| Preface |
| Materials Research Society Symposium Proceedings |
| Electronic Devices |
| Control of Indium Surface Segregation in GaAs Layer on InGaP Grown by MOVPE / Y. Fukushima ; Y. Nakano ; Y. Shimogaki |
| Lateral Epitaxial Overgrowth of InAs on (100) GaAs Substrates / Ganesan Suryanarayanan ; Anish A. Khandekar ; Brian E. Hawkins ; Thomas F. Kuech ; Susan E. Babcock |
| Epitaxial Praseodymium Oxide: A New High-K Dielectric / H.J. Osten ; E. Bugiel ; A. Fissel |
| Z-Contrast Imaging and EELS of Dislocation Cores at the Si/GaAs Interface / S. Lopatin ; G. Duscher ; S.J. Pennycook ; M.F. Chisholm |
| Fracture Mechanical Evaluation of GaAs Wafers / M. Schaper ; M. Jurisch ; F. Bergner ; R. Hammer |
| Phonon Frequencies and Thermal Expansion of III-V Compounds / Robert R. Reeber |
| Si/Ge Devices and Technology |
| Terahertz-Emitting Silicon-Germanium Devices / Ralph T. Troeger ; Thomas N. Adam ; Samit K. Ray ; Pengcheng Lv ; Ulrike Lehmann ; James Kolodzey |
| New Ge-Sn Materials With Adjustable Bandgaps and Lattice Constants / Matthew R. Bauer ; John Tolle ; A. V. G. Chizmeshya ; S. Zollner ; J. Menendez ; J. Kouvetakis |
| Metal-Induced Low-Temperature Crystallization of Amorphous SiGe on Insulating Films / M. Miyao ; H. Kanno ; I. Tsunoda ; T. Sadoh ; A. Kenjo |
| Process Control of Epi-Layers for SiGe:C Hetero-Structure Bipolar Transistors / Qianghua Xie ; Erika Duda ; Mike Kottke ; Wentao Qin ; Xiang-Dong Wang ; Shifeng Lu ; Martha Erickson ; Heather B. Kretzschmar |
| Raman Scattering Study for Self-Organized Ge Quantum Dots Formed on Si Substrate / T.R. Yang ; M.M. Dvoynenko ; Z.C. Feng ; I. Ferguson ; H.H. Cheng |
| Zinc Oxide and Related Compounds |
| ZnO and ZnMgOGrowth by Molecular Beam Epitaxy / Mitsuaki Yano ; Ken-ichi Ogata ; FengPing Ya ; Kazuto Koike ; Shigehiko Sasa ; Masataka Inoue |
| Luminescence and EPR Study of Lithium-Diffused ZnO Crystals / N.Y. Garces ; Lijun Wang ; M.M. Chirila ; L.E. Halliburton ; N.C. Giles |
| MBE Growth and Optical Properties of ZnSeO / Y. Nabetani ; T. Mukawa ; Y. Ito ; T. Kato ; T. Matsumoto |
| Implant Isolation of ZnO Epitaxial Layers / S.O. Kucheyev ; C. Jagadish ; J.S. Williams ; P.N.K. Deenapanray |
| Lattice Site Location Studies of Rare-Earths Implanted in ZnO Single-Crystals / Elisabete M.C. Rita ; Ulrich Wahl ; Armandina L. Lopes ; Joao P. Araujo ; Joao G. Correia ; Edward Alves ; Jose C. Soares |
| Effect of Remote Hydrogen Plasma Treatment on ZnO Single Crystal Surfaces / Yuri M. Strzhemechny ; John Nemergut ; Junjik Bae ; David C. Look ; Leonard J. Brillson |
| Emitters, Lasers and Photovoltaics |
| Ultraviolet Emitting SrS: Te Thin Films / J.M. Fitz-Gerald ; J. Hoekstra ; J.D. Fowlkes ; P.D. Rack |
| Thermally Evaporated AgGaTe[subscript 2] Thin Films For Low-Cost p-AgGaTe[subscript 2]/n-Si Heterojunction Solar Cells / Krishna C. Mandal ; Anton Smirnov ; Utpal N. Roy ; Arnold Burger |
