Copper Interconnects, New Contact Metallurgies/Structures, and Low-K Interlevel Dielectrics : proceedings of the International Symposium

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Copper Interconnects, New Contact Metallurgies/Structures, and Low-K Interlevel Dielectrics : proceedings of the International Symposium / editor, G.S. Mathad ; assistant editors, H.S. Rathore ... [et al.] ; [cosponsored by] Dielectric Science & Technology, Electronics, and Electrodeposition Divisions [of the Electrochemical Society]

資料種別:

図書

出版情報:

Pennington, N.J. : Electrochemical Society, c2001-2003

形態:

2 v. ; 24 cm

シリーズ名:

Proceedings / [Electrochemical Society] ; v. 2000-27, 2003-10 <BA01323290>

著者名:

Copper Interconnects, New Contact Metallurgies/Structures, and Low-K Interlevel Dielectrics. International Symposium

Mathad, G. S. <DA03249537>

Electrochemical Society. Dielectric Science and Technology Division <DA06421624>

Electrochemical Society. Electronics Division <DA0357072X>

Electrochemical Society. Electrodeposition Division <DA06133470>

Electrochemical Society. Meeting <DA03398898>

さらに 1 件

ISBN:

9781566772945 [156677294X] ([I])
9781566773904 [1566773903] (II)

書誌ID:

BA54501047

子書誌情報

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注記:

[I]:"The symposium, cosponsored by Dielectric Science & Technology, Electronics, and Electrodeposition Divisions, was held as part of the 198th meeting of The Electrochemical Society, Inc. in Phoenix, AZ, October 22-27, 2000"--on pref.
II:"..., was held as part of the 204th meeting of The Electrochemical Society, Inc. in Orlando, FL, October 12-17, 2003"--on pref
Includes bibliographical references and indexes

言語:

英語

目次情報:

Preface

Copper Deposition

Relation of Contact Resistance Reduction and Process Parameters of Bonded Copper Interconnects in Three-Dimensional Integration Technology / K.N. Chen ; A. Fan ; C.S. Tan ; R. Reif

ECD Seed Copper Layer for Seed Enhancement in Advanced Interconnects / P.H. Haumesser ; S. Da Silva ; M. Cordeau ; X. Avale ; O. Pollet ; T. Mourier ; G. Passemard ; R. Baskaran ; T. Ritzdorf

Ultra-thin Tungsten CVD Nucleation Layer for Sub-100 nm Contact Applications / J. Gupta ; J. Sudijono ; L.C. Hsia ; S. Singh

Three-Dimensional Simulation of Superconformal Copper Deposition Based on the Curvature-Enhanced Acceletator Coverage Mechanism / E. Bar ; J. Lorenz ; H. Ryssel

Copper Electrodeposition of High Aspect Ratio Vias for Three-Dimensional Packaging / K. Kondo ; T. Yonezawa ; M. Tomisaka ; H. Yonemura ; M. Hoshino ; Y. Taguchi ; K. Takahashi

Copper Electroplating Process with Improved Stability, Conductivity and Total. Cost of Ownership / R. Preisser ; T. Dretschkow ; H. Fuerhaupter

Electroplating of Copper-Tin Alloys / R. Chebiam ; C-C. Cheng ; H. Simka ; A. Budrevich ; V. Dubin

Interactions between the Conditions of Copper Electrodeposition and the Density of Hillocks / S. Petitdidier ; M. Gregoire ; S. Segaud ; S. Courtas ; M. Juhel ; J.P. Jacquemin ; L. Dumas

Detection of Accelerator Breakdown Products in Copper Plating Baths / M. Pavlov ; E. Shalyt ; P. Bratin ; D.M. Tench

Copper Nucleation on Platinum in the Presence of Additives in Acid Copper Solution / J. Han ; M. King ; M. Stawasz ; T. Baum

An in-situ FTIR Study on Palladium Displacement Reaction for Autocatalytic Electroless Copper Deposition / Y-J. Oh ; C-H. Chung

New Additives for Super-Conformal Electroplating of Ag Thin Film for ULSI / J.J. Kim ; E.J. Ahn ; J.M. Seo

The Role of Chloride Ion in Copper Electrodeposition from Acidic Baths Containing Cl[superscript -], PEG, and SPS / M. Tan ; J.N. Harb

The Influence of 2,2'-Dipyridyl on Non-Formaldehyde Electroless Copper Plating / J. Li ; H. Hayden ; P.A. Kohl

Influence of the Anode in the Damascene Process Investigated by Electro-Chemical Impedance Spectroscopy / C. Gabrielli ; P. Mocotrguy ; H. Perrot ; A. Zdunek ; D. Nieto-Sanz ; M.C. Clech

Investigation of Copper Bath Ageing in the Damascene Process by Electro-chemical Impedance Spectroscopy / P. Mocoteguy

