| Preface |
| Committees |
| Sponsors and Session Chairs |
| Doping Processes in Semiconductors |
| Germanium...The Semiconductor of Tomorrow! / A. R. Peaker ; A. Satta ; V. P. Markevich ; E. Simoen ; B. Hamilton |
| The Role of Ion Beam Technology in the Development of Integrated Optical Monitors Suitable for Applications in Silicon Photonics / A. P. Knights ; J. D. B. Bradley ; P. J. Foster ; S. H. Gou ; P. E. Jessop |
| Influence of Energy Contamination at S/D-Extension Dopant Implantation Using Ultra Fast Annealing / M. Herden ; D. Gehre ; T. Feudel ; L. Herrmann |
| Formation of Ultrashallow Junctions Less than 10nm with the Combination of Low Energy B Ion Implantation and Laser Annealing / R. Yamada ; S. Seto ; S. Sato ; Y. Tanaka ; S. Matumoto ; T. Suzuki ; G. Fuse ; T. Kudo ; S. Sakuragi |
| Impact of Fluorine Co-Implant on Boron Diffusion during Non-Melt Laser Annealing / T. Noda ; S. Felch ; V. Parihar ; C. Vrancken ; T. Janssens ; H. Bender ; B. Van Daele ; W. Vandervorst |
| Characterization of B[subscript 2]H[subscript 6] Plasma Doping for Converted p[superscript +] Poly-Si Gate / J.-G. Oh ; J. K. Lee ; S. H. Hwang ; H. J. Cho ; Y. S. Sohn ; D. S. Sheen ; S. H. Pyi ; S. W. Lee ; S. H. Hahn ; Y. B. Jeon ; Z. Fang ; V. Singh |
| Fluorine Profile Distortion upon Annealing by the Presence of a CVD Grown Boron Box / P. Lopez ; L. Pelaz ; R. Duffy ; P. Meunier-Beillard ; K. van der Tak ; F. Roozeboom ; G. Maas |
| Deactivation of Low Energy Boron Implants into Preamorphised Si after Non-Melt Laser Annealing with Multiple Scans / J. A. Sharp ; N. E. B. Cowern ; R. P. Webb ; D. Giubertoni ; S. Gennaro ; M. Bersani ; M. A. Foad ; K. J. Kirkby |
| Co-Implantation for 45 nm PMOS and NMOS Source-Drain Extension Formation: Device Characterisation Down to 30 nm Physical Gate Length / E. J. H. Collart ; B. J. Pawlak ; E. Augendre ; S. Severi ; P. Absil ; R. Scheutelkamp |
| Control of Phosphorus Transient Enhanced Diffusion Using Co-Implantation / A. Vanderpool ; A. Budrevich ; M. Taylor |
| Integration of Advanced Source and Drain Extension Process Using Carbon/Fluorine Co-Implants and Spike Anneal in 65nm PMOS Devices / C. I. Li ; H. Y. Wang ; C. C. Chien ; M. Chain ; C. L. Yang ; S. F. Tzou ; H. Graoui ; R. Ting |
| Controlling Dopant Diffusion and Activation through Surface Chemistry / K. Dev ; C. T. M. Kwok ; R. Vaidyanathan ; R. D. Braatz ; E. Seebauer |
| Strain-Enhanced Activation of Sb Ultrashallow Junctions / N. S. Bennett ; L. O'Reilly ; A. J. Smith ; R. M. Gwilliam ; P. J. McNally ; B. J. Sealy |
| Phosphorus Implant for S/D Extension Formation: Diffusion and Activation Study after Spacer and Spike Anneal / S. H. Yeong ; B. Colombeau ; F. Benistant ; M. P. Srinivasan ; C. P. A. Mulcahy ; P. S. Lee ; L. Chan |
| The Concept of LDSI (Locally-Differentiated-Scanning Ion Implantation) for the Fine Threshold Voltage Control in Nano-Scale FETs / M.-Y. Lee ; S. W. Jin ; S. K. Na ; K. B. Rouh ; Y. S. Joung ; Y. J. Ki ; I. K. Han ; Y. W. Song ; S. W. Park |
| Time Dependence Study of Hydrogen-Induced Defects in Silicon during Thermal Anneals / S. Personnic ; A. Tauzin ; K. K. Bourdelle ; F. Leterte ; N. Kernevez ; F. Laugier ; N. Cherkashin ; A. Claverie ; R. Fortunier |
| Layer Transfer of SOI Structures Using a Pre-Stressed Bonding Layer / L. Vorrada ; N. Cheung |
