Advanced Laser Spectroscopy in Combustion, Catalysis and Medicine / J Wolfrum
Local Flame/Flow Characterisation in Turbulent Flame Propagation / S Jarvis ; G K Hargrave
Fibre Optic Sensor Arrangements for the Analysis of Flame Propagation in Standard Spark Ignited Multicylinder Engines / E Winklhofer ; C Beidl ; H Philipp ; W Piock
Planar Laser Induced Fluorescence Measurements of Fuel Concentration in a Gasoline Direct Injection Optical Engine / S Gashi ; Y Yan ; R D Lockett ; C Arcoumanis
Acoustic-optic Frequency Switching for Two-Wavelength Planar Doppler Velocimetry / H D Ford ; D S Nobes ; R P Tatam
An Investigation of Underexpanded Free Jets from Straight Nozzles / L N Ung
Instantaneous Three-Dimensional Visualization of Concentration Distributions in Turbulent Flows with a Single Laser / A Hoffmann ; F Zimmermann ; C Schulz
Characterisation of Drop Impact on Heated Surfaces by Optical Techniques / G E Cossali ; M Marengo ; M Santini
Time-Resolved Particle Image Velocimetry: Analysis of Random Errors / K Anandarajah ; N A Halliwell
A High Power Single-Mode Tunable Laser for Nonlinear Optical Diagnostics in Combustion / K Bultitude ; P Ewart
Engine Related Applications / Section 2：
Optical Diagnostics for Internal Combustion Engines / H Zhao
Temporal Measurements of Mass Concentration of Soot Aggregates in the Diesel Exhaust by Two-Color Extinction Method / T Kamimoto ; T Nakajima ; Y Kawashima
Characterization of Mixture Distribution and Combustion in a DISI Optical Engine Under Late Injection Mode / D-S Choi ; Y Lee ; J Choi ; C Bae
An Investigation of the Effect of Nozzle Characteristics on Liquid Atomisation in a GDI Injector / Y C Khoo
Development of a Wall Film Thickness Measuring Device / R Lindgren ; R Block ; I Denbratt
Simulating the Effect of Multiple Scattering on Images of Dense Sprays / M C Jermy ; A Allen ; A K Vuorenkoski
Laser and Optical Diagnostics / Section 3：
Optical Diagnostics of Pressure and Temperature using Laser Induced Thermal Gratings / R Stevens
Fibre Optical Diagnostics for structural Condition Monitoring Applications Exemplified in the Millennium Project / Y M Gebremichael ; W Li ; B T Meggitt ; W J O Boyle ; K T V Grattan ; B McKinley ; L F Boswell
Quantitive NO-LIF Imaging in High-Pressure Flames / W G Bessler ; T Lee ; D-I Shin ; M Hofmann ; J B Jeffries ; R K Hanson
Spray Characteristics of a Multi-Hole Injector for Direct Injection Gasoline Engines / N Mitroglou ; J M Nouri
Hybrid Optical/Digital Codec for Mitigation of Optical Aberrations / S Mezouari ; A R Harvey
Effect of Chamber Pressure on the Spray Structure from a Swirl Pressure Atomiser for Direct Injection Gasoline Engines / J H Whitelaw
Quantitative Characterisation of Diesel Sprays Using Digital Imaging Techniques / J Shao ; G Greeves ; S Smith
Mobile Laser-Based Optical Triangulation System for the Measurement of Structures / S F Turner ; D M Johnson
The Interrogation of Multipoint Fibre Optic Sensor Signals Utilising Artificial Neural Network Pattern Recognition Techniques / W B Lyons ; C Flanagan ; E Lewis
Fibre Bragg Grating Coupled Fluorescent Optical Fibre Sensors / T Sun ; D I Forsyth ; S A Wade ; S Pal ; J Mandal ; W D N Pritchard ; G Garnham
Phase Response of Nonlinear Medium Induced by Transitions Between Excited Energy Levels / J S M Addasi
Saturation of Dye Solution in Principal Channel by Using Two Light Fields
Velocity Measurements / Section 4：
Particle Image Velocimetry: from Two-Dimensional to Three-Dimensional Velocity Mapping with Holographic Recording, Object Conjugate Reconstruction (OCR) and Optical Correlation
Image Fibre Bundle Based 3 Component Planar Doppler Velocimetry
Optical-Diagnostic Study of Two-Dimensional, Premixed Laminar Flames / M Fairweather
In-Plan Quantification of 3-D Velocities and Turbulence Intensities Using a Flow Visualisation Technique / A Ramadan ; S Michelet ; K C Lee ; M Yianneskis
The Development and Application of Time Resolved PIV at the University of Strathclyde / M Stickland ; T Scanlon ; T Vidinha ; W Dempster ; R Jaryczewski
Velocity Field Measurements in a Non-Premixed, Bluff-Body Burner Using Digital Particle Image Velocimetry / R Carroni ; H K Versteeg
2-D LIF Measurements of Thermo-Acoustic Phenomena in Lean Premixed Flames of a Gas Turbine Combustor / S Schenker ; R Bombach ; A Inauen ; W Kreutner ; W Hubschmid ; K Haffner ; C Motz ; B Schuermans ; M Zajadatz ; C O Paschereit
High Speed Imaging of Shocked and Detonated Gases / D A Holder ; A V Smith ; C J Barton
An Investigation of the Problem of Multiple Scattering from Seeding Particles in Laser Sheet Studies of Shock Induced Gas Mixing / M K Philpott ; D L Youngs
Biomedical Applications / Section 5：
PIV Measurements in Large-Scale Cardiovascular Models--The Importance of Dynamic Scaling / I Owen ; J D Gray ; M P Escudier
Laser Diagnostics of Dynamics Phenomena in Biological Objects: Model Measurements, Numerical Simulations, and Medical Applications / A V Priezzhev ; K B Begun ; A Y Tyurina ; O E Fedorova ; N N Firsov ; S J Matcher ; I V Meglinski
Study of Flow Characteristics and Particle Trajectories in a Model of the Human Upper Airway
Glucose Monitoring using Laser NIR Spectroscopy / V A Saetchnikov ; E A Tcherniavskaia
Author Index
Preface
Laser Diagnostics / Section 1：
Advanced Laser Spectroscopy in Combustion, Catalysis and Medicine / J Wolfrum
organised by the Electronics Division of the Institution of Electrical Engineers, in association with the Institute of Physics, Institution of Electronic and Radio Engineers
出版情報:
London : Institution of Electrical Engineers, c1981 viii, 139 p. ; 30 cm
organised by the Electronics Division of the Institution of Electrical Engineers, in association with the Institute of Mathematics and its Applications, Institute of Physics
出版情報:
London : Institution of Electrical Engineers, c1981 viii, 112 p. ; 30 cm
organisers, the Electronics Division of the Institution of Electrical Engineers in association with Institute of Physics, Institution of Electronic Radio Engineers
出版情報:
London : Institution of Electrical Engineers, c1983 viii, 315 p. ; 29 cm
organised by the Electronics Division of the Institution of Electrical Engineers in association with the Institute of Physics [and] Institution of Electronic and Radio Engineers
出版情報:
London : Institution of Electrical Engineers, c1983 vii, 129 p. ; 30 cm
organised by the Power Division of the Institution of Electrical Engineers in association with the Institute of Electrical and Electronics Engineers Inc. (Industry Applications Society), Institute of Physics
出版情報:
London : Institution of Electrical Engineers, c1984 viii, 209 p. ; 30 cm
organised by the Electronics Division of the Institution of Electrical Engineers in association with the Institute of Physics, Institution of Electronic and Radio Engineers, and with the support of the Convention of National Societies of Electrical Engineers of Western Europe (EUREL)
出版情報:
London : Institution of Electrical Engineers, c1984 ix, 171 p. ; 30 cm
