| SiC Seeded Boule Growth / Valeri F. Tsvetkov; R.C. Glass; D. Henshall; D. Asbury; Calvin H. Carter Jr. |
| High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport / G. Augustine; H. McD. Hobgood; Vijay Balakrishna; Greg Dunne; R.H. Hopkins; R.N. Thomas; W.A. Doolittle; A. Rohatgi |
| Sublimation Growth of 50mm Diameter SiC Wafers / Adrian R. Powell; Shao Ping Wang; G. Fechko; George R. Brandes |
| Experimental Investigation of 4H-SiC Bulk Crystal Growth / K. Chourou; Mikhail Anikin; Jean Marie Bluet; V. Lauer; Gérard Guillot; Jean Camassel; Sandrine Juillaguet; O. Chaix-Pluchery; Michel Pons; R. Pons |
| Step Structures and Structural Defects in Bulk SiC Crystals Grown by Sublimation Method / Atsuto Okamoto; Naohiro Sugiyama; Toshihiko Tani; Nobuo Kamiya |
| Influence of the Growth Direction and Polytype on the Stacking Fault Generation in #945;-SiC / J. Takahashi; Noboru Ohtani; Masakazu Katsuno; S. Shinoyama |
| X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals / S. Milita; R. Pons; J. Baruchel; A. Mazuelas |
| Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals / Stephan G. Müller; Robert Eckstein; Wolfgang Hartung; Dieter Hofmann; M. Kölbl; Gerhard Pensl; Erwin Schmitt; Arnd Dietrich Weber; Albrecht Winnacker |
| The Structural Evolution of Seed Surfaces During the Initial Stages of Physical Vapor Transport SiC Growth / V.D. Heydemann; Gregory S. Rohrer; Edward M. Sanchez; Marek Skowronski |
| Defect Formation Mechanism of Bulk SiC / Makato Sasaki; Y. Nishio; Shigehiro Nishino; Shinichi Nakashima; Hiroshi Harima |
| Enlargement of SiC Crystals: Defect Formation at the Interfaces / Mikhail Anikin; Michel Pons; K. Chourou; O. Chaix-Pluchery; Jean Marie Bluet; V. Lauer; R. Pons |
| Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiC / Noboru Ohtani; Masakazu Katsuno; J. Takahashi; Hirokatsu Yashiro; M. Kanaya; S. Shinoyama |
| Optically Transparent 6H-Silicon Carbide / Andrey Bakin; Sergey I. Dorozhkin; A.S. Zubrilov; N.I. Kuznetsov; Yuri M. Tairov |
| Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification / Stephan G. Müller; Robert Eckstein; Dieter Hofmann; L. Kadinski; P. Kaufmann; M. Kölbl; Erwin Schmitt |
| Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum Container / Yu.E. Egorov; A.O. Galyukov; S.G. Gurevich; Yuri Makarov; E.N. Mokhov; M.G. Ramm; M.S. Ramm; A.D. Roenkov; A.S. Segal; Yu.A. Vodakov; A.N. Vorob'ev; A.I. Zhmakin |
| A Coupled Finite Element Model for the Sublimation Growth of SiC / P. Råback; Risto M. Nieminen; Rositza Yakimova; M. Tuominen; Erik Janzén |
| Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk Growth / M. Müller; Matthias Bickermann; Dieter Hofmann; Arnd Dietrich Weber; Albrecht Winnacker |
| Dissolution and Growth of Silicon Carbide Crystals in Melt-Solutions / V. Ivantsov; Vladimir Dmitriev |
| Sublimation Growth of Bulk #946;-SiC Crystals on (100) and (111) #946;-SiC Substrates / H.N. Jayatirtha; Michael G. Spencer |
| SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor / Albert A. Burk; Michael J. O'Loughlin; S.S. Mani |
| Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications / Roland Rupp; A. Wiedenhofer; Peter Friedrichs; Dethard Peters; Reinhold Schörner; Dietrich Stephani |
| Growth and Characterisation of SiC Power Device Material / Olof Kordina; Anne Henry; Erik Janzén |
| Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD / Alexsandre Ellison; Tsunenobu Kimoto; Ivan G. Ivanov; Qamar-ul Wahab; Anne Henry; Olof Kordina; Jian Hui Zhang; Carl G. Hemmingsson; Chun-Yuan Gu; M.R. Leys; Erik Janzén |
| Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition / Olof Kordina; Kenneth G. Irvine; Joseph J. Sumakeris; H.S. Kong; Michael J. Paisley; Calvin H. Carter Jr. |
| Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence / T. Yamamoto; Tsunenobu Kimoto; Hiroyuki Matsunami |
| Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC / L.B. Rowland; Albert A. Burk; C.D. Brandt |
| Boron Compensation of 6H Silicon Carbide / Michael S. Mazzola; Stephen E. Saddow; Adolf Schöner |
| CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane / Christer Hallin; Alexsandre Ellison; Ivan G. Ivanov; Anne Henry; Nguyen Tien Son; Erik Janzén |
| Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor / Frank Wischmeyer; D. Leidich; E. Niemann |
| Growth of 4H and 6H SiC Trenches and Around Stripe Mesas / Nils Nordell; S. Karlsson; Andrey O. Konstantinov |
| Planar 6H-SiC p-n Junctions Prepared by Selective Epitaxial Growth / Kai Christiansen; T. Dalibor; Reinhard Helbig; S. Christiansen; Horst P. Strunk |
| Epitaxial Growth of SiC on #945;-SiC Using Si2Cl6+C3H8+H2 System / Shigehiro Nishino; Toshiyuki Miyanagi; Y. Nishio |
| High Growth Rate of #945;-SiC by Sublimation Epitaxy / Mikael Syväjärvi; Rositza Yakimova; Mike F. MacMillan; M. Tuominen; A. Kakanakova-Georgieva; Carl G. Hemmingsson; Ivan G. Ivanov; Erik Janzén |
| The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique / A. Kakanakova-Georgieva; Mike F. MacMillan; Shigehiro Nishino; Rositza Yakimova; Erik Janzén |
| Domain Occurance in SiC Epitaxial Layers Grown by Sublimation / M. Tuominen; Rositza Yakimova; A. Kakanakova-Georgieva; Mike F. MacMillan; Mikael Syväjärvi; Erik Janzén |
| Epitaxy of High Quality SiC Layers by CST / Takeru Yoshida; Y. Nishio; S.K. Lilov; Shigehiro Nishino |
| Wetting Properties and Interfacial Energies in Liquid Phase Growth of #945;-SiC / Rositza Yakimova; Mikael Syväjärvi; Erik Janzén |
| High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase Epitaxy / S.V. Rendakova; V. Ivantsov; Vladimir Dmitriev |
| Thick Film SiC Epitaxy for 'Filling Up' Micropipes / I.I. Khlebnikov; V. Madangarli; M.A. Khan; Tangali S. Sudarshan |
| A New Radiation Heated 4 Inch LPCVD System for #946;-SiC Heteroepitaxy / H. Möller; W. Legner; G. Krötz |
| Epitaxial Growth in 3C-SiC without Carbonization Process Using 1,3-Disilabutane / Kyung Won Lee; K.-S. Yu; Joon Woo Bae; Y. Kim |
| Growth and Characterization of SiC Films on Large-Area Si Wafers by APCVD - Temperature Dependence / Chien-Hung Wu; A.J. Fleischman; Christian A. Zorman; Mehran Mehregany |
| CVD Growth Mechanism of 3C-SiC on Si Substrates / Yuuki Ishida; Tetsuo Takahashi; Hajime Okumura; Sadafumi Yoshida; Toshihiro Sekigawa |
| Growth of Epitaxial Cubic SiC Thin Films Using Single Source Precursors / Jin Hyo Boo; Soon Bok Lee; S.A. Ustin; W. Ho; H.P. Maruska; P.E. Norris; Il Ho Kim; C. Sung |
| Crystallinity of 3C-SiC Films Grown on Si Substrates / Kuniaki Yagi; Hiroyuki Nagasawa |
| Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111) Substrates / H.W. Shim; K.C. Kim; Y.H. Seo; Kee Suk Nahm; Eun Kyung Suh; H.J. Lee; Y.G. Hwang |
