| Symposium Chairs |
| Preface |
| Table of Contents |
| Facts about the Electrochemical Society |
| High-K Gate Dielectrics - General / Chapter 1： |
| Challenges for the Integration of High-K Gate Dielectrics / M. Quevedo-Lopez ; B. E. Gnade ; R. M. Wallace |
| Correlation between the Material Constants and a Figure of Merit for the High-K Gate Dielectrics / S. Kar ; R. Singh |
| Binary Oxide High-K Gate Dielectrics / Chapter 2： |
| High Dielectric Constant Gate Insulator Technology using Rare Earth Oxides / H. Iwai ; S. Ohmi ; S. Akama ; C. Ohshima ; I. Kashiwagi ; A. Kikuchi ; J. Taguchi ; H. Yamamoto ; I. Ueda ; A. Kuriyama ; J. Tonotani ; Y. Kim ; Y. Yoshihara ; H. Ishiwara |
| High Quality ZrO[subscript 2] Thin Films on [left angle bracket]100[right angle bracket] Si Substrates as a Gate Dielectric Material: Processing and Characterization / M. Fakhruddin ; K. F. Poole ; S. V. Kondapi |
| HfO[subscript 2] Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium / J. Schaeffer ; N. V. Edwards ; R. Liu ; D. Roan ; B. Hradsky ; R. Gregory ; J. Kulik ; E. Duda ; L. Contreras ; J. Christiansen ; S. Zollner ; P. Tobin ; B.-Y. Nguyen ; R. Nieh ; M. Ramon ; R. Rao ; R. Hegde ; R. Rai ; J. Baker ; S. Voight |
| Electrical Characteristics Improvement of Dy[subscript 2]O[subscript 3] Thin Films by In-Situ Vacuum Anneal |
| Electrical and Physical Characterization of Zirconium-Doped Tantalum Oxide Films / J.-Y. Tewg ; J. Lu ; Y. Kuo ; B. Schueler |
| Effect of Deposition Sequence and Plasma Treatment on ALCVD HfO[subscript 2] n-MOSFET Properties / C. Lim ; A. Hou ; J. Gutt ; S. Marcus ; C. Pomarede ; E. Shero ; H. de Waard ; C. Werkhoven ; L. Chen ; J. Tamim ; N. Chaudhary ; G. Bersuker ; J. Barnett ; C. Young ; P. Zeitzoff ; G. A. Brown ; M. Gardner ; R. W. Murto ; H. R. Huff |
| Characteristics of High-K Gd[subscript 2]O[subscript 3] Films Deposited on Different Orientation of Si Substrate |
| Hafnium-Doped Tantalum Oxide High-K Dielectrics / P. C. Liu |
| Silicate/Aluminate High-K Dielectrics and Reliability / Chapter 3： |
| Defect Generation in High-K Dielectric Stacks: Characterization and Modelling / M. Houssa ; J. L. Autran ; V. V. Afanas'ev ; A. Stesmans ; M. M. Heyns |
| Ultra-Thin Zirconium and Hafnium Silicate Films Deposited by MOCVD on Si(100) / D. Landheer ; X. Wu ; H.-W. Chen ; M.-S. Lee ; S. Moisa ; T.-Y. Huang ; T.-S. Chao ; Z.-H. Lu ; W. N. Lennard |
| Effect of Post-Annealing on the Electrical Properties of ZrO[subscript 2] and ZrAlO / M. Mansouri ; Y.-L. Chiou ; Y. Ono ; S. T. Hsu |
| Improved Scalability of High-K Gate Dielectrics by using Hf-Aluminates / T. H. Hou ; H. de Warrd |
| Reliability and Plasma-Induced Degradation of High-K Gate Dielectrics in MOS Devices / K.-S. Chang-Liao ; P.-J. Tzeng |
| Stability of High-K Thin Films for Wet Process |
| High-K Gate Dielectric Interfaces / Chapter 4： |
| Nitrogen Incorporation and High Temperature Forming Gas Anneal For High-K Gate Dielectrics / J. C. Lee ; R. Choi ; K. Onishi ; H. Cho ; C. Kang ; S. Krishnan |