sonsored by EPS-Quantum Electronics and Optics Division, IEEE/Lasers and Electro-optics Society, Optical Society of America ; in cooperation with European Physical Society, the Institute of Physics, Institution of Electrical Engineers
sonsored by EPS-Quantum Electronics and Optics Division, IEEE/Lasers and Electro-optics Society, Optical Society of America ; in cooperation with European Physical Society, the Institute of Physics, Institution of Electrical Engineers
organised by the Power Division of the Institution of Electrical Engineers, in association with the Institute of Electrical and Electronics Engineers Industry Applications Society, Institute of Physics, venue, the Institution of Electrical Engineers, London
出版情報:
London ; New York : Institution of Electrical Engineers, c1979 ix, 195 p. ; 30 cm
Conference on the Mechanical Properties of Materials at High Rates of Strain ; Institute of Physics (Great Britain) ; Institution of Mechanical Engineers ; University of Oxford. Dept. of Engineering Science
出版情報:
London : Institute of Physics, 1974 ix, 449 p. ; 26 cm
organised by the Science, Education and Technology Division of the Institution of Electrical Engineers ; in association with the: Dielectrics Society, EUREL, Institute of Physics
出版情報:
London : Institution of Electrical Engineers, c1993 xiii, 128 p. ; 30 cm
International Symposium on Compound Semiconductors (ISCS) Heinrich Welker Award
ISCS Quantum Devices Award
ISCS Young Scientist Award
Preface
Symposium Committees
Growth / Section 1：
GaAs on silicon using an oxide buffer layer / R Droopad ; J Curless ; Z Yu ; D Jordan ; Y Liang ; C Overgaard ; H Li ; T Eschrich ; J Ramdani ; L Hilt ; B Craigo ; K Eisenbeiser ; J Kulik ; P Fejes ; J Finder ; X Hu ; Y Wei ; J Edwards ; K Moore ; M O'Steen ; O Baklenov|p1
Ultra shallow GaAs sidewall tunnel junctions implemented with low-temperature area selective regrowth / Y Oyama ; T Ohno ; K Tezuka ; K Suto ; J-i Nishizawa
Growth and properties of polycrystalline GaN on ZnO/Si substrates by ECR-MBE / K Kitamura ; H Mamiya ; T Araki ; T Maruyama ; Y Nanishi
Single crystalline InN films grown on Si (111) substrates / T Yamaguchi ; K Mizuo ; Y Saito
Growth and evaluation of CdTe/Si (111) by hot wall epitaxy / G M Lalev ; J Wang ; S Abe ; K Masumoto ; M Isshiki
A surface reconstruction functioning as a micro mask during in-situ layer-by-layer etching of GaAs(111)B using AsBr[subscript 3] / Y Asaoka ; I Ihara ; K Yokoyama ; S Daicho ; N Sano ; T Kaneko
Comparative study of p-type dopants, Mg and Be in GaN grown by RF-MBE / S Sugita ; Y Watari ; G Yoshizawa ; J Sodesawa ; H Yamamizu ; K T Liu ; Y K Su ; Y Horikoshi
Area selective epitaxy of anti-dot structure by solid source MBE using MEE deposition sequence / D Okada ; H Hasegawa ; T Hasegawa ; T Saitoh
Processing and Characterization / Section 2：
Contribution of interface states and bulk traps to GaAs MIS admittance / S Kochowski ; B Paszkiewicz ; R Paszkiewicz
Electrical isolation of p-type InP and InGaAs layers by iron implantation: Effects of substrate temperature / P Too ; S Ahmed ; B J Sealy ; R Gwilliam
Inductively coupled argon plasma enhanced quantum well intermixing in InGaAs/InGaAsP laser structure / H S Djie ; J Arokiaraj ; T Mei
Annealing studies of Si-implanted GaN by Hall-effect and photoluminescence measurements / J A Fellows ; Y K Yeo ; M-Y Ryu ; R L Hengehold ; T D Steiner
Optical evaluation of spatial carrier concentration fluctuations in doped InP substrates / M Baeumler ; E Diwo ; W Jantz ; U Sahr ; G Muller ; I Grant
An "anomalous" drift of defects under electric field in CdSe and CdS single crystals / L V Borkovska ; B M Bulakh ; L Khomenkova ; N O Korsunska ; I V Markevich
Injection energy dependence of electron thermalization length in AlGaAs/GaAs quantum well structures / T Tsuruoka ; H Hashimoto ; Y Ohizumi ; S Ushioda
Optical and structural investigations of GeSiO[subscript 2] systems / T V Torchynska ; J Aguilar-Hernandez ; G Polupan ; A Kolobov
Thermal quenching of emission of self-assembled InAs quantum dots embedded into InGaAs/GaAs MQW / J L Casas Espinola ; H M Alfaro Lopez ; P G Eliseev ; A Stintz ; K J Malloy ; R Pena Sierra
Guided surface-acoustic-wave modes in AIN layers grown on SiC substrates / Y Takagaki ; P V Santos ; E Wiebicke ; O Brandt ; H-P Schonherr ; K H Ploog
Photoluminescence from deep levels in Fe-doped InP substrates / M Yamada ; M Fukuzawa
Many-body effects as probe of defects presence in heavily doped AlGaAs/InGaAs/GaAs heterostructures / V P Kunets ; Z Ya Zhuchenko ; H Kissel ; U Muller ; G G Tarasov ; W T Masselink
Two-dimensional mapping of resistivity in semi-insulating GaAs wafers with large diameter using a nondestructive technique
Sonic-stimulated temperature rise around dislocation / R K Savkina ; A B Smirnov
The cluster variation method for semiconductor alloys / O V Elyukhina
Exciton formation inhibition in GaInAs/InP Fe doped quantum wells / M Guezo ; S Loualiche ; J Even ; A Le Corre ; H Folliot ; C Labbe ; O Dehaese
Compositional dependence of electron traps in Ga(As,N) grown by molecular-beam epitaxy / P Krispin ; V Gambin ; J S Harris
The influence of the quantum lifetime on the width of the quantum Hall plateaus / L Gottwaldt ; K Pierz ; F J Ahlers ; L Schweitzer ; E O Gobel ; W Stolz
Intersubband transitions in strain compensated InGaAs/AlAs quantum well structures grown on InP / N Georgiev ; M Semtsiv ; T Dekorsy ; F Eichhorn ; A Bauer ; M Helm
Interfacial and piezoelectric properties of highly strained InGaAs/GaAs quantum well structures grown on (111)A GaAs substrates by MOVPE / J Kim ; S Cho ; A Sanz-Hervas ; A Majerfeld ; G Patriarche ; B W Kim
Quantum-Wires and -Dots / Section 3：
Carrier dynamics in self-organized In(Ga)As/Ga(Al)As quantum dots and their application to long-wavelength sources and detectors / P Bhattacharya ; A D Stiff-Roberts ; S Chakrabarti ; S Krishna ; C Fischer ; T Norris ; J Urayama
Single-electron transistors / P Hadley ; G Lientschnig ; M-J Lai
Selective formation of high-density and high-uniformity InAs/GaAs quantum dots for ultra-small and ultra-fast all-optical switches / Y Nakamura ; H Nakamura ; S Ohkouchi ; N Ikeda ; Y Sugimoto ; K Asakawa
Mechanical interaction in near-field spectroscopy of single semiconductor quantum dots / A M Mintairov ; P A Blagnov ; O V Kovalenkov ; C Li ; J L Merz ; S Oktyabrsky ; V Tokranov ; A S Vlasov ; D A Vinokurov
Magnetic properties of (Ga,Mn)N grown directly on 4H-SiC(0001) by molecular-beam epitaxy / S Dhar ; A Trampert ; K J Friedland
Selective MBE growth of GaAs ridge quantum wire arrays on patterned (001) substrates and its growth mechanism / T Sato ; I Tamai
Large transition energy separation at 1.31 [mu]m emission from InAs/GaAs quantum dots / Y Q Wei ; S M Wang ; F Ferdos ; Q X Zhao ; J Vukusic ; M Sadeghi ; A Larsson
Optical spectra of quantum dot aggregates in sub-wetting layer region / K Kral ; P Zdenek
