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1.

図書

図書
editors, R.L. Opila ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001-2003  3 v. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-26, 2002-1, 2003-21
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2.

図書

図書
lead editor, Andrzej Wieckowski ; associate editors, E.W. Brooman ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  ix, 280 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-20
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3.

図書

図書
editors, B.A. Shaw, R.G. Buchheit, J.P. Moran
出版情報: Pennington, N.J. : Electrochemical Society, c2001  ix, 456 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-23
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4.

図書

図書
editors, A.G. Baca, R.F. Kopf
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 214 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-18
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目次情報: 続きを見る
Preface
Symposium Organizers
State-of-the-art Program on Compound Semiconductors (XXXIII)
InP HBT and HEMT Technology and Applications / A. Gutierrez-Aitken ; A. K. Oki ; D. C. Streit ; R. Lai ; D. Sawdai ; Y. C. Chen ; E. Kaneshiro ; R. Grundbacher ; P. C. Grossman ; T. Block ; P. Chin ; M. Barsky ; M. Wojtowicz ; H. C. Yen
Reduced Area InGaAs/InP HBT Device Fabrication for High Speed Circuit Applications / R. F. Kopf ; N. G. Weimann ; R. A. Hamm ; R. W. Ryan ; A. Tate ; M. A. Melendes ; R. Melendes ; Q. Lee ; G. Georgiou ; Y. Baeyens ; Y-K. Chen
Non-Crystallographic Wet Etching of Gallium Arsenide / A. G. Baca ; J. R. Laroche ; P. C. Chang ; F. Ren
Chemical Etching Behavior of n-AlGaAs/p-AlGaAs Structures under Different Light Illumination Conditions / K. Shigyo ; Z. Kawazu
Progress in Mid-IR Type-II Interband Cascade Lasers / R. Q. Yang ; J. L. Bradshaw ; J. D. Bruno ; J. T. Pham ; D. E. Wortman
Development of III-Nitrides for Near-Infrared Optoelectronics using Intersubband Transitions / H. M. Ng ; C. Gmachl ; S. N. G. Chu ; A. Y. Cho
Visible Vertical Cavity Light Emitters for Fibre Optical Communication / M. Saarinen ; V. Vilokkinen ; P. Sipilo ; N. Xiang ; S. Orsila ; M. Guina ; P. Melanen ; M. Dumitrescu ; P. Uusimaa ; P. Savolainen ; M. Pessa
Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors / N. Y. Li ; E. Armour ; P. R. Sharps ; H. Q. Hou
Antimonide-Based Long-Wavelength Lasers on GaAs Substrates / J. F. Klem ; O. Blum
Novel MOS Schemes for Electronic Devices with Photoanodically Grown Oxides on GaN Surfaces / D. Mistele ; T. Rotter ; R. Ferretti ; H. Klausing ; F. Fedler ; O. K. Semchinova ; J. Stemmer ; J. Aderhold ; J. Graul
GaN Power Devices / S. J. Pearton ; A. P. Zhang ; G. Dang ; X. A. Cao ; K. P. Lee ; H. Cho ; B. P. Gila ; J. W. Johnson ; C. Monier ; C. R. Abernathy ; J. Han ; J.-I. Chyi ; C.-M. Lee ; T.-E. Nee ; C.-C. Chuo ; G. C. Chi
Fabrication of an Integrated Optics 1 to 2 Optical Switch / Y. Hernandez ; J.-P. Vilcot ; D. Decoster ; J. Chazelas
Optical Characterization of Acceptor Implantation in GaN / B. J. Skromme ; G. L. Martinez ; A. Suvkhanov ; L. Krasnobaev ; D. B. Poker
Cantilever Epitaxy: A Simple Lateral Growth Technique for Reducing Dislocation Densities in GaN and Other Nitrides / C. I. H. Ashby ; C. C. Willan ; N. A. Missert ; P. P. Provencio ; D. M. Follstaedt ; G. M. Peake ; L. Griego
The Formation Mechanism of SiC/Si Interface in the Growth of SiC Films on Si / K. S. Nahm ; K. C. Kim ; C. I. Park ; J. I. Roh
SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors / B. Luo ; J. I. Chyi ; T. E. Nee ; C. M. Lee ; C. C. Chuo ; T. J. Anderson
The Effect of N2 Plasma Damage on DC and RF Characteristics of HEMTs / V. P. Trivedi ; C. H. Hsu ; X. Cao ; C. S. Wu ; M. Hoppe ; J. Sasserath ; J. W. Lee
High Speed Devices for Wireless Applications II
III V Enhancement Mode Field Effect Transistor Technologies for Cellular Applications / J. Costa
Indium Phosphide HBT Device Parameter Extraction for Spice Modeling and Process Optimization / J.-M. Kuo ; M. Melendes ; Y. K. Chen
The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors
Fabrication and Materials Characterization of Pulsed Laser Deposited Nickel Silicide Ohmic Contacts to 4H n-SiC / M. W. Cole ; P. C. Joshi ; C. W. Hubbard ; E. Ngo ; J. D. Demaree ; J. K. Hirvonen ; M. Wood ; M. Ervin ; C. J. K. Richardson ; M. H. Wisnioski
Author Index
Subject Index
Preface
Symposium Organizers
State-of-the-art Program on Compound Semiconductors (XXXIII)
5.

図書

図書
editors C.L. Claeys ... [et al.] ; sponsored by the Electrochemical Society, Inc., Electronics Division
出版情報: Bellingham, Wash. : Published in cooperation with SPIE-the International Society for Optical Engineering , Pennington, N.J. : Electrochemical Society, c2000  xix, 696 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-17
Proceedings / SPIE -- the International Society for Optical Engineering ; v. 4218
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目次情報: 続きを見る
Preface
High Purity Silicon Fabrication Techniques
Advanced Silicon Wafers for 0.18 [mu]m Design Rule and Beyond: Epi and fFLASH! / R. Schmolke ; M. Blietz ; R. Schauer ; D. Zemke ; H. Oelkrug ; W. v. Ammon ; U. Lambert ; D. Graf
The Time Dependence of Point Defect Behavior near the Growth Interface in Cz-Si / B.M. Park ; I.S. Choi
Effect of Shape of Crystal-Melt Interface on Point Defect Reaction in Silicon Crystals / K. Nakamura ; S. Maeda ; S. Togawa ; T. Saishoji ; J. Tomioka
High Pull Speed for Fast Pulled Crystal in Cz Growth / H.J. Oh ; J.H. Wang ; K.-M. Kim ; H.-D. Yoo
Micro-Fluctuation of Growth-Rate and Grown-in Defect Distribution in Cz-Si / M. Hasabe ; J. Fukuda ; T. Iwasaki ; H. Harada ; M. Tanaka
Direct Proof of Argon Atoms Incorporated Into High-Purity Silicon Single Crystals During Growth in Argon Gas Ambient / A.G. Ulyashin ; R. Job ; W.R. Fahrner ; A.V. Mudryi ; A.I. Patuk ; I.A. Shakin
Nucleation of Void Defects in Cz Silicon / Y. Yamanaka ; K. Tanahashi ; T. Mikayama ; N. Inoue ; A. Mori
The Formation Mechanism of Coupled Voids in Czochralski Silicon / F. Ishikawa ; S. Sadohara
Valence Force Field Analysis of Nitrogen in Silicon / A. Koukitsu
Intrinsic and Inpurity Related Defects
Silicon Float Zone Crystal Growth as a Tool for the Study of Defects and Impurities / T.F. Ciszek ; T.H. Wang
Transient Simulation of Grown-in Defect Dynamics in Czochralski Crystal Growth of Silicon / T. Mori ; Z. Wang ; R.A. Brown
Detection of Oxygen-Related Defects in Silicon Wafers by Highly Selective Reactive Ion Etching / K. Nakashima ; Y. Watanabe ; T. Yoshida ; Y. Mitsushima
Misfit Dislocation Nucleation Study in P/P[superscript +] Si / P. Feichtinger ; M.S. Goorsky ; D. Oster ; T. D'Silva ; J. Moreland
Screening of Dislocations in Silicon by Point Defects / I.V. Peidous ; K.V. Loiko
Vacancy-Nitrogen Complexes in Float-Zone Silicon / F. Quast ; P. Pichler ; H. Ryssel ; R. Falster
Oxygen Precipitation Behavior and its Optimum Condition for Internal Gettering and Mechanical Strength in Epitaxial and Polished Silicon Wafers / K. Sueoka ; M. Akatsuka ; T. Onno ; E. Asayama ; Y. Koike ; N. Adachi ; S. Sadamitsu ; H. Katahama
Threshold Stresses of Dislocation Generation Onset in Silicon / N. Balasubramanian ; T. Schuelke
Aggressive Monitoring of OSFs Using High Temperature Oxidation / K.-M. Bae ; J.-R. Kim ; D.-M. Lee ; S.-S. Kim ; C.-G. Koh ; S.-H. Pyi
Formation and Annihilation of Epitaxial Stacking Faults Generated from Pre-Existing Nucleation Sites in Silicon / C.R. Cho ; K.Y. Noh ; D.H. Lee ; Y.S. Kim ; S.W. Ko ; C.W. Kim ; D.H. Kim ; C.B. Son ; S.J. Kim ; D.H. Cho ; J.J. Choi ; D.J. Kim ; K.M. Bae ; G.A. Rozgonyi
Bulk and Surface Properties of Cz Silicon After Hydrogen Plasma Treatments / V.P. Markevich ; L.I. Murin ; J.L. Lindstrom ; V. Raiko ; J. Engemann
Metallic Impurities in Silicon
Tin Doping Effects in Silicon / E. Simoen ; C. Claeys ; V.B. Neimash ; A. Kraitchinskii ; M. Kras'ko ; O. Puzenko ; A. Blondeel ; P. Clauws
In-Situ Measurement of Iron in P-type Silicon with the [mu]W-PCD Technique / M. Porrini ; P. Tessariol
Radial Distributions of Transition Metal Defects in Float Zone Silicon Crystals / H. Lemke ; W. Zulehner ; B. Hallmann
Progress in Understanding the Physics of Copper in Silicon / A.A. Istratov ; C. Flink ; S. Baluasubramanian ; E.R. Weber ; H. Hieslmair ; S.A. McHugo ; H. Hedemann ; M. Seibt ; W. Schroter
Effect of Cobalt and Copper Contamination on the Electrical Properties of Processed Silicon / J. Benton ; T. Boone ; D. Jacobson ; P. Silverman ; C. Rafferty ; S. Weinzierl ; B. Vu
Copper Stable Isotope Spike Method as A Tool for Low Temperature Out-Diffusion of Copper in P-Type Silicon / B.-J. Maeng ; H.-S. Oh ; Y.-K. Hong
Effect of Aluminum on Oxide Growth and Oxide Charges in Silicon Wafers / H. Shimizu ; M. Ikeda ; C. Munakata ; N. Nagashima
Gettering Studies
Impact of Annealing Temperature and Cooling Rate on the Gettering of Fe by Polysilicon Backside / M.B. Shabani ; Y. Shiina ; Y. Shimanuki
300 mm Epi PP Wafer: Is There Sufficient Gettering? / D. Graff ; R. Wahlich ; W. Siebert ; E. Daub ; W.v. Ammon
Influence of LSTD Size on the Formation of Denuded Zone in Hydrogen Annealed Cz Silicon Wafers / R. Takeda ; T. Minami ; H. Saito ; Y. Hirano ; H. Fujimori ; K. Kashima ; Y. Matsushita
Integrated Gettering of Metallic Contaminants by Nanocavities in FZ Silicon Wafers / I. Perichaud ; E. Yakimov ; S. Martinuzzi
On the Effect of the Precipitation on DRAM Device Yield / R. Winkler
Intrinsic Gettering in Nitrogen Doped Czochralski Crystal Silicon / D. Yang ; R. Fan ; Y. Shen ; D. Tian ; L. Li ; D. Que
Device Performance
Trends in Lifetime Measurements / D.K. Schroder
Epitaxial Layer Lifetime Characterization in the Frequency Domain / J.E. Park ; S.E. Tan ; B.D. Choi ; M. Fletcher ; A. Buczkowski ; F. Kirscht
Minority Carrier Lifetime and Impurity Level Scan Map in Silicon / O. Palais ; J.J. Simon
Lifetime and Leakage Current Studies in Shallow P-N Junctions Fabricated in a Deep High-Energy Boron Implanted P-Well / A. Poyai ; R. Rooyackers ; G. Badenes ; E. Gaubas
Carrier Lifetime Control and Characterization of High-Resistivity Silicon Used for High-Power Devices / H.-J. Schulze ; A. Frohnmeyer ; F.-J. Niedernostheide ; F. Hille ; P. Tutto ; T. Pavelka ; G. Wachutka
Two Dimensional Leakage Current Distribution of Ultrathin Oxide on Stepped Si Surface / M. Murata ; N. Tokuda ; D. Hojo ; K. Yamabe
The Gate oxide Quality of Annealed Cz Silicon Wafers and Its Influence on 4M DRAM Device Yield and Reliability
Investigation of GOI Test Methods on Silicon Surface Defect Failure Mechanisms / F. Gonzalez ; M. Hider ; R. Barbourm ; J. Hull ; S. Kitagawa
Gate oxide Integrity Response as a Function of Near the Surface Crystal Defects Morphology / G. Borionetti ; P. Godio ; F. Bonoli ; M. Cornara ; R. Orizio
Impacting Device Performance and Yield Through Sacrificial Oxidation Improvements / S. Ambadi ; D. Hannoun ; K. Kamekona ; J. Pearse ; G. Chang
On the Influence of the Interstitial Oxygen on DRAM Device Yield and Reliability
A Process Simulation Model for the Effects Due to Nitridation of Oxides / Y.-S. Oh ; D.E. Ward
Device Applications
High Resistivity Cz Silicon for RF Applications Substituting GaAs* / T. Abe ; W. Qu
Surface and Bulk Properties of Oxygenated FZ Silicon Wafers for Particle Detector Applications / P. Bellutti ; M. Boscardin ; G.-F. Dalla Betta ; L. Ferrario ; P. Gregori ; N. Zorzi
Intrinsic Defects in FZ Silicon and Their Impact on X-Ray PIN Sensor Parameters / H. Rieman ; A. Ludge ; K. Schwerd
SOI Wafer Fabrication by Atomic Layer Cleaving / M.I. Current ; I.J. Malik ; S.W. Bedell ; S.N. Farrens ; H. Kirk ; M. Korolik ; S. Kang ; M. Fuerfanger ; F.J. Henley
Effect of Material Properties on Stress-Induced Defect Generation in Trench SOI / W.A. Nevin ; K. Somasundram ; S. Blackstone ; S. Magee ; A.T. Paxton
A New Substrate Engineering Technique to Realize Silicon on Nothing (SON) Structure Utilizing Transformation of Sub-micron Trenches to Empty Space in Silicon (ESS) by Surface Migration / Y. Tsunashima ; T. Sato ; I. Mizushima
Novel and Improved Characterization Techniques
Silicon Defect characterization by High Resolution Laplace Deep Level Transient Spectroscopy* / A.R. Peaker ; L. Dobaczewski ; O. Andersen ; L. Rubaldo ; I.D. Hawkins ; K. Bonde Nielsen ; J.H. Evans-Freeman
Surface-Separated Collection of Ionic Species for Ion-Chromatography Analysis on Silicon Wafers / K. Yanagi ; H. Shibata ; K. Nagai ; M. Watanabe
Photomagnetic Detection of Doping Inhomogeneities in Silicon Crystals Using SQUID Magnetometers / H. Riemann ; J. Beyer ; Th. Schurig
The Measurement of Nitrogen in Silicon Substrates by SIMS / R.S. Hockett ; D.B. Sams
Laser Spectroscopy Methods for Nondestructive Analysis of Polycrystalline Silicon Thin Films and Silicon Surfaces / D. Milovzorov ; N. Chigarev
Impact of the Purity of Silicon on the Evolution of Ion Beam Generated Defects: From Research to Technology* / V. Privitera
Microscopic Characterization of Electrochemical Properties of Silicon Wafer Surfaces* / T. Homma ; J. Tsukano ; T. Osaka
Use of Diode Diagnostics for Silicon Wafer Quality Characterization: Effect of COP on PN Junction Leakage* / H. Kubota ; H. Nagano ; J. Sugamoto ; H. Matsushita ; M. Momose ; S. Nitta ; S. Samata ; N. Tsuchiya
Crystal Defect Information Obtained by Multiple Wafer Recleaning / L. Mule'Stagno ; S. Keltner ; R. Yalamanchili ; M. Kulkarni ; J. Libbert ; M. Banan
Resonance Ultrasonic Diagnostics of As-Grown and Process-Induced Defects in Cz Silicon / A. Belyaev ; I. Tarasov ; S. Ostapenko ; S. Koveshnikov ; V.A. Kochelap ; A.E. Beyaev
Deposition Mechanism of Trace Metals on Silicon Wafer Surfaces in Ultra Pure Water
A Study of "twin" [100] Square Hillock Silicon Crystalline Defects on Silicon Substrate in Wafer Fabrication Using 155 Wright Etch / H. Younan
Authors Index
Subject Index
Preface
High Purity Silicon Fabrication Techniques
Advanced Silicon Wafers for 0.18 [mu]m Design Rule and Beyond: Epi and fFLASH! / R. Schmolke ; M. Blietz ; R. Schauer ; D. Zemke ; H. Oelkrug ; W. v. Ammon ; U. Lambert ; D. Graf
6.

