| Preface |
| Interface Characterization / I.： |
| Electrical Characterization Techniques for Semiconductor-Silicon Dioxide Interface - A Review / M.J. Deen |
| Si-SiO[subscript 2] Interface Trap Properties and Dependence with Oxide Thickness and with Electrical Stress in MOSFET's with Oxides in the 1-2 nm Range / D. Bauza ; F. Rahmoune |
| EPR Studies of SiC/SiO[subscript 2] Interfaces in n-type 4H-and 6H- Oxidized Porous SIC / H.J. von Bardeleben ; J.L. Cantin ; M. Mynbaeva ; S.E. Saddow ; Y. Shishkin ; R.P. Devaty ; W.J. Choyke |
| Related Oxides / II.： |
| Novel Germanium Technology and Devices for High Performance MOSFETs and Integrated On-Chip Optical Clocking / K.C. Saraswat ; C.O. Chui ; P.C. McIntyre ; B.B. Triplett |
| Properties of Ultrathin High-k Dielectrics on Si Probed by Electron Spin Resonance-Active Defects: Interfaces and Interlayers / A. Stesmans ; V.V. Afanas'ev |
| Role of Ultra Thin Silicon Oxide Interfacial Layer in High Performance High Dielectric Constant Gate Dielectrics / R. Singh ; M. Fakhruddin ; K.F. Poole ; S.V. Kondapi ; A. Gupta ; J. Narayan ; S. Kar |
| Quantum Mechanical Modeling of Capacitance-Voltage and Current-Voltage Behavior for SiO[subscript 2] and High-k Dielectrics / L.F. Register ; Y.-Y. Fan ; S.P. Mudanai ; S.K. Banerjee |
| Thermally Driven Atomic Transport in Silicon Oxynitride and High-k Films on Silicon / I.J.R. Baumvol ; F.C. Stedile ; J. Morais ; C. Krug ; C. Radtke ; E.B.O da Rosa ; K.P. Bastos ; R.P. Pezzi ; L. Miotti ; G.V. Soares |
| Investigations of the Structure and Stability of Alternative Gate Dielectrics / S. Stemmer ; Z.Q. Chen ; P.S. Lysaght ; J.A. Gisby ; J.R. Taylor |
| Comparison of Contamination Effects in Silicon Oxide with that in Hafnium Oxide and Zirconium Oxide Gate Dielectrics / F. Shadman ; P. Raghu ; N. Rana ; C. Yim ; E. Shero |
| Characteristics of Metal Gate MOS Capacitor with Hafnium Oxynitride Thin Film / K.-J. Choi ; S.-G. Yoon |
| Charge Trapping in High-Dose Ge-Implanted and Si-Implanted Silicon-Dioxide Thin Films / A.N. Nazarov ; I.N. Osiyuk ; I.P. Tyagulskii ; V.S. Lysenko ; T. Gebel ; W. Skorupa |
| Film Application / Device Characterization / Reliability / III.： |
| What Can Low-frequency Noise Learn us About the Quality of Thin-gate Dielectrics? / E. Simoen ; A. Mercha ; C. Claeys |
| Analysis of Short-channel MOSFET Behavior after Gate Oxide Breakdown and its Impact on Digital Circuit Reliability / G. Groeseneken ; B. Kaczer ; R. Degraeve |
| Cyanide Treatment to Improve Electrical Characteristics of Si-based MOS Diodes with an Ultrathin Oxide Layer / H. Kobayashi ; T. Kobayashi ; A. Asano ; O. Maida ; M. Takahashi |
| Process Dependence of Negative Bias Temperature Instability in PMOSFETS / S. Prasad ; E. Li ; L. Duong |
| Silicon Dioxide Insulating Films for Silicon-Germanium Technology / A. Vijh ; V.J. Kapoor ; R.L. Patterson ; J.E. Dickman |
| New Reliability Issues of CMOS Transistors with 1.3nm Thick Gate Oxide / M.F. Li ; B.J. Cho ; G. Chen ; W.Y. Loh ; D.L. Kwong |
| Improved Performance With Low Temperature Silicon Nitride Spacer Process / C.M. Reddy ; S.G.H. Anderson |
| Interface Studies / Defects / IV.： |
| Growth of SiO[subscript 2] at the Sc[subscript 2]O[subscript 3]/Si(100) Interface During Annealing / G.A. Botton ; E. Romain ; D. Landheer ; X. Wu ; M.-Y. Wu ; M. Lee ; Z.-H. Lu |
| A Review of Defect Generation in the SiO[subscript 2] and at Its Interface with Si / J.F. Zhang |
| Dipoles in SiO[subscript 2]: Border Traps or Not? / D.M. Fleetwood ; S.N. Rashkeev ; Z.Y. Lu ; C.J. Nicklaw ; J.A. Felix ; R.D. Schrimpf ; S.T. Pantelides |
| Stabilities and Electronic States of Incorporated Nitrogen Atoms at the Interface of SiO[subscript 2]/Si(001) / T. Yamasaki ; C. Kaneta |
| Electrical Properties and the Reliability of Silicon Nitride Gate Dielectrics Formed by Various Processes and Annealing Treatments / K.-S. Chang-Liao ; J.Y Pan ; C.L. Cheng ; T.K. Wang |
| Electronically Active Defects in Utra-thin Oxynitride Gate Dielectrics / D.A. Buchanan |
| Nitrogen Content and Interface Trap Reduction in SiO[subscript 2]/4H-SiC / K. McDonald ; R.A. Weller ; L.C. Feldman ; G.Y Chung ; C.C. Tin ; J.R. Williams |
| Cathodoluminescence of Thin Films of Silicon Oxide on Silicon / M.V. Zamoryanskaya ; V.I. Sokolov ; I.M. Kotina ; C.G. Konnikov |