| Optimal Preamorphization Conditions for the Formation of Highly Activated Ultra Shallow Junctions in Silicon-On-Insulator / J. J. Hamilton |
| Ion Implantation: A World of Innovations / M. Bruel |
| Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants / R. Gwilliam ; M. Barozzi |
| Effects of Hydrogen Atoms on Redistribution of Implanted Boron Atoms in Silicon during Annealing / K. Yokota ; S. Nakase ; F. Miyashita |
| Investigation of Amorphous Layer Formation Using Applied QUANTUM X Single Wafer and QUANTUM Batch Implanter / R. Doherty ; B. McComb ; Y. C. Cheng |
| High Dopant Activation and Low Damage P+ USJ Formation / J. Borland ; S. Shishiguchi ; A. Mineji ; W. Krull ; D. Jacobson ; M. Tanjyo ; W. Lerch ; S. Paul ; J. Gelpey ; S. McCoy ; J. Venturini ; M. Current ; V. Faifer ; R. Hillard ; M. Benjamin ; T. Walker ; A. Buczkowski ; Z. Li ; J. Chen |
| A Study of Carbon Effects in Implantation Process for Non-Silicide Contact Formation / T. H. Huh ; S. Kim ; G. J. Ra ; R. N. Reece ; S. I. Kondratenko ; Y. S. Kim ; K. I. Shin ; W. H. Jeon |
| Pre-Annealing Effects of n[superscript +]/p and p[superscript +]/n Junction Formed by Plasma Doping (PLAD) and Laser Annealing / S. Heo ; S. Baek ; D. Lee ; M. Hasan ; H. Hwang |
| Spike Annealing of Shallow Arsenic and Phosphorous Implants in Different Gaseous Ambient / D. Bolze |
| The Effect of Flash Annealing on the Electrical Properties of Indium/Carbon Co-Implants in Silicon / J. Foggiato ; W. S. Yoo ; M. Anderle |
| Local Arsenic Structure in Shallow Implants in Si Following SPER: An EXAFS and MEIS Study / G. Pepponi ; R. Grisenti ; M. Werner ; J. A. Van Den Berg |
| Well Design in a Bulk CMOS Technology with Low Mask Count / M. P. M. Jank ; C. Kandziora ; L. Frey ; H. Ryssel |
| Boron Redistribution during Crystallization of Phosphorous-Doped Amorphous Silicon / R. Simola ; D. Mangelinck ; A. Portavoce ; J. Bernardini ; P. Fornara |
| Ultra-Shallow Junctions Formed by Sub-Melt Laser Annealing / S. B. Felch ; A. Falepin ; T. Hoffman ; F. Nouri ; R. Schreutelkamp |
| Defect Behavior in Bf[subscript 2] Implants for S/D Applications as a Function of Ion Beam Characteristics / N. Cagnat ; C. Laviron ; N. Auriac ; J. Liu ; S. Mehta ; L. Frioulaud ; D. Mathiot |
| Impact of Dose Rate Effects and Damage Engineering On Device Performance / K. Shim ; Y. Hwang ; Y. Lee ; J. An ; S. Ryu ; S. Hahn ; C. Cho ; N. Hur ; B. Guo ; Y. Erokhin |
| Germanium Ion Implantation to Improve Crystallinity during Solid Phase Epitaxy and the Effect of AMU Contamination / K. S. Lee ; D. H. Yoo ; G. H. Son ; C. H. Lee ; J. H. Noh ; J. J. Han ; Y. S. Yu ; Y. W. Hyung ; J. K. Yang ; D. G. Song ; T. J. Lim ; Y. K. Kim|cS. C. Lee ; H. D. Lee ; J. T. Moon |
| Cluster Implantation and Doping |
| 20 Years History of Fundamental Research on Gas Cluster Ion Beams, and Current Status of the Application to Industry / I. Yamada |
| Dose Retention Effects in Atomic Boron and ClusterBoron[Trademark] (B[subscript 18]H[subscript 22]) Implant Processes / M. A. Harris ; L. Rubin ; D. Tieger ; V. Venezia ; T. J. Hsieh ; J. Miranda |
| Universal Ion Source[Trademark] for Cluster and Monomer Implantation / T. N. Horsky |
| Investigation of Converted p[superscript +] Poly-Si Gate Formed by B[subscript 18]H[subscript X superscript +] Cluster Ion Implantation / S.-H. Hwang ; D. S. Kim ; Y. H. Joo ; J. G. Oh ; T. W. Jung ; W. A. Krull ; H. T. Cho |
