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1.

図書

図書
editors, P.J. Hesketh ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 258 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-19
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Preface
Micromachining
The Microfactory System using Electrochemical Machining / Masayuki Suda ; Kazuyoshi Furuta ; Toshihiko Sakuhara ; Tatsuaki Ataka
Electroplated Nanocrystalline Nickel-Iron Alloys as a New Powerful Material for Microstructured Molding Tools / A. Fath ; W. Leskopf ; K. Bade ; W. Bacher
Lateral Etch Study of Thin Films Using Hydrofluroric Acid Chemistries for MEMS Devices / G. Matamis ; Chuan-Che Wang ; B. Gogoi
Low Surface Tension Etching Solutions for Silicon Dioxide Removal in Microelectromechanical Systems / M. J. Parent ; L. Zazzera ; P. Rajtar ; F. E. Behr
Hybrid Micromachining and Surface Microstructuring of Alumina Ceramic / P. Mardilovich ; D. Routkevitch ; A. Govyadinov
Microfluidics
Micro Scale Purification Systems for Biological Sample Preparation / A. B. Frazier
Challenges and Solutions for Packaging MEMS and Microsystems / J. Neysmith ; D. F. Baldwin
Fabrication and Characterization of Plastic Microfluidic Devices Modified with Polyelectrolyte Multilayers / L. E. Loscascio ; S. L. R. Barker ; D. Ross ; Jay Xu ; S. Roberson ; M. Tarlov ; M. Gaitan
Bulk-Etched Integrated Mesoscopic Fluidic Interconnects for Fluidic Microdevices / J. A. Scalf ; D. Liepmann ; A. P. Pisano
Electro-Magnetically Actuated Diverting Valve Using LTCC Tapes / J. R. Gillman ; P. Espinoza-Vallejos ; L. Sola-Laguna ; J. J. Santiago-Aviles
Design of a MEMS Magnetic Bi-Stable Valve / D. Creyts IV ; P. J. Hesketh ; G. C. Frye-Mason
Room Temperature, Adhesive Bonding for Wafer Scale Packaging of Fluidic Microsystems / X. Ma ; B. Gierhart ; S. D. Collins ; R. L. Smith
Physical Sensors
Inertial Sensors: The Drive for Aspect Ratio / P. L. Bergstrom
Residual Stress Effect and Improvement Method on the Performance of Diaphragm-Based Piezoelectric Microphones / Mengnian Niu ; Sok Kim
A Post-Processing Method for Suppressing the Residual Mechanical Stress in CMOS Layers, for MEMS Applications / B. Ghodsian ; V. Milanovic
Chemical Sensors
Chemical Microsensors for Aerospace Applications / G. W. Hunter ; P. G. Neudeck ; G. Fralick ; C. C. Liu ; Q. H. Wu ; M. S. Sawayda ; Z. Jin ; J. Hammond ; D. Makel ; W. A. Rauch ; M. Liu ; G. Hall
A MEMS Based Hybrid Preconcentrator/Chemiresistor Chemical Sensor / R. C. Hughes ; S. V. Patel ; R. P. Manginell
Micro-Hotplate, an Useful Concept for Gas Sensing, Fluidics and Space Applications / D. Briand ; O. Guenat ; B. van der Schoot ; T. Hirata ; N. F. de Rooij
Detection of Trace Silver and Copper at an Array of Boron-Doped Diamond Microdisk Electrodes / C. Madore ; A. Duret ; W. Haenni ; A. Perret
FET Based pH and Nitrate Checkers for Acid-Rain Monitoring / S. Wakida ; M. Yamane ; S. Takeda ; Z. Siroma ; Y. Tsujimura ; J. Liu
Biosensors
Microfabricated PMMA Structure for DNA Preconcentration and Electrophoresis / Yu-Cheng Lin ; Chien-Kai Tseng ; Shao-Qin Hou
Soluble Sensors of Telephonic Signals / M. Garnett ; J. L. Remo
Selective Deposition of Octasubstituted Phthalocyanine Materials Based on Hydrophobic / Hydrophilic Surface Interactions / R. A. P. Zangmeister ; N. R. Armstrong
Nanomechanical Detection of Biomolecular Interactions / K. M. Hansen ; Guanghua Wu ; Hai-Feng Ji ; T. Thundat ; R. Datar ; R. Cote ; A. Majumdar
Ultra-Sensative Resonant Frequency Based Mass Detector / B. Ilic ; D. Czaplewski ; H. G. Craighead ; P. Neuzi ; C. Campagnolo ; C. Batt
Microfabrication Processes
Developing a [mu]-Fabrication Course: A Study in Multidisciplinary MEMS Curriculum Development / R. S. Evans
Microstructures for Monitoring Wafer Uniformity of Reactive Ion Etching / R. Leung ; D. W. Howard
Water Dispersible Silanes for Wettability Modification of Polysilicon / A. M. Almanza-Workman ; S. Raghavan ; P. Deymier ; D. J. Monk ; R. Roop
Correlation of Metal Film Grain Size to Optical Measurement Results / T. Robinson ; C. Narayan ; J. Sledziewski ; G. Ready ; S. Alie
Preface
Micromachining
The Microfactory System using Electrochemical Machining / Masayuki Suda ; Kazuyoshi Furuta ; Toshihiko Sakuhara ; Tatsuaki Ataka
2.

