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1.

図書

図書
editors, P. C. Andricacos ...[et al.] ; sponsoring divisions, Electrodeposition, Dielectric Science and Technology, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2002  viii, 258 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-8
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2.

図書

図書
editors, M. Cahay ...[et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  ix, 398 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-19
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3.

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editors, P.C. Chang, S.N.G. Chu, D.N. Buckley
出版情報: Pennington, N.J. : Electrochemical Society, c2001  viii, 164 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-20
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4.

図書

図書
editor, G.S. Mathad ; assistant editors, M. Engelhardt ...[et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  viii, 216 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-24
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5.

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図書
editors, J. Ruzyllo ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2002  x, 374 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-26
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6.

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editors, B.O. Kolbesen ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  x, 362 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-29
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7.

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editos, J.D. Sinclair ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  xviii, 1162 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-22
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8.

図書

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editors, R.K. Kopf ... [et al.] ; sponsoring divisions, Electronics, Sensor
出版情報: Pennington, N.J. : Electrochemical Society, c2002  ix, 362 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-3
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9.

図書

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editors, M.J. Deen, D. Misra, J. Ruzyllo ; sponsoring divisions, Electronics, Dielectric Science and Technology
出版情報: Pennington, N.J. : Electrochemical Society, c2002  viii, 436 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-28
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10.

図書

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editors R.F. Kopf, A.G. Baca, S.N.G. Chu ; [sponsored by] Electronics Division [of the Electrocehmical Society]
出版情報: Pennington, N.J. : Electrochemical Society, c2000  ix, 354 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-1
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11.