Barrier Films

The Proposal of All-Wet Fabrication Process for ULSI Interconnects Technologies--Application of Electroless NiB Deposition to Capping and Barrier Layers / M. Yoshino ; Y. Nonaka ; T. Yokoshima ; T. Osaka

Thickness Effect on the Diffusion Barrier Properties of ZrN in Cu/ZrN/Si Systems / C-S. Chen ; C-P. Liu ; H-G. Yang ; C-Y. A. Tsao

Characterization of Electroless Plated CoWB Barrier Films / V. Mathew ; R. Chatterjee ; S. Garcia ; L. Svedberg ; Z-X. Jiang ; R. Gregory ; K-H. Lie ; K. Yu

Effect of Ta[subscript 2]N Crystallinity on Diffusion Barrier Properties / H-C. Chung

Use of Ti[subscript x]TiN as Cap Layer for the Formation of Cobalt Silicide / M. Vulpio ; D. Fazio ; M. Bileci ; D. Mello ; C. Gerardi

Ruthenium-Based Copper Diffusion Barrier: Studied by Electrochemistry, SIMS Depth Profiling, and Sheet Resistance Measurements / O. Chyan ; R. Chan ; T. Arunagiri ; R.M. Wallace ; M.J. Kim ; T. Hurd

Low-k Inter Level Dielectric Films and CMP

A Novel Approach for Dual Damascene Trench Etch for 90 nm Low-k Inter-Connect with No Middle Etch Stop Layer / T.Q. Chen ; H. Cong ; W.P. Liu ; Y.K. Siew ; Y. Pradeep ; R. Jaiswal ; A. Jain ; I. Sim

Electrical and Mechanical Properties of Nitrogen and Fluorine Incorporated Organosilicate Glass Prepared by Plasma Enhanced Chemical Vapor Deposition / S-K. JangJian ; W-S. Hwang ; S-W. Chen ; K-H. Wei ; Y-L. Wang

Development of Spin-on Dielectric (SiLK) Etch Process for 0.13 [mu] Cu-Low k Interconnects Technology / B. Ramana Murthy ; Y.W. Chen ; X.T. Chen

The Pore Structure, Property, and Performance of a Spin-on Porous Low-k Dielectric / Y. Liu ; B. Foran ; D. Gidley ; W-L. Wu ; H. Shirataki ; H. Hanahata

Evaluation of Low-k Porous Silica Film Incorporated with Ethylene Groups / Y. Uchida ; M. Oikawa ; Y. Itoh ; K. Ishida

Strip Process Optimization for Porous ULK Films / I.J. Kalinowski ; C. Bourlot ; A. Marfoure ; O. Louveau ; S. Li ; J. Su ; G.W. Hills ; D. Louis

Characterization of Plasma Strip Processes on OSG Low-k Dielectric Films / K. Ostrowski ; I.J. Kalinovski

Reliability Characterization of Organic Ultra Low-k Film Using Voltage Breakdown / A. Krishnamoorthy ; B. Ramany Murthy ; K.Y. Yiang ; W.J. Yoo

Process-Induced Voiding in Copper Interconnect Metallization / P. Lindgren ; K. Downes ; S. Kole ; W. Murphy ; E. Cooney III ; M. Goldstein ; J. Chapple-Sokol

Planarization of Copper Layer for Damascene Interconnection by Electrochemical Polishing in Alkali-Based Solution / G-S. Park ; C-W. Chung

Characterization of a Colloidal Silica Slurry for 0.13 [mu]m Devices in a Copper CMP Process / J. Cadenhead ; G. Huffman ; D. Lewis ; A. Pamatat ; J. Verizzo ; S. Usmani ; J. Siddiqui

Mechanisms of Using Organic Acids to Clean Copper Surfaces / T. Yagishita ; K. Ishikawa ; M. Nakamura

Advanced Packaging

3-Dimensional Chip Stacking for High-Density Electronic Packaging / K. Tanida ; M. Umemoto ; K. Kojiama ; M. Ishino ; M. Bonkohara

Author Index

Subject Index

Preface

Copper Deposition

Relation of Contact Resistance Reduction and Process Parameters of Bonded Copper Interconnects in Three-Dimensional Integration Technology / K.N. Chen ; A. Fan ; C.S. Tan ; R. Reif

ECD Seed Copper Layer for Seed Enhancement in Advanced Interconnects / P.H. Haumesser ; S. Da Silva ; M. Cordeau ; X. Avale ; O. Pollet ; T. Mourier ; G. Passemard ; R. Baskaran ; T. Ritzdorf

Ultra-thin Tungsten CVD Nucleation Layer for Sub-100 nm Contact Applications / J. Gupta ; J. Sudijono ; L.C. Hsia ; S. Singh

Three-Dimensional Simulation of Superconformal Copper Deposition Based on the Curvature-Enhanced Acceletator Coverage Mechanism / E. Bar ; J. Lorenz ; H. Ryssel

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