Preface |
List of Contributors |
Introduction to Hydrogen in Semiconductors II / Norbert H. NickelChapter 1: |
Isolated Monatomic Hydrogen in Silicon / Noble M. Johnson ; Chris Van de WalleChapter 2: |
Introduction / I.: |
Theory / II.: |
Hydrogen in the Positive Charge State: H[superscript +] / 1.: |
Hydrogen in the Neutral Charge State: H[superscript 0] / 2.: |
Hydrogen in the Negative Charge State: H[superscript -] / 3.: |
Relative Stability of Different Charge States and Negative-U Character / 4.: |
Experiment / III.: |
Donor Level |
Acceptor Level |
Equilibrium Densities |
Conclusions / IV.: |
Electron Paramagnetic Resonance Studies of Hydrogen and Hydrogen-Related Defects in Crystalline Silicon / Yurij V. GorelkinskiiChapter 3: |
Interstitial (BC) Hydrogen in Silicon |
Experimental Procedure |
EPR Spectrum of Bond-Centered Hydrogen |
Stress-Induced Alignment of Bond-Centered Hydrogen |
Thermally Activated Annealing |
EPR of Hydrogen-Related Complexes in Silicon |
Hydrogen-Intrinsic Defect Complexes |
EPR of Platinum-Hydrogen and Sulphur-Hydrogen Complexes |
ENDOR Spectra of Si--H Bonds at the (111) Si Surface |
ENDOR of Hydrogen in the Oxygen Thermal Donor (NL10) |
Hydrogen-Induced Effects in Silicon |
Hydrogen-Associated Shallow Donors in Hydrogen-Implanted Silicon |
Stress-Induced Alignment of the AA1 Spectrum |
Neutral Charge State of Hydrogen-Associated Donor |
EPR Evidence of Hydrogen-Enhanced Diffusion of Al in Silicon |
Summary and Conclusions / V.: |
Hydrogen in Polycrystalline Silicon / Chapter 4: |
Experimental Techniques |
Sample Preparation and Characterization |
Hydrogen Passivation |
Characterization |
Hydrogen Diffusion |
Hydrogen Diffusion from a Plasma Source |
Hydrogen Diffusion from a Silicon Layer |
Hydrogen Density of States |
Hydrogen Passivation of Grain-Boundary Defects |
Metastability |
Light-Induced Defect Generation |
Metastable Changes in the Electrical Conductivity |
Hydrogen-Induced Defects During Plasma Exposure / VI.: |
Generation of Acceptor-Like Defects |
Platelets |
Summary and Future Directions / VII.: |
Hydrogen Phenomena in Hydrogenated Amorphous Silicon / Wolfhard BeyerChapter 5: |
Material Characterization by Hydrogen Effusion and Infrared Absorption |
Measurement Techniques and Material Preparation |
Hydrogen Effusion Data |
Infrared Absorption Data |
Experimental Hydrogen Diffusion and Solubility Data |
Hydrogen Diffusion Data |
Hydrogen Solubility Data |
Hydrogen Diffusion and Effusion Effects |
Hydrogen Diffusion Processes |
Hydrogen Density of States Distribution and Hydrogen Chemical Potential |
Temperature Shift of Hydrogen Chemical Potential and Meyer-Neldel Rule of Hydrogen Diffusion |
Time Dependence of Hydrogen Diffusion Coefficient |
Deviations from Error-Function Diffusion Profiles / 5.: |
Plasma In-Diffusion Versus Layer Diffusion / 6.: |
Relation Between SIMS Diffusion Data and Hydrogen Effusion Data / 7.: |
Interrelation Between IR Absorption Spectra and Effusion Transients / 8.: |
Hydrogen Solubility Effects |
Solubility in Compact Material |
Hydrogen-Related Void Formation |
Hydrogen Interactions with Polycrystalline and Amorphous Silicon--Theory / Chris G. Van de WalleChapter 6: |
Role of Hydrogen in Amorphous and Polycrystalline Silicon |
General Features of Hydrogen in Silicon |
Computational Approaches |
Hydrogen Interactions With Amorphous Silicon |
Hydrogen Motion - Introduction |
Hydrogen Interactions with Dangling Bonds |
Hydrogen Interactions with Overcoordination Defects |
Hydrogen Interactions with Weak Si--Si Bonds |
Simulations of Amorphous Networks |
Hydrogen Diffusion and Metastability - Discussion |
Hydrogen Versus Deuterium for Passivation of Dangling Bonds |
Grain Boundaries |
Hydrogen Interactions with Grain Boundaries |
Hydrogen-Induced Generation of Donor-Like Metastable Defects |
Hydrogen-Induced Generation of Acceptor-Like Defects |
Conclusions and Future Directions |
Hydrogen in Polycrystalline CVD Diamond / Karen M. McNamara RutledgeChapter 7: |