図書

図書
editors, R. Singh ... [et al.] ; [sponsord by] Dielectric Science and Technology and Electronics Divisions
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 226 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-7
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7.

図書

図書
editors, P.C. Trulove ... [et al.]
出版情報: Pennington, N.J. : The Electrochemical Society, c2000  xiv, 758 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-41
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図書
Electrochemical Society. Meeting ; Electrochemical Society
出版情報: [S.l.] : Electrochemical Society, c1985  xxix, 786 p. ; 26 cm
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9.

図書

図書
editors P.Y. Hou ... [et al.] ; High Temperature Materials Division, Corrosion Division [of the Electrochemical Society]
出版情報: Pennington, New Jersey : Electrochemical Society, c1998  x, 614 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 98-9
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図書

図書
editors, Karl M. Kadish, Rodney S. Ruoff ; [sponsored by] Fullerenes Group [of the Electrochemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1998  xix, 1362 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 98-8
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図書

図書
editors, P. Schmuki ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1997  ix, 538 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-7
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図書
editors, M. Meyyappan, D.J. Economou, S.W. Butler ; [sponsored by] Dielectric Science and Technology and Electronics Divisions
出版情報: Pennington, NJ : Electrochemical Society, c1997  ix, 347 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-9
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図書

図書
editors, J. McBreen, S. Mukerjee, S. Srinivasan ; Energy Technology Division [of the Electrochemical Society]
出版情報: Pennington, New Jersey : Electrochemical Society, Inc., c1997  viii, 370 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-13
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図書

図書
editors, Gregory Jerkiewicz, Philippe Marcus
出版情報: Pennington, NJ : Electrochemical Society, c1997  viii, 316 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; 97-16
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図書

図書
editors, C. Korzeniewski, B.E. Conway
出版情報: Pennington, NJ : Electrochemical Society, c1997  ix, 458 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; 97-17
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図書

図書
editor, S.N.G. Chu ... [et al.] ; Electronics Division [of the Electrochemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1997  x, 390 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-21
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図書

図書
editors, Bernd O. Kolbesen ... [et al.] ; Electronics Division [of the Electrochemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1997  x, 518 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-22
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18.

図書

図書
editor, Sorin Cristoloveanu ; assistant editors, Peter L.F. Hemment .. [et al.] ; Electronics Division [of the Electrchemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1997  x, 414 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-23
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図書

図書
editors, G.S. Mathad, M. Meyyappan, M. Engelhardt ; Dielectric Science & Technology, Electronics, and Electrodeposition Divisions
出版情報: Pennington, NJ : Electrochemical Society, c1998  ix, 370 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-30
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図書

図書
edited by Sheng S. Li, H. C. Liu, M.Z. Tidrow
出版情報: Pennington, NJ : Electrochemical Society, c1997  vii, 280 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-33
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図書
editors, C.R. Abernathy ... [et al.] ; Dielectric Science & Technology, Electronics, and High Temperature Material[s] Divisions of the Electrochemical Society [and] European III-V Nitride Community
出版情報: Pennington, NJ : Electrochemical Society, c1998  viii, 294 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-34
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22.

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図書
editors, Jerzy Ruzyllo ... [et al.] ; Electronics Division [of the Electrochemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1998  xiii, 650 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-35
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図書
editors, H.Q. Hou ... [et al.] ; [sponsored by] Electronics and Luminescence and Display Materials Divisions [of the Electrochemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1998  xi, 642 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 98-2
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図書
editors W.D. Brown ... [et al.] ; Dielectric Science and Technology, and Electronics Divisions [of the Electrochemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1998  x, 366 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 98-3
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図書
editors, S. Raghavan, R.L. Opila, L. Zhang ; Electronics and Dielectric Science and Technology Divisions [of the Electrochemical Society]
出版情報: Pennington, N. J. : Electrochemical Society, c1998  viii, 274 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 98-7
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図書
editors John W. Van Zee ... [et al.] ; Industrial Electrolysis and Electrochemical Engineering and Energy Technology divisions
出版情報: Pennington, NJ : Electrochemical Society, c1998  viii, 370 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 98-10
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図書
editors F. Ren ... [et al.] ; Electronics Division [of the Electrochemical Society]
出版情報: Pennington, N. J. : Electrochemical Society, c1998  ix, 319 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 98-12
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図書
editors, Peter J. Hesketh, Henry Hughes, Wayne E. Bailey
出版情報: Pennington, NJ : Electrochemical Society, c1998  viii, 270 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 98-14
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図書
editors, T. D. Moustakas, S. E. Mohney, S. J. Pearton ; [sponsored by] Dielectric Science and Technology, Electronics, and High Temperature Materials Divisions
出版情報: Pennington, NJ : Electrochemical Society, c1999  vii, 230 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 98-18
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図書
editors, L.T. Romankiw, S. Krongelb, C.H. Ahn ; Electrodeposition Division [of the Electrochemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1999  xv, 706 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 98-20
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図書
edited by S. S. Li ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1999  vii, 242 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 98-21
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32.

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図書
editors, T. Abe ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1999  ix, 530 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-1
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図書
editors, C.S. Murthy, G.R. Srinivasan, S.T. Dunham ; Electronics Division [of the Electrochemical Society]
出版情報: Pennington, New Jersey : Electrochemical Society, c1999
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-2
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図書
editor, Peter L. F. Hemment ; assistant editors, S. Cristoloveanu ... [et al.] ; Electronics Division [of the Electrchemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1999  x, 374 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-3
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図書
editors C. R. Abernathy ... [et al.] ; Electronics Division [of the Electrochemical Society]
出版情報: Pennington, N. J. : Electrochemical Society, c1999  viii, 264 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-4
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editors, J. Leddy, P. Vanysek, M.D. Porter
出版情報: Pennington, NJ : Electrochemical Society, c1999  xiii, 268 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-5
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editors, Karl M. Kadish, Rodney S. Ruoff
出版情報: Pennington, NJ : Electrochemical Society, c1997  xvii, 1248 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-14
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editors, Cor L. Claeys ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1997  ix, 402 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-2
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editors, P.J. Hesketh, G. Barna, H. G. Hughes
出版情報: Pennington, NJ : Electrochemical Society, c1997  vii, 217 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-5
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40.

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editors, Karl M. Kadish, Rodney S. Ruoff
出版情報: Pennington, NJ : Electrochemical Society, c1997  xiii, 780 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-42
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editors, J. L. Davidson ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c1998  xii, 696 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-32
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editors, Lubomyr T. Romankiw, Dean A. Herman, Jr.
出版情報: Pennington, NJ : Electrochemical Society, c1996  xiv, 802 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 95-18
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43.

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edited by Jun-ichi Nishizawa ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1988  viii, 347 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 88-7
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editors, Johna Leddy, R. Mark Wightman
出版情報: Pennington, NJ : Electrochemical Society, c1996  x, 408 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 96-9
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45.

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editors, Karl M. Kadish, Rodney S. Ruoff
出版情報: Pennington, NJ : Electrochemical Society, c1996  xvii, 1368 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 96-10
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editors, D. A. Shores, R. A. Rapp, P. Y. Hou
出版情報: Pennington, NJ : Electrochemical Society, c1997  vii, 362 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 96-26
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edited by S. Srinivasan ... [et al.] ; [sponsored by] the Electrochemical Society. Energy Technology, Battery, Physical Electrochemistry, and High Temperature Materials Divisions
出版情報: Pennington, NJ : The Electrochemical Society, c1994  ix, 509 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 94-23
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edited by F. Ren ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1995  xi, 510 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 95-21
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editors, D. Denton, P.J. Hesketh, H. Hughes
出版情報: Pennington, NJ : Electrochemical Society, c1995  ix, 362 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 95-27
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edited by Hazara S. Rathore
出版情報: Pennington, NJ : Electrochemical Society, c1995  viii, 245 p. ; 23
シリーズ名: Proceedings / [Electrochemical Society] ; v. 95-3
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editors, Cor L. Claeys ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1995  xi, 446 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 95-9
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editors, K. V. Ravi, J. P. Dismukes ; co-organizers, K.E. Spear ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c1995  xx, 731 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 95-4
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edited by Robert J. Gale, George Blomgren, H. Kojima ; [sponsored by the] Physical Electrochemistry and High Temperature Materials divisions
出版情報: Pennington, NJ : Electrochemical Society, c1992  xii, 665 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 92-16
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editors, J.P. Dismukes, K.V. Ravi ; co-editors, K.E. Spear, B. Lux, N. Setaka
出版情報: Pennington, N.J. : Electrochemical Society, c1993  xxxi, 1086 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 93-17
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edited by M.-L. Saboungi, H. Kojima ; [sponsored by the] Industrial Electrolysis and Electrochemical Engineering, Physical Electrochemistry and High Temperature Materials divisions
出版情報: Pennington, NJ : Electrochemical Society, c1993  xiii, 648 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 93-9
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edited by P.J. Hesketh ... [et al.] ; [sponsored by] the Electrochemical Society. Sensors, Electronics and Dielectric Science and Technology Divisions
出版情報: Pennington, NJ : The Electrochemical Society, c1994  viii, 255 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 94-14
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editors, M. McNallan, E. Opila
出版情報: Pennington, New Jersey : Electrochemical Society, c2001-2004  3 v. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-12, 2003-16, 2004-16
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editors, Dim-Lee Kwong ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c2001  xii, 438 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-9
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editors, P.C. Chang ... [et al.] ; sponsoring division, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2002  ix, 326 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-14
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editors, E.D. Wachsman ... [et al.] ; sponsoring divisions, High Temperature Materials, Battery, and Sensor
出版情報: Pennington, N.J. : Electrochemical Society, c2003  x, 536 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-26
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editors, P.C. Chang, S.N.G. Chu, D.N. Buckley
出版情報: Pennington, N.J. : Electrochemical Society, c2001  viii, 164 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-20
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editor, G.S. Mathad ; assistant editors, M. Engelhardt ...[et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  viii, 216 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-24
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editos, J.D. Sinclair ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  xviii, 1162 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-22
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editors, P.J. Hesketh ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2002  viii, 252 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-6
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editors, R.K. Kopf ... [et al.] ; sponsoring divisions, Electronics, Sensor
出版情報: Pennington, N.J. : Electrochemical Society, c2002  ix, 362 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-3
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66.