| A Beam Line System for a Commercial Borohydride Ion Implanter / H. F. Glavish ; D. C. Jacobson ; F. Sinclair ; N. Hamamoto ; N. Nagai ; M. Naito |
| Ultrashallow P[superscript +]/n Junction Formed by B[subscript 18]H[subscript 22 superscript +] Ion Implantation and Excimer Laser Annealing |
| Productivity Enhancements for Shallow Junctions and DRAM Applications Using Infusion Doping / J. Hautala ; M. Gwinn ; W. Skinner ; Y. Shao |
| A Vaporizer for Decaborane and Octadecaborane / D. Adams ; G. Gilchrist ; R. Milgate ; J. Sweeney ; P. Marganski |
| Simplifying the 45nm SDE Process with ClusterBoron[Registered] and ClusterCarbon[Trademark] Implantation / B. Haslam ; K. Verheyden ; K. Funk |
| Implantation Characteristics by Boron Cluster Ion Implantation / T. Nagayama ; S. Umisedo ; T. Aoyama |
| Sputtering and Chemical Modification of Solid Surfaces by Water Cluster Ion Beams / G. H. Takaoka ; K. Nakayama ; D. Takeda ; M. Kawashita |
| Cross-Sectional TEM Observations of Si Wafers Irradiated with Gas Cluster Ion Beams / H. Isogai ; E. Toyoda ; T. Senda ; K. Izunome ; K. Kashima ; N. Toyoda |
| Boron Beam Performance and in-situ Cleaning of the ClusterIon[Trademark] Source / G. F. R. Gilchrist ; R. W. Milgate III |
| P-Type Gate Electrode Formation Using B[subscript 18]H[subscript 22] Ion Implantation / D. Henke ; F. Jakubowski ; J. Deichler ; V. C. Venezia ; M. S. Ameen |
| ClusterBoron[Trademark] Implants on a High Current Implanter / D. R. Tieger ; W. DiVergilio ; E. C. Eisner ; M. Harris ; W. P. Reynolds |
| Cluster Size Effects of Gas Cluster Ion Beams on Surface Modification |
| High-Speed Nano-Processing with Cluster Ion Beams / T. Seki ; J. Matsuo |
| Characterization of Molecular Clusters in the Supersonic Gas Jet / T. Kagawa ; F. Sato ; Y. Kato ; Y. Ito ; T. Iida |
| PIII and Plasma Doping |
| PLAsma Doping for P+ Junction Formation in 90 nm NOR Flash Memory Technology / D. Bigarella ; V. Soncini ; D. Raj ; S. Walther |
| Deep Trench Doping by Plasma Immersion Ion Implantation in Silicon / S. Nizou ; V. Vervisch ; H. Etienne ; M. Ziti ; F. Torregrosa ; L. Roux ; M. Roy ; D. Alquier |
| Nitrogen Plasma Ion Implantation of Al and Ti Alloys in the High Voltage Glow Discharge Mode / R. M. Oliveira ; M. Ueda ; J. O. Rossi ; H. Reuther ; C. M. Lepienski ; A. F. Beloto |
| Plasma Immersion Ion Implantation with a 4kV/10kHz Compact High Voltage Pulser / G. Silva |
| Effects of Ion Energy on Nitrogen Plasma Immersion Ion Implantation in UHMWPE Polymer through a Metal Grid / W. A. Vilela |
| Modified Phasor-Particle Model of Treating a Blocking Capacitor as a Phasor Element in Simulation of Plasma Coupling with an External Auto-Matching Network / D. T. K. Kwok ; P. K. Chu |
| B[subscript 2]H[subscript 6] PLAD Doped PMOS Device Performance / T. Miller ; E. Winder ; H. Persing ; E. Arevalo ; A. Gupta ; T. Parrill ; S. Qin ; A. McTeer |
| Plasma Immersion Ion Implantation Applied to P+N Junction Solar Cells / D. Barakel ; L. Ottaviani ; M. Pasquinelli |
| Ion Behaviour in Pulsed Plasma Regime by Means of Time-Resolved Energy Mass Spectroscopy (TREMS) Applied to an Industrial Radiofrequency Plasma Immersion Ion Implanter: PULSION[Registered] / M. Carrere ; V. Kaeppelin |