図書

図書
editors, A.G. Baca, R.F. Kopf
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 214 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-18
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Preface
Symposium Organizers
State-of-the-art Program on Compound Semiconductors (XXXIII)
InP HBT and HEMT Technology and Applications / A. Gutierrez-Aitken ; A. K. Oki ; D. C. Streit ; R. Lai ; D. Sawdai ; Y. C. Chen ; E. Kaneshiro ; R. Grundbacher ; P. C. Grossman ; T. Block ; P. Chin ; M. Barsky ; M. Wojtowicz ; H. C. Yen
Reduced Area InGaAs/InP HBT Device Fabrication for High Speed Circuit Applications / R. F. Kopf ; N. G. Weimann ; R. A. Hamm ; R. W. Ryan ; A. Tate ; M. A. Melendes ; R. Melendes ; Q. Lee ; G. Georgiou ; Y. Baeyens ; Y-K. Chen
Non-Crystallographic Wet Etching of Gallium Arsenide / A. G. Baca ; J. R. Laroche ; P. C. Chang ; F. Ren
Chemical Etching Behavior of n-AlGaAs/p-AlGaAs Structures under Different Light Illumination Conditions / K. Shigyo ; Z. Kawazu
Progress in Mid-IR Type-II Interband Cascade Lasers / R. Q. Yang ; J. L. Bradshaw ; J. D. Bruno ; J. T. Pham ; D. E. Wortman
Development of III-Nitrides for Near-Infrared Optoelectronics using Intersubband Transitions / H. M. Ng ; C. Gmachl ; S. N. G. Chu ; A. Y. Cho
Visible Vertical Cavity Light Emitters for Fibre Optical Communication / M. Saarinen ; V. Vilokkinen ; P. Sipilo ; N. Xiang ; S. Orsila ; M. Guina ; P. Melanen ; M. Dumitrescu ; P. Uusimaa ; P. Savolainen ; M. Pessa
Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors / N. Y. Li ; E. Armour ; P. R. Sharps ; H. Q. Hou
Antimonide-Based Long-Wavelength Lasers on GaAs Substrates / J. F. Klem ; O. Blum
Novel MOS Schemes for Electronic Devices with Photoanodically Grown Oxides on GaN Surfaces / D. Mistele ; T. Rotter ; R. Ferretti ; H. Klausing ; F. Fedler ; O. K. Semchinova ; J. Stemmer ; J. Aderhold ; J. Graul
GaN Power Devices / S. J. Pearton ; A. P. Zhang ; G. Dang ; X. A. Cao ; K. P. Lee ; H. Cho ; B. P. Gila ; J. W. Johnson ; C. Monier ; C. R. Abernathy ; J. Han ; J.-I. Chyi ; C.-M. Lee ; T.-E. Nee ; C.-C. Chuo ; G. C. Chi
Fabrication of an Integrated Optics 1 to 2 Optical Switch / Y. Hernandez ; J.-P. Vilcot ; D. Decoster ; J. Chazelas
Optical Characterization of Acceptor Implantation in GaN / B. J. Skromme ; G. L. Martinez ; A. Suvkhanov ; L. Krasnobaev ; D. B. Poker
Cantilever Epitaxy: A Simple Lateral Growth Technique for Reducing Dislocation Densities in GaN and Other Nitrides / C. I. H. Ashby ; C. C. Willan ; N. A. Missert ; P. P. Provencio ; D. M. Follstaedt ; G. M. Peake ; L. Griego
The Formation Mechanism of SiC/Si Interface in the Growth of SiC Films on Si / K. S. Nahm ; K. C. Kim ; C. I. Park ; J. I. Roh
SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors / B. Luo ; J. I. Chyi ; T. E. Nee ; C. M. Lee ; C. C. Chuo ; T. J. Anderson
The Effect of N2 Plasma Damage on DC and RF Characteristics of HEMTs / V. P. Trivedi ; C. H. Hsu ; X. Cao ; C. S. Wu ; M. Hoppe ; J. Sasserath ; J. W. Lee
High Speed Devices for Wireless Applications II
III V Enhancement Mode Field Effect Transistor Technologies for Cellular Applications / J. Costa
Indium Phosphide HBT Device Parameter Extraction for Spice Modeling and Process Optimization / J.-M. Kuo ; M. Melendes ; Y. K. Chen
The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors
Fabrication and Materials Characterization of Pulsed Laser Deposited Nickel Silicide Ohmic Contacts to 4H n-SiC / M. W. Cole ; P. C. Joshi ; C. W. Hubbard ; E. Ngo ; J. D. Demaree ; J. K. Hirvonen ; M. Wood ; M. Ervin ; C. J. K. Richardson ; M. H. Wisnioski
Author Index
Subject Index
Preface
Symposium Organizers
State-of-the-art Program on Compound Semiconductors (XXXIII)
3.

図書

図書
editors C.L. Claeys ... [et al.] ; sponsored by the Electrochemical Society, Inc., Electronics Division
出版情報: Bellingham, Wash. : Published in cooperation with SPIE-the International Society for Optical Engineering , Pennington, N.J. : Electrochemical Society, c2000  xix, 696 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-17
Proceedings / SPIE -- the International Society for Optical Engineering ; v. 4218
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目次情報: 続きを見る
Preface
High Purity Silicon Fabrication Techniques
Advanced Silicon Wafers for 0.18 [mu]m Design Rule and Beyond: Epi and fFLASH! / R. Schmolke ; M. Blietz ; R. Schauer ; D. Zemke ; H. Oelkrug ; W. v. Ammon ; U. Lambert ; D. Graf
The Time Dependence of Point Defect Behavior near the Growth Interface in Cz-Si / B.M. Park ; I.S. Choi
Effect of Shape of Crystal-Melt Interface on Point Defect Reaction in Silicon Crystals / K. Nakamura ; S. Maeda ; S. Togawa ; T. Saishoji ; J. Tomioka
High Pull Speed for Fast Pulled Crystal in Cz Growth / H.J. Oh ; J.H. Wang ; K.-M. Kim ; H.-D. Yoo
Micro-Fluctuation of Growth-Rate and Grown-in Defect Distribution in Cz-Si / M. Hasabe ; J. Fukuda ; T. Iwasaki ; H. Harada ; M. Tanaka
Direct Proof of Argon Atoms Incorporated Into High-Purity Silicon Single Crystals During Growth in Argon Gas Ambient / A.G. Ulyashin ; R. Job ; W.R. Fahrner ; A.V. Mudryi ; A.I. Patuk ; I.A. Shakin
Nucleation of Void Defects in Cz Silicon / Y. Yamanaka ; K. Tanahashi ; T. Mikayama ; N. Inoue ; A. Mori
The Formation Mechanism of Coupled Voids in Czochralski Silicon / F. Ishikawa ; S. Sadohara
Valence Force Field Analysis of Nitrogen in Silicon / A. Koukitsu
Intrinsic and Inpurity Related Defects
Silicon Float Zone Crystal Growth as a Tool for the Study of Defects and Impurities / T.F. Ciszek ; T.H. Wang
Transient Simulation of Grown-in Defect Dynamics in Czochralski Crystal Growth of Silicon / T. Mori ; Z. Wang ; R.A. Brown
Detection of Oxygen-Related Defects in Silicon Wafers by Highly Selective Reactive Ion Etching / K. Nakashima ; Y. Watanabe ; T. Yoshida ; Y. Mitsushima
Misfit Dislocation Nucleation Study in P/P[superscript +] Si / P. Feichtinger ; M.S. Goorsky ; D. Oster ; T. D'Silva ; J. Moreland
Screening of Dislocations in Silicon by Point Defects / I.V. Peidous ; K.V. Loiko
Vacancy-Nitrogen Complexes in Float-Zone Silicon / F. Quast ; P. Pichler ; H. Ryssel ; R. Falster
Oxygen Precipitation Behavior and its Optimum Condition for Internal Gettering and Mechanical Strength in Epitaxial and Polished Silicon Wafers / K. Sueoka ; M. Akatsuka ; T. Onno ; E. Asayama ; Y. Koike ; N. Adachi ; S. Sadamitsu ; H. Katahama
Threshold Stresses of Dislocation Generation Onset in Silicon / N. Balasubramanian ; T. Schuelke
Aggressive Monitoring of OSFs Using High Temperature Oxidation / K.-M. Bae ; J.-R. Kim ; D.-M. Lee ; S.-S. Kim ; C.-G. Koh ; S.-H. Pyi
Formation and Annihilation of Epitaxial Stacking Faults Generated from Pre-Existing Nucleation Sites in Silicon / C.R. Cho ; K.Y. Noh ; D.H. Lee ; Y.S. Kim ; S.W. Ko ; C.W. Kim ; D.H. Kim ; C.B. Son ; S.J. Kim ; D.H. Cho ; J.J. Choi ; D.J. Kim ; K.M. Bae ; G.A. Rozgonyi
Bulk and Surface Properties of Cz Silicon After Hydrogen Plasma Treatments / V.P. Markevich ; L.I. Murin ; J.L. Lindstrom ; V. Raiko ; J. Engemann
Metallic Impurities in Silicon
Tin Doping Effects in Silicon / E. Simoen ; C. Claeys ; V.B. Neimash ; A. Kraitchinskii ; M. Kras'ko ; O. Puzenko ; A. Blondeel ; P. Clauws
In-Situ Measurement of Iron in P-type Silicon with the [mu]W-PCD Technique / M. Porrini ; P. Tessariol
Radial Distributions of Transition Metal Defects in Float Zone Silicon Crystals / H. Lemke ; W. Zulehner ; B. Hallmann
Progress in Understanding the Physics of Copper in Silicon / A.A. Istratov ; C. Flink ; S. Baluasubramanian ; E.R. Weber ; H. Hieslmair ; S.A. McHugo ; H. Hedemann ; M. Seibt ; W. Schroter
Effect of Cobalt and Copper Contamination on the Electrical Properties of Processed Silicon / J. Benton ; T. Boone ; D. Jacobson ; P. Silverman ; C. Rafferty ; S. Weinzierl ; B. Vu
Copper Stable Isotope Spike Method as A Tool for Low Temperature Out-Diffusion of Copper in P-Type Silicon / B.-J. Maeng ; H.-S. Oh ; Y.-K. Hong
Effect of Aluminum on Oxide Growth and Oxide Charges in Silicon Wafers / H. Shimizu ; M. Ikeda ; C. Munakata ; N. Nagashima
Gettering Studies
Impact of Annealing Temperature and Cooling Rate on the Gettering of Fe by Polysilicon Backside / M.B. Shabani ; Y. Shiina ; Y. Shimanuki
300 mm Epi PP Wafer: Is There Sufficient Gettering? / D. Graff ; R. Wahlich ; W. Siebert ; E. Daub ; W.v. Ammon
Influence of LSTD Size on the Formation of Denuded Zone in Hydrogen Annealed Cz Silicon Wafers / R. Takeda ; T. Minami ; H. Saito ; Y. Hirano ; H. Fujimori ; K. Kashima ; Y. Matsushita
Integrated Gettering of Metallic Contaminants by Nanocavities in FZ Silicon Wafers / I. Perichaud ; E. Yakimov ; S. Martinuzzi
On the Effect of the Precipitation on DRAM Device Yield / R. Winkler
Intrinsic Gettering in Nitrogen Doped Czochralski Crystal Silicon / D. Yang ; R. Fan ; Y. Shen ; D. Tian ; L. Li ; D. Que
Device Performance
Trends in Lifetime Measurements / D.K. Schroder
Epitaxial Layer Lifetime Characterization in the Frequency Domain / J.E. Park ; S.E. Tan ; B.D. Choi ; M. Fletcher ; A. Buczkowski ; F. Kirscht
Minority Carrier Lifetime and Impurity Level Scan Map in Silicon / O. Palais ; J.J. Simon
Lifetime and Leakage Current Studies in Shallow P-N Junctions Fabricated in a Deep High-Energy Boron Implanted P-Well / A. Poyai ; R. Rooyackers ; G. Badenes ; E. Gaubas
Carrier Lifetime Control and Characterization of High-Resistivity Silicon Used for High-Power Devices / H.-J. Schulze ; A. Frohnmeyer ; F.-J. Niedernostheide ; F. Hille ; P. Tutto ; T. Pavelka ; G. Wachutka
Two Dimensional Leakage Current Distribution of Ultrathin Oxide on Stepped Si Surface / M. Murata ; N. Tokuda ; D. Hojo ; K. Yamabe
The Gate oxide Quality of Annealed Cz Silicon Wafers and Its Influence on 4M DRAM Device Yield and Reliability
Investigation of GOI Test Methods on Silicon Surface Defect Failure Mechanisms / F. Gonzalez ; M. Hider ; R. Barbourm ; J. Hull ; S. Kitagawa
Gate oxide Integrity Response as a Function of Near the Surface Crystal Defects Morphology / G. Borionetti ; P. Godio ; F. Bonoli ; M. Cornara ; R. Orizio
Impacting Device Performance and Yield Through Sacrificial Oxidation Improvements / S. Ambadi ; D. Hannoun ; K. Kamekona ; J. Pearse ; G. Chang
On the Influence of the Interstitial Oxygen on DRAM Device Yield and Reliability
A Process Simulation Model for the Effects Due to Nitridation of Oxides / Y.-S. Oh ; D.E. Ward
Device Applications
High Resistivity Cz Silicon for RF Applications Substituting GaAs* / T. Abe ; W. Qu
Surface and Bulk Properties of Oxygenated FZ Silicon Wafers for Particle Detector Applications / P. Bellutti ; M. Boscardin ; G.-F. Dalla Betta ; L. Ferrario ; P. Gregori ; N. Zorzi
Intrinsic Defects in FZ Silicon and Their Impact on X-Ray PIN Sensor Parameters / H. Rieman ; A. Ludge ; K. Schwerd
SOI Wafer Fabrication by Atomic Layer Cleaving / M.I. Current ; I.J. Malik ; S.W. Bedell ; S.N. Farrens ; H. Kirk ; M. Korolik ; S. Kang ; M. Fuerfanger ; F.J. Henley
Effect of Material Properties on Stress-Induced Defect Generation in Trench SOI / W.A. Nevin ; K. Somasundram ; S. Blackstone ; S. Magee ; A.T. Paxton
A New Substrate Engineering Technique to Realize Silicon on Nothing (SON) Structure Utilizing Transformation of Sub-micron Trenches to Empty Space in Silicon (ESS) by Surface Migration / Y. Tsunashima ; T. Sato ; I. Mizushima
Novel and Improved Characterization Techniques
Silicon Defect characterization by High Resolution Laplace Deep Level Transient Spectroscopy* / A.R. Peaker ; L. Dobaczewski ; O. Andersen ; L. Rubaldo ; I.D. Hawkins ; K. Bonde Nielsen ; J.H. Evans-Freeman
Surface-Separated Collection of Ionic Species for Ion-Chromatography Analysis on Silicon Wafers / K. Yanagi ; H. Shibata ; K. Nagai ; M. Watanabe
Photomagnetic Detection of Doping Inhomogeneities in Silicon Crystals Using SQUID Magnetometers / H. Riemann ; J. Beyer ; Th. Schurig
The Measurement of Nitrogen in Silicon Substrates by SIMS / R.S. Hockett ; D.B. Sams
Laser Spectroscopy Methods for Nondestructive Analysis of Polycrystalline Silicon Thin Films and Silicon Surfaces / D. Milovzorov ; N. Chigarev
Impact of the Purity of Silicon on the Evolution of Ion Beam Generated Defects: From Research to Technology* / V. Privitera
Microscopic Characterization of Electrochemical Properties of Silicon Wafer Surfaces* / T. Homma ; J. Tsukano ; T. Osaka
Use of Diode Diagnostics for Silicon Wafer Quality Characterization: Effect of COP on PN Junction Leakage* / H. Kubota ; H. Nagano ; J. Sugamoto ; H. Matsushita ; M. Momose ; S. Nitta ; S. Samata ; N. Tsuchiya
Crystal Defect Information Obtained by Multiple Wafer Recleaning / L. Mule'Stagno ; S. Keltner ; R. Yalamanchili ; M. Kulkarni ; J. Libbert ; M. Banan
Resonance Ultrasonic Diagnostics of As-Grown and Process-Induced Defects in Cz Silicon / A. Belyaev ; I. Tarasov ; S. Ostapenko ; S. Koveshnikov ; V.A. Kochelap ; A.E. Beyaev
Deposition Mechanism of Trace Metals on Silicon Wafer Surfaces in Ultra Pure Water
A Study of "twin" [100] Square Hillock Silicon Crystalline Defects on Silicon Substrate in Wafer Fabrication Using 155 Wright Etch / H. Younan
Authors Index
Subject Index
Preface
High Purity Silicon Fabrication Techniques
Advanced Silicon Wafers for 0.18 [mu]m Design Rule and Beyond: Epi and fFLASH! / R. Schmolke ; M. Blietz ; R. Schauer ; D. Zemke ; H. Oelkrug ; W. v. Ammon ; U. Lambert ; D. Graf
4.

図書

図書
editors, R. Singh ... [et al.] ; [sponsord by] Dielectric Science and Technology and Electronics Divisions
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 226 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-7
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5.

図書

図書
editors, K.B. Sundaram ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  x, 286 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-7
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目次情報: 続きを見る
Preface
Organizers
Oxide Wear-Out, Reliability, Stress and Interfaces / I:
A Review of Oxide Wearout, Breakdown, and Reliability / D. Dumin
Surface And Interface Study Of Ion Beam Deposited Silicon oxide Thin films / Heinz D. Wazenboeck ; Emmerich Bertagnolli ; Bernhard Basnar ; Juergen Smoliner ; Martin Gritsch ; Herbert Hutter ; Josef Brenner ; C. Tomastik ; Herbert Storri
Study of Inversion Layer Hole Mobility In p-Mosfet During High-field Stressing / R. Jarawal ; D. Misra
Two Limiting Thinnesses Of The Ultrathin Gate Oxide / Samares Kar
SiO[subscript 2] Stress and Interfaces / II:
The Connection Between oxide leakage currents and Si/SiO[subscript 2] Interface Trap Generation / P. M. Lenahan
Charging Damage During Plasma Enhanced Dielectric Deposition / K. Cheung
Kinetics and Mechanisms of Organic Contaminant Interactions at Silicon Surfaces in High Temperature Processes / N. Rana ; P. Raghu ; F. Shadman
SiO[subscript 2] Films and Properties / III:
Remote Plasma Deposited Gate Dielectrics on Si and SiGe Mosfets / T. Ngai ; R. Sharma ; J. Fretwell ; X. Chen ; J. Chen ; W. Brookover ; S. Banerjee
Rapid Thermal Processes of High Permittivity Films on Silicon for ULSI Gate Dielectrics Applications / S. P. Tay ; R. Sharangpani ; Y. Z. Hu
Processing of Thick Thermal Gate Oxides in Trenchs / C. T. Wu ; R. Ridley ; G. Dolny ; T. Grebs ; J. Hao ; S. Suliman ; B. Venkataraman ; O. Awadelkarim ; R. Williams ; P. Roman ; J. Ruzyllo
Electrical Properties of SiO[subscript 2]-Films Prepared by VUV Chemical Vapor Deposition / Y. Motoyama ; J. Miyano ; K. Tosikawa ; Y. Yagi ; K. Kurosawa ; A. Yokotani ; W. Sasaki
SiO[subscript 2] Film Deposition on Different Substrate Materials by Photo- CVD Using Vacuum Ultraviolet Radiation / K. Toshikawa
Silicon Nitrides/ Oxynitrides / IV:
Low Energy Ion Irradiation of Silicon: Compound Formation and Segregation of Impurities / M. Petravic ; J. S. Williams ; P. N. K. Deenapanray
Characteristics of Silicon Oxynitrides Made By ECR Plasmas / J. A. Diniz ; P. J. Tatsch ; J. Swart
Radiation Hardening of Oxynitrides Formed By Low Nitrogen Implantation into Silicon Prior to Oxidation / J. Godoy Fo
Silicon Nitrides/ Oxynitrides II / V:
Material and Process Considerations of Ultra thin Silicon (Oxy) Nitride Films Grown on Silicon and SiO[subscript 2] Surfaces / C. P. D'Emic ; E. P. Gusev ; K. K. Chan ; T. Zabel ; M. Copel ; R. Murphy ; P. Kozolowski ; J. Newbury
Silicon OxyNitride: A Versatile Material for Integrated Optics Application / K. Worhoff ; A. Driessen ; P. V. Lambeck
Characterization of Silicon Oxynitride Thin Films Deposited By ECR-PECVD / C. Simionescu ; J. Wojcik ; H. K. Haugen ; J. A. Davies ; P. Mascher
Silicon Nitrides/ Oxynitrides III / VI:
Characterization of Low- Temperature Magnetoplasma- Grown Si Oxynitride and Si Oxide / H. Ikoma
Advances in Single Wafer Chemical Deposition of Oxide and Nitride films / W. Palmer ; Z. Gabric
High Integrity Direct Oxidation/Nitridation at Low Temperatures Using Radicals / T. Ohmi ; S. Sugawa ; M. Hirayama
Silicon Nitride
Thermally Induced Stress Changes in High Density Plasma Deposited Silicon Nitride Films / R. E. Shah ; H. Baumann ; D. Serries ; M. Mikulla ; R. Keiffer
Effect of Oxygen in Deposited Ultra Thin Silicon Nitride Film on Electrical Properties / K. Muraoka ; K. Kurihara
Influence of Low- energy argon Ion Bombardment and Vacuum Annealing on the Silicon Nitride Surface Properties / I. P. Petrenko ; V. A. Gritsenko ; L. M. Logvinsky ; H. Wong
Authors Index
Subject Index
Preface
Organizers
Oxide Wear-Out, Reliability, Stress and Interfaces / I:
6.

図書

図書
editors, M. Meyyappan, D.J. Economou, S.W. Butler ; [sponsored by] Dielectric Science and Technology and Electronics Divisions
出版情報: Pennington, NJ : Electrochemical Society, c1997  ix, 347 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-9
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7.

図書

図書
editors M. Jamal Deen ... [et al.] ; Dielectric Science and Technology and Electronics Divisions [of the Electrochemical Society]
出版情報: Pennington, New Jersey : Electrochemical Society, c1997  xiii, 588 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-10
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8.

図書

図書
editors, M. Cahay ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1997  x, 494 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-11
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9.

図書

図書
editor, S.N.G. Chu ... [et al.] ; Electronics Division [of the Electrochemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1997  x, 390 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-21
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10.

図書

図書
editors, Bernd O. Kolbesen ... [et al.] ; Electronics Division [of the Electrochemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1997  x, 518 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-22
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