| Properties of GaAsSb QW Heterostructures Having Various Barrier Materials Grown by Metalorganic Chemical Vapor Deposition / Min Soo Noh ; Jae Hyun Ryou ; Ying-Lan Chang ; Robert Weissman ; Russell D. Dupuis |
| High Efficiency Bulk Crystalline Silicon Light Emitting Diodes / Jianhua Zhao ; Aihua Wang ; Thorsten Trupke ; Martin A. Green |
| Extremely Large Er Excitation Cross Section in Er,O-Codoped GaAs Light Emitting Diodes Grown by Organometallic Vapor Phase Epitaxy / Yasufumi Fujiwara ; Atsushi Koizumi ; Kentaro Inoue ; Akira Urakami ; Taketoshi Yoshikane ; Yoshikazu Takeda |
| High-Resolution Study of Light and Heat Patterns in Infrared Emitting Devices / V.K. Malyutenko |
| Poster Session |
| Electrical and Optical Properties of Zinc Oxide Thin Films and Heavily Aluminum-Doped Zinc Oxide Thin Films Prepared by Molecular Beam Epitaxy / Takeshi Ohgaki ; Yuji Kawamura ; Naoki Ohashi ; Hirofumi Kakemoto ; Satoshi Wada ; Yutaka Adachi ; Hajime Haneda ; Takaaki Tsurumi |
| Passivation of Defects in ZnO by Hydrogen Plasma Irradiation / Takamasa Ishigaki ; Takashi Sekiguchi ; Isao Sakaguchi |
| Structural, Optical and Electrical Properties of the Novel Semiconductor Alloy ZnO[subscript x]Te[subscript (1-x)] / H.L. Porter ; C. Jin ; J. Narayan ; A.L. Cai ; J.F. Muth ; O.W. Holland |
| The Growth and Characterization of Zinc Oxide Thin Film on Fused Silica and SiO[subscript 2]/Si(100) Substrates / A. Tiwari ; H. Porter ; M. Park |
| A Differential Scanning Calorimetry (DSC) Study on the Pyrolysis Mechanism of Zinc Oxide CVD Precursor, Zinc Acetylacetonate / Yuneng Chang ; Junhsuan Hsieh ; Chonan Wang ; Liting Hong |
| Pulsed Laser Deposition of Stable Cubic ZnO/MgO Multilayers / P. Bhattacharya ; Rasmi R. Das ; Ram S. Katiyar |
| A Study on Impact of Process Parameters to Metal Organic Chemical Vapor Deposition Grown (002) Zinc Oxide Thin Films, at 320[degree]C / Hengchuan Lu ; Yumeng Hung ; Chunsung Lee ; Jianming Chen ; Yichang Jian |
| Effect of Growth Temperature and Annealing on ZnO / M.J. Reed |
| Quantum Efficiency Modeling of Amorphous/Crystalline Silicon Heterojunction Photovoltaic Devices / F. Khalvati ; S. Sivoththaman |
| A Single Source Approach to Deposition of Nickel and Palladium Sulfide Thin Films by LP-MOCVD / J. Waters ; P. O'Brien ; J.H. Park |
| Screen Printable Doped Self-Aligned Metallization for Solar Cells / Ernest A. Addo ; Ismat Shah ; Robert Opila ; Allen. M. Barnett ; Kevin Allison ; Oleg Sulima |
| Photosensitive Amorphous Si Thin Films Prepared by Magnetron Technology / Galina Khlyap ; Victor Brytan ; Larisa Bochkariova |
| Deposition of II/VI Thin Films from Novel Single-Source Precursors / Mohammad Afzaal ; Mohammad Azad Malik ; Paul O'Brien ; Jin-Ho Park |
| Amorphous-Microcrystalline Silicon Films Obtained Using Hydrogen Dilution in a DC Saddle-Field Glow-Discharge / T. Allen ; I. Milostnaya ; D. Yeghikyan ; F. Gaspari ; N.P. Kherani ; T. Kosteski ; S. Zukotynski |