Self-organized growth of InAs quantum dots and reduction of dot density by in-situ annealing / Y Matsuzaki ; T Kobuse ; R Ohashi ; M Konagai ; A Yamada
Narrow size-dispersion CdSe quantum dots grown on ZnSe by modified MEE technique / I V Sedova ; S V Sorokin ; A A Sitnikova ; O V Nekrutkina ; A A Reznitsky ; S V Ivanov
Spectroscopy of high-density assemblage of InAs/GaAs quantum dots / J W Tomm ; Y I Mazur
Properties of InGaAs coupled quantum wire structures grown on vicinal (111)B GaAs with quasi-periodic corrugation / T Noda ; N Kondo ; Y Akiyama ; T Kawazu ; H Sakaki
One-dimensional free exciton in CdTe/Cd[subscript 0.74]Mg[subscript 0.26]Te quantum wires / S Nagahara ; T Kita ; O Wada ; L Marsal ; H Mariette
Analysis of self-assembled GaN nanorods on Si(111) substrate / L W Tu ; C L Hsiao ; T W Chi ; J F Wu ; I Lo ; K Y Hsieh ; T T Sheng ; C F Hu
Electroluminescence of asymmetric coupled GaAs/AlGaAs V-groove quantum wires / F Karlsson ; H Weman ; M-A Dupertuis ; K Leifer ; A Rudra ; E Kapon
Effects of nitrogen incorporation in In(Ga)As/GaAs quantum dots / K Park ; W G Jeong ; J Jang ; Y D Jang ; N J Kim ; D Lee
Photoconductivity of GaAs/AlGaAs quantum wires measured along the wires direction / V Donchev ; M Saraydarov ; K Germanova ; X-L Wang ; S-J Kim ; M Ogura
Electronic Devices / Section 4：
GaAs HBTs with reduced collector capacitance for high-speed ICs and microwave power applications / K Mochizuki
InP/GaAsSb/InP heterojunction bipolar transistors / C Bolognesi ; M W Dvorak ; S P Watkins
Industrial aspects of III/V electronics: GaAs IC manufacturing in Taiwan for wireless communications / P C Chao
Silicon germanium technologies for high-speed digital and analog applications / H Knapp ; J Bock ; M Wurzer ; K Aufinger ; T F Meister
AlGaN/GaN HEMTs grown by molecular beam epitaxy on sapphire, 6H-SiC, and HVPE-GaN templates / N G Weimann ; M J Manfra ; J W P Hsu ; K Baldwin ; L N Pfeiffer ; K W West ; S N G Chu ; D V Lang ; R J Molnar
High power AlGaN/GaN HEMT's / L F Eastman ; V Tilak ; R Thompson ; B Green ; V Kaper ; T Prunty ; R Shealy ; J Smart ; H Kim
High breakdown electric field for Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors / T Makimoto ; K Kumakura ; N Kobayashi
Multiwafer epitaxy of GaN/AlGaN heterostructures for power applications / K Kohler ; S Muller ; N Rollbuhler ; R Kiefer ; R Quay ; G Weimann
Fabrication and electrical performance of oscillators in GaInP/GaAs-HBT MMIC technology up to 40 GHz / J Hilsenbeck ; F Brunner ; F Lenk ; J Wurfl
Experimental demonstration of a resonant tunneling delta-sigma modulator for high-speed, high-resoluton analog-to-digital converter / Y Yokoyama ; Y Ohno ; S Kishimoto ; K Maezawa ; T Mizutani
InAs/AlGaSb heterostructure displacement sensors / H Yamaguchi ; S Miyashita ; Y Hirayama
Charge balanced Ga[subscript 2]O-GaAs interface and application to self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor / M Passlack ; J K Abrokwah ; S I Yi ; M Hale ; J Sexton ; A C Kummel|p251
Investigation of quantum transport phenomena in resonant tunneling structures by simulations with a novel quantum hydrodynamic transport model / J Hontschell ; W Klix ; R Stenzel
Correlation between channel temperature and negative resistance in AlGaN/GaN HEMTs / N Shigekawa ; K Shiojima
Effect of temperature on the avalanche properties of sub-micron structures / C N Harrison ; J P R David ; C Groves ; M Hopkinson ; G J Rees
In[subscript 0.53]Ga[subscript 0.47]As ionization coefficients deduced from photomultiplication measurements / J S Ng ; M C Yee ; P A Houston ; G Hill
InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor / H M Chuang ; K H Yu ; K W Lin ; C C Cheng ; J Y Chen ; W C Liu
70-nm-gate PHEMT fabricated by a trilayer process of ZEP/P(MMA-MAA)/PMMA resist / S C Kim ; B O Lim ; H S Lee ; S K Kim ; H C Park ; D-H Shin ; J K Rhee
Studies on the low-k BCB passivation of 0.1[mu]m gamma gate PHEMTs / W-S Sul ; H-J Han ; S-D Lee ; J-K Rhee
Design of low loss transmission lines on GaAs substrates using the surface micromachining methods / Y-H Chun ; S-C Kim ; B-O Lim ; H-S Lee ; M-K Lee ; H-S Kim ; S-K Kim ; H-C Park ; S-W Yun
Correlation of pulsed IV measurements and high power performance of AlGaN/GaN HEMTs / J R Shealy ; L Eastman
120 nm gate length e-beam and nanoimprint T-gate GaAs pHEMTs utilising non-annealed ohmic contacts / E Boyd ; D Moran ; H McLelland ; K Elgaid ; Y Chen ; D Macintyre ; S Thoms ; C Stanley ; I Thayne
New composite-emitter HBTs with reduced turn-on voltage and small offset voltage / M K Tsai ; Y W Wu ; S W Tan ; Y J Yang ; W S Lour
Properties of electronic states at free surfaces and Schottky barrier interfaces of AlGaN/GaN heterostructure / T Inagaki ; S Ootomo ; T Hashizume
Direct S-parameter extraction by physical two-dimensional device AC-simulation / V Palankovski ; S Wagner ; T Grasser ; R Schultheis ; S Selberherr
Optoelectronic Devices / Section 5：
High-power blue-violet lasers grown on 3-inch sapphire and GaN substrate / S Uchida ; S Ikeda ; T Mizuno ; S Goto ; T Sasaki ; Y Ohfuji ; T Fujimoto ; O Matsumoto ; K Oikawa ; M Takeya ; Y Yabuki ; M Ikeda
III/V nitride LEDs and lasers / B Hahn ; D Eisert ; J Baur ; M Fehrer ; S Kaiser ; H-J Lugauer ; U Strauss ; A Lell ; V Harle
Recent advances in continuous wave quantum cascade lasers / D Hofstetter ; M Beck ; S Blaser ; T Aellen ; J Faist ; U Oesterle ; M Ilegems ; E Gini ; H Melchior
Edge- and surface-emitting photonic-crystal distributed-feedback lasers / I Vurgaftman ; W W Bewley ; C L Canedy ; J R Lindle ; C S Kim ; J R Meyer
Quantum well infrared photodetectors and thermal imaging cameras / H Schneider ; R Rehm ; J Fleissner ; M Walther ; P Koidl ; J Ziegler ; R Breiter ; W Cabanski
Temperature sensitivity of high power GaSb based 2[mu]m diode lasers / M Rattunde ; C Mermelstein ; J Schmitz ; W Pletschen ; J Wagner
Long-wavelength, two-dimensional, WDM vertical-cavity surface-emitting laser arrays fabricated by nonplanar wafer bonding / J Geske ; Y L Okuno ; J E Bowers ; D Leonard
High gain, low noise 4H-SiC UV avalanche photodiodes / B K Ng ; R C Tozer ; F Yan ; C Qin ; J H Zhao
Novel microcavity light emitting diodes / R P Stanley ; P Royo ; R Joray
High extraction efficiency AlGaInP microcavity light emitting diodes at 650 nm with AlGaAs-AlO[subscript x] DBR / J Dorsaz ; M Rattier ; C Karnutsch ; K Streubel
Orientation-mismatched wafer bonding for polarization control of 1.3 [mu]m wavelength vertical cavity surface emitting lasers (VCSEL) / Y-J Chiu ; S P DenBaars
Population inversion enhancement by resonant magnetic confinement in THz quantum cascade lasers / G Scalari ; L Ajili ; M Rochat ; H Willenberg ; H Beere ; G Davies ; E Linfield ; D Ritchie
Interferometric temperature mapping of GaAs-based quantum cascade laser / C Pflugl ; M Litzenberger ; W Schrenk ; S Anders ; D Pogany ; E Gornik ; G Strasser
Sensitivity of intersubband absorption linewidth and transport mobility to interface roughness scattering in GaAs quantum wells / T Unuma ; M Yoshita ; M Baba ; H Akiyama
