Catalytic chemical vapor deposition : technology and applications of cat-CVD

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Catalytic chemical vapor deposition : technology and applications of cat-CVD / Hideki Matsumura, Hironobu Umemoto, Karen K. Gleason, Ruud E. I. Schropp

資料種別:

図書

出版情報:

Weinheim : Wiley-VCH, c2019

形態:

xvi, 421 p. ; 25 cm

著者名:

ISBN:

9783527345236 [352734523X]

書誌ID:

BB28569346

子書誌情報

フルテキスト

所蔵情報

他の版・巻

書誌詳細

注記:

Includes bibliographical references and index

著者名ヨミ:

ウメモト, ヒロノブ

主題:

Chemical vapor deposition

言語:

英語

目次情報:

Preface

Abbreviations

Introduction / 1：

Thin Film Technologies / 1.1：

Birth of Cat-CVD / 1.2：

Research History of Cat-CVD and Related Technologies / 1.3：

Structure of This Book / 1.4：

References

Fundamentals for Studying the Physics of Cat-CVD and Difference from PECVD / 2：

Fundamental Physics of the Deposition Chamber / 2.1：

Density of Molecules and Their Thermal Velocity / 2.1.1：

Mean Free Path / 2.1.2：

Equation Expressing the Mean Free Path / 2.1.2.1：

Estimation of Diameter of Molecules or Species / 2.1.2.2：

Examples of Mean Free Path / 2.1.2.3：

Interval Time Between the First Collision and the Second Collision / 2.1.2.4：

Collisions with a Solid Surface / 2.1.3：

Comparison of Collisions of Molecules in Space with Collisions at Chamber Wall / 2.1.3.1：

Residence Time of Species in Chamber / 2.1.4：

Difference Between Cat-CVD and PECVD Apparatuses / 2.2：

Fundamental Features of PECVD / 2.3：

Birth of PECVD / 2.3.1：

Generation of Plasma / 2.3.2：

DC Plasma to RF Plasma / 2.3.3：

Sheath Voltage / 2.3.4：

Density of Decomposed Species in PECVD / 2.3.5：

Number of Collisions Between Electrons and Gas Molecules / 2.3.5.1：

Number of Decomposed Species in PECVD / 2.3.5.2：

Drawbacks of PECVD and Technologies Overcoming Them / 2.4：

Plasma Damage / 2.4.1：

Increase of Frequency in PECVD / 2.4.2：

Power Transferring System / 2.4.3：

Large Area Uniformity for Film Deposition / 2.4.4：

Features of Cat-CVD as Technology Overcoming Drawbacks of PECVD / 2.5：

Rough Calculation of Ranges (R) of Si and H Atoms and Defect Range (R_defect) Created by Si and H Atoms Implanted with Very Low Energy / 2.A：

Fundamentals for Analytical Methods for Revealing Chemical Reactions in Cat-CVD / 3：

Importance of Radical Species in CVD Processes / 3.1：

Radical Detection Techniques / 3.2：

One-Photon Laser-Induced Fluorescence / 3.3：

General Formulation / 3.3.1：

Validity of the Assumption of a Two-State System / 3.3.2：

Anisotropy of the Fluorescence / 3.3.3：

Correction for Nonradiative Decay Processes / 3.3.4：

Spectral Broadening / 3.3.5：

Typical Apparatus for One-Photon LIF and the Experimental Results / 3.3.6：

Determination of Rotational and Vibrational State Distributions of Molecular Radicals / 3.3.7：

Estimation of Absolute Densities in One-Photon LIF / 3.3.8：

Two-Photon Laser-Induced Fluorescence / 3.4：

Single-Path Vacuum Ultraviolet (VUV) Laser Absorption / 3.5：

Other Laser Spectroscopic Techniques / 3.6：

Resonance-Enhanced Multiphoton Ionization / 3.6.1：

Cavity Ringdown Spectroscopy / 3.6.2：

Tunable Diode Laser Absorption Spectroscopy / 3.6.3：

Mass Spectrometric Techniques / 3.7：

Photoionization Mass Spectrometry / 3.7.1：

Threshold Ionization Mass Spectrometry / 3.7.2：

Ion Attachment Mass Spectrometry / 3.7.3：

Determination of Gas-Phase Composition of Stable Molecules / 3.8：

Term Symbols Used in Atomic and Molecular Spectroscopy / 3.A：

Physics and Chemistry of Cat-CVD / 4：

Kinetics of Molecules in Cat-CVD Chamber / 4.1：

Molecules in Cat-CVD Chamber / 4.1.1：

Comparison with PECVD for Decomposition / 4.1.2：

Influence of Surface Area of Catalyzer / 4.1.3：

What Happens on Catalyzer Surfaces - Catalytic Reactions / 4.2：

Poisoning of Surface Decomposition Processes / 4.3：

Gas Temperature Distribution in Cat-CVD Chambers / 4.4：

Decomposition Mechanisms on Metal Wire Surfaces and Gas-Phase Kinetics / 4.5：

Catalytic Decomposition of Diatomic Molecules: H₂, N₂, and O₂ / 4.5.1：

Catalytic Decomposition of H₂O / 4.5.2：

Catalytic Decomposition of SiH₄ and SiH₄/H₂ and the Succeeding Gas-Phase Reactions / 4.5.3：

Catalytic Decomposition of NH₃ and the Succeeding Gas-Phase Reactions / 4.5.4：

Catalytic Decomposition of CH₄ and CH₄/H₂ and the Succeeding Gas-Phase Reactions / 4.5.5：

Catalytic Decomposition of PH₃ and PH₃/H₂ and the Succeeding Gas-Phase Reactions / 4.5.6：

Catalytic Decomposition of B₂H₆ and B₂H₆/H₂ and the Succeeding Gas-Phase Reactions / 4.5.7：

Catalytic Decomposition of H₃NBH₃ and Release of B Atoms from Boronized Wires / 4.5.8：

Catalytic Decomposition of Methyl-Substituted Silanes and Hexamethyldisilazane (HMDS) / 4.5.9：

Summary of Catalytic Decomposition of Various Molecules on Metal Wires / 4.5.10：

Si Film Formation Mechanisms in Cat-CVD / 4.6：

Properties of Inorganic Films Prepared by Cat-CVD / 5：

Properties of Amorphous Silicon (a-Si) Prepared by Cat-CVD / 5.1：

Fundamentals of Amorphous Silicon (a-Si) / 5.1.1：

Birth of Device Quality Amorphous Silicon (a-Si) / 5.1.1.1：

Band Structure of Amorphous Materials / 5.1.1.2：

General Properties of a-Si / 5.1.1.3：

Fundamentals of Preparation of a-Si by Cat-CVD / 5.1.2：

Deposition Parameters / 5.1.2.1：

Structural Studies on Cat-CVD a-Si: Infrared Absorption / 5.1.2.2：

General Properties of Cat-CVD a-Si / 5.1.3：

Deposition Mechanism of a-Si in Cat-CVD Process - Growth Model / 5.1.4：

Crystallization of Silicon Films and Microcrystalline Silicon (Â¿c-Si) / 5.2：

Growth of Crystalline Si Film / 5.2.1：

Structure of Cat-CVD Poly-Si / 5.2.2：

Properties of Cat-CVD Poly-Si Films / 5.2.3：

Si Crystal Growth on Crystalline Si / 5.2.4：

Properties of Silicon Nitride (SiN_x) / 5.3：

Usefulness of Silicon Nitride (SiN_x) Films / 5.3.1：

Fundamentals for the Preparation of SiN_x / 5.3.2：

SiN_x Preparation from NH₃ and SiH₄ Mixture / 5.3.3：

SiN_x Preparation from Mixture of NH₃, SiH₄, and a Large Amount of H₂ / 5.3.4：

Conformal Step Coverage of SiN_x Prepared from the Mixture of NH₃, SiH₄, and a Large Amount of H_{2 / 5.3.5：}

Cat-CVD SiN_x Prepared from HMDS / 5.3.6：

Properties of Silicon Oxynitride (SiO_xN_y) / 5.4：

SiO_xN_{y Films Prepared by SiH₄, NH₃, H₂, and O₂ Mixtures / 5.4.1：}

SiO_xN_y Films Prepared by HMDS, NH₃, H₂, and O₂ Mixtures / 5.4.2：

Properties of Silicon Oxide (SiO₂) Films Prepared by Cat-CVD / 5.5：

Preparation of Aluminum Oxide (Al₂O3) Films by Cat-CVD / 5.6：

Preparation of Aluminum Nitride (AIN) by Cat-CVD / 5.7：

Summary of Cat-CVD Inorganic Films / 5.8：

Organic Polymer Synthesis by Cat-CVD-Related Technology - Initiated CVD (iCVD) / 6：

PTFE Synthesis by Cat-CVD-Related Technology / 6.1：

Select Characteristics and Applications of CVD PTFE Films / 6.2.1：

Influence of the Catalyzing Materials for PTFE Deposition / 6.2.2：

Mechanistic Principles of iCVD / 6.3：

Initiators and Inhibitors / 6.3.1：

Monomer Adsorption / 6.3.2：

Deposition Rate and Molecular Weight / 6.3.3：

Copolymerization / 6.3.4：

Conformality / 6.3.5：

Functional, Surface-Reactive, and Responsive Organic Films Prepared by iCVD / 6.4：

Polyglycidyl Methacrylate (PGMA): Properties and Applications / 6.4.1：

iCVD Films with Perfluoroalkyl Functional Groups: Properties and Applications / 6.4.2：

Polyhydroxyethylacrylate (PHEMA) and Its Copolymers: Properties and Applications / 6.4.3：

Organosilicon and Organosilazanes: Properties and Applications / 6.4.4：

iCVD of Styrene, 4-Aminostyrene, and Divinylbenzene: Properties and Applications / 6.4.5：

iCVD of EGDA and EGDMA: Properties and Applications / 6.4.6：

Zwitterionic and Polyionic iCVD Films: Properties and Applications / 6.4.7：

iCVD "Smart Surfaces": Properties and Applications / 6.4.8：

Interfacial Engineering with iCVD: Adhesion and Grafting / 6.5：

Reactors for Synthesizing Organic Films by iCVD / 6.6：

Summary and Future Prospects for iCVD / 6.7：

Physics and Technologies for Operating Cat-CVD Apparatus / 7：

Influence of Gas Flow in Cat-CVD Apparatus / 7.1：

Experiment Using a Long Cylindrical Chamber for Establishing Quasi-laminar Flow / 7.1.1：

Dissociation Probability of SiH₄ Derived from a Cylindrical Chamber / 7.1.2：

Factors Deciding Film Uniformity / 7.2：

Equation Expressing the Geometrical Relation Between Catalyzer and Substrates / 7.2.1：

Example of Estimation of Uniformity of Film Thickness / 7.2.2：

Limit of Packing Density of Catalyzing Wires / 7.3：

Thermal Radiation from a Heated Catalyzer / 7.4：

Fundamentals of Thermal Radiation / 7.4.1：

Control of Substrate Temperatures in Thermal Radiation / 7.4.2：

Thermal Radiation in CVD Systems / 7.4.3：

Contamination from a Heated Catalyzer / 7.5：

Contamination of Catalyzing Materials / 7.5.1：

Contamination from Other Impurities / 7.5.2：

Flux Density of Impurities Emitted from Heated Catalyzers / 7.5.3：

Lifetime of Catalyzing Wires and Techniques to Expand Their Lifetimes / 7.6：

Silicide Formation of W Catalyzer / 7.6.1：

Silicide Formation of Ta Catalyzer / 7.6.3：

Suppression of Silicide Formation by Carburization of W Surface / 7.6.4：

Ta Catalyzer and Method for Extension of Its Lifetime / 7.6.5：

Lifetime Extension by Using TaC / 7.6.6：

Lifetime Extension by Using Other Ta Alloys / 7.6.7：

Lifetimes of W Catalyzer in Carbon-Containing Gases / 7.6.8：

Long-Life Catalyzer Used in iCVD / 7.6.9：

Chamber Cleaning / 7.7：

Status of Mass Production Machine / 7.8：

Cat-CVD Mass Production Machine for Applications in Compound Semiconductors / 7.8.1：

Cat-CVD Mass Production Apparatus for Large Area Deposition / 7.8.2：

Cat-CVD Apparatus for Coating of PET Bottles / 7.8.3：

Prototypes for Any Other Mass Production Machine / 7.8.4：

Application of Cat-CVD Technologies / 8：

Introduction: Summarized History of Cat-CVD Research and Application / 8.1：

Application to Solar Cells / 8.2：

Silicon and Silicon Alloy Thin Film Solar Cells / 8.2.1：

Amorphous Silicon Solar Cells / 8.2.1.1：

Amorphous Silicon-Germanium Alloy Solar Cells / 8.2.1.3：

Micro crystalline Silicon Solar Cells and Tandem Cells / 8.2.1.4：

Nanostructured Solar Cells / 8.2.1.5：

Application to Crystalline Silicon (c-Si) Solar Cells / 8.2.2：

Cat-CVD Silicon-Nitride (SiN_x/Amorphous-Silicon (a-Si)-Stacked Passivation / 8.2.2.1：

Cat-CVD SiN_x/a-Si-Stacked Passivation on Textured c-Si Substrates / 8.2.2.3：

a-Si and c-Si Heterojunction Solar Cells / 8.2.3：

Surface Passivation on c-Si Solar Cells / 8.2.3.1：

Application to Thin Film Transistors (TFT) / 8.3：

Amorphous Silicon (a-Si) TFT / 8.3.1：

General Features of a-Si TFT / 8.3.1.1：

Cat-CVD a-Si TFT: Differences from PECVD a-Si TFT / 8.3.1.2：

Poly-Si TFT / 8.3.2：

Surface Passivation on Compound Semiconductor Devices / 8.4：

Passivation for Gallium-Arsenide (GaAs) High Electron Mobility Transistor (HEMT) / 8.4.1：

Passivation for Ultrahigh-Frequency Transistors / 8.4.2：

Passivation for Semiconductor Lasers / 8.4.3：

Application for ULSI Industry / 8.5：

Gas Barrier Films for Various Devices Such as Organic Devices / 8.6：

Inorganic Gas Barrier Films, SiN_x/SiO_xN_y, for OLED / 8.6.1：

Inorganic/Organic Stacked Gas Barrier Films / 8.6.2：

Gas Barrier Films for Food Packages / 8.6.3：

Other Application and Summary of Present Cat-CVD Application / 8.7：

Radicals Generated in Cat-CVD Apparatus and Their Application / 9：

Generation of High-Density Hydrogen (H) Atoms / 9.1：

Generation of High-Density H Atoms / 9.1.1：

Transportation of H Atoms / 9.1.2：

Cleaning and Etching by H Atoms Generated in Cat-CVD Apparatus / 9.2：

Etching of Crystalline Silicon / 9.2.1：

Cleaning of Carbon-Contaminated Surface / 9.2.2：

Photoresist Removal by Hydrogen Atoms / 9.3：

Reduction of Metal Oxide by H atoms / 9.4：

Reduction of Various Metal Oxides / 9.4.1：

Characteristic Control of Metal Oxide Semiconductors by H Atoms / 9.4.2：

Low-Temperature Formation of Low-Resistivity Metal Lines from Liquid Ink by H Atoms / 9.5：

Low-Temperature Surface Oxidation - "Cat-Oxidation" / 9.6：

Low-Temperature Surface Nitridation - "Cat-Nitridation" of Si and GaAs / 9.7：

"Cat-Chemical Sputtering": A New Thin Film Deposition Method Utilizing Radicals / 9.8：

Cat-doping: A Novel Low-Temperature Impurity Doping Technology / 10：

Discovery or Invention of Cat-doping / 10.1：

Low-Temperature and Shallow Phosphorus (P) Doping into c-Si / 10.3：

Measurement of Electrical Properties of a Shallow-Doped Layer / 10.3.1：

Measurement of Concentration Profiles of Cat-Doped Impurities by SIMS / 10.3.2：

Estimation of Diffusion Constant / 10.3.3：

Properties of Cat-Doped P Atoms / 10.3.4：

Mechanism of Cat-doping / 10.3.5：

Possibility of Diffusion Enhancement by H Atoms / 10.3.5.1：

Vacancy Transportation Model / 10.3.5.2：

Si-Modified Surface Layer Model / 10.3.5.3：

Low-Temperature Boron (B) Doping into c-Si / 10.4：

Cat-Doping into a-Si / 10.5：

Feasibility of Cat-Doping for Various Applications / 10.6：

Surface Potential Control by Cat-doping Realizing High-Quality Passivation / 10.6.1：

Cat-doping into a-Si and Its Application to Heterojunction Solar Cells / 10.6.2：

Index

Preface

Abbreviations

Introduction / 1：

Thin Film Technologies / 1.1：

Birth of Cat-CVD / 1.2：

Research History of Cat-CVD and Related Technologies / 1.3：

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