| The Role of Hydrogen in Laser Crystallized Polycrystalline Silicon / N.H. Nickel ; K. Brendel |
| The Energy Band Structures of Cd[subscript 1-x]Zn[subscript x] Te Polycrystalline Thin Films and Their Applications for Photovoltaic Devices / Jiagui Zheng ; Lianghuan Feng ; Ye Shao ; Yaping Cai ; Jingquan Zhang ; Wei Cai ; Lili Wu ; Daolin Cai ; Wenjian Len ; Jumu Zhu |
| Tunnel Currents in the Photo-Field Detectors and the Auger Transistor under Strong Electric Field / Vladimir D. Kalganov ; Nina V. Mileshkina ; Elena V. Ostroumova ; Ekaterina A. Rogacheva |
| A Boron Doped Amorphous Silicon Thin-Film Bolometer for Long Wavelength Detection / A. Heredia-J ; A. Torres-J ; A. Jaramillo-N ; F.J. De la Hidalga-W ; M. Landa-V |
| Characterization of Sputter Deposited PbTe on Si (111) for Optoelectronic Applications / Alexey Jdanov ; Zinovi Dashevsky ; Joshua Pelleg ; Roni Shneck |
| Far-Infrared Magnetooptical Generalized Ellipsometry Determination of Free-Carrier Parameters in Semiconductor Thin Film Structures / Tino Hofmann ; Marius Grundmann ; Craig M. Herzinger ; Mathias Schubert ; Wolfgang Grill |
| Far-Infrared Dielectric Function and Phonon Modes of Spontaneously Ordered (Al[subscript x]Ga[subscript 1-x])[subscript 0.52]In[subscript 0.48]P / Volker Gottschalch |
| Electrodeposition of Cu[subscript 2]Se Thin Films by Electrochemical Atomic Layer Epitaxy (EC-ALE) / Raman Vaidyanathan ; Mkhulu K. Mathe ; Patrick Sprinkle ; Steve M. Cox ; Uwe Happek ; John L. Stickney |
| Optical Absorption of Large Band-Gap Sb[subscript x]Bi[subscript 1-x]I[subscript 3] Alloys / C. Persson ; R. Ahuja ; J. Souza de Almeida ; B. Johansson ; C.Y. An ; F.A. Ferreira ; N. Souza Dantas ; I. Pepe ; A. Ferreira da Silva |
| Intersubband Transitions in Proton Irradiated InGaAs/InAlAs Multiple Quantum Wells Grown on Lattice Matched InP Substrate / Qiaoying Zhou ; M.O. Manasreh ; B.D. Weaver ; M. Missous |
| Composition of [beta]FeSi[subscript 2] Thin-Films Grown by a Pulsed Laser Deposition Method / Shin-ichiro Uekusa ; Masahiro Yamamoto ; Keiichi Tsuchiya ; Noboru Miura |
| Native Point Defect Interactions in ZGP Crystals under Influence of e-Beam Irradiation / A.I. Gribenyukov ; G.A. Verozubova ; A.Yu. Trofimov ; A.W. Vere ; C.J. Flynn |
| Raman and Magneto Transport Studies of MBE Grown [beta]FeSi[subscript 2], [beta](Fe[subscript 1-x]Cr[subscript x])Si[subscript 2], and [beta](Fe[subscript 1-x]Co[subscript x])Si[subscript 2] / A. Srujana ; A. Wadhawan ; K. Srikala ; B.P. Gorman ; R.J. Cottier ; Wei Zhao ; C.L. Littler ; J.M. Perez ; T.D. Golding ; A.G. Birdwell ; W. Henrion ; M. Rebien ; P. Stauss ; R. Glosser |
| Design and Fabrication of a VCSEL With Graded Bragg Mirror Interfaces for Operation at 850 nm / Chichang Zhang ; Aris Christou |