| Predictive Simulation of Void Formation during the Deposition of Silicon Nitride and Silicon Dioxide Films / C. Heitzinger ; A. Sheikholeslami ; H. Puchner ; S. Selberherr |
| Film Preparation and Characterization I / V.： |
| Direct-Write Deposition of Silicon Oxide - The Express Lane towards patterned thin Films / H.D. Wanzenboeck ; S. Harasek ; E. Bertagnolli ; M. Gritsch ; H. Hutter ; J. Brenner ; H. Stoeri ; U. Grabner ; G. Hammer ; P. Pongratz |
| Comprehensive Optical and Compositional Characterization of Silicon-based Thin Films for Photonics / J. Wojcik ; E.A. Irving ; J.A. Davies ; W.N. Lennard ; P. Mascher |
| Hydrogenated Amorphous Silicon Nitride Deposited by Dc Magnetron Sputtering / K. Mokeddem ; M. Sayhi ; M. Aoucher ; A.C. Chami ; M. Abdessalem |
| Properties of Annealed Silicon Oxynitride Layers for Optical Applications / K. Worhoff ; G.M. Hussein ; C.G.H. Roeloffzen ; L.T.H. Hilderink |
| Optimum Structure of Deposited Ultra Thin Silicon Oxynitride Film to Minimize Leakage Current / K. Muraoka ; K. Kurihara ; N. Yasuda ; H. Satake |
| Plasma Damage in Ultra-thin Gate Oxide Induced by Dielectric Deposition Processes: An Overview on Main Mechanisms and Characterization Techniques / J.-P. Carrere ; J.-C. Oberlin ; S. Bruyere ; P. Ferreira |
| Electrical Characterization of Thin Oxide Layers by Impedance Spectroscopy Using Silicon/Oxide/Electrolyte (SOE) Structures / M. Chemla ; V. Bertagna ; R. Erre ; F. Rouelle ; S. Petitdidier ; D. Levy |
| Scaling / Film Preparation and Characterization II / VI.： |
| Ultrathin Silicon Oxynitride Gate Dielectrics / E.P. Gusev ; C.P. D'Emic ; T.H. Zabel ; M. Copel |
| Scaling Issues for Advanced SOI Devices: Gate Oxide Tunneling, Thin Buried Oxide, and Ultra-Thin Films / J. Pretet ; A. Ohata ; F. Dieudonne ; F. Allibert ; N. Bresson ; T. Matsumoto ; T. Poiroux ; J. Jomaah ; S. Cristoloveanu |
| The Effect of the Oxide Network Structure on the Irradiation Behavior of SiO[subscript 2] Films on Silicon / A.G. Revesz ; H.L. Hughes |
| Atomistic Characterization of Radical Nitridation Process on Si(100) Surfaces / Y. Yasuda ; A. Sakai ; S. Zaima |
| Atomic, Electronic Structure and Charge Transport Mechanism in Silicon Nitride and Oxynitride / V.A. Gritsenko ; K.A. Nasyrov |
| Decoupled Plasma Nitridation of Ultra-Thin Gate Oxides for 60-90 nm Technologies / M. Bidaud ; F. Boeuf ; C. Dachs ; C. Parthasarathy ; F. Guyader |
| A Neutron Reflectivity Study of Silicon Oxide Thin Films / A. Menelle ; M.-L Saboungi |
| Rapid Thermal and Anodic Oxidations of LPCVD Silicon Nitride Films / Y.-P. Lin ; J.-G. Hwu |
| MOSFET Degradation with Reverse Biased Source and Drain During High-Field Injection through Thin Gate Oxide / B. Patel ; R.K. Jarwal ; D. Misra |
| Modeling / Optimization / Characterization / VII.： |
| Modeling and Electrical Characterization of MOS Structures with Ultra-Thin Gate Oxide / R. Clerc ; G. Ghibaudo |
| Conduction Modeling of Thick Double-Layer Nitride/Oxide Dielectrics / S. Evseev |
| Contribution of Individual Process Steps on Particle Contamination during Plasma CVD Operation / H. Setyawan ; M. Shimada ; Y. Imajo ; K. Okuyama |
| Plasma Nitridation Optimization for Sub-15A Gate Dielectrics / F.N. Cubaynes ; J. Schmitz ; C. van der Marel ; J.H.M. Snijders ; A. Veloso ; A. Rothschild ; C. Olsen ; L. Date |
| Recovery and Reversibility of Electrical Instabilities in Double-Layer Dielectric Films / A. Cacciato |
| Low-Temperature Oxidation for Gate Dielectrics of Poly-Si TFTs using High-Density Surface Wave Plasma / K. Azuma ; M. Goto ; T. Okamoto ; Y. Nakata |
| Characterization of MIS Tunnel Junctions by Inelastic Electron Tunneling Spectroscopy (IETS) / C. Petit ; G. Salace ; D. Vuillaume |
| Authors Index |
| Subject Index |
| Preface |
| Interface Characterization / I.： |
| Electrical Characterization Techniques for Semiconductor-Silicon Dioxide Interface - A Review / M.J. Deen |
| Si-SiO[subscript 2] Interface Trap Properties and Dependence with Oxide Thickness and with Electrical Stress in MOSFET's with Oxides in the 1-2 nm Range / D. Bauza ; F. Rahmoune |
| EPR Studies of SiC/SiO[subscript 2] Interfaces in n-type 4H-and 6H- Oxidized Porous SIC / H.J. von Bardeleben ; J.L. Cantin ; M. Mynbaeva ; S.E. Saddow ; Y. Shishkin ; R.P. Devaty ; W.J. Choyke |
| Related Oxides / II.： |
Book
Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films