| Boron Ion Implantation into Silicon by Use of the Boron Vacuum-Arc Plasma Generator / J. M. Williams ; C. C. Klepper ; D. J. Chivers ; R. C. Hazelton ; J. J. Moschella ; M. D. Keitz |
| Materials-Novel Techniques and Applications |
| Micro-Patterned Porous Silicon Using Proton Beam Writing / M. B. H. Breese ; D. Mangaiyarkarasi ; E. J. Teo ; A. A. Bettiol ; D. Blackwood |
| Grazing Incidence Angle X-Ray Diffraction of Implanted Stainless Steel: Comparison between Simulated Data and Experimental Data / J. Dudognon ; M. Vayer ; A. Pineau ; R. Erre |
| Investigation of the Impact on Device Parameters of Fluorine Enhanced Oxide in a Power Trench MOSFET / J. H. Rice ; C.-T. Wu |
| Rare Gas Ion Implanted-Silicon Template for the Growth of Relaxed Si[subscript 1-x]Ge[subscript x]/Si (100) / G. Regula ; M. Raissi ; J.-L. Lazzari ; F. Chevrier ; N. Burle ; E. Ntsoenzok |
| High Temperature Implantation of Aluminum in 4H Silicon Carbide / M. Rambach ; A. J. Bauer |
| Annealing of TiO[subscript 2] Films Deposited on Si by Irradiating Nitrogen Ion Beams / Y. Yano |
| Thermal Diffusion Barrier for Ag Atoms Implanted in Silicon Dioxide Layer on Silicon Substrate and Monolayer Formation of Nanoparticles / H. Tsuji ; N. Arai ; N. Gotoh ; T. Minotani ; T. Ishibashi ; T. Okumine ; K. Adachi ; H. Kotaki ; Y. Gotoh ; J. Ishikawa |
| Water Splitting and Hydrogen Emitting Catalytic Function of Hydrogen-Implanted Oxide Ceramics Studied Using Ion Beam Technology / K. Morita ; B. Tsuchiya ; S. Nagata ; K. Katahira ; M. Yoshino ; J. Yuhara ; Y. Arita ; T. Ishijima ; H. Sugai |
| Structural Changes in Polymer Films by Fast Ion Implantation / M. A. Parada ; R. A. Minamisawa ; C. Muntele ; I. Muntele ; A. De Almeida ; D. Ila |
| Hydrogen Ion Implantation Mechanism in GaAs-on-Insulator Wafer Formation by Ion-Cut Process / H. J. Woo ; H. W. Choi ; G. D. Kim ; J. K. Kim ; W. Hong ; H. R. Lee |
| High Dose Hydrogen Implant Blistering Effects as a Function of Selected Implanter and Substrate Conditions / R. Eddy ; C. Hudak ; P. Bettincurt ; S. Delgado |
| Germanium Nanoparticle Formation into Thin SiO[subscript 2] Films by Negative Ion Implantation and Their Electric Characteristics / T. Yanagitani ; M. Harada ; T. Satoh ; H. Ohnishi |
| Size Analysis of Ethanol Cluster Ions and Their Sputtering Effects on Solid Surfaces / T. Okada |
| Tuning of Etching Rate by Implantation: Silicon, Polysilicon and Oxide / R. Charavel ; J.-P. Raskin |
| The Influence of Ion Implantation on Cell Attachment to Glass Polymeric Carbon / R. Zimmerman ; I. Gurhan ; F. Ozdal-Kurt ; B. H. Sen ; M. Rodrigues |
| Chicane Deceleration-An Innovative Energy Contamination Control Technique in Low Energy Ion Implantation / N. White ; C. Mulcahy ; S. Biswas |
| Characterisation of the Beam Plasma in High Current, Low Energy Ion Beams for Implanters / J. Fiala ; D. G. Armour ; J. A. van den Berg ; A. J. T. Holmes ; R. D. Goldberg ; E. H. J. Collart |
| Next Generation Medium Current Product: VIISta 900XP / A. Renau |
| Implant Angle Control on Optima MD / R. D. Rathmell ; B. Vanderberg ; A. M. Ray ; D. E. Kamenitsa ; K. Wu |
| Process Transferability from a Spot Beam to a Ribbon Beam Implanter: CMOS Device Matching / Z. Chalupa ; K.-H. Shim ; H. Lendzian |
| Application of Stencil Mask Ion Implantation Technology to Power Semiconductors / T. Nishiwaki ; H. Saito ; K. Hamada ; K. Tonari ; T. Nishihashi |
| Ion Implanter Cross Contamination and Maintenance Safety Considerations with High Dose Phosphorus / B. Ostrowski ; M. H. Yang ; D. Huntington |
| Source Life Improvement for Germanium Implant / A. Allen ; P. Banks |
| Ion Sources for High and Low Energy Extremes of Ion Implantation / A. Hershcovitch ; V. A. Batalin ; A. S. Bugaev ; V. I. Gushenets ; B. M. Johnson ; A. A. Kolomiets ; G. N. Kropachev ; R. P. Kuibeda ; T. V. Kulevoy ; I. V. Litovko ; E. S. Masunov ; E. M. Oks ; V. I. Pershin ; S. V. Petrenko ; S. M. Polozov ; H. J. Poole ; I. Rudskoy ; D. N. Seleznev ; P. A. Storozhenko ; A. Ya. Svarovski ; G. Yu. Yushkov |
| An Electron Cyclotron Resonance Ion Source with Cylindrically Comb-Shaped Magnetic Field Configuration / H. Sasaki ; T. Asaji ; T. Kubo |
| Advantages of Dual Magnet Ribbon Beam Architecture for Particle Control in Single Wafer High Current Implant / C. Campbell ; G. Redinbo ; J. Blake ; P. Kellerman ; E. Moore ; N. Variam |
| Optimized Autotuning for Single Wafer High-Current and Medium-Current Implanters / J. T. Scheuer ; A. Cucchetti ; M. Welsch ; W. Callahan ; K. Luey ; J. C. Olson |
| Backing Up Medium Current Implanters Using Single Wafer High Energy Implanter for Manufacturing Efficiency / H. L. Sun ; W. Lee ; K. Xu ; H. Y. Tsun ; K. T. Peng ; L. S. Juang ; H. P. Tseng |
| Rising Microwave Frequency of a Broad-Ion-Beam ECR Source with Cylindrically Comb-Shaped Magnetic Field Configuration / J. Saito |
| Profile and Angle Measurement System of SHX / Y. Kikuchi ; M. Kabasawa ; M. Tsukihara ; M. Sugitani |
| Implant Angle Deviation Reduction in Batch-Type High Energy Implanter / N. Suetsugu ; T. Yamada |
| Stencil Mask Ion Implantation Technology for Realistic Approach to Wafer Process / M. Ishikawa ; J. Fujiyama |
| Enhanced Dosimetry for Single Wafer High-Current Implanters / J. Dzengelaski ; D. Distaso ; D. Timberlake ; J. Cummings |
| Using Multiple Implant Regions to Reduce Development Wafer Usage / S. R. Walther ; S. Falk ; P. Nunan |
| Advanced Modeling Techniques for Analysis of High Current Ribbon Beam Transport and Control |
| Increase of Beam Current Mass-Separated by Long Gap Dipole Sector Magnet for S/D Process in FPD Manufacturing / S. Dohi ; Y. Ando ; Y. Inouchi ; Y. Matsuda ; M. Konishi ; J. Tatemachi ; M. Nukayama ; K. Nakao ; K. Orihira |
| Nissin Ion Equipment Indirectly Heated Cathode Ion Source / K. Tanaka ; K. Miyabayashi ; H. Fujita ; T. Kinoyama ; T. Yamashita |
| Improved Ion Beam Incident Angle Control for Varian E220 and E500 Implanters / D. Hendrix ; Z. Zhao ; R. Liebert ; K. Gifford ; P. Mitchell |
| Development of an Ion Beam Aligner for Liquid Crystal Displays / T. Matsumoto ; M. Tanii ; Y. Andoh |
| Real-Time Optimization Method for Optical Parameters of Ion Implanters / S. Ogata ; H. Yokoo ; H. Suzuki ; T. Hisamune ; M. Araki |
| Implant Angle Monitoring-A Comparison of Channeling Features / M. A. Rathmell |
| Defectivity Reduction and Control in Ion Implant Systems through Hardware and Process Optimization / D.-W. Franke ; F. Hundt ; T. Guenther ; M. Schmeide ; C. E. Ferrell ; B. Krimbacher ; F. Haerting ; J. Grant |
| Advanced Charge Control for Single Wafer Implanters / P. F. Kurunczi ; A. S. Perel ; E. Wright ; S. Kikuchi |
