State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia

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State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia / editors, E.B. Stokes ... [et al.] ; sponsoring divisions, Electronics, Sensor

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図書

出版情報:

Pennington, N.J. : Electrochemical Society, c2003

形態:

ix, 278 p. ; 24 cm

シリーズ名:

Proceedings / [Electrochemical Society] ; v. 2003-4 <BA01323290>

著者名:

Electrochemical Society. Meeting <DA03398898>

State-of-the-Art Program on Compound Semiconductors

Symposium on Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensord

Stokes, E. B.

Electrochemical Society. Electronics Division <DA0357072X>

Electrochemical Society. Sensor Division <DA09951067>

さらに 1 件

ISBN:

9781566773492 [1566773490]

書誌ID:

BA62545580

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注記:

"The combined 38th State-of-the-Art Program on Compound Semiconductors and 3rd Symposium on Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors is one of over fifty technical symposia at the 203rd Meeting of the Electrochemical Society, April 27, 2003 through May 2, 2003 in Paris, France"--on pref
Includes bibliographical references and indexes

言語:

英語

目次情報:

Preface

III-V Optoelectronics / Session 1：

Novel Waveguide Photodetectors on InP with Integrated Light Amplification / J. Piprek ; D. Pasquariello ; D. Lasaosa ; J.E. Bowers

Improvement of Kink Characteristics of 850nm AlGaAs/GaAs Implant Vertical Cavity Emitting Lasers Utilizing Silicon Implantation Induced Disordering / H.C. Kuo ; Fang-I Lai ; Tao-Hung Hsueh ; Ya-hsien Chang ; Wen-chun Shu ; Li-Hung Lai ; S.C Wang

Effect of Post-Oxidation Annealing on VCSEL Device Performance / N.C Das ; W. Chang

Low Voltage Operation Phototransistor with InGaP/AlGaAs/GaAs Composite Emitter / S.W. Tan ; W.T. Chen ; M.Y. Chu ; W.S. Lour

III-V Devices and Processing / Session 2：

Observation of Current Gain Collapse in Large-area HBT with Rectangular Emitter and Etched Base / M.-K. Tsai ; S.-W. Tan ; W.-S. Lour ; Y.-J. Yang

Characteristics of Sulfur and InGaP-passivated InGaP/GaAs Heterojunction Bipolar Transistors

Interconnect Copper Metallization of InGaP HBT's using WN[subscript x] as the Diffusion Barrier / Shang-Wen Chang ; Edward Yi Chang ; Cheng-Shih Lee

Solvent-affected Chemistry at GaAs/sulfide Solution Interface / Mikhail V. Lebedev ; Thomas Mayer ; Wolfram Jaegermann

InP Electrochemistry / Session 3：

Anodic Behavior of InP: Film Growth, Porous Structures, and Current Oscillations / D.N. Buckley ; C. O'Dwyer ; E. Harvey ; T. Melly ; M. Serantoni ; D. Sutton ; S.B. Newcomb

A Mechanistic Study of Anodic Formation of Porous InP

Growth of Anodic Oxides on n-InP Studied by Electrochemistry and Surface Analysis: Correlation between Oxidation Methods and Passivating Properties / N. Simon ; N.C. Quach ; A. Etchberry

Localized Photoetching of n-InP, at Open-circuit Potential / Catherine Debiemme-Chouvy ; Anne Quennoy ; Isabelle Gerard

Poster Session

Investigation of Defect Passivation in 4H-SiC using Hydrogen Plasma and Effect of Post-Annealing / Myung Yoon Um ; In Sang Jeon ; Da Il Eom ; Bum Seok Kim ; Ho Keun Song ; Hoon Joo Na ; Dae Hwan Kim ; Jae Kyeong Jeong ; Hyeong Joon Kim

HRTEM Study of SiC Buried Layer formed by C+ Implantation in Silicon / Yumei Xing ; Yuehui Yu ; Zixin Lin

(Photo-)Electrochemistry at n-GaN Grown on Sapphire and on Si: A Comparitive Study / I.M. Huygens ; K. Strubbe

MOCVD Growth of InP/InGaAlAs Distributed Bragg Reflectors / J.Y. Tsai ; T.C. Lu ; S.C. Wang

Very Low Temperature Growth of c-axis oriented ZnO Thin Film on Si Substrates / Hyoun Woo Kim ; Kwang Sik Kim ; Chongmu Lee

Fabrication and NO2 Surface Photo Voltage Sensor Properties of Nanoporous Tin-Silica Film / Brian Yuliarto ; HaoShen Zhou ; Takeo Yamada ; Itaru Honma ; Keisuke Asai

Emerging Materials / Session 4：

Man-made Quantum Structures: From Superlattices to Quantum Dots / Raphael Tsu

Effects of Composition and Layer Thickness on the Magnetic and Structural Characteristics of GaMnN / G.T. Thaler ; M. Overberg ; R. Frazier ; C.R. Abernathy ; S.J. Pearton ; F. Ren ; Y.D. Park ; R. Rairigh ; J. Kelly ; J.S. Lee ; N. Theodoropoulou ; A.F. Hebard|p141

Diamond--the Next Generation Material for High Power Electronics? / A. Aleksov ; M. Schreck ; P. Schmid ; E. Kohn

III-Nitride Light Emitting Diodes / Session 5：

Deep Ultraviolet Light Emitting Diodes using AlGaN Quantum Well Active Region / M. Asif Khan ; Maxim Shatalov ; Vinod Adivarahan ; Jain Ping Zhang ; Ashay Chitnis ; Grigory Simin ; Jinwei Yang

Dramatically Improved Current Spreading in UV LED's via Si Delta-doping in the n-AlGaN Cladding Layer / S.F. LeBoeuf ; X.A. Cao ; L.B. Rowland ; J.J. Flynn ; G.R. Brandes

Carrier Capture and Recombination at Localized States in InGaN/GaN Light-Emitting Diodes / J.L. Garrett ; S.D. Arthur ; D.W. Merfeld

Wide Bandgap Materials and Electronic Devices / Session 6：

Instabilities in GaN based FET Structures--Nature and Alternative Structures / M. Neuburger ; I. Daumiller ; A. Krtschil ; A. Krost ; J. Van Nostrand ; T. Jenkins

AlGaN Power Rectifiers / J. Kim ; K. Baik ; B.P. Gila ; Y. Irokawa ; J.-I. Chyi ; S.S. Park ; Y.J. Park

Physics of Electron Injection-Induced Effects in III-Nitrides / Leonid Chernyak ; William Burdett

DC Characteristics of AlGaN/GaN Heterostructure Field-effect Transistors on Free-Standing GaN Substrates / B. Luo ; C.-C. Pan ; G.-T. Chen ; J.I. Chyi ; Y.J Park

Innovative Substrate Solutions for Wide Band Gap Materials: the Smart Cut Approach / F. Letertre ; N. Daval ; F. Templier ; L. DiCioccio ; C. Richtarch ; B. Faure ; A.M. Cartier ; I. Matko

Optical Properties of III-Nitride Materials / Session 7：

Microcathodoluminescence Characterization of III-Nitride Heterojunctions and Devices / L.J. Brillson ; G.H. Jessen ; S.H. Goss ; X.L. Sun ; S.T. Bradley ; B.D. White ; P.E. Smith ; T.E. Levin ; A.P. Young ; D.C. Look ; J.E. Van Nostrand ; G.D. Via ; J.K. Gillespie ; R.W. Dettmer ; J.S. Sewell ; R. Fitch

New Spectroscopic Data of Erbium Ions in GaN Thin Films / F. Pelle ; F. Auzel ; J.M. Zavada ; D.S. Lee ; A.J. Steckl

Spectroscopic Ellipsometry Applied to the Characterization of GaN and AlGaN/GaN Heterostructures / P. Boher ; S. Bourtault ; J.P. Piel

Infrared Photocurrent Spectroscopy of Epitaxial III-Nitride Materials / Edward B. Stokes ; Steven F. LeBoeuf

Fabrication and Characterization of GaN Nanorods / Chang-Chin Yu ; Jung-Wai Chang ; Chia-Feng Lin

Subject Index

Preface

III-V Optoelectronics / Session 1：

Novel Waveguide Photodetectors on InP with Integrated Light Amplification / J. Piprek ; D. Pasquariello ; D. Lasaosa ; J.E. Bowers

Effect of Post-Oxidation Annealing on VCSEL Device Performance / N.C Das ; W. Chang

Low Voltage Operation Phototransistor with InGaP/AlGaAs/GaAs Composite Emitter / S.W. Tan ; W.T. Chen ; M.Y. Chu ; W.S. Lour

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