図書

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editors, Mark D. Allendorf, Michael L. Hitchman
出版情報: Pennington, N.J. : Electrochemical Society, c2000  xi, 810 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-13
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目次情報: 続きを見る
Fundamental Chemistry and Mechanisms
Atomistic Modeling of Chemical Vapor Deposition: NO on the Si (001) (2x1) Reconstructed Surface / N. Tanpipat ; J. Andzelm ; B. Delley ; A. Korkin ; A. Demkov
Simulation of Surface Diffusion of Silicon and Hydrogen on Single Crystal Silicon Surfaces / S. Somasi ; B. Khomami ; R. Lovett
Activation Energy Study for the Nucleation and Growth Stages of Cu(TMVS)(HFAC) Sourced Copper CVD / D. Yang ; J. Hong ; D. Richards ; T. Cale
Development of Gas Phase and Surface Kinetic Schemes for the MOCVD of CdTe, ZnS and ZnSe / C. Cavallotti ; V. Bertani ; M. Masi ; S. Carra
Determination of Energy Transfer Effects for Molecular Decomposition / W. Tsang ; V. Mokrushin
Gas-Phase Chemistry in the CVD of Silicon Carbide: Theoretical Study of the Reactions SiH[subscript 2]+CH[subscript 4], SiH[subscript 2]+C[subscript 2]H[subscript 4], and SiH[subscript 2]+C[subscript 2]H[subscript 2] / C. Raffy ; M.D. Allendorf ; E. Blanquet ; C.F. Melius
SiH[subscript 4] Reaction Mechanism Research Using a Fast Wafer-Rotating Reactor / Y. Sato ; N. T. Tamaoki ; T. Ohmine
Modeling Particle Nucleation during Thermal CVD of Silicon from Silane using Kinetic Monte Carlo Simulation / X. Li ; M. Swihart
Measurement of the Kinetics of the High Temperature Oxidation of TiCl[subscript 4] / R. Raghavan ; D. Lee ; D. Conrad ; P. Morrison, Jr.
Influence of Carbon Precursor on the Gas-Phase Chemistry of the Ti-C-Cl-H System / S. de Persis ; F. Teyssandier ; A. McDaniel
Molecular Beam Mass Spectrometry Studies of the Thermal Decomposition of Tetrakis(Dimethylamino)Titanium / C.C. Amato-Wierda ; E.T. Norton, Jr.
Kinetic and Mechanistic Studies of the Chemical Vapor Deposition of Ti-Si-N Thin Films with Ti(NMe[subscript 2])[subscript 4](TDMAT), NH[subscript 3], and Si H[subscript 4] / E.T. Norton ; C. Amato-Wierda
Evaluation of Gas Phase Reaction Rate Constant by Deposition Profile Analysis for In Situ Counter Diffusion CVD / Y. Egashira ; H. Tanaka ; T. Mina ; N. Mori ; K. Ueyama
Integration of a Quadrupole Mass Spectrometer and a Quartz Crystal Microbalance for In Situ Characterization of Atomic Layer Deposition Processes in Flow Type Reactors / A. Rahtu ; M. Ritala
Nanostructures and Quantum Dots
Nanostructures by CVD Assisted Methods Using Inorganic Precursors / P. Doppelt ; R. Even ; F. Marchi ; V. Bouchiat ; H. Dallaporta ; S. Safarov ; D. Tonneau ; P. Hoffmann ; F. Cicoira ; I. Utke ; B. Dwir ; K. Leifer ; E. Kapon
Effect of Carbon Predeposition Nucleation of Quantum Dots / Q. Zhao ; D. Greve
Plasma-Enhanced MOCVD of Smooth Nanometersized Metal/Silicon Single- and Multilayerfilms / F. Hamelmann ; G. Haindl ; A. Aschentrup ; A. Klipp ; U. Kleineberg ; P. Jutzi ; U. Heinzmann
Modeling, Reactor Design, and Process Control
Multicomponent Transport and Mixed Convection Flows in CVD Reactors / A. Ern
A Benchmark Solution for Multi-Dimensional Thermal CVD Modeling with Detailed Chemistry / C.R. Kleijn
On the Occurrence of Non-Symmetric Flows in Axisymmetric CVD Reactors / H. van Santen ; H.E.A. van den Akker
The Dynamics of Thin Film Growth: A Modeling Study / M. Gallivan ; R. Murray ; D. Goodwin
Improvement of Temperature Uniformity in Rapid Thermal CVD Systems Using Multivariable Control / F. van Bilsen ; R. De Keyser
Systematic Approach to Controlling Abnormal Structures Growth in CVD - Simulation of Nodule Structure Evolution
A Two-Dimensional Simulation Model for Oxy-Acetylene Flame CVD of Diamond Films / M. Okkerse ; C. Kleijn ; H. van den Akker ; M.H.J.M. de Croon ; G.B. Marin
Silicon Films Morphology Design Through Multiscale CVD Modeling
Numerical Simulation of Silicon Carbide Deposition in a Cold Wall CVD Reactor / G. Chaix ; A. Dolle t ; M. Matecki ; Y. Wang
Effect of Gas Phase Nucleation on Silicon Carbide Chemical Vapor Deposition / A.N. Vorob'ev ; A.E. Komissarov ; M.V. Bogdanov ; S. Yu. Karpov ; A.A. Lovtsus ; Yu.N. Makarov ; S.A. Lowry
CVD of SiC from CH[subscript 3]SiCl[subscript 3] in a Hot-Wall-Reactor System: Transport Pheonomena and Kinetic Aspects / V.K. Wunder ; N. Popovska ; H. Gerhard ; G. Emig ; P. Kaufmann ; L. Kadinski ; F. Durst
Modeling and System Design for Atmospheric Pressure CVD of YSZ / T. Besmann ; V. Varanasi ; T. Starr ; T. Anderson
A Stagnation-Flow MOCVD Reactor for Intelligent Deposition of YBCO Thin Films / A. Tripathi ; D. Boyd ; H. Atwater ; L. R. Raja ; R. J. Kee ; J. Musolf
Metalorganic Chemical Vapor Deposition
New Liquid Precursors for CVD of Metal-Containing Materials / R. Gordon
Novel MOCVD Process for the Low Temperature Deposition of the Chromium Nitride Phases / F. Maury ; D. Duminica ; F. Senocq
