Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A.

>> Google Books

QR code for holdings

Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A. / editors, C.R. Abernathy ... [et al.]

Format:

Book

Published:

Warrendale, Pa. : Materials Research Society, c2004

Description:

xiii, 408 p. ; 24 cm

Series:

Materials Research Society symposium proceedings ; v. 786 <BA00013775>

Authors:

ISBN:

9781558997240 [1558997245]

NCID:

BA66860182

Holding items in this series

Full Text

Holdings

Other editions or volumes

Bibliography Details

Note:

Includes bibliographical references and indexes

Language:

English

Table of Contents:

Preface

Materials Research Society Symposium Proceedings

Fundamentals of the Oxide/Semiconductor Interface

Atomic-Scale Investigation of the Dielectric Screening at the Interface Between Silicon and Its Oxide / Feliciano Giustino ; Alfredo Pasquarello

Ab Initio Study on the [gamma]-Al[subscript 2]O[subscript 3] Surfaces and Interfaces / Henry P. Pinto ; Simon D. Elliott

Theoretical Analysis of Oxygen Diffusion in Monoclinic HfO[subscript 2] / Minoru Ikeda ; Georg Kresse ; Toshihide Nabatame ; Akira Toriumi

Bonding and Epitaxial Relationships at High-k Oxide: Si Interfaces / J. Robertson ; P.W. Peacock

The Band Alignment Problem at the Si-High-k Dielectric Interface / A.A. Demkov ; L.R.C. Fonseca ; J. Tomfohr ; O.F. Sankey

Atomic Scale Modeling of ZrO[subscript 2] and HfO[subscript 2] Atomic Layer Deposition on Silicon: Linking Density Functional Theory and Kinetic Monte Carlo / A. Esteve ; L. Jeloaica ; G. Mazaleyrat ; A. Dkhissi ; M. Djafari Rouhani ; A. Ali Messaoud ; N. Fazouan

Characterization of Dielectrics on Si

Point Defects in Thin HfAlO[subscript x] Films Probed by Monoenergetic Positron Beams / Akira Uedono ; Riichiro Mitsuhashi ; Atsushi Horiuchi ; Kazuyoshi Torii ; Kikuo Yamabe ; Keisaku Yamada ; Ryouichi Suzuki ; Toshiyuki Ohdaira ; Tomohisa Mikado

Electron Spin Resonance Characterization of Defects at Interfaces in Stacks of Ultrathin High-k Dielectric Layers on Silicon / A.L. Stesmans ; V.V. Afanas'ev

Influence of Nitrogen Bonds on Electrical Properties of HfAlO[subscript x](N) Films Fabricated Through LL-D&A Process Using NH[subscript 3] / Kunihiko Iwamaoto ; Tomoaki Nishimura ; Koji Tominaga ; Tetsuji Yasuda ; Koji Kimoto

Characterization of the Electronic Structure and Optical Properties of Al[subscript 2]O[subscript 3], ZrO[subscript 2] and SrTiO[subscript 3] From Analysis of Reflection Electron Energy Loss Spectroscopy in the Valence Region / G.L. Tan ; L.K. Denoyer|cR.H. French ; A. Ramos ; M. Gautier-Soyer ; Y.M. Chiang

Disorder Characterization of Oxide/Silicon Interfaces from I-V Curves / Louis Nemzer ; Fredy R. Zypman

Conductance Transient Comparative Analysis of ECR-PECVD Deposited SiN[subscript x], SiO[subscript 2]/SiN[subscript x] and SiO[subscript x]N[subscript y] Dielectric Films on Silicon Substrates / H. Castan ; S. Duenas ; J. Barbolla ; A. Del Prado ; E. San Andres ; I. Martil ; G. Gonzalez-Diaz

Oxide-Semiconductor Interface Characterization Using Kelvin Probe-AFM in Combination With Corona-Charge Deposition / Bert Lagel ; Maria D. Ayala ; Elena Oborina ; Rudy Schlaf

