Growth of Self-Organized Quantum Dots / J.-S. Lee1: |
Introduction / 1.1: |
Fabrication Techniques of Quantum Dots / 1.2: |
Quantum Dot Fabrication by Lithographic Techniques / 1.2.1: |
Self-Organized Quantum Dot Fabrication / 1.2.2: |
Ordering of Three-Dimensional Islands / 1.3: |
Structural Characterization of Quantum Dots / 1.3.1: |
Ordering of Quantum Dot Position / 1.3.2: |
Real-Time Monitoring of Self-Organized Quantum Dot Formation / 1.4: |
Reflection High-Energy Electron Diffraction in Molecular Beam Epitaxy / 1.4.1: |
Optical in situ Measurement in Metal-Organic Vapor-Phase Epitaxy / 1.4.2: |
References |
Excitonic Structures and Optical Properties of Quantum Dots / Toshihide Takagahara2: |
Quantum and Dielectric Confinement Effect / 2.1: |
Nonlocal Response Theory of Radiative Decay Rate of Excitons in Quantum Dots: Size Dependence and Temperature Dependence / 2.3: |
Formulation / 2.3.1: |
Size Dependence of Excitonic Radiative Decay Rate / 2.3.2: |
Effect of Homogeneous Broadening on Excitonic Radiative Decay Rate / 2.3.3: |
Electron-Hole Exchange Interaction in Degenerate Valence Band Structures / 2.4: |
Exciton Doublet Structures / 2.4.1: |
Polarization Characteristics of Exciton Doublets / 2.4.3: |
Enhancement of Excitonic Optical Nonlinearity in Quantum Dot Arrays / 2.5: |
Exciton Band Structure in Quantum Dot Arrays / 2.5.1: |
Excitonic Optical Nonlinearity of Quantum Dot Arrays / 2.5.2: |
Tolerance Limits for the Fluctuation of Structure Parameters of the Quantum Dot Array / 2.5.3: |
The Polariton Effect and Photonic Band Structures / 2.5.4: |
Summary / 2.6: |
Expression of Depolarization Field / Appendix A: |
Depolarization Field in the Presence of a Background Dielectric Constant / Appendix B: |
Vector Spherical Harmonics / Appendix C: |
Parameter Related to the Electron-Hole Exchange Energies / Appendix D: |
Electron-Phonon Interactions in Semiconductor Quantum Dots / 3: |
Energy Spectra of Acoustic Phonon Modes in Spherical Nanocrystals / 3.1: |
The Case of the Stress-Free Boundary Condition / 3.2.1: |
The Case of Smooth Contact Between a Quantum Dot and the Surrounding Medium / 3.2.2: |
Derivation of the Electron-Acoustic-Phonon Interactions / 3.3: |
Derivation of Electron-Polar-Optical-Phonon Interaction in Quantum Dots / 3.4: |
A Formal Theory on the Exciton-Phonon System Within the Franck-Condon Approximation / 3.5: |
Luminescence Stokes Shift and Huang-Rhys Factor / 3.6: |
Strain Tensor Components in General Orthogonal Curvilinear Coordinates / 3.7: |
Micro-Imaging and Single Dot Spectroscopyof Self-Assembled Quantum Dots / Mitsuru Sugisaki4: |
How to Get Access to a Single Quantum Dot / 4.1: |
Observation Energy Dependence and Optical Anisotropy / 4.3: |
Mechanism for Optical Anisotropy / 4.3.1: |
Optical Anisotropy of Individual Quantum Dots / 4.3.2: |
Many Carrier Effects / 4.4: |
State Filling Effects Studied by Micro-Imaging / 4.4.1: |
Multiexciton States / 4.4.2: |
Biexciton Binding Energy / 4.4.3: |
Temperature Dependence / 4.5: |
Band Gap Energy Shift / 4.5.1: |
Thermal Activation / 4.5.2: |
Study of Thermal Activation by Micro-Photoluminescence Images / 4.5.3: |
Fluorescence Intermittency / 4.6: |
Micro-Photoluminescence Images of Blinking Dots / 4.6.1: |