MOCVD of WN[subscript x] Thin Films Using Novel Imido Precursors / S. Johnston ; C. Ortiz ; O. Bchir ; Y. Zhang
Vapor Phase Epitaxy of Magnesium Oxide on Silicon Using Methylmagnesium Alkoxides / S.S. Lee ; S.Y. Lee ; C. Kim ; Y. Kim
Use of Ti(dpm)[subscript 2](Opr[superscript i])[subscript 2] Precursor to Obtain TiO[subscript 2] Film / V. Krisyuk ; A.E. Turgambaeva ; I.K. Igumenov ; V.G. Bessergenev ; I.V. Khmelinskii ; R.J.F. Pereira
Monitoring of MOCVD Fabrication of LaF[subscript 3] Films Using the Novel La(hfac)[subscript 3] - Diglyme Adducts and In Situ Synthesized La(hfac)[subscript 3] Anhydrous Precursor / G.G. Condorelli ; I.L. Fragala
Ceramics, Composites, and Hard Materials
Chemical Vapor Deposition of Aluminum on Silicon Carbide for the Investigation of the Interfacial Microstructure in Discontinuously Reinforced Aluminum / P. Oritz ; D. Oquab ; C. Vahlas ; I. Hall
Development of CVD Mullite Coatings / S.N. Basu ; V.K. Sarin
Evaluation of Various Hypotheses on the Influence of Nitrogen on Diamond Growth in an Oxy-Acetylene Torch Reactor
MOCVD of Aluminosilicate Corrosion Protection Coatings / S.M. Zemskova ; J.A. Haynes ; T.M. Besmann
Chemical Vapor Deposition of MoS[subscript 2] on and in TiN Coatings / H. Keune ; G. Wahl ; W. Lacom
Measurement of the Retarding Effect of HCl on the Rate of CVD of Titaniumdiboride / Ch.-Ho Yu ; E. Zimmermann ; D. Neuschutz
Factors Affecting the Amount of Carbon in Titanium Carbide Films Made by CVD / C. C. Amato-Wierda ; K. E. Versprille ; P. Ramsey
Characterization of Ti-W-C Thin Films Deposited by CVD / C.C Amato-Wierda ; H. X. Ji
MOCVD of Chromium Carbide from Bis-Ethyl-Benzene-Chromium / M. Satschko
Effect of H[subscript 2]S on the Microstructure and Deposition Characteristics of Chemically Vapor Deposited Al[subscript 2]O[subscript 3] / S. Ruppi ; A. Larsson
Cosmo-Mimetic Carbon Micro-Coils / D. Motojima ; X. Chen ; W. In-Hwang ; T. Kuzuya ; M. Kohda ; Y. Hishikawa
Morphology of Carbon Micro-coils Grown by Catalytic Decomposition of Hydrocarbons / W.-In Hwang ; S. Motojima
Silicon and Silicon Germanium Materials
Chemical Vapor Deposition of Low Trap Density SiGe Quantum Well Layers on Silicon / S. Kar ; P. Zaumseil
Loading Effects during Non-Selective Epitaxial Growth of Si and SiGe / J. Pejnefors ; S.-L. Zhang ; J.V. Grahn ; M. Ostling
Thermodynamic Analysis of Selective Epitaxial Growth of Silicon / W.-S. Cheong ; J.H. Joung ; J.W. Park ; D.J. Ahn
Nanocrystals Formation and Microstructure Evolution of Amorphous Si and Si[subscript 0].7Ge[subscript 0.3] by Using Low Pressure Chemical Vapor Deposition / T.-S. Yoon ; D.-H. Lee ; J.-Y Koon ; K.B. Kim
The Profile Control of n-type Doping in Low and High Temperature Si Epitaxy for High Frequency Bipolar Transistors / H.H. Radamson ; B. Mohadjeri ; B.G. Malm ; G. Landgren
CVD-Epitaxial Growth on Porous Si for ELTRAN SOI-Epi Wafers / N. Sato ; S. Ishii ; T. Yonehara
Dislocation Generation in Selective and Non Selective SiGe Epitaxy / C. Fellous ; F. Romagna ; D. Dutartre
MOSFET Evaluation of Ultraclean-CVD Si and SiGe Grown at 550[degree]C on SIMOX / K. Fujinaga
Global Model of Silicon Chemical Vapor Deposition in Centura Reactors / A.S. Segal ; A.V. Kondratyev ; A.O. Galyukov ; S.Yu. Karpov ; W. Siebert ; P. Storck ; S. Lowry
A Comparison of Commonalities and Differences of Silicon-Based Thin Films CVD Processes for ULSI Device Technologies / V. Vassiliev
Metals, Metallization, and Diffusion Barriers
Selective Nucleation and Area Selective OMCVD of Gold on Patterned Self-Assembled Organic Monolayers: A Comparison of OMCVD and PVD / R.A. Fischer ; C. Winter ; U. Weckenmann ; J. Klashammer ; V. Scheumann ; S. Mittler
Surface Analysis of Al Film Prepared from Dimethyl-Aluminum-Hydride / M. Sugiyama ; H. Ogawa ; H. Itoh ; J. Aoyama ; Y. Horiike ; H. Komiyama ; Y. Shimogaki
Chemical Vapor Deposition of Titanium Nitride and Titanium Silicon Nitride Thin Films from Tetrakis-(dimethylamido) Titanium and Hydrazine as a Co-Reactant / D.A. Wierda
Chemical Vapor Deposition of Copper Using hfacCu[superscript (1)]DMB(3,3-dimethyl-1-butene) Liquid Precursor / K.- K. Choi ; S.-W. Rhee
Reaction of Bis-(2,4-Pentanedionato) M(II) (M= Ni, Cu) Under Low Pressure CVD Conditions / C.R. Vestal ; H.M. Sturgill ; T.C. DeVore
Metalorganic Chemical Vapor Deposition of Nickel Films: Investigation of a New Precursor, [Ni(tmen)([mu]-tfa) subscript 2]([mu]H[subscript 2]O) / J.-K. Kuang ; A. Gleizes
Platinum Thin Films Obtained via MOCVD on Quartz and CaF[subscript 2] Windows as Electrode Surfaces for In Situ Spectroelectrochemistry / S. Santi ; G. Carta ; S. Garon ; L. Rizzo ; G. Rossetto ; P. Zanella ; D. Barreca ; E. Tondello
Surface Adsorption of WF[subscript 6] on Si and SiO[subscript 2] in Selective W-CVD / Y. Yamamoto ; T. Matsuura ; J. Murota
CVD Tungsten Via Void Minimization for Sub 0.25 [mu]m Technology / A.M. Haider ; D.J. Rose ; J.R.D. Debord ; S.P. Zuhoski
Three-Dimensional Computer Simulation of WSi[subscript x] CVD VLSI Processing-Effect of Outlet Position / K. Sugawara ; M. Kunishige ; T. Muranushi ; Y.K. Chae
Processing of Tungsten Single Crystals by Chemical Vapor Deposition / R. Zee ; Z. Xiao ; H.S. Gale ; B.A. Chin ; L.L. Begg
Simplified CMP Planarization Process Module for Shallow Trench Isolation Applications / K. Kapkin ; M. Mogaard ; T. Curtis ; J. deRuiter
Dielectric Materials
Reactor Scale Simulation of Metal Oxide Deposition from an Inorganic Precursor / J.V. Cole ; A. Nangia ; T. Mihopoulas ; R. Hegde
Atomic Layer Deposition of High-k Oxides / K. Kukli ; M. Vehkamaki ; T. Hanninen ; T. Hatanpaa ; P.I. Raisanen ; M. Leskela
Quality Improvement of SiO[subscript 2]-Films by Adding Foreign Gases in Photo-Chemical Vapor Deposition / Y. Motoyama ; J.-i. Miyano ; T. Yokoyama ; K. Toshikawa ; T. Mori ; H. Mutou ; K. Kurosawa ; A. Yokotani ; W. Sasaki
SiO[subscript 2] Deposition Mechanism in Photo-Chemical Vapor Deposition Using Vacuum Ultraviolet Excimer Lamp / J. Miyano
Kinetic Growth of Al[subscript 2]O[subscript 3] Thin Films Using Aluminium Dimethylisopropoxide as Precursor / G. A. Battison ; R. Gerbasi
Atomic Layer Deposition of Metal Oxide Films by using Metal Alkoxides as an Oxygen Source
Optimization of LPCVD Nitride Deposition Conditions for Non-Volatile Memory Inter Poly Dielectric Applications / M.J. Teepen ; M.A.A.M. van Wijck ; H. Sprey
Ultra Thin TiO[subscript 2] Films Deposited by Atomic Layer Chemical Vapor Deposition / M. Schuisky ; A. Aidla ; J. Aarik ; M. Ludvigsson ; A. Harsta
Characterization of Ta[subscript 2]O[subscript 5] Films Prepared by ALCVD / K. Forsgren ; J. Sundqvist
In-Situ Preparation of Ti-Containing Ta[subscript 2]O[subscript 5] Films by Halide CVD
CVD of Zr-Sn-Ti-O for Capacitor Applications / Y. Senzaki ; G. Alers ; A. Hochberg ; D. Roberts ; J. Norman ; R. Fleming ; H. Krautter
Gallium Nitride and Other III-V Materials
Investigations of Chemical Vapor Deposition of GaN Using Synchrotron Radiation / C. Thompson ; G.B. Stephenson ; J.A. Eastman ; A. Munkholm ; O. Auciello ; M.V. Ramana Murty ; P. Fini ; S.P. DenBaars ; J.S. Speck
Reaction-Transport Models of the Metalorganic Vapor Phase Epitaxy of Gallium Nitride / R.P. Pawlowski ; C. Theodoropoulos ; A.G. Salinger ; H.K. Moffat ; T.J. Mountziaris ; J.N. Shadid ; E.J. Thrush
Growth of Hexagonal GaN Films by MOCVD Using Novel Single Precursors / C.G. Kim ; S.H. Yoo ; J.H. Lee ; Y.K. Lee ; M.M. Sung
In Situ Measurement of the Decomposition on GaN OMVPE Precursors by Raman Spectroscopy / C. Park ; S. Lee ; J. Seo ; M. Huang ; T.J. Anderson
Growth Kinetics and Mechanistic Studies of GaN Thin Films Grown by OMVPE Using (N[subscript 3])[subscript 2]Ga[(CH[subscript 2])[subscript 3]NMe subscript 2] as Single Source Precursor / A. Wohlfart ; A. Devi ; W. Rogge ; J. Schafer ; J. Wolfrum
Experimental and Numerical Study of InGaAsP Materials Growth Kinetics and Composition / O. Feron ; Y. Nakano
Ruthenium Doped Indium Phosphide Growth by Low Pressure Hydride Vapor Phase Epitaxy / D. Soderstrom ; S. Lourdudoss ; M. Wallnas ; A. Dadgar ; O. Stenzel ; D. Bimberg ; H. Schumann
Quasi-Thermodynamic Models of Surface Chemistry: Application to MOVPE of III-V Ternary Compounds / E.V. Yakovlev ; R.A. Talalaev ; Yu.A. Shopolyanskiy ; Y.N. Makarov
Electronic, Optical, and Magnetic Materials
Chemical Vapor Deposition and Magnetoresistance of Granular Cu-Co Films / I.S. Chuprakov ; K.-H. Dahmen
Diagnostics of Metalorganic Chemical Vapor Deposition of (Ba, Sr)TiO[subscript 3] Films by Microdischarge Optical Emission Spectroscopy / S. Momose ; T. Nakamura ; K. Tachibana
Bismuth Titanate Thin Films Deposited by Halide Chemical Vapor Deposition / S. Khartsev ; A. Grishin
LPCVD of Optical Interference Coatings for Micro-Optical Applications / M. George ; D.Z. Rogers
Evaluation of Precursors for the Chemical Vapour Deposition of Tin Oxide / A.M.B. van Mol ; G.R. Alcott ; C.I.M.A. Spee ; J.C. Schouten
Characteristics of Silicon Oxy-Nitride Thin Films Deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition / C. Simionescu ; F. Bounasri ; S.G. Wallace ; H.K. Haugen ; J.A. Davies ; P. Mascher
CVD of Molecule-based Conductors and Magnets / L. Valade ; D. deCaro ; H. Casellas ; M. Basso-Bert ; C. Faulmann ; J.-P. Legros ; P. Cassoux ; L. Aries
Stability of RuO[subscript 2] Bottom Electrode and Its Effect on the Ba-Sr-Ti Oxide Film Quality / Y.-J. Oh ; S.H. Moon ; C.-H. Chung
Multilayers for the Growth of HTc Superconducting Tape: A Full MOCVD Approach / R. Lo Nigro ; G. Malandrino
Fundamental Chemistry and Mechanisms
Atomistic Modeling of Chemical Vapor Deposition: NO on the Si (001) (2x1) Reconstructed Surface / N. Tanpipat ; J. Andzelm ; B. Delley ; A. Korkin ; A. Demkov
Simulation of Surface Diffusion of Silicon and Hydrogen on Single Crystal Silicon Surfaces / S. Somasi ; B. Khomami ; R. Lovett
12.

