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1.

Book
Book
1. Proceedings of the Symposium on Diagnostic Techniques for Semiconductor Materials and Devices
editors, D.K. Schroder, J.L. Benton, P. Rai-Choudhury
Published: Pennington, NJ : Electrochemical Society, c1994  xi, 387 p. ; 23 cm
Series: Proceedings / [Electrochemical Society] ; v. 94-33
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2.

Book
Book
2. Semiconductor material and device characterization
Dieter K. Schroder
Published: New York : Wiley, c1990  xv, 599 p. ; 25 cm
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Table of Contents: Read more
Preface to Third Edition
Resistivity / 1：
Introduction / 1.1：
Two-Point Versus Four-Point Probe / 1.2：
Wafer Mapping / 1.3：
Resistivity Profiling / 1.4：
Contactless Methods / 1.5：
Conductivity Type / 1.6：
Strengths and Weaknesses / 1.7：
Resistivity as a Function of Doping Density / Appendix 1.1：
Intrinsic Carrier Density / Appendix 1.2：
References
Problems
Review Questions
Carrier and Doping Density / 2：
Capacitance-Voltage (C-V) / 2.1：
Current-Voltage (I-V) / 2.3：
Measurement Errors and Precautions / 2.4：
Hall Effect / 2.5：
Optical Techniques / 2.6：
Secondary Ion Mass Spectrometry (SIMS) / 2.7：
Rutherford Backscattering (RBS) / 2.8：
Lateral Profiling / 2.9：
Parallel or Series Connection? / 2.10：
Circuit Conversion / Appendix 2.2：
Contact Resistance and Schottky Barriers / 3：
Metal-Semiconductor Contacts / 3.1：
Contact Resistance / 3.3：
Measurement Techniques / 3.4：
Schottky Barrier Height / 3.5：
Comparison of Methods / 3.6：
Effect of Parasitic Resistance / 3.7：
Alloys for Contacts to Semiconductors / Appendix 3.2：
Series Resistance, Channel Length and Width, and Threshold Voltage / 4：
PN Junction Diodes / 4.1：
Schottky Barrier Diodes / 4.3：
Solar Cells / 4.4：
Bipolar Junction Transistors / 4.5：
MOSFETS / 4.6：
MESFETS and MODFETS / 4.7：
Threshold Voltage / 4.8：
Pseudo MOSFET / 4.9：
Schottky Diode Current-Voltage Equation / 4.10：
Defects / 5：
Generation-Recombination Statistics / 5.1：
Capacitance Measurements / 5.3：
Current Measurements / 5.4：
Charge Measurements / 5.5：
Deep-Level Transient Spectroscopy (DLTS) / 5.6：
Thermally Stimulated Capacitance and Current / 5.7：
Positron Annihilation Spectroscopy (PAS) / 5.8：
Activation Energy and Capture Cross-Section / 5.9：
Time Constant Extraction / Appendix 5.2：
Si and GaAs Data / Appendix 5.3：
Oxide and Interface Trapped Charges, Oxide Thickness / 6：
Fixed, Oxide Trapped, and Mobile Oxide Charge / 6.1：
Interface Trapped Charge / 6.3：
Oxide Thickness / 6.4：
Capacitance Measurement Techniques / 6.5：
Effect of Chuck Capacitance and Leakage Current / Appendix 6.2：
Carrier Lifetimes / 7：
Recombination Lifetime/Surface Recombination Velocity / 7.1：
Generation Lifetime/Surface Generation Velocity / 7.3：
Recombination Lifetime-Optical Measurements / 7.4：
Recombination Lifetime-Electrical Measurements / 7.5：
Generation Lifetime-Electrical Measurements / 7.6：
Optical Excitation / 7.7：
Electrical Excitation / Appendix 7.2：
Mobility / 8：
Conductivity Mobility / 8.1：
Hall Effect and Mobility / 8.3：
Magnetoresistance Mobility / 8.4：
Time-of-Flight Drift Mobility / 8.5：
MOSFET Mobility / 8.6：
Contactless Mobility / 8.7：
Semiconductor Bulk Mobilities / 8.8：
Semiconductor Surface Mobilities / Appendix 8.2：
Effect of Channel Frequency Response / Appendix 8.3：
Effect of Interface Trapped Charge / Appendix 8.4：
Charge-based and Probe Characterization / 9：
Background / 9.1：
Surface Charging / 9.3：
The Kelvin Probe / 9.4：
Applications / 9.5：
Scanning Probe Microscopy (SPM / 9.6：
Optical Characterization / 9.7：
Optical Microscopy / 10.1：
Ellipsometry / 10.3：
Transmission / 10.4：
Reflection / 10.5：
Light Scattering / 10.6：
Modulation Spectroscopy / 10.7：
Line Width / 10.8：
Photoluminescence (PL / 10.9：
Raman Spectroscopy / 10.10：
Transmission Equations / 10.11：
Absorption Coefficients and Refractive Indices for SelectedSemiconductors / Appendix 10.2：
Chemical and Physical Characterization / 11：
Electron Beam Techniques / 11.1：
Ion Beam Techniques / 11.3：
X-Ray and Gamma-Ray Techniques / 11.4：
Selected Features of Some Analytical Techniques / 11.5：
Reliability and Failure Analysis / 12：
Failure Times and Acceleration Factors / 12.1：
Distribution Functions / 12.3：
Reliability Concerns / 12.4：
Failure Analysis Characterization Techniques / 12.5：
Gate Currents / 12.6：
List of Symbols / Appendix 1：
Abbreviations and Acronyms / Appendix 2：
Index
Preface to Third Edition
Resistivity / 1：
Introduction / 1.1：
3.

Book
Book
3. Applications of electronic imaging systems, March 30-31, 1978, Washington, D.C.
Richard E. Franseen, Dr. Dieter K. Schroder, editors ; presented by the Society of Photo-Optical Instrumentation Engineers
Published: Bellingham, Wash. : SPIE, c1979  vi, 188 p. ; 28 cm
Series: Proceedings of the Society of Photo-Optical Instrumentation Engineers ; v.143
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4.

Book
Book
4. Proceedings of the Symposium on Diagnostic Techniques for Semiconductor Materials and Devices
edited by Thomas J. Shaffner, Dieter K. Schroder
Published: Pennington, NJ : Electrochemical Society, c1988  vi, 289 p. ; 23 cm
Series: Proceedings / [Electrochemical Society] ; v. 88-20
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5.

Book
Book
5. 半導体材料・デバイスの評価 : パラメータ測定と解析評価の実際
ディーター・K・シュロゥダー著 ; 嶋田恭博訳
Published: 東京 : シーエムシー出版, 2012.5  vii, 583p ; 21cm
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6.

eBook
ＥＢ
6. Semiconductor material and device characterization. 3rd ed (: electronic bk)
Dieter K. Schroder
Published: [S.l.] : Wiley Online Library, [20--]  1 online resource (xv, 779 p.)
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Table of Contents: Read more
Preface to Third Edition
Resistivity / 1：
Introduction / 1.1：
Two-Point Versus Four-Point Probe / 1.2：
Wafer Mapping / 1.3：
Resistivity Profiling / 1.4：
Contactless Methods / 1.5：
Conductivity Type / 1.6：
Strengths and Weaknesses / 1.7：
Resistivity as a Function of Doping Density / Appendix 1.1：
Intrinsic Carrier Density / Appendix 1.2：
References
Problems
Review Questions
Carrier and Doping Density / 2：
Capacitance-Voltage (C-V) / 2.1：
Current-Voltage (I-V) / 2.3：
Measurement Errors and Precautions / 2.4：
Hall Effect / 2.5：
Optical Techniques / 2.6：
Secondary Ion Mass Spectrometry (SIMS) / 2.7：
Rutherford Backscattering (RBS) / 2.8：
Lateral Profiling / 2.9：
Parallel or Series Connection? / 2.10：
Circuit Conversion / Appendix 2.2：
Contact Resistance and Schottky Barriers / 3：
Metal-Semiconductor Contacts / 3.1：
Contact Resistance / 3.3：
Measurement Techniques / 3.4：
Schottky Barrier Height / 3.5：
Comparison of Methods / 3.6：
Effect of Parasitic Resistance / 3.7：
Alloys for Contacts to Semiconductors / Appendix 3.2：
Series Resistance, Channel Length and Width, and Threshold Voltage / 4：
PN Junction Diodes / 4.1：
Schottky Barrier Diodes / 4.3：
Solar Cells / 4.4：
Bipolar Junction Transistors / 4.5：
MOSFETS / 4.6：
MESFETS and MODFETS / 4.7：
Threshold Voltage / 4.8：
Pseudo MOSFET / 4.9：
Schottky Diode Current-Voltage Equation / 4.10：
Defects / 5：
