| Preface |
| Deposition and structural properties |
| Growth of GaN quasi-substrates by hydride vapor phase epitaxy / Wei Zhang ; B.K. Meyer |
| Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon / A. Dadgar, et al. |
| Molecular beam epitaxy of cubic III-nitrides on GaAs substrates / D.J. As, et al. |
| Freestanding GaN-substrates and devices / Claudio R. Miskys, et al. |
| Surfactants and antisurfactants on group-III-nitride surfaces / J. Neugebauer |
| Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy / D. Gerthsen, et al. |
| A theoretical investigation of dislocations in cubic and hexagonal gallium nitride / A.T. Blumenau, et al. |
| Lattice dynamics in GaN and AIN probed with first-and second-order Raman spectroscopy / U. Haboeck, et al. |
| Electronic and optical properties |
| Electronic and vibrational properties of group-III nitrides: Ab initio studies / F. Bechstedt, et al.) |
| Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by Infrared Spectroscopic Ellipsometry / A. Kasic, et al. |
| Mg in GaN: the structure of the acceptor and the electrical activity / H. Alves, et al. |
| Local vibrational modes and compensation effects in Mg-doped GaN / A. Hoffmann, et al. |
| Optical micro-characterization of group-III-nitrides: correlation of structural, electronic and optical properties / J. Christen, et al. |
| Optical properties of nitride heterostructures (Andreas Hangleiter) |
| The origin of the PL photoluminescence Stokes shift in ternary group-III nitrides: field effects and localization / M. Strassburg, et al. |
| Devices and device issues |
| GaN based laser diodes - epitaxial growth and device fabrication / T. Bottcher, et al. |
| Optical gain, gain saturation, and waveguiding in group III-nitride heterostructures / M. Rowe, et al. |
| Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures |
| Sensor applications / M. Eickhoff, et al.Part B： |
| Influence of polarization of the properties of GaN based FET structures / M. Neuburger, et al. |
| Gallium-nitride-based devices on silicon / A, Dadgar, et al. |
| Preface |
| Deposition and structural properties |
| Growth of GaN quasi-substrates by hydride vapor phase epitaxy / Wei Zhang ; B.K. Meyer |
| Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon / A. Dadgar, et al. |
| Molecular beam epitaxy of cubic III-nitrides on GaAs substrates / D.J. As, et al. |
| Freestanding GaN-substrates and devices / Claudio R. Miskys, et al. |