| APC Implementation on VIISta Ion Implanters / Y. K. Kim ; B. Adams ; N. Parisi ; J. Hamilton |
| Optimization of High-Energy Implanter Beamline Pumping / M. LaFontaine ; M. Pharand ; Y. Huang ; I. Pokidov ; J. Ferrara |
| Reduction of the Wafer Pattern Damage on the Batch-Type High Current Ion Implanters / E. Oga ; H. Izutani |
| Charging Mechanism during Ion Implantation without Charge Compensation / S. Sakai ; H. Fan ; E. Chen |
| The Impact of Mass Resolution on Molybdenum Contamination for B, P, BF[subscript 2], and As Implantations / V. Haublein |
| Maximizing Productivity for Well Implantation / Q. Zhai ; D. Rodier |
| Efficient High Current Process Transfer and Device Matching Strategies for Sub-90nm Manufacturing / N. Loh ; M. C. Tan ; S. Jillson ; B. Wong ; K. Loh |
| Implant Technology (Materials) |
| The Development of In-Situ Ion Implant Cleaning Processes / S. Bishop ; R. Kaim ; S. Yedave ; J. Arno ; F. DiMeo Jr. ; M. Wodjenski |
| Qualification of the GASGUARD[Registered] SAS GGT Arsine Sub-Atmospheric Gas Delivery System for Ion Implantation / J. P. Dunn ; J. L. Rolland ; J. S. Grim ; R. M. Machado ; C. L. Hartz |
| Manufacturing Assessment of SDS3[Registered] Gas Upgrade / J. Rolland ; J. Grim ; B. Brown |
| ATMI's Ion Implant Process Efficiency Research Laboratory (IIPERL) / L. Wang |
| A Safe Solution to Dopant Gas Desorption from Metal Surfaces / T. Nakanoya ; M. Egami |
| Dopant Cylinder Lifetime Monitor / S. Lurcott ; J. McManus ; G. Smith |
| Process Control & Yield |
| Real World Experience with Ion Implant Fault Detection at Freescale Semiconductor / D. C. Sing ; T. Breeden ; H. Fakhreddine ; S. Gladwin ; J. Locke ; J. McHugh ; M. Rendon |
| Angle Measurement and Control in High Current Ion Implantation / B. S. Freer ; D. E. Hoglund ; M. A. Graf |
| Process Control in Production-Worthy Plasma Doping Technology / E. J. Winder ; T. M. Parrill |
| Gate Dielectric Damage Due to High-Tilt Implant / R. Hung ; B. Ninan ; M. Smayling ; N. Toshiyuki ; H. Chen ; C.-P. Chang |
| High Current Implant Precision Requirements for SUB-65 nm Logic Devices / T. Romig ; E. Kim ; J. Xu |
| Production-Worthy USJ Formation by Self-Regulatory Plasma Doping Method / Y. Sasaki ; H. Ito ; K. Okashita ; H. Tamura ; C. G. Jin ; B. Mizuno ; T. Okumura ; I. Aiba ; Y. Fukagawa ; H. Sauddin ; K. Tsutsui ; H. Iwai |
| Process Control & Yield (Metrology) |
| Surface Charge Profiling-An Advancement in Ion Implant Monitoring / C. Krueger ; C.-H. Ng ; G. Krytsch |
| Metrology and High Resolution Mapping of Shallow Junctions Formed by Low Energy Implant Processes / E. Don ; A. Pap ; P. Tutto ; T. Pavelka ; C. Wyon ; D. Sotta ; R. Oechsner ; M. Pfeffer |
| Metrology Requirements for Single Wafer Ion Implanters / G. Angel ; R. Mollica |
| Local Resistance Measurement on Polycrystalline Silicon Layer in Low-Temperature Poly-Si Thin Film Transistor Using Scanning Spreading Resistance Microscopy / S. Abo ; H. Yamagiwa ; F. Wakaya ; T. Sakamoto ; H. Tokioka ; N. Nakagawa ; M. Takai |
| Study on Chemical Binding States of Silicon in Conjunction with Ultra-Shallow Plasma Doping by Using Hard X-Ray Photoelectron Spectroscopy (HX-PES) / C. G. Tin ; M. Kobata ; J. J. Kim ; E. Ikenaga ; K. Kobayashi |