| Integrity of Hafnium Silicate/Silicon Dioxide Ultrathin Films on Silicon / J. Morais ; L. Miotti ; G. V. Soares ; R. Pezzi ; K. P. Bastos ; M. C. M. Alves ; I. J. R. Baumvol ; A. L. P. Rotondaro ; J. J. Chambers ; M. R. Visokay ; L. Colombo |
| Suppression of Silicidation for Zirconia, Hafnia, and Silicate on Silicon by Helium Annealing / K. Muraoka |
| Analysis of Electrically Active Defects at Si(100)-HfO[subscript 2] Interface / B. J. O'Sullivan ; E. O'Connor ; P. K. Hurley ; M. Modreanu ; F. Roussel ; H. Roussel ; M. A. Audier ; J. P. Senateur ; Q. Fang ; I. W. Boyd ; C. Jimenez ; T. Leedham |
| Thermal Stability of the HfO[subscript 2]/SiO[subscript x]N[subscript y]-Si Interface / R. P. Pezzi ; H. Boudivov ; R. I. Hegde ; H. H. Tseng ; P. J. Tobin |
| Non-Contact Electrical Characterization of High-Dielectric-Constant (High-K) Materials / P. Y. Hung ; B. Foran ; A. Diebold ; X. Zhang ; C. Oroshiba |
| High-K Capacitor Dielectrics / Chapter 5： |
| Ruthenium Bottom Electrode Prepared by Electroplating for High-K DRAM Capacitor / J. J. Kim ; O. J. Kwon ; M. S. Kang |
| Regional Charge Transport Characteristics of Integrated Metal-Oxide MIM Capacitors / D. R. Roberts ; S. Kalpat ; T. P. Remmel ; M. A. Said ; M. V. Raymond ; R. Ramprasad ; E. D. Luckowski ; M. Miller |
| High Capacitance and Low Leakage Ta[subscript 2]O[subscript 5] MIM Capacitor for DRAM / W. Li ; G. S. Sandhu |
| High Dielectric Constant Metal Oxide Films via Photochemical Metal Organic Deposition (PMOD) Process / S. P. Mukherjee ; P. J. Roman, Jr. ; H. O. Madsen ; L. G. Svendsen ; M. A. Fury ; S. J. Barstow ; A. Jeykumar ; C. L. Henderson |
| Seed Layer Free Ruthenium Precursor for MOCVD / N. Oshima ; T. Shibutami ; K. Kawano ; S. Yokoyama ; H. Funakubo |
| Low-Leakage Tantalum Oxide MIM Capacitor Module for Cu-Interconnected RF BiCMOS Technology / C. C. Barron ; M. Sadd ; P. Zurcher |
| Author Index |
| Subject Index |
| Interface Issues |
| Tailoring High-K/Silicon Interface for Nanoelectronics Applications / R. Puthenkovilakam ; J. Chang |
| Reducing the Interfacial Formation of SiO[subscript x] in HfO[subscript 2] MOS Structures: A Study in Pre-Deposition Cleaning and Surface Oxidation, and Post-Deposition Annealing / H. Harris ; K. Choi ; N. Biswas ; I. Chary ; L. Xie ; N. Mehta ; G. Kipshidze ; M. White ; H. Temkin ; S. Gangopadhyay |
| Influence of the 5 A TaN[subscript x] Interface Layer on Dielectric Properties of the Zr-Doped TaO[subscript x] High-K Film |
| Plasma Modification of Hf Based High-K Dielectrics: Effect of Nitridation and Silicon Nitride Deposition / W. Tsai ; J. W. Maes ; H. De Witte ; J. Chen ; A. Delabie ; R. Carter ; O. Richard ; M. Caymax ; T. Conrad ; E. Young ; S. DeGendt |
| Method for Determining the Effectiveness of Silicon Nitride as a Barrier Layer for HfO[subscript 2] / H. Kraus ; J. Snow ; P. van Doorne ; W. Fyen ; P. W. Mertens ; F. Kovacs |
| Effect of Surface Preparation on High-K Gate Stack Device Performance / N. Moumen ; B. H. Lee ; J. Peterson |
| Deposition Methods and Processing - I |
