| Basics Physics and Materials Technology of GaN LEDs and LDs / Steven P. DenBaars1.： |
| Introduction / 1.1： |
| Historical Evolution of LED Technology / 1.1.1： |
| Basic Physics of LEDs: Injection Luminescence / 1.2： |
| Direct and Indirect Band-Gap Material / 1.2.1： |
| Radiative Recombination / 1.2.2： |
| External Quantum Efficiency / 1.2.3： |
| Luminous Efficiency / 1.2.4： |
| Injection Efficiency / 1.2.5： |
| Heterojunction vs. Homojunction LED Materials / 1.2.6： |
| Quantum Well LEDs / 1.2.7： |
| LED Materials Selection / 1.3： |
| Energy Band Structure/Lattice Constants / 1.3.1： |
| GaN Physical Properties / 1.3.2： |
| GaN Based LED Structures / 1.3.3： |
| Crystal Growth / 1.4： |
| MOCVD Growth / 1.4.1： |
| MOCVD Systems for Production / 1.4.2： |
| Molecular Beam Epitaxy (MBE) / 1.4.3： |
| Chloride Vapor Phase Epitaxy / 1.4.4： |
| Group-III Nitride Materials Growth Issues / 1.5： |
| Substrates / 1.5.1： |
| Nucleation Layer Technology / 1.5.2： |
| Growth and Doping of GaN / 1.5.3： |
| Growth of AlGaN and AlGaN/GaN Heterostructures / 1.5.4： |
| Growth of InGaN and InGaN/GaN Heterostructures / 1.5.5： |
| Conclusions / 1.6： |
| References / 1.7： |
| Theoretical Analysis of Optical Gain Spectra / Takeshi Uenoyama ; Masakatsu Suzuki2.： |
| Optical Gains Spectra by Many-Body Approach / 2.1： |
| Linear Response Theory / 2.2.1： |
| Screening Effects / 2.2.2： |
| Self-Energies of Electron Gas / 2.2.3： |
| Coulomb Enhancement / 2.2.4： |
| Electronic Band Structures / 2.3： |
| Electronic Band Structures of Bulk GaN and AlN / 2.3.1： |
| Strain Effect on Electronic Band Structures / 2.3.2： |
| k.p Theory for Wurtzite / 2.3.3： |
| Physical Parameters / 2.3.4： |
| Subband Structures of GaN/AlGaN Quantum Wells / 2.3.5： |
| Subband in Wurtzite Quantum Wells / 2.3.6： |
| Optical Gain Spectra of III-V Nitrides LD Structures / 2.4： |
| Free Carrier Model / 2.4.1： |
| Coulomb Enhancement (Excitonic Effects) in the Optical Gain / 2.4.2： |
| Optical Gain with Localized States / 2.4.3： |
| Electrical Conductivity Control / Chris G. Van de Walle2.5： |
| Doping / 3.1： |
| Theory of Native Defects and Impurities / 3.1.1： |
| n-type Doping / 3.1.2： |
| p-type Doping / 3.1.3： |
| Band Offsets / 3.2： |
| Theory of Band Offsets at Nitride Interfaces / 3.2.1： |
| Experimental Results for Band Offsets / 3.2.2： |
| Discussion / 3.2.3： |
| Acknowledgments / 3.3： |
| Crystal Defects and Device Performance in LEDs and LDs / Fernando A. Ponce3.4： |
| CrystalGrowth and Microstructure / 4.1： |
| Lattice Structure of the Nitride Semiconductors / 4.1.1： |
| Thin Film Epitaxy and Substrates / 4.1.2： |
| Epitaxy on SiC Substrates / 4.2： |
| Epitaxy on Sapphire Substrates / 4.3： |
| AlN as a Buffer Layer / 4.3.1： |
| GaN as a Buffer Layer / 4.3.2： |
| Homoepitaxial Growth of GaN / 4.4： |
| Defect Microstructurein LEDs and LDs / 4.5： |
| Large Defect Densities in High Performance Materials / 4.5.1： |
| Columnar Structure of GaN on Sapphire / 4.5.2： |
| Tilt Boundaries / 4.5.3： |
| Twist Boundaries / 4.5.4： |
| Polarity and Electronic Properties / 4.6： |