Characterization of High-k Dielectrics by Combined Spectroscopic Ellipsometry (SE) and X-Ray Reflectometry (XRR) / L. Sun ; C. Defranoux ; J.L. Stehle ; P. Boher ; P. Evrard ; E. Bellandi ; H. Bender

Precise Characterization of Silicon on Insulator (SOI) and Strained Silicon on Si[subscript 1-x]Ge[subscript x] on Insulator (SSOI) Stacks With Spectroscopic Ellipsometry / Lianchao Sun ; Jean-Claude Fouere ; Christophe Defranoux ; Patrice Heinrich ; Christine Dos Reis ; Thierry Emeraud ; Jean-Philippe Piel ; Jean-Louis Stehle

Electrical Characteristics of Metal-(La[subscript 0.27]Y[subscript 0.73])[subscript 2]O[subscript 3]-Silicon Capacitors / E.J. Preisler ; N.A. Bojarczuk ; S. Guha

High-k Dielectrics on Si

Properties of Ultra-Thin Thermal Silicon Nitride / Katherine M. Buchheit ; Hideki Takeuchi ; Tsu-Jae King

Stability of Nitrogen and Hydrogen in High-k Dielectrics / K.P. Bastos ; R.P. Pezzi ; L. Miotti ; G.V. Soares ; C. Driemeier ; J. Morais ; I.J.R. Baumvol

Study of HfAlO[subscript x] Films Deposited by Layer-by-Layer Growth for CMOS High-k Gate Dielectrics / Tsuyoshi Horikawa

On the Interface Quality of MIS Structures Fabricated From Atomic Layer Deposition of HfO[subscript 2], Ta[subscript 2]O[subscript 5] and Nb[subscript 2]O[subscript 5]-Ta[subscript 2]O[subscript 5]-Nb[subscript 2]O[subscript 5] Dielectric Thin Films|cS. Duenas / H. Garcia ; K. Kukli ; M. Ritala ; M. Leskela

Crystallinity and Wet Etch Behavior of HfO[subscript 2] Films Grown by MOCVD / Katherine L. Saenger ; Cyril Cabral Jr. ; Paul C. Jamison ; Edward Preisler ; Andrew J. Kellock

High-k ZrO[subscript 2] Gate Dielectric on Strained-Si / S. Bhattacharya ; S.K. Samanta ; S. Chatterjee ; John McCarthy ; B.M. Armstrong ; H.S. Gamble ; C.K. Maiti ; T. Perova ; A. Moore

Silicide Formation at HfO[subscript 2]/Si and ZrO[subscript 2]/Si Interfaces Induced by Ar[superscript +] Ion Bombardment / Yu. Lebedinskii ; A. Zenkevich ; D. Filatov ; D. Antonov ; J. Gushina ; G. Maximov

Field-Induced Reactions of Water Molecules at Si-Dielectric Interfaces / L. Tsetseris ; X. Zhou ; D.M. Fleetwood ; R.D. Schrimpf ; S.T. Pantelides

Optical and Dielectric Properties of Eu- and Y-Polytantalate Thin Films / Vladimir Vasilyev ; Alvin Drehman ; Helen Dauplaise ; Lionel Bouthillette ; Mark Roland ; Alex Volinsky ; Stefan Zollner ; Wentao Qin

AION Thin Films Formed by ECR Plasma Oxidation for High-K Gate Insulator Application / Go Yamanaka ; Takafumi Uchikawa ; Shun-ichiro Ohmi ; Tetsushi Sakai

Substrate/Oxide Interface Interaction in LaAlO[subscript 3]/Si Structures / T. Busani ; R.A.B. Devine

Silicate Interface Formation During the Deposition of Y[subscript 2]O[subscript 3] on Si / C. Durand ; C. Vallee ; C. Dubourdieu ; M. Bonvalot ; E. Gautier ; O. Joubert

Atomic Layer Deposition of Silica and Group IV Metal Oxides Nanolaminates / Lijuan Zhong ; Fang Chen ; Stephen A. Campbell ; Wayne L. Gladfelter

