Preface |
Materials Research Society Symposium proceedings |
High-k Materials |
Materials and Physical Properties of Novel High-k and Medium-k Gate Dielectrics / Ran Liu ; Stefan Zollner ; Peter Fejes ; Rich Gregory ; Shifeng Lu ; Kim Reid ; David Gilmer ; Bich-Yen Nguyen ; Zhiyi Yu ; Ravi Droopad ; Jay Curless ; Alex Demkov ; Jeff Finder ; Kurt Eisenbeiser |
Ultra-Thin Zirconium Oxide Films Deposited by Rapid Thermal Chemical Vapor Deposition (RT-CVD) as Alternative Gate Dielectric / Jane P. Chang ; You-Sheng Lin |
Processing of High-k Gate Dielectrics |
Challenges in Integrating the High-k Gate Dielectric Film to the Conventional CMOS Process Flow / Avinash Agarwal ; Michael Freiler ; Pat Lysaght ; Loyd Perrymore ; Renate Bergmann ; Chris Sparks ; Bill Bowers ; Joel Barnett ; Deborah Riley ; Yudong Kim ; Billy Nguyen ; Gennadi Bersuker ; Eric Shero ; Jae E. Lim ; Steven Lin ; Jerry Chen ; Robert W. Murto ; Howard R. Huff |
Engineered Tantalum Aluminate and Hafnium Aluminate ALD Films for Ultrathin Dielectric Films With Improved Electrical and Thermal Properties / Robert B. Clark-Phelps ; Anuranjan Srivastava ; Lance Cleveland ; Thomas E. Seidel ; Ofer Sneh |
High Permittivity Oxide Gate Stacks on Silicon Incorporating UHV Silicon Nitride Interfacial Layers / Mark A. Shriver ; Ann M. Gabrys ; T.K. Higman ; S.A. Campbell |
Alternating Layer Chemical Vapor Deposition (ALD) of Metal Silicates and Oxides for Gate Insulators / Roy G. Gordon ; Jill Becker ; Dennis Hausmann ; Seigi Suh |
Characterization of TiO[subscript 2] Films Grown at Low Temperatures for Alternative Gate Dielectric Application / Jun-Ying Zhang ; Ian W. Boyd |
Gate Stack and Silicide Issues In Si Processing II |
Promising Gate Stacks With Ru and RuO[subscript 2] Gate Electrodes and Y-Silicate Dielectrics / Huicai Zhong ; Greg Heuss ; You-Seok Suh ; Shin-Nam Hong ; Veena Misra ; Jason Kelly ; Gregory Parsons |
Preliminary First Principles Study of Hf and Zr Aluminates as Replacement High-k Dielectrics / Michael Haverty ; Atsushi Kawamoto ; Gyuchang Jun ; Kyeongjae Cho ; Robert Dutton |
Development of Polycide Application and Control of Process Conditions on DCS Based WSi[subscript x] / Young-Kyou Park ; Jaihyung Won ; Ju-Hwan Park ; Jung-Ho Park |
Effect of Pre-Cooling Treatment on the Formation of C54 Phase Titanium Silicide / Lin Zhang ; Yong Keun Lee |
Electrical Performance of Novel Gate Dielectrics |
Chemical Vapor Deposition of Titania/Silica and Zirconia Films / Wayne L. Gladfelter ; Ryan C. Smith ; David Burleson ; Charles J. Taylor ; Jeffrey T. Roberts ; Stephen A. Campbell ; Noel Hoilien ; Mike Tiner ; Rama Hegde ; Christopher Hobbs |
Transistors Built With ZrO[subscript 2] and HfO[subscript 2] Deposited From Nitratos / Tiezhong Ma ; Fang Chen ; Ryan Smith ; Wayne Gladfelter |
Electrical Characteristics of TaO[subscript x]N[subscript y]/ZrSi[subscript x]O[subscript y] Stack Gate Dielectric for MOS Device Applications / Hyungsuk Jung ; Hyundoek Yang ; Kiju Im ; Hyunsang Hwang |
Electrical and Structural Characteristics of Ultra-Thin TiO[subscript 2]/Ti-Si-O Stacked Gate Insulator Formed by RF Sputtering Technique / M. Koyama ; A. Kaneko ; M. Koike ; I. Fujiwara ; M. Yabuki ; M. Yoshiki ; A. Nishiyama |
Investigation on the Thermal and Electrical Properties of Ti-Si-O Film Formed by the Composite Sputtering Deposition / Akira Nishiyama ; Akio Kaneko ; Masato Koyama ; Yoshiki Kamata ; Ikuo Fujiwara ; Masahiro Koike ; Masahiko Yoshiki ; Mitsuo Koike |
Comparison of Conductance and Capacitance Techniques for Measurement of Interface States in Thin Oxides |
Novel Gate Structures |
Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion / Igor Polishchuk ; Pushkar Ranade ; Tsu-Jae King ; Chenming Hu |
