcher ; A. Buczkowski ; F. Kirscht |
| Minority Carrier Lifetime and Impurity Level Scan Map in Silicon / O. Palais ; J.J. Simon |
| Lifetime and Leakage Current Studies in Shallow P-N Junctions Fabricated in a Deep High-Energy Boron Implanted P-Well / A. Poyai ; R. Rooyackers ; G. Badenes ; E. Gaubas |
| Carrier Lifetime Control and Characterization of High-Resistivity Silicon Used for High-Power Devices / H.-J. Schulze ; A. Frohnmeyer ; F.-J. Niedernostheide ; F. Hille ; P. Tutto ; T. Pavelka ; G. Wachutka |
| Two Dimensional Leakage Current Distribution of Ultrathin Oxide on Stepped Si Surface / M. Murata ; N. Tokuda ; D. Hojo ; K. Yamabe |
| The Gate oxide Quality of Annealed Cz Silicon Wafers and Its Influence on 4M DRAM Device Yield and Reliability |
| Investigation of GOI Test Methods on Silicon Surface Defect Failure Mechanisms / F. Gonzalez ; M. Hider ; R. Barbourm ; J. Hull ; S. Kitagawa |
| Gate oxide Integrity Response as a Function of Near the Surface Crystal Defects Morphology / G. Borionetti ; P. Godio ; F. Bonoli ; M. Cornara ; R. Orizio |
| Impacting Device Performance and Yield Through Sacrificial Oxidation Improvements / S. Ambadi ; D. Hannoun ; K. Kamekona ; J. Pearse ; G. Chang |
| On the Influence of the Interstitial Oxygen on DRAM Device Yield and Reliability |
| A Process Simulation Model for the Effects Due to Nitridation of Oxides / Y.-S. Oh ; D.E. Ward |
| Device Applications |
| High Resistivity Cz Silicon for RF Applications Substituting GaAs* / T. Abe ; W. Qu |
| Surface and Bulk Properties of Oxygenated FZ Silicon Wafers for Particle Detector Applications / P. Bellutti ; M. Boscardin ; G.-F. Dalla Betta ; L. Ferrario ; P. Gregori ; N. Zorzi |
| Intrinsic Defects in FZ Silicon and Their Impact on X-Ray PIN Sensor Parameters / H. Rieman ; A. Ludge ; K. Schwerd |
| SOI Wafer Fabrication by Atomic Layer Cleaving / M.I. Current ; I.J. Malik ; S.W. Bedell ; S.N. Farrens ; H. Kirk ; M. Korolik ; S. Kang ; M. Fuerfanger ; F.J. Henley |
| Effect of Material Properties on Stress-Induced Defect Generation in Trench SOI / W.A. Nevin ; K. Somasundram ; S. Blackstone ; S. Magee ; A.T. Paxton |
| A New Substrate Engineering Technique to Realize Silicon on Nothing (SON) Structure Utilizing Transformation of Sub-micron Trenches to Empty Space in Silicon (ESS) by Surface Migration / Y. Tsunashima ; T. Sato ; I. Mizushima |
| Novel and Improved Characterization Techniques |
| Silicon Defect characterization by High Resolution Laplace Deep Level Transient Spectroscopy* / A.R. Peaker ; L. Dobaczewski ; O. Andersen ; L. Rubaldo ; I.D. Hawkins ; K. Bonde Nielsen ; J.H. Evans-Freeman |
| Surface-Separated Collection of Ionic Species for Ion-Chromatography Analysis on Silicon Wafers / K. Yanagi ; H. Shibata ; K. Nagai ; M. Watanabe |
| Photomagnetic Detection of Doping Inhomogeneities in Silicon Crystals Using SQUID Magnetometers / H. Riemann ; J. Beyer ; Th. Schurig |
| The Measurement of Nitrogen in Silicon Substrates by SIMS / R.S. Hockett ; D.B. Sams |
| Laser Spectroscopy Methods for Nondestructive Analysis of Polycrystalline Silicon Thin Films and Silicon Surfaces / D. Milovzorov ; N. Chigarev |
| Impact of the Purity of Silicon on the Evolution of Ion Beam Generated Defects: From Research to Technology* / V. Privitera |
| Microscopic Characterization of Electrochemical Properties of Silicon Wafer Surfaces* / T. Homma ; J. Tsukano ; T. Osaka |
| Use of Diode Diagnostics for Silicon Wafer Quality Characterization: Effect of COP on PN Junction Leakage* / H. Kubota ; H. Nagano ; J. Sugamoto ; H. Matsushita ; M. Momose ; S. Nitta ; S. Samata ; N. Tsuchiya |
| Crystal Defect Information Obtained by Multiple Wafer Recleaning / L. Mule'Stagno ; S. Keltner ; R. Yalamanchili ; M. Kulkarni ; J. Libbert ; M. Banan |
| Resonance Ultrasonic Diagnostics of As-Grown and Process-Induced Defects in Cz Silicon / A. Belyaev ; I. Tarasov ; S. Ostapenko ; S. Koveshnikov ; V.A. Kochelap ; A.E. Beyaev |
| Deposition Mechanism of Trace Metals on Silicon Wafer Surfaces in Ultra Pure Water |
| A Study of "twin" [100] Square Hillock Silicon Crystalline Defects on Silicon Substrate in Wafer Fabrication Using 155 Wright Etch / H. Younan |
| Authors Index |
| Subject Index |
| Preface |
| High Purity Silicon Fabrication Techniques |
| Advanced Silicon Wafers for 0.18 [mu]m Design Rule and Beyond: Epi and fFLASH! / R. Schmolke ; M. Blietz ; R. Schauer ; D. Zemke ; H. Oelkrug ; W. v. Ammon ; U. Lambert ; D. Graf |
| The Time Dependence of Point Defect Behavior near the Growth Interface in Cz-Si / B.M. Park ; I.S. Choi |
| Effect of Shape of Crystal-Melt Interface on Point Defect Reaction in Silicon Crystals / K. Nakamura ; S. Maeda ; S. Togawa ; T. Saishoji ; J. Tomioka |
| High Pull Speed for Fast Pulled Crystal in Cz Growth / H.J. Oh ; J.H. Wang ; K.-M. Kim ; H.-D. Yoo |
