| The Characterization of Structures and Defects by Means of Electron Microscopy and Electron Diffraction / S. Amelinckx; Gustaaf Van Tendeloo; J. Van Landuyt |
| Hetero-Epitaxy / H. Beneking |
| Morphology of Modulated, Quasicrystals and Organic Crystals / P. Bennema |
| Growth of Ternary Compound Semiconductors by Liquid Zone Transport / K.W. Benz; G. Bischopink |
| Advances in the Bulk Growth of GaAs and InP by the Lec and VGF Techniques / A.S. Jordan; E.M. Monberg |
| Growth Inhibitors and Promotors Examplified on Solution Growth of Paraffin Crystals / R. Kern; R. Dassonville |
| Recent Progress in the Growth of II-VI Compounds / J.B. Mullin |
| Quality Improvement of CdTe and Related Compounds Grown by the Bridgman Method / M. Mühlberg; P. Rudolph; A. Wenzel |
| The Role of Marangoni Convection in the Growth of GaAs Crystals by the Floating Zone Technique under Microgravity / G. Müller; Roland Rupp |
| Floating Zone Silicon Crystal Growth / W. Schröder |
| Liquid Phase Electroepitaxy / Yu.V. Shmartsev |
| Fractal Growth of Crystals / T. Vicsek |
| Kinetics of LPE Growth of Garnet Films |
| Growth and Characterization of BaFe12-2x(Tl,Co)xO19 Hexagonal Ferrite Crystals |
| Crystal Growth and Characterization of Bismuth Cuprate Bl2CuO4 |
| Dissolution Forms of Ca Garnet Single Crystal Spheres |
| Growth of BaFe12O19 Single Crystals from a Sodium Oxide Flux - Physical Properties of Some Solutions of the Pseudo-Binary System BaFe12O19 |
| The Influence of History and Aluminium Ions on the Kinetics of the IV - III Polymorphic Phase Transition in Ammonium Nitrate |
| Industrial Bridgman Growth of Large Size BGO Crystals with Special Shapes |
| Core-Free Growth of Three Inch Diameter Li2B4O7 Crystal for Saw Devices |
| Uptake of Metal Ions in Calcium Sulfate Hemihydrate Crystals |
| Phase Composition and Morphology of Particulates Crystallised within the Na2CO3-Na2SO4-H2O System |
| Crystal Growth and Characterization of a Piezoelectricmaterial: Berlinite, AIPO4 |
| In Situ Observation of Diffusion Limited Aggregation in Systems with High Melting Temperature |
| The Lithium Niobate Single Crystals of High Optical Quality for Polarizing Devices |
| Pressurized Powder of Cdte and Hgte as Feed Material for Crystal Growth of (Hg,Cd)Te by Travelling Heater Method |
| CdZnTe Single Crystals Grown by the Vertical Gradient Freeze (VGF) Technique with Homogeneous Zn Distribution |
| Growth, Linear and Nonlinear Optical Properties of Thin Cds and ZnSe Films |
| Magnetic Resonance and Photoluminescence Investigations in CdTe |
| Observation of Discrete Birefringence Changes in Flux Grown Potassium Titanyl Phosphate (KTP) |
| Mixed CaNdAIO4 and SrLaAIO4 Crystals |
| Crystal Growth of Magnetoplumbite Type Laser Materials |
| Mnln2Se4 and Mn2In2Se5, Crystal Growth, Structural and Electronic Properties |
| Growth of Non Magnetic Garnet Films by Liquid Phase Epitaxy |
| Growth and Characterization of CaMoO4:Nd3+:Cr6+ Single Crystals |
| Complex Microscopic Investigations on the As-Grown Cracks in Optical Single Crystals |
| Defects in Shaped Calcium Fluoride Crystals |
| Growth and Spectroscopic Investigation of GGG:Nd,Cr and GGG:Nd,Cr,Ce Crystals for Laser Applications |
| Large Dimension ND: YSAG Laser Crystal Growth Using the Bridgman-Stockbarger Process |
| Horizontal Zone-Melting Nd3+: YAG Crystal Growth: Comparison of Predicted Interface Relocation with Operating Data |
| Growth and Characterization of Alpha- and Beta-Barium Metaborate Single Crystals |
| Growing Large Crystals of Y-AI Perovskite |
| Liquid-Phase Epitaxy of (Hg,Cd)Te on Cdte Substrates by a Vertical Dipping Technique |
| The Peculiarities of Receiving of Thin Film Single Crystal Oxide Luminophores |
| A Predictive Approach to Modelling the Morphology of Organic Crystals Based on Crystal Structure Using the Atom-Atom Method |
| An Unique Zone Refining Apparatus for Purification of Low Melting Point Organic Materials |
| Organic Crystals for Non Linear Optics |
| Crystallization of Calcium and Magnesium Phospjiates in a Fluidized Bed |
| On Morphology of Crystals of Triclinic Even Normal Alkanes: Theory and Observation |
| Study of the Twinning Phenomenon in the LEC Growth of III-V Compound Single Crystals |
| Study of Inhomogeneity of Gaas Single Crystals Grown in Magnetic Field by Scanning Electron Microscopy and AB Etching Technique |
| Microdefects and their Effect on Minority Charge Carrier Lifetime in Dislocation-Free Float-Zoned Silicon |
| Growth of III-V- Semiconductors from Metallic Solutions by Appl Ying Magnetic Fields |
| Growth of InP and GaAs Crystals by Liquid Encapsulated Vertical Freezing in Open Ampoule |