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editor, G.S. Mathad ; assistant editors, B.C. Baker ... [et al.] ; sponsoring divisions, Dielectric Science and Technology, Electronics, Electrodeposition
出版情報: Pennington, N.J. : Electrochemical Society, c2003  ix, 346 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-22
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図書
editors, R.E. Sah ... [et al.] ; sponsoring divisions, Dielecric Scoeice and Technology, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2003  xii, 636 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-2
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目次情報: 続きを見る
Preface
Interface Characterization / I.:
Electrical Characterization Techniques for Semiconductor-Silicon Dioxide Interface - A Review / M.J. Deen
Si-SiO[subscript 2] Interface Trap Properties and Dependence with Oxide Thickness and with Electrical Stress in MOSFET's with Oxides in the 1-2 nm Range / D. Bauza ; F. Rahmoune
EPR Studies of SiC/SiO[subscript 2] Interfaces in n-type 4H-and 6H- Oxidized Porous SIC / H.J. von Bardeleben ; J.L. Cantin ; M. Mynbaeva ; S.E. Saddow ; Y. Shishkin ; R.P. Devaty ; W.J. Choyke
Related Oxides / II.:
Novel Germanium Technology and Devices for High Performance MOSFETs and Integrated On-Chip Optical Clocking / K.C. Saraswat ; C.O. Chui ; P.C. McIntyre ; B.B. Triplett
Properties of Ultrathin High-k Dielectrics on Si Probed by Electron Spin Resonance-Active Defects: Interfaces and Interlayers / A. Stesmans ; V.V. Afanas'ev
Role of Ultra Thin Silicon Oxide Interfacial Layer in High Performance High Dielectric Constant Gate Dielectrics / R. Singh ; M. Fakhruddin ; K.F. Poole ; S.V. Kondapi ; A. Gupta ; J. Narayan ; S. Kar
Quantum Mechanical Modeling of Capacitance-Voltage and Current-Voltage Behavior for SiO[subscript 2] and High-k Dielectrics / L.F. Register ; Y.-Y. Fan ; S.P. Mudanai ; S.K. Banerjee
Thermally Driven Atomic Transport in Silicon Oxynitride and High-k Films on Silicon / I.J.R. Baumvol ; F.C. Stedile ; J. Morais ; C. Krug ; C. Radtke ; E.B.O da Rosa ; K.P. Bastos ; R.P. Pezzi ; L. Miotti ; G.V. Soares
Investigations of the Structure and Stability of Alternative Gate Dielectrics / S. Stemmer ; Z.Q. Chen ; P.S. Lysaght ; J.A. Gisby ; J.R. Taylor
Comparison of Contamination Effects in Silicon Oxide with that in Hafnium Oxide and Zirconium Oxide Gate Dielectrics / F. Shadman ; P. Raghu ; N. Rana ; C. Yim ; E. Shero
Characteristics of Metal Gate MOS Capacitor with Hafnium Oxynitride Thin Film / K.-J. Choi ; S.-G. Yoon
Charge Trapping in High-Dose Ge-Implanted and Si-Implanted Silicon-Dioxide Thin Films / A.N. Nazarov ; I.N. Osiyuk ; I.P. Tyagulskii ; V.S. Lysenko ; T. Gebel ; W. Skorupa
Film Application / Device Characterization / Reliability / III.:
What Can Low-frequency Noise Learn us About the Quality of Thin-gate Dielectrics? / E. Simoen ; A. Mercha ; C. Claeys
Analysis of Short-channel MOSFET Behavior after Gate Oxide Breakdown and its Impact on Digital Circuit Reliability / G. Groeseneken ; B. Kaczer ; R. Degraeve
Cyanide Treatment to Improve Electrical Characteristics of Si-based MOS Diodes with an Ultrathin Oxide Layer / H. Kobayashi ; T. Kobayashi ; A. Asano ; O. Maida ; M. Takahashi
Process Dependence of Negative Bias Temperature Instability in PMOSFETS / S. Prasad ; E. Li ; L. Duong
Silicon Dioxide Insulating Films for Silicon-Germanium Technology / A. Vijh ; V.J. Kapoor ; R.L. Patterson ; J.E. Dickman
New Reliability Issues of CMOS Transistors with 1.3nm Thick Gate Oxide / M.F. Li ; B.J. Cho ; G. Chen ; W.Y. Loh ; D.L. Kwong
Improved Performance With Low Temperature Silicon Nitride Spacer Process / C.M. Reddy ; S.G.H. Anderson
Interface Studies / Defects / IV.:
Growth of SiO[subscript 2] at the Sc[subscript 2]O[subscript 3]/Si(100) Interface During Annealing / G.A. Botton ; E. Romain ; D. Landheer ; X. Wu ; M.-Y. Wu ; M. Lee ; Z.-H. Lu
A Review of Defect Generation in the SiO[subscript 2] and at Its Interface with Si / J.F. Zhang
Dipoles in SiO[subscript 2]: Border Traps or Not? / D.M. Fleetwood ; S.N. Rashkeev ; Z.Y. Lu ; C.J. Nicklaw ; J.A. Felix ; R.D. Schrimpf ; S.T. Pantelides
Stabilities and Electronic States of Incorporated Nitrogen Atoms at the Interface of SiO[subscript 2]/Si(001) / T. Yamasaki ; C. Kaneta
Electrical Properties and the Reliability of Silicon Nitride Gate Dielectrics Formed by Various Processes and Annealing Treatments / K.-S. Chang-Liao ; J.Y Pan ; C.L. Cheng ; T.K. Wang
Electronically Active Defects in Utra-thin Oxynitride Gate Dielectrics / D.A. Buchanan
Nitrogen Content and Interface Trap Reduction in SiO[subscript 2]/4H-SiC / K. McDonald ; R.A. Weller ; L.C. Feldman ; G.Y Chung ; C.C. Tin ; J.R. Williams
Cathodoluminescence of Thin Films of Silicon Oxide on Silicon / M.V. Zamoryanskaya ; V.I. Sokolov ; I.M. Kotina ; C.G. Konnikov
Predictive Simulation of Void Formation during the Deposition of Silicon Nitride and Silicon Dioxide Films / C. Heitzinger ; A. Sheikholeslami ; H. Puchner ; S. Selberherr
Film Preparation and Characterization I / V.:
Direct-Write Deposition of Silicon Oxide - The Express Lane towards patterned thin Films / H.D. Wanzenboeck ; S. Harasek ; E. Bertagnolli ; M. Gritsch ; H. Hutter ; J. Brenner ; H. Stoeri ; U. Grabner ; G. Hammer ; P. Pongratz
Comprehensive Optical and Compositional Characterization of Silicon-based Thin Films for Photonics / J. Wojcik ; E.A. Irving ; J.A. Davies ; W.N. Lennard ; P. Mascher
Hydrogenated Amorphous Silicon Nitride Deposited by Dc Magnetron Sputtering / K. Mokeddem ; M. Sayhi ; M. Aoucher ; A.C. Chami ; M. Abdessalem
Properties of Annealed Silicon Oxynitride Layers for Optical Applications / K. Worhoff ; G.M. Hussein ; C.G.H. Roeloffzen ; L.T.H. Hilderink
Optimum Structure of Deposited Ultra Thin Silicon Oxynitride Film to Minimize Leakage Current / K. Muraoka ; K. Kurihara ; N. Yasuda ; H. Satake
Plasma Damage in Ultra-thin Gate Oxide Induced by Dielectric Deposition Processes: An Overview on Main Mechanisms and Characterization Techniques / J.-P. Carrere ; J.-C. Oberlin ; S. Bruyere ; P. Ferreira
Electrical Characterization of Thin Oxide Layers by Impedance Spectroscopy Using Silicon/Oxide/Electrolyte (SOE) Structures / M. Chemla ; V. Bertagna ; R. Erre ; F. Rouelle ; S. Petitdidier ; D. Levy
Scaling / Film Preparation and Characterization II / VI.:
Ultrathin Silicon Oxynitride Gate Dielectrics / E.P. Gusev ; C.P. D'Emic ; T.H. Zabel ; M. Copel
Scaling Issues for Advanced SOI Devices: Gate Oxide Tunneling, Thin Buried Oxide, and Ultra-Thin Films / J. Pretet ; A. Ohata ; F. Dieudonne ; F. Allibert ; N. Bresson ; T. Matsumoto ; T. Poiroux ; J. Jomaah ; S. Cristoloveanu
The Effect of the Oxide Network Structure on the Irradiation Behavior of SiO[subscript 2] Films on Silicon / A.G. Revesz ; H.L. Hughes
Atomistic Characterization of Radical Nitridation Process on Si(100) Surfaces / Y. Yasuda ; A. Sakai ; S. Zaima
Atomic, Electronic Structure and Charge Transport Mechanism in Silicon Nitride and Oxynitride / V.A. Gritsenko ; K.A. Nasyrov
Decoupled Plasma Nitridation of Ultra-Thin Gate Oxides for 60-90 nm Technologies / M. Bidaud ; F. Boeuf ; C. Dachs ; C. Parthasarathy ; F. Guyader
A Neutron Reflectivity Study of Silicon Oxide Thin Films / A. Menelle ; M.-L Saboungi
Rapid Thermal and Anodic Oxidations of LPCVD Silicon Nitride Films / Y.-P. Lin ; J.-G. Hwu
MOSFET Degradation with Reverse Biased Source and Drain During High-Field Injection through Thin Gate Oxide / B. Patel ; R.K. Jarwal ; D. Misra
Modeling / Optimization / Characterization / VII.:
Modeling and Electrical Characterization of MOS Structures with Ultra-Thin Gate Oxide / R. Clerc ; G. Ghibaudo
Conduction Modeling of Thick Double-Layer Nitride/Oxide Dielectrics / S. Evseev
Contribution of Individual Process Steps on Particle Contamination during Plasma CVD Operation / H. Setyawan ; M. Shimada ; Y. Imajo ; K. Okuyama
Plasma Nitridation Optimization for Sub-15A Gate Dielectrics / F.N. Cubaynes ; J. Schmitz ; C. van der Marel ; J.H.M. Snijders ; A. Veloso ; A. Rothschild ; C. Olsen ; L. Date
Recovery and Reversibility of Electrical Instabilities in Double-Layer Dielectric Films / A. Cacciato
Low-Temperature Oxidation for Gate Dielectrics of Poly-Si TFTs using High-Density Surface Wave Plasma / K. Azuma ; M. Goto ; T. Okamoto ; Y. Nakata
Characterization of MIS Tunnel Junctions by Inelastic Electron Tunneling Spectroscopy (IETS) / C. Petit ; G. Salace ; D. Vuillaume
Authors Index
Subject Index
Preface
Interface Characterization / I.:
Electrical Characterization Techniques for Semiconductor-Silicon Dioxide Interface - A Review / M.J. Deen
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図書
editors, Bernd O. Kolbesen ... [et al.] ; sponsored by the Electrochemical Society. Electronics Division
出版情報: Pennington, NJ : Electrochemical Society, c2003  xii, 556 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-3
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目次情報: 続きを見る
Preface: ALTECH 2003 "Analytical Techniques for Semiconductor Materials and Process Characterization IV"
"Impurities: Metals, Non-Metals and Organics" / Part 1:
Copper Behavior in Bulk Silicon and Associated Characterization Techniques / T. Heiser ; A. Belayachi ; J.-P. Schunck
Quantification Issues of Trace Metal Contaminants on Silicon Wafers by Means of TOF-SIMS and ICP-MS / P. Rostam-Khani ; P. Vullings ; G. Noij ; W. Claassen
Determination of the Aluminum-Induced Oxide Charge by AC Surface Photovoltage Measurements in N-Type Silicon / H. Shimizu ; M. Ikeda ; R. Shin
Characterization of Heavy Metal Contamination by Capacitance-Frequency Method / K. Hara ; M. Takahashi ; H. Yoshida ; S. Kishino
In-line Copper Contamination Monitoring Using Non-Contact Q-V-SPV Techniques / M. Bohringer ; J. Hauber ; S. Passefort ; K. Eason
Recent Developments in Nuclear Methods in Support of Semiconductor Characterization / B. Brijs ; H. Bender ; C. Huyghebaert ; T. Janssens ; W. Vandervorst ; K. Nakajima ; K. Kimura ; A. Bergmaier ; G. Dollinger ; J. A. van den Berg
Determination of Oxygen in Semiconductor Silicon by Gas Fusion Analysis GFA--Historical and Future Trends / S. Pahlke
High Sensitivity Measurement of Nitrogen in Czochralski Silicon / M. Porrini ; M. G. Pretto ; R. Scala ; V. V. Voronkov
Spark Source Mass Spectrometric Analysis of Low Carbon Contents in Crystalline Silicon / B. Wiedemann ; J. D. Meyer ; H. C. Alt ; H. Riemann
Hydrogen Contamination and Defect Generation in p-type Silicon and Silicon-Germanium Schottky Barrier Test Structures / F. Volpi ; A. R. Peaker ; I. Berbezier ; A. Ronda
Analysis of Oxygen Thermal Donor Formation in n-type Cz-Silicon / J.M. Rafi ; E. Simoen ; C. Claeys ; A. Ulyashin ; R. Job ; W. Fahrner ; J. Versluys ; P. Clauws ; M. Lozano ; F. Campabadal
The Application of Synchrotron Radiation to Semiconductor Materials Characterization / R. Barrett
Ultra-trace Analysis of Light Elements and Speciation of Minute Organic Contaminants on Silicon Wafer Surfaces by means of TXRF in Combination with NEXAFS / B. Beckhoff ; R. Fliegauf ; G. Ulm ; J. Weser ; G. Pepponi ; C. Streli ; P. Wobrauschek ; T. Ehmann ; L. Fabry ; C. Mantler ; B. Kanngiesser ; W. Malzer
TXRF Characterization of Inhomogneous Solids: Influence of Surface Morphology / N. Alov ; K. Oskolok ; A. Wittershagen ; B. O. Kolbesen
Characterization of Trace Organic Contamination on Silicon Surfaces in Semiconductor Manufacturing / K. Saga ; T. Hattori
Characterization of Advanced Semiconductor Materials by Thermal Desorption Mass Spectrometry with Atmospheric, Pressure Ionization / L. Carbonell ; G. Vereecke ; S. Van Elshocht ; M. Caymax ; M. Van Hove ; K. Maex ; P. Mertens
Analysis of Trace VOCs' in Clean Room Air with PDMS/Carboxen SPME Fibers / L. Tuduri ; V. Teetaert ; V. Desauziers ; E. Coffre ; P. Dupont ; M. Camenzind
Cleaning Chemistry with Complexing Agents (CAs): Direct Concentration Measurement of CAs with HPLC / S. Metzger ; B.O. Kolbesen
Complexing Agents (CAs) for Semiconductor Cleaning Chemistries: Characterization of CA Lifetimes by UV/VIS-Spectroscopy / O. Doll
"Thin Films" / Part 2:
Stress Management in IC Manufacturing: [mu]-Raman Spectroscopy Revisited / L.F.T. Kwakman ; D. Delille ; M. Mermoux ; A. Crisci ; G. Lucazeau
Characterization and Metrology of Novel Materials Involved in Advanced CMOS Processes / C. Wyon
Physical Characterization of Thin HfO[subscript 2] Layers by the Combined Analysis with Complementary Techniques / T. Conard ; O. Richard ; J. Petry ; C. Defranoux ; P. Boher ; N. Rochat ; P. Mack ; J. Wolstenholme ; R. Vitchev ; L. Houssiau ; J-J. Pireaux
Analytical Characterization of Process Parameter Influence on the Initial Growth and Crystallinity of Atomic Layer Deposition HfO[subscript 2] Thin Films / D. Blin ; G. Rolland ; P. Holliger ; F. Martin ; J.-F. Damlencourt ; T. Lardin ; P. Besson ; S. Haukka ; M.-N. Semeria
Application of X-Ray Fluorescence Spectrometry in Characterization of High-k Ultra-Thin Films / C. Zhao ; F. Dortu ; S. DeGendt ; M. Heyns ; W. Besling ; J. W. Maes
Characterization of Nano-Laminate Structure Using Grazing Incidence XRD and ATR-FTIR / V. Consier ; G. Roebben ; O. Van Der Biest
High-Resolution Analysis of the HfO[subscript 2]-SiO[subscript 2] Interface by Soft X-Ray Photoelectron Spectroscopy / O. Renault ; D. Samour ; J. -F. Damlencourt ; A. -M. Papon ; S. Marthon ; N. T. Barrett
Ag Electrodeposition on n-InP Followed in Situ by Photoluminescence / I. Gerard ; C. Mathieu ; P. Tran-Van ; A. Etcheberry
Characterization by Electrochemistry and Chemical Surface Analysis of an Oxide Film on n-InP / N.C. Quach ; N. Simon
Charging Effects on Ferroelectric SBT Thin Films Imaged by Non-Contact Electrostatic Force Microscopy / N. Junghans
Two Dimensional Carrier Profiling Using Scanning Capacitance Microscopy / N. Duhayon ; T. Clarysse ; D. Alvarez ; P. Eyben ; M. Fouchier ; L. Hellemans
"Non-Destructive and Optical Methods" / Part 3:
Spectroscopic Ellipsometry in the VUV Range Applied to the Characterization of Atomic Layer Deposited HfO[subscript 2], Al[subscript 2]O[subscript 3] and HfAIO[subscript x] Thin Layers for High k Dielectrics / S. Bourtauld ; J. P. Piel
Optical Characterisation of High-? Materials Deposited by ALCVD / E. Bellandi ; B. Crivelli ; A. Elbaz ; M. Alessandri
Macroscopic and Microscopic Photoluminescence Mapping System Applicable to 300 mm Wafers / Z. Li ; M. Tajima ; R. Shimidzu
In-Line and Non-Destructive Analysis of Epitaxial Si[subscript 1-x-y]Ge[subscript x]C[subscript y] by Spectroscopic Ellipsometry and Comparison with Other Established Techniques / R. Loo ; P. Meunier-Beillard ; R. Delhougne ; T. Koumoto ; L. Geenen
Study by Spectroellipsometry of the InP Surface Evolution by Cerium Acidic Solution / B. Canava ; J. Vigneron ; M. Stchakovsky ; J. P. Gaston
Characterisation of Bulk and Surface Properties in Semiconductors Using Non-Contacting Techniques / A. Castaldini ; D. Cavalcoli ; A. Cavallini ; M. Rossi
"Characterization of Defects, Technology and Devices" / Part 4:
Focused Ion Beam Analysis of Cu/Low-k Metallization Structures
Preface: ALTECH 2003 "Analytical Techniques for Semiconductor Materials and Process Characterization IV"
"Impurities: Metals, Non-Metals and Organics" / Part 1:
Copper Behavior in Bulk Silicon and Associated Characterization Techniques / T. Heiser ; A. Belayachi ; J.-P. Schunck
69.

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図書
editors, E.B. Stokes ... [et al.] ; sponsoring divisions, Electronics, Sensor
出版情報: Pennington, N.J. : Electrochemical Society, c2003  ix, 278 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-4
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Preface
III-V Optoelectronics / Session 1:
Novel Waveguide Photodetectors on InP with Integrated Light Amplification / J. Piprek ; D. Pasquariello ; D. Lasaosa ; J.E. Bowers
Improvement of Kink Characteristics of 850nm AlGaAs/GaAs Implant Vertical Cavity Emitting Lasers Utilizing Silicon Implantation Induced Disordering / H.C. Kuo ; Fang-I Lai ; Tao-Hung Hsueh ; Ya-hsien Chang ; Wen-chun Shu ; Li-Hung Lai ; S.C Wang
Effect of Post-Oxidation Annealing on VCSEL Device Performance / N.C Das ; W. Chang
Low Voltage Operation Phototransistor with InGaP/AlGaAs/GaAs Composite Emitter / S.W. Tan ; W.T. Chen ; M.Y. Chu ; W.S. Lour
III-V Devices and Processing / Session 2:
Observation of Current Gain Collapse in Large-area HBT with Rectangular Emitter and Etched Base / M.-K. Tsai ; S.-W. Tan ; W.-S. Lour ; Y.-J. Yang
Characteristics of Sulfur and InGaP-passivated InGaP/GaAs Heterojunction Bipolar Transistors
Interconnect Copper Metallization of InGaP HBT's using WN[subscript x] as the Diffusion Barrier / Shang-Wen Chang ; Edward Yi Chang ; Cheng-Shih Lee
Solvent-affected Chemistry at GaAs/sulfide Solution Interface / Mikhail V. Lebedev ; Thomas Mayer ; Wolfram Jaegermann
InP Electrochemistry / Session 3:
Anodic Behavior of InP: Film Growth, Porous Structures, and Current Oscillations / D.N. Buckley ; C. O'Dwyer ; E. Harvey ; T. Melly ; M. Serantoni ; D. Sutton ; S.B. Newcomb
A Mechanistic Study of Anodic Formation of Porous InP
Growth of Anodic Oxides on n-InP Studied by Electrochemistry and Surface Analysis: Correlation between Oxidation Methods and Passivating Properties / N. Simon ; N.C. Quach ; A. Etchberry
Localized Photoetching of n-InP, at Open-circuit Potential / Catherine Debiemme-Chouvy ; Anne Quennoy ; Isabelle Gerard
Poster Session
Investigation of Defect Passivation in 4H-SiC using Hydrogen Plasma and Effect of Post-Annealing / Myung Yoon Um ; In Sang Jeon ; Da Il Eom ; Bum Seok Kim ; Ho Keun Song ; Hoon Joo Na ; Dae Hwan Kim ; Jae Kyeong Jeong ; Hyeong Joon Kim
HRTEM Study of SiC Buried Layer formed by C+ Implantation in Silicon / Yumei Xing ; Yuehui Yu ; Zixin Lin
(Photo-)Electrochemistry at n-GaN Grown on Sapphire and on Si: A Comparitive Study / I.M. Huygens ; K. Strubbe
MOCVD Growth of InP/InGaAlAs Distributed Bragg Reflectors / J.Y. Tsai ; T.C. Lu ; S.C. Wang
Very Low Temperature Growth of c-axis oriented ZnO Thin Film on Si Substrates / Hyoun Woo Kim ; Kwang Sik Kim ; Chongmu Lee
Fabrication and NO2 Surface Photo Voltage Sensor Properties of Nanoporous Tin-Silica Film / Brian Yuliarto ; HaoShen Zhou ; Takeo Yamada ; Itaru Honma ; Keisuke Asai
Emerging Materials / Session 4:
Man-made Quantum Structures: From Superlattices to Quantum Dots / Raphael Tsu
Effects of Composition and Layer Thickness on the Magnetic and Structural Characteristics of GaMnN / G.T. Thaler ; M. Overberg ; R. Frazier ; C.R. Abernathy ; S.J. Pearton ; F. Ren ; Y.D. Park ; R. Rairigh ; J. Kelly ; J.S. Lee ; N. Theodoropoulou ; A.F. Hebard|p141
Diamond--the Next Generation Material for High Power Electronics? / A. Aleksov ; M. Schreck ; P. Schmid ; E. Kohn
III-Nitride Light Emitting Diodes / Session 5:
Deep Ultraviolet Light Emitting Diodes using AlGaN Quantum Well Active Region / M. Asif Khan ; Maxim Shatalov ; Vinod Adivarahan ; Jain Ping Zhang ; Ashay Chitnis ; Grigory Simin ; Jinwei Yang
Dramatically Improved Current Spreading in UV LED's via Si Delta-doping in the n-AlGaN Cladding Layer / S.F. LeBoeuf ; X.A. Cao ; L.B. Rowland ; J.J. Flynn ; G.R. Brandes
Carrier Capture and Recombination at Localized States in InGaN/GaN Light-Emitting Diodes / J.L. Garrett ; S.D. Arthur ; D.W. Merfeld
Wide Bandgap Materials and Electronic Devices / Session 6:
Instabilities in GaN based FET Structures--Nature and Alternative Structures / M. Neuburger ; I. Daumiller ; A. Krtschil ; A. Krost ; J. Van Nostrand ; T. Jenkins
AlGaN Power Rectifiers / J. Kim ; K. Baik ; B.P. Gila ; Y. Irokawa ; J.-I. Chyi ; S.S. Park ; Y.J. Park
Physics of Electron Injection-Induced Effects in III-Nitrides / Leonid Chernyak ; William Burdett
DC Characteristics of AlGaN/GaN Heterostructure Field-effect Transistors on Free-Standing GaN Substrates / B. Luo ; C.-C. Pan ; G.-T. Chen ; J.I. Chyi ; Y.J Park
Innovative Substrate Solutions for Wide Band Gap Materials: the Smart Cut Approach / F. Letertre ; N. Daval ; F. Templier ; L. DiCioccio ; C. Richtarch ; B. Faure ; A.M. Cartier ; I. Matko
Optical Properties of III-Nitride Materials / Session 7:
Microcathodoluminescence Characterization of III-Nitride Heterojunctions and Devices / L.J. Brillson ; G.H. Jessen ; S.H. Goss ; X.L. Sun ; S.T. Bradley ; B.D. White ; P.E. Smith ; T.E. Levin ; A.P. Young ; D.C. Look ; J.E. Van Nostrand ; G.D. Via ; J.K. Gillespie ; R.W. Dettmer ; J.S. Sewell ; R. Fitch
New Spectroscopic Data of Erbium Ions in GaN Thin Films / F. Pelle ; F. Auzel ; J.M. Zavada ; D.S. Lee ; A.J. Steckl
Spectroscopic Ellipsometry Applied to the Characterization of GaN and AlGaN/GaN Heterostructures / P. Boher ; S. Bourtault ; J.P. Piel
Infrared Photocurrent Spectroscopy of Epitaxial III-Nitride Materials / Edward B. Stokes ; Steven F. LeBoeuf
Fabrication and Characterization of GaN Nanorods / Chang-Chin Yu ; Jung-Wai Chang ; Chia-Feng Lin
Subject Index
Preface
III-V Optoelectronics / Session 1:
Novel Waveguide Photodetectors on InP with Integrated Light Amplification / J. Piprek ; D. Pasquariello ; D. Lasaosa ; J.E. Bowers
70.