図書

図書
editors, Hisham Z. Massoud ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2000  xiv, 539 p. ; 27 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-2
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13.

図書

図書
editor, L. Mendicino ; [jointly sponsored by the Dielectric Science and Technology Division]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  vii, 212 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-6
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14.

図書

図書
editors, Sorin Cristoloveanu ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  x, 464 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-3
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図書

図書
editors, F. Ren ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  ix, 318 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-1
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図書

図書
editor, Y. Kuo ; [sponsored by] Electronics and Dielectric Science and Technology Divisions [of the Electrochemical Society]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  xi, 340 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; 2000-31
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目次情報: 続きを見る
Preface
Reviews of TFT Research Activities
Advances in Printed Liquid Crystal Displays with Plastic Substrates / E. Lueder
A Brief Review of Thin-Film Transistor Research Done in Tokyo Institute of Technology / M. Matsumura
Amorphous and Microcrystalline Silicon TFTs
ECR-PECVD of Silicon Nitride and Hydrogenated Amorphous Silicon at 80[degree]C For TFTs / A. J. Flewitt ; A. P. Dyson ; J. Robertson ; W. I. Milne
Amorphous Silicon Thin Film Transistor Fabricated with a New Copper Dry Etching Method / S. Lee ; Y. Kuo ; J. P. Donnely ; J.-Y. Tewg ; H. Lee
Microcrystalline Silicon TFTs For AMLCDs / I. D. French ; P. Roca i Cabarrocas ; S. C. Deane ; R. B. Wehrspohn ; M. J. Powell
Use of 120[degree]C n[superscript +] [mu]c-Si:H in Low Temperature TFT Fabrication / T. Charania ; A. Sazonov ; A. Nathan
Process Considerations for Small Area a-Si:H Vertical Thin Film Transistors / I. Chan ; B. Park
Polycrystalline Silicon TFTs
Future Trends in Low Temperature Poly-Si TFT-LCD by Excimer Laser Anneal / S. Uchikoga
Low Temperature Process Technologies and "Process Integration" for High Performance Polycrystalline Silicon Thin-Film Transistors / S. Higashi
Top-Gate Amorphous Si Air-Gap Transistors with Poly-Si Contacts / P. Mei ; J. Ho ; R. Lau ; J. P. Lu ; B. Street ; J. Boyce
Full Optimized Process of Polysilicon TFT's Using Very Large Excimer Laser / Y. Helen ; G. Gautier ; K. Mourgues ; T. Mohammed-Brahim ; F. Raoult ; O. Bonnaud ; C. Prat ; D. Zahorski ; D. Lemoine
Polycrystalline Silicon Thin Film Transistors Free from Large Angle Grain Boundaries / M. Maekawa ; Y. Nakamura ; Y. Umenaka ; J. Takagi ; M. Hijikigawa
Low Temperature Poly-Si TFT-LCDs Using P-type Technology / K.-J. Kim ; Y.-M. Ha ; J.-C. Yeo ; B.-K. Kim ; H.-S. Choi ; D.-G. Kim
High Performance Low Temperature Polysilicon TFT'S with Ultra-thin Liquidphase Deposited Gate Oxide and N[subscript 2]O Plasma Treatment / C.-F. Yeh ; S.-C. Wang ; J.-N. Jeng ; C.-Y. Lu
Crystallization, Etching, Deposition, Hydrogenation, and Metallization
Silicide Mediated Crystallization of Patterned Amorphous Silicon in the Electric Field / S. J. Park ; K. H. Kim ; B. R. Cho ; A. Y. Kim ; S. Y. Yoon ; J. Jang
Two-Dimensionally Position-Controlled Ultra-Large Grain Growth Based on Phase-Modulated Excimer-Laser Annealing Method / M. Nakata
The Lateral Grain Growth of ELA Poly-Si by Employing Selective Melting and Lateral Heat Sink / J.-H. Jeon ; M.-C. Lee ; J.-W. Park ; M.-K. Han
Novel Wet Taper Etching of Interconnects on Large Area Substrates Using Galvanic Reaction / T. Kaneko ; Y. Hashimoto ; K. Ono ; K. Fujii ; K. Onisawa
High Quality Silicon Oxide Deposited with A Multipolar Electron Cyclotron Resonance Plasma Source / G. Isai ; A. Kovalgin ; J. Holleman ; P. Woerlee ; H. Wallinga
Effects of NH[subscript 3]/N[subscript 2] Plasma Treatment on Very-Low-Temperature (100[degree]C) Oxides / C.-H. Kim ; S.-H. Jung ; W.-J. Nam
Electroless Deposition of Ni-P Alloy in Electronics / T.N. Khoperia
Devices and Modeling
Mechanisms Underlying the Off Characteristics of a-Si:H Thin Film Transistors / P. Servati
Analysis of the Leakage Current of Poly-Si TFT Using Counter-Doping Process / J. Y. Yang ; S. H. Yu ; J. H. Kim
Low Temperature Poly-Si TFT with Lateral Body Terminal for Stability Improvement / J. S. Yoo ; M. C. Lee ; I. H. Song ; M. K. Han
Low Frequency Noise in CdSe Thin-Film Transistors / M. J. Deen ; S. L. Rumyantsev ; I. Glick ; A. Smozh ; M. Westcott ; D. Waechter
Materials
Defect Reduction Technologies Used to Improve Characteristics of Polycrystalline Silicon Thin Film Transistors / Y. Tsunoda ; T. Sameshima
Polysilicon Thin Film Transistors on Glass-Ceramic Substrates / S. M. Krasulya ; N. I. Nemchuk ; D. G. Ast ; J. G. Couillard
Structural Differences between Deuterated and Hydrogenated Hydrogenated Silicon Nitride/Oxynitride / A. Shih ; S.-C. Lee ; T. R. Yang ; C. C. Lu
Highly Packed and Ultra-Large Si Grains Grown by a Single-Shot Irradiation of Excimer-Laser Light Pulse / Y. Sano ; W-C. Yeh
Low-Pressure CVD of Germanium-Silicon Films Using Silane and Germane Sources / C. Salm
Unhydrogenated Polycrystalline Silicon-Germanium Thin Film Transistors by LPCVD / D. Guillet ; R. Rogel ; M. Sarret
New and Novel Applications
Flat Panel X-Ray Image Detectors for Medical Imaging Applications / Y. Izumi ; Y. Yamane ; F. Funada ; S. Adachi ; S. Yamada
Analog Addressed Microdisplays / A. Van Calster
Polysilicon Thin Film Transistor Development for Smart Power Applications / Y. Wu ; F. Robb ; J. Shen ; S. Robb ; K. Kamekona
Polysilicon Thin Film Transistor and EEPROM Characteristics for Three Dimensional Memory / J. R. Lindsey ; T. S. Kalkur
Active Pixel TFT Array for Digital Imaging Applications / K.S. Karim
Author Index
Subject Index
Preface
Reviews of TFT Research Activities
Advances in Printed Liquid Crystal Displays with Plastic Substrates / E. Lueder
17.

図書

図書
editors, M. Cahay ... [et. al] ; [sponsored by] Dielectric Science and Technology, Electronics, and Luminescence and Display Materials Divisions [of the Electrochemical Society]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  viii, 280 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-28
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Preface
Field Emitter Arrays
Tip Self-Heating to Enhance Microfabricated Cold Cathode Operation Lifetime / P.R. Schwoebel ; C.A. Spindt ; C.E. Holland ; J.A. Panitz
Laser Assisted Fabrication of Single Crystalline Tungsten Rods for use as Field Emitting Cathodes / K. Larsson Bjorklund ; C. Ribbing ; H. Norde ; M. Boman
Theory of H Induced Enhancement of Field Emission from and O Covered Mo(110) Surface / P. von Allmen ; R. Ramprasad ; L.R.C. Fonseca ; P. Ordejon
Process Simulation of a Silicon Field Electron Emitter with Integrated Double-gated Beam Focusing Lens / G. Oleszek ; M. Rodriquez
Carbon Nanotubes
Carbon Nanotube Cold Cathodes Fabrication and Properties / C. Bower ; W. Zhu
Calculating the Field Emission Current from a Carbon Nanotube
Scanning Anode Field Emission Microscopy on Carbon Nanotube Thin Film Emitters / L.O. Nilsson ; O. Groenig ; P. Groenig ; L. Schlapbach
Template Based Carbon Nanotubes as A Field Emitter / S.-H. Jeong ; H.-Y. Hwang ; K.-H. Lee ; W.-K. Cho ; K.-Y. Kim ; H.-S. Jeong
Field Emission Cathode from Aligned Arrays of Carbon Nanotubes / A. Govyadinov ; P. Mardilovich ; D. Routkevich
Electron Emission Cooling
Cooling by Field Emission into the Vacuum with Resonant Tunneling: Design Parameters / R. Tsu
New Results on Microelectronic Cooling Using the Inverse Nottingham Effect: Low Temperature Operation and Efficiency / P.H Cutler ; N.M. Miskovsky ; N. Kumar ; M.S. Chung
Theory and Simulation
The Semiconductor Statistical Hyperbolic-Ellipsoidal Model For Evaluation of Current From Microstructures / K.L. Jensen
Non Equilibrium Field Emission from Wide Bandgap Semiconductors / G.L. Bilbro
Onset of Current Self-Quenching in an InP/CdS/LaS Cold Cathode / Y. Modukuru ; M. Cahay ; P.D. Mumford
Negative Electron Affinity/ Low Electron Affinity
Novel Electron Sources / V.T. Binh ; V. Semet ; J.P. Dupin
Effect of Surface Properties on Electron Energy Distribution from C(111) and C(100) Surfaces / J. Yater ; A. Shih
Synthesis and Work Function Measurement of LaS and NdS Bulk Samples / J. Thachery ; H. Tang ; P. Boolchand
Carbons, Diamond, and a-Silicon
Electron Emission from Carbon Films / R.J. Nemanich ; F.A.M. Kock ; J.M. Garguilo
Fabrication and Characterization of Cathodoluminescent Devices made Using Porous Silicon as a Cold-Cathode Field Emitter / D. Heyde Elqaq ; M.-A. Hasan
Monolithic Thin Film Edge Emission Diodes / H.R. Kim ; L. Karpov ; V. Bhatia ; M. Weichold
Electron Emission Characteristics of Diamond / B. Pate
Conditioning of Amorphous Cathodes via Current Stressing / S.R.P. Silva ; J.D. Carey ; C.H. Poa ; J.M. Shannon
Field Emission Display Development at Motorola / A.A Talin ; B.F.Coll. Yi Wei ; K.A. Dean ; J.E. Jaskie
Rehybridization of Atomic Orbitals and Field Emission Properties of Nanostructured Graphite-like Materials / A.N. Obraztsov ; A.P. Volkov ; A.I. Boronin ; S.V. Kosheev
Author Index
Subject Index
Preface
Field Emitter Arrays
Tip Self-Heating to Enhance Microfabricated Cold Cathode Operation Lifetime / P.R. Schwoebel ; C.A. Spindt ; C.E. Holland ; J.A. Panitz
18.