| The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film on Si Substrate / Y.H. Seo; K.C. Kim; H.W. Shim; Kee Suk Nahm; Eun Kyung Suh; H.J. Lee; Y.G. Hwang; D.-K. Kim; Byung Teak Lee |
| Study of Initial Stage of SiC Growth on Si(100) Surface by XPS, RHEED and SEM / T. Takaoka; Haruo Saito; Y. Igari; I. Kusunoki |
| Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si Substrates / Tetsuo Takahashi; Yuuki Ishida; Hajime Okumura; Sadafumi Yoshida; Toshihiro Sekigawa |
| Effect of Substrate Bias on 3C-SiC Deposition on Si by AC Plasma-Assisted CVD / Hideki Shimizu; M. Shiga |
| Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in Silicon / J.K.N. Lindner; W. Reiber; B. Stritzker |
| Formation and Prevention of Micropipes and Voids in CVD Carbonization Experiments on (100) Silicon / R. Scholz; U.M. Gösele; Frank Wischmeyer; E. Niemann |
| Fabrication of 3C-SiC on SiO2 Structures Using Wafer Bonding Techniques / Christian A. Zorman; K.N. Vinod; A.A. Yasseen; Mehran Mehregany |
| Growth Mode and Kinetics of Atmospheric Pressure Chemical Vapour Deposition of #946;-SiC on Si(100) Substrate / Gabriel Ferro; H. Vincent; Yves Monteil; Didier Chaussende; J. Bouix |
| Germanium as a Possible Surfactant for Growth of Beta Silicon Carbide on Silicon Substrates / S. Mitchell; Michael G. Spencer; K. Wongchotigul |
| Gas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary System / Tomoaki Hatayama; Takashi Fuyuki; Hiroyuki Matsunami |
| Heteroepitaxial Growth of SiC on Si by Gas Source MBE with Silacyclobutane / Jin Ming Chen; A.J. Steckl; Mark J. Loboda |
| Heteroepitaxial Growth of 3C-SiC on Surface-Structure-Controlled MBE Layer by Low-Pressure CVD / M. Uchida; M. Deguchi; Kazuhiko Takahashi; Makoto Kitabatake; M. Kitagawa |
| Formation of Pyramidal Pits at the Interface of 3C-SiC and Si(001) Substrates Grown by Gas Source MBE / Jan Philipp Schmidt-Ewig; T. Troffer; Kai Christiansen; S. Christiansen; Reinhard Helbig; Gerhard Pensl; Horst P. Strunk |
| Growth of SiC Layers on (111) Si by Solid Source Molecular Beam Epitaxy / J. Pezoldt; Thomas Stauden; Volker Cimalla; Gernot Ecke; Henry Romanus; G. Eichhorn |
| Improved Epitaxy of Cubic SiC Thin Films on Si(111) by Solid-Source MBE / Andreas Fissel; K. Pfennighaus; Ute Kaiser; J. Kräußlich; H. Hobert; Bernd Schröter; W. Richter |
| Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE / Ute Kaiser; P.D. Brown; A. Chuvilin; Igor I. Khodos; Andreas Fissel; W. Richter; A. Preston; Colin J. Humphreys |
| Electronic Properties of SiC Polytypes and Heterostructures / Friedhelm Bechstedt |
| Band Structure Interpretation of the Optical Transitions between Low-Lying Conduction Bands in n-Type Doped SiC Polytypes / Walter R.L. Lambrecht; Sukit Limpijumnong; Sergey N. Rashkeev; Benjamin Segall |
| Calculated Density of States and Carrier Concentration in 4H- and 6H-SiC / C. Persson; Ulf Lindefelt |
| Theoretical Studies on Defects in SiC / Peter Deák; Adam Gali; J. Miró; R. Gutierrez; A. Sieck; Thomas Frauenheim |
| An ab initio Study of Native Defects in Cubic SiC: Vacancies and Stacking Faults / A. Zywietz; P. Käckell; J. Furthmüller; Friedhelm Bechstedt |
| Calculation of Nonlinear Optical Susceptibilities for Different Polytypes of Silicon Carbide / B. Adolph; Friedhelm Bechstedt |
| Comparative Monte Carlo Study of Electron Transport in 3C, 4H and 6H Silicon Carbide / R. Mickevi#269;ius; Jian Hui Zhao |
| Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiC / Takahiro Kinoshita; Kohei M. Itoh; J. Muto; M. Schadt; Gerhard Pensl; K. Takeda |
| The Effects of Interfacial Dipoles on the Properties of SiC-Group III-Nitride Hetero-Structures / G. Lucovsky; H. Yang; G. Lüpke |
| Pressure-Dependent Dynamical and Dielectric Properties of GaN and AlN / K. Karch; J.-M. Wagner; H. Siegle; C. Thomsen; Friedhelm Bechstedt |
| Theoretical and Experimental Study of the Lattice-Dynamical Properties of Cubic GaN / H. Sterner; A. Schewiola; K. Karch; P. Pavone; Dieter Strauch; H. Siegle; G. Kaczmarczyk; L. Filippidis; C. Thomsen |
| Electronic States of BC2N Heterodiamond (111) Superlattices / Y. Tateyama; K. Kusakabe; T. Ogitsu; S. Tsuneyuki |
| From Precursor Atoms Towards Hetero-Phases: Strain-Dynamics Induced Carbon-Rich Si1-xCx Phases / György Vida; N. Moreaud; J. Calas; M. Averous |
| Large Unit Cell Superstructures on Hexagonal SiC-Sufaces Studied by LEED, AES and STM / Ulrich Starke; M. Franke; J. Bernhardt; J. Schardt; K. Reuter; K. Heinz |
| Surface Reconstructions of 6H-SiC(0001) and Surface-Structure-Controlled Epitaxial Growth / Makoto Kitabatake |
| Electronic and Atomic Structure of the C-Terminated 6H-SiC Surface / M. Hollering; B. Mattern; F. Maier; Lothar Ley; A.P.J. Stampfl; J. Xue; J.D. Riley; R.C.G. Leckey |
| Deposition of Cs on Graphitized 4H-SiC Surfaces / V. van Elsbergen; H. Nienhaus; Winfried Mönch |
| Theory of Si-Rich SiC Surfaces: Consequences for Epitaxial Growth / J. Furthmüller; P. Käckell; Friedhelm Bechstedt; Andreas Fissel; K. Pfennighaus; Bernd Schröter; W. Richter |
| Polarity Dependent Step Bunching and Structure of Hexagonal SiC Surfaces / J. Schardt; J. Bernhardt; M. Franke; Ulrich Starke; K. Heime |
| Collective Surface Excitations in 3C-SiC(100) / T. Balster; V.M. Polyakov; F.S. Tautz; H. Ibach; J.A. Schaefer |
| FTIR-ATR Analysis of SiC(000-1) and SiC(0001) Surfaces / Hidekazu Tsuchida; Isaho Kamata; Kunikaza Izumi |
| Polytype and Surface Characterization of Silicon Carbide Thin Films / Bernd Schröter; M. Kreuzberg; Andreas Fissel; K. Pfennighaus; W. Richter |
| Characterization of Mechanically Polished Surfaces of Single Crystalline 6H-SiC / M. Kanaya; Hirokatsu Yashiro; Noboru Ohtani; Masakazu Katsuno; J. Takahashi; S. Shinoyama |
| AFM Study of In Situ Etching of 4H and 6H SiC Substrates / S. Karlsson; Nils Nordell |
| Surface Morphology Improvement of SiC Epitaxy by Sacrificial Oxidation / C.J. Anthony; A.J. Pidduck; Michael J. Uren |
| The Formation of Super-Disolcation/Micropipe Complexes in 6H-SiC / J. Giocondi; Gregory S. Rohrer; Marek Skowronski; Vijay Balakrishna; G. Augustine; H. McD. Hobgood; R.H. Hopkins |
| High Resolution Photoemission Study of the 6H-SiC/SiO2 Interface / B. Mattern; M. Bassler; Gerhard Pensl; Lothar Ley |
| Combined Ab Initio Total Energy Density Functional Calculations and Scanning Tunneling Microscopy Experiments of the #946;-SiC(001) c(4x2) Surface / L. Douillard; F. Semond; V.Yu. Aristov; P. Soukiassian; Bernard Delley; A. Mayne; G. Dujardin; E. Wimmer |
| Angle-Resolved Photoemission Study of the #946;-SiC(100)-(2x1)-Surface / H. Hüsken; Bernd Schröter; W. Richter; P. Käckell; Friedhelm Bechstedt |
| Self-Organized One-Dimensional Si Atomic Chains on Cubic Silicon Carbide Surface / F. Semond; V.Yu. Aristov; L. Douillard; O. Fauchoux; P. Soukiassian; A. Mayne; G. Dujardin |
| High Resolution Photoemission Spectroscopy Using Synchrotron Radiation Study of the SiO2/#946;-SiC(100)3x2 Interface Composition / D. Dunham; P. Soukiassian; J.D. Denlinger; B.P. Tonner; E. Rothenberg |
| Raman Investigation of Stress Relaxation at the 3C-SiC/Si Interface / Jean Marie Bluet; L.A. Falkovsky; N. Planes; Jean Camassel |
| Extended Defects in SiC and GaN Semiconductors / P. Pirouz |
| Defect Characterization of Homo-Epitaxially Grown 6H-SiC on (0001) Silicon and (000-1) Carbon Faces / J. Stoemenos; Lea Di Cioccio; V. Papaioannou; D. David; C. Pudda |
| Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC / P.O.Å. Persson; Qamar-ul Wahab; L. Hultman; Nils Nordell; Adolf Schöner; K. Rottner; E. Olsson; Margareta K. Linnarsson |
| The Origin of Triangular Surface Defects in 4H-SiC CVD Epilayers / W.L. Zhou; P. Pirouz; J. Anthony Powell |
| Gaseous Etching for Characterization of Structural Defects in Silicon Carbide Single Crystals / J. Anthony Powell; David J. Larkin; Andrew J. Trunek |
| Equilibrium Growth Morphologies of SiC Polytypes / Stephan G. Müller; Robert Eckstein; R.F.P. Grimbergen; Dieter Hofmann; B. Rexer |
| Experimental Studies of Hollow-Core Screw Dislocations in 6H-SiC and 4H-SiC Single Crystals / W. Si; Michael Dudley; R.C. Glass; Calvin H. Carter Jr.; Valeri F. Tsvetkov |
| Structural Characterization of SiC Crystals Grown by Physical Vapor Transport / Edward M. Sanchez; V.D. Heydemann; Gregory S. Rohrer; Marek Skowronski; J. Solomon; Michael A. Capano; W.C. Mitchel |
| Investigation of Polymorphism and Estimation of Lattice Constants of SiC Epilayers by Four Circle X-Ray Diffraction / Henry Romanus; G. Teichert; Lothar Spieß |
| Site Identification of 6H-SiC Using RBS/Channeling Technique / Masataka Satoh; Katsutomo Okamoto; Y. Iwata; K. Kuriyama; M. Kanaya; Noboru Ohtani |
| Structural Characterization of 3C-SiC Epitaxially Grown on Si-On-Insulator / V. Papaioannou; Eleni Pavlidou; J. Stoemenos; W. Reichelt; E. Obermeier |
| Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman Scattering / Hiroshi Harima; Takahiro Hosoda; Shinichi Nakashima |
| Optical Properties of Silicon Carbide: Some Recent Developments / Robert P. Devaty; Wolfgang J. Choyke; S.G. Sridhara; L.L. Clemen; D.G. Nizhner; David J. Larkin; T. Troffer; Gerhard Pensl; Tsunenobu Kimoto; H.S. Kong |
| Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC / S.G. Sridhara; D.G. Nizhner; Robert P. Devaty; Wolfgang J. Choyke; T. Troffer; Gerhard Pensl; David J. Larkin; H.S. Kong |
| Phosphorus Four Particle Donor Bound Exciton Complex in 6H SiC / S.G. Sridhara; L.L. Clemen; D.G. Nizhner; Wolfgang J. Choyke; Robert P. Devaty; David J. Larkin |
| Some Aspects of the Photoluminescence and Raman Spectroscopy of (10-10)- and (11-20)-Oriented 4H and 6H Silicon Carbide / Ivan G. Ivanov; Christer Hallin; T. Egilsson; Anne Henry; Erik Janzén |
| The Neutral Silicon Vacancy in 6H and 4H SiC / E. Sörman; W.M. Chen; Nguyen Tien Son; Christer Hallin; J. Lennart Lindström; Bo Monemar; Erik Janzén |
| Bound Exciton Recombination in Electron Irradiated 4H-SiC / T. Egilsson; Anne Henry; Ivan G. Ivanov; J. Lennart Lindström; Erik Janzén |
| Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and Mapping / Michio Tajima; Y. Kumagaya; Toshitake Nakata; M. Inoue; A. Nakamura |
| Time Resolved PL Study of Multi Bound Excitons in 3C SiC / Peder Bergman; Erik Janzén; S.G. Sridhara; Wolfgang J. Choyke |
| Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress / Ivan G. Ivanov; Ulf Lindefelt; Anne Henry; T. Egilsson; Olof Kordina; Erik Janzén |
| DII Revisited in an Modern Guise - 6H and 4H SiC / S.G. Sridhara; D.G. Nizhner; Robert P. Devaty; Wolfgang J. Choyke; T. Dalibor; Gerhard Pensl; Tsunenobu Kimoto |
| Near Band-Gap Emission in V-Implanted and Annealed 4H-SiC / Anne Henry; T. Egilsson; Ivan G. Ivanov; Chris I. Harris; Susan Savage; Erik Janzén |
| Photoluminescence and Backscattering Characterization of 6H SiC Implanted with Erbium and Oxygen Ions / A. Kozanecki; C. Jeynes; Brian J. Sealy; W. Jantsch; S. Lanzerstorfer; W. Heiß; G. Prechtl |
| Luminescence Properties of Er Implanted Polycrystalline 3C SiC / S. Uekusa; K. Awahara; Mikito Kumagai |
| Measurement of High Field Electron Transport in Silicon Carbide / I.A. Khan; James A. Cooper |
| Ionization Rates and Critical Fields in 4H SiC Junction Devices / Andrey O. Konstantinov; Qamar-ul Wahab; Nils Nordell; Ulf Lindefelt |
| Measurement of the Hall Scattering Factor in 4H SiC Epilayers from 40K to 290K and up to Magnetic Fields of Nine Tesla / G. Rutsch; Robert P. Devaty; D.W. Langer; L.B. Rowland; Wolfgang J. Choyke |
| Electrical Conductivity of Single-Crystalline Bulk 6H-SiC and Epitaxial Layers of AlN in the Temperature Range 300-2300 K |
| Monitory Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique |
| Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport Parameters / Vytautas Grivickas; Jan Linnros; Augustinas Galeckas |
| Evaluation of Auger Recombination Rate in 4H-SiC / Augustinas Galeckas; Jan Linnros; Vytautas Grivickas; Ulf Lindefelt; Christer Hallin |
| Ground States of the Ionized Isoelectronic Ti Acceptor in SiC / T. Dalibor; Gerhard Pensl; Nils Nordell; Adolf Schöner; Wolfgang J. Choyke |
| Radiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiC / N. Achtziger; Joachim Grillenberger; W. Witthuhn |
| Deep Levels in SiC:V by High Temperature Transport Measurements / W.C. Mitchel; Ronald Perrin; Jonathan Goldstein; Matthew D. Roth; M. Ahoujja; S.R. Smith; A.O. Evwaraye; J.S. Solomon; G. Landis; Jason R. Jenny; H. McD. Hobgood; G. Augustine; Vijay Balakrishna |
| Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient Spectroscopy / M.B. Scott; James D. Scofield; Y.K. Yeo; R.L. Hengehold |
| Oxygen-Related Defect Centers in 4H Silicon Carbide / T. Dalibor; Gerhard Pensl; T. Yamamoto; Tsunenobu Kimoto; Hiroyuki Matsunami; S.G. Sridhara; D.G. Nizhner; Robert P. Devaty; Wolfgang J. Choyke |
| Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC / T. Troffer; Gerhard Pensl; Adolf Schöner; Anne Henry; Christer Hallin; Olof Kordina; Erik Janzén |
| Observation of Metastable Defect in Electron Irradiated 6H-SiC / Carl G. Hemmingsson; Nguyen Tien Son; Olof Kordina; J. Lennart Lindström; Erik Janzén |
| Electrically Active Defects in n-Type 4H- and 6H-SiC / J.P. Doyle; Lucjan Swad#378;ba; Bengt Gunnar Svensson |
| Phonon Spectrum of Band-to-Band Optical Transitions in 6H-SiC as Determined by Optical Admittance Spectroscopy / S.R. Smith; A.O. Evwaraye; W.C. Mitchel |
| Electrical and Transmission Electron Microscopy Characterisation of 4H-SiC Homoepitaxial Mesa Diodes / A. Czerwinski; Jacek Ratajczak; J. Katcki; A. Bakowski; Mietek Bakowski |
| High-Temperature Annealing of 6H-SiC Single Crystals and the Site-Competition Processes / S.I. Vlaskina; Y.P. Lee; V.E. Rodionov; Maria Kaminska |
| Electronic Structure of Acceptors in Silicon Carbide / P.G. Baranov |
| High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC / J. Schmidt; T. Matsumoto; O.G. Poluektov; A. van Duijn-Arnold; Toshiyuki Ikoma; P.G. Baranov; E.N. Mokhov |
| On the Identification of an Al Related Deep Centre in 4H-SiC - Self-Compensation in SiC? / B.K. Meyer; A. Hofstätter; P.G. Baranov |
| X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide / A. Hofstätter; B.K. Meyer; A. Scharmann; P.G. Baranov; Ivan V. Ilyin; E.N. Mokhov |
| Optically Detected Magnetic Resonance Studies of Non-Radiative Recombination Centres in 6H SiC / Nguyen Tien Son; Matthias Wagner; E. Sörman; W.M. Chen; Bo Monemar; Erik Janzén |
| Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies / Nguyen Tien Son; Alexsandre Ellison; Mike F. MacMillan; Olof Kordina; W.M. Chen; Bo Monemar; Erik Janzén |
| Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide Crystals / P.G. Baranov; Ivan V. Ilyin; E.N. Mokhov |
| Characterization of Defects in Electron Irradiated 6H-SiC by Positron Lifetime and Electron Spin Resonance / Atsuo Kawasuso; Hisayoshi Itoh; Dai Bum Cha; Sohei Okada |
| ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons / Dai Bum Cha; Hisayoshi Itoh; Norio Morishita; Atsuo Kawasuso; Takeshi Ohshima; Yuichi Watanabe; J. Ko; Kin Kiong Lee; Isamu Nashiyama |
| Distribution of Paramagnetic Defects in 3C-SiC Epitaxial Films Grown by LPCVD Method with Alternate Gas Supply / Tomio Izumi; K. Kobayashi; E. Hirosawa; Takamitsu Kawahara; Hiroyuki Nagasawa |
| Experimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiC / Stephan G. Müller; Robert Eckstein; J. Fricke; Dieter Hofmann; R. Hofmann; R. Horn; H. Mehling; O. Nilsson |
| Deformation of Monocrystalline 6H-SiC / A.V. Samant; W.L. Zhou; P. Pirouz |
| Measurement of the Thermal Conductivity of Thin #946;-SiC Films between 80 K and 600 K / E. Jansen; R. Ziermann; E. Obermeier; G. Krötz; Ch. Wagner |
| Spatial Uniformity of the Mechanical Properties of 3C-SiC Films Grown on 4-Inch Si Wafers as a Function of Film Growth Conditions / K. Chandra; Christian A. Zorman; Mehran Mehregany |
| The Measurement of the Thickness of Thin SiC Layers on Silicon / Volker Cimalla; J. Scheiner; Gernot Ecke; M. Friedrich; R. Goldhahn; D.R.T. Zahn; J. Pezoldt |
| Thickness Contour Mapping of SiC Epi-Films on SiC Substrates / Mike F. MacMillan; P.O. Narfgren; Anne Henry; Erik Janzén |
| Infrared Reflectance of Extremely Thin AlN Epi-Films Deposited on SiC Substrates / Mike F. MacMillan; Urban Forsberg; P.O.Å. Persson; L. Hultman; Erik Janzén |
| Cathodoluminescence of Defect Regions in SiC Epi-Films / Mike F. MacMillan; L. Hultman; Christer Hallin; Ivan G. Ivanov; Anne Henry; Erik Janzén; S.A. Galloway |
| Contactless Measurement of the Thermal Conductivity of Thin SiC Layers / S. Rohmfeld; Martin Hundhausen; Lothar Ley |
| Cross-Sectional Micro-Raman Spectroscopy: A Tool for Structural Investigations of Thin Polytypic SiC Layers / T. Werninghaus; D.R.T. Zahn; R.A. Yankov; A. Mücklich; J. Pezoldt |
| A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors / V. Madangarli; Tangali S. Sudarshan |
| Raman Determination of Stresses and Strains in 3C-SiC Films Grown on 6-Inch Si Substrates / C. Hagiwara; Kohei M. Itoh; J. Muto; Hiroyuki Nagasawa; Kuniaki Yagi; Hiroshi Harima; K. Mizoguchi; Shinichi Nakashima |
| Conductivity Control of SiC by In-Situ Doping and Ion Implantation / Tsunenobu Kimoto; A. Itoh; N. Inoue; O. Takemura; T. Yamamoto; T. Nakajima; Hiroyuki Matsunami |
| Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy / Thomas Frank; T. Troffer; Gerhard Pensl; Nils Nordell; S. Karlsson; Adolf Schöner |
| Coimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiC / Hisayoshi Itoh; T. Troffer; Gerhard Pensl |
| Electrical Characterization of p-Type 6H-SiC Layers Created by C and Al Co-implantation / Kiyoshi Tone; S.R. Weiner; Jian Hui Zhao |
| Effects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical Techniques / Zhe Chuan Feng; Ian T. Ferguson; R.A. Stall; K. Li; Y. Shi; H. Singh; Kiyoshi Tone; Jian Hui Zhao; A.T.S. Wee; K.L. Tan; F. Adar; B. Lenain |
| Energy Order Effect of Aluminium Multiple Implantation in 6H-SiC / Laurent Ottaviani; Erwan Morvan; Marie Laure Locatelli; Philippe Godignon; Jean-Pierre Chante |
| Implantation of Al and B Acceptors into Alpha-SiC and pn Junction Diodes / O. Takemura; Tsunenobu Kimoto; Hiroyuki Matsunami; Toshitake Nakata; Masanori Watanabe; M. Inoue |
| Electrical Activation of B Implant in 6H-SiC / E. Valcheva; T. Paskova; I.S. Ivanov; Rositza Yakimova; Qamar-ul Wahab; Susan Savage; Nils Nordell; Chris I. Harris |
| Post-Implantation Annealing of Aluminium in 6H-SiC / Laurent Ottaviani; Dominique Planson; Marie Laure Locatelli; Jean-Pierre Chante; B. Canut; S. Ramos |
| The Characterization of SiC Hot-Implanted with Ga + / Yasuhito Tanaka; Naoto Kobayashi; Mitsuru Hasegawa; Sadafumi Yoshida; Yuuki Ishida; T. Nishijima; N. Hayashi |
| Ion Implantation Doping in SiC and its Device Applications / Mulpuri V. Rao; J. Gardner; Arthur H. Edwards; N. Papanicolaou; G. Kelner; O.W. Holland; Mario Ghezzo; James W. Kretchmer |
| Hot-Implantation of Phosphorus Ions into 6H-SiC / L. Bouwhuis; Takeshi Ohshima; Hisayoshi Itoh; Y. Aoki; Masahito Yoshikawa; Isamu Nashiyama; Motohiro Iwami |
| Raman, Low Temperature Photoluminescence and Transport Investigation of N-Implanted 6H-SiC / P. Thomas; Sylvie Contreras; Sandrine Juillaguet; Jean-Louis Robert; Jean Camassel; J. Gimbert; Thierry Billon; C. Jaussaud |
| Investigation of Ion-Impantation Induced Damage in 6H-SiC by RSB/C and PAS / H. Wirth; W. Anwand; Gerhard Brauer; M. Voelskow; D. Panknin; Wolfgang Skorupa; Paul G. Coleman |
| Analysis of Aluminium Ion Implantation Damage into 6H-SiC Epilayers / Narcis Mestres; M. Ben El Mekki; F.J. Campos; Jordi Pascual; Erwan Morvan; Philippe Godignon; José Millan; Giorgio Lulli |
| Stoichiometric Disturbances in Ion Implanted Silicon Carbide / Erwan Morvan; Josep Montserrat; Jose Rebollo; D. Flores; Xavier Jordá; Marie Laure Locatelli; Laurent Ottaviani |
| 6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering / T. Paskova; E. Valcheva; Ivan G. Ivanov; Rositza Yakimova; Susan Savage; Nils Nordell; Chris I. Harris |
| Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation / Takeshi Ohshima; Akira Uedono; Hisayoshi Itoh; L. Bouwhuis; Ryoichi Suzuki; Toshiyuki Ohdaira; Y. Aoki; Masahito Yoshikawa; Tomohisa Mikado; Hajime Okumura; Sadafumi Yoshida; Shoichiro Tanigawa; Isamu Nashiyama |
| Effect of Hot Isostatic Press Annealing for Ion-Implanted Silicon Carbide / Yoshitaka Hirabayashi; M. Furuya; K. Hirai; Hideto Takano; K. Yabuta; Mikito Kumagai |
| Ion Beam Synthesis: A Novel Method of Producing (SiC)1-x(AIN)x Layers / R.A. Yankov; W. Fukarek; M. Voelskow; J. Pezoldt; Wolfgang Skorupa |
| A Computational Model for the Formation of (SiC)1-x(AIN)x Structures by Hot, High-Dose N+ and Al+ Co-Implants in 6H-SiC / Yu.V. Truschin; R.A. Yankov; V.S. Kharlamov; D.V. Kulikov; D.N. Tsigankov; U. Kreissig; M. Voelskow; J. Pezoldt; Wolfgang Skorupa |
| Deuterium Incorpoation in Acceptor Doped Epitaxial Layers of 6H-SiC / Margareta K. Linnarsson; Martin S. Janson; Adolf Schöner; Nils Nordell; S. Karlsson; Bengt Gunnar Svensson |
| Silicon Carbide on Insulator Formation by the Smart CUT® Process / Lea Di Cioccio; Y. Le Tiec; C. Jaussaud; E. Hugonnard-Bruyère; M. Bruel |
| Delamination of Thin Layers in H+ Implanted Silicon Carbide / Tohru Hara; Y. Kakizaki; Hisao Tanaka; M. Inoue; K. Kajiyama; T. Yoneda; Kohei Sekine; K. Masao |
| Metal Disilicide Contacts to 6H-SiC / J. Kriz; T. Scholz; K. Gottfried; J. Leibelt; C. Kaufmann; T. Gessner |
| Formation of Tungsten Ohmic Contact on n-Type 6H-SiC by Pulsed Laser Processes / Koichi Nakashima; Osamu Eryu; T. Kume; Toshitake Nakata; M. Inoue |
| Laser Alloying for Ohmic Contacts on SiC at Room Temperature / Yoshio Ota; Yasushi Ikeda; Makoto Kitabatake |
| Thermostable Ohmic Contacts on p-Type SiC / Liliana Kassamakova; Roumen Kakanakov; Nils Nordell; Susan Savage |
| Ohmic Contacts to p-Type SiC with Improved Thermal Stability / Shi Zhong Liu; James D. Scofield |
| A High Temperature Stable Metallization Scheme for SiC-Technology Operating at 400°C in Air / K. Gottfried; H. Fritsche; J. Kriz; J. Leibelt; C. Kaufmann; F. Rudolf; T. Gessner |
| Phase Formation Sequence of Nickel Silicides from Rapid Thermal Annealing of Ni on 4H-SiC / Lynnette D. Madsen; Erik B. Svedberg; H.H. Radamson; Christer Hallin; B. Hjörvarsson; C. Cabral; J.L. Jordan-Sweet; C. Lavoie |
| Thermal Stability of Sputtered TiN as Metal Gate on 4H-SiC / Erik Danielsson; Chris I. Harris; Carl-Mikael Zetterling; Mikael Östling |
| Schottky Barrier Height in Metal-SiC Contact - New Approach to Modelling / Pavel A. Ivanov; K.I. Ignat'ev |
| Nanometer-Scale Investigation of Schottky Contacts and Conduction Band Structure on 4H-, 6H- and 15R-SiC Using Ballistic Electron Emission Microscopy / Hyoung Jin Im; B. Kaczer; J.P. Pelz; Jin Ming Chen; Wolfgang J. Choyke |
| Physical and Electrical Characterization of WN Schottky Contacts on 4H-SiC / Olivier Noblanc; C. Arnodof; S. Cassette; Christian Brylinski; A. Kakanakova-Georgieva; Ts. Marinova; Liliana Kassamakova; R. Kabanakov; Béla Pécz; A. Sulyok; György Z. Radnóczi |
| Sputter-Etching as a Surface Preparation Technique for Schottky Contacts / Shin Ichi Kinouchi; Hiroshi Sugimoto; Yoichiro Tarui; Kenichi Ohtsuka; Tetsuya Takami; Tatsuo Ozeki |
| Mechanism of Reactive Ion Etching of 6H-SiC in CHF3/O2 Gas Mixtures / N. Sieber; Jürgen Ristein; Lothar Ley |
| Fast and Anisotropic Reactive Ion Etching of 4H and 6H SiC in NF3 / V. Saxena; A.J. Steckl |
| Inductively Coupled Plasma Etching of SiC for Power Switching Device Fabrication / Li Hui Cao; B. Li; Jian Hui Zhao |
| Etching Kinetics of #945;-SiC Single Crystals by Molten KOH / Masakazu Katsuno; Noboru Ohtani; J. Takahashi; Hirokatsu Yashiro; M. Kanaya; S. Shinoyama |
| Deep States in SiO2/p-Type 4H-SiC Interface / Hiroshi Yano; N. Inoue; Tsunenobu Kimoto; Hiroyuki Matsunami |
| Effects of the Cooling-Off Condition on the Oxidation Process in 6H-SiC / Katsunori Ueno |
| Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-SiC / J. Campi; Y. Shi; Yan Bin Luo; Feng Yan; Young Kook Lee; Jian Hui Zhao |
| Low Interface State Density Oxides on P-Type SiC / Lori A. Lipkin; D.B. Slater, Jr.; John W. Palmour |
| Observation of Carbon Clusters at the 4H-SiC/SiO2 Interface / Valeri V. Afanas'ev; Andre Stesmans; Chris I. Harris |
| Interface State Density at Implanted 6H SiC/SiO2 MOS Structures / M. Bassler; Valeri V. Afanas'ev; Gerhard Pensl |
| Electrical Properties and Reliability of Vapor Jet Deposited Oxide on SiC / Xie Wen Wang; Yasutaka Takahashi; T.P. Ma; G.J. Cui; T. Tamagawa; B. Halpern; J.J. Schmitt |
| Improving SiO2 Grown on P-Type 4H-SiC by NO Annealing / H.-F. Li; Sima Dimitrijev; H.B. Harrison; D. Sweatman; P.T. Tanner |
| Rapid Anodic Oxidation of 6H-SiC / Yuri I. Khlebnikov; V. Madangarli; M.A. Khan; Tangali S. Sudarshan |
| Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures / Carl-Mikael Zetterling; Mikael Östling; Chris I. Harris; Nils Nordell; K. Wongchotigul; Michael G. Spencer |
| Metal-Nitride-Semiconductor Capacitors on 6H-SiC / Stefan Berberich; Philippe Godignon; José Millan; Dominique Planson; H.L. Hartnagel; A. Senes |
| Surface Micromachining of Polycrystalline SiC Deposited on SiO2 by APCVD / A.J. Fleischman; X. Wei; Christian A. Zorman; Mehran Mehregany |
| Behaviour of Polycrystalline SiC and Si Surface-Micromachined Lateral Resonant Structures at Elevated Temperatures / A.J. Fleischman; S. Roy; Christian A. Zorman; Mehran Mehregany |
| Recent Advances in SiC Power Devices / James A. Cooper; M.R. Melloch; J.M. Woodall; J. Spitz; K.J. Schoen; Jason Henning |
| Vital Issues for SiC Power Devices / Kazukuni Hara |
| Silicon Carbide High Frequency Devices / C.E. Weitzel |
| Wide Dynamic Range RF Mixers Using Wide-Bandgap Semiconductors / C. Fazi; Philip G. Neudeck |
| Electrothermal Simulation of 4H-SiC Power Devices / Nicolas G. Wright; D.J. Morrison; C. Mark Johnson; Anthony G. O'Neill |
| High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers / Tsunenobu Kimoto; Qamar-ul Wahab; Alexsandre Ellison; Urban Forsberg; M. Tuominen; Rositza Yakimova; Anne Henry; Erik Janzén |
| 6H-SiC Schottky Diode Edge Terminated Using Amorphous SiC by Sputtering Method / K. Matsumoto; Y. Chen; J. Kuzmik; Shigehiro Nishino |
| Effect of Surface Preparation and Thermal Anneal on Electrical Characteristics of 4H-SiC Schottky Barrier Diodes / Dev Alok; Richard Egloff; Emil Arnold |
| High Voltage Schottky Barrier Diodes on P-Type 4H and 6H-SiC / R. Raghunathan; B.J. Baliga |
| High Voltage 4H SiC Rectifiers Using Pt and Ni Metallization |
| Medici Simulation of 6H-SiC Oxide Ramp Profile Schottky Structure / Gheorghe Brezeanu; J. Fernandez; José Millan; M. Badila; G. Dilimot |