Random Telegraph Signals in Various Systems / 4.6.2: |
Random or Correlated? / 4.6.3: |
Excitation Power Dependence / 4.6.4: |
Origin of Fluorescence Intermittency in Inp Self-Assembled Dots / 4.6.5: |
Experimental Verification of the Model187 / 4.6.6: |
Some Other Interesting Phenomena / 4.7: |
External Electric Field Effects / 4.7.1: |
Magnetic Micro-Photoluminescence Spectra / 4.7.2: |
Fine Splitting by Anisotropic Strain / 4.7.3: |
Time Domain and Nonlinear Measurements / 4.7.4: |
Persistent Spectral Hole Burning in Semiconductor Quantum Dots / Yasuaki Masumoto4.8: |
Precursor and Discovery of the Persistent Spectral Hole-Burning Phenomenon / 5.1: |
Persistent Spectral Hole Burning, Hole Filling, and Their Mechanism / 5.3: |
Luminescence Hole Burning and Charged Exciton Complexes / 5.4: |
Photostimulated Luminescence, Luminescence Blinking, and Spectral Diffusion / 5.5: |
Application of Persistent Spectral Hole Burning to Site-Selective Spectroscopy / 5.6: |
Dynamics of Carrier Relaxation in Self-Assembled Quantum Dots / Ivan V. Ignatiev ; Igor E. Kozin5.7: |
Experimental Details / 6.1: |
Photoluminescence Spectra in External Electric Field / 6.3: |
Physical Mechanisms / 6.4: |
Model of Selective Photoluminescence Quenching / 6.4.1: |
Kinetics / 6.5: |
Acoustic Phonon Resonances / 6.6: |
Auger-Like Processes / 6.7: |
Conclusion / 6.8: |
Resonant Two-Photon Spectroscopy of Quantum Dots / Alexander Baranov7: |
Electronic Structure of Cds(Se) Quantum Dots / 7.1: |
Two-Photon Absorption Techniques / 7.2.1: |
The Line-Narrowing Technique / 7.2.2: |
Analysis of RHRS and RSHS Excitation Spectra / 7.2.3: |
Energy Structure of Low-Energy Confined Excitons in CuCl Quantum Dots / 7.3: |
Exciton-Phonon Interaction in CuBr and CuCl Quantum Dots / 7.4: |
CuBr Quantum Dots: Coupled Exciton-LO-Phonon States / 7.4.1: |
CuCl Quantum Dots: Size Dependence of the Exciton-LO-Phonon Interaction / 7.4.2: |
CuCl Quantum Dots: Softening of LO Phonons in the Presence of an Exciton / 7.4.3: |
Determination of the Orientation of CuCl Nanocrystals in a NaCl Matrix / 7.5: |
Single Nanocrystal Luminescence by Two-Photon Excitation / 7.6: |
Homogeneous Width of Confined Excitons in Quantum Dots -Experimental / 7.7: |
Spectral Hole Burning and Fluorescence Line Narrowing / 8.1: |
Single Quantum Dot Spectroscopy / 8.3: |
Photon Echo / 8.4: |
Accumulated Photon Echo / 8.5: |
Accumulated Photon Echo and Persistent Hole Burning / 8.5.1: |
Phase-Modulation Technique of the Accumulated Photon Echo -Application to Quantum Dots / 8.5.2: |
Accumulated Photon Echo Signal and the Homogeneous Width of CuCl Quantum Dots / 8.5.3: |
Accumulated Photon Echo Signal and the Homogeneous Width of CdSe Quantum Dots / 8.5.4: |
Lowest-Temperature Accumulated Photon Echo Signal and Homogeneous Width / 8.5.5: |
Summary of the Accumulated Photon Echo of Quantum Dots / 8.5.6: |
Coherency Measurements / 8.6: |
Theory of Exciton Dephasing in Semiconductor Quantum Dots / 9: |
Green Function Formalism of Exciton Dephasing Rate / 9.1: |
Exciton-Phonon Interactions / 9.3: |
Excitons in Anisotropic Quantum Disks / 9.4: |
Temperature-Dependence of the Exciton Dephasing Rate / 9.5: |
Elementary Processes of Exciton Pure Dephasing / 9.6: |