図書

図書
editors, P.J. Hesketh ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 258 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-19
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Preface
Micromachining
The Microfactory System using Electrochemical Machining / Masayuki Suda ; Kazuyoshi Furuta ; Toshihiko Sakuhara ; Tatsuaki Ataka
Electroplated Nanocrystalline Nickel-Iron Alloys as a New Powerful Material for Microstructured Molding Tools / A. Fath ; W. Leskopf ; K. Bade ; W. Bacher
Lateral Etch Study of Thin Films Using Hydrofluroric Acid Chemistries for MEMS Devices / G. Matamis ; Chuan-Che Wang ; B. Gogoi
Low Surface Tension Etching Solutions for Silicon Dioxide Removal in Microelectromechanical Systems / M. J. Parent ; L. Zazzera ; P. Rajtar ; F. E. Behr
Hybrid Micromachining and Surface Microstructuring of Alumina Ceramic / P. Mardilovich ; D. Routkevitch ; A. Govyadinov
Microfluidics
Micro Scale Purification Systems for Biological Sample Preparation / A. B. Frazier
Challenges and Solutions for Packaging MEMS and Microsystems / J. Neysmith ; D. F. Baldwin
Fabrication and Characterization of Plastic Microfluidic Devices Modified with Polyelectrolyte Multilayers / L. E. Loscascio ; S. L. R. Barker ; D. Ross ; Jay Xu ; S. Roberson ; M. Tarlov ; M. Gaitan
Bulk-Etched Integrated Mesoscopic Fluidic Interconnects for Fluidic Microdevices / J. A. Scalf ; D. Liepmann ; A. P. Pisano
Electro-Magnetically Actuated Diverting Valve Using LTCC Tapes / J. R. Gillman ; P. Espinoza-Vallejos ; L. Sola-Laguna ; J. J. Santiago-Aviles
Design of a MEMS Magnetic Bi-Stable Valve / D. Creyts IV ; P. J. Hesketh ; G. C. Frye-Mason
Room Temperature, Adhesive Bonding for Wafer Scale Packaging of Fluidic Microsystems / X. Ma ; B. Gierhart ; S. D. Collins ; R. L. Smith
Physical Sensors
Inertial Sensors: The Drive for Aspect Ratio / P. L. Bergstrom
Residual Stress Effect and Improvement Method on the Performance of Diaphragm-Based Piezoelectric Microphones / Mengnian Niu ; Sok Kim
A Post-Processing Method for Suppressing the Residual Mechanical Stress in CMOS Layers, for MEMS Applications / B. Ghodsian ; V. Milanovic
Chemical Sensors
Chemical Microsensors for Aerospace Applications / G. W. Hunter ; P. G. Neudeck ; G. Fralick ; C. C. Liu ; Q. H. Wu ; M. S. Sawayda ; Z. Jin ; J. Hammond ; D. Makel ; W. A. Rauch ; M. Liu ; G. Hall
A MEMS Based Hybrid Preconcentrator/Chemiresistor Chemical Sensor / R. C. Hughes ; S. V. Patel ; R. P. Manginell
Micro-Hotplate, an Useful Concept for Gas Sensing, Fluidics and Space Applications / D. Briand ; O. Guenat ; B. van der Schoot ; T. Hirata ; N. F. de Rooij
Detection of Trace Silver and Copper at an Array of Boron-Doped Diamond Microdisk Electrodes / C. Madore ; A. Duret ; W. Haenni ; A. Perret
FET Based pH and Nitrate Checkers for Acid-Rain Monitoring / S. Wakida ; M. Yamane ; S. Takeda ; Z. Siroma ; Y. Tsujimura ; J. Liu
Biosensors
Microfabricated PMMA Structure for DNA Preconcentration and Electrophoresis / Yu-Cheng Lin ; Chien-Kai Tseng ; Shao-Qin Hou
Soluble Sensors of Telephonic Signals / M. Garnett ; J. L. Remo
Selective Deposition of Octasubstituted Phthalocyanine Materials Based on Hydrophobic / Hydrophilic Surface Interactions / R. A. P. Zangmeister ; N. R. Armstrong
Nanomechanical Detection of Biomolecular Interactions / K. M. Hansen ; Guanghua Wu ; Hai-Feng Ji ; T. Thundat ; R. Datar ; R. Cote ; A. Majumdar
Ultra-Sensative Resonant Frequency Based Mass Detector / B. Ilic ; D. Czaplewski ; H. G. Craighead ; P. Neuzi ; C. Campagnolo ; C. Batt
Microfabrication Processes
Developing a [mu]-Fabrication Course: A Study in Multidisciplinary MEMS Curriculum Development / R. S. Evans
Microstructures for Monitoring Wafer Uniformity of Reactive Ion Etching / R. Leung ; D. W. Howard
Water Dispersible Silanes for Wettability Modification of Polysilicon / A. M. Almanza-Workman ; S. Raghavan ; P. Deymier ; D. J. Monk ; R. Roop
Correlation of Metal Film Grain Size to Optical Measurement Results / T. Robinson ; C. Narayan ; J. Sledziewski ; G. Ready ; S. Alie
Preface
Micromachining
The Microfactory System using Electrochemical Machining / Masayuki Suda ; Kazuyoshi Furuta ; Toshihiko Sakuhara ; Tatsuaki Ataka
19.