図書

図書
editor, S. Cristoloveanu ; assistant editors, G. Celler ... [et al.] ; sponsoring division, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2003  xi, 522 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-5
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Preface
SOI Materials / Part I:
The SOI odyssey / P.L.F. Hemment
Thin film transfer by Smart Cut technology beyond SOI / C. Mazure
Quality improvement of SIMOX wafers by utilizing nitrogen-doped Cz Silicon crystal / K. Kawamura ; I. Hamaguchi ; T. Sasaki ; S. Takayama ; Y. Nagatake ; A. Matsumura
Ultrathin SOI wafer fabrication and metrology / C. Maleville
Replacing the BOX with buried alumina: improved thermal dissipation in SOI MOSFETs / K. Oshima ; S. Cristoloveanu ; B. Guillaumot ; G. Le Carval ; H. Iwai ; M.S. Kang ; Y.H. Bae ; J.W. Kwon ; S. Deleonibus ; J.H. Lee
Studies on novel SOI-structure with AIN film as buried insulator / C. Lin ; M. Zhu ; C. Men ; Z. An ; M. Zhang
Fabrication of sub-micron active layer SSOI substrates using ion splitting and wafer bonding technologies / F.H. Ruddell ; M.F. Bain ; S. Suder ; R.E. Hurley ; B.M. Armstrong ; V.F. Fusco ; H.S. Gamble
Back-end analysis of SOI substrates incorporating metallic layers using a novel non-destructive picosecond ultrasonic technique / N.D. McCusker ; P. McCann ; W.A. Nevin
Silicon-on-insulator-multilayer structure fabricated by epitaxial layer tranfer / W. Liu ; X. Xie ; Q. Lin ; Z. Zhang
Status of 300 mm SOI material: comparisons with 200 mm / H. Hovel ; M. Almonte ; P. Tsai ; J.D. Lee ; S. Maurer ; R. Kleinhenz ; D. Schepis ; R. Murphy ; P. Ronsheim ; A. Domenicucci ; J. Bettinger ; D. Sadana
A study on selective Si[subscript 0.8]Ge[subscript 0.2] etch using polysilicon etchant diluted by H[subscript 2]O for three-dimensional Si structure application / S.M. Kim ; C.W. Oh ; J.D. Choe ; C.S. Lee ; D.G. Park
Estimation of oxygen dose by spectroscopic ellipsometry and investigation of oxide formation mechanism by FT-IR for 160[superscript +]-implanted Si wafers / H. Iikawa ; M. Nakao ; K. Izumi
Development of SiC substrate with buried oxide layer for electron-photon merged devices / S. Hirai
Very low Schottky barrier to n-type silicon with PtEr-stack silicide / X. Tang ; J. Katcki ; E. Dubois ; J. Ratajczak ; G. Larrieu ; P. Loumaye ; O. Nisole ; V. Bayot
Defects and electrical consequences in SOI buried oxides / H.J. Hovel
Relaxed SiGe-on-insulator substrates through implanting oxygen into pseudomorphic SiGe/Si heterostructure / Y. Wu ; Z. Di ; P. Chu
Effect of silicon nitride and silicon dioxide bonding on the residual stress in layer-transferred SOI / A. Tiberj ; J. Camassel ; N. Planes ; Y. Stoemenos ; H. Moriceau ; O. Rayssac
Double-Gate and Various SOI Devices / Part II:
Fully depleted SOI process and device technology for digital and RF application / F. Ichikawa ; Y. Nagatomo ; Y. Katakura ; S. Itoh ; H. Matsuhashi ; N. Hirashita ; S. Baba
Emerging silicon-on-nothing (SON) devices technology / T. Skotnicki ; S. Monfray ; C. Fenouillet-Beranger
60-nm gate length SOI CMOS technology optimised for "System-on-a-SOI-chip" solution / K. Imai ; S. Maruyama ; T. Suzuki ; T. Kudo ; S. Miyake ; M. Ikeda ; T. Abe ; S. Masuda ; A. Tanabe ; J-W. Lee ; K. Shibahara ; S. Yokoyama ; H. Ooka
High performance strained-SOI CMOSFETs / S-I. Takagi ; T. Mizuno ; T. Tezuka ; N Sugiyama ; T. Numata ; K. Usuda ; Y. Moriyama ; S. Nakaharai ; J. Koga ; T. Maeda
Real space transfer devices in SOI / S. Luryi
Issues in high performance FinFET and FDSOI transistor design / J. Kedzierski ; M. Ieong ; E. Nowak
Extremely scaled FinFETs and ultra-thin body SOI CMOS Devices / S. Balasubramanian ; L. Chang ; Y.-K. Choi ; D. Ha ; J. Lee ; P. Ranade ; S. Xiong ; J. Bokor ; C. Hu ; T.-J. King
Ultralow-power FD-SOI design for future mobile systems / T. Douseki ; H. Kyuragi
Status and development of future PD/SOI MOSFETs / S. Krishnan
Investigation of charge control related performances in double-gate SOI MOSFETs / V. Kilchytska ; T.M. Chung ; H. van Meer ; K. de Meyer ; J.P. Raskin ; D. Flandre
Substrate bias effects in SOI FinFETs / J. Pretet ; F. Dauge ; A. Vandooren ; L. Mathew ; B.-Y. Nguyen ; J. Jomaah
The nanoscale double-gate MOSFET for analog applications / D. Jimenez ; B. Iniguez ; J. Sune ; J.J. Saenz
The benefit of SOI technologies for low-voltage RFID applications / P. Villard ; B. Gomez ; J. De Pontcharra ; D. Save ; S. Chouteau ; E. Mackowiak
A novel CMOS memory cell architecture for ultra-low power applications operating up to 280[degree]C / D. Levacq ; V. Dessard
Multi-fin double-gate MOSFET fabricated by using (110)-oriented SOI wafers and orientation-dependent etching / Y. Liu ; K. Ishii ; T. Tsutsumi ; M. Masahara ; H. Takashima ; E. Suzuki
Impact of the graded-channel architecture on double gate transistors for high-performance analog applications / M.A. Pavanello ; J.A. Martino ; A. Kranti ; J.-P. Raskin
Characteristics of two types of MEMS resonator structures in SOI applications / S. Myllymaki ; E. Ristolainen ; P. Heino ; A. Lehto ; K. Varjonen
High-voltage super-junction SOI-LDMOSFETs with reduced drift length / J.M. Park ; T. Grasser ; S. Selberherr
Comparative study of the dynamic performance of bulk and FDSOI MOSFET by means of a Monte Carlo simulation / R. Rengel ; D. Pardo ; M.J. Martin
Partially depleted SOI dynamic-threshold MOSFET for low-voltage and microwave applications / M. Dehan ; D. Vanhoenacker
Figures-of-merit of intrinsic, standard-doped and graded-channel SOI and SOS MOSFETs for analog baseband and RF applications
Comparison of SOI, poly-Si TFT and bulk Si MOS performance using gm/ID methodology / K. Takatori
Optimization of ultra-thin body, fully-depleted SOI device, with raised source/drain / J. Egley ; B. Winstead ; E. Verret ; B. White
Device Physics and Modeling / Part III:
Device models for silicon-on-insulator (SOI) insulated-gate PN-junction devices for electrostatic discharge (ESD) protection circuit design / Y. Omura ; S. Wakita
Evidence for a "linear kink effect" in ultra-thin gate oxide SOI MOSFETs / A. Mercha ; E. Simoen ; J.-M. Rafi ; C. Claeys ; N. Lukyanchikova ; M. Petrichuk ; N. Garbar
An accurate model for threshold voltage and S-factor of partially-depleted surrounding gate transistor (PD-SGT) / Y. Yamamoto ; M. Hioki ; R. Nishi ; H. Sakuraba ; F. Masuoka
Reduction of pass-gate leakage by silicon-thickness thinning in double-gate MOSFETs / W. Sakamoto ; T. Endoh
Accurate and efficient method for accelerated history effect simulations / T. Poiroux ; G. Labourey ; P. Flatresse ; O. Faynot ; M. Belleville ; D. Souil ; B. Giffard
Electron mobility in strained-Si inversion layers grown on SiGe-on-insulator substrates / F. Gamiz ; J.B. Roldan ; A. Godoy ; P. Cartujo-Cassinello ; F. Jimenez-Molinos
Strained Si/SiGe channels: a new performance advantage for PD/SOI CMOS / W. Zhang ; J.G. Fossum
Modeling of Coulomb scattering of electrons in ultrathin symmetrical DG SOI transistor / J. Walczak ; B. Majkusiak
Comparison of partially and fully depleted SOI transistors down to the sub 50-nm-gate length regime / L. Dreeskornfeld ; J. Hartwich ; E. Landgraf ; R.J. Luyken ; W. Rosner ; T. Schulz ; M. Stadele ; D. Schmitt-Landsiedel ; L. Risch
Saturation current model for the n-channel G[superscript 4]-FET / B. Dufrene ; B. Blalock ; M. Mojarradi ; E. Kolawa
Quasi-three-dimensional device simulation of fully depleted MOSFET/SOI focused on surface roughness
Threshold voltage quantum simulations for ultra-thin silicon-on-insulator transistors / J. Lolivier ; F. Balestra
Impact of quantum-mechanical effects on the double-gate MOSFET characteristics / G. Ghibaudo
Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 [mu]m floating-body partially-depleted SOI MOSFET at low temperature / K. De Meyer
SOI thermal resistance and its application to thermal modeling of SOI MOSFETs / M.-C. Cheng ; F. Yu
Fully-quantum theory of SOI MOSFETs / T.J. Walls ; V.A. Sverdlov ; K.K. Likharev
Oxidation simulation of silicon nanostructure on silicon-on-insulator substrates / M. Uematsu ; H. Kageshiwa ; K. Shiraishi
Characterisation and Reliability Issues / Part IV:
Characterization of SOI wafers by photoluminescence spectroscopy, decay and micro/macro-mapping / M. Tajima
Feasibility of surface photovoltage based characterization of ultra-thin SOI wafers / L. Lukasiak ; E. Kamieniecki ; A. Jakubowski ; J. Ruzyllo
Analysis of soft errors in floating channel type surrounding gate transistor (FC-SGT) DRAM cells / F. Matsuoka
Radiation damage in deep submicron partially depleted SOI CMOS / J.M. Rafi ; X. Serra-Gallifa ; M. Kokkoris ; E. Kossionides ; G. Fanourakis
Study of the leakage drain current in graded-channel SOI nMOSFETs at high-temperatures / M. Bellodi
Radiation response of SOI CMOS transistors/4M SRAMs fabricated in UNIBOND substrates / S.T. Liu ; W. Heikkila ; K. Golke ; B. Stinger ; M. Flanery ; A. Hurst ; G. Panning ; G. Kirchner ; W.C. Jenkins
Nature of high-temperature charge instability of fully depleted SOI MOSFETs / A.N. Nazarov ; V.S. Lysenko ; J.P. Colinge
Control of SEU in SOI SRAMs through carrier lifetime engineering / S. Mitra ; D.P. Ioannou ; D.E. Ioannou
Evaluation of commercial ultra-thin SOI substrates using confocal laser inspection system / A. Ogura ; O. Okabayashi
Extraction of high frequency noise parameters of 0.25 [mu]m partially depleted silicon-on-insulator MOSFET: impact of the high resistivity substrate / R. Daviot ; O. Rozeau ; N. Abouchi ; A. Grouillet ; L. Tosti
Temperature and magnetic field dependence of the carrier mobility in SOI wafers by the pseudo-MOSFET method / C. Rossel ; D. Halley
Carrier lifetimes in SOI material
Total dose radiation hardness of double-gate ultra-thin SOI MOSFETs / C.R. Cirba ; R.D. Schrimpf ; L.C. Feldman ; D.M. Fleetwood ; K.F. Galloway
Steady-state characterization of partially depleted SOI CMOS gates / A. Bracale ; E. Dupont-Nivet ; J.-L. Pelloie
Changes in the parameters of silicon-on-insulator structures under irradiation / I.V. Antonova ; D.V. Nikolaev ; O.V. Naumova ; S.A. Smagulova ; V.P. Popov
Spectroscopic ellipsometry characterization of the interfacial roughness in SIMOX wafer / W.J. Li ; Z.R. Song ; K. Tao ; Y.H. Yu ; X. Wang ; S.C. Zou
Subject Index
Author Index
Preface
SOI Materials / Part I:
The SOI odyssey / P.L.F. Hemment
71.

図書

図書
editors, M.D. Allendorf, F. Maury, F. Teyssandier ; sponsoring divisions, High Temperature Materials, Electronics, Dielectric Science and Technology
出版情報: Pennington, NJ : Electrochemical Society, c2003  2 v. (xxviii, 1570 p.) ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-8
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72.