Improved Structural Properties of Sputtered Hafnium Dioxide on Silicon and Silicon Oxide for Semiconductor and Sensor Applications / H. Gruger ; Ch. Kunath ; E. Kurth ; W. Pufe ; S. Sorge

Fabrication of SrRuO[subscript 3] Epitaxial Thin Films on YBa[subscript 2]Cu[subscript 3]O[subscript x]/CeO[subscript 2]/YSZ-Buffered Si Substrates by Pulsed Laser Deposition / Takamitsu Higuchi ; Koichi Morozumi ; Setsuya Iwashita ; Masaya Ishida ; Tatsuya Shimoda

Growth of Perovskites with Crystalline Interfaces on Si(100) / G.J. Norga ; A. Guiller ; C. Marchiori ; J.P. Locquet ; H. Siegwart ; D. Halley ; C. Rossel ; D. Caimi ; J.W. Seo ; J. Fompeyrine

Low-Temperature Growth of HfO[subscript 2] Dielectric Layers by Plasma-Enhanced CVD / M. Losurdo ; M.M. Giangregorio ; M. Luchena ; P. Capezzuto ; G. Bruno ; D. Barreca ; A. Gasparotto ; E. Tondello

Liquid Injection MOCVD of Rare-Earth Oxides Using New Alkoxide Precursors / Paul A. Williams ; Anthony C. Jones ; Helen C. Aspinall ; Jeffrey M. Gaskell ; Paul R. Chalker ; Paul A. Marshall ; Yim F. Loo ; Lesley M. Smith

Ultra Shallow Incorporation of Nitrogen Into Gate Dielectrics by Pulse Time Modulated Plasma / Seiichi Fukuda ; Yoshimune Suzuki ; Tomoyuki Hirano ; Takayoshi Kato ; Akihide Kashiwagi ; Masaki Saito ; Shingo Kadomura ; Youichi Minemura ; Seiji Samukawa

Thermally Grown and Reoxidized Nitrides as Alternative Gate Dielectrics / Alexandra Ludsteck ; Waltraud Dietl ; Hinyiu Chung ; Joerg Schulze ; Zsolt Nenyei ; Ignaz Eisele

On the Thermal Re-Oxidation of Silicon Oxynitride / Arturo Morales-Acevedo ; G. Francisco Perez-Sanchez

High-k Oxides, Metal Gates and Integration

Study of Metal Gate Work Function Modulation Using Plasma and SiH[subscript 4] Treated TiN Thin Films / F. Fillot ; S. Maitrejean ; T. Farjot ; B. Guillaumot ; B. Chenevier ; G. Passemard

Structural Comparisons of SiO[subscript x] and Si/SiO[subscript x] Formed by Passivation of Single-Crystal Silicon by Atomic and Molecular Oxygen / Maja Kisa ; Ray D. Twesten ; Judith C. Yang

Nitrided Hafnium Silicate Film Formation by Sequential Process Using a Hot Wall Batch System and Its Application to MOS Transistor / Tomonori Aoyama ; Riichirou Mitsuhashi ; Takeshi Maeda ; Satoshi Kamiyama ; Hiroshi Kitajima ; Tsunetoshi Arikado

Flat-Band Voltage Shift of MOS Capacitors With Tantalum Nitride Gate Electrodes Induced by Post Metallization Annealing / M. Kadoshima ; K. Yamamoto ; H. Fujiwara ; K. Akiyama ; K. Tominaga ; N. Yamagishi ; K. Iwamoto ; M. Ohno ; T. Yasuda ; T. Nabatame ; A. Toriumi

Study of Work Function of CVD WSi[subscript x] Thin Film on High-k Dielectric / S. Allegret

Oxide Reduction in Advanced Metal Stacks for Microelectronic Applications / Alex A. Volinsky ; Dennis Werho ; N. David Theodore