図書

図書
editors, A.G. Baca, R.F. Kopf
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 214 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-18
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Preface
Symposium Organizers
State-of-the-art Program on Compound Semiconductors (XXXIII)
InP HBT and HEMT Technology and Applications / A. Gutierrez-Aitken ; A. K. Oki ; D. C. Streit ; R. Lai ; D. Sawdai ; Y. C. Chen ; E. Kaneshiro ; R. Grundbacher ; P. C. Grossman ; T. Block ; P. Chin ; M. Barsky ; M. Wojtowicz ; H. C. Yen
Reduced Area InGaAs/InP HBT Device Fabrication for High Speed Circuit Applications / R. F. Kopf ; N. G. Weimann ; R. A. Hamm ; R. W. Ryan ; A. Tate ; M. A. Melendes ; R. Melendes ; Q. Lee ; G. Georgiou ; Y. Baeyens ; Y-K. Chen
Non-Crystallographic Wet Etching of Gallium Arsenide / A. G. Baca ; J. R. Laroche ; P. C. Chang ; F. Ren
Chemical Etching Behavior of n-AlGaAs/p-AlGaAs Structures under Different Light Illumination Conditions / K. Shigyo ; Z. Kawazu
Progress in Mid-IR Type-II Interband Cascade Lasers / R. Q. Yang ; J. L. Bradshaw ; J. D. Bruno ; J. T. Pham ; D. E. Wortman
Development of III-Nitrides for Near-Infrared Optoelectronics using Intersubband Transitions / H. M. Ng ; C. Gmachl ; S. N. G. Chu ; A. Y. Cho
Visible Vertical Cavity Light Emitters for Fibre Optical Communication / M. Saarinen ; V. Vilokkinen ; P. Sipilo ; N. Xiang ; S. Orsila ; M. Guina ; P. Melanen ; M. Dumitrescu ; P. Uusimaa ; P. Savolainen ; M. Pessa
Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors / N. Y. Li ; E. Armour ; P. R. Sharps ; H. Q. Hou
Antimonide-Based Long-Wavelength Lasers on GaAs Substrates / J. F. Klem ; O. Blum
Novel MOS Schemes for Electronic Devices with Photoanodically Grown Oxides on GaN Surfaces / D. Mistele ; T. Rotter ; R. Ferretti ; H. Klausing ; F. Fedler ; O. K. Semchinova ; J. Stemmer ; J. Aderhold ; J. Graul
GaN Power Devices / S. J. Pearton ; A. P. Zhang ; G. Dang ; X. A. Cao ; K. P. Lee ; H. Cho ; B. P. Gila ; J. W. Johnson ; C. Monier ; C. R. Abernathy ; J. Han ; J.-I. Chyi ; C.-M. Lee ; T.-E. Nee ; C.-C. Chuo ; G. C. Chi
Fabrication of an Integrated Optics 1 to 2 Optical Switch / Y. Hernandez ; J.-P. Vilcot ; D. Decoster ; J. Chazelas
Optical Characterization of Acceptor Implantation in GaN / B. J. Skromme ; G. L. Martinez ; A. Suvkhanov ; L. Krasnobaev ; D. B. Poker
Cantilever Epitaxy: A Simple Lateral Growth Technique for Reducing Dislocation Densities in GaN and Other Nitrides / C. I. H. Ashby ; C. C. Willan ; N. A. Missert ; P. P. Provencio ; D. M. Follstaedt ; G. M. Peake ; L. Griego
The Formation Mechanism of SiC/Si Interface in the Growth of SiC Films on Si / K. S. Nahm ; K. C. Kim ; C. I. Park ; J. I. Roh
SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors / B. Luo ; J. I. Chyi ; T. E. Nee ; C. M. Lee ; C. C. Chuo ; T. J. Anderson
The Effect of N2 Plasma Damage on DC and RF Characteristics of HEMTs / V. P. Trivedi ; C. H. Hsu ; X. Cao ; C. S. Wu ; M. Hoppe ; J. Sasserath ; J. W. Lee
High Speed Devices for Wireless Applications II
III V Enhancement Mode Field Effect Transistor Technologies for Cellular Applications / J. Costa
Indium Phosphide HBT Device Parameter Extraction for Spice Modeling and Process Optimization / J.-M. Kuo ; M. Melendes ; Y. K. Chen
The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors
Fabrication and Materials Characterization of Pulsed Laser Deposited Nickel Silicide Ohmic Contacts to 4H n-SiC / M. W. Cole ; P. C. Joshi ; C. W. Hubbard ; E. Ngo ; J. D. Demaree ; J. K. Hirvonen ; M. Wood ; M. Ervin ; C. J. K. Richardson ; M. H. Wisnioski
Author Index
Subject Index
Preface
Symposium Organizers
State-of-the-art Program on Compound Semiconductors (XXXIII)
20.

図書

図書
editors, R. Singh ... [et al.] ; [sponsord by] Dielectric Science and Technology and Electronics Divisions
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 226 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-7
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21.