Improved temperature performance of GaAs/AlGaAs quantum cascade lasers / C Becker ; C Sirtori
Electron-phonon strong coupling in intersubband resonators / G Biasiol ; L Sorba ; D Dini ; R Kohler ; A Tredicucci ; F Beltram
Demonstration of 640x512 pixel four-band quantum well infrared photodetector (QWIP) focal plane array / S D Gunapala ; S V Bandara ; J K Liu ; S B Rafol ; M Jhabvala ; K K Choi
Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb multiple quantum wells induced by interface chemical bonds / Y F Chen ; Y S Chiu ; M H Ya ; T T Chen
Efficient nitride-based short-wavelength emitters with enhanced hole injection / J M Zavada ; S M Komirenko ; K W Kim ; V A Kochelap
Study of polarization switch in a three-contacts vertical-cavity surface-emitting laser / V Badilita ; J-F Carlin ; M Brunner ; G Verschaffelt ; K Panajotov
Analysis of dynamics and intensity noise of semiconductor lasers under strong optical feedback / S Abdulrhmann ; M Ahmed ; T Okamoto ; W Ishimori
High performance optically pumped 1.55 [mu]m VCSELs for novel telecom applications / A Syrbu ; G Suruceanu ; V Iakovlev ; A Mereuta ; C-A Berseth ; A Mircea ; C Bungarzeanu
GaN-based single mirror light emitting diodes / Ch Zellweger ; J F Carlin ; H J Buhlmann
Nonlinear semiconductor materials for a fully passive low-loss optical combiner / G Zhao ; J J G M van der Tol
Optically pumped vertical external cavity semiconductor thin-disk laser with CW operation at 660 nm / M I Muller ; J Luft ; W Schmid ; N Linder ; S-S Beyertt ; U Brauch ; A Giesen ; G H Dohler
Polarization-sensitive photo-detectors based on strained M-plane GaN / S Ghosh ; P Misra ; H T Grahn
Investigation of the modulation efficiency of depleted InGaAsP/InP ridge waveguide phase modulators at 1.55 [mu]m / H S Park ; J C Yi ; Y T Byun
Continuous wave operation of far-infrared quantum cascade lasers
Resonant phonon-assisted depopulation in type-I and type-II intersubband laser heterostructures / M V Kisin ; M A Stroscio ; G Belenky ; S Luryi
Mid-infrared quantum cascade lasers operation above room temperature / Q Yang ; C Mann ; F Fuchs
Scattering transport and electron temperature evaluation in terahertz GaAs/AlGaAs quantum cascade laser / D Indjin ; P Harrison ; R W Kelsall ; Z Ikonic
Graded interface 9.3 [mu]m quantum cascade lasers
Lasing properties of GaAs/(Al,Ga)As quantum cascade lasers as a function of injector doping density / M Giehler ; R Hey ; H Kostial ; T Ohtsuka ; L Schrottke
Author Index
International Symposium on Compound Semiconductors (ISCS) Heinrich Welker Award
Algebraic models and quantum deformations in molecular thermodynamics / M N Angelova
The Bilbao Crystallographic Server / E Kroumova ; C Capillas ; M I Aroyo ; J M Perez-Mato ; S Ivantchev ; G Madariaga ; A Kirov ; H Wondratschek ; H T Stokes ; D M Hatch
Quantum algebraic symmetries in atomic nuclei and metal clusters / D Bonatsos ; B A Kotsos ; P P Raychev ; P A Terziev
Broken symmetry and symmetry classification of magnetic ordering in doped crystals / B R Gadjiev
Duality and conformal twisted boundaries in the Ising model
Quantum Frenkel-Kontorova model / C-L Ho ; C-I Chou
Geometric mechanics for applications in diatomic and triatomic molecular dynamics / F J Lin
Regular fractal structure of the energy matrix in 1D Heisenberg open spin-1/2 chains / F Pan ; L-R Dai ; D Zhang
New applications of the group theory in the kinetic theory of gases / V L Saveliev
Ladder operators for integrable one-dimensional lattice models / M C Takizawa ; J R Links
Macroscopic properties of A-statistics and A-superstatistics / T D Palev ; J Van der Jeugt
Admissible partitions and the square of the Vandermonde determinant / B G Wybourne
Noncommutative Geometry / Section 6：
Yang-Mills and Born-Infeld actions on finite group spaces / P Aschieri ; L Castellani ; A P Isaev
Noncommutative geometry on the algebra U(su[subscript 2]) and quantization of coadjoint orbits / E Batista ; S Majid
Quantum de Rham complex with d[superscript 3] = 0 differential on GL[subscript p,q](2) / N Bazunova
Realization of q-deformed spacetime as star product by a Drinfeld twist / C Blohmann
Equivariant noncommutative index on braided orbits / D Gurevich ; P Saponov
Noncommutative planar particles: higher order versus first order formalism and supersymmetrization / P Stichel ; W J Zakrzewski
A locally trivial quantum Hopf bundle / R Matthes
Z[subscript n]-graded topological generalizations of supersymmetry and orthofermion algebra / A Mostafazadeh
Homogeneous algebras, parastatistics and combinatorics / T Popov
Lie algebras of order F and extensions of the Poincare algebra / M Rausch de Traubenberg
Noncommutative differential geometric method to fractal geometry / J Lawrynowicz ; O Suzuki
Non-commutative standard model / X Calmet ; B Jurco ; P Schupp ; J Wess ; M Wohlgenannt
Methods and Applications of Quantum Theory / Section 7：
65th Birthday Tribute to Allan Solomon
Dissipative 'groups' and the Bloch ball / A I Solomon ; S G Schirmer
Gauging quantum-mechanical space-time symmetry / V Aldaya ; J L Jaramillo ; J Guerrero
Quantum XOR operation using macroscopic polarization states of light in Mach-Zehnder interferometer / A Y Leksin ; A P Alodjants ; A V Prokhorov ; S M Arakelian
Semigroup techniques for the efficient classical simulation of optical quantum information / S D Bartlett
Groups and semigroups in scattering theory--Poincare transformations and decaying states / A Bohm ; H Kaldass ; S Wickramasekara
Quantum ground-mode computation with static gates / G Castagnoli ; D R Finkelstein
Complex coherent states and non equilibrium quantum thermodynamics / E Celeghini
Deformation quantization of damped systems / D Chruscinski
Coherent state realizations of su(n + 1) in terms of subgroup functions / H de Guise ; M Bertola
Metric formulation of Galilean invariance in five dimensions / M de Montigny ; F C Khanna ; A E Santana
Nonperturbative approach to potentials in impenetrable boxes based on quasi-exact solvability / A de Souza Dutra ; V G C S dos Santos ; A M Stuchi
Critical temperature for entanglement transition in Heisenberg Models / H Fu ; X Wang
Nonlinear extension of quantum mechanics: remarks and recent results / H-D Doebner
Quantization of the linearized Kepler problem / J M Perez
Alternative Hamiltonians and Wigner quantization / A Horzela
Spectral properties of Landau operator with [delta] cylinder interaction / M N Hounkonnou ; G Honnouvo
The Jaynes-Cummings model and raising and lowering operators / V Hussin ; L M Nieto
Differential form of the star product for SU(2) Stratonovich-Weyl symbols / A B Klimov ; P Espinoza
On the combined effect of different symmetries on quantum mechanical potentials / G Levai
The application of Lie algebras to the separation of degrees of freedom in problems with many degrees of freedom
Multivariable Hermite polynomials, nonlinear coherent states and photon distributions / O V Man'ko
