Mesoscopic electronics in solid state nanostructures

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Mesoscopic electronics in solid state nanostructures / Thomas Heinzel

資料種別:: 図書
出版情報:: Weinheim : Wiley-VCH, c2003
形態:: 337 p. ; 25 cm
著者名:: Heinzel, Thomas
ISBN:: 9783527403752 [3527403752]
書誌ID:: BA62167177

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注記:

Includes bibliographical references (p. [323]-334) and index

主題:

Mesoscopic phenomena (Physics); Nanostructures

言語:

英語

目次情報:

Introduction / 1：

Preliminary remarks / 1.1：

Mesoscopic transport / 1.2：

Ballistic transport / 1.2.1：

The quantum Hall effect and Shubnikov - de Haas oscillations / 1.2.2：

Size quantization / 1.2.3：

Phase coherence / 1.2.4：

Single electron tunnelling and quantum dots / 1.2.5：

Superlattices / 1.2.6：

Samples and experimental techniques / 1.2.7：

An Update of Solid State Physics / 2：

Crystal structures / 2.1：

Electronic energy bands / 2.2：

Occupation of energy bands / 2.3：

The electronic density of states / 2.3.1：

Occupation probability and chemical potential / 2.3.2：

Intrinsic carrier concentration / 2.3.3：

Envelope wave functions / 2.4：

Doping / 2.5：

Diffusive transport and the Boltzmann equation / 2.6：

The Boltzmann equation / 2.6.1：

The conductance predicted by the simplified Boltzmann equation / 2.6.2：

The magneto-resistivity tensor / 2.6.3：

Scattering mechanisms / 2.7：

Screening / 2.8：

Surfaces, Interfaces, and Layered Devices / 3：

Electronic surface states / 3.1：

Surface states in one dimension / 3.1.1：

Surfaces of 3-dimensional crystals / 3.1.2：

Band bending and Fermi level pinning / 3.1.3：

Semiconductor-metal interfaces / 3.2：

Band alignment and Schottky barriers / 3.2.1：

Ohmic contacts / 3.2.2：

Semiconductor heterointerfaces / 3.3：

Field effect transistors and quantum wells / 3.4：

The silicon metal-oxide-semiconductor FET (Si-MOSFET) / 3.4.1：

The Ga[Al]As high electron mobility transistor (GaAs-HEMT) / 3.4.2：

Other types of layered devices / 3.4.3：

Quantum confined carriers in comparison to bulk carriers / 3.4.4：

Experimental Techniques / 4：

Sample fabrication / 4.1：

Single crystal growth / 4.1.1：

Growth of layered structures / 4.1.2：

Lateral patterning / 4.1.3：

Metallization / 4.1.4：

Bonding / 4.1.5：

Elements of cryogenics / 4.2：

Properties of liquid helium / 4.2.1：

Helium cryostats / 4.2.2：

Electronic measurements on nanostructures / 4.3：

Sample holders / 4.3.1：

Application and detection of electronic signals / 4.3.2：

Important Quantities in Mesoscopic Transport / 5：

Magnetotransport Properties of Quantum Films / 6：

Landau quantization / 6.1：

2DEGs in perpendicular magnetic fields / 6.1.1：

The chemical potential in strong magnetic fields / 6.1.2：

The quantum Hall effect / 6.2：

Phenomenology / 6.2.1：

Origin of the integer quantum Hall effect / 6.2.2：

The quantum Hall effect and three dimensions / 6.2.3：

Elementary analysis of Shubnikov-de Haas oscillations / 6.3：

Some examples of magnetotransport experiments / 6.4：

Quasi-two-dimensional electron gases / 6.4.1：

Mapping of the probability density / 6.4.2：

Displacement of the quantum Hall plateaux / 6.4.3：

Parallel magnetic fields / 6.5：

Quantum Wires and Quantum Point Contacts / 7：

Diffusive quantum wires / 7.1：

Basic properties / 7.1.1：

Boundary scattering / 7.1.2：

Ballistic quantum wires / 7.2：

Conductance quantization in QPCs / 7.2.1：

Magnetic field effects / 7.2.3：

The "0.7 structure" / 7.2.4：

Four-probe measurements on ballistic quantum wires / 7.2.5：

The Landauer-Buttiker formalism / 7.3：

Edge states / 7.3.1：

Edge channels / 7.3.2：

Further examples of quantum wires / 7.4：

Conductance quantization in conventional metals / 7.4.1：

Carbon nanotubes / 7.4.2：

Quantum point contact circuits / 7.5：

Non-ohmic behavior of collinear QPCs / 7.5.1：

QPCs in parallel / 7.5.2：

Concluding remarks / 7.6：

Electronic Phase Coherence / 8：

The Aharonov-Bohm effect in mesoscopic conductors / 8.1：

Weak localization / 8.2：

Universal conductance fluctuations / 8.3：

Phase coherence in ballistic 2DEGs / 8.4：

Resonant tunnelling and S - matrices / 8.5：

Singe Electron Tunnelling / 9：

The principle of Coulomb blockade / 9.1：

Basic single electron tunnelling circuits / 9.2：

Coulomb blockade at the double barrier / 9.2.1：

Current-voltage characteristics: the Coulomb staircase / 9.2.2：

The SET transistor / 9.2.3：

SET circuits with many islands; the single electron pump / 9.3：

Quantum Dots / 10：

Phenomenology of quantum dots / 10.1：

The constant interaction model / 10.2：

Beyond the constant interaction model / 10.3：

Shape of conductance resonances and current-voltage characteristics / 10.4：

Other types of quantum dots / 10.5：

Mesoscopic Superlattices / 11：

One-dimensional superlattices / 11.1：

Two-dimensional superlattices / 11.2：

SI and cgs Units / A：

Appendices

Correlation and Convolution / B：

Fourier transofrmation / B.1：

Convolutions / B.2：

Correlation functions / B.3：

Capacitance Matrix and Electrostatic Energy / C：

The Transfer Hamiltonian / D：

Solutions to Selected Exercises / E：

References

Index

Introduction / 1：

Preliminary remarks / 1.1：

Mesoscopic transport / 1.2：

Ballistic transport / 1.2.1：

The quantum Hall effect and Shubnikov - de Haas oscillations / 1.2.2：

Size quantization / 1.2.3：

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