| Some Recent Developments in the Metalorganic Chemical Vapor Deposition of High-K Dielectric Oxides / P. R. Chalker ; A. C. Jones |
| A Comparative Study of Erbium Oxide and Gadolinium Oxide High-K Dielectric Thin Films Grown by Low-Pressure Metalorganic Chemical Vapour Deposition (MOCVD) using [beta]-Diketonates as Precursors / M. P. Singh ; C. S. Thakur ; K. Shalini ; T. Shripathi ; N. Bhat ; S. A. Shivashankar |
| HfO[subscript x]N[subscript y] and HfSi[subscript x]O[subscript y]N[subscript z] High-K Layers Deposited by MOCVD in Mixed Gas Flows of N[subscript 2]O and O[subscript 2] / C. Zhao ; S. Van Elshocht ; T. Conard ; Z. Xu ; S. DeGendt|cM. Heyns |
| Electrical Characterization - I |
| Internal Photoemission over High-K Insulating Barriers / V. V. Afanas'ev |
| Leakage Current Behavior of HfO[subscript 2] Thin Films / M. N. Jones ; Y. W. Kwon ; D. P. Norton |
| Experimental Values of a Quantization Index of the Accumulation Layers of Different High-K Gate Dielectrics / T. Kachru ; M. Bhagat |
| Deposition Methods and Processing - II |
| Tensile Strain in Si due to Expansion of Lattice Spacings in CeO[subscript 2] Epitaxially Grown on Si (111) / Y. Nishikawa ; D. Matsushita ; N. Satou ; M. Yoshiki ; T. Schimizu ; T. Yamaguchi ; H. Satake ; N. Fukushima |
| Selective Wet Etching of Hf-based Layers / M. Claes ; V. Paraschiv ; H. Boutkabout ; T. Witters ; E. Rohr ; B. Coenegrachts ; J. Vertommen ; R. Lindsay ; W. Boullart ; M. Heyns |
| Alternating Pulse Deposition of High-K Metal Oxide Thin Films using Hf(NO[subscript 3])[subscript 4] as a Metal and an Oxygen Source with Multiple In-Situ Annealing / J.F. Conley, Jr. ; D. Tweet ; G. Stecker ; R. Solanki ; W.W. Zhuang |
| Improvement of Electrical Properties of Alumina Films by Nitrogen Added Plasma Enhanced Atomic Layer Deposition / J.W. Lim ; S.J. Yun ; J.H. Lee |
| The Role of TXRF in the Introduction of High-K Materials into IC Processing / D. Hellin ; B. Onsia ; C. Vinckier |
| Metal Gates |
| Characterization of Resistivity and Work Function of Sputtered-TaN Film for Gate Electrode Applications / C. S. Kang ; H.-J. Cho ; Y. H. Kim ; C. Y. Kang ; A. Shahriar ; C. H. Choi ; S. J. Rhee |
| NbO as a Gate Electrode for NMOSFETs / W. Gao ; J. F. Conley |
| A Novel Iridium Precursor for MOCVD / M. Takamori ; T. Yamakawa ; S. Watari ; H. Fujisawa ; M. Shimizu ; H. Niu |
| Advanced Ruthenium Precursors for Thin Film Deposition / C. A. Hoover ; M. M. Litwin ; J. Peck ; G. B. Piotrowski ; D. M. Thompson |
| Silicates and Effects of Post-Deposition Treatments / Chapter 6： |
| Effects of NH[subscript 3] Annealing on High-K HfSiON/HfO[subscript 2] Gate Stack Dielectrics |
| Nitridation of Hafnium Silicate Thin Films Deposited by Atomic Layer Deposition / Y. Senzaki ; H. Chatham ; R. Higuchi ; C. Bercaw ; J. DeDontney |
| Thermal Stability and Compatibility with Cmos Processing / Chapter 7： |
| Scaling of Hf-Based Gate Dielectrics--Integration with Polysilicon Gates / W. Deweerd ; V. Kaushik ; A. Kerber ; S. Kubicek ; M. Niwa ; L. Pantisano ; R. Puurunen ; L. Ragnarsson ; T. Schram ; Y. Shimamoto ; W. Vandervorst |
