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1.

図書
図書
1. Germanium-silicon strained layers and heterostructures
Suresh C. Jain
出版情報: Boston : Academic Press, c1994  xii, 302 p. ; 24 cm
シリーズ名: Advances in electronics and electron physics : supplement / edited by L. Marton ; assistant editor, Claire Marton ; editorial board, T. E. Allibone ... [et al.] ; Supplement ; 24
2.

図書
図書
2. High-speed heterostructure devices : from device concepts to circuit modeling
Patrick Roblin and Hans Rohdin
出版情報: Cambridge : Cambridge University Press, c2002  xxxiv, 688 p. ; 26 cm
目次情報: 続きを見る
Preface
Acknowledgements
Heterostructure materials / 1：
Semiclassical theory of heterostructures / 2：
Quantum theory of heterostructures / 3：
Quantum heterostructure devices / 4：
Scattering processes in heterostructures / 5：
Scattering-assisted tunneling / 6：
Frequency response of quantum devices from DC to infrared / 7：
Charge control of the two-dimensional electron gas / 8：
High electric field transport / 9：
I-V model of the MODFET / 10：
Small-and large-signal AC models for the long-channel MODFET / 11：
Small-and large-signal AC models for the short-channel MODFET / 12：
DC and microwave electrothermal modeling of FETs / 13：
Analytical DC analysis of short-gate MODFETs / 14：
Small signal AC analysis of the short-gate velocity-saturated MODFET / 15：
Gate resistance and the Schottky-barrier interface / 16：
MODFET high-frequency performance / 17：
Modeling high-performance HBTs / 18：
Practical high-frequency HBTs / 19：
Index
Preface
Acknowledgements
Heterostructure materials / 1：
3.

図書
図書
3. Properties of strained and relaxed silicon germanium
edited by Erich Kasper
出版情報: London : INSPEC, IEE, c1995  xiv, 232 p. ; 29 cm
シリーズ名: EMIS datareviews series ; no. 12
4.

図書
図書
4. Group III-nitrides and their heterostructures : growth, characterization and applications
guest editors, Friedhelm Bechstedt, Bruno K. Meyer, and Martin Stutzmann
出版情報: Weinheim : Wiley-VCH, c2003  [1567]-1951 p. ; 25 cm
シリーズ名: Physica status solidi ; C . Conferences and critical reviews ; 0, 6, 2003
目次情報: 続きを見る
Preface
Deposition and structural properties
Growth of GaN quasi-substrates by hydride vapor phase epitaxy / Wei Zhang ; B.K. Meyer
Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon / A. Dadgar, et al.
Molecular beam epitaxy of cubic III-nitrides on GaAs substrates / D.J. As, et al.
Freestanding GaN-substrates and devices / Claudio R. Miskys, et al.
Surfactants and antisurfactants on group-III-nitride surfaces / J. Neugebauer
Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy / D. Gerthsen, et al.
A theoretical investigation of dislocations in cubic and hexagonal gallium nitride / A.T. Blumenau, et al.
Lattice dynamics in GaN and AIN probed with first-and second-order Raman spectroscopy / U. Haboeck, et al.
Electronic and optical properties
Electronic and vibrational properties of group-III nitrides: Ab initio studies / F. Bechstedt, et al.)
Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by Infrared Spectroscopic Ellipsometry / A. Kasic, et al.
Mg in GaN: the structure of the acceptor and the electrical activity / H. Alves, et al.
Local vibrational modes and compensation effects in Mg-doped GaN / A. Hoffmann, et al.
Optical micro-characterization of group-III-nitrides: correlation of structural, electronic and optical properties / J. Christen, et al.
Optical properties of nitride heterostructures (Andreas Hangleiter)
The origin of the PL photoluminescence Stokes shift in ternary group-III nitrides: field effects and localization / M. Strassburg, et al.
Devices and device issues
GaN based laser diodes - epitaxial growth and device fabrication / T. Bottcher, et al.
Optical gain, gain saturation, and waveguiding in group III-nitride heterostructures / M. Rowe, et al.
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures
Sensor applications / M. Eickhoff, et al.Part B：
Influence of polarization of the properties of GaN based FET structures / M. Neuburger, et al.
Gallium-nitride-based devices on silicon / A, Dadgar, et al.
Preface
Deposition and structural properties
Growth of GaN quasi-substrates by hydride vapor phase epitaxy / Wei Zhang ; B.K. Meyer
5.

図書
図書
5. Superlattices and other heterostructures : symmetry and optical phenomena. 2nd ed (: [pbk.])
E.L. Ivchenko, G.E. Pikus ; translated by G.P. Skrebtsov
出版情報: New York : Springer, c1997  xiii, 382 p. ; 25 cm
シリーズ名: Springer series in solid-state sciences ; 110
6.

図書
図書
6. Spin-orbit coupling effects in two-dimensional electron and hole systems (: softcover)
Roland Winkler
出版情報: Berlin ; Tokyo : Springer, c2003  xii, 228 p. ; 24 cm
シリーズ名: Springer tracts in modern physics : Ergebnisse der exakten Naturwissenschaften / editor, G. Höhler ; v. 191 . Solid-state physics / editors, Andrei Ruckenstein, Peter Wölfle
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