Hidden SL(2,R) symmetry for time-dependent Schrodinger equations / S Okubo
The particle-operator and particle states in quantum field theory / M Omote ; S Kamefuchi
Combinatorics of boson normal ordering: the Dobinski formula revisited / K A Penson
Non-Hermitian Hamiltonians with real and complex eigenvalues: An sl(2,C) approach / B Bagchi ; C Quesne
The stationary Maxwell-Dirac equations / C Radford
Confined systems through variational supersymmetric quantum mechanics / E Drigo Filho ; R M Ricotta
Quantum version of Hamilton-Jacobi theory for time-dependent systems / S Sakoda
Heun equation and Inozemtsev models / K Takemura
Group-theoretical and algebraic aspects of Bose-Einstein condensation of interacting particles in traps / O K Vorov ; M S Hussein ; P Van Isacker
Quantum coding with systems with finite Hilbert space / A Vourdas
A note on the optimal teleportation / W-L Yang
Generalized relativistic dynamics as a dynamics of third order / R M Yamaleev
Reorganization of energy bands in quantum finite particle systems / B I Zhilinskii
PT symmetry and supersymmetry / M Znojil
Algebras, Groups and their Representations / Section 8：
New infinite-dimensional Lie algebras of U (N[subscript +], N[subscript -])-tensor operators and applications / M Calixto
Invariants of Lie algebras having a frobeniusian structure / R Campoamor-Stursberg
Quantization on compact groups / G Chadzitaskos ; J Tolar
Special functions, raising and lowering operators / N Cotfas
All positive energy UIRs of D=6 conformal supersymmetry / V K Dobrev
Supersymmetry and special functions / A M Frydryszak
Quantization of phases and moduli in terms of the group SO[superscript up arrow] (1, 2) / H A Kastrup
p-Mechanical brackets and method of orbits / V V Kisil
The Kahler form on the loop group and the Radul cocycle on pseudo-differential operators / J-P Magnot
Cohomology and Bessel functions theory / M Mekhfi
Representations of classical Lie algebras from their quantum deformations / P Moylan
On the symmetries of the 16 Genetic Code-Doublets / T Negadi
A group theoretical approach to quantum theories on commutative and non-commutative spheres / K Odaka
Milne phase for the Coulomb quantum problem related to Riemann's hypothesis / H C Rosu ; J M Moran-Mirabal ; M Planat
Hierarchy of gradings on sl(3, C) and summary of fine gradings on sl(4, C) / M Svobodova
Quadratic algebras in simple exclusion models / R Twarock
Finite su(2)-oscillator; applications to signal processing / L E Vicent
Nonlinear Systems and their Symmetries / Section 9：
Infinite-dimensional Lie groups of symmetries of the ideal MHD equilibrium equations / O I Bogoyavlenskij
Lie symmetries of nonlinear reaction-diffusion systems with variable diffusivities / R Cherniha ; J R King
On geometric aspects of Weierstrass representations associated with CP[superscript N] harmonic maps / A M Grundland
Integrability and exact solution of an electronic model with long range interactions / K E Hibberd
Conservation laws for fractional differential equations / M Klimek
A new powerful method for solving non-linear differential equations: Burgers' equation as an example / S Otarod
On infinite symmetries and essential conservation laws for Navier-Stokes equations / V Rosenhaus
Green's function for dissipative quantum systems and its relation to nonlinear evolution equations / D Schuch
On the role of weak transversality in Lie group theory / P Tempesta
Mini-Symposium: Quantum Group Theory and Integrable Systems Invited Talks
q-Painleve systems arising from a q-difference analogue of the KP hierarchy / M Noumi
On constructions of Fock Space / A Ram
Representations of quantum groups: constructions and characters from a Hopf algebraic point of view / M Rosso
On examples of locally compact quantum groups / L Vainerman
Haar weight on some quantum groups / S L Woronowicz
Mini-Symposium: Quantum Group Theory and Integrable Systems Contributions
RTT presentation of ortho-symplectic super Yangians. Quasi-Hopf deformation / D Arnaudon ; J Avan ; N Crampe ; L Frappat ; E Ragoucy
Integrable models with comodule algebra symmetry / A Ballesteros ; F Musso ; O Ragnisco
Topological invariants of three-manifolds from U[subscript q](osp(1[vertical bar]2n)) / S C Blumen
Quantum groups and interacting quantum fields / C Brouder
Dirac monopoles from the Matsumoto non-commutative spheres / T Brzezinski ; A Sitarz
Q-Boson realization of the quantum algebras / C Burdik ; O Navratil
Dynamical systems associated to bicrossproducts / O Arratia ; M A del Olmo
Combinatorics of the q-shuffle product and the quon Weyl algebra / G Duchamp ; C Tollu ; F Toumazet
Decoupling of tensor factors in cross product and braided tensor product algebras / G Fiore
Differential calculus on quantum spaces / U Hermisson
On generalized Freudenthal-Kantor triple systems and Yang-Baxter equations / N Kamiya
The Jordanian bicovariant differential calculus / L Mesref
Differential calculus on a novel cross-product quantum algebra / D Parashar
q-deformations of classical (and quantum) integrable systems associated with coalgebras
Sum rules for codon usage frequencies / A Sciarrino ; P Sorba
About rational-trigonometric deformation / V N Tolstoy
Satellite Colloquium: Coherent States, Wavelets and Signal Processing
Coherent states, wavelets and applications
Coherent States and Phase Space Methods / Part A：
Symplectic geometry of the Wigner transform on noncompact symmetric spaces
Wavelet transform and [star] exponential / M Cahen ; S Gutt
Phase space techniques for the study of generalized Anti-Wick operators / E Cordero
Admissible vectors and traces on the commuting algebra / H Fuhr
Localization of frames / K Grochenig
Lattices of coherent states and square integrability / A L Hohoueto ; T Kengatharam ; J-P Antoine
Unified view of tomographic and other transforms in signal analysis / M A Man'ko
Wavelets and their Applications / Part B：
Wavelet based regularization for Euclidean field theory / M V Altaisky
Measuring a curvature radius with directional wavelets / L Jacques
Extracting structural and dynamical informations from wavelet-based analysis of DNA sequences / A Arneodo ; B Audit ; C Vaillant ; Y d'Aubenton-Carafa ; C Thermes
Deficient splines wavelets / F Bastin ; P Laubin
A general recurrence relation between the moments of a scaling function / S Nicolay
Atom modulus quantization for matching pursuits / C De Vleeschouwer
Multiscale observations of the solar atmosphere / J-F Hochedez ; S Gissot ; J Jacques
Wavelet transform associated to a homogeneous Siegel domain / H Ishi
Modeling 2D+1 textures / G Menegaz ; S Valaeys
An application of space-adaptive lifting: Image retrieval / P J Oonincx
Hybrid audio models and transform coding / B Torresani
A wavelet-based model for forecasting non-stationary processes / S Van Bellegem ; P Fryzlewicz ; R von Sachs
Louvain-la-Neuve Satellite Workshop List of participants
MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section ; with technical co-sponsorship from IEEE Electron Device Society
