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1.

図書
図書
1. Guidelines for chemical reactivity evaluation and application to process design
American Institute of Chemical Engineers. Center for Chemical Process Safety
出版情報: New York : Center for Chemical Process Safety of the American Institute of Chemical Engineers, c1995  xxvii, 210 p. ; 24 cm
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List of Tables
List of Figures
Preface
Acknowledgments
Glossary
List of Symbols
Introduction / Chapter 1：
General / 1.1：
Chemical Reactivity / 1.2：
Detonations, Deflagrations, and Runaways / 1.3：
Assessment and Testing Strategies / 1.4：
Identification of Hazardous Chemical Reactivity / Chapter 2：
Summary/Strategy / 2.1：
Hazard Identification Strategy / 2.1.1：
Exothermic Reactions / 2.1.3：
Experimental Thermal and Reactivity Measurements / 2.1.4：
Test Strategies / 2.1.5：
Overview of Thermal Stability Test methods / 2.1.6：
Examples of Interpretation and Application of Test Data / 2.1.7：
Technical Section / 2.2：
Identification of High Energy Substances / 2.2.2：
Hazard Prediction by Thermodynamic Calculations / 2.2.3：
Oxygen Balance / 2.2.3.1：
Calculation of the Reaction Enthalpy / 2.2.3.2：
Application of Computer Programs / 2.2.3.3：
Instability/Incompatibility Factors / 2.2.4：
Factors Influencing Stability / 2.2.4.1：
Redox Systems / 2.2.4.2：
Reactions with Water / 2.2.4.3：
Reactions between Halogenated Hydrocarbons and Metals / 2.2.4.4：
Practical Testing / 2.3：
Screening Tests / 2.3.1：
Thermal Analysis / 2.3.1.1：
Isoperibolic Calorimetry / 2.3.1.2：
Thermal Stability and Runaway Testing / 2.3.2：
Isothermal Storage Tests / 2.3.2.1：
Dewar Flask Testing and Adiabatic Storage Tests / 2.3.2.2：
Accelerating Rate Calorimeter (ARC) / 2.3.2.3：
Stability Tests for Powders / 2.3.2.4：
Explosibility Testing / 2.3.3：
.Detonation Testing / 2.3.3.1：
Deflagration Testing and Autoclave Testing / 2.3.3.2：
Mechanical Sensitivity Testing / 2.3.3.3：
Sensitivity to heating Under Confinement / 2.3.3.4：
Reactivity Testing / 2.3.4：
Pyrophoric Properties / 2.3.4.1：
Reactivity with Water / 2.3.4.2：
Oxidizing Properties / 2.3.4.3：
Flammability Testing / 2.3.5：
Chemical Reactivity Considerations in Process/Reactor Design and Operation / Chapter 3：
Thermal Hazards: Identification and Analysis / 3.1：
Cause, Definition, and Prevention of a Runaway / 3.1.1.1：
Some Simple Rules for Inherent Safety / 3.1.1.2：
Strategy for Inherent Safety in Design and Operation / 3.1.1.3：
Equipment to be Used for the Analysis of Hazards / 3.1.1.4：
Reactor, Heat and Mass Balance Considerations / 3.2：
Heat and Mass Balances, Kinetics, and Reaction Stability / 3.2.1：
Adiabatic Temperature Rise / 3.2.1.1：
The Reaction / 3.2.1.2：
Reaction Rate / 3.2.1.3：
Reaction Rate Constant / 3.2.1.4：
Concentration of Reactants / 3.2.1.5：
Effect of Surrounding Temperature on Stability / 3.2.1.6：
Effect of Agitation and Surface Fouling on Stability / 3.2.1.7：
Mass Balance / 3.2.1.8：
Choice of Reactor / 3.2.2：
Heat Transfer / 3.2.3：
Heat Transfer in Nonagitated Vessels / 3.2.3.1：
Heat Transfer in Agitated Vessels / 3.2.3.2：
Acquisition and Use of Process Design data / 3.3：
Bench-Scale Equipment for Batch/Tank Reactors / 3.3.1：
Reaction Calorimeter (RC1) / 3.3.2.1：
Contalab / 3.3.2.2：
CPA ThermoMetric Instruments / 3.3.2.3：
Quantitative Reaction Calorimeter / 3.3.2.4：
Specialized Rectors / 3.3.2.5：
Vent Size Package (VSP) / 3.3.2.6：
Reactive System Screening Tool (RSST) / 3.3.2.7：
Process Safety for Reactive Systems / 3.3.3：
Test Plan / 3.3.3.1：
System Under Investigation / 3.3.3.2：
Test Results / 3.3.3.3：
Malfunction and Process Deviation Testing / 3.3.3.4：
Pressure Effect / 3.3.3.5：
Results from the ARC, RSST, and VSP / 3.3.3.6：
Scale-up and Pilot Plants / 3.3.4：
General Remarks / 3.3.4.1：
Chemical Kinetics. 3 / 3.3.4.2：
List of Tables
List of Figures
Preface
2.

図書
図書
2. Interaction of charged particles and atoms with surfaces (: gw ; : us)
editor, G. Chiarotti ; contributors, P. Alkemade, ... [et al.]