| Characterization of Parasitic Transistor Phenomenon in Nano-Scale NAND Flash Device by Blanket Tilt Implantation and Scanning Capacitance Microscopy / D.-H. Lee ; S.-W. Shin ; C.-K. Ryu ; M.-K. Lee ; N.-Y. Kwak ; H.-S. Shon ; B.-S. Lee ; S.-K. Park ; K.-D. Kwack |
| Direct Measurement of Beam Angle in a High Current Ion Implanter / L. M. Rubin ; D. Newman ; K. Ditzler ; K. Elshot |
| Photoelectric Measurement Method for Implanted Silicon: A Phenomenological Approach / K. Steeples ; E. Tsidilkovski |
| Detection and Reduction of the Yield Impact of Particle Induced Structure Defects at Batch Ion Implanters / M. Kokrot ; B. Sauter |
| Non-Contact, Image-Based Photoluminescence Metrology for Ion Implantation and Annealing Process Inspection / S. G. Hummel ; J. O. Borland |
| Superior Dose and Energy Monitoring Capability of the Therma-Probe System / M. Bakshi ; D. Shaugnessy ; L. Nicolaides |
| Mapping Leakages of USJ Test Wafers / J. T. C. Chen ; T. Dimitrova ; D. Dimitrov |
| Improved Techniques for Characterization and Optimization of SIMOX Implantation / R. Dolan ; C. McKenna ; S. Richards ; Y. Aoki ; T. Nakai ; S. Nakamura ; M. Walden |
| Non-Contact Sheet Resistance and Leakage Current Monitoring of Multi-Implant, Ultra-Shallow Junctions: Doping and Damage Effects for MS-Anneals / M. I. Current ; V. N. Faifer ; T. M. H. Wong ; T. Nguyen ; A. Koo |
| Characterizing Dopant Contamination Using Ion Implantation / J. J. Naughton ; J. M. Towner |
| Manufacturing Precision Polysilicon Resistors Using Ion Implantation |
| Automated Dose and Dopants Level Monitoring by SIMS / H. Maul ; N. Loibl ; U. Ehrke ; A. Merkulov ; P. Peres ; M. Schuhmacher |
| Materials |
| Optima HD: Single Wafer Mechanical Scan Ion Implanter / P. Splinter ; M. Graf ; C. Godfrey ; D. Polner ; J. Danis ; K. Ota |
| High Performance Medium Current Ion Implanter System EXCEED3000AH-G3 / T. Kobayashi ; T. Ikejiri ; Y. Koga ; S. Yuasa |
| Down to 2nm Ultra Shallow Junctions: Fabrication by IBS Plasma Immersion Ion Implantation Prototype PULSION[Registered] / G. Mathieu |
| Advanced Single Wafer High Current Beamline Architecture for SUB-65nm / J. Mullin |
| Applied Quantum X Implant System: Technology Enhancements to Enable Production-Worthy Performance at the 45 nm Node / A. Murrell ; P. Edwards ; R. Goldberg ; B. Mitchell ; E. Collart ; S. Morley ; G. Ryding ; T. Smick ; M. Farley ; T. Sakase ; D. Hacker ; P. Kindersley |
| Enhancing the Ibis i2000[Trademark] SIMOX Oxygen Ion Implanter |
| Indium Performance on the V810 / R. J. Low |
| Understanding the Calibration Methodology for the Axcelis GSD/HE Final Energy Magnet and a Means for Manipulating the Calibration Curve / R. Johnson ; J. Schuur |
| New Medium Current Ion Implanter SOPHI-200 / R. Fukui ; M. Tomita |
| Optima MD: Mid-Dose, Hybrid-Scan Ion Implanter / K. W. Wenzel ; B. H. Vanderberg |
| Optimised Charging Performance on Quantum X Ion Implanters / D. A. Kirkwood ; R. Miura ; A. J. Murrell |
| 65nm Device Characteristics Matching on Single and Batch System Ion Implanter / K. Okabe ; M. Kase |
| An Adaptive Knowledge-Based Ion Source Automation Methodology to Improve Beam to Beam Switch Performance on Applied Materials Quantum[Registered] X Single Wafer Ion Implanter / C. Burgess ; M. Keane ; R. Oliver |
| Conference Photographs |
| Author Index |
電子ブック
ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology - IIT 2006
