State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia

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State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia / editors, R.F. Kopf ... [et al.] ; sponsoring divisions, Electronics

Format:

Book

Published:

Pennington, N.J. : Electrochemical Society, c2003

Description:

x, 408 p. ; 24 cm

Series:

Proceedings / [Electrochemical Society] ; v. 2003-11 <BA01323290>

Authors:

ISBN:

9781566773911 [1566773911]

NCID:

BA69423082

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Note:

"The 39th State-of-the-Art Program on Compound Semiconductors symposia and the 4th Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics are held at the 204th Meeting of the Electrochemical Society, October 12-17, 2003 in Orlando, Florida,USA"--on pref
Includes bibliographical references and indexes

Language:

English

Table of Contents:

Preface

Symposium Organizers

State-Of-The-Art Program on Compound Semiconductors XXXIX

Polarity-Selective Chemical Etching of GaN: From Nanotip Pyramids to Photonic Crystals / H. Ng ; A. Chowdhury ; W. Parz ; N. Weimann

Growth and Characterization of High Quality GaN on Silicon (111) Substrate / L. Chou ; Y. Chueh ; S. Chiou ; S. Gwo

Growth and Characterization of InGaN Quantum Dots in InGaN/GaN Superlattices / C.-P. Liu ; R. Chen ; Y.-L. Lai

Long-wavelength emission of GaInNAs Quantum Dots Grown on GaAs (001) / C.W. Tu

Development of 850nm VCSELs for OC-192 Applications / H.-C. Kuo ; Y.-H. Chang ; T.-H. Hseuh ; F. Lai ; S.-C. Wang

Development of InGaAsN-based 1300 nm VCSELs / Y.-L. Chang ; T. Takeuchi ; M. Leary ; D. Mars ; A. Tandon ; R. Twist ; S. Belov ; D. Bour ; M. Tan ; D. Roh ; Y.-K. Song ; L. Mantese ; A. Luan

Influence of a Low Composition InxGal-xN/GaN Superlattice on the Optical Properties of Blue and Green InxGal-xN Based LEDs / J. Ramer ; D. Florescu ; D. Lee ; E. Armour

Dramatic Improvements in AlGaN/GaN HEMT Device Isolation Characteristics After UV-Ozone Pre-Treatment / N. Moser ; R. Fitch ; D. Via ; A. Crespo ; M. Yannuzzi ; G. Jessen ; J. Gillespie ; B. Luo ; F. Ren ; C. Abernathy ; S. Pearton ; B. Gila

Electric Field Modulation of ZnO Film Conductance in ZnO-Based FET Structures / Y.W. Kwon ; D. NOrton

Growth of Polycrystalline HgSe by Electrochemical Atomic-layer Epitaxy (EC-ALE) / M. Mathe ; S. Cox ; U. Happek ; J. Stickney

Effect of the Intermetallic Compounds on the Joint Strength of the Optical Module / N.-K. Kim ; K.-S. Kim ; N.-H. Kim ; E.-G. Chang

Fabrication of nTiO2Thin Films by SPD Method for Efficient Photosplitting of Water / S. Khan ; S. Smith

Resource Conservation and Fab Cost Saving Through DIW and Chemical Consumption Reduction in Pre-diffusion Cleaning Processes / M. Strada

Growth and Characterization of High-Ge Content SiGe Virtual Substrates / M. Erdtmann ; M. Carroll ; J. Carlin ; T. Langdo ; R. Westhoff ; C. Leitz ; V. Yang ; M. Currie ; T. Lochtefeld ; K. Petrocelli ; C. Vineis ; H. Badawi ; M. Bulsara

Spray Pyrolytically Deposited Zn-doped p-Fe2O3 for Photoelectrolysis of Water / W. Ingler Jr.

Characterization of Silicon Carbide Electrochemical Etch in Hydrofluoric Acid Aqueous Solution / G. D'Arrigo ; C. Bongiorno ; V. Raineri

Surface Pitting and Porous Layer Growth on n-InP Anodes / C. O'Dwyer ; M. Serantoni ; D.N. Buckley

UHV-EC Studies of Wet Cleaning Procedures for GaAs Substrates for Electrodeposition / M. Muthuvel ; L. Ward

Crystal Quality Determination of Wide Bandgap Materials Using X-ray Techniques / P. Feichtinger ; K. Bowen ; B. Poust ; M. Goorsky ; M. Wojtowicz ; R. Sandhu

Mg Doping Concentration Influenced by Polarity of GaN Layer in InGaN/GaN Superlattice Structure / Y.-W. Lin

Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics symposium IV

High Performance Wide-Bandgap Photonic and Electronic Devices Grown by MBE / A.M. Dabiran ; A. Osinsky ; B. Hertog ; M.A. Kauser ; P.P. Chow ; V. Kumar ; I. Adesida

