Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices / 1): |
Silicon Carbide power devices - Status and upcoming challenges with a special attention to industrial application / 2): |
Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts / 3): |
Reliability aspects of SiC Schottky Diodes / 4): |
Design, process, and performance of all-epitaxial normally-off SiC JFETs / 5): |
Extreme Temperature SiC Integrated Circuit Technology / 6): |
1200 V SiC Vertical-channel-JFET based cascode switches / 7): |
Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors / 8): |
High electron mobility ahieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen / 9): |
4H-SiC MISFETs with Nitrogen-containing Insulators / 10): |
SiC Inversion Mobility / 11): |
Development of SiC diodes, power MOSFETs and intellegent Power Modules / 12): |
Reliability issues of 4H-SiC power MOSFETs toward high junction temperature operation / 13): |
Application of SiC-Transistors in Photovoltaic-Inverters / 14): |
Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs,and GTOs / 15): |
Suppressed surface recombination structure and surface passivation for improving current gain of 4H-SiC BJTs / 16): |
SiC avalanche photodiodes and photomultipliers for ultraviolet and solar-blind light detection / 17): |
Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices / 1): |
Silicon Carbide power devices - Status and upcoming challenges with a special attention to industrial application / 2): |
Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts / 3): |
Reliability aspects of SiC Schottky Diodes / 4): |
Design, process, and performance of all-epitaxial normally-off SiC JFETs / 5): |
Extreme Temperature SiC Integrated Circuit Technology / 6): |