| The Nature of the Dislocation / 4.7： |
| Determination of the Burgers Vector / 4.7.1： |
| Nanopipes and Inversion Domains / 4.7.2： |
| Spatial Variation of Luminescence / 4.8： |
| Undoped Material / 4.8.1： |
| Doped Materials / 4.8.2： |
| Microscopic Properties of In[subscript x]Ga[subscript 1-x]N Quantum Wells / 4.9： |
| The Nature of the InGaN/GaN Interface / 4.9.1： |
| Microstructure of Quantum Wells / 4.9.2： |
| Spatial Variation of the luminescence of In[subscript x]Ga[subscript 1-x]N Quantum Wells / 4.9.3： |
| Microstructure and Device Performance / 4.10： |
| Stress and Point Defect Structure / 4.10.1： |
| Minimization of Strain by Maximizing Film Smoothness / 4.10.2： |
| The Role of Dislocations in Strain Relaxation / 4.10.3： |
| The Role of Nanopipes and Extension to ELOG Structures / 4.10.4： |
| Emission Mechanisms and Excitons in GaN and InGaN Bulk and QWs / Shigefusa F. Chichibu ; Yoichi Kawakami ; Takayuki Sota4.11： |
| GaN Bulk Crystals / 5.1： |
| Free and Bound Excitons / 5.2.1： |
| Biexcitons in GaN / 5.2.2： |
| Strain Effects / 5.2.3： |
| Phonons in Nitrides / 5.2.4： |
| InGaN Bulk and QWs for Practical Devices / 5.3： |
| Quantized Energy Levels / 5.3.1： |
| Piezoelectric Field / 5.3.2： |
| Spontaneous Emission of Localized Excitons / 5.3.3： |
| Localized Exciton Dynamics / 5.3.4： |
| Optical Gain in Nitrides / 5.3.5： |
| Life Testing and Degradation Mechanisms in InGaN LEDs / Marek Osinski ; Daniel L. Barton5.4： |
| Life Testing of InGaN/AlGaN/GaN LEDs / 6.1： |
| Life Testing Primer / 6.2.1： |
| Potential Degradation Regions in LEDs / 6.2.2： |
| Life Test System Considerations / 6.2.3： |
| Results of Life Tests on Nichia Blue InGaN/AlGaN/GaN Double Heterostructure LEDs / 6.2.4： |
| Analysis of Early Test Failures / 6.3： |
| Analysis of LED #19 / 6.3.1： |
| Analysis of LEDs #16 and 17 / 6.3.2： |
| Effects of UV Emission on Plastic Transparency / 6.4： |
| Thermal Degradation of Plastic Package Transparency / 6.5： |
| Degradation of GaN-Based LEDs Under High Current Stress / 6.6： |
| Double Heterostructure Device Testing / 6.7： |
| EBIC Analysis / 6.8： |
| Pulsed Current Stress Experiments and Results on Quantum Well LEDs / 6.9： |
| Failure Analysis of Degraded Quantum Well LEDs / 6.10： |
| Summary / 6.11： |
| Development and Future Prospects of GaN-based LEDs and LD / Shuji Nakamura6.13： |
| Properties of InGaN-based LEDs / 7.1： |
| Amber LEDs / 7.1.1： |
| UV/Blue/Green LEDs / 7.1.3： |
| Roles of Dislocations in InGaN-Based LEDs / 7.1.4： |
| LDs Grown on Sapphire Substrate / 7.2： |
| LDs Grown on Sapphire Substrates / 7.2.1： |
| ELOG Substrate / 7.2.3： |
| InGaN-Based LDs Grown on ELOG Substrates / 7.2.4： |
| LDs Grown on GaN Substrate / 7.3： |
| Free-Standing GaN Substrates / 7.3.1： |
| Characteristics of LDs / 7.3.2： |
| Future Prospects of InGaN-based Emitting Devices / 7.4： |
| Appendix / 7.5： |
| Parameters Table |
| Subject Index |
| Basics Physics and Materials Technology of GaN LEDs and LDs / Steven P. DenBaars1.： |
| Introduction / 1.1： |
| Historical Evolution of LED Technology / 1.1.1： |
図書