| Suppression of Silicidation in Poly-Si/High-K Insulator/SiO[subscript 2]/Si Structure by Helium Through Process |
| Effect of Post Metallization Annealing for La[subscript 2]O[subscript 3] Gate Thin Films on Electrical Characteristics / S.-I. Ohmi ; K. Tsutsui |
| Defect Characterization and Reliability / Chapter 8： |
| Photoelectron Spectroscopy Investigation of High K Dielectrics / K. Demirkan ; A. Mathew ; R. L. Opila |
| Soft Breakdown Phenomena in High-K Gate Dielectrics |
| Low Frequency Noise Study of n-MOSFETs with HfO[subscript 2] Gate Dielectric / E. Simoen ; A. Mercha ; C. Claeys |
| Simulations of Bias Temperature Instabilities in p-MOSFETs with Hf[subscript x]SiO[subscript y]-Based Gate Dielectrics / C. Bizzari |
| The Effects of Forming Gas Anneal Temperature and Dielectric Leakage Current on TDDB Properties of HfO[subscript 2] Devices / Y.-H. Kim |
| Charge Trapping and Electron Mobility Degradation in MOCVD Hafnium Silicate Gate Dielectric Stack Structures / C. D. Young ; T.H. Hou ; E. Cartier ; P. Lysaght ; J. Bennett ; C.-H. Lee ; S. Gopalan ; G. Groeseneken |
| Electrical Characterization - II / Chapter 9： |
| High Hole Mobility of Al[subscript 2]O[subscript 3] MOSFETs on Dislocation Free Ge-on-Insulator Wafers / A. Chin ; D.S. Yu ; C.H. Wu ; C.H. Huang ; W.J. Chen |
| Extraction of the High-K Gate Dielectric Parameters from the Capacitance Data |
| Characteristics of Thermally Evaporated HfO[subscript 2] / R. Garg ; N. A. Chowdhury ; R. K. Jarwal ; D. Misra ; P. K. Swain ; M. Bhaskaran |
| Characterization of High-K Dielectric Stacks for Flash Memory Applications / Y.L. Chiou |
| Electrical Characteristics of High-K Stack Gate Dielectric Thin Films with La[subscript 2]O[subscript 3] as a Buffer Layer |
| Low-frequency Noise Characteristics of MISFETs with La[subscript 2]O[subscript 3] Gate Dielectrics / H. Sauddin |
| Investigation of High-K Dielectric Properties with the Non-Contact SASS Technique / M. Wilson ; J. Lagowski ; J. D'Amico ; P. Edelman ; A. Savtchouk |
| Electrical Characteristics of High-K La[subscript 2]O[subscript 3] Thin Film Deposited by E-Beam Evaporation Method |
| Ferroelectric Layers and Memory Devices / Chapter 10： |
| Reduction in Programming Voltage of Non-Volatile Flash Memory Using High-K Dielectric Stacks / Y. L. Chiou |
| Reaction Mechanism of a Titanium Source, Ti(MPD)(METHD)[subscript 2], in Metalorganic Chemical Vapor Deposition of (Ba,Sr)TiO[subscript 3] Films / T. Nishimura ; T. Nakamura ; K. Tachibana |
| Characteristics of (Pb, Sr)TiO[subscript 3] Films Post Treated by Low Temperature Technologies / J.-L. Wang ; C.-K. Jan ; D.-C. Shye ; M.-W. Kuo ; H.-C. Cheng |
| Symposium Chairs |
| Preface |
| Table of Contents |
| Facts about the Electrochemical Society |
| High-K Gate Dielectrics - General / Chapter 1： |
| Challenges for the Integration of High-K Gate Dielectrics / M. Quevedo-Lopez ; B. E. Gnade ; R. M. Wallace |
Book
Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing