Fundamentals of semiconductors : physics and materials properties

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Fundamentals of semiconductors : physics and materials properties / Peter Y. Yu, Manuel Cardona

版:

3rd, rev. and enl. ed., 3rd corrected printing

資料種別:

図書

出版情報:

Berlin : Springer Verlag, 2005, c2001

形態:

xviii, 639 p. ; 25 cm

著者名:

ISBN:

9783540254706 [3540254706]

書誌ID:

BA72466800

子書誌情報

フルテキスト

所蔵情報

他の版・巻

Fundamentals of semiconductors : physics and materials properties. 3rd, rev. and enl. ed.
Peter Y. Yu, Manuel Cardona , Springer Verlag , c2001

Fundamentals of semiconductors : physics and materials properties. 2nd updated ed (hardcover)
Peter Y. Yu, Manuel Cardona , Springer Verlag , 1999

書誌詳細

注記:

Includes bibliographical references (p. [583]-617) and index

主題:

Semiconductors; Semiconductors--Materials

言語:

英語

目次情報:

Introduction / 1：

A Survey of Semiconductors / 1.1：

Elemental Semiconductors / 1.1.1：

Binary Compounds / 1.1.2：

Oxides / 1.1.3：

Layered Semiconductors / 1.1.4：

Organic Semiconductors / 1.1.5：

Magnetic Semiconductors / 1.1.6：

Other Miscellaneous Semiconductors / 1.1.7：

Growth Techniques / 1.2：

Czochralski Method / 1.2.1：

Bridgman Method / 1.2.2：

Chemical Vapor Deposition / 1.2.3：

Molecular Beam Epitaxy / 1.2.4：

Liquid Phase Epitaxy / 1.2.5：

Summary

Electronic Band Structures / 2：

Quantum Mechanics / 2.1：

Translational Symmetry and Brillouin Zones / 2.2：

A Pedestrian's Guide to Group Theory / 2.3：

Definitions and Notations / 2.3.1：

Symmetry Operations of the Diamond and Zinc-Blende Structures / 2.3.2：

Representations and Character Tables / 2.3.3：

Some Applications of Character Tables / 2.3.4：

Empty Lattice or Nearly Free Electron Energy Bands / 2.4：

Nearly Free Electron Band Structure in a Zinc-Blende Crystal / 2.4.1：

Nearly Free Electron Energy Bands in Diamond Crystals / 2.4.2：

Band Structure Calculation by Pseudopotential Methods / 2.5：

Pseudopotential Form Factors in Zinc-Blende- and Diamond-Type Semiconductors / 2.5.1：

Empirical and Self-Consistent Pseudopotential Methods / 2.5.2：

The kċp Method of Band-Structure Calculations / 2.6：

Effective Mass of a Nondegenerate Band Using the kċp Method / 2.6.1：

Band Dispersion near a Degenerate Extremum: Top Valence Bands in Diamondand Zinc-Blende-Type Semiconductors / 2.6.2：

Tight-Binding or LCAO Approach to the Band Structure of Semiconductors / 2.7：

Molecular Orbitals and Overlap Parameters / 2.7.1：

Band Structure of Group-IV Elements by the Tight-Binding Method / 2.7.2：

Overlap Parameters and Nearest-Neighbor Distances / 2.7.3：

Problems

Vibrational Properties of Semiconductors, and Electron-Phonon Interactions / 3：

Phonon Dispersion Curves of Semiconductors / 3.1：

Models for Calculating Phonon Dispersion Curves of Semiconductors / 3.2：

Force Constant Models / 3.2.1：

Shell Model / 3.2.2：

Bond Models / 3.2.3：

Bond Charge Models / 3.2.4：

Electron-Phonon Interactions / 3.3：

Strain Tensor and Deformation Potentials / 3.3.1：

Electron-Acoustic-Phonon Interaction at Degenerate Bands / 3.3.2：

Piezoelectric Electron-Acoustic-Phonon Interaction / 3.3.3：

Electron-Optical-Phonon Deformation Potential Interactions / 3.3.4：

Frohlich Interaction / 3.3.5：

Interaction Between Electrons and Large-Wavevector Phonons: Intervalley Electron-Phonon Interaction / 3.3.6：

Electronic Properties of Defects / 4：

Classification of Defects / 4.1：

Shallow or Hydrogenic Impurities / 4.2：

Effective Mass Approximation / 4.2.1：

Hydrogenic or Shallow Donors / 4.2.2：

Donors Associated with Anisotropic Conduction Bands / 4.2.3：

Acceptor Levels in Diamond-and Zinc-Blende-Type Semiconductors / 4.2.4：

Deep Centers / 4.3：

Green's Function Method for Calculating Defect Energy Levels / 4.3.1：

An Application of the Green's Function Method: Linear Combination of Atomic Orbitals / 4.3.2：

Another Application of the Green's Function Method: Nitrogen in GaP and Ga AsP Alloys / 4.3.3：

Final Note on Deep Centers / 4.3.4：

Electrical Transport / 5：

Quasi-Classical Approach / 5.1：

Carrier Mobility for a Nondegenerate Electron Gas / 5.2：

Relaxation Time Approximation / 5.2.1：

Nondegenerate Electron Gas in a Parabolic Band / 5.2.2：

Dependence of Scattering and Relaxation Times on Electron Energy / 5.2.3：

Momentum Relaxation Times / 5.2.4：

Temperature Dependence of Mobilities / 5.2.5：

Modulation Doping / 5.3：

High-Field Transport and Hot Carrier Effects / 5.4：

Velocity Saturation / 5.4.1：

Negative Differential Resistance / 5.4.2：

Gunn Effect / 5.4.3：

Magneto-Transport and the Hall Effect / 5.5：

Magneto-Conductivity Tensor / 5.5.1：

Hall Effect / 5.5.2：

Hall Coefficient for Thin Film Samples (van der Pauw Method) / 5.5.3：

Hall Effect for a Distribution of Electron Energies / 5.5.4：

Optical Properties I / 6：

Macroscopic Electrodynamics / 6.1：

Digression: Units for the Frequency of Electromagnetic Waves / 6.1.1：

Experimental Determination of Optical Constants / 6.1.2：

Kramers-Kronig Relations / 6.1.3：

The Dielectric Function / 6.2：

Experimental Results / 6.2.1：

Microscopic Theory of the Dielectric Function / 6.2.2：

Joint Density of States and Van Hove Singularities / 6.2.3：

Van Hove Singularities in ϵ_i / 6.2.4：

Direct Absorption Edges / 6.2.5：

Indirect Absorption Edges / 6.2.6：

""""Forbidden"""" Direct Absorption Edges / 6.2.7：

Excitons / 6.3：

Exciton Effect at M₀ Critical Points / 6.3.1：

Absorption Spectra of Excitons / 6.3.2：

Exciton Effect at M₁ Critical Points or Hyperbolic Excitons / 6.3.3：

Exciton Effect at M₃ Critical Points / 6.3.4：

Phonon-Polaritons and Lattice Absorption / 6.4：

Phonon-Polaritons / 6.4.1：

Lattice Absorption and Reflection / 6.4.2：

Multiphonon Lattice Absorption / 6.4.3：

Dynamic Effective Ionic Charges in Heteropolar Semiconductors / 6.4.4：

Absorption Associated with Extrinsic Electrons / 6.5：

Free-Carrier Absorption in Doped Semiconductors / 6.5.1：

Absorption by Carriers Bound to Shallow Donors and Acceptors / 6.5.2：

Modulation Spectroscopy / 6.6：

Frequency Modulated Reflectance and Thermoreflectance / 6.6.3：

Piezoreflectance / 6.6.4：

Electroreflectance (Franz-Keldysh Effect) / 6.6.5：

Photoreflectance / 6.6.6：

Reflectance Difference Spectroscopy / 6.6.7：

Optical Properties II / 7：

Emission Spectroscopies / 7.1：

Band-to-Band Transitions / 7.1.1：

Free-to-Bound Transitions / 7.1.2：

Donor-Acceptor Pair Transitions / 7.1.3：

Excitons and Bound Excitons / 7.1.4：

Luminescence Excitation Spectroscopy / 7.1.5：

Light Scattering Spectroscopies / 7.2：

Macroscopic Theory of Inelastic Light Scattering by Phonons / 7.2.1：

Raman Tensor and Selection Rules / 7.2.2：

Experimental Determination of Raman Spectra / 7.2.3：

Microscopic Theory of Raman Scattering / 7.2.4：

A Detour into the World of Feynman Diagrams / 7.2.5：

Brillouin Scattering / 7.2.6：

Experimental Determination of Brillouin Spectra / 7.2.7：

Resonant Raman and Brillouin Scattering / 7.2.8：

Photoelectron Spectroscopy / 8：

Photoemission / 8.1：

Angle-Integrated Photoelectron Spectra of the Valence Bands / 8.1.1：

Angle-Resolved Photoelectron Spectra of the Valence Bands / 8.1.2：

Core Levels / 8.1.3：

Inverse Photoemission

Surface Effects / 8.2：

Surface States and Surface Reconstruction / 8.3.1：

Surface Energy Bands / 8.3.2：

Fermi Level Pinning and Space Charge Layers / 8.3.3：

Effect of Quantum Confinement on Electrons and Phonons in Semiconductors / 9：

Quantum Confinement and Density of States / 9.1：

Quantum Confinement of Electrons and Holes / 9.2：

Semiconductor Materials for Quantum Wells and Superlattices / 9.2.1：

Classification of Multiple Quantum Wells and Superlattices / 9.2.2：

Confinement of Energy Levels of Electrons and Holes / 9.2.3：

Some Experimental Results / 9.2.4：

Phonons in Superlattices / 9.3：

Phonons in Superlattices: Folded Acoustic and Confined Optic Modes / 9.3.1：

Folded Acoustic Modes: Macroscopic Treatment / 9.3.2：

Confined Optical Modes: Macroscopic Treatment / 9.3.3：

Electrostatic Effects in Polar Crystals: Interface Modes / 9.3.4：

Raman Spectra of Phonons in Semiconductor Superlattices / 9.4：

Raman Scattering by Folded Acoustic Phonons / 9.4.1：

Raman Scattering by Confined Optical Phonons / 9.4.2：

Raman Scattering by Interface Modes / 9.4.3：

Macroscopic Models of Electron-LO Phonon (Fröhlich) Interaction in Multiple Quantum Wells / 9.4.4：

Electrical Transport: Resonant Tunneling / 9.5：

Resonant Tunneling Through a Double-Barrier Quantum Well / 9.5.1：

I-V Characteristics of Resonant Tunneling Devices / 9.5.2：

Quantum Hall Effects in Two-Dimensional Electron Gases / 9.6：

Landau Theory of Diamagnetism in a Three-Dimensional Free Electron Gas / 9.6.1：

Magneto-Conductivity of a Two-Dimensional Electron Gas: Filling Factor / 9.6.2：

The Experiment of von Klitzing, Pepper and Dorda / 9.6.3：

Explanation of the Hall Plateaus in the Integral Quantum Hall Effect / 9.6.4：

Concluding Remarks / 9.7：

Appendix: Pioneers of Semiconductor Physics Remember

Ultra-Pure Germanium: From Applied to Basic Research or an Old Semiconductor Offering New Opportunities / Eugene E. Haller

Two Pseudopotential Methods: Empirical and Ab Initio / Marvin L. Cohen

The Early Stages of Band-Structures Physics and Its Struggles for a Place in the Sun / Conyers Herring

Cyclotron Resonance and Structure of Conduction and Valence Band Edges in Silicon and Germanium / Charles Kittel

Optical Properties of Amorphous Semiconductors and Solar Cells / Jan Tauc

Optical Spectroscopy of Shallow Impurity Centers / Elias Burstein

On the Prehistory of Angular Resolved Photoemission / Neville V. Smith

The Discovery and Very Basics of the Quantum Hall Effect / Klaus von Klitzing

The Birth of the Semiconductor Superlattice / Leo Esaki

References

Subject Index

Table of Fundamental Physical Constants (Inside Front Cover)

Table of Units (Inside Back Cover)

Introduction / 1：

A Survey of Semiconductors / 1.1：

Elemental Semiconductors / 1.1.1：

Binary Compounds / 1.1.2：

Oxides / 1.1.3：

Layered Semiconductors / 1.1.4：

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