出版情報: Berlin ; Tokyo : Springer, c1995  xii, 328 p. ; 28 cm
シリーズ名: Landolt-Börnstein Zahlenwerte und Funktionen aus Naturwissenschaften und Technik, Neue Serie / Gesamtherausgabe, K.-H. Hellwege ; Group 3 . Solid state physics ; v. 24 . Physics of solid surfaces ; subvolume C
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Introductory material
General introduction (G. CHIAROTTI) / 1：
Motivations for a Landolt-Bornstein volume on surface physics / 1.1：
Outline of the volume / 1.2：
How to consult the volume / 1.3：
List of frequently used symbols and abbreviations / 1.4：
Conversion tables / 1.5：
Crystal structures and bulk lattice parameters of materials quoted in the volume / 1.6：
References for 1 / 1.7：
See Vol.24A / 2：
See Vol.24B / 3-5：
Interaction of charged particles with surfaces / 6：
Elastic scattering and diffraction of electrons and positrons / E. Zanazzi6.1：
Introduction / 6.1.1：
Definitions and historical layout / 6.1.1.1：
The diffraction of electrons and positrons / 6.1.1.2：
Experimental considerations / 6.1.1.3：
Diffraction theories and methods / 6.1.1.4：
LEED / 6.1.1.4.1：
Alternative methods using LEED / 6.1.1.4.1.1：
Simplifications and calculations / 6.1.1.4.1.2：
The scattering potential in LEED / 6.1.1.4.1.3：
The effect of temperature / 6.1.1.4.1.4：
Structure determination / 6.1.1.4.1.5：
Precision and reliability / 6.1.1.4.1.6：
VLEED / 6.1.1.4.2：
SPLEED / 6.1.1.4.3：
RHEED / 6.1.1.4.4：
LEPD / 6.1.1.4.5：
Clean surfaces / 6.1.1.5：
Data / 6.1.2：
Appendix / 6.1.3：
References for 6.1 / 6.1.4：
Inelastic scattering of electrons (M. ROCCA) / 6.2：
Preliminary remarks / 6.2.1：
The EELS experiment / 6.2.1.2：
EEL-spectrometer designs / 6.2.1.3：
Inelastic cross section / 6.2.1.4：
Dipole scattering / 6.2.1.4.1：
Impact scattering / 6.2.1.4.2：
Metals and semimetals / 6.2.2：
Surface phonons / 6.2.2.1.1：
Surface plasmons / 6.2.2.1.2：
Electron-hole pair and Stoner excitations / 6.2.2.1.3：
Semiconductors / 6.2.2.2：
III-V semiconductors / 6.2.2.2.1：
Si and Ge / 6.2.2.2.2：
Insulators and oxides / 6.2.2.3：
References for 6.2 / 6.2.3：
Elastic and inelastic scattering of ions (P. ALKEMADE) / 6.3：
Low energy ion scattering / 6.3.1：
Scattering phenomena / 6.3.1.2.1：
Charge exchange / 6.3.1.2.2：
Surface structure determination / 6.3.1.2.3：
Medium and high energy ion scattering / 6.3.1.3：
Channeling, shadowing and blocking / 6.3.1.3.1：
References for 6.3 / 6.3.1.3.2：
Interaction of atoms with surfaces (V. CELLI) / 7：
Elastic scattering: the atom-surface potential / 7.1：
Kinematics and resonant scattering / 7.1.2.1：
Semi-empirical atom-surface potentials / 7.1.2.2：
Hard wall models / 7.1.2.3：
Theory of the elastic atom-surface potential / 7.1.2.4：
The static repulsive potential / 7.1.2.4.1：
The static attractive potential / 7.1.2.4.2：
The total static potential / 7.1.2.4.3：
Inelastic scattering: surface phonons / 7.1.3：
Kinematics / 7.1.3.1：
Kinematic focussing / 7.1.3.1.1：
Dynamical theory / 7.1.3.2：
The distorted wave Born approximation (DWBA) / 7.1.3.2.1：
Relation to phonon density of states and correlation functions / 7.1.3.2.2：
The inelastic atom-surface interaction / 7.1.3.3：
The dynamic repulsion and the cutoff factor / 7.1.3.3.1：
Dynamical effects of the attractive potential / 7.1.3.3.2：
Phonon spectra and surface potential data / 7.2：
References for 7 / 7.3：
General index (See Vol.24D)
Index of surfaces
Introductory material
General introduction (G. CHIAROTTI) / 1：
Motivations for a Landolt-Bornstein volume on surface physics / 1.1：
3.

学位論文
学位
3. Single crystal growth of perovskite-related compounds and electrical properties of La[2]CuO[4+δ] and Bi[2]Sr[2]CaCu[2]O[8+y]
by Yu Jian-ding
出版情報: Tokyo : Tokyo Institute of Technology, 1995
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4.

図書
図書
4. Guidelines for process safety fundamentals in general plant operations
American Institute of Chemical Engineers. Center for Chemical Process Safety
出版情報: New York : Center for Chemical Process Safety of the American Institute of Chemical Engineers, c1995  xxiv, 360 p. ; 24 cm
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Preface
Acknowledgments
Acronyms and Abbreviations
Glossary
Introduction / 1：
Objective / 1.1：
Scope / 1.2：
Organization / 1.3：
References
Materials/Chemical Handling / 2：
Hazardous Property Identification / 2.1：
Material handling Hazards / 2.2：
Fire and Explosive Properties / 2.2.1：
Chemical Toxicity / 2.2.2：
Biological Hazards / 2.2.3：
Radiation Hazards / 2.2.4：
Electrical Hazards / 2.2.5：
Thermal Hazards / 2.2.6：
Physical Plant Hazards / 2.2.7：
Material Transport / 2.3：
Liquid Handling / 2.4：
Liquid Transport / 2.4.1：
Liquid Storage / 2.4.2：
Spill Control and Cleanup / 2.4.3：
Solids Handling / 2.5：
Storage Procedures / 2.5.1：