| A Dual-Metal-Trench Schottky Pinch-Rectifier in 4H SiC / K.J. Schoen; Jason Henning; J.M. Woodall; James A. Cooper; M.R. Melloch |
| Characterization of Power MESFETs on 4h-SiC Conductive and Semi-Insulating Wafers / Olivier Noblanc; C. Arnodof; E. Chartier; Christian Brylinski |
| Silicon Carbide MESFET's for High-Power S-Band Applications / S.T. Allen; R.A. Sadler; T.S. Alcorn; Joseph J. Sumakeris; R.C. Glass; Calvin H. Carter Jr.; John W. Palmour |
| Temperature Dependent Small- and Large-Signal Performance of 4H-SiC MESFET's / K. Moore; M. Bhatnagar; C. Weitzel; L. Pond; T. Gehoski; T. Chatham |
| Voltage Handling Capability and Microwave Performance of a 4H-SiC MESFET - A Simulation Study / V. Khemka; T. Paul Chow; Ronald J. Gutmann |
| Evaluating the Three Common SiC Polytypes for MESFET Applications / M. Roschke; F. Schwierz; G. Paasch; D. Schipanski |
| Effect of Device Temperature on RF FET Power Density / C. Weitzel; L. Pond; K. Moore; M. Bhatnagar |
| Theoretical Investigation of the Electrical Behavior of SiC MESFETs for Microwave Power Amplification / F. Schwierz; M. Roschke; J.J. Liou; G. Paasch |
| MESFETs and MOSFETs on Hydrogen-Terminated Diamond Surfaces / K. Tsugawa; A. Hokazono; Hiroshi Noda; K. Kitatani; Koichiro Morita; Hiroshi Kawarada |
| On the Interpretation of High-Frequency Capacitance Data of SiC MOS Structures: The Effect of Thermal Non-Equilibrium / M. Sadeghi; B. Liss; E.Ö. Sveinbjörnsson; O. Engström |
| Charge Pumping Measurements on SiC MOSFETs / Charles Scozzie; J.M. McGarrity |
| 1400 V 4H-SiC Power MOSFETs / Anant K. Agarwal; Jeff B. Casady; L.B. Rowland; W.F. Valek; C.D. Brandt |
| High Voltage Planar 6H-SiC ACCUFET / P.M. Shenoy; B.J. Baliga |
| Inversion Layer Mobility in SiC MOSFETs / S. Sridevan; B.J. Baliga |
| Dependence of Channel Mobility on the Surface Step in Orientation in Planar 6H-SiC MOSFETs / Sigo Scharnholz; E. Stein von Kamienski; A. Gölz; C. Leonhard; H. Kurz |
| High-Voltage (2.6 kV) Lateral DMOSFETs in 4H-SiC / J. Spitz; M.R. Melloch; James A. Cooper; Michael A. Capano |
| Impact Ionization in 6H-SiC MOSFETs / Edwige Bano; Thierry Ouisse; Sigo Scharnholz; A. Gölz |
| Interface States and Field-Effect Mobility in 6H-SiC MOS Transistors / Emil Arnold; Nudjarin Ramungul; T. Paul Chow; Mario Ghezzo |
| Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays / Masahito Yoshikawa; K. Saitoh; Takeshi Ohshima; Hisayoshi Itoh; Isamu Nashiyama; Yasutaka Takahashi; K. Ohnishi; Hajime Okumura; Sadafumi Yoshida |
| Differences between Interfacial Bonding Chemistry at SiC-SiO2 Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature Conventional Thermal Oxidation / G. Lucovsky; Hideaki Niimi |
| Fast Generation-Recombination Channels due to Epitaxial Defects in SiC Metal-Oxide-Semiconductor Devices / Andrey O. Konstantinov; Qamar-ul Wahab; Christer Hallin; Chris I. Harris; Béla Pécz |
| 6H-SiC MOS Capacitors on Sloped Surfaces: Realisation, Characterisation and Electrical Results / Frédéric Lanois; Dominique Planson; P. Lassagne; Christophe Raynaud; Edwige Bano |
| Computer Model Simulation of SiC Diode Reverse-Bias Instabilities due to Deep Energy Impurity Levels / R.P. Joshi; C. Fazi |
| Nanosecond Risetime Pulse Characterization of SiC p+n Junction Diode Breakdown and Switching Properties / Philip G. Neudeck; C. Fazi |
| Reverse Recovery and Avalanche Injection in High Voltage SiC PIN Diodes / Martin Domeij; Bo Breitholtz; Jan Linnros; Mikael Östling |
| Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes / S. Ortolland; Marie Laure Locatelli; Dominique Planson; Jean-Pierre Chante; A. Senes |
| Beryllium-Implanted 6H-SiC P+N Junctions / Nudjarin Ramungul; Yan Jun Zheng; R. Patel; V. Khemka; T. Paul Chow |
| Investigation of Excess Carrier Distributions in 4H-SiC Power Diodes under Static Conditions and Turn-On / O. Tornblad; Augustinas Galeckas; Jan Linnros; Bo Breitholtz; Ulf Lindefelt |
| SiC Merged p-n/Schottky Rectifiers for High Voltage Applications / R. Held; N. Kaminski; E. Niemann |
| Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC / Fanny Dahlquist; Carl-Mikael Zetterling; Mikael Östling; K. Rottner |
| Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform / Nudjarin Ramungul; V. Khemka; T. Paul Chow; Mario Ghezzo; James W. Kretchmer |
| 4H-SiC Gate Turn-Off (GTO) Thyristor Development / Jeff B. Casady; Anant K. Agarwal; L.B. Rowland; R.R. Siergiej; S. Seshadri; S. Mani; J. Barrows; D. Piccone; P.A. Sanger; C.D. Brandt |
| Punch-Through Behaviour of Wide Bandgap Materials (with Example in 6H-SiC) and its Benefit to JFETs / N. Kaminski; S.T. Sheppard; E. Niemann |
| High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC / S.T. Sheppard; V. Lauer; W. Wondrak; E. Niemann |
| SiC Surface Engineering for High Voltage JFET Applications / Pavel A. Ivanov; O.I. Kon'kov; Andrey O. Konstantinov; V.N. Panteleev; Tat'yana P. Samsonova; Nils Nordell; S. Karlsson; Chris I. Harris |
| Electrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction Transistor / T. Iwasaki; T. Oono; Katsunori Asano; Yoshitaka Sugawara; Tsutomu Yatsuo |
| Studies of the Ambient Dependent Inversion of Catalytic Metal - Oxide - Silicon Carbide Devices Based on 6H- and 4H-SiC Material / Peter Tobias; A. Baranzahi; Ingemar Lundström; Adolf Schöner; K. Rottner; S. Karlsson; P. Mårtensson; Anita Lloyd Spetz |
| SiC-Based Schottky Diode Gas Sensors / Gary W. Hunter; Philip G. Neudeck; Liang Yu Chen; D. Knight; C.C. Liu; Q.H. Wu |
| Electrical Characterization of Chemical Sensors Based on Catalytic Metal Gate - Silicon Carbide Schottky Diodes / Peter Tobias; Shinji Nakagomi; A. Baranzahi; R. Zhu; Ingemar Lundström; P. Mårtensson; Anita Lloyd Spetz |
| High Temperature Piezoresistive #946;-SiC-on-SOI Pressure Sensor for Combustion Engines / J. von Berg; R. Ziermann; W. Reichert; E. Obermeier; M. Eickhoff; G. Krötz; U. Thoma; Th. Boltshauser; C. Cavalloni; J.P. Nendza |
| Growth of Bulk GaN by Sublimation Method / S. Sakai; H. Sato; T. Sugahara; Y. Naoi; S. Kurai; Kenya Yamashita; S. Tottori; M. Hao; Keiji Wada; Shigehiro Nishino |
| Growth and Characterization of Thin Films and Patterned Substrates of III-V Nitrides on SiC (0001) Substrates / Robert F. Davis; M.D. Bremser; O.H. Nam; T.S. Zheleva; W.G. Perry; B.L. Ward; Robert J. Nemanich |
| Heteroepitaxy of Group III Nitrides for Device Applications / Hiroshi Amano; T. Takeuchi; Hiroshi Sakai; S. Yamaguchi; C. Wetzel; Isamu Akasaki |
| HVPE GaN and AIGaN 'Substrates' for Homoepitaxy / Yu.V. Melnik; A.E. Nikolaev; S. Stepanov; I. Kikitina; Konstantin Vassilevski; A. Ankudinov; Yu. Musikhin; Vladimir Dmitriev |