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図書
editors, K.B. Sundaram ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  x, 286 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-7
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Preface
Organizers
Oxide Wear-Out, Reliability, Stress and Interfaces / I:
A Review of Oxide Wearout, Breakdown, and Reliability / D. Dumin
Surface And Interface Study Of Ion Beam Deposited Silicon oxide Thin films / Heinz D. Wazenboeck ; Emmerich Bertagnolli ; Bernhard Basnar ; Juergen Smoliner ; Martin Gritsch ; Herbert Hutter ; Josef Brenner ; C. Tomastik ; Herbert Storri
Study of Inversion Layer Hole Mobility In p-Mosfet During High-field Stressing / R. Jarawal ; D. Misra
Two Limiting Thinnesses Of The Ultrathin Gate Oxide / Samares Kar
SiO[subscript 2] Stress and Interfaces / II:
The Connection Between oxide leakage currents and Si/SiO[subscript 2] Interface Trap Generation / P. M. Lenahan
Charging Damage During Plasma Enhanced Dielectric Deposition / K. Cheung
Kinetics and Mechanisms of Organic Contaminant Interactions at Silicon Surfaces in High Temperature Processes / N. Rana ; P. Raghu ; F. Shadman
SiO[subscript 2] Films and Properties / III:
Remote Plasma Deposited Gate Dielectrics on Si and SiGe Mosfets / T. Ngai ; R. Sharma ; J. Fretwell ; X. Chen ; J. Chen ; W. Brookover ; S. Banerjee
Rapid Thermal Processes of High Permittivity Films on Silicon for ULSI Gate Dielectrics Applications / S. P. Tay ; R. Sharangpani ; Y. Z. Hu
Processing of Thick Thermal Gate Oxides in Trenchs / C. T. Wu ; R. Ridley ; G. Dolny ; T. Grebs ; J. Hao ; S. Suliman ; B. Venkataraman ; O. Awadelkarim ; R. Williams ; P. Roman ; J. Ruzyllo
Electrical Properties of SiO[subscript 2]-Films Prepared by VUV Chemical Vapor Deposition / Y. Motoyama ; J. Miyano ; K. Tosikawa ; Y. Yagi ; K. Kurosawa ; A. Yokotani ; W. Sasaki
SiO[subscript 2] Film Deposition on Different Substrate Materials by Photo- CVD Using Vacuum Ultraviolet Radiation / K. Toshikawa
Silicon Nitrides/ Oxynitrides / IV:
Low Energy Ion Irradiation of Silicon: Compound Formation and Segregation of Impurities / M. Petravic ; J. S. Williams ; P. N. K. Deenapanray
Characteristics of Silicon Oxynitrides Made By ECR Plasmas / J. A. Diniz ; P. J. Tatsch ; J. Swart
Radiation Hardening of Oxynitrides Formed By Low Nitrogen Implantation into Silicon Prior to Oxidation / J. Godoy Fo
Silicon Nitrides/ Oxynitrides II / V:
Material and Process Considerations of Ultra thin Silicon (Oxy) Nitride Films Grown on Silicon and SiO[subscript 2] Surfaces / C. P. D'Emic ; E. P. Gusev ; K. K. Chan ; T. Zabel ; M. Copel ; R. Murphy ; P. Kozolowski ; J. Newbury
Silicon OxyNitride: A Versatile Material for Integrated Optics Application / K. Worhoff ; A. Driessen ; P. V. Lambeck
Characterization of Silicon Oxynitride Thin Films Deposited By ECR-PECVD / C. Simionescu ; J. Wojcik ; H. K. Haugen ; J. A. Davies ; P. Mascher
Silicon Nitrides/ Oxynitrides III / VI:
Characterization of Low- Temperature Magnetoplasma- Grown Si Oxynitride and Si Oxide / H. Ikoma
Advances in Single Wafer Chemical Deposition of Oxide and Nitride films / W. Palmer ; Z. Gabric
High Integrity Direct Oxidation/Nitridation at Low Temperatures Using Radicals / T. Ohmi ; S. Sugawa ; M. Hirayama
Silicon Nitride
Thermally Induced Stress Changes in High Density Plasma Deposited Silicon Nitride Films / R. E. Shah ; H. Baumann ; D. Serries ; M. Mikulla ; R. Keiffer
Effect of Oxygen in Deposited Ultra Thin Silicon Nitride Film on Electrical Properties / K. Muraoka ; K. Kurihara
Influence of Low- energy argon Ion Bombardment and Vacuum Annealing on the Silicon Nitride Surface Properties / I. P. Petrenko ; V. A. Gritsenko ; L. M. Logvinsky ; H. Wong
Authors Index
Subject Index
Preface
Organizers
Oxide Wear-Out, Reliability, Stress and Interfaces / I:
22.

図書

図書
editor, Y. Kuo ; sponsoring divisions, Electronics, Dielectric Science and Technology
出版情報: Pennington, N.J. : Electrochemical Society, c2005  ix, 326 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; 2004-15
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23.

図書

図書
editors, P. C. Chang ... [et al.] ; sponsoring divisions, Electronics and Physical Electrochemistry
出版情報: Pennington, N.J. : Electrochemical Society, c2005  x, 486 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2005-04
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24.

図書

図書
editor, G. K. Celler ; assistant editors, S. Cristoloveanu ... [et al.] ; sponsoring division, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2005  xi, 396 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2005-03
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25.

図書

図書
editors, Evgeni P. Gusev ... [et al.] ; sponsoring divisions, Electronics, Dielectric Science and Technology, and High Temperature Materials
出版情報: Pennington, NJ : Electrochemical Society, c2005  xv, 634 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2005-05
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26.

図書

図書
editors, Cor Claeys ; sponsoring division, Electronics and Photonics
出版情報: Pennington, N.J. : Electrochemical Society, c2005  x, 560 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2005-08
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27.

図書

図書
editors, Anjana Devi ... [et al.] ; sponsoring divisions, High Temperature Materials, Dielectric Science and Technology, and Electronics and Photonics
出版情報: Pennington, NJ : Electrochemical Society, c2005  xviii, 1106 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2005-09
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28.

図書

図書
editors, R.F. Kopf ... [et al.] ; sponsoring divisions, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2003  x, 408 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-11
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目次情報: 続きを見る
Preface
Symposium Organizers
State-Of-The-Art Program on Compound Semiconductors XXXIX
Polarity-Selective Chemical Etching of GaN: From Nanotip Pyramids to Photonic Crystals / H. Ng ; A. Chowdhury ; W. Parz ; N. Weimann
Growth and Characterization of High Quality GaN on Silicon (111) Substrate / L. Chou ; Y. Chueh ; S. Chiou ; S. Gwo