図書

図書
editors, P.C. Trulove ... [et al.] ; sponsoring divisions, Physical Electrochemistry, High Temperature Materials, and Electrodeposition
出版情報: Pennington, N.J. : The Electrochemical Society, c2002  xvi, 1074 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-19
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Max Bredig Award Address
The Simple and the Complex: Revealing the Structure of Molten Salts / G. N. Papatheodorou
Power Applications of Molten Salts
Solvent free Dye-Sensitized Nanocrystalline Solar Cell using Room-Temperature Molten Salt Electrolyte / K. Kawata ; S. M. Zakeeruddin ; M. Gratzel
Performance of Li-Alloy/Ag[subscript 2]CrO[subscript 4] Couples in Molten LiNO[subscript 3]-KNO[subscript 3] Eutectic Electrolyte / R. A. Guidotti ; F. W. Reinhardt
Investigation of the Stability of Low-Temperature Ionic Liquids with High-Activity Anodes / T. D. J. Dunstan ; J. Caja
Investigation of the Influence of Polymer Type on the Electrochemical Behavior of Ionic Liquid/Polymer Gel Electrolytes / T. E. Sutto ; P. C. Trulove ; H. C. De Long
All-Lithium, Iodide-Based, Low-Melting Electrolytes for High-Temperature Batteries
Negative Electrode for Lithium Battery in Room-Temperature Molten Salt / Y. S. Fung ; D. R. Zhu
Direct X-Ray Diffraction Evidence for the Electrochemical Intercalation of an Imidazolium Cation into Graphite from a Room-Temperature Ionic Liquid / K. D. Sienerth
Ion Transport in Ionic-Liquid/Polymer Gel Electrolytes / R. A. Mantz
Fundamental Studies of Nickel Electrode in a Basic Na[AlCl subscript 4] Melt at 300[degree]C / J. Prakash
Ionic Liquids as Thermal Fluids / M. E. Van Valkenburg ; R. L. Vaughn ; M. Williams ; J. S. Wilkes
Proton Conduction of RTMS--Acid System / S. Mitsushima ; K. Kudo ; R. Sakamoto ; A. Noda ; Y. Takeoka ; N. Kamiya ; M. Watanabe ; K. -I. Ota
Investigations of the Electrochemical Behavior of TrialkylImidazolium Bis(trifluoromethylsulfonimide) Ionic Liquids and Their Polymer Gel Electrolytes
Molten Salts in Synthesis, Catalysis, and Green Processes
New, Halogen-Free Ionic Liquids--Synthesis, Properties and Applications / P. Wasserscheid ; R. van Hal ; A. Bosmann
Ionic Liquids for the Dissolution and Regneration of Cellulose / R. P. Swatloski ; J. D. Holbrey ; S. K. Spear ; R. D. Rogers
Green Synthesis of Ionic Liquids and Applications in Organic Synthesis, Structure and Dynamics of Lithium Polymer Electrolytes / R. X. Ren ; A. Brenner ; J. X. Wu ; W. Ou
Clean Synthesis in Ionic liquids / M. J. Earle ; K. R. Seddon
Organic Reactivity in Ionic Liquids: Nucleophilic Substitutions on Methyl p-Nitrobenzeneshlphonate / N. L. Lancaster ; T. Welton ; G. B. Young
Thermal Degradation Studies of Alkyl-Imidazolium Salts and Their Application in Nanocomposites / W. H. Awad ; J. W. Gilman ; M. Nyden ; R. Davis ; R. H. Harris Jr. ; J. H. Callahan ; H. C. Delong
Transition Metal Catalyzed CO/Olefin Co- Polymerization in Room Temperature Ionic Liquids / K. H. Shaughnessy ; M. A. Klingshirn ; G. A. Broker
Catalytic Oxidation and Comparative Kinetics in Room-Temperature Ionic Liquids / M. M. Abu-Omar ; G. S. Owens ; A. Durazo
Bioelectrocatalytic Reactions in Room-Temperature Ionic Liquids / D. L. Compton ; J. A. Laszlo
Solvatochromic Probe Behavior wthin Neat and Cosolvent added Room-Temperature Ionic Liquid Solutions / K. A. Fletcher ; S. Pandey
Ionic Liquids from Biorenewable Resources: Nicotine and Fructose / S. T. Handy ; M. Okello ; C. Egrie ; G. Dickenson
Nonenzymatic Synthesis of Peptides in an Ionic Liquid / V. F. Smith
The oxidation of Alcohols Using Ruthenium Catalysts and Imidazolium Ionic Liquids / V. Farmer
Palladium Catalyzed Suzuki Cross-Coupling Reactions in Ambient-Temperature Ionic Liquids / C. J. Mathews ; P. J. Smith
Room-Temperature Ionic Liquids for Synthesis of Advanced Materials / S. Dai ; C.-Y. Yuan ; B. Lee ; C. Liang ; R. D. Makote ; H. Luo
High Temperature Molten Salts
Molten Salt Oxidation: A Rassessment of its Supposed Catalytic Mechanism and Hence its Development for the Disposal of Waste Automotive Tires / T. R. Griffiths ; V. A. Volkovich ; E. M. Anghel
Molten Salt Electrocatalytical Membrane Cells for Flue Gas Cleaning / S. B. Rasmussen ; K. M. Eriksen ; J. Winnick ; P. Simonsen ; R. Fehrmann
In-Situ Raman Spectroscopic Study of Supported Molten Salt Catalysts During SO[subscript 2] Oxidation / I. Giakoumelou ; R. M. Caraba ; V. Parvulescu ; S. Boghosian
Raman Spectroscopic Measurements and Molecular Dynamic Simulation of Three-Dimensional Anionic Structures of Molten Al[subscript 2]O[subscript 3]-Na[subscript 2]O-SiO[subscript 2] System / Y. Sasaki ; M. Mohri ; K. Ishii
Electrical Conductivity and Transference Number Measurements of FeO - CaO - MgO - SiO[subscript 2] Melts / A. Ducret ; D. Khetpal ; D. R. Sadoway
Lewis Acid-Base Equilibrium Effects on the Volatility of Aluminum and Gallium Trichlorides in Molten NaCl-AlCl[subscript 3]-GaCl[subscript 3] Mixtures and on the Ga/Al Separation Factor / A. B. Salyulev ; A. L. Bovet ; N. I. Moskalenko
Molten Salt electrolysis for the Recycling of Pulping Chemicals / R. Wartena ; P. H. Pfromm
Thermodynamics of the Formation of Gallium Chlorides in the LiCl-KCl-CsCl Eutectic Melt / V. V. Smolensky ; V. S. Mityaev ; N. P. Borodina
Low-Melting Salt Mixtures Data: Errors in Concentration Coordinates / V. I. Lutsyk
A New Model of the Electric Double Layer at Electrodes in Molten Salts / A. Kisza
Towards Elimination of the Anode Effect and Perfluorocarbon Emissions from Hall-Heroult Cells / H. Zhu
Measurement and Modeling of the Alumina Solubility in Cryolite Melts at 1300K / Y. Zhang ; R. A. Rapp
Redox Potential of Novel Electrochemical Buffers Useful for Corrosion Prevention in Molten Fluorides / G. D. Del Cul ; D. F. Williams ; L. M. Toth
Corrosion and Vapor Transport Involving Novel Manganese Oxo-Species: the Characterization of Molecular Cs[subscript 2]MnO[subscript 4] by Mass Spectrometry and Matrix Isolation IR Spectroscopy / B. Farrow ; R. A. Gomme ; J. S. Ogden
Model Structures of Alkali Metal Chloride Melts / V. G. Kremenetsky
Relationship Between Electrical Conductivity and Thermodynamic Properties of Binary Molten Salt Mixtures / A. Redkin
Investigation of the Kinetics of Electrode Processes in Halide Melts Containing Beryllium, Vanadium, Niobium and Hafnium / O. I. Rebrin ; R. Yu. Scherbakov ; I. B. Polovov ; S. M. Mihalev ; A. S. Muhamadeev ; B. D. Vasin
Raman Spectra of Liquid Sulfur Around the Polymerization Transition and in the Glassy State / A. G. Kalampounias ; S. N. Yannopoulos
Raman Spectroscopic Measurements of Molten Ceramic Materials at High Temperature
Spectra and Structure of Pt (II) Complexes in Carbamide and Carbamide-Halide Melts / N. I. Buryak ; T. A. Silinskaya ; N. KH. Tumanova ; S. V. Volkov
Lanthanide, Actinide, and Radioisotope Chemistry in Molten Salts
Investigation of Uranium in Bis(trifluoromethylsulfonyl)imide Based Ionic Liquids / D. A. Costa ; W. J. Oldham ; R. Chavarria
About Possible Use of Low-Temperature Melts for Plutonium Alloy Conversion to Pellet MOX-fuel / A. G. Ossipenko ; V. N. Syuzyov ; V. A. Stupin ; A. V. Bychkov
Actinide Chemistry in Novel Solvent Media: Room-Temperature Ionic Liquids / A. E. Visser
Electrotransport of U and Pu into Liquid Cadmium Cathodes in LiCl-KCl Eutectic Melts / K. Uozumi ; M. Iizuka ; T. Inoue ; O. Shirai ; T. Iwai ; Y. Arai
Anodic Process of Electrorefining Spent Nuclear Fuel in Molten LICl-KCl-UCl[subscript 3]/Cd System / S. X. Li
Actinides Recycle by Pyrometallurgy in Nuclear Fuel Cycle / Y. Sakamura ; K. Kinoshita ; T. Usami ; M. Kurata ; T. Yokoo
Separation of Uranium and Magnesium by Molten Salt Electrorefining / B. Mishra ; I. Maroef ; D. Hebditch
Influence of the First and Second Coordination Spheres on Electrochemical and Thermodynamic Properties in Alkali Chloride Melts / S. A. Kuznetsov ; M. Gaune-Escard
Nano-Materials from Molten Salts: Preparation of Nano-Sized Lanthanide Phosphates from Chloride Melts / R. C. Thied
Mixing Enthalpies of TbBr[subscript 3]-MBr Liquid Mixtures (M=Li, Na, K, Rb, Cs) / L. Rycerz
Infrared Radiation Spectra of Oxyhydryl Groups in MCl (M = Na, K, Cs) and UO[subscript 2]Cl[subscript 2]-CsCl Mixed Melts / A. A. Khokhryakov ; A. M. Khokhlova
Joint Electroreduction of Lanthanum, Gadolinium and Boron in Chloride Melts / H. B. Kushkhov ; M. K. Vindizheva ; A. S. Uzdenova ; Z. A. Zhanikaeva
Hafnium in Molten Salts: Electrochemistry, Chemistry, Electrodeposition / S. V. Kuznetsova
Electrochemical Behavior of Some Lanthanides in Imide Room-Temperature Molten Salt Systems / M. Yamagata ; Y. Katayama ; T. Miura
Electrodeposition in Molten Salts
Electrodeposition of Titanium-Aluminum Alloys in the Lewis Acidic Aluminum Chloride-1-Ethyl-3-Methylimidazolium Chloride Molten Salt / T. Tsuda ; C. L. Hussey ; G. R. Stafford
STM Study of 2D and 3D Phase Formation of Ni and Ni-Al Alloys during Eletrodeposition from a Chloroaluminate Molten Salt / C. A. Zell ; W. Freyland
Electrodeposition of Al-Mg Alloys from Lewis Acidic AlCl[subscript 3]-EMIC-MgCl[subscript 2] Room-Temperature Molten Salts / M. Morimitsu ; N. Tanaka ; M. Matsunaga
The Electrodeposition of Germanium from an Ionic Liquid: a Mini-Review on the Nanoscale Processes / F. Endres
Conductivity and Electrochemistry of Cobalt (II) and Dysprosium Chloride in Zinc Chloride-1-Ethyl-3-Methyl-Imidazolium Chloride Room-Temperature Molten Salt / H. -Y. Hsu ; C. -C. Yang
Construction Principle of Complex Electrochemical Synthesis (ES) Diagrams on the Example of the Ti-B System / G. Kaptay
The Electrochemistry of Tin in the Zinc Chloride- 1-Ethyl-3-Methylimidazolium Chloride Ionic Liquids / J. -F. Huang ; I-W. Sun
High Temperature Oxidation Behavior of TiAl Coated by Al-Cr Alloy in Molten Salt / M. Ueda ; D. Susukida ; S. Konda ; T. Ohtsuka
Preparation of a High-Surface-Area Nickel Electrode in a ZnCl[subscript 2]-NaCl Melt / A. Katagiri ; M. Nakata
Production of Aluminium, Magnesium and Aluminium-Magnesium Alloys by Direct Electrochemical Reduction of Their Solid Oxides / A. Cox ; D. J. Fray
Production of Reactive Metals by Molten Salt Processing / D. L. Olson
Electrowinning of Metallic Lithium from Molten Salts / Y. Sato ; Y. Qin ; Z. Zheng ; T. Kobayashi ; T. Yamamura
Electrorefining of Magnesium in Chloride Melts / T. Takenaka ; S. Isazawa ; Y. Naka ; M. Kawakami
Formation of Metal Fog and Dissolved Metals During Electrodeposition from Molten Salts / G. M. Haarberg
Electrodeposition of Refractory Metals from Molten Salts / E. Boland ; R. Lanam ; A. Shchetkovskiy ; A. Smirnov
Electroless Coating of Non-Conducting Surfaces and Particles with Metallic Titanium in Molten Salts / J. Sytchev ; Zs. H. Gondor
A New Concept of Sponge Titanium Production by Calciothermic Reduction of Titanium Oxide in the Molten CaCl[subscript 2] / R. O. Suzuki ; K. Ono
Investigation of the Mechanism of the Joint Electrodeposition of Dimolibdenate, Ditungstate (Mo[subscript 2]O[subscript 7 superscript 2-], W[subscript 2]O[subscript 7 superscript 2-])-Ions and Carbon Dioxide (CO[subscript 2]) in Sodium Tungstate Melt / L. M. Beroeva ; M. N. Adamokova
Joint Electrodeposition of Molybdenum, Tungsten and Molybdenum-Tungsten Alloys from Oxy-Halide Melts / R. A. Karashaeva
Electrorefining of Aluminum in C[subscript 6]mimCl + AlCl[subscript 3] ionic Liquid At near Room Temperature / V. Kamavaram ; R. G. Reddy
Cathode Bottom Wear During Aluminum Electrolysis / H. A. Oye ; X. Liao ; A. Store ; T. Foosnoes
Study of the Morphology of TiB[subscript 2] Coatings on Molybdenum Substrates Electrodeposited from a NaCl-KCl-K[subscript 2]TiF[subscript 6]-NaF-NaBF[subscript 4] Melt at 700[degree]C / M. F. Souto ; A. Kopf ; R. Krendelsberger ; G. E. Nauer
Electrodeposition of Zinc from Lewis Basic 1-Ethyl-3-Methylimidazolium Bromide-Zinc Bromide Molten Salt / H. Yamamoto ; T. Iwagishi ; K. Koyama ; H. Shirai ; H. Kobayashi
Electrochemical Deposition of Aluminum at Vitreous Carbon in a Room-Temperature Molten Salt / G. T. Cheek
Electrochemistry and Methods for the Electropolishing of Refractory Metals in Low-Temperature Carbamide Containing Melts / S. Kochetova ; L. Bogdanovich ; N. Tumanova
Electrochemistry and Properties of Room-Temperature Molten Salts
Electrochemical Investigations in the Ionic Liquid 1-Butyl-3-Methylimidazolium Hexafluorophosphate / D. L. Boxall ; J. J. O'Dea ; R. A. Osteryoung
Electrochemistry in Ionic Liquids / C. A. Brooks ; A. P. Doherty
Electrochemistry of 1-Butyl-3-Methyl-1H-Imidazolium Tetrafluoroborate Ionic Liquid / L. Xiao ; K. E. Johnson
Electrochemical Studies of the Fries Rearrangement in a Room-Temperature Molten Salt
Electrochemistry of Ta(V) in Lewis Basic TaCl[subscript 5]-EMIC Low Temperature Molten Salts / T. Matsuo
Electrolytic Synthesis of Perfluorotrimethylamine with Alkali Metal Fluroide Contained Carbon Anode / A. Tasaka ; A. Miyasaka ; T. Miyazaki ; H. Takebayashi ; T. Tojo ; K. Momota
Analysis of the Secies in the (CH[subscript 3])[subscript 4]NF - mHF Melt and Electrolysis of its Melt with LiNiO[subscript 2] Coated Ni Anode / Y. Shodai
Electrical Conductivity of Coexisting System Containing Inorganic Powder and Ambient-Temperature Molten Salts / M. Mizuhata ; K. Yaso ; A. Kajinami ; S. Deki
The Molarities of Ionic Liquid Species--Densities are not Boring
NMR Relaxation Studies and Molecular Modeling of 1-butyl-3-methylImidazolium PF[subscript 6] [BMIM PF6] / W. R. Carper ; Z. Meng ; A. Dolle
Coordination Chemistry and Speciation of Metal Complexes in Room-Temperature Ionic Liquids / D. B. Williams
Quantitative Study by Raman Spectroscopy of the Stability of 1-Methyl-3-Butylimidazolium Chloride/AlCl[subscript 3]/EthylAlCl[subscript 2] Mixed Molten Salts in Presence of an Aliphatic Hydrocarbon / B. Gilbert ; S. Dechamps ; H. Olivier
The HNMR Spectra of Molten Asymmetric Pyridinium Salts / D. S. Newman ; D. Y. Chen ; V. A. Oliveira ; A. M. Elias ; M. E. Elias
Alkylimidazolium Fluorohydrogenates Room Temperature Molten Salts / R. Hagiwara ; K. Matsumoto ; Y. Nakamori ; Y. Ito ; H. Matsumoto
Physicochemical Properties of Pyrazolium Based Ionic Liquid 1-Ethyl-2-Methylpyrazolium Tetrafluoroborate / V. Katovic
Conductivities of Room Temperature Molten Salts Containing ZnCl[subscript 2], Measured by a Computerized Direct Current Method
Investigation of Physical Properties for a New Type Molten ZnCl[subscript 2]-DMSO[subscript 2] Electrolytes / M. -F. Shu
High-energy X-ray Diffraction Studies of Alkylimidazolium Fluorohydrogenate Room-Temperature Molten Salts at Spring-8 High-Energy X-ray Diffraction Beamline BL04B2 / S. Kohara ; K. Suzuya
Physical and Electrochemical Properties of Room Temperature Molten Salt Based on Aliphatic Onium Cations and Asymmetric Amide Anion / H. Kageyama ; Y. Miyazaki
Author Index
Subject Index
Max Bredig Award Address
The Simple and the Complex: Revealing the Structure of Molten Salts / G. N. Papatheodorou
Power Applications of Molten Salts
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図書
editors C.L. Claeys ... [et al.] ; sponsoring division: Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2002  xiii, 406 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-20
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図書
editors, R.J. Brodd ... [et al.] ; sponsoring divisions, Battery, Energy Technology, and Physical Electrochemistry
出版情報: Pennington, N.J. : Electrochemical Society, c2002  viii, 422 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-7
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図書
editors, M. Cahay ... [et al.] ; sponsoring divisions, Dielectric Science and Technology, Electronics, and Luminescene an Display Materials
出版情報: Pennington, NJ : Electrochemical Society, Inc., c2002  viii, 218 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-9
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図書
editors, P.J. Timans ... [et al.] ; sponsoring deivisions, Electronics, Dielectric Science and Technology, and High Temperature Materials
出版情報: Pennington, NJ : Electrochemical Society, c2002  xiii, 478 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-11
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図書
editors, G.S. Frankel ... [et al.] ; sponsoring division, Corrosion
出版情報: Pennington, NJ : Electrochemical Society, c2002  xviii, 604 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-13
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editor, L. Mendicino ; sponsoring divisions, Dielectric Science and Technology and Electroncis
出版情報: Pennington, N.J. : Electrochemical Society, c2002  viii, 262 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-15
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目次情報: 続きを見る
Process Emissions Characterization and Treatment / A.:
Emissions Characterization of Advanced CVD Processes and Abatement Performance / V. Vartanian ; B. Goolsby ; C. Reddy ; V. Arunachalam ; L. Mendicino
Effective Management of Process Exhaust from Low-K CVD Processes / S. Carss ; A. Seeley ; J. Van Gompel