High Efficiency Nitride LEDs for use in Solid State Lighting Applications / A.J. Fischer ; D.D. Koleske ; A.A. Allerman ; M.H. Crawford ; K.H.A. Bogart ; C.C. Mitchell ; D.M. Follstaedt ; K.C. Cross ; K.W. Fullmer ; J.J. Figiel

Optical Properties of GaN/AlN Quantum Dots grown by Molecular Beam Epitaxy / A. Neogi

Cathodoluminescence Studies of Electron Injection-Induced Effects in III-Nitrides / William Burdett ; Leonid Chernyak ; Andre Osinski

Mg Surface Treatment for Optimizing Contact and Bulk Properties of p-type GaN Grown by Ammonia- Molecular-Beam Epitaxy / H. Tang ; J.A. Bardwell ; J. B. Webb ; S. Rolfe ; S. Moisa ; I. Sproule ; S. Raymond

Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics / B.P. Gila ; J. Kim ; R. Mehandru ; J.R. LaRoche ; A.H. Onstine ; C.R. Abernathy ; S.J. Pearton

Fabrication, Characterization and Applications of AlInGaN Light-Emitting Diodes / X. A. Cao ; S. D. Arthur ; A. Ebong ; S. F. LeBoeuf ; D. W. Merfeld

High Energy and Spatial Resolution EELS from GaN / I. Arslan ; S. Ogut ; N. D. Browning

Localized Quantum State Luminescence from Wide Bandgap ZnS and GaN Thin Films / Nigel Shepherd ; Ajay Kale ; William Glass ; Joo Han Kim ; David DeVito ; Mark Davidson ; Paul H. Holloway

Laser-Metallized Silicon Carbide Schottky Diodes for Millimeter Wave Detection and Frequency Mixing / I. A. Salama ; C. F. Middleton ; N. R. Quick ; G. D. Boreman ; A. Kar

Surface State Characterization Methods for SiO[subscript 2] on 4H-SiC / J. R. LaRoche ; J. W. Johnson ; B. S. Kang ; Y. Irokawa ; S. J. Pearton ; G. Chung

The Effect of External Strain on the Conductivity of AlGaN/GaN High Electron Mobility Transistors / S. Kim ; K. Baik ; B. P. Gila ; C. R. Abernathy ; C. -C. Pan ; G. -T. Chen ; J. -I. Chyi ; V. Chandrasekaran ; M. Sheplak ; T. Nishida ; S. N. G. Chu

High Performance AlGaN/GaN HEMTs with Recessed Gate / Yoshiaki Sano ; Katsuaki Kaifu ; Juro Mita ; Hideyuki Okita ; Tomohiko Sagimori ; Takashi Ushikubo ; Hiroyasu Ishikawa ; Takashi Egawa ; Takashi Jimbo

GaN Power Rectifiers and Field-Effect Transistors on Free-Standing GaN Substrates / Jihyun Kim ; S. S. Park ; Y. J. Park ; K. H. Baik|cS. J. Pearton

Chemical Sensing with GaN Devices / Martin Eickhoff ; Georg Steinhoff ; Olaf Weidemann ; Martin Hermann ; Barbara Baur ; Gerhard Mueller ; Martin Stutzmann

Magnetic Doping of III-V Nitrides and Novel Room Temperature Sensing Applications / J. M. Zavada ; R. M. Frazier ; J. Kelly ; R. Rairigh ; A. F. Hebard ; J.Y. Lin ; H.X. Jiang

Optimization of GaMnN Growth Conditions for Novel Spintronic Applications / G.T. Thaler ; R.M. Frazier ; R. Rairaigh ; A. Hebard

Growth of MgCaO on GaN / A. H. Onstine ; A. Herrero ; B. F. Ren

In-Situ Chemical Surface Treatments For The Removal of AlN/SiC Interfacial Contamination / D.O. Stodilka ; E. Lambers

Design, Fabrication, and Evaluation of High Performance Diamond-Based Power Diodes / Yasar Gurbuz ; Weng P. Kang ; Jimmy L. Davidson

Ferromagnetism In Mn- And Sn-Doped ZnO Films Grown By Pulsed Laser Deposition / M. Ivill ; D.P. Norton ; A.F. Hebard

Synthesis and Characterization of Ferromagnetic AlN and AlGaN Layers / G. T. Thaler ; M. L. Nakarmi ; J. Y. Lin ; H. X. Jiang ; R. G Wilson

Electronic Structure Of GaNP: Insights From Optical Studies / A. Buyanova ; W.M. Chen ; A. Polimeni ; M. Capizzi

Author Index

Subject Index