Solid-State Characterization Techniques |
Fourier Transform Spectroscopy |
Nuclear Magnetic Resonance |
Electron Paramagnetic Resonance |
Other Analysis Techniques |
Results of Solid-State Analysis |
Covalent Bonding Environments |
Quantitative Hydrogen Concentrations |
Local Hydrogen Distribution |
Proximity to Paramagnetic Defects |
Macroscopic Hydrogen Distributions |
Effects of Hydrogen on Observed Properties |
Infrared Transmission |
Thermal Conductivity |
Summary |
Dynamics of Muonium Diffusion, Site Changes and Charge-State Transitions / Roger L. LichtiChapter 8: |
Transverse-Field Methods |
Longitudinal-Field Methods |
Identification and Characterization of Muonium States |
Neutral Paramagnetic Centers |
Charged Diamagnetic Centers |
Dynamics of Muonium Transitions |
Silicon: The Basic Model |
Germanium |
Gallium Arsenide |
Other III-V Materials |
Relevance to Hydrogen Impurities |
Hydrogen in III-V and II-VI Semiconductors / Matthew D. McCluskey ; Eugene E. HallerChapter 9: |
Hydrogen in III-V Semiconductors |
Hydrogen in GaAs |
Hydrogen in AlAs |
Hydrogen in InP |
Hydrogen in GaP |
Hydrogen in AlSb |
Hydrogen in GaN |
Hydrogen in Other III-V Semiconductors |
Hydrogen in II-VI Semiconductors |
Hydrogen in ZnSe |
Hydrogen in CdTe |
Summary and Future Discussion |
The Properties of Hydrogen in GaN and Related Alloys / S. J. Pearton ; J. W. LeeChapter 10: |
Hydrogen in As-Grown Nitrides |
Doped Material |
Sources of Hydrogen |
Diffusion |
Dopant Passivation |
Calcium |
Carbon |
Diffusion and Reactivation Mechanism |
Alloys |
In-Containing Nitrides |
Mechanisms |
Heterostructures |
Role of Hydrogen During Processing |
Implant Isolation |
Wet Processing |
Deposition and Etching |
Theory of Hydrogen in Nitrides |
Theory of Hydrogen in GaN / Jorg NeugebauerChapter 11: |
Method |
Defect Concentrations and Solubility |
Energetics, Atomic Geometries, and Electronic Structure |
Monatomic Hydrogen in GaN |
Atomic Geometries and Stable Positions |
Migration Path and Diffusion Barriers |
Formation Energies and Negative-U Effect |
Hydrogen Molecules in GaN |
Hydrogen-Acceptor Complexes in GaN |
The Mg-H Complex |
Other H-Acceptor Complexes |
Complexes of H With Native Defects |
Hydrogen Interacting with Nitrogen Vacancies |
Hydrogen Interacting with Gallium Vacancies |
Role of Hydrogen in Doping GaN |
Doping in the Absence of Hydrogen |
Doping in the Presence of Hydrogen |
Activation Mechanism of the Dopants |
General Criteria for Hydrogen to Enhance Doping / VIII.: |
Conclusions and Outlook / IX.: |
Index |
Contents of Volumes in This Series |
Hydrogenation Methods / J.I. Pankove ; N.M. Johnson ; C.H. Seager |
Hydrogenation of Defects in Crystalline Silicon |
Hydrogen Passivation of Damage Centers in Semiconductors / J.W. Corbett ; P. De*abak ; U.V. Desnica ; S.J. Pearton |
Neutralization of Deep Levels in Silicon |
Neutralization of Shallow Acceptors in Silicon |
Neutralization of Donor Dopants and Formation of Hydrogen-Induced Defects in n-type Silicon |
Vibrational Spectroscopy of Hydrogen-Related Defects in Silicon / M. Stavola |
Hydrogen in Semiconductors: Ion Beam Techniques / A.D. Marwick |
Hydrogen Migration and Solubility in Silicon / C. Herring |
Hydrogen-Related Phenomena in Crystalline Germanium / E.E. Haller |
Hydrogen Diffusion in Amorphous Silicon / J. Kakalios |
Neutralization of Defects and Dopants in III*b1V Semiconductors / J. Chevallier ; B. Clerjaud ; B. Pajot |
Computational Studies of Hydrogen-Containing Complexes in Semiconductors / G.G. DeLeo ; W.B. Fowler |
Muonium in Semiconductors / R.F. Kiefl ; T.L. Estle |
Theory of Isolated Interstitial Hydrogen and Muonium in Crystalline Semiconductors / C.G. Van de Walle |
Each chapter includes references |
Preface |
List of Contributors |
Introduction to Hydrogen in Semiconductors II / Norbert H. NickelChapter 1: |
Isolated Monatomic Hydrogen in Silicon / Noble M. Johnson ; Chris Van de WalleChapter 2: |
Introduction / I.: |
Theory / II.: |