| High Gain, Low Threshold Current GaInAsP Based VCSELS for Operation at 1.24 um / Zhuopeng Tan ; Yixin Li |
| Novel Resistance Reduction and Phase Changes of Contacts to n-Type InP by Rapid Thermal Annealing / J.S. Huang ; T. Nguyen ; N. Bar-Chaim ; C.B. Vartuli ; S. Anderson ; J. Shearer ; C. Fisher |
| Design of a 364 nm Electrically Pumped Multi-Quantum Well Continuous Wave Nitride Vertical Cavity Surface Emitting Laser / Shelia C. Luke ; Abhishek Motayed |
| DLTS Studies of Defects Produced in n-Type Silicon by Hydrogen Implantation at Low Temperature / Takahide Sugiyama ; Masayasu Ishiko ; Shigeki Kanazawa ; Yutaka Tokuda |
| Nanostructures |
| Carrier Recombination in InAs/GaAs Quantum Dot and GaInNAs/GaAs Quantum Well LEDs Emitting Near 1300 nm / A.J. Bennett ; L. Lofgren ; P.N. Stavrinou ; C. Roberts ; R. Murray ; G. Parry ; J.S. Roberts |
| Formation of Defects in MBE Re-Grown GaAs Films on GaAs/AlGaAs Heterostructures / M. Lamberti ; V. Tokranov ; R. Moore ; M. Yakimov ; A. Katsnelson ; S. Oktyabrsky |
| Interdiffusion in Semiconductor Quantum Dot Structures / P. Lever ; L. Fu ; M. Gal ; H.H. Tan |
| 1.5 [mu]m Range Self-Organized In[subscript 0.65]Ga[subscript 0.3]5As/In[subscript 0.52]Al[subscript 0.48]As Quantum Wire Structures Grown on (775)B-Oriented InP Substrates by Molecular Beam Epitaxy / K. Hyodo ; Y. Ohno ; H. Kanamori ; T. Kitada ; S. Shimomura ; S. Hiyamizu |
| Characterization of Metallic and Metal Oxide Nanoparticles Produced by Electrothermal-Chemical Synthesis / Kurt A. Schroder ; Dennis E. Wilson ; Kyoungjin Kim ; Henry E. Elliott Jr. |
| Innovative Materials and Devices |
| Characterization of AlInAsSb and AlGaInAsSb MEB-Grown Digital Alloys / Leslie G. Vaughn ; L. Ralph Dawson ; Huifang Xu ; Yingbing Jiang ; Luke F. Lester |
| Yellow-Green Emission for ETS-LEDs and Lasers Based on a Strained-InGaP Quantum Well Heterostructure Grown on a Transparent, Compositionally Graded AlInGaP Buffer / Lisa McGill ; Juwell Wu ; Eugene Fitzgerald |
| Trace Water Detection in Phosphine by Cavity Ring-Down Spectroscopy / Susan Y. Lehman ; Kris A. Bertness ; Joseph T. Hodges |
| Improved Device Performance of In[subscript 0.5]Ga[subscript 0.5]P/In[subscript 0.22]Ga[subscript 0.78]As/GaAs MOS p-HEMT Using a Selective Liquid Phase Oxidation / I-H. Kang ; J-W. Lee ; S-J. Kang ; S-J. Jo ; S-K. In ; H-J. Song ; J-H. Kim ; J-I. Song |
| Comparison of the Strain and Stress in Bonded and Epitaxial Gallium Arsenide on Silicon by Photoreflectance Spectroscopy Measurements / Spyros Gallis ; George Deligeorgis ; Alexandros Georgakilas ; Marin Alexe |
| Ti/Ni/Au/Diamond MIS Field Effect Transistors With TiO[subscript 2] Gate Dielectric / Yuhong Cai |
| Oxygen Incorporation into MBE Grown AlGaAs Layers / S. Naritsuka ; O. Kobayashi ; K. Mitsuda ; T. Maruyama ; T. Nishinaga |
| Electronic Properties of n-type Al[subscript x]Ga[subscript 1-x]As Alloys / H. Haratizadeh ; P.O. Holtz ; A.G. de Oliveria |
