ZnO, GaN, Phosphors / Part I: |
Rare earth materials challenge to national defense: material scientist's perspective / Shiva Hullavarad1: |
Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy / Atsushi Nishikawa2: |
Photoluminescence X-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy / Shuichi Emura3: |
Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometallic vapor-phase epitaxy / Jonathan Poplawsky4: |
Damage formation in GaN under medium energy range implantation of rare earth ions: a combined TEM, XRD and RBS/C investigation / Bertrand Lacroix5: |
Insulating Materials: Lasers and Phosphors / Part II: |
Upconversion in rare-earth ion-doped NaYF4 crystals and nanocolloids / Darayas Patel6: |
Preparation of luminescent inorganic core/shell-structured nanoparticles / Moritz Milde7: |
Vacuum deposited erbium-doped NIR luminescent organic thin films for 1.5 ïü¡m optical amplication applications / Christophe Galindo8: |
Multicolor luminescence from Ca3Y2(SiO4)3:Eu2+, Eu3+ material / Anna Dobrowolska9: |
Efficient near-infrared luminescence and energy transfer in Nd-Bi co-doped zeolites / Zhenhua Bai10: |
Red-emitting Ca(1-x)SrxS:Eu2+ phosphors as light converters for plant-growth applications / Miroslaw Batentschuk11: |
Photostimulable fluorescent nanoparticles for biological imaging / Andres Osvet12: |
Imaging upconversion from NaYF4:Er:Yb nanoparticles on Au and Ag nanostructured substrates / Steve Smith13: |
Rare Earth Ions in Group III - Nitrides / Part III: |
Ultraviolet light emitting devices using AlGdN / Takashi Kita14: |
Theoretical investigation of Er-O co-doping in hexagonal GaN / Simone Sanna15: |
Photoluminescence of Eu-doped GaN / Kevin O'Donnell16: |
Site selective magneto-optical studies of Eu ions in gallium nitride / Nathaniel Woodward17: |
ZnO, GaN, Phosphors / Part I: |
Rare earth materials challenge to national defense: material scientist's perspective / Shiva Hullavarad1: |
Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy / Atsushi Nishikawa2: |
Photoluminescence X-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy / Shuichi Emura3: |
Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometallic vapor-phase epitaxy / Jonathan Poplawsky4: |
Damage formation in GaN under medium energy range implantation of rare earth ions: a combined TEM, XRD and RBS/C investigation / Bertrand Lacroix5: |