Materials, processes, and reliability for advanced interconnects for micro- and nanoelectronics--2011 : symposium held April 25-29, 2011, San Francisco, California, U.S.A.

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Materials, processes, and reliability for advanced interconnects for micro- and nanoelectronics--2011 : symposium held April 25-29, 2011, San Francisco, California, U.S.A. / editors, Mikhail R. Baklanov ... [et al.]

資料種別:

図書

出版情報:

Warrendale, Pa. : Materials Research Society
Cambridge ; New York : Cambridge University Press, 2012

形態:

ix, 127 p. ; 24 cm

シリーズ名:

Materials Research Society symposium proceedings ; v. 1335 <BA00013775>

著者名:

ISBN:

9781605113128 [1605113123] (: hard)

書誌ID:

BB08538361

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フルテキスト

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注記:

"Symposium O, 'Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics', held at the April 25-29, 2011 MRS Spring Meeting in San Francisco, California"--P. ix
Includes bibliographical references and indexes

主題:

Integrated circuits--Very large scale integration--Congresses; Interconnects (Integrated circuit technology)--Congresses; Materials--Congresses; Microelectronics--Congresses; Nanoelectronics--Congresses

言語:

英語

目次情報:

Low-k Materials / Part I：

Ultra low-k materials based on self-assembled organic polymers / Marianna Pantouvaki1：

New designs of hydrophobic and mesostructured ultra low k materials with isolated mesopores / Anthony Grunenwald2：

Evaluation of ultra-thin layer fabricated by wet-process as a pore-seal for porous low-k films / Shoko Ono3：

Ozone treatment on nanoporous ultralow dielectric materials to optimize their mechanical and dielectrical properties / Hee-Woo Rhee4：

Integration / Part II：

Optimizing stressor film deposition sequence in polish rate order for best planarization / John H. Zhang5：

Effect of chemical solutions and surface wettability on the stability of advanced porous low-k materials / Quoc Toan Le6：

A less damaging patterning regime for a successful integration of ultra low-k materials in modern nanoelectronic devices / Sven Zimmermann7：

Defects in low-Ä¸ insulators (Ä¸=2.5âÇô2.0): ESR analysis and charge injection / Valeri Afanas'ev8：

Patterning organic fluorescent molecules with SAM patterns / Nan Lu9：

Optical interconnect technologies based on silicon photonics / Wim Bogaerts10：

Metallization / Part III：

32nm node highly reliable Cu/low-k integration technology with CuMn alloy seed / Shaoning Yao11：

Amorphous Ta-N as a diffusion barrier for Cu metallization / Neda Dalili12：

Comparison of TiN thin films grown on SiO2 by reactive dc magnetron sputtering and high power impulse magnetron sputtering / Jon Gudmundsson13：

Specific contact resistance of ohmic contacts on n-type SiC membranes / Patrick Leech14：

Development of electrochemical copper deposition screening methodologies for next generation additive selection / Kevin Ryan15：

3D Packaging / Part IV：

Microbump impact on reliability and performance in through-silicon via stacks / Aditya Karmarkar16：

Tailoring the crystallographic texture and electrical properties of inkjet-printed interconnects for use in microelectronics / Romain Cauchois17：

Low-k Materials / Part I：

Ultra low-k materials based on self-assembled organic polymers / Marianna Pantouvaki1：

New designs of hydrophobic and mesostructured ultra low k materials with isolated mesopores / Anthony Grunenwald2：

Evaluation of ultra-thin layer fabricated by wet-process as a pore-seal for porous low-k films / Shoko Ono3：

Ozone treatment on nanoporous ultralow dielectric materials to optimize their mechanical and dielectrical properties / Hee-Woo Rhee4：

Integration / Part II：

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