| Some Features of a Nucleation Layer Growth Process and its Influence on the GaN Epilayer Quality / W.V. Lundin; A.S. Usikov; B.V. Pushnyi; U.I. Ushakov; M.V. Stepanov; N.M. Shmidt; A.V. Sakharov; Yu.M. Zadiranov; S.M. Suturin; V. Busov |
| Formation of GaN Nano-Column Structure by Nitridation / A. Hashimoto; T. Motiduki; H. Wada; Atsushi Yamamoto |
| Growth of High Quality AIN Epitaxial Films by Hot-Wall Chemical Vapour Deposition / Urban Forsberg; Jens Birch; Mike F. MacMillan; P.O.Å. Persson; L. Hultman; Erik Janzén |
| Growth of Aluminium Nitride with Superior Optical and Morphological Properties / K. Wongchotigul; S. Wilson; C. Dickens; X. Tang; Michael G. Spencer |
| Monomethylsilane as a New Dopant Precursor for n-Type GaN Grown by MOVPE / Kazuyoshi Tomita; Kenji Itoh; Tetsu Kachi; Hiroshi Tadano |
| Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AIN Buffer Layers / A. Strittmatter; A. Krost; K. Schatke; Y. Iseri; J. Bläsing; J. Christen |
| Optical Properties of GaN Films Grown on SiC/Si / J. Devrajan; A.J. Steckl; C.A. Tran; R.A. Stall |
| Modeling of the Incorporation of Aluminium in Ga1-xAlxM (M=As or N) Alloys Grown by MOCVD / S. Ruffenach-Clur; O. Briot; Bogim Gil; R.L. Aulombard |
| MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells / S. Keller; F. Cabané; M.S. Minsky; Xing Hui Wu; M.P. Mack; James S. Speck; E. Hu; L.A. Coldren; Umesh K. Mishra; Steven P. DenBaars |
| MBE Growth of III-V Nitride Thin Films and Quantum Well Structures / M.A.L. Johnson; N. El-Masry; J.W. Cook Jr.; J.F. Schetzina |
| Surface Reconstruction and As Surfactant Effects on MBE-Grown GaN Epilayers / Hajime Okumura; H. Hamaguchi; Kazushi Ohta; G. Feuillet; Krishnan Balakrishnan; Yuuki Ishida; Shigefusa F. Chichibu; Hachiro Nakanishi; Takao Nagatomo; Sadafumi Yoshida |
| An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN / B. Schöttker; J. Kühler; Donat J. As; D. Schikora; K. Lischka |
| Elaboration of III-V Nitrides Quantum Dots in Molecular Beam Epitaxy / B. Daudin; F. Widmann; G. Feuillet; Y. Samson; J.-L. Rouvière; N. Pelekanos |
| Growth of AIN on 6H- and 4H-SiC by Gas-Source Molecular Beam Epitaxy / K. Järrendahl; S.A. Smith; T.S. Zheleva; R.S. Kern; Robert F. Davis |
| Molecular Beam Epitaxy Growth and Characterisation of GaAs1-xNxLayers / J.V. Thordson; O. Zsebök; Ulf Södervall; T.G. Andersson |
| Effect of Elastic Strain on Growth of Ternary Group-III Nitride Compounds / S.Yu. Karpov; Yuri Makarov; M.S. Ramm |
| Influence of Activated Nitrogen on Plasma Assisted MBE Growth of GaN / U. Birkle; C. Thomas; M. Fehrer; S. Einfeldt; H. Heinke; D. Hommel |
| Surface Reconstruction and MBE Growth of Cubic GaN on (001) GaAs: A Total Energy Study / J.L.F. da Silva; R. Enderlein; L.M.R. Scolfaro; J.R. Leite; A. Tabata; K. Lischka; D. Schikora; Friedhelm Bechstedt |
| Growth and Characterization of High Quality Epitaxial GaN on ZnO(0001) by Reactive Molecular Epitaxy / F. Hamdani; M. Yeadon; David John Smith; H. Tang; W. Kim; A. Salvador; A.E. Botchkarev; J. Murray Gibson; Hadis Morkoç |
| Low Temperature Growth of Gallium Nitride on Quartz and Sapphire Substrates / E.M. Goldys; M.J. Paterson; H.Y. Zuo; T.L. Tansley |
| STM Observation of Initial Nitridation Process of Ga on Si Substrates / Y. Nakada; Hajime Okumura |
| Nitridation of GaAs(100) Wafers for the Preparation of Zincblende-Structure Thick GaN Layers / Atsushi Yamamoto; T. Shin-ya; Y. Yamauchi; A. Hashimoto |
| Magnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates / T.S. Cheng; C.T. Foxon; N.J. Jeffs; D.J. Dewsnip; L.B. Flannery; J.W. Orton; I. Harrison; S.V. Novikov; B.Ya. Ber; Yu.A. Kudriavtsev |
| MBE Growth of Device-Quality Cubic GaN on Atomically Flat (001) GaAs Prepared by Atomic-Hydrogen Treatment at High Temperatures / Akira Yoshikawa; Zuo Xiang Qin; H. Nagano; Y. Sugure; A.W. Jia; M. Kobayashi; Y. Kato; Kazuhiko Takahashi |
| Reactive UHV Sputtering and Structural Characterization of Epitaxial AlN/6H-SiC(0001) Thin Films / Sukkaneste Tungasmita; Jens Birch; L. Hultman; Erik Janzén; J.-E. Sundgren |
| Magnetron Sputter Epitaxy of Gallium Nitride on (0001) Sapphire / J.B. Webb; D. Northcott; S. Charbonneau; Fan Yang; D.J. Lockwood; O. Malvezin; P. Singh; John Corbett |
| Structural and Optical Properties of GaN Layers Directly Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy / B. Yang; O. Brandt; Y.G. Zhang; A.Z. Li; B. Jenichen; G. Paris; K. Ploog |
| Transmission Electron Microscopy Study of GaN on SiC on SIMOX Grown by Metalorganic Chemical Vapor Deposition / W.L. Zhou; P. Pirouz; F. Namavar; P.C. Colter; Murugesu Yoganathan; M.W. Leksono; J.I. Pankove |
| AlN Deposition by OMVPE and PLD Used as an Encapsulate for Ion Implanted SiC / Kenneth A. Jones; K. Xie; D.W. Eckart; M.C. Wood; V. Talyansky; R.D. Vispute; T. Venkatesan; K. Wongchotigul; Michael G. Spencer |
| The Atomic Structure of Prismatic Planar Defects in GaN/AlN Grown over Silicon Carbide and Sapphire Substrates / Gerard Nouet; Philippe Vermaut; V. Potin; Piere Ruterana; A. Salvador; Hadis Morkoç |
| Surface Defects in GaN and AlxGa1-xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase Epitaxy / Min Chul Shin; A.Y. Polyakov; Marek Skowronski; Gregory S. Rohrer; R.G. Wilson |
| Structural Characterisation of GaN Layers on Sapphire Grown by MOCVD / Béla Pécz; M.A. di Forte-Poisson; L. Tóth; György Z. Radnóczi |
| Excitonic Fine Structure and High Density Effects in GaN / Andreas Hoffmann; L. Eckey |
| Optical Transitions and Exciton Binding Energies in GaN Grown along Various Crystallographic Orientations / Bogim Gil; O. Briot; R.L. Aulombard; Shun-ichi Nakamura |
| Free Exciton Recombination in Tensile Strained GaN Grown on GaAs / R. Goldhahn; S. Shokhovets; Henry Romanus; T.S. Cheng; C.T. Foxon |
| Exciton Dynamics in Homoepitaxial GaN / Bo Monemar; Peder Bergman; Ivan G. Ivanov; Jacek M. Baranowski; K. Pakula; I. Grzegory; Katsushige Tsuno |
| Exciton Dynamics of Thick GaN Epilayers Deposited by MOVPE on Al2O3 / J. Allègre; P. Lefebvre; Jean Camassel; B. Beaumont; Pierre Gibart |
| Excitonic Quantum Efficiency of GaN / A. Göldner; L. Eckey; Andreas Hoffmann; Bogim Gil; O. Briot |
| Optical Absorption and Excitation Spectroscopy on GaInN/GaN Double Heterostructures and Quantum Wells / A. Hangleiter; S. Heppel; J. Off; A. Sohmer; F. Scholz |
| Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties / J. Holst; M. Straßburg; N.N. Ledentsov; L. Eckey; A. Göldner; Andreas Hoffmann; T. Hempel; D. Rudloff; F. Bertram; J. Christen; A.V. Sakharov; M.V. Maximov; A.S. Usikov; W.V. Lundin; B.V. Pushnyi; Z.I. Alferov |
| Optical Properties of InGaN/GaN Multiple Quantum Wells / J. Allègre; P. Lefebvre; Sandrine Juillaguet; Jean Camassel; W. Knap; Q. Chen; M. Asif Khan |
| Time-Resolved Spectroscopy on GaN/AlGaN Double Heterostructures and Quantum Wells / J.S. Im; J. Off; A. Sohmer; F. Scholz; A. Hangleiter |
| Non-Linear Exciton Spectroscopy of GaN/AlGaN Quantum Wells / R. Cingolani; G. Coli; R. Rinaldi; L. Calcagnile; H. Tang; A.E. Botchkarev; W. Kim; A. Salvador; Hadis Morkoç |
| Quantum Confinement Stark Effect in InGaN SQW Studied by Electric Field Modulated PL Spectra / Y. Iyechika; Y. Ono; T. Takada |
| Optical Characterization of InGaN Layers and GaN/InGaN/GaN Double Heterostructures / A. Graber; R. Averbeck; U. Barnhöfer; H. Riechert; Helmut Tews |
| Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates / W.V. Lundin; A.S. Usikov; B.V. Pushnyi; U.I. Ushakov; M.V. Stepanov; N.M. Shmidt; T.V. Shubina; A.V. Sakharov; N.N. Faleev; V. Solov'ev; Alla A. Sitnikova; Yu.A. Kudriavtsev; B.Ya. Ber; Yu.M. Zadiranov |
| Room Temperature Photoluminescence Linewidth versus Material Quality of GaN / Bo Monemar; I.A. Buyanova; Peder Bergman; Hiroshi Amano; Isamu Akasaki |
| Residual Donors in GaN Epitaxial Films - A Correlation of HALL Effect, SIMS and Photoluminescence Data / M. Topf; W. Kriegseis; W. Burkhardt; I. Dirnstorfer; D. Meister; B.K. Meyer |
| Are there any Shallow Acceptors in GaN? / Bo Monemar |
| Crystal Structure and Optical Properties of Bulk GaN Crystals Grown from a Melt at Reduced Pressure / V. Sukhoveyev; V. Ivantsov; A.S. Zubrilov; V. Nikolaev; Irina P. Nikitina; V. Bougrov; D. Tsvetkov; Vladimir Dmitriev |
| Characterization of GaN Quantum Dots on AlGaN/SiC Substrate Using Cathodoluminescence / A. Petersson; S. Tanaka; Y. Aoyagj; L. Samuelson |
| Cathodoluminescence of Cubic GaN Epilayers / Cheng Ming Wang; Donat J. As; D. Schikora; B. Schöttker; K. Lischka |
| Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epytaxy on SiC/Silicon (100) Substrates / Marek Godlewski; V.Yu. Ivanov; Peder Bergman; Bo Monemar; A. Barski; R. Langer |
| Analysis of Reflectivity Measurements for GaN Films Grown on GaAs: Influence of Surface Roughness and Interface Layers / S. Shokhovets; R. Goldhahn; Volker Cimalla; T.S. Cheng; C.T. Foxon |
| Effect of Thermal Strain and Carrier Concentration on the Phonon Frequencies of GaN / N. Wieser; M. Klose; F. Scholz; J. Off |
| Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates / N. Wieser; M. Klose; F. Scholz; J. Off; Y. Dutrieux |
| Photoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence Microscope / Zhe Chuan Feng; M. Schurman; C.A. Tran; T. Salagaj; B. Karlicek; Ian T. Ferguson; R.A. Stall; C.D. Dyer; K.P.J. Williams; G.D. Pitt |
| Raman Microprobe Measurement of Under-Damped LO-Phonon-Plasmon Coupled Mode in n-Type GaN / Hiroshi Harima; H. Sakashita; Shinichi Nakashima |
| Micro-Raman and Electron Microscopy Analysis of Cubic GaN Layers on (001) GaAs / A. Tabata; R. Enderlein; A.P. Lima; J.R. Leite; V. Lemos; S. Kaiser; D. Schikora; B. Schöttker; U. Köhler; K. Lischka |
| Surface Polariton Raman Spectroscopy in Cubic GaN Epitaxial Layers / V.Yu. Davydov; A.V. Subashiev; T.S. Cheng; C.T. Foxon; I.N. Goncharuk; A.N. Smirnov; R.V. Zolotareva; W.V. Lundin |
| Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition / W. Götz; N.M. Johnson |
| Optical Admittance Spectroscopy of Deep Centers in Galliumnitride - Correlation with Photoluminescence / A. Krtschil; P. Fischer; Hartmut Witte; M. Lisker; J. Christen; U. Birkle; S. Einfeldt; D. Hommel |
| A Two-Band Analysis of Electrical Transport in n-Type GaN Epilayers / M.G. Cheong; Kyung Sik Oh; Eun Kyung Suh; H.J. Lee |
| Electrical Characterization of the AlN/Si(111) System / Thierry Ouisse; H.P.D. Schenk; S. Karmann; Ute Kaiser |
| Electrical and Optical Properties of Highly Strained GaN Epilayers / A.S. Usikov; W.V. Lundin; B.V. Pushnyi; N.M. Shmidt; V.Yu. Davydov; A.V. Sakharov; T.V. Shubina; Andrey A. Toropov; N.N. Faleev; M.P. Shcheglov; A.F. Tsatsul'nikov |
| Investigation of Thermal Annealing Processes on the Activation of Mg Acceptors and the Structural Quality of GaN / B. Schineller; A. Guttzeit; O. Schön; M. Heuken; K. Heime; R. Beccard |
| Nanometre Scale Reactive Ion Etching of GaN Epilayers / D. Coquillat; S.K. Murad; A. Ribayrol; C.J.M. Smith; R.M. De La Rue; Chris D.W. Wilkinson; O. Briot; R.L. Aulombard |
| Ti/Al and Cr/Al Ohmic Contacts to n-Type GaN Formed by Furnace Annealing / N. Papanicolaou; Arthur H. Edwards; Mulpuri V. Rao; Jeffrey A. Mittereder; W.T. Anderson |
| Schottky Barrier Modification on n-GaN Using a Shallow p-Type Implant / Kevin Matocha; T. Paul Chow; H. Lu; I. Bhat |
| Electrical Characteristics of In Situ Grown Lateral P +N GaN Junction Diodes on Sapphire Substrates / Jeffery B. Fedison; T. Paul Chow; H. Lu; I. Bhat |
| Nitride-Based Emitters on SiC Substrates / J. Edmond; G. Bulman; H.S. Kong; M. Leonard; K. Doverspike; W. Weeks; J. Niccum; S.T. Sheppard; G. Negley; D. Slater; J.D. Brown; J.T. Swindell; T. Overocker; J.F. Schetzina; Y.K. Song; M. Kuball; A.V. Nurmikko |
| Blue-U.V. Homojunction GaN LEDs Fabricated by MOVPE / B. Beaumont; F. Calle; S. Haffouz; Eva Monroy; Mathieu Leroux; Enrique Calleja; P. Lorenzini; Elias Muñoz Merino; Pierre Gibart |
| Electroluminescence of GaN pn Diodes / Takao Nagatomo; H. Saitou |
| Ultraviolet Stimulated Emission in GaN/AlGaN Multiple Quantum Wells / L. Calcagnile; G. Coli; D. Rinaldi; R. Cingolani; H. Tang; A.E. Botchkarev; W. Kim; A. Salvador; Hadis Morkoç |
| An Investigation of Breakdown Mechanisms in Al(GaN) MSM Photodetectors / Ian T. Ferguson; S. Liang; C.A. Tran; R.F. Karlicek; Zhe Chuan Feng; Y. Lu; C. Joseph |
| High Speed, Low Noise Ultraviolet Photodetectors Based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) Structures / G. Xu; A. Salvador; A.E. Botchkarev; W. Kim; C. Lu; H. Tang; Hadis Morkoç; G. Smith; M. Estes; T. Dang; P. Wolf |
| Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates / Remis Gaska; Michael S. Shur; J.W. Yang; A. Osinsky; A.O. Orlov; G.L. Snider |
| Two-Dimensional Electronic Transport in AlGaN/GaN Heterostructures / W. Walukiewicz; L. Hsu; Eugene E. Haller |
| Annealed Si1-xCx Emitter Silicon Heterojunction Bipolar Transistors / R. Alcubilla; D. Bardés; A. Orpella; J. Calderer; L.F. Marsal; J. Pallarès; X. Correiga |
| Ultraviolet Excitonic Laser Action at Room Temperature in ZnO Nanocrystalline Epitaxial Films / Megumi Kawasaki; A. Ohtomo; H. Koinuma; Yoji Sakurai; Yoichi Yoshida; Z.K. Tang; P. Yu; G.K.L. Wang; Y. Segawa |
| Double Heterostructure Based on ZnO and MgxZn1-xO / A. Ohtomo; Megumi Kawasaki; T. Koida; H. Koinuma; Yoji Sakurai; Yoichi Yoshida; M. Sumiya; Shunro Fuke; Tadashi Yasuda; Y. Segawa |
