Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine

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Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine / edited by Alexei N. Nazarov and Jean-Pierre Raskin

資料種別:

図書

出版情報:

Durnten-Zurich : Trans Tech Publications, c2011

形態:

x, 206 p. ; 25 cm

シリーズ名:

Advanced materials research ; v. 276 <BA24926058>

著者名:

ISBN:

9783037851784 [3037851783]

書誌ID:

BB07198155

子書誌情報

フルテキスト

所蔵情報

他の版・巻

書誌詳細

ISSN:

10226680

注記:

Includes bibliographical references and indexes

言語:

英語

目次情報:

ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications / Eugene Chubenko; Alexey Klyshko; Vitaly Bondarenko; Marco Balucani; Anatoly I. Belous; Victor Malyshev

Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures / S.O. Gordienko; A. Nazarov; A.V. Rusavsky; A.V. Vasin; N. Rymarenko; V.G. Stepanov; T.M. Nazarova; V.S. Lysenko

Diamond - Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing / V.P. Popov; L.N. Safronov; O.V. Naumova; D.V. Nikolaev; Yury Nikolaevich Palyvanov; Igor Nikolaevish Kupriyanov

Hydrogen Gettering within Processed Oxygen-Implanted Silicon / Andrzej Misiuk; Adam Barcz; Jadwiga Bak-Misiuk; Alexander G. Ulyashin; Przemyslaw Romanowski

Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model / V. Dobrovolsky; Fedir Sizov; S. Cristoloveanu

Semi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels / A. Kohmyakov; V. Vyurkov

Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs / V.P. Popov; M.A. Ilnitsky

High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs / Mostafa Emam; M.A. Pavanello; F. Danneville; D. Vanhoenacker-Janvier; Jean Pierre Raskin

Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures / Bodgan Majkusiak; Andrzej Mazurak

Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs / Y.Y. Gomeniuk; Y.V. Gomeniuk; A. Nazarov; P.K. Hurley; Karim Cherkaoui; Scott Monaghan; Per Erik HellstrÃ¶m; H.D.B. Gottlob; J. Schubert; J.M.J. Lopes

Effects of High-Energy Neutrons on Advanced SOI MOSFETs / Valeriya Kilchytska; Joaquin Alvarado; Otilia Militaru; Guy Berger; Denis Flandre

Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields / Anatoly Druzhinin; Inna Marymova; Igor Kogut; Yuriy Khoverko

On-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing Beams / Umesh Bhaskar; Vikram Passi; Azeem Zulfiqar; Ulf SÃ¶dervall; Bengt Nilsson; Goran Petersson; Mats Hagberg; Thomas Pardoen; Jean Pierre Raskin

Non-Standard FinFET Devices for Small Volume Sample Sensors / Michal Zaborowski; Daniel Tomaszewski; Lidia #321;ukasiak; A. Jakubowski

3D SOI Elements for System-on-Chip Applications / I.T. Kogut; A.A. Druzhinin; V.I. Holota

Routes towards Novel Active Pressure Sensors in SOI Technology / Benoit Olbrechts; Bertrand Rue; Thomas Pardoen; Denis Flandre; Jean Pierre Raskin

Photovoltage Performance of Ge/Si Nanostructures Grown on Intermediate Ultrathin SiOX Layers / A.O. Podolian; V.V. Kuryliuk; A.B. Nadtochiy; S.V. Kondratenko; O.A. Korotchenkov; Yu.N. Kozyrev; V.K. Sklyar; M.Yu. Rubezhanska; V.S. Lysenko

Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on Silicon / Y.Y. Gomeniuk; Y.V. Gomeniuk; A. Nazarov; V.S. Lysenko; H.J. Osten; A. Laha

Effect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiOX-Si Structures / V.S. Lysenko; Yu.V. Gomeniuk; Yu.N. Kozyrev; M.Yu. Rubezhanska; V.K. Skylar; S.V. Kondratenko; Ye.Ye. Melnichuk; Christian Teichert

A Model of the Evolution of the Au/Si Droplet Ensembles during Rapid Thermal Annealing at High Temperatures / Andrey SARIKOV; A.I. Klimovskaya; O. Oberemok; O. Lytvyn; O. Stadnik

The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors / V.N. Babentsov; V.A. Boyko; A.F. Kolomys; G.A. Shepelski; V.V. Strelchuk; N.I. Tarbaev

ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications / Eugene Chubenko; Alexey Klyshko; Vitaly Bondarenko; Marco Balucani; Anatoly I. Belous; Victor Malyshev

Hydrogen Gettering within Processed Oxygen-Implanted Silicon / Andrzej Misiuk; Adam Barcz; Jadwiga Bak-Misiuk; Alexander G. Ulyashin; Przemyslaw Romanowski

Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model / V. Dobrovolsky; Fedir Sizov; S. Cristoloveanu

Semi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels / A. Kohmyakov; V. Vyurkov

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