Development and Evaluation of the ATMI CDO 865 for Abatement of Low-K Process Effluent / B. Flippo ; R. Vermeulen
Managing Fluorine Emissions at Semiconductor Fabrication Facilities / M. Smylie
Characterization of Plasma-Etched RuO[subscript 2] Substrates / S. Samavedam ; L Mendicino ; J.J. Lee ; T. Guenther ; S. Dakshina-Murthy ; C. Sparks
Evaluation of Ozone Emissions Destruction Units for SACVD Process Tools / C. Nauert ; R. Camacho ; B. Day ; R. Lathrop ; H. Kwong ; J. Fox
Potential Cost of Ownership Reduction for a Nitride Furnace Point of Use Abatement Device / B. Davis ; M. Rossow
Electrochemical Removal of Hydrogen Sulfide from Geothermal Brines / B.G. Ateya ; F.M. AlKharafi
PFC Emissions Reduction / B.:
The Evaluation of Hexafluoro-1,3-Butadiene as an Environmentally Benign Dielectric Etch Chemistry in a Medium Density Etch Chamber / R. Chatterjee ; R. Reif ; T. Sparks
Post-Pump PFC Abatement by Atmospheric Microwave Plasmas: Completion of Metal Etch Beta Test / J.C. Rostaing ; D. Guerin ; C. Larquet ; A. El-Krid ; C.H. Ly ; J. Bruat ; E. Coffre ; M. Moisan ; H. Dulphy ; P. Moine ; J. Wiechers
Characterization of NF[subscript 3] Chamber Cleans on Multiple CVD Platforms / J. Rivers ; J. Vires ; A. Soyemi ; S.P. Sun ; M. Turner ; C. Esber
Reduction of PFC Emissions Through Process Advances in CVD Chamber Cleaning / S. Hsu ; C. Allgood ; M. Mocella
PFC Emissions Reduction and Process Improvements with Remote Plasma CVD Chamber Cleans / P.T. Brown ; S. Filipiak ; H. Estep ; M. Fletcher
Thermal Reductive Destruction of Perfluorocarbons into Safe Products Through In-situ Generation of Alkali Metals in Heated Solid Mixtures / M.C. Lee ; W. Choi
Alternative Cleans Technologies and Emerging Issues / C.:
Post Oxide Etching Cleaning Process Using Integrated Ashing and HF Vapor Process / O. Kwon ; H. Sawin
Fluorocarbon Film and Residue Removal Using Supercritical CO[subscript 2] Mixtures / S. Myneni ; D. Hess
A Summary of Recent Motorola Water Conservation Efforts from Source Reduction of Process Equipment / B. Raley ; T. Dietrich
Partnerships to Address EHS Aspects of Chemical Management in the Semiconductor Industry: Lessons from the PFAS Experience / M. Bowden ; L. Beu ; S. Pawsat
PFAS: Treatment Options and Sampling Methods / K. Barbee ; L. Lovejoy
EHS Risk Assessment and Management / D.:
Concepts and Application of Risk Management of Address Business Needs / S. Trammell ; J. Heironimus
Emergency Preparedness and Response for Semiconductor Manufacturing / S. Harris
Environmental Health and Safety (EHS) Investigation of CVD Exhaust System: Identification and Mitigation of Potential Release of Process Gases and By-products / L. Chandna ; A. Reynoso ; K. Hendricksen
Point of Use Abatement Unit By-Pass for NF[subscript 3]-Based CVD Chamber Clean Applications / D. Babbitt
Process Emissions Characterization and Treatment / A.:
Emissions Characterization of Advanced CVD Processes and Abatement Performance / V. Vartanian ; B. Goolsby ; C. Reddy ; V. Arunachalam ; L. Mendicino
Effective Management of Process Exhaust from Low-K CVD Processes / S. Carss ; A. Seeley ; J. Van Gompel
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editors, M. Cahay ... [et. al] ; sponsoring divisions, Dielectric Science and Technology, Electronics, and Luminescence and Display Materials
出版情報: Pennington, N.J. : Electrochemical Society, c2002  viii, 416 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-18
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目次情報: 続きを見る
Preface
Carbon Nanotubes
Quantum Interference Effects in the Nanotriode / S. Johnson ; A. Blackburn ; A. Driskill-Smith ; D. Hasko ; H. Ahmed
Microgated In-Situ Grown Carbon Nanotube Field Emitter Arrays / D. Hsu ; J. Shaw
A Micromachined On-chip Vacuum Microtriode Using a Carbon Nanotube Cold Cathode / W. Zhu ; L.H. Chen ; C. Bower ; D. Shalom ; D. Lopez
Electron Emission Microscopy Measurements of Nitrogen and Sulfer Doped Carbon Films / F. Koeck ; S. Gupta ; B.R. Weiner ; G. Morell ; J.M. Garguilo ; B. Brown ; R.J. Nemanich
Carbon Nanotubes for Future Field Electron Emission Devices / O. Groning ; R. Clergeraux ; L. Nilsson ; P. Ruffieux ; L. Schlapbach ; P. Groning
Saturated Emmision from Carbon Nanotubes
Fabrication and Characterization of Field Emission Devices Based on Single Vertically Aligned Carbon Nanofibers / M.A. Guillorn ; V.I. Merkulov ; A.V. Melechko ; E.D. Ellis ; L.R. Baylor ; D.K. Hensley ; R.J. Kasica ; T.R. Subich ; D. Lowndes ; M.L. Simpson
Atom-by-atom Analysis of Field Emission Sources by the Scanning Atom Probe / O. Nishikawa ; T. Yagyu ; T. Murakami ; M. Watanabe ; M. Taniguchi ; T. Kuzumaki ; S. Kondo
Field Emitter Arrays
Microfabricated Field Emitter Performance Enhancement by High Current Processing / P.R. Schwoebel ; C.A. Spindt ; C.E. Holland
Study of Emitter Materials for use in Hostile Environments / W.A. Mackie ; C. Dandeneau ; L.A. Southall ; F.M. Charbonnier
Intelligent Silicon Field Emission Arrays / C.Y. Hong ; A.I. Akinwande
Field Emission Array Cathode Material Selection for Compatibility with Electric Propulsion Applications / C.M. Marrese-Reading ; J. Polk ; B. Koel ; M. Quinlan
Field Induced Thickening of Au-coated Nanosize Si-tip and Field Emission from PR-coated Si-tip / S.S. Choi ; M.Y. Jung ; D.W. Kim ; M.S. Joo
Field Emission Study of Ti-Silicide Array / S.B. Kim ; H.T. Jeon
Theory and Simulation
Emissive and Cooling Properties of Carbon Based Materials for Microelectronics / N.M Miskovsky ; P.H. Cutler ; A. Mayer ; P.B. Lerner
Modeling Device Performance and Feature Variation in Microtip Field Emitters / J. Zuber ; K.L. Jensen
Simulations of Transport and Field-Emission Properties of Multi-wall Carbon Nanotubes / N.M. Miskovsky
Equilibrium Theory of Nanotips / G. Bilbro
An Analysis of FEA Noise Mechanisms / M. Cahay
Sub-Poissonian and Super-Poissonian Shot Noise in Planar Cold Cathodes / R. Krishnan
Electrostatic Factors Affecting Emission From Discrete Isolated Diamond Nanodots / D.L. Jaeger ; T. Tyler ; A.K. Kvit ; J.J. Hren ; V.V. Zhirnov
Current Density Evaluation At The Barrier Maximum / P. O'Shea ; D. Feldman
Tunnel Charcateristics of the Metal Tip-Cathodes with the Superthin Diamond Coatings Using Non-Local Considerations / L. Il'chenko ; V. Il'chenko ; R.M. Novosad ; Y.V. Kryuchenko
About Theoretical Calculation of Semiconductor's Surface Images for Closely Spaced Semiconductor and Metal in STM
Thin films and Nanostructures
Emission from GaN p-n Junction Cold Cathodes / R. Treece ; D. Patel ; C. Menoni ; J. Smith ; J. Pankove
Effect of Film Thickness on Low-Energy Electron Transmission in Thin CVD Diamond Films / J. Yater ; A. Shih ; J. Butler ; P. Pehrsson
Growth and Characterization of LaS and NdS Thin Films on Si, GaAs, and InP Substrates / Y. Modukuru ; J. Thachery ; P. Boolchand ; J. Grant
Surface-Emitting Ballistic Cold Cathodes Based on Nanocrystalline Silicon Diodes / N. Koshida ; K. Kojima ; Y. Nakajima ; T. Ichihara ; Y. Watabe ; T. Komoda
Microwave-Tube Experiments Utilizing Ferroelectric Electron-Gun / M. Einat ; E. Jerby ; G. Rosenman
Author Index
Subject Index
Preface
Carbon Nanotubes
Quantum Interference Effects in the Nanotriode / S. Johnson ; A. Blackburn ; A. Driskill-Smith ; D. Hasko ; H. Ahmed
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図書
editors, G.M. Swain ... [et al.] ; sponsoring divisions, Dielectric Science and Technology, High Temperature Materials, and Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2002  ix, 290 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-25
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図書
editors, J. McBeen, D.A. Scherson ; sponsoring division, Physical Electrochemistry
出版情報: Pennington, N.J. : Electrochemical Society, c2002  vii, 196 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-15
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図書
editors, S. Krongelb ... [et al.] ; sponsoring division: Electrodeposition
出版情報: Pennington, N.J. : Electrochemical Society, c2003  xiv, 714 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-27
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editos, M. Seo ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1999  xxiii, 730 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-27
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図書
editors, J.L. Davidson ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2000  xiv, 532 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-32
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図書
editors, R.L. Opila ... [et al.]
出版情報: Pennington, N. J. : Electrochemical Society, c2000  xii, 644 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-37
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図書
editors M. McNallan ... [et al.]
出版情報: Pennington, New Jersey : Electrochemical Society, c2000  xii, 580 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-38
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図書
editors, Fred Roozeboom ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c2000  xii, 462 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-9
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目次情報: 続きを見る
Preface
Conference organization
Ultra-Shallow Junctions for Nanoscale CMOS / Section I:
High Ramp Rate Rapid Thermal Annealing for Ultra-Shallow Junctions / P. Kohli ; H.-J. Li ; S. Ganguly ; T. Kirichenko ; B. Murto ; E. Graetz ; P. Zeitzoff ; M. Pawlik ; P.B. Merrill ; S. Banerjee1.:
New Physics for Modeling Transient Enhanced Diffusion in RTP / M.Y.L. Jung ; R. Gunawan ; R.D. Braatz ; E.G. Seebauer2.:
Optical Effects in Diffusion and Activation Processes During RTA / R.B. Fair3.:
Spike Annealing for Ultra-Shallow Junction Formation / A. Jain4.:
Inherent Radiative Differences between Rapid Thermal and Furnace Annealing: Their Effects on Dopant Diffusion and Activation / P.S.-J. Choi ; D.-L. Kwong5.:
Ultra-Shallow Junction Formation Using Ion Implantation and Rapid Thermal Annealing: Physical and Practical Limits / A. Agarwal ; H.-J.L. Gossmann ; A.T. Fiory ; V.C. Venezia ; D.C. Jacobson6.:
Role of Silicon and Boron Interstitial Clusters in Transient Enhanced Diffusion / N.E.B. Cowern ; G. Mannino ; F. Roozeboom ; J.G.M. van Berkum ; B. Colombeau ; A. Claverie7.:
Ultra-Shallow P[superscript +]-N Junctions for 35-70 nm CMOS using Selectively Deposited Very Heavily Boron-doped Silicon-Germanium Films / S. Gannavaram ; M.C. Ozturk8.:
Selective Epitaxial Si and SiGe for Elevated Source Drain MOSFETs / S.B. Samavedam ; A. Dip ; A.M. Phillips ; J. Smith ; J.M. Grant ; W.J. Taylor ; P.J. Tobin9.:
Laser Thermal Processing (LTP) for Fabrication of Ultra-Shallow, Hyper-Abrupt, Highly Activated Junctions for Deca-Nanometer MOS Transistors / S. Talwar ; Y. Wang ; C. Gelatos10.:
Athermal Annealing of Silicon Implanted with Phosphorus and Arsenic / J. Grun ; R.P. Fischer ; M. Peckerar ; C.L. Felix ; B.C. Covington ; D.W. Donnelly ; B. Boro Djordjevic ; R. Mignogna ; J.R. Meyer ; A. Ting ; C.K. Manka11.:
Exploring Alternative Annealing Methods for Shallow Junction Formation in Ion Implanted Silicon / K.S. Jones ; H. Banisaukis ; S. Earles ; C. Lindfors ; M. Griglione ; M.E. Law ; S.W. Falk ; D.F. Downey12.:
Shallow Junction Challenges to Rapid Thermal Processing / L. Larson13.:
Contacts for Nanoscale CMOS / Section II:
Aspects of Enhanced Titanium Salicide Formation / L. Kappius ; R.T. Tung14.:
Multi-Substrate CoSi[subscript 2] Formation Kinetics in a Low-Pressure, Susceptor-Based RTP Tool / A.J. Atanos ; V. Parihar ; S.-P. Sun15.:
Metal / Silicon Schottky Barrier Lowering by RTCVD Interface Passivation / Q.W. Ren ; W.D. van Noort ; L.K. Nanver ; J.W. Slotboom16.:
Gate Stacks for Nanoscale CMOS / Section III:
Ultrathin CVD Gate Dielectrics for 130 nm Technology Node / V.H.C. Watt ; A. Karamcheti ; T.-Y. Luo ; H.N. Al-Shareef ; M.D. Jackson ; H.R. Huff17.:
High Performance, Highly Reliable Gate Oxide Formed with Rapid Thermal Oxidation In-Situ Steam Generation (ISSG) Technique / Y. Ma ; Y.N. Chen ; M.M. Brown ; F. Li ; Y. Chen ; J. Eng, Jr. ; R.L. Opila ; Y.J. Chabal ; J. Sapjeta ; D.A. Muller ; G.C. Xing ; T. Trowbridge ; M. Khau ; N. Tam18.:
High Reliable In Situ Steam Generation Process for 1.5-2.5 nm Gate Oxides / M. Bidaud ; F. Guyader ; F. Glowacki ; F. Monsieur ; D. Roy ; S. Bruyere ; E. Vincent ; K. Barla19.:
Investigation of In-Situ Steam Generated Oxide (ISSG) followed by Remote Plasma Nitridation (RPN) for Effective Oxide Thickness Decrease and Gate Leakage Reduction / K. Eason ; R. Jallepally ; D. Noble ; S. Mattangady ; R. Khamankar ; A.L.P. Rotondaro20.:
Rapid Thermal Processing Using Steam / R. Sharangpani ; J.H. Das ; S.-P. Tay21.:
Corona-Charge Evaluation of Thermal SiO[subscript 2] Growth by Single-Wafer and Batch Methods / A. Fiory ; J. Zhang ; P. Frisella ; J. Hebb22.:
Growth of Ultrathin Nitride on Si(100) by Rapid Thermal N[subscript 2] Treatment / Z.H. Lu ; A. Khoueir ; W. T. Ng23.:
Gate Dielectrics Formed by Remote Plasma Nitridation of Ultrathin In-Situ Steam Generated (ISSG) Oxides / T.Y. Luo ; G.A. Brown ; M. Laughery ; K. Torres ; K. Ahmed ; R. Jallepally|cD. Noble ; G. Miner24.:
In-situ Rapid Thermal N[subscript 2]O Oxidation of NH[subscript 3]-Nitrided Si for Ultrathin Nitride/Oxide Stack Gate Formation / Y.H. Kim ; S.C. Song ; H.F. Luan ; J.C. Gelpey ; A. Kepton ; S. Levy ; R. Bloom25.:
Processing and Characterization of RTCVD Silicon Nitride and Oxynitride Grown in a Single-Wafer RT Cluster Tool / C.P. D'Emic ; E.P. Gusev ; J. Newbury ; P. Kozlowski ; K. Chan ; T. Zabel ; P. Varekamp26.:
Integrated Rapid Thermal CVD Oxynitride Gate Dielectric for Advanced CMOS Technology / H.-H. Tseng27.:
Ultrathin (EOT [ 7 A) Ta[subscript 2]O[subscript 5] Gate Stacks Prepared by an In-Situ RT-MOCVD Process / S.J. Lee ; C.H. Lee ; Y. Senzaki ; D. Roberts28.:
High-k Oxides by Atomic Layer Chemical Vapour Deposition / M. Tuominen ; T. Kanniainen ; S. Haukka29.:
Electrical and Chemical Properties of Ultrathin RT-MOCVD Grown Ti-Doped Ta[subscript 2]O[subscript 5] / A. Mao ; T.S. Jeon ; R. Vrtis30.:
Electrical and Material Properties of Metal Silicate Dielectrics and Metal Gates for Advanced CMOS Devices / V. Misra ; M. Kulkarni ; G. Heuss ; H. Zhong ; H. Lazar31.:
RTCVD Polysilicon Grain Dimension Control / D. O'Meara ; J. Conner ; M. Rossow ; T. Neil ; V. Wang ; C.-L. Chang32.:
New Applications of RTP / Section IV:
Mechanisms and Applications of the Control of Dopant Profiles in Silicon Using Si[subscript 1-x-y] Ge[subscript x]C[subscript y] Layers Grown by RTCVD / J.C. Sturm ; M.S. Carroll ; M. Yang ; J. Gray ; E. Stewart33.:
High Performance Buried Silicon-Germanium Channel PMOST Fabricated Using Rapid Thermal Processing and Shallow Trench Isolation / D.J. Tweet ; S.T. Hsu ; D.R. Evans ; B. Ulrich ; Y. Ono ; L. Stecker34.:
Kinetic Study of In-Situ Copper Oxidation and Reduction Using Rapid Thermal Processing and Its Applications in ULSI / Y.Z. Hu35.:
Development of an RTA Process for the Enhanced Crystallization of Amorphous Silicon Thin Films / Y.-G. Yoon ; T.-K. Kim ; K.-B. Kim ; J.-Y. Choi ; B.-I. Lee ; S.-K. Joo36.:
Advances in RTP Systems and Process Monitoring / Section V:
Optimization of Support Temperature in RTA-Tools by Scanning Infrared Depolarization Imaging of Monitor Wafers / H.-D. Geiler ; H. Karge ; B. Krimbacher37.:
Wafer Temperature Characterization During Low-Temperature Annealing / W.S. Yoo ; T. Fukada38.:
Determining the Uncertainty of Wafer Temperature Measurements Induced by Variations in the Optical Properties of Common Semiconductor Materials / B. Adams ; A. Hunter ; M. Yam ; B. Peuse39.:
Low-Temperature Measurements and Monitors for Rapid Thermal Processing / P.J. Timans ; N. Acharya ; I. Amarilio40.:
In Situ Selectivity and Thickness Monitoring based on Quadrupole Mass Spectroscopy during Selective Silicon Epitaxy / E.A. Rying ; G.L. Bilbro ; J.C. Lu41.:
Optimization and Control of Gas Flows in an RTCVD Reactor / Y. Rainova ; K. Antonenko ; A. Barchotkin ; J. Pezoldt42.:
LEVITOR 4000: An Advanced RTP System Based on Conductive Heat Transfer / V.I. Kuznetsov ; A.B. Storm ; G.J. Snijders ; C. de Ridder ; T.A.M. Ruijl ; J.C.G. van der Sanden ; E.H.A. Granneman43.:
Ultra-Shallow Junction Formation of BF[subscript 2 superscript +] Implants Using a Low-Pressure, Hot-Wall Rapid Thermal Anneal / K. Reddy ; J.-F. Daviet44.:
Temperature Gradient Rapid Thermal Processor / J.-M. Dilhac ; C. Ganibal45.:
Spike Thermal Processing Using Arc-Lamps / D.M. Camm ; M.E. Lefrancois46.:
Novel High Ramp-Down Rate and Reflector Design in Rapid Thermal Processing / M.H. Lee ; C.W. Liu47.:
Improved Performance of a Fast-Ramp RTA System through Recipe and Controller Optimization / S. Ramamurthy ; A. Mayur ; D. de Roover ; J.L. Ebert48.:
Author Index and Key Word Index / Section VI:
Author Index
Key Word Index
Preface
Conference organization
Ultra-Shallow Junctions for Nanoscale CMOS / Section I:
88.