Mechanisms of Population Decay of Excitons / 9.7: |
Phonon-Assisted Population Relaxation / 9.7.1: |
Phonon-Assisted Exciton Migration / 9.7.2: |
Correlation Between Temperature Dependence of Exciton Dephasing Rate and Strength of Quantum Confinement / 9.8: |
Polarization Relaxation of Excitons / 9.9: |
Photoluminescence Spectrum under Selective Excitation / 9.10: |
Summary and Discussion / 9.11: |
Excitonic Optical Nonlinearity and Weakly Correlated Exciton-Pair States / Selvakumar V. Nair10: |
Exciton States / 10.1: |
Configuration Interaction in a Truncated Basis / 10.2.1: |
Variational Approach / 10.2.3: |
Kayanuma's Correlated Basis Set / 10.2.4: |
Biexciton States / 10.3: |
Exciton-Exciton Product State Basis / 10.3.1: |
Electron-Hole Exchange Interaction / 10.3.3: |
Exciton and Biexciton Energy Levels: The Case of Cucl / 10.4: |
Transition Dipole Moments / 10.5: |
Results for Cucl / 10.5.1: |
Weakly Correlated Exciton Pair States / 10.6: |
Nonlinear Optical Properties / 10.7: |
Size Dependence of the Third-Order Nonlinear Susceptibility / 10.7.1: |
Excited State Absorption from the Exciton Ground State / 10.7.2: |
Experimental Observation of the Weakly Correlated Exciton Pair States / 10.7.3: |
Recent Progress in Nonlinear Nano-Optics / 10.7.4: |
Summary and Conclusions / 10.8: |
Two-Particle States with L = 1, 2 |
Coulomb Effects in the Optical Spectra of Highly Excited Semiconductor Quantum Dots / 11: |
Local Density Approximation for Electrons and Holes / 11.1: |
Application of the Local Density Approximation to Quantum Dots / 11.3: |
Spherical Approximation / 11.3.1: |
Cylindrical Quantum Dots / 11.3.2: |
Beyond the Local Density Approximation: Spectral Broadening and Relaxation by Coulomb Scattering / 11.4: |
Spin Fine Structure of a Few Exciton Spectra: the Configuration Interaction Approach / 11.5: |
Conclusions / 11.6: |
Device Applications of Quantum Dots / Kenichi Nishi12: |
Improvements of Characteristics in Quantum Dot Devices / 12.1: |
Thermal Broadening in Bulk and Quantum Well Semiconductors / 12.1.1: |
Density of States in Quantum Nanostructures / 12.1.2: |
Other Characteristic Changes of Quantum Dots for Device Applications / 12.1.3: |
Required Quantum Dots Dimensions for Device Applications / 12.1.4: |
Required Characteristics for Quantum Dot Optical Devices / 12.1.5: |
Advantages of Self-Assembled Quantum Dots / 12.1.6: |
Optical Devices with Quantum Dots / 12.2: |
Quantum Dot Lasers with Improved Temperature Characteristics / 12.2.1: |
Lasing Wavelength Control in Quantum Dot Lasers / 12.2.2: |
Reduction of Threshold Current Density in Quantum Dot Lasers / 12.2.3: |
Vertical-Cavity Surface-Emitting Lasers with Quantum Dots / 12.2.4: |
Miscellaneous Improvements in Quantum Dot Lasers / 12.2.5: |
Other Optical Devices / 12.2.6: |
Future of Quantum Dot Devices / 12.3: |
Ideal Quantum Dot Structures for Device Applications / 12.3.1: |
Ultimate Device Performances with Quantum Dots / 12.3.2: |
Index481 |
Growth of Self-Organized Quantum Dots / J.-S. Lee1: |
Introduction / 1.1: |
Fabrication Techniques of Quantum Dots / 1.2: |
Quantum Dot Fabrication by Lithographic Techniques / 1.2.1: |
Self-Organized Quantum Dot Fabrication / 1.2.2: |
Ordering of Three-Dimensional Islands / 1.3: |