organised by the Industry Division of the Institution of Electrical Engieers ; in association with British Medical Informatics Society, Insitute of Physics, AIME
出版情報:
London : Institution of Electrical Engineers, c2000 xii, 332 p. ; 300 cm
International Symposium on Compound Semiconductors (ISCS) Heinrich Welker Award
Quantum Devices Award
Young Scientist Award
Preface
Sponsors
Symposium Committees
Acknowledgements
Electronic Devices / Chapter 1：
Progress in nitride-based microwave HEMTs / L F Eastman ; V Tilak ; J Smart ; B Green ; A Vertiatchikh ; N Weimann ; O Ambacher ; E Chumbes ; H Kim ; T Prunty ; J H Hwang ; W J Schaff ; B K Ridley ; J R Shealy ; V Kaper
Status of AlGaN/GaN HEMTs for microwave and power switching applications / U K Mishra ; N-Q Zhang ; Y-F Wu
High speed InP-based heterojunction bipolar transistors / M Rodwell ; M Urteaga ; S Lee ; D Scott ; Y-M Kim ; M Dahlstrom ; Y Wei ; T Mathew ; S Long ; A Gossard
High performance recessed gate AlGaN/GaN HEMTs / J S Moon ; W-S Wong ; M Micovic ; M Hu ; J Duvall ; M Antcliffe ; T Hussain ; P Hashimoto ; L McCray
Npn InGaN/GaN double heterojunction bipolar transistors with high common-emitter current gains / T Makimoto ; K Kumakura ; N Kobayashi
High field-emission current density from heavily Si-doped AlN and Al[subscript x]Ga[subscript 1 - x]N / M Kasu
Emitter capacitance cancellation in ultrahigh-speed InP/GaAsSb/InP DHBTs with a staggerred ("type II") band lineup / C R Bolognesi ; M W Dvorak ; S P Watkins ; T W MacElwee
Device technology for high-yield and high-performance InP/InGaAs DHBTs / K Kurishima ; M Ida ; N Watanabe ; T Enoki
A novel resonant tunneling logic gate capable of 100 fs/gate class operation / K Maezawa ; T Tanaka ; T Mizutani
High peak current density and low peak voltage strained In[subscript 0.9-0.8]Ga[subscript 0.1-0.2]As/AlAs RTD grown by metal organic chemical vapor deposition / H Matsuzaki ; J Osaka ; H Sugiyama ; T Kobayashi
DC, RF and stability properties of high current density InGaAs tunnel diodes / M R Deshpande ; S Ageno ; V Nair ; N El-Zein ; G Kramer ; M Kyler ; S Allen ; O Kuboi ; J Lewis ; H Goronkin
On the electrical characteristics of high energy carbon irradiated Au/n-GaAs Schottky barrier diodes / P Jayavel ; K Santhakumar ; M Ogura
Attractive potential around a buried metallic gate in a Schottky collector hot electron transistor / L-E Wernersson ; R Yamamoto ; Y Miyamoto ; E Lind ; I Pietzonka ; W Seifert ; L Samuelson ; K Furuya
Investigation of DLTS and low-frequency noise behaviour of In[subscript 0.49]Ga[subscript 0.51]P/In[subscript 0.22]Ga[subscript 0.78]As p-HEMT grown by using a compound source MBE / J-H Kim ; S-J Jo ; J-W Kim ; P-W Yu ; J-I Song
Sub 0.1 [mu]m asymmetric [Gamma]-gate PHEMT process using electron beam lithography / S C Kim ; B O Lim ; H S Kim ; S D Lee ; B H Lee ; W S Sul ; D-H Shin ; J K Rhee
0.12 [mu]m gate length In[subscript 0.52]Al[subscript 0.48]As/In[subscript 0.53]Ga[subscript 0.47]As HEMTs on transferred substrate / S Bollaert ; X Wallart ; S Lepilliet ; A Cappy ; E Jalaguier ; S Pocas ; B Aspar ; J Mateos
Two-dimensional electron gas transport properties in AlGaN/GaN heterostructure field-effect transistors with high Al compositions / N Maeda ; K Tsubaki ; T Saitoh
Low-frequency noise characteristics of AlGaN/GaN HEMT / H Makihara ; M Akita ; Y Ohno ; S Kishimoto
Electroluminescence in AlGaN/GaN HEMTs / T Nakao
A depletion-mode InP MOSFET with a liquid phase oxidized InGaAs gate / S-J Kang ; J-C Han ; H-J Song ; S-W Park
Characteristics of depletion-mode In[subscript 0.53]Ga[subscript 0.47]As MOSFETs
Depletion and accumulation mode operation of GaAs MISFETs with nm-thin gate insulating layers formed by UV & ozone process / Y Kita ; Y Ohta ; N C Paul ; K liyama ; S Takamiya
Image rejection mixer For WLAN application / W-C Wu ; H-H Lin
Multiband quantum transport with self-consistent scattering calculation based on Green's function method / M Ogawa ; K Okita ; T Miyoshi
Optical Devices / Chapter 2：
Blue and violet vertical cavity light emitters and multielement arrays / Y He ; I Ozden ; M Diagne ; H Zhou ; E Makarona ; A V Nurmikko ; J Han ; T Takeuchi ; M Krames
High efficiency multiple quantum well GaInNAs/GaNAs ridge-waveguide laser diode operating out to 1.4[mu]m / W Ha ; V Gambin ; M Wistey ; S Kim ; J Harris
Low-noise quantum well infrared photodetectors for high-resolution thermal imaging / H Schneider ; M Walther ; J Fleissner ; R Rehm ; E Diwo ; K Schwarz ; P Koidl ; G Weimann ; J Ziegler ; R Breiter ; W Cabanski
Super high output power of 4.2 W in AlGaInN-based blue-violet laser diode array / S Goto ; T Tojyo ; S Ansai ; Y Yabuki ; T Hino ; H Yamanaka ; Y Moriya ; Y Ito ; Y Hamaguchi ; S Uchida ; M Ikeda
Photonic quantum corral, carrier ordering, and photonic quantum dot/ring device / J Bae ; B H Park ; J Y Kim ; O'D Kwon
High efficiency AlGaInP/AlGaAs vertical-cavity surface-emitting lasers with 650 nm wavelength / A Knigge ; M Zorn ; H Wenzel ; M Weyers ; G Trankle
340 nm-band bright UV-LEDs using quaternary InAlGaN active region / H Hirayama ; A Kinoshita ; M Ainoya ; T Yamabi ; T Yamanaka ; A Hirata ; Y Aoyagi
1.4 [mu]m GaInNAs/GaAs quantum well laser grown by chemical beam epitaxy / Y Ikenaga ; T Miyamoto ; S Makino ; T Kageyama ; M Arai ; F Koyama ; K Iga
Single fundamental mode laser operation in microlensed vertical cavity surface emitting lasers / S M Hwang ; S H Nam ; S-H Park ; Y Park ; H Jeon ; J C Woo
Semiconductor Raman amplifiers for time gate demodulation in terabit optical communication system / T Tanabe ; K Suto ; T Saito ; T Kimura ; Y Oyama ; J Nishizawa
Generation of mid-infrared radiation in quantum well laser due to GaAs lattice nonlinearity / A A Afonenko ; V Ya Aleshkin ; N B Zvonkov
Room temperature self-excited electronic Raman scattering by intersubband transitions in compressively strained InGaAs quantum-well lasers / W Susaki ; H Yaku ; X Gao ; K Nishikawa
Characteristics of AlGaN quantum well light emitting diodes under large current operation / T Nishida
Orange GaInN/GaN multi-quantum-well light-emitting diodes using a post-annealing technique / H Ishikawa ; T Egawa ; T Jimbo
High-efficiency monochromatic and white InGaN flip-chip dice / J C Bhat ; A Kim ; D Collins ; R Fletcher ; R Khare ; S Rudaz
Magnetic Materials / Chapter 3：
MOVPE growth experiments and magnetic characterization of (GaMn) As layer structures / M Lampalzer ; K Volz ; W Treutmann ; S Nau ; T Torunski ; K Megges ; J Lorberth ; W Stolz
Growth and light-induced ferromagnetic properties of InMnAsSb/InSb heterostructure / Y K Zhou ; M Kanamura ; R Asano ; H Asahi
Tunneling-induced spin injection in Fe/GaAs and MnAs/GaAs heterostructures / K H Ploog ; M Ramsteiner ; H-P Schonherr ; H J Zhu
Structural and magnetic properties of ferromagnetic MnAs films on GaAs(001) / L Daweritz ; F Schippan ; M Kastner ; B Jenichen ; V M Kaganer ; B Dennis ; K-U Neumann ; K R A Ziebeck