| Stability of Non-Hydrogenated and Hydrogenated P-Channel Polycrystalline Silicon Thin-Film Transistors / N.A. Hastas ; C.A. Dimitriadis ; G. Kamarinos |
| Graded-Band-Gap Semiconductors: The Possibilities for Improvement of p-n Junction Performance / Bogdan Sokolovskii ; Roman Yasnytskyi |
| MOCVD Growth and Characterization of GaInNAs/GaAs/InGaAs/GaAs Quantum Well Structures / Abdel-Rahman A. El-Emawy ; Hongjun Cao ; Noppadon Nuntawong ; Chiyu Liu ; Marek Osinski |
| Silicon CMOS BEOL Compatible Optical Waveguide Micro-Mirrors / Shom Ponoth ; Navnit Agarwal ; Peter Persans ; Joel Plawsky |
| Noise Sources in Polycrystalline Silicon Thin-Film Transistors / Il Ki Han ; Young Ju Park ; Woon Jo Cho ; Won Jun Choi ; Jungil Lee ; Alain Chovet ; Jean Brini |
| Changes in Structural and Optical Properties of CdS Thin Films During the Process of Chemical Bath Deposition / Wei Li ; Liang-huan Feng ; Ya-ping Cai ; Jing-quan Zhang ; Jia-gui Zheng ; Li-li Wu ; Bing Li ; Dao-lin Cai ; Wen-jian Len |
| Development of an On-Chip Semiconducting Readout For Subsurface Optical Data / William K. Loghry ; N.J. Ianno ; R.O. Dillon |
| 500[degree]C Formation of Poly-Si[subscript 1-x]Ge[subscript x] (x [greater than or equal] 0.5) on SiO[subscript 2] by Ion-Beam Stimulated Solid Phase Crystallization / Isao Tsunoda ; Hiroshi Kanno ; Atsushi Kenjo ; Taizoh Sadoh ; Masanobu Miyao |
| MOCVD Growth and Characterization of InNAs/GaAs Quantum Wells |
| Photoluminescence in UHV/CVD Tensile-Strained Si Type-II Quantum Wells on Bulk Crystal SiGe Substrates / S.R. Sheng ; N.L. Rowell ; S.P. McAlister |
| Photoluminescence of Ge Nanoclusters in Ion Implanted SiO[subscript 2] / J.M.J. Lopes ; F.C. Zawislak ; M. Behar ; P.F.P. Fichtner ; L. Rebohle ; W. Skorupa |
| Optical Properties of Al[subscript 0.70]Ga[subscript 0.30]As:Er,Yb / Isao Tanaka ; Tomoyuki Arai |
| Photoreflectance Study of Hydrogenated (InGa)(AsN)/GaAs Heterostructures / M. Geddo ; G. Guizzetti ; R. Pezzuto ; A. Polimeni ; M. Capizzi ; M. Bissiri ; G. Baldassarri ; Hoger von Hogersthal ; D. Gollub ; A. Forchel |
| Optical and EPR Study of Defects in Cadmium Germanium Arsenide / Lihua Bai ; Nanying Yang ; P.G. Schunemann ; S.D. Setzler ; T.M. Pollak |
| Effect of Pressure-Enhanced Single Step Annealing on the Silicon Photoluminescence / S. Binetti ; A. Le Donne ; V.V. Emtsev ; S. Pizzini |
| Mesoscopic Study of the Electronic Properties of Thin Polymer Films / Ricardo M. Ribeiro ; Marta M.D. Ramos ; A.M. Almeida ; Helena M.G. Correia ; Jaime Silva ; A.M. Stoneham |
| Lanthanide Doped Cubic Boron Nitride / U. Vetter ; T. Taniguchi ; U. Wahl ; J. Correia ; A. Muller ; C. Ronning ; H. Hofsass ; M. Dietrich ; ISOLED Collaboration |
| Growth and Characterization of Epitaxial Films of ZnGeP[subscript 2] / M.C. Ohmer ; N.C. Fernelius ; J.T. Goldstein |
