| Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices / 1)： |
| Silicon Carbide power devices - Status and upcoming challenges with a special attention to industrial application / 2)： |
| Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts / 3)： |
| Reliability aspects of SiC Schottky Diodes / 4)： |
| Design, process, and performance of all-epitaxial normally-off SiC JFETs / 5)： |
| Extreme Temperature SiC Integrated Circuit Technology / 6)： |
| 1200 V SiC Vertical-channel-JFET based cascode switches / 7)： |
| Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors / 8)： |
| High electron mobility ahieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen / 9)： |
| 4H-SiC MISFETs with Nitrogen-containing Insulators / 10)： |
| SiC Inversion Mobility / 11)： |
| Development of SiC diodes, power MOSFETs and intellegent Power Modules / 12)： |
| Reliability issues of 4H-SiC power MOSFETs toward high junction temperature operation / 13)： |
| Application of SiC-Transistors in Photovoltaic-Inverters / 14)： |
| Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs,and GTOs / 15)： |
| Suppressed surface recombination structure and surface passivation for improving current gain of 4H-SiC BJTs / 16)： |
| SiC avalanche photodiodes and photomultipliers for ultraviolet and solar-blind light detection / 17)： |
| Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices / 1)： |
| Silicon Carbide power devices - Status and upcoming challenges with a special attention to industrial application / 2)： |
| Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts / 3)： |
| Reliability aspects of SiC Schottky Diodes / 4)： |
| Design, process, and performance of all-epitaxial normally-off SiC JFETs / 5)： |
| Extreme Temperature SiC Integrated Circuit Technology / 6)： |