Molybdenum Gate Electrode Technology for Deep Sub-Micron CMOS Generations / Ronald Lin ; Qiang Lu ; Yee-Chia Yeo ; Hideki Takeuchi |
Reduction of Whisker-Originated Short Between W Polymetal and Contact Plug / Yasushi Akasaka ; Hiroshi Suzuki ; Yuji Yokoyama ; Nobuaki Yasutake ; Hitomi Yasutake ; Susumu Yoshikawa ; Yusuke Kohyama ; Yoshio Ozawa ; Katsuhiko Hieda ; Kyoichi Suguro ; Toshihiro Nakanishi |
Annealing Behavior of WSi[subscript x] Films Prepared by CVD / M. Katiyar ; G.S. Samal ; R.K. Gupta ; Deepak ; P.K. Sahoo ; V.N. Kulkarni ; O. Adetutu |
The Electrical Characteristics of the MOSCAP Structures With W/WN[subscript x]/poly Si[subscript 1-X]Ge[subscript X] Gates Stack / S.-K. Kang ; J.J. Kim ; D.-H. Ko ; T.H. Ahn ; I.S. Yeo ; T.W. Lee ; Y.H. Lee |
A Study on the Polycrystalline Silicon Germanium Gate Electrode Fabrication Technology for Cobalt Silicide Process / Hidekazu Sato ; Takae Sukegawa ; Toshifumi Mori ; Kousuke Suzuki ; Haruhisa Mori |
X-ray Techniques for Silicides / Douglas J. Tweet ; Jer-shen Maa ; Sheng Teng Hsu |
Effects of a Ta Interlayer on the Titanium Silicide Reaction: C40 Formation and Higher Scalability of the TiSi[subscript 2] Process / F. La Via ; S. Privitera ; F. Mammoliti ; M.G. Grimaldi |
Direct Formation of C54 Phase on the Basis of C40 TiSi[subscript 2] and Its Applications in Deep Sub-Micron Technology / S.Y. Chen ; Z.X. Shen ; S.Y. Xu ; A.K. See ; L.H. Chan ; W.S. Li |
Increased Thermal Stability of Co-Silicide Using Co-Ta Alloy Films / Min-Joo Kim ; Hyo-Jick Choi ; Dae-Hong Ko ; Ja-Hum Ku ; Siyoung Choi ; Kazuyuki Fujihara ; Ho-Kyu Kang ; Hoo-Jeung Lee |
A Comparative Study of Nickel Silicide Formation Using a Titanium Cap Layer and a Titanium Interlayer / W.L. Tan ; K.L. Pey ; Simon Y.M. Chooi ; J.H. Ye |
The Influence of Ti and TiN on the Thermal Stability of CoSi[subscript 2] / C. Detavernier ; Guo-Ping Ru ; R.L. Van Meirhaeghe ; K. Maex |
Stability Improvement of Nickel Silicide With Co Interlayer on Si, Polysilicon and SiGe / Jer-Shen Maa ; Yoshi Ono ; Lisa Stecker |
Silicide Formation for Ni and Pd Bilayers on Si(100) Substrates / Xin-Ping Qu ; F. Cardon |
Shallow Junctions and Integration Issues in Feol |
Electrical Performance and Scalability of Ni-Monosilicide Towards sub 0.13 [mu]m Technologies / Anne Lauwers ; Muriel de Potter ; Richard Lindsay ; An Steegen ; Nico Roelandts ; Fred Loosen ; Christa Vrancken ; Karen Maex |
A Study on Solid Phase Reactions of Ni and Pt on Si-Ge Alloys as Contacts to Ultra-Shallow P[superscript +]N Junctions for CMOS Technology Nodes Beyond 70 nm / Jing Liu ; Hongxiang Mo ; Mehmet C. Ozturk |
CoSi[subscript 2] Formation Using a Ti Capping Layer--The Influence of Processing Conditions on CoSi[subscript 2] Nucleation |
Thin-Film-Edge-Induced Stresses in Substrates / S.P. Wong ; H.J. Peng ; Shounan Zhao |
Detecting Impurities in the Ultra Thin Silicon Oxide Layer by Hg-Schottky Capacitance-Voltage (CV) Method / D. Liu ; Q. Wang ; H. Paravi ; V. Drobny ; J. Moquin |
Electrical and Structural Properties of Catalytic-Nitrided SiO[subscript 2] Films / Akira Izumi ; Hideki Matsumura |
Atomic Scale Nitridation of Silicon Oxide Surfaces by Remote-Plasma-Excited Nitrogen / Yoji Saito ; Koichi Tokuda |
Author Index |
Subject Index |
Preface |
Materials Research Society Symposium proceedings |
High-k Materials |
Materials and Physical Properties of Novel High-k and Medium-k Gate Dielectrics / Ran Liu ; Stefan Zollner ; Peter Fejes ; Rich Gregory ; Shifeng Lu ; Kim Reid ; David Gilmer ; Bich-Yen Nguyen ; Zhiyi Yu ; Ravi Droopad ; Jay Curless ; Alex Demkov ; Jeff Finder ; Kurt Eisenbeiser |
Ultra-Thin Zirconium Oxide Films Deposited by Rapid Thermal Chemical Vapor Deposition (RT-CVD) as Alternative Gate Dielectric / Jane P. Chang ; You-Sheng Lin |
Processing of High-k Gate Dielectrics |