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図書
editor, L. Mendicino ; [jointly sponsored by the Dielectric Science and Technology Division]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  vii, 212 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-6
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89.

図書

図書
editors, Sorin Cristoloveanu ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  x, 464 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-3
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90.

図書

図書
editors, C.L. Claeys ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001-2005  3 v. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-2, 2003-6, 2005-06
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目次情報: 続きを見る
Preface
Electronics Division Award Address
Radical Reaction Based Semiconductor Manufacturing for Very Advanced ULSI Process Integration / T. Ohmi
Keynote Papers
From Ambient Intelligence to Silicon Process Technology / C.J. van der Poel
From the Lab to the Fab: Transistors to Integrated Circuits / H. R. Huff
Diffused Silicon Transistors and Switches (1954-1955): The Beginning of Integrated Circuit Technology / N. Holonyak Jr.
Current Status and Future Prospects in Mixed Signal SOC / A. Matsuzawa
Process Integration for Memory Devices
DRAM Technology for 100nm and Beyond / K.H. Kusters ; J. Alsmeier ; J. Faul ; J. Lutzen ; T. Zell
Logic Based Embedded DRAM Technologies / C. Mallardeau
Flash Memory Technology Evolution / R. Bez ; E. Camerlenghi
FeRAM Technology: Today and Future / I. Kunishima ; N. Nagel
Effects of Nitridation Treatment for Electrochemical Properties of MONOS Non-Volatile Memories / H. Aozasa ; I. Fujiwara ; K. Nomoto ; H. Komatsu ; T. Kobayashi
The Crystallization Behavior and Interfacial Reaction of Ge[subscript 2]Sb[subscript 2]Te[subscript 5] Thin Films Between Dielectric Material for the Application to the Phase Change Memory / E.J. Jung ; S.K. Kang ; B.G. Min ; D.H. Ko
Full Process Integration Aspects
Single-Wafer Technology in a 300-mm Wafer Fab / S. Ikeda ; K. Nemoto ; M. Funabashi
The Impact of Single Wafer Processing on Process Integration / R. Singh ; M. Fakhruddin ; K.F. Poole
Advanced Multilevel Interconnects Technologies for 40-nm Lg Devices / T. Ohba
Performance Limitations of Metal Interconnects and Possible Alternatives / K.C. Saraswat ; P. Kapur ; S. Souri
Plasma Technologies for Low-k Dry Etching / T. Tatsumi
A Novel Approach to Contact Integration at 90-nm and Beyond / A. Singhal ; T. Sparks ; K. Strozewski ; F. Huang ; S. Parihar ; J. Schmidt ; B. Boeck ; J. Fretwell ; G. Yeap ; V. Sheth ; S. Veeraghavan ; B. Melnick
SiGe Process Integration
BiCMOS Integration of High-Speed SiGe:C HBTs / H. Rucker ; B. Heinemann ; R. Barth ; D. Knoll ; D. Schmidt ; W. Winkler
Applications of Silicon Germanium Electrodes in ULSI / E.-X. Ping ; E. Blomiley ; F. Gonzalez
Noise Properties and Hetero-Interface Traps in SiGe-Channel PMOSFETs / T. Tsuchiya ; J. Murota
Ultra-Shallow Junction Formation by Low Energy Ion Implantation and Flash Lamp Annealing / K. Suguro ; T. Ito ; T. Itani ; T. Iinuma
Integration Aspects for Emerging Technologies
Single and Few Electron Devices. Integration Trends / J. Gautier
Achieving Low Junction Capacitance on Bulk Si MOSFET Using SDOI Process / Z. Wang ; T. Abbott ; J. Trivedi ; C.-C. Cho ; M. Violette
Differential Silicide Thickness for ULSI Scaling / W.J. Taylor Jr. ; J. Smith ; J.-Y. Nguyen ; R. Rai ; O. Adetutu ; J. Geren ; J. Ybarra ; D. Petru
High-Voltage CMOS and Scaling Trends / H. Ballan
Emerging Device Solutions for the Post-Classical CMOS Era / K. De Meyer ; N. Collaert ; S. Kubicek ; A. Kottontharayil ; H. van Meer ; P. Verheyen
Modeling End-of-the-Roadmap Transistors / A. Asenov ; A.R. Brown ; J.R. Watling
Thin Film Transistors in ULSI--Status and Future / Y. Kuo
Extending Planar Single-Gate CMOS & Accelerating the Realization of Double-Gate/Multi-Gate CMOS Devices / J.O. Borland ; H. Iwai ; W. Maszara ; H. Wang
Surface Preparation and Gate Module
Cleaning for Sub 0.1 [mu]m Technology: A Particular Challenge / D.M. Knotter
Si Channel Surface Dependence of Electrical Characteristics in Ultra-Thin Gate Oxide CMOS / H.S. Momose
Integration Issues with High k Gate Stacks / C.M. Osburn ; S.K. Han ; I. Kim ; S.A. Campbell ; E. Garfunkel ; T. Gustafson ; J. Hauser ; T.-J. King ; Q. Liu ; P. Ranade ; A. Kingon ; D.-L. Kwong ; S.J. Lee ; C.H. Lee ; J. Lee ; K. Onishi ; C.S. Kang ; R. Choi ; H. Cho|cR. Nich ; G. Lucovsky ; J.G. Hong ; T.P. Ma ; W. Zhu ; Z. Luo ; J.P. Maria ; D. Wicaksana ; V. Misra ; J.J. Lee ; Y.S. Suh ; G. Parksons ; D. Niu ; S. Stemmer
Compatibility of Polysilicon with HfO[subscript 2]-based Gate Dielectrics for CMOS Applications / V. Kaushik ; S. De Gendt ; M. Caymax ; E. Young ; E. Rohr ; S. Van Elshocht ; A. Delabie ; M. Claes ; X. Shi ; J. Chen ; R. Carter ; T. Conard ; W. Vandervorst ; M. Schaekers ; M. Heyns
Analysis of CMOS Gate-To-Drain Leakage Current and Proposition of a New Cobalt Salicide Selective Etch Chemistry for High DRAM Yield / B. Froment ; C. Regnier ; M.-T. Basso
Electrical Characteristics and Thermal Stability of W[subscript 2]N/Ta[subscript 2]O[subscript 5]/Si MOS Capacitors in N[subscript 2]:H[subscript 2] or H[subscript 2] Ambients / P.C. Jiang ; J.S. Chen
Sub-Quarter Micron PMOSFET DC and AC NBTI Degradation / E. Li ; S. Prasad ; S. Park ; J. Walker
Process Integration in Integrated Circuit Applications
Physical Analysis and Modeling of Plasma Etching Mechanism for ULSI Application / M. Kanoh ; S. Onoue ; K. Nishitani ; T. Shinmura ; K. Iyanagi ; S. Kinoshita ; S. Takagi
Process Strategy for Built-in Reliability of Cu Damascene Interconnect System for 0.13um-Node and Beyond / H. Yamaguchi ; T. Oshima ; J. Noguchi ; K. Ishikawa ; H. Aoki ; T. Saito ; T. Furusawa ; K. Hinode
Impact of Wafer Backside Cu Contamination to 0.18 um Node Devices / S.Q. Gu ; L. Duong ; J. Elmer
Integrated Multiscale Process Simulation of Damescene Structures / M.O. Bloomfield ; Y.H. Im ; J. Seok ; C.P. Sukam ; J.A. Tichy ; T.S. Cale
An Analysis of the Effect of the Steps for Isolation Formation on STI Process Integration / A. Pavan ; D. Brazzelli ; M. Aiello ; C. Capolupo ; C. Clementi ; C. Cremonesi ; A. Ghetti
Defect Generation and Suppression in Device Processes Using a Shallow Trench Isolation Scheme / D. Peschiarolli ; M. Brambilla ; G.P. Carnevale ; A. Cascella ; F. Cazzaniga ; c. Clementi ; A. Gilardini ; M. Martinelli ; A. Maurelli ; I. Mica ; G. Pavia ; F. Piazza ; M.L. Polignano ; V. Soncini ; E. Bonera
Electrodeposition of Low-Dimensional Phases on Au Studied by EQCM and XRD / C. Shannon
Silicon-on-Insulator
60-nm Gate Length SOI CMOS Technology Optimized for "System-on-a-SOI-Chip" Solution / K. Imai ; S. Maruyama ; T. Suzuki ; T. Kudo ; S. Miyake ; M. Ikeda ; T. Abe ; S. Masuda ; A. Tanabe ; J.-W. Lee ; K. Shibahara ; S. Yokoyama ; H. Ooka
Emerging Silicon-On-Nothing (SON) Devices Technology / T. Skotnicki ; S. Monfray ; C. Frenouillet-Beranger
High Performance Strained-SOI CMOSFETs / S.-I. Takagi ; T. Mizuno ; T. Tezuka ; N. Sugiyama ; T. Numata ; K. Usuda ; Y. Moriyama ; S. Nakaharai ; J. Koga ; T. Maeda
Extremely Scaled Ultra-Thin Body and FinFET CMOS Devices / S. Balasubramanion ; L. Chang ; Y.-K. Choi ; D. Ha ; S. Xiong ; J. Bokor ; C. Hu
Fully Depleted SOI Process and Device Technology for Digital and RF Applications / F. Ichikawa ; Y. Nagatomo ; Y. Katakura ; S. Itoh ; H. Matsuhashi ; N. Hirashita ; S. Baba
Status and Future Development of PDSOI MOSFETs / S. Krishnan
Multi-fin Double Gate MOSFET Fabricated by Using (110)-Oriented SOI Wafers and Orientation dependent Etching / Y.X. Liu ; K. Ishii ; T. Tsutsumi ; M. Masahara ; H. Takashima ; E. Suzuki
Optimization of Ultra-Thin Body, Fully-Depleted-SOI Device, with Raised Source/Drain or Raised Extension / J.L. Egley ; A. Vandooren ; B. Winstead ; E. Verret ; B. White ; B.-Y. Nguyen
Partially Depleted SOI Dynamic Threshold MOSFET for Low-Voltage and Microwave Applications / M. Dehan ; D. Vanhoenacker-Janvier ; J.-P. Raskin
New Characterization Techniques for SOI and Related Devices / S. Okhonin ; M. Nagoga ; P. Fazan
Authors Index
Subject Index
Preface
Electronics Division Award Address
Radical Reaction Based Semiconductor Manufacturing for Very Advanced ULSI Process Integration / T. Ohmi
91.