| Detectors |
| Intersubband Transitions in InAs/AlSb Quantum Wells / J. Li ; K. Kolokolov ; C.Z. Ning ; D.C. Larraber ; G.A. Khodaparast ; J. Kono ; K. Ueda ; Y. Nakajima ; S. Sasa ; M. Inoue |
| Far Infrared Spectroscopy of In[subscript 0.53]Ga[subscript 0.47]As Quantum Wells on InP(100) / D.J. Lockwood ; P.J. Poole ; G. Yu |
| GaSb-Based Materials for Mid-Infrared Photodiodes Operating in the 0.9-2.55 [mu]m Spectral Range / I.A. Andreev ; E.V. Kunitsyna ; M.P. Mikhailova ; Yu.P. Yakovlev |
| Thermal Stability in HgCdTe IR Photodiodes / J.M. Dell ; C.A. Musca ; J. Antoszewski ; L. Faraone ; R. Pal |
| Intersubband Transitions in In[subscript x]Ga[subscript 1-x]As/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection / Clayton L. Workman ; Zhiming Wang ; Wenquan Ma ; Christi E. George ; R. Panneer Selvam ; Gregory J. Salamo ; Qiaoying Zhou|cM. Omar Manasreh |
| Spectral Response Modification of Quantum Well Infrared Photodetector by Quantum Well Intermixing / J.C. Shin ; W.J. Choi ; I.K. Han ; Y.J. Park ; J.I. Lee ; E.K. Kim ; H.J. Kim ; J.W. Choi |
| III-Nitride Materials and Devices |
| Preparation of Optoelectronic Devices Based on AIN/AlGaN Superlattices / M. Holtz ; G. Kipshidze ; A. Chandolu ; J. Yun ; B. Borisov ; V. Kuryatkov ; K. Zhu ; S.N.G. Chu ; S.A. Nikishin ; H. Temkin |
| Dilute Group III-AsN: Bonding of Nitrogen in GaInAsN and AlGaAsN on GaAs and Realization of Long Wavelength (2.3 [mu]m) GaInAsN QWs on InP / D. Serries ; T. Geppert ; K. Kohler ; P. Ganser ; J. Wagner |
| Low Temperature Photoluminescence Studies of Narrow Bandgap GaAsSbN Quantum Wells on GaAs / K.E. Waldrip ; E.D. Jones ; N.A. Modine ; F. Jalali ; J.F. Klem ; G.M. Peake |
| Interband Transitions in GaInNAs/GaAs Single Quantum Wells / D.J. Friedman ; W.Q. Ma ; C.L. Workman ; C.E. George ; G.J. Salamo |
| Influence of Low-Energy Electron Beam Irradiation on Defects in Activated Mg-Doped GaN / O. Gelhausen ; M.R. Phillips ; H.N. Klein ; E.M. Goldys |
| Electrical Isolation of p-Type GaAsN Epitaxial Layers by Ion Irradiation / Q. Gao ; J. Muller |
| The Compositional and Optical Characterizations of InGaAsN Alloy Semiconductor Grown by MOVPE / Sakuntam Sanorpim ; Fumihiro Nakajima ; Ryuji Katayama ; Kentaro Onabe ; Yashihiro Shiraki |
| Author Index |
| Subject Index |
| Preface |
| Materials Research Society Symposium Proceedings |
| Electronic Devices |
| Control of Indium Surface Segregation in GaAs Layer on InGaP Grown by MOVPE / Y. Fukushima ; Y. Nakano ; Y. Shimogaki |
| Lateral Epitaxial Overgrowth of InAs on (100) GaAs Substrates / Ganesan Suryanarayanan ; Anish A. Khandekar ; Brian E. Hawkins ; Thomas F. Kuech ; Susan E. Babcock |
| Epitaxial Praseodymium Oxide: A New High-K Dielectric / H.J. Osten ; E. Bugiel ; A. Fissel |
図書
Rapid prototyping technologies : symposium held December 3-5, 2002, Boston, Massachusetts, U.S.A.