Spin injection with Fe/InAs hybrid structure / H Ohno ; K Yoh ; Y Katano ; K Sueoka ; K Musaka
Novel Systems / Chapter 4：
UHV-CVD growth of Si[subscript 1 - x - y]Ge[subscript x]C[subscript y] for device applications / M Kubo ; Y Kanzawa ; T Takagi ; K Yuki ; K Toyoda ; K Nozawa ; A Asai ; Y Hara ; T Ohnishi
Vertical and lateral heterogeneous integration using direct wafer bonding / J Geske ; V Jayaraman ; Y L Okuno ; J E Bowers
Device characteristics of vertical field effect transistors with ultra-short InGaAs/GaAs channels / F Ertl ; R A Deutschmann ; D Schuh ; M Bichler ; G Abstreiter
Band anticrossing in highly mismatched compound semiconductor alloys / W Walukiewicz ; K M Yu ; J Wu ; J W Ager ; E E Haller ; I Miotkowski ; A K Ramdas ; C-H Su
Phase stability of CdO on zincblende layers grown on GaAs substrates by metalorganic molecular-beam epitaxy / A B M A Ashrafi ; I Suemune ; H Kumano ; Y W Ok ; T-Y Seong
Temporary and permanent wafer bonding for reliable backside processing of compound semiconductor wafers / V Dragoi ; T Glinsner ; P Lindner ; C Schaefer ; T Kazuta ; D Hornik ; M Reiche
Three-dimensional structuring using self-rolling of strained InGaAs/GaAs films / V Ya Prinz ; A B Vorob'ev ; V A Seleznev
Selective MBE growth of GaAs/AlGaAs nanowires on patterned GaAs (001) substrates and its application to hexagonal nanowire network formation / T Sato ; I Tamai ; C Jiang ; H Hasegawa
A novel surface patterning using FIB and in-situ etching / Y Asaoka ; T Arai ; N Sano ; T Kaneko
Novel fabrication method of semiconductor nano-electromechanical structures using controlled surface step distribution / H Yamaguchi ; Y Hirayama
Quantum Transport / Chapter 5：
Transport properties in back-gated InAs/GaSb heterostructures / K Suzuki ; S Miyashita
Conductance fluctuations in quantum wires formed at spin-splitting narrow gap heterojunctions / S Yamada ; Y Sato ; T Kita ; S Gozu
Magneto-transport properties of electrons in quantum wells with quasi-periodic interface corrugation / T Noda ; H Sakaki
Numerically evaluated exact properties of the conductance of regular and chaotic quantum cavities / Y Takagaki
A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes / M Suhara ; S Ooki ; T Okumura
A quasi-1-dimensional electron wave interference transistor with recess-etched grating structure fabricated by electron beam lithography / T Murata ; S Mizuno
Scattering processes of 2D electrons by charged quantum dots in n-AlGaAs/GaAs heterojunction channels with 10nm-scale embedded InGaAs islands / T Kawazu
Negative differential conductance of In[subscript 0.4]Ga[subscript 0.6]As/GaAs(311)B laterally coupled quantum dots / H-Z Song ; Y Okada ; K Akahane ; H Z Xu ; M Kawabe
Optical Characterization / Chapter 6：
Nano seismology: acoutsic shock wave generation and terahertz emission from InGaN/GaN structures / J Y Sohn ; J S Yahng ; D J Park ; D S Kim ; E Oh ; G D Sanders ; C J Stanton
Time-resolved THz spectroscopy of miniband transport in biased GaAs/AlGaAs superlattices / Y Shimada ; K Hirakawa
Ultrafast and large nonlinear optical response due to spatial structure of internal electric field in semiconductor thin film / T Isu ; K Akiyama ; N Tomita ; T Nishimura ; Y Nomura ; H Ishihara ; K Cho
Modulation of PL recombination processes in N doped GaAs/Al[subscript 0.33]Ga[subscript 0.67]As SQW by electric field / K Onomitsu ; A Kawaharazuka ; T Okabe ; H Saito ; Y Horikoshi
Localized and resonant states of shallow acceptors in Ge/Ge[subscript 1 - x]Si[subscript x] multiple-quantum well heterostructures / B A Andreev ; V I Gavrilenko ; I V Erofeeva ; D V Kozlov ; O A Kuznetsov
Effect of iodine doping on photoluminescence properties of ZnTe grown by metalorganic vapor phase epitaxy / K Hayashida ; M Nishio ; S Wang ; Y Chang ; Q Guo ; H Ogawa
Femto-second pump-probe study of the nonlinear transmission in an asymmetric triple quantum well structure / K Mizutani ; M Yamaguchi ; N Sawaki
Spatiotemporal imaging of nonequilibrium current during impact ionization avalanche in n-GaAs / K Aoki
Description of eigen energy in deep quantum wells by narrow-gap band theory: InGaAs/InAlAs and InGaAs/AlAsSb system under Landau quantization / N Kotera ; K Shibata ; T Kawano ; T Sakai ; T Ikaida ; N Miura ; N Georgiev ; T Mozume
Ionic screening effects on resonant light scattering by intersubband excitations in n-type AlGaAs/GaAs heterojunctions / S M Maung ; S Katayama ; M Koyano
Determination of the critical layer thickness of GaAs/InGaAs strained quantum wells by scanning near-field optical spectroscopy / Y Ohizumi ; T Tsuruoka ; S Ushioda
Persistent photoconductivity under atmospheric pressure in uniformly doped n-GaAs prepared by intermittent injection of TMG and AsH[subscript 3] / F Matsumoto ; H Watanabe
Self-consistent computer analysis of cathodoluminescence in-depth spectra for compound semiconductor heterostructures / F Ishikawa
Ultra fine analysis of linear response of confined excitons in GaAs nano-layers / K Yoshimoto
Anomalous temperature dependence of the photoluminescence properties in GaAs triple quantum wells with growth islands / A Satake ; K Hayata ; N Shiraishi ; K Fujiwara ; L Schrottke ; R Hey ; H T Grahn
Optical studies of surface quantum well structures with intermediate-layer thicknesses / M Sakai ; J Hagino ; H Tsuruta
Quantum Nanostructures / Chapter 7：
Quantum dots: lasers and amplifiers / D Bimberg
Single optical mode coupling of single quantum dot spontaneous emission / G S Solomon ; M Pelton ; Y Yamamoto
Single photon emission from few particle states in InAs quantum dots / R M Thompson ; R M Stevenson ; A J Shields ; I Farrer ; C J Lobo ; D A Ritchie ; M L Leadbeater ; M Pepper
Anti-Stokes photoluminescence and phonon broadening in self-assembled InAs/GaAs quantum dots / C Kammerer ; G Cassabois ; C Voisin ; C Delalande ; Ph Roussignol ; J-M Gerard
Anomalous quantum confined Stark effects in vertically coupled InAs/GaAs self-assembled quantum dots / W Sheng ; J-P Leburton
Biexciton formation in CdTe/Cd[subscript 0.74]Mg[subscript 0.26]Te quantum wires / S Nagahara ; O Wada ; L Marsal ; H Mariette
Stranski-Krastanov growth of (In,Ga)As quantum dots by controlling the wetting layer / M Nakahama ; K Yamashita
Size ordering effects of InAs quantum dots during a GaAs capping growth / Y Saito ; R Ohtsubo ; K Yamaguchi
Luminescence properties of InAs dots grown by molecular beam epitaxy on metamorphic In[subscript x]Al[subscript 1 - x]As (0.33 [less than or equal] x [less than or equal] 0.52) buffer layers / D Vignaud ; Y Cordier ; P Miska ; D Ferre
Carrier dynamics in spatially ordered InAs quantum dots / S Marcinkevicius ; J Siegert ; R Leon ; S Chaparro ; S R Johnson ; C Navarro ; X Jin ; Y H Zhang
Electro-optical effects in single and multi-stacked dots / A Vasanelli ; R Ferreira ; R Cingolani ; G Bastard
Quantum-confined Stark effect in InGaN pyramidal dots induced by the piezoelectric field / Y Arakawa
Transport through InGaAs/GaAs(311)B quantum dots studied by conductive scanning probes / M Miyagi ; H Shigekawa