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図書
editors, F. Ren ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  ix, 318 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-1
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図書
editors, E.D. Wachsman ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  x, 530 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-32
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目次情報: 続きを見る
Cation Transport in Solids
Lithium Ion Polymer Batteries / B. Scrosati
Negative Electrode Strategies for Lithium Systems / R. Huggins
Relationship between Structure and Electrochemistry in Disordered LiCoO[subscript 2] Cathode Materials / C. Julien
Nano-Dispersed Li-Storage Alloys as Anode Materials for Li-Ion-Cells / J. Besenhard ; M. Wachtler ; M. Wagner ; M. Winter
Electrochromism by Polarisation of Ionic and Mixed Conducting Solids / W. Chu ; A. Foteinopoulou ; M. Klingler ; S. Stramare ; K. Thoma ; W. Weppner
Frequency Dispersion of the Ionic Conductivity of RbAg[subscript 4]I[subscript 5] at Low Temperatures / E. Buchareski ; R. Potzschke ; W. Lorenz ; W. Wiesbeck ; G. Staikov
Distribution of Activation Energies Treatment of Fast Ion Motions in Glass / S. Martin ; F. Borsa ; I. Svare
Preliminary Investigations on the Influence of a Glassy Phase on Ionic Conduction of Beta-Alumina / J. Tulliani ; L. Dessemond ; L. Montanaro ; P. Fabry
On Electrochemical Decomposition of the Solid Electrolyte RbCu[subscript 4]CI[subscript 3]I[subscript 2] / G. Ostapenko
Kinetics of Electrode Process at C/RbCu[subscript 4]CI[subscript 3]I[subscript 2] Interface
Proton Transport in Solids
Ionic Devices Using Proton Conducting Ceramics / H. Iwahara
Ionic Conduction in Sintered Barium Carbonate at High Temperature / N. Oishi
Synthesis and Characterization of Two-Phase Mixed Ionic Electronic Conducting Membranes for Hydrogen Separation / B. Krishnamurty ; K. Choi ; E. Wachsman
Protonic-Electronic Conducting Barium Cerate Membranes for Hydrogen Separation / J. Rhodes
A New Nanocomposite Model for Hydrous RuO[subscript 2] / K. Swider-Lyons ; K. Bussmann ; D. Griscom ; C. Love ; D. Rolison ; W. Dmowski ; T. Egami
Anion Transport in Solids
Impedance Studies of Oxygen Exchange on a Highly Oriented Thin Film Electrode of La[subscript 0.5]Sr[subscript 0.5]CoO[subscript 3-[delta] / Y. Yang ; C. Chen ; G. Luo ; D. Ross ; C. Chu ; A. Jacobson
Transport and Permeation Properties of La[subscript 2]NiO[subscript 4+[delta] / R. Tichy ; K. Huang ; J. Goodenough
A Computational Investigation of Migration Enthalpies and Electronic Structure in SrFeO[subscript 3-[delta] / A. Predith ; G. Ceder
Mixed Conductivity in Nanocrystalline Undoped and Doped Cerium Oxide / T. Suzuki ; I. Kosacki ; H. Anderson
Synthesis of Ion Conducting Solids
From Molecules to Ceramics: Can We Monitor the Process? / S. Licoccia ; M. Di Vona
Synthesis and Characterization of Novel Ionoconductor Gels for Biomedical Applications in Space / P. Romagnoli ; L. Narici ; W. Sannita ; E. Traversa
Preparation of Y[subscript 2]O[subscript 3]ZrO[subscript 3] Nanoparticles by Gas-Phase Reaction and Wet Doping / B. Xia ; Y. Xie ; K. Okuyama
Solid State Fuel Cells
Increasing Power Density of Solid Oxide Fuel Cells Based on Thick-Film LSGM Electrolyte / J. Wan
The Influence of Electrode Configuration on the Performance of Electrode-Supported Solid Oxide Fuel Cells / B. Chung ; A. Pham ; J. Haslam ; R. Glass
Anode Microstructure Optimization for Solid Oxide Fuel Cells
Natural-Gas-Assisted Steam Electrolyzer for Distributed Hydrogen Production / H. Wallman
Solid State Sensors-Multicomponent Response
Sensing of Multicomponent Gases by Advanced Potentiometric and Kinetic Principles / E. Tsagarakis ; T. Metzing
Study of the Response of O[subscript 2] Sensors Based on ZrO[subscript 2]
Selective Detection of NO[subscript x] by Differential Electrode Equilibria / P. Jayaweera
Modeling the Response of Mixed Potential Electrochemical Sensors / F. Garzon ; R. Mukundan ; E. Brosha
Zironia-Based Mixed Potential CO/HC Sensors with LaMnO[subscript 3] and Tb-Doped YSZ Electrodes / D. Brown ; J. Visser ; D. Thompson ; D. Schonberg ; E. Logothetis
Hydrocarbon Sensors for Exhaust Gas Monitoring / S. Ejakov
Solid State Sensors-Alkaline Electrolyte/Electrode
Solid-State CO[subscript 2] Sensor with Lithium Ion Conductor and Li-Transition Metal Complex Oxide as Solid Reference Electrode / Y. Zhang ; M. Kaneko ; K. Uchida ; J. Mizusaki ; H. Tagawa
Determination of the Hole Conductivity of Sodium-Beta-Alumina by Potentiometric Measurements / H. Nafe ; S. Gollhofer ; F. Aldinger
Experimental Observations of a Thoria Oxygen Sensor in a Molten Salt System / S. Li ; S. Herrmann ; G. Knighton
Solid Electrolyte Sensors for NO[subscript 2] Detection Without Using a Reference Atmosphere / M. Grilli ; E. Di Bartolomeo ; H. Aono ; Y. Sadaoka ; E. Billi
Two Case Studies of Thick Film Sensing Devices: Some Critical Steps in the Processing of Screen Printed Sensors
Development of a Screen-Printed Planar Sensor for Environmental Monitoring / N. Kaabbuathong
Solid State Sensors-Nano to Meso Electrode Structures
Automotive Pollution Monitoring by an Array of Thick Film Gas Sensors from Nanosized Semiconducting Oxides / M. Carotta ; L. Crema ; G. Martinelli
Investigations Into Catalytic Properties of Nanostructured Surfaces Using In-Situ Drifts / X. Lu ; P. Faguy ; C. Xia ; M. Liu
Fabrication of a Highly Selective Sensor Using a Zeolite Semi-Permeable Membrane / W. Rauch ; G. Hunter
Mesoporous SnO[subscript 2] for CO[subscript 2] Sensors / F. Chen
NO[subscript x] Sensors Based on Interfacing Nano-Sized LaFeO[subscript 3] Perovskite-Type Oxide and Ionic Conductors / J. Yoon
Solid State Sensors-Novel
Field Effect Transistor Type Gas Sensor Coated with NaNO[subscript 2] for NO[subscript 2] Detection / K. Shimanoe ; S. Nakata ; N. Miura ; N. Yamazoe
Metal Oxide Stabilized Palladium Sensor for Hydrogen Detection / P. Liu ; S. Lee ; C. Tracy ; J. Pitts ; R. Smith
Solid State Sensors-Semiconducting
Solid State Chemical Sensors for CO / A. Azad
Surface Characterization of La[subscript 2]CuO[subscript 4]-CuO Composite Treated with H[subscript 2]S at PPM Level
Temperature Independent Resistance Response for Mixed Conducting SrFe[subscript y]Co[subscript z]O[subscript x] Thin Films / J. Tunney ; M. Post ; X. Du ; D. Yang
Gas Sensing Properties of Titanium Doped MoO[subscript 3] Thin Films Deposited by Reactive Sputtering / E. Comini ; G. Sberveglieri ; L. Casarotto ; M. Ferroni ; V. Guidi
Ti-W-O and Mo-W-O Thin Films Deposited by Reactive Sputtering as Gas Sensors / G. Benussi
Role of Transition Metal Oxides in the Development of Voltage Sensing Characteristics in Zinc Oxide Ceramics / A. Banerjee ; G. Banerjee ; T. Ramamohon ; M. Patni
Non-Ohmic Current-Voltage and Impedance Characteristics of Electroadsorptive Zn[subscript 2]SnO[subscript 4] / J. Yu ; G. Choi
Cation Transport in Solids
Lithium Ion Polymer Batteries / B. Scrosati
Negative Electrode Strategies for Lithium Systems / R. Huggins
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図書
editors, S. Krongelb ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  xiii, 618 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-29
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94.

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図書
editors, M. Cahay ... [et. al] ; [sponsored by] Dielectric Science and Technology, Electronics, and Luminescence and Display Materials Divisions [of the Electrochemical Society]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  viii, 280 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-28
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目次情報: 続きを見る
Preface
Field Emitter Arrays
Tip Self-Heating to Enhance Microfabricated Cold Cathode Operation Lifetime / P.R. Schwoebel ; C.A. Spindt ; C.E. Holland ; J.A. Panitz
Laser Assisted Fabrication of Single Crystalline Tungsten Rods for use as Field Emitting Cathodes / K. Larsson Bjorklund ; C. Ribbing ; H. Norde ; M. Boman
Theory of H Induced Enhancement of Field Emission from and O Covered Mo(110) Surface / P. von Allmen ; R. Ramprasad ; L.R.C. Fonseca ; P. Ordejon
Process Simulation of a Silicon Field Electron Emitter with Integrated Double-gated Beam Focusing Lens / G. Oleszek ; M. Rodriquez
Carbon Nanotubes
Carbon Nanotube Cold Cathodes Fabrication and Properties / C. Bower ; W. Zhu
Calculating the Field Emission Current from a Carbon Nanotube
Scanning Anode Field Emission Microscopy on Carbon Nanotube Thin Film Emitters / L.O. Nilsson ; O. Groenig ; P. Groenig ; L. Schlapbach
Template Based Carbon Nanotubes as A Field Emitter / S.-H. Jeong ; H.-Y. Hwang ; K.-H. Lee ; W.-K. Cho ; K.-Y. Kim ; H.-S. Jeong
Field Emission Cathode from Aligned Arrays of Carbon Nanotubes / A. Govyadinov ; P. Mardilovich ; D. Routkevich
Electron Emission Cooling
Cooling by Field Emission into the Vacuum with Resonant Tunneling: Design Parameters / R. Tsu
New Results on Microelectronic Cooling Using the Inverse Nottingham Effect: Low Temperature Operation and Efficiency / P.H Cutler ; N.M. Miskovsky ; N. Kumar ; M.S. Chung
Theory and Simulation
The Semiconductor Statistical Hyperbolic-Ellipsoidal Model For Evaluation of Current From Microstructures / K.L. Jensen
Non Equilibrium Field Emission from Wide Bandgap Semiconductors / G.L. Bilbro
Onset of Current Self-Quenching in an InP/CdS/LaS Cold Cathode / Y. Modukuru ; M. Cahay ; P.D. Mumford
Negative Electron Affinity/ Low Electron Affinity
Novel Electron Sources / V.T. Binh ; V. Semet ; J.P. Dupin
Effect of Surface Properties on Electron Energy Distribution from C(111) and C(100) Surfaces / J. Yater ; A. Shih
Synthesis and Work Function Measurement of LaS and NdS Bulk Samples / J. Thachery ; H. Tang ; P. Boolchand
Carbons, Diamond, and a-Silicon
Electron Emission from Carbon Films / R.J. Nemanich ; F.A.M. Kock ; J.M. Garguilo
Fabrication and Characterization of Cathodoluminescent Devices made Using Porous Silicon as a Cold-Cathode Field Emitter / D. Heyde Elqaq ; M.-A. Hasan
Monolithic Thin Film Edge Emission Diodes / H.R. Kim ; L. Karpov ; V. Bhatia ; M. Weichold
Electron Emission Characteristics of Diamond / B. Pate
Conditioning of Amorphous Cathodes via Current Stressing / S.R.P. Silva ; J.D. Carey ; C.H. Poa ; J.M. Shannon
Field Emission Display Development at Motorola / A.A Talin ; B.F.Coll. Yi Wei ; K.A. Dean ; J.E. Jaskie
Rehybridization of Atomic Orbitals and Field Emission Properties of Nanostructured Graphite-like Materials / A.N. Obraztsov ; A.P. Volkov ; A.I. Boronin ; S.V. Kosheev
Author Index
Subject Index
Preface
Field Emitter Arrays
Tip Self-Heating to Enhance Microfabricated Cold Cathode Operation Lifetime / P.R. Schwoebel ; C.A. Spindt ; C.E. Holland ; J.A. Panitz
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図書
editor, G.S. Mathad ; assistant editors, H.S. Rathore ... [et al.] ; [cosponsored by] Dielectric Science & Technology, Electronics, and Electrodeposition Divisions [of the Electrochemical Society]
出版情報: Pennington, N.J. : Electrochemical Society, c2001-2003  2 v. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-27, 2003-10
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目次情報: 続きを見る
Preface
Copper Deposition
Relation of Contact Resistance Reduction and Process Parameters of Bonded Copper Interconnects in Three-Dimensional Integration Technology / K.N. Chen ; A. Fan ; C.S. Tan ; R. Reif
ECD Seed Copper Layer for Seed Enhancement in Advanced Interconnects / P.H. Haumesser ; S. Da Silva ; M. Cordeau ; X. Avale ; O. Pollet ; T. Mourier ; G. Passemard ; R. Baskaran ; T. Ritzdorf
Ultra-thin Tungsten CVD Nucleation Layer for Sub-100 nm Contact Applications / J. Gupta ; J. Sudijono ; L.C. Hsia ; S. Singh
Three-Dimensional Simulation of Superconformal Copper Deposition Based on the Curvature-Enhanced Acceletator Coverage Mechanism / E. Bar ; J. Lorenz ; H. Ryssel
Copper Electrodeposition of High Aspect Ratio Vias for Three-Dimensional Packaging / K. Kondo ; T. Yonezawa ; M. Tomisaka ; H. Yonemura ; M. Hoshino ; Y. Taguchi ; K. Takahashi
Copper Electroplating Process with Improved Stability, Conductivity and Total. Cost of Ownership / R. Preisser ; T. Dretschkow ; H. Fuerhaupter
Electroplating of Copper-Tin Alloys / R. Chebiam ; C-C. Cheng ; H. Simka ; A. Budrevich ; V. Dubin
Interactions between the Conditions of Copper Electrodeposition and the Density of Hillocks / S. Petitdidier ; M. Gregoire ; S. Segaud ; S. Courtas ; M. Juhel ; J.P. Jacquemin ; L. Dumas
Detection of Accelerator Breakdown Products in Copper Plating Baths / M. Pavlov ; E. Shalyt ; P. Bratin ; D.M. Tench
Copper Nucleation on Platinum in the Presence of Additives in Acid Copper Solution / J. Han ; M. King ; M. Stawasz ; T. Baum
An in-situ FTIR Study on Palladium Displacement Reaction for Autocatalytic Electroless Copper Deposition / Y-J. Oh ; C-H. Chung
New Additives for Super-Conformal Electroplating of Ag Thin Film for ULSI / J.J. Kim ; E.J. Ahn ; J.M. Seo
The Role of Chloride Ion in Copper Electrodeposition from Acidic Baths Containing Cl[superscript -], PEG, and SPS / M. Tan ; J.N. Harb
The Influence of 2,2'-Dipyridyl on Non-Formaldehyde Electroless Copper Plating / J. Li ; H. Hayden ; P.A. Kohl
Influence of the Anode in the Damascene Process Investigated by Electro-Chemical Impedance Spectroscopy / C. Gabrielli ; P. Mocotrguy ; H. Perrot ; A. Zdunek ; D. Nieto-Sanz ; M.C. Clech
Investigation of Copper Bath Ageing in the Damascene Process by Electro-chemical Impedance Spectroscopy / P. Mocoteguy
Barrier Films
The Proposal of All-Wet Fabrication Process for ULSI Interconnects Technologies--Application of Electroless NiB Deposition to Capping and Barrier Layers / M. Yoshino ; Y. Nonaka ; T. Yokoshima ; T. Osaka
Thickness Effect on the Diffusion Barrier Properties of ZrN in Cu/ZrN/Si Systems / C-S. Chen ; C-P. Liu ; H-G. Yang ; C-Y. A. Tsao
Characterization of Electroless Plated CoWB Barrier Films / V. Mathew ; R. Chatterjee ; S. Garcia ; L. Svedberg ; Z-X. Jiang ; R. Gregory ; K-H. Lie ; K. Yu
Effect of Ta[subscript 2]N Crystallinity on Diffusion Barrier Properties / H-C. Chung
Use of Ti[subscript x]TiN as Cap Layer for the Formation of Cobalt Silicide / M. Vulpio ; D. Fazio ; M. Bileci ; D. Mello ; C. Gerardi
Ruthenium-Based Copper Diffusion Barrier: Studied by Electrochemistry, SIMS Depth Profiling, and Sheet Resistance Measurements / O. Chyan ; R. Chan ; T. Arunagiri ; R.M. Wallace ; M.J. Kim ; T. Hurd
Low-k Inter Level Dielectric Films and CMP
A Novel Approach for Dual Damascene Trench Etch for 90 nm Low-k Inter-Connect with No Middle Etch Stop Layer / T.Q. Chen ; H. Cong ; W.P. Liu ; Y.K. Siew ; Y. Pradeep ; R. Jaiswal ; A. Jain ; I. Sim
Electrical and Mechanical Properties of Nitrogen and Fluorine Incorporated Organosilicate Glass Prepared by Plasma Enhanced Chemical Vapor Deposition / S-K. JangJian ; W-S. Hwang ; S-W. Chen ; K-H. Wei ; Y-L. Wang
Development of Spin-on Dielectric (SiLK) Etch Process for 0.13 [mu] Cu-Low k Interconnects Technology / B. Ramana Murthy ; Y.W. Chen ; X.T. Chen
The Pore Structure, Property, and Performance of a Spin-on Porous Low-k Dielectric / Y. Liu ; B. Foran ; D. Gidley ; W-L. Wu ; H. Shirataki ; H. Hanahata
Evaluation of Low-k Porous Silica Film Incorporated with Ethylene Groups / Y. Uchida ; M. Oikawa ; Y. Itoh ; K. Ishida
Strip Process Optimization for Porous ULK Films / I.J. Kalinowski ; C. Bourlot ; A. Marfoure ; O. Louveau ; S. Li ; J. Su ; G.W. Hills ; D. Louis
Characterization of Plasma Strip Processes on OSG Low-k Dielectric Films / K. Ostrowski ; I.J. Kalinovski
Reliability Characterization of Organic Ultra Low-k Film Using Voltage Breakdown / A. Krishnamoorthy ; B. Ramany Murthy ; K.Y. Yiang ; W.J. Yoo
Process-Induced Voiding in Copper Interconnect Metallization / P. Lindgren ; K. Downes ; S. Kole ; W. Murphy ; E. Cooney III ; M. Goldstein ; J. Chapple-Sokol
Planarization of Copper Layer for Damascene Interconnection by Electrochemical Polishing in Alkali-Based Solution / G-S. Park ; C-W. Chung
Characterization of a Colloidal Silica Slurry for 0.13 [mu]m Devices in a Copper CMP Process / J. Cadenhead ; G. Huffman ; D. Lewis ; A. Pamatat ; J. Verizzo ; S. Usmani ; J. Siddiqui
Mechanisms of Using Organic Acids to Clean Copper Surfaces / T. Yagishita ; K. Ishikawa ; M. Nakamura
Advanced Packaging
3-Dimensional Chip Stacking for High-Density Electronic Packaging / K. Tanida ; M. Umemoto ; K. Kojiama ; M. Ishino ; M. Bonkohara
Author Index
Subject Index
Preface
Copper Deposition
Relation of Contact Resistance Reduction and Process Parameters of Bonded Copper Interconnects in Three-Dimensional Integration Technology / K.N. Chen ; A. Fan ; C.S. Tan ; R. Reif
96.

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editors, C.L. Claeys ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, 1999  xiii, 386 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v.99-18
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97.

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図書
editors, H.S. Burney ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1999  vii, 278 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-21
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98.

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図書
editors, M. Cahay ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, Inc., c1999  ix, 504 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; 99-22
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99.

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図書
edited by W. A. Adams ... [et al.]
出版情報: Princeton, N. J. : Electrochemical Society, c1975  xi, 521 p. ; 23 cm
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100.

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図書
edited by Donald M. Smyth
出版情報: Princeton, N.J. : Electrochemical Society, c1976  v, 216 p. ; 23 cm
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