Long Retention Performance of a MFIS Device Achieved by Introducing High-k Al[subscript 2]O[subscript 3]/Si[subscript 3]N[subscript 4]/Si Buffer Layer / Yoshihisa Fujisaki ; Kunie Iseki ; Hiroshi Ishiwara

Investigation of Retention Properties for YMnO[subscript 3] Based Metal/Ferroelectric/Insulator/Semiconductor Capacitors / T. Yoshimura ; D. Ito ; H. Sakata ; N. Shigemitsu ; K. Haratake ; A. Ashida ; N. Fujimura

Characterization of Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) FETs Using (Sr,Sm)[subscript 0.8]Bi[subscript 2.2]Ta[subscript 2]O[subscript 9] (SSBT) Thin Films / Hirokazu Saiki ; Eisuke Tokumitsu

Selective Deposition of C-axis Oriented Pb[subscript 5]Ge[subscript 3]O[subscript 11] on the Patterned High-k Gate Oxide by MOCVD Processes / Tingkai Li ; Sheng Teng Hsu ; Bruce Ulrich ; Dave Evans

Novel Oxides for Compound Semiconductor Electronics

Determination of Nano Fluctuations in Surface Oxides of GaSb With Br-IBAE / K. Krishnaswami ; B. Krejca ; S.R. Vangala ; C. Santeufemio ; L.P. Allen ; M. Ospina ; X. Liu ; C. Sung ; K. Vaccaro ; W.D. Goodhue

p-Type in ZnO:N by Codoping With Cr / E. Kaminska ; A. Piotrowska ; J. Kossut ; R. Butkute ; W. Dobrowolski ; K. Golaszewska ; A. Barcz ; R. Jakiela ; E. Dynowska ; E. Przezdziecka ; D. Wawer

Structural and Electrical Properties of HfO[subscript 2] Films Grown by Atomic Layer Deposition on Si, Ge, GaAs and GaN / Marco Fanciulli ; Sabina Spiga ; Giovanna Scarel ; Grazia Tallarida ; Claudia Wiemer ; Gabriele Seguini

Microstructure and Electrical Properties of Zinc Oxide Thin Film Varistors Prepared by RF Sputtering / Keng-Ming Chang ; Chuan-Pu Liu ; Chon-Ming Tsai

Transparent Transistors Based on Semiconducting Oxides / Y.W. Kwon ; Y. Li ; Y.W. Heo ; M. Jones ; Vijay Varadarajan ; B.S. Jeong ; J. Zhou ; S. Li ; P. Holloway ; D.P. Norton

Electronic Structure of Zn(Mn)O Surface Alloy--A Resonant Photoemission Study / E. Guziewicz ; K. Kopalko ; J. Sadowski ; M. Guziewicz ; Z. Golacki

Elementary Processes During the Epitaxial Growth of Metal Oxides: MgO/MgO(001) / Gregory Geneste ; Joseph Morillo ; Fabio Finocchi ; Marc Hayoun

Passivation of Oxide Layers on 4H-SiC Using Sequential Anneals in Nitric Oxide and Hydrogen / J.R. Williams ; T. Isaacs-Smith ; S. Wang ; C. Ahyi ; R.M. Lawless ; C.C. Tin ; S. Dhar ; A. Franceschetti ; L.C. Feldman ; G. Chung ; M. Chisholm

Hetero-Epitaxy of Crystalline Perovskite Oxides on GaAs(001) / Y. Liang ; J. Kulik ; Y. Wei ; T. Eschrich ; J. Curless ; B. Craigo ; S. Smith

The Oxide/Nitride Interface: A Study for Gate Dielectrics and Field Passivation / B.P. Gila ; B. Luo ; J. Kim ; R. Mehandru ; J.R. LaRoche ; A.H. Onstine ; E. Lambers ; K. Siebein ; C.R. Abernathy ; F. Ren ; S.J. Pearton

Growth of Scandium Magnesium Oxide on GaN / A. Herrero

Author Index

Subject Index