Low temperature conductance fluctuations in coupled open dot systems / Y Ochiai ; N Aoki ; D Oonishi ; Y Iwase ; K Ishibashi
Formation mechanism of ZnSe nanocrystals emitting whitish blue in water / N Murase ; M Gao ; T Yazawa ; J Feldmann
Strong band-edge emission from surface modified CdS quantum dots prepared by a colloidal method / D Kim ; N Teratani ; K Mizoguchi ; M Nakayama
Modulation dynamics of red-emitting quantum dot lasers / T Riedl ; J Porsche ; F Scholz ; A Hangleiter
Novel Si/Ge quantum dot mid-infrared photodetector structures with in-plane transport / D Bougeard ; K Brunner
Artificial nanostructure devices of InAs produced by AFM oxidation / S Sasa ; A Nakashima ; M Inoue
UV photoluminescence spectrum of GaN self-assembled quantum dots grown by MOCVD / M Miyamura ; K Tachibana
Material Growth and Characterization / Chapter 8：
P-type conductivity in Si doped Al[subscript x]Ga[subscript 1 - x]As for 0 [less than or equal] x [less than or equal] 1 grown by molecular beam epitaxy on GaAs(113)A surfaces / S Tibebu Kassa
Application of the GW method to the semiconducting materials / M Oshikiri ; F Aryasetiawan
Elastic properties and pressure-induced phase transitions of BNs / H Fujita ; K Shirai ; H K Yoshida
Annealing effect of TlInGaAs/InP DH and MQW structures / A Mizobata ; H J Lee ; O Maeda ; K Konishi
Effect of annealing on the optical parameters in pulsed laser deposited vanadium pentoxide thin films / R T Rajendra Kumar ; B Karunagaran ; D Mangalaraj ; Sa K Narayandass ; P Manoravi ; M Joseph
Molecular orbital study of electronic states by discrete variational X[alpha] method: influences of chalcogen atoms / Y Yamamura ; S Miyamura ; T Inokuma ; K Iiyama
Self-limiting growth of InP by intermittent injection of TMIn/TEIn and TBP in ultra high vacuum and its in-situ monitoring by reflectance anistropy spectroscopy (RAS) / N Otsuka
Real-time observation of step-flow limited metal organic vapor phase epitaxial growth of InP and their characteristics / S Bhunia ; T Kawamura ; Y Watanabe ; S Fujikawa ; K Uchida ; S Nozaki ; H Morisaki ; J Matsui ; Y Kagoshima ; Y Tsusaka
Study on mechanism of re-entrant RHEED oscillation observed during LT-MBE growth of GaAs / A Nagashima ; M Tazima ; J Yoshino
Silicon carbide delta-doped structures formed by "pulse doping" technique in the vertical hot wall type CVD system / K Takahashi ; T Yokogawa ; M Uchida ; O Kusumoto ; R Miyanaga ; M Kitabatake
Phosphorus and arsenic P-type doping of bulk ZnTe for LED application / S L Wang ; Q X Guo
Roles of the ZnO buffer layer to the properties of ZnO on Si substrates grown by metalorganic vapor phase epitaxy / S-W Kim ; K Ogata ; K Maejima ; S Fujita
Wide wavelength control of highly strained GaInAs/GaAs QWs on patterned substrate for multiwavelength VCSEL array / T Kondo ; N Nishiyama ; M Azuchi
Pseudo-three-dimensional photoelastic characterization of LEC-GaAs single crystal ingot / M Yamada ; T Chu
Optimization of GaAs/Si heteroepitaxy for solar cell application / J Takamori ; Y Shimizu ; T Ueda ; C Yamagishi
Material Growth and Characterization (Nitride) / Chapter 9：
Recent developments in selective area growth and epitaxial lateral overgrowth of III-nitrides / K Hiramatsu
Highly uniform characteristics of blue-violet lasers on a 3-inch o wafer / M Takeya ; T Asano ; S Ikeda ; S Kijima ; T Mizuno
Improvement in crystal quality of GaN films with quantum dots as buffer layers grown on sapphire substrates by molecular beam epitaxy / D Huang ; C W Litton ; M A Reshchikov ; F Yun ; T King ; A A Baski ; H Morkoc
Growth of high-quality GaN on metallic-ZrB[subscript 2] by metalorganic vapor phase epitaxy / Y Yukawa ; T Nakamura ; M Kosaki ; S Nitta ; S Kamiyama ; H Amano ; I Akasaki ; S Otani ; H Kinoshita
Characterization of GaNP grown by photo-assisted MOVPE / Y Itoh ; J Li ; H Ishii ; S Yoshida ; J Kikawa ; K Onabe ; Y Shiraki
Optically-biased photoconductivity spectrum measurements of cubic GaN/GaAs(001) heterostructures / R Katayama ; M Kobayakawa ; A Nagayama
4f configurations of Eu and Tb ions in GaN / T Maruyama ; H Bang ; S Morishima ; K Akimoto ; Y Nanishi
Photoluminescence from polycrystalline GaN grown by MBE on metal substrates / A V Andrianov ; K Yamada ; H Tampo ; V Yu Nekrasov ; Z N Rodionova ; I S Zhuravlev ; N N Zinonev
Structural analysis of GaN layers on GaAs (111)B substrates grown by MOVPE / S Sanorpim ; E Takuma ; H Ichinose
Structural study on stacking faults in GaN/GaAs (001) heterostructures / H Sawada
FEM deformation analysis of air-bridged lateral epitaxial grown GaN films / A Ishibashi
Identification of homogenous and inhomogenous structures of NH[subscript 3] GS-MBE-grown GaN epilayers by ion-channeling studies / S Kurai ; T Saimei ; M Konishi ; S Kubo ; T Taguchi
Growth condition dependence of InN film a-axis directions on sapphire (0001) substrate / T Yamaguchi ; T Araki ; N Teraguchi ; A Suzuki
Characterization of GaN/AlN films with different polarities grown by molecular beam epitaxy on sapphire substrates / P Visconti ; J Jasinski ; Z Liliental-Weber
Thick cubic GaN grown on GaAs by three-step growth / H Tanaka ; A Nakadaira
High-quality GaN growth on AlN/sapphire templates by MOVPE / M Umeno ; T Shibata ; K Asai ; S Sumiya ; Y Kuraoka ; M Tanaka ; O Oda
Fabrication of GaN/AlGaN MQW on (1-101) facet of wurtzite GaN grown on a (111)Si substrate by selective MOVPE / T Kato ; Y Honda
New buffer layer technique using underlying epitaxial AlN films for high-quality GaN growth / Y Kida ; H Miyake ; Y Hori ; T Nagai
The Monte Carlo simulation of epitaxial growth of GaN(0001) with wurtzite structure / A Ishii ; M Tsukao ; O Tomiyama ; T Aisaka
Doping characteristics and structural defects in N/Ge co-implanted GaN / Y Nakano ; T Kachi
High-quality and high-mobility AlInN/GaN superlattices grown by metalorganic vapor phase epitaxy / S Yamaguchi ; Y Iwamura ; S Mochizuki
Compositional and structural characterization of novel Al[subscript 1 - x]Si[subscript 1 - x]N ternary alloy / Y Taniyasu
MOVPE-growth and characterization of metastable (GaIn)(NAs)/GaAs heterostructures for 1.3 [mu]m lasers / A Ramakrishnan ; G Ebbinghaus
Evaluation of nanopipes in GaN films by localized avalanche breakdown / M Ohkubo
In-situ XPS and photoluminescence characterization of GaN surfaces grown by MBE on MOVPE GaN templates / S Anatathanasarn ; T Hashizume
Temperature dependence of photoluminescence intensity change due to below-gap excitation in GaN / N Kamata ; J M Zanardi Ocampo ; W Okamoto ; F Takahashi ; K Hoshino ; T Someya
Author Index
International Symposium on Compound Semiconductors (ISCS) Heinrich Welker Award
organised by Department of Electrical Engineering and Electronics, UMIST, Manchester, UK ; co-sponsored by IEEE UK& RI MTT/ED/AP/LEO Societies Joint Chapter Administratice Committee, IEEE UK, IoP
出版情報:
Piscataway, P.J. : IEEE Operation Center, c2002 322 p. ; 30 cm
図書
雑誌
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