| Influence of the Solid-Liquid Interface Shape on the Defect Structure and on the Twinning Probability of Lec-Grown GaAs |
| Charge Carrier Concentration Across Growth Striations in N-GaAs |
| AIN: An Alternative Material for LEC Gaas Crystal Growth |
| The Nature of Nucleation Centers of Liquid Phase under Flash Thermotreatment of Single Crystal Silicon |
| Morphology and Structure Especialities of Semiconductor Whiskers Grown by CVD-Method |
| Structure Regularities of Cracking and Crystallization Processes of Thick Amorphous Silicon Films on Crystalline Substrat |
| Interface Symmetry and Phase Epitaxy in the Ni/GaAs System |
| New Version of InGaAsP/InP Buried Lasers Based on the Selectivity of the Regrowth Process |
| Liquid Phase Epitaxy of GaAs Quantum well Structures from Bl-Ga-Al Melts |
| Influence of Backside Layers on Wafers Flatness during Epitaxial Deposition |
| Structure Change and Crystallization Process Peculiarities of Polysilicon Layers under Laser Irradiation Effect |
| Study of Microloops and Associated Particles in Si-Doped HB GaAs by TEM, DSL Photoetching and Laser Scattering Tomography |
| Comparison of the Structural Quality of the Conventional (ca. 2000 A0) and Superthin (ca. 200 A°) lnGaAsP Layeas Grown by LPE |
| Molecular Beam Epitaxy of InGaAs on Si |
| Liquid Phase Electroepitaxy of GaAs Bulk Crystals |
| Kinetics of Thin-Solution Epitaxial Growth of GaAs Layers |
| Electrochemical Method for the Measurement of Doping Profiles in Silicon |
| Progress in the Growth of (Ga,In)(As,P)/InP Heterostructures by Chloride Vapour Phase Epitaxy: Application to Optoelectronic Integrated Circuits (OEICs)s |
| The Nature and Formation of Oval Defects during MBE Growth of Gallium Arsenide Layers |
| Interface Formation in Soi-Structures by Laser Epitaxy of Polysilicon Layers |
| Heteroepitaxy of A3B5 Multicomponent Antimonides |
| Transient Stages during Epitaxy of Heterostructures on InP in a H.V.P.E. Reactor. Application to InP/InAs/InP Multiquantum Wells Growth |
| A New Approximation of Determining of the Charge Carrier Concentration in Silicon Epitaxial Layers |
| LPE Growth of Undoped GaAs and GaAlAs Layers |
| Epitaxial Growth of GaAs Films on the Silicon Substrates after Transition Layer Formation by Ion Implantation |
| Liquid-Phase Epitaxy of (Ge2)1-X(GaAs)X and (Sl2)1-X(Gap)X Solid Solutions |
| Structure of GaAs VPE Layers |
| Layer Thickness Limitation in a GaAs Chloride VPE System |
| Se-Doped GaAs Active Layer Grown with MOCVD for Microwave Application |
| Optical Properties of AlxGa1-xAsySb1-Y by Liquid Phase Epitaxy |
| Crystal Growth of V3Si and (VxCr1-X)3Si by Zone Floating |
| Structure of CaNdAlO4 and SrLaAlO4 Compounds |
| Crystallization of CaNdAlO4 and SrLaAlO4 Compounds |
| Interpretation of Twinned Structures in YBa2Cu3O7-Delta Single Crystals |
| Properties of YBa2Cu3O7-Delta Crystals Grown by an Alkalihalide Flux Route |
| Crystal Growth of 90k YBCO from Alumina Crucibles: Control of Crucible Corrosion and Crystal Contamination |
| Growth, Physical Properties of Crystalline and Noncrystalline (GeTe)1-XRx Films (R=Y, Gd,Tb) |
| A Mathematical Description of the Evolution of the Halfthickness of a Single Crystal Sheet Grown from the Melt in a Vacuum by the E.F.G. Method |
| The Use of Moments of Momenta to Predict Crystal Habits and Species in Solution |
| Global Time-Dependent Simulation of Crystal Growth |
| On the Statistical Models of Crystal Morphology |
| A Temperature Field Investigation in Case of Crystal Growth from the Melt with a Plane Interface on Exact Determined Thermal Conditions |
| Ordering Mechanism of III-V Semiconductor Alloys |
| An Extrapolation Method for Approximating Melt Convection in a Czochralski Furnace |
| Thermochemical Aspects by the Synthesis of Single Crystals in the Temperature Gradient - Binary Compounds |
| General Prediction of Crystal Growth Rates |
| The Improved Model of Steady-State LPE Growth from Solution |
| Heat Transfer Analysis in Shaped Fluorite Crystals |
| Morphological Behaviour under Diffusional Control - A Computer Simulation |
| Cellular-Dentritic Transition during Directional Solidification |
| The Characterization of Structures and Defects by Means of Electron Microscopy and Electron Diffraction / S. Amelinckx; Gustaaf Van Tendeloo; J. Van Landuyt |
| Hetero-Epitaxy / H. Beneking |
| Morphology of Modulated, Quasicrystals and Organic Crystals / P. Bennema |
| Growth of Ternary Compound Semiconductors by Liquid Zone Transport / K.W. Benz; G. Bischopink |
| Advances in the Bulk Growth of GaAs and InP by the Lec and VGF Techniques / A.S. Jordan; E.M. Monberg |
| Growth Inhibitors and Promotors Examplified on Solution Growth of Paraffin Crystals / R. Kern; R. Dassonville |