Generation-Recombination Statistics / 5.1：
Capacitance Measurements / 5.3：
Current Measurements / 5.4：
Charge Measurements / 5.5：
Deep-Level Transient Spectroscopy (DLTS) / 5.6：
Thermally Stimulated Capacitance and Current / 5.7：
Positron Annihilation Spectroscopy (PAS) / 5.8：
Activation Energy and Capture Cross-Section / 5.9：
Time Constant Extraction / Appendix 5.2：
Si and GaAs Data / Appendix 5.3：
Oxide and Interface Trapped Charges, Oxide Thickness / 6：
Fixed, Oxide Trapped, and Mobile Oxide Charge / 6.1：
Interface Trapped Charge / 6.3：
Oxide Thickness / 6.4：
Capacitance Measurement Techniques / 6.5：
Effect of Chuck Capacitance and Leakage Current / Appendix 6.2：
Carrier Lifetimes / 7：
Recombination Lifetime/Surface Recombination Velocity / 7.1：
Generation Lifetime/Surface Generation Velocity / 7.3：
Recombination Lifetime-Optical Measurements / 7.4：
Recombination Lifetime-Electrical Measurements / 7.5：
Generation Lifetime-Electrical Measurements / 7.6：
Optical Excitation / 7.7：
Electrical Excitation / Appendix 7.2：
Mobility / 8：
Conductivity Mobility / 8.1：
Hall Effect and Mobility / 8.3：
Magnetoresistance Mobility / 8.4：
Time-of-Flight Drift Mobility / 8.5：
MOSFET Mobility / 8.6：
Contactless Mobility / 8.7：
Semiconductor Bulk Mobilities / 8.8：
Semiconductor Surface Mobilities / Appendix 8.2：
Effect of Channel Frequency Response / Appendix 8.3：
Effect of Interface Trapped Charge / Appendix 8.4：
Charge-based and Probe Characterization / 9：
Background / 9.1：
Surface Charging / 9.3：
The Kelvin Probe / 9.4：
Applications / 9.5：
Scanning Probe Microscopy (SPM / 9.6：
Optical Characterization / 9.7：
Optical Microscopy / 10.1：
Ellipsometry / 10.3：
Transmission / 10.4：
Reflection / 10.5：
Light Scattering / 10.6：
Modulation Spectroscopy / 10.7：
Line Width / 10.8：
Photoluminescence (PL / 10.9：
Raman Spectroscopy / 10.10：
Transmission Equations / 10.11：
Absorption Coefficients and Refractive Indices for SelectedSemiconductors / Appendix 10.2：
Chemical and Physical Characterization / 11：
Electron Beam Techniques / 11.1：
Ion Beam Techniques / 11.3：
X-Ray and Gamma-Ray Techniques / 11.4：
Selected Features of Some Analytical Techniques / 11.5：
Reliability and Failure Analysis / 12：
Failure Times and Acceleration Factors / 12.1：
Distribution Functions / 12.3：
Reliability Concerns / 12.4：
Failure Analysis Characterization Techniques / 12.5：
Gate Currents / 12.6：
List of Symbols / Appendix 1：
Abbreviations and Acronyms / Appendix 2：
Index
Preface to Third Edition
Resistivity / 1：
Introduction / 1.1：
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