Transfer Procedures / 2.5.2：
Bulk Conveying / 2.5.3：
Solids Packaging / 2.5.4：
Gas Handling / 2.6：
Classification of Gases / 2.6.1：
Regulations and Standards / 2.6.2：
Gas Containers / 2.6.3：
Cylinder Auxiliaries / 2.6.4：
Cylinder Handling Procedures / 2.6.5：
Handling Hazardous Gases / 2.6.6：
Cryogenic Liquids / 2.6.7：
Waste Handling / 2.7：
Waste Disposal Plan / 2.7.1：
Release Reporting / 2.7.2：
Scrap and Salvage / 2.7.3：
Vessel Decommissioning / 2.7.4：
Waste Containers / 2.7.5：
Process Equipment and Procedures / 3：
Materials of Construction / 3.1：
Material Selection / 3.1.1：
Material Application / 3.1.2：
Corrosion / 3.2：
Types of Corrosion / 3.2.1：
Sources of Corrosion Information / 3.2.2：
Small Containers / 3.3：
Container Specification / 3.3.1：
Manufacturer's Quality Control / 3.3.2：
Receiving / 3.3.3：
Emptying of Containers / 3.3.4：
Warehousing / 3.3.5：
Loading and Shipping / 3.3.6：
Disposal of Containers / 3.3.7：
Piping / 3.4：
Piping Codes and Specifications / 3.4.1：
Piping Design Safety / 3.4.2：
Piping Installation Safety / 3.4.3：
Piping Operation Safety / 3.4.4：
Piping Maintenance Safety / 3.4.5：
Transfer Hoses / 3.5：
Safety in Design and Installation / 3.5.1：
Safety in Operation / 3.5.3：
Inspection and Maintenance / 3.5.4：
Pumps / 3.6：
Pump Types / 3.6.1：
Pump Design Safety / 3.6.2：
Pump Installation Safety / 3.6.3：
Pump Operation Safety / 3.6.4：
Pump Maintenance Safety / 3.6.5：
Fans and Compressors / 3.7：
Classification of Gas Movers / 3.7.1：
Gas Mover Operating Parameters / 3.7.2：
Gas Mover Safety Precautions / 3.7.3：
Drivers / 3.8：
Motors / 3.8.1：
Steam Turbines / 3.8.2：
Transmission / 3.8.3：
Filters / 3.9：
Safety Considerations / 3.9.1：
Waste Minimization and Disposal / 3.9.2：
Centrifuges / 3.10：
Types of Centrifuges / 3.10.1：
Design Considerations / 3.10.2：
Operation / 3.10.3：
Drying and Particle Size Reduction / 3.10.4：
Dryers / 3.11.1：
Size Reduction Equipment / 3.11.2：
Screening Equipment / 3.11.3：
Packaging of Hot Materials / 3.11.4：
Deflagration Hazards / 3.11.5：
Environmental Concerns and Hygiene / 3.11.6：
Instrument and Controls / 3.12：
I & C Design Safety / 3.12.1：
I & C Installation Safety / 3.12.2：
I & C Operation Safety / 3.12.3：
I & C Maintenance Safety / 3.12.4：
General Topics / 4：
Inspection, Maintenance, and Calibration / 4.1：
Inspection Techniques / 4.1.1：
Maintenance Manuals / 4.1.2：
Preventive Maintenance / 4.1.3：
Equipment Calibration / 4.1.4：
Spare Parts and Equipment / 4.2：
Storage / 4.2.1：
Disbursement / 4.2.3：
Storage and Warehousing / 4.3：
General Storage Techniques / 4.3.1：
Stored Materials and Containers / 4.3.2：
Material Movement / 4.3.3：
Shipping Vehicles / 4.3.4：
Plant Modification / 4.4：
Change Control Program / 4.4.1：
Change/Work Authorization / 4.4.2：
Training / 4.4.3：
Hazardous Work / 4.5：
Confined Space Entry / 4.5.1：
Equipment Lockout / 4.5.2：
Line Breaking and System Opening / 4.5.3：
Hazardous materials / 4.5.4：
4.5
Preface
Acknowledgments
Acronyms and Abbreviations
5.

図書
図書
5. Nonlinear fiber optics. 2nd ed.
Govind P. Agrawal
出版情報: San Diego : Academic Press, c1995  xviii, 592 p. ; 24 cm
シリーズ名: Optics and photonics series
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Preface
Introduction / 1：
Historical Perspective / 1.1：
Fiber Characteristics / 1.2：
Material and Fabrication / 1.2.1：
Fiber Losses / 1.2.2：
Chromatic Dispersion / 1.2.3：
Polarization-Mode Dispersion / 1.2.4：
Fiber Nonlinearities / 1.3：
Nonlinear Refraction / 1.3.1：
Stimulated Inelastic Scattering / 1.3.2：
Importance of Nonlinear Effects / 1.3.3：
Overview / 1.4：
Problems
References
Pulse Propagation in Fibers / 2：
Maxwell's Equations / 2.1：
Fiber Modes / 2.2：
Eigenvalue Equation / 2.2.1：
Single-Mode Condition / 2.2.2：
Characteristics of the Fundamental Mode / 2.2.3：
Pulse-Propagation Equation / 2.3：
Nonlinear Pulse Propagation / 2.3.1：
Higher-Order Nonlinear Effects / 2.3.2：
Numerical Methods / 2.4：
Split-Step Fourier Method / 2.4.1：
Finite-Difference Methods / 2.4.2：
Group-Velocity Dispersion / 3：
Different Propagation Regimes / 3.1：
Dispersion-Induced Pulse Broadening / 3.2：
Gaussian Pulses / 3.2.1：
Chirped Gaussian Pulses / 3.2.2：
Hyperbolic-Secant Pulses / 3.2.3：
Super-Gaussian Pulses / 3.2.4：
Experimental Results / 3.2.5：
Third-Order Dispersion / 3.3：
Changes in Pulse Shape / 3.3.1：
Broadening Factor / 3.3.2：
Arbitrary-Shape Pulses / 3.3.3：
Ultrashort-Pulse Measurements / 3.3.4：
Dispersion Management / 3.4：
GVD-Induced Limitations / 3.4.1：
Dispersion Compensation / 3.4.2：
Compensation of Third-Order Dispersion / 3.4.3：
Self-Phase Modulation / 4：
SPM-Induced Spectral Broadening / 4.1：
Nonlinear Phase Shift / 4.1.1：
Changes in Pulse Spectra / 4.1.2：
Effect of Pulse Shape and Initial Chirp / 4.1.3：
Effect of Partial Coherence / 4.1.4：
Effect of Group-Velocity Dispersion / 4.2：
Pulse Evolution / 4.2.1：
Optical Wave Breaking / 4.2.2：
Effect of Third-Order Dispersion / 4.2.4：
Self-Steepening / 4.3：
Effect of GVD on Optical Shocks / 4.3.2：
Intrapulse Raman Scattering / 4.3.3：
Optical Solitons / 5：
Modulation Instability / 5.1：
Linear Stability Analysis / 5.1.1：
Gain Spectrum / 5.1.2：
Experimental Observation / 5.1.3：
Ultrashort Pulse Generation / 5.1.4：
Impact on Lightwave Systems / 5.1.5：
Fiber Solitons / 5.2：
Inverse Scattering Method / 5.2.1：
Fundamental Soliton / 5.2.2：
Higher-Order Solitons / 5.2.3：
Experimental Confirmation / 5.2.4：
Soliton Stability / 5.2.5：
Other Types of Solitons / 5.3：
Dark Solitons / 5.3.1：
Dispersion-Managed Solitons / 5.3.2：
Bistable Solitons / 5.3.3：
Perturbation of Solitons / 5.4：
Perturbation Methods / 5.4.1：
Soliton Amplification / 5.4.2：
Soliton Interaction / 5.4.4：
Higher-Order Effects / 5.5：
Propagation of Femtosecond Pulses / 5.5.1：
Polarization Effects / 6：
Nonlinear Birefringence / 6.1：
Origin of Nonlinear Birefringence / 6.1.1：
Coupled-Mode Equations / 6.1.2：
Elliptically Birefringent Fibers / 6.1.3：
Nondispersive XPM / 6.2：
Optical Kerr Effect / 6.2.2：
Pulse Shaping / 6.2.3：
Evolution of Polarization State / 6.3：
Analytic Solution / 6.3.1：
Poincare-Sphere Representation / 6.3.2：
Polarization Instability / 6.3.3：
Polarization Chaos / 6.3.4：
Vector Modulation Instability / 6.4：
Low-Birefringence Fibers / 6.4.1：
High-Birefringence Fibers / 6.4.2：
Isotropic Fibers / 6.4.3：
Birefringence and Solitons / 6.4.4：
Soliton-Dragging Logic Gates / 6.5.1：
Vector Solitons / 6.5.4：
Random Birefringence / 6.6：
Polarization State of Solitons / 6.6.1：
Cross-Phase Modulation / 7：
XPM-Induced Nonlinear Coupling / 7.1：
Nonlinear Refractive Index / 7.1.1：
Coupled NLS Equations / 7.1.2：
Propagation in Birefringent Fibers / 7.1.3：
XPM-Induced Modulation Instability / 7.2：
XPM-Paired Solitons / 7.2.1：
Bright-Dark Soliton Pair / 7.3.1：
Bright-Gray Soliton Pair / 7.3.2：
Other Soliton Pairs / 7.3.3：
Spectral and Temporal Effects / 7.4：
Asymmetric Spectral Broadening / 7.4.1：
Asymmetric Temporal Changes / 7.4.2：
Applications of XPM / 7.4.3：
XPM-Induced Pulse Compression / 7.5.1：
XPM-Induced Optical Switching / 7.5.2：
XPM-Induced Nonreciprocity / 7.5.3：
Stimulated Raman Scattering / 8：
Basic Concepts / 8.1：
Raman-Gain Spectrum / 8.1.1：
Raman Threshold / 8.1.2：
Coupled Amplitude Equations / 8.1.3：
Quasi-Continuous SRS / 8.2：
Single-Pass Raman Generation / 8.2.1：
Raman Fiber Lasers / 8.2.2：
Raman Fiber Amplifiers / 8.2.3：
Raman-Induced Crosstalk / 8.2.4：
SRS with Short Pump Pulses / 8.3：
Pulse-Propagation Equations / 8.3.1：
Nondispersive Case / 8.3.2：
Effects of GVD / 8.3.3：
Synchronously Pumped Raman Lasers / 8.3.4：
Soliton Effects / 8.4：
Raman Solitons / 8.4.1：
Raman Soliton Lasers / 8.4.2：
Soliton-Effect Pulse Compression / 8.4.3：
Effect of Four-Wave Mixing / 8.5：
Stimulated Brillouin Scattering / 9：
Physical Process / 9.1：
Brillouin-Gain Spectrum / 9.1.2：
Quasi-CW SBS / 9.2：
Coupled Intensity Equations / 9.2.1：
Brillouin Threshold / 9.2.2：
Gain Saturation / 9.2.3：
Dynamic Aspects / 9.2.4：
Relaxation Oscillations / 9.3.1：
Modulation Instability and Chaos / 9.3.3：
Transient Regime / 9.3.4：
Brillouin Fiber Lasers / 9.4：
CW Operation / 9.4.1：
Pulsed Operation / 9.4.2：
SBS Applications / 9.5：
Brillouin Fiber Amplifiers / 9.5.1：
Fiber Sensors / 9.5.2：
Parametric Processes / 10：
Origin of Four-Wave Mixing / 10.1：
Theory of Four-Wave Mixing / 10.2：
Approximate Solution / 10.2.1：
Effect of Phase Matching / 10.2.3：
Ultrafast FWM / 10.2.4：
Phase-Matching Techniques / 10.3：
Physical Mechanisms / 10.3.1：
Phase Matching in Multimode Fibers / 10.3.2：
Phase Matching in Single-Mode Fibers / 10.3.3：
Phase Matching in Birefringent Fibers / 10.3.4：
Parametric Amplification / 10.4：
Gain and Bandwidth / 10.4.1：
Pump Depletion / 10.4.2：
Parametric Amplifiers / 10.4.3：
Parametric Oscillators / 10.4.4：
FWM Applications / 10.5：
Wavelength Conversion / 10.5.1：
Phase Conjugation / 10.5.2：
Squeezing / 10.5.3：
Supercontinuum Generation / 10.5.4：
Second-Harmonic Generation / 10.6：
Physical Mechanism / 10.6.1：
Simple Theory / 10.6.3：
Quasi-Phase-Matching Technique / 10.6.4：
Decibel Units / Appendix A：
Acronyms / Appendix B：
Index
Preface
Introduction / 1：
Historical Perspective / 1.1：
6.

図書
図書
6. Proceedings of the technical program : NEPCON West '95 : conference: February 26-March 2, 1995, exposition: Febtuary 28-March 2, 1995, Anaheim Convention Center, Anaheim, California (v. 1 ; v. 2 ; v. 3)
National Electronic Packaging and Production Conference
出版情報: Norwalk, CT : Reed Exhibition Companies, c1995  3 v. ; 28 cm
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7.

図書
図書
7. Interfaces in crystalline materials
A.P. Sutton and R.W. Balluffi
出版情報: Oxford : Clarendon Press , New York : Oxford University, 1995  xxxii, 819 p. ; 25 cm
シリーズ名: Monographs on the physics and chemistry of materials ; 51
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List of symbols
Glossary
Interfacial Structure / Part I：
The geometry of interfaces / 1：
Introduction / 1.1：
All the group theory we need / 1.2：
The relationship between two crystals / 1.3：
Crystals and lattices / 1.3.1：
Vector and coordinate transformations / 1.3.2：
Descriptions of lattice rotations / 1.3.3：
Vector and matrix representations / 1.3.3.1：
The Frank-Rodrigues map / 1.3.3.2：
Fundamental zones / 1.3.3.3：
Quaternions / 1.3.3.4：
Geometrical specification of an interface / 1.4：
Macroscopic and microscopic geometrical degrees of freedom / 1.4.1：
Macroscopic geometrical degrees of freedom of an arbitrary interface / 1.4.2：
Grain boundaries in cubic materials / 1.4.3：
The median lattice and the mean boundary plane / 1.4.3.1：
Tilt and twist components / 1.4.3.2：
Symmetric and asymmetric tilt boundaries / 1.4.3.3：
Bicrystallography / 1.5：
Outline of crystallographic methodology / 1.5.1：
Introduction to Seitz symbols / 1.5.3：
Symmetry of dichromatic patterns / 1.5.4：
Symmetry of dichromatic complexes / 1.5.5：
Symmetry of ideal bicrystals / 1.5.6：
Symmetry of real bicrystals / 1.5.7：
Two examples / 1.6：
Lattice matched polar-non-polar epitaxial interfaces / 1.6.1：
Lattice matched metal-silicide silicon interfaces / 1.6.2：
Classification of isolated interfacial line defects / 1.7：
General formulation / 1.7.1：
Interfacial dislocations / 1.7.2：
DSC dislocations / 1.7.2.1：
Supplementary displacement dislocations / 1.7.2.2：
Relaxation displacement dislocations / 1.7.2.3：
Non-holosymmetric crystals and interfacial defects / 1.7.2.4：
Interfacial disclinations and dispirations / 1.7.2.5：
The morphologies of embedded crystals / 1.8：
Quasiperiodicity and incommensurate interfaces / 1.9：
References
Dislocation models for interfaces / 2：
Classification of interfacial dislocations / 2.1：
The Frank-Bilby equation / 2.3：
Comments on the Frank-Bilby equation and the dislocation content of an interface / 2.4：
Frank's formula / 2.5：
The O-lattice / 2.6：
The geometry of discrete dislocation arrays in interfaces / 2.7：
The general interface / 2.7.1：
Application to a grain boundary with arbitrary geometrical parameters / 2.7.2：
Grain boundaries containing one and two sets of dislocations / 2.7.3：
Epitaxial interfaces / 2.7.4：
Local dislocation interactions / 2.8：
Pt-NiO interfaces / 2.9：
A1-A1[subscript 3] Ni eutectic interfaces / 2.9.2：
Elastic fields of interfaces / 2.10：
Stress and distortion fields of grain boundaries in isotropic elasticity / 2.10.1：
Grain boundary energies / 2.10.3：
Stress fields of heterophase interfaces in isotropic elasticity / 2.10.4：
Dislocation arrays at interfaces in anisotropic elasticity / 2.10.5：
Isotropic elastic analysis of epitaxial interfaces / 2.10.6：
Stress fields of precipitates and non-planar interfaces / 2.10.7：
Degree of localization of the cores of interfacial dislocations / 2.11：
Lattice theories of dislocation arrays / 2.11.1：
Peierls-Nabarro model for an isolated edge dislocation / 2.11.2.1：
Peierls-Nabarro model for a symmetrical tilt boundary / 2.11.2.3：
The van der Merwe model for a symmetrical tilt boundary / 2.11.2.4：
Atomistic models using computer simulation and interatomic forces / 2.11.3：
Experimental observations of arrays of interfacial dislocations / 2.12：
Mainly room-temperature observations / 2.12.1：
High-temperature observations / 2.12.2：
Models of interatomic forces at interfaces / 3：
Density functional theory / 3.1：
The variational principle and the Kohn-Sham equations / 3.2.1：
The Harris-Foulkes energy functional / 3.2.2：
Valence and core electrons: pseudopotentials / 3.3：
The force theorem and Hellmann-Feynman forces / 3.4：
Cohesion and pair potentials in sp-bonded metals / 3.5：
Effective medium theory / 3.6：
The embedded atom method / 3.7：
Tight binding models / 3.8：
The diatomic molecule / 3.8.1：
Bands, bonds, and Green functions / 3.8.3：
Moments of the spectral density matrix / 3.8.4：
The tight binding bond (TBB) model / 3.8.5：
The second moment approximation / 3.8.6：
Beyond the second moment approximation / 3.8.7：
Temperature dependence of atomic interactions / 3.9：
Ionic bonding / 3.10：
Interatomic forces at heterophase interfaces / 3.11：
Models and experimental observations of atomic structure / 4：
Introduction: classification of interfaces / 4.1：
Diffuse interfaces / 4.2：
Heterophase interfaces in systems with a miscibility gap / 4.2.1：
Antiphase domain boundaries in systems with long-range order / 4.2.2：
Displacive transformation interfaces in systems near a mechanical instability / 4.2.3：
Sharp homophase interfaces: large-angle grain boundaries / 4.3：
Large-angle grain boundaries in metals / 4.3.1：
The significance of the rigid body displacement parallel to the boundary plane / 4.3.1.1：
The significance of the expansion normal to the boundary plane / 4.3.1.2：
Testing the analytic model / 4.3.1.3：
The significance of individual atomic relaxation / 4.3.1.4：
Discussion: singular, vicinal, and general interfaces / 4.3.1.5：
Methods of computer simulation / 4.3.1.6：
The polyhedral unit model / 4.3.1.7：
The structural unit model / 4.3.1.8：
Three-dimensional grain boundary structures / 4.3.1.9：
The influence of temperature / 4.3.1.10：
Grain boundaries in ionic crystals / 4.3.2：
Grain boundaries in covalent crystals / 4.3.3：
Sharp heterophase interfaces / 4.4：
Metal-metal interfaces / 4.4.1：
Metal-insulator interfaces / 4.4.3：
Metal-semiconductor interfaces / 4.4.4：
Interfacial Thermodynamics / Part II：
Thermodynamics of interfaces / 5：
The interface free energy / 5.1：
Additional interface thermodynamic quantities and relationships between them / 5.3：
Introduction of the interface stress and strain variables / 5.4：
Introduction of the geometric thermodynamic variables / 5.5：
Dependence of [sigma] on the interface inclination / 5.6：
The Wulff plot / 5.6.1：
Equilibrium shape (Wulff form) of embedded second-phase particle / 5.6.2：
Faceting of initially flat interface / 5.6.3：
The capillarity vector, [xi] / 5.6.4：
Capillary pressure associated with smoothly curved interface / 5.6.5：
Equilibrium lattice solubility at a smoothly curved heterophase interface / 5.6.6：
Equilibrium solubility at embedded second-phase particle / 5.6.7：
Equilibrium interface configurations at interface junction lines / 5.6.8：
Further thermodynamic relationships involving changes in interface inclination / 5.6.9：
Dependence of [sigma] on the crystal misorientation / 5.7：
Dependence of [sigma] on simultaneous variations of the interface inclination and crystal misorientation / 5.8：
Chemical potentials and diffusion potentials, M[subscript i], in non-uniform systems containing interfaces / 5.9：
Analysis of system at equilibrium; introduction of the diffusion potential, M[subscript i] / 5.9.1：
Incoherent interface / 5.9.2.1：
Coherent interface / 5.9.2.2：
Summary / 5.9.2.3：
Diffusional transport in non-equilibrium systems / 5.9.3：
Interface phases and phase transitions / 6：
Interface phase equilibria / 6.1：
Interface phase transitions / 6.3：
Non-congruent phase transitions / 6.3.1：
Faceting of initially flat interfaces / 6.3.1.1：
Faceting of embedded particle interfaces / 6.3.1.2：
Interface dissociation / 6.3.1.3：
Congruent phase transitions / 6.3.2：
Various transitions induced by changes in temperature, composition, or crystal misorientation / 6.3.2.1：
Interface wetting by a solid phase / 6.3.2.2：
Interface wetting by a liquid phase in alloy systems / 6.3.2.3：
Grain boundary melting in a one-component system / 6.3.2.4：
Segregation of solute atoms to interfaces / 7：
Overview of some of the main features of interface segregation in metals / 7.1：
Physical models for the interaction between solute atoms and interfaces / 7.3：
Elastic interaction models / 7.3.1：
Size accommodation model / 7.3.2.1：
Hydrostatic pressure (P[Delta]V) and elastic inhomogeneity models / 7.3.2.2：
Further elastic models / 7.3.2.3：
Atomistic models at 0 K / 7.3.3：
Electronic interaction models / 7.3.4：
Statistical mechanical models of segregation / 7.4：
Regular solution model / 7.4.1：
Mean field models / 7.4.3：
McLean isotherm / 7.4.3.1：
Fowler-Guggenheim isotherm / 7.4.3.2：
Multiple segregation site models / 7.4.3.3：
Beyond mean field models / 7.4.4：
Some additional models / 7.4.5：
Atomistic models at a finite temperature / 7.5：
Interface segregation in ionic solids / 7.6：
Interfacial Kinetics / Part III：
Diffusion at interfaces / 8：
Fast diffusion along interfaces of species which are substitutional in the crystal lattice / 8.1：
Slab model and regimes of diffusion behaviour / 8.2.1：
Mathematical analysis of the diffusant distribution in the type A, B, and C regimes / 8.2.2：
Experimental observations / 8.2.3：
Some major results for diffusion along interfaces / 8.2.3.1：
Effects of interface structure / 8.2.3.2：
Mechanisms for fast grain boundary diffusion / 8.2.4：
Equilibrium point defects in the grain boundary core / 8.2.4.1：
'Ring', vacancy, interstitialcy, and interstitial mechanisms / 8.2.4.2：
Models for grain boundary self-diffusivities via the different mechanisms / 8.2.5：
Vacancy mechanism / 8.2.5.1：
Interstitialcy mechanism / 8.2.5.2：
Interstitial mechanism / 8.2.5.3：
General characteristics of the models for boundary self-diffusion / 8.2.6：
On the question of the mechanism (or mechanisms) of fast grain boundary diffusion / 8.2.7：
Metals / 8.2.7.1：
Ionic materials / 8.2.7.2：
Covalent materials / 8.2.7.3：
Diffusion along interfaces of solute species which are interstitial in the crystal lattice / 8.3：
Slow diffusion across interfaces in fast ion conductors / 8.4：
Diffusion-induced grain boundary motion (DIGM) / 8.5：
Conservative motion of interfaces / 9：
'Conservative' versus 'non-conservative' motion of interfaces / 9.1：
Driving pressures for conservative motion / 9.1.2：
Basic mechanisms: correlated versus uncorrelated processes / 9.1.3：
Impediments to interface motion / 9.1.4：
Mechanisms and models for sharp interfaces / 9.2：
Glissile motion of interfacial dislocations / 9.2.1：
Small-angle grain boundaries / 9.2.1.1：
Large-angle grain boundaries / 9.2.1.2：
Heterophase interfaces / 9.2.1.3：
Glide and climb of interfacial dislocations / 9.2.2：
Shuffling motion of pure steps / 9.2.2.1：
Uncorrelated atom shuffling and/or diffusional transport / 9.2.4：
Uncorrelated atom shuffling / 9.2.4.1：
Uncorrelated diffusional transport / 9.2.4.2：
Solute atom drag / 9.2.5：
Experimental observations of non-glissile (thermally activated) grain boundary motion in metals / 9.2.6：
General large-angle grain boundaries / 9.2.6.1：
Singular (or vicinal) large-angle grain boundaries / 9.2.6.2：
Solute atom drag effects / 9.2.6.3：
Mechanisms and models for diffuse interfaces / 9.2.6.4：
Propagation of non-linear elastic wave (or, alternatively, coherency dislocations) / 9.3.1：
Self-diffusion / 9.3.2：
Equations of interface motion / 9.4：
Motion when v = v(n) / 9.4.1：
Motion of curved interfaces under capillary pressure / 9.4.2：
More general conservative motion / 9.4.3：
Impediments to interface motion due to pinning / 9.5：
Pinning effects due to embedded particles / 9.5.1：
Pinning at stationary particles at low temperatures / 9.5.1.1：
Thermally activated unpinning / 9.5.1.2：
Diffusive motion of pinned particles along with the interface / 9.5.1.3：
Pinning at free surface grooves / 9.5.2：
Non-conservative motion of interfaces: interfaces as sources/sinks for diffusional fluxes of atoms / 10：
General aspects of interfaces as sources/sinks / 10.1：
'Diffusion-controlled', 'interface-controlled', and 'mixed' kinetics / 10.2.1：
Dissipation of energy during source/sink action / 10.2.2：
The maximum energy available to drive the source/sink action / 10.2.3：
Grain boundaries as sources/sinks for fluxes of atoms / 10.3：
Models / 10.3.1：
Models for singular or vicinal grain boundaries / 10.3.2.2：
Models for general grain boundaries / 10.3.3.2：
Sharp heterophase interfaces as sources/sinks for fluxes of atoms / 10.3.3.3：
Singular or vicinal heterophase interfaces / 10.4.1：
General heterophase interfaces / 10.4.1.2：
Growth, coarsening, shape-equilibration, and shrinkage of small precipitate particles / 10.4.2：
Growth of phases in the form of flat parallel layers / 10.4.2.2：
Annealing of supersaturated vacancies / 10.4.2.3：
Diffusional accommodation of boundary sliding at second phase particles / 10.4.2.4：
Diffuse heterophase interfaces as sources/sinks for solute atoms / 10.5：
On the question of interface stability during source/sink action / 10.6：
Interfacial Properties / Part IV：
Electronic properties of interfaces / 11：
The Schottky model / 11.1：
The Bardeen model / 11.2.3：
Metal-induced gap states (MIGS) / 11.2.4：
The defect model / 11.2.5：
The development of the Schottky barrier as a function of metal coverage / 11.2.6：
Schottky barriers on Si / 11.2.7：
Discussion of models for Schottky barriers / 11.2.8：
Inhomogeneous Schottky barriers / 11.2.9：
Semiconductor heterojunctions / 11.3：
The band offsets / 11.3.1：
Grain boundaries in metals / 11.4：
Grain boundaries in semiconductors / 11.5：
Grain boundaries in high temperature superconductors / 11.6：
Mechanical properties of interfaces / 12：
Compatibility stresses in bicrystals and polycrystals / 12.1：
Compatibility stresses caused by applied elastic stress / 12.2.1：
Compatibility stresses caused by plastic straining / 12.2.2：
Compatibility stresses caused by heating/cooling / 12.2.3：
Elastic interactions between dislocations and interfaces / 12.3：
Interfaces as sinks, or traps, for lattice dislocations / 12.4：
Large-angle grain boundaries and heterophase boundaries / 12.4.1：
Singular boundaries / 12.4.3.1：
General boundaries / 12.4.3.2：
On the global equilibration of impinged lattice dislocations / 12.4.4：
Interfaces as sources of both interfacial and lattice dislocations / 12.5：
Interfaces as sources of interfacial dislocations / 12.5.1：
Interfaces as sources of lattice dislocations / 12.5.2：
Singular interfaces / 12.5.2.1：
General interfaces / 12.5.2.2：
Interfaces as barriers to the glide of lattice dislocations (slip) / 12.6：
Grain boundaries / 12.6.1：
Effects of interfaces on the plastic deformation of bicrystals and polycrystals at low temperatures / 12.6.2：
Homophase bicrystals and polycrystals / 12.7.1：
Heterophase bicrystals and polycrystals / 12.7.2：
Role of interfaces in the plastic deformation of bicrystals and polycrystals at high temperatures / 12.8：
Interface sliding / 12.8.1：
Sliding at an ideally planar grain boundary / 12.8.1.1：
Sliding at a non-planar grain boundary by means of elastic accommodation / 12.8.1.2：
Sliding at a non-planar grain boundary by means of diffusional accommodation / 12.8.1.3：
Sliding at a non-planar grain boundary by means of plastic flow accommodation in the lattice / 12.8.1.4：
Experimental observations of sliding at interfaces / 12.8.1.5：
Creep of polycrystals / 12.8.2：
Creep of homophase polycrystals controlled by diffusional transport / 12.8.2.1：
Creep of homophase polycrystals controlled by boundary sliding / 12.8.2.2：
Creep of homophase polycrystals controlled by movement of lattice dislocations / 12.8.2.3：
Further aspects of the creep of polycrystals / 12.8.2.4：
Fracture at homophase interfaces / 12.9：
Overview of the different types of fracture observed experimentally in homophase polycrystals / 12.9.1：
Propagation of cleavage cracks / 12.9.2：
Crack propagation in a single crystal / 12.9.2.1：
Crack propagation along a grain boundary / 12.9.2.2：
Crack propagation in homophase polycrystals / 12.9.2.3：
Growth and coalescence of cavities at grain boundaries at low temperatures by plastic flow due to dislocation glide / 12.9.3：
Growth and coalescence of cavities at grain boundaries at high temperatures by diffusion, power-law creep, and boundary sliding / 12.9.4：
Initiation of cavities / 12.9.4.1：
Growth of cavities / 12.9.4.2：
Coalescence of cavities and complete intergranular fracture / 12.9.4.3：
Fracture at heterophase interfaces / 12.10：
Index
List of symbols
Glossary
Interfacial Structure / Part I：
8.

図書
図書
8. Quantum mechanics : an introduction for device physicists and electrical engineers. 2nd ed. (: pbk)
David K. Ferry
出版情報: Bristol [UK] ; Philadelphia : Institute of Physics Pub., c1995  x, 345 p. ; 24 cm
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目次情報: 続きを見る
Preface to the first edition
Preface to the second edition
Waves and particles / 1：
Introduction / 1.1：
Light as particles--the photoelectric effect / 1.2：
Electrons as waves / 1.3：
Position and momentum / 1.4：
Expectation of the position / 1.4.1：
Momentum / 1.4.2：
Non-commuting operators / 1.4.3：
Returning to temporal behaviour / 1.4.4：
Summary / 1.5：
References
Problems
The Schrodinger equation / 2：
Waves and the differential equation / 2.1：
Density and current / 2.2：
Some simple cases / 2.3：
The free particle / 2.3.1：
A potential step / 2.3.2：
The infinite potential well / 2.4：
The finite potential well / 2.5：
The triangular well / 2.6：
Coupled potential wells / 2.7：
The time variation again / 2.8：
The Ehrenfest theorem / 2.8.1：
Propagators and Green's functions / 2.8.2：
Numerical solution of the Schrodinger equation / 2.9：
Tunnelling / 3：
The tunnel barrier / 3.1：
The simple rectangular barrier / 3.1.1：
The tunnelling probability / 3.1.2：
A more complex barrier / 3.2：
The double barrier / 3.3：
Simple, equal barriers / 3.3.1：
The unequal-barrier case / 3.3.2：
Shape of the resonance / 3.3.3：
Approximation methods--the WKB method / 3.4：
Bound states of a general potential / 3.4.1：
Tunnelling devices / 3.4.2：
A current formulation / 3.5.1：
The p-n junction diode / 3.5.2：
The resonant tunnelling diode / 3.5.3：
Resonant interband tunnelling / 3.5.4：
Self-consistent simulations / 3.5.5：
The Landauer formula / 3.6：
Periodic potentials / 3.7：
Velocity / 3.7.1：
Superlattices / 3.7.2：
Single-electron tunnelling / 3.8：
Bloch oscillations / 3.8.1：
The double-barrier quantum dot / 3.8.2：
The harmonic oscillator / 4：
Hermite polynomials / 4.1：
The generating function / 4.2：
Motion of the wave packet / 4.3：
A simpler approach with operators / 4.4：
Quantizing the LC-circuit / 4.5：
The vibrating lattice / 4.6：
Motion in a quantizing magnetic field / 4.7：
Connection with semi-classical orbits / 4.7.1：
Adding lateral confinement / 4.7.2：
The quantum Hall effect / 4.7.3：
Basis functions, operators, and quantum dynamics / 5：
Position and momentum representation / 5.1：
Some operator properties / 5.2：
Time-varying expectations / 5.2.1：
Hermitian operators / 5.2.2：
On commutation relations / 5.2.3：
Linear vector spaces / 5.3：
Some matrix properties / 5.3.1：
The eigenvalue problem / 5.3.2：
Dirac notation / 5.3.3：
Fundamental quantum postulates / 5.4：
Translation operators / 5.4.1：
Discretization and superlattices / 5.4.2：
Time as a translation operator / 5.4.3：
Canonical quantization / 5.4.4：
Stationary perturbation theory / 6：
The perturbation series / 6.1：
Some examples of perturbation theory / 6.2：
The Stark effect in a potential well / 6.2.1：
The shifted harmonic oscillator / 6.2.2：
Multiple quantum wells / 6.2.3：
Coulomb scattering / 6.2.4：
An alternative technique--the variational method / 6.3：
Time-dependent perturbation theory / 7：
Electron-phonon scattering / 7.1：
The interaction representation / 7.3：
Exponential decay and uncertainty / 7.4：
A scattering-state basis--the T-matrix / 7.5：
The Lippmann-Schwinger equation / 7.5.1：
Coulomb scattering again / 7.5.2：
Orthogonality of the scattering states / 7.5.3：
Motion in centrally symmetric potentials / 8：
The two-dimensional harmonic oscillator / 8.1：
Rectangular coordinates / 8.1.1：
Polar coordinates / 8.1.2：
Splitting the angular momentum states with a magnetic field / 8.1.3：
Spectroscopy of a harmonic oscillator / 8.1.4：
The hydrogen atom / 8.2：
The radial equation / 8.2.1：
Angular solutions / 8.2.2：
Angular momentum / 8.2.3：
Atomic energy levels / 8.3：
The Fermi-Thomas model / 8.3.1：
The Hartree self-consistent potential / 8.3.2：
Corrections to the centrally symmetric potential / 8.3.3：
The covalent bond in semiconductors / 8.3.4：
Hydrogenic impurities in semiconductors / 8.4：
Electrons and anti-symmetry / 9：
Symmetric and anti-symmetric wave functions / 9.1：
Spin angular momentum / 9.2：
Systems of identical particles / 9.3：
Fermion creation and annihilation operators / 9.4：
Field operators / 9.5：
Connection with the many-electron formulation / 9.5.1：
Quantization of the Hamiltonian / 9.5.2：
The two-electron wave function / 9.5.3：
The homogeneous electron gas / 9.5.4：
The Green's function / 9.6：
The equations of motion / 9.6.1：
The Hartree approximation / 9.6.2：
Connection with perturbation theory / 9.6.3：
Dyson's equation / 9.6.4：
The self-energy / 9.6.5：
Solutions to selected problems
Index
Preface to the first edition
Preface to the second edition
Waves and particles / 1：
9.

電子ブック
ＥＢ
9. IEEE Std 1003.2d-1994: IEEE Standard for Information Technology--Portable Operating System Interface (POSIX(R))--Part 2: Shell and Utilities--Amendment 1: Batch Environment
出版情報: IEEE Electronic Library (IEL) Standards , IEEE, 1995
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10.

電子ブック
ＥＢ
10. ISO/IEC 15802-2:1995 (ANSI/IEEE Std 802.1b-1995 ): ISO/IEC 15802-2:1995: Information technology - Telecommunications and information exchange between systems - Local and metropolitan area networks - Common specifications - Part 2: LAN/MAN management
出版情報: IEEE Electronic Library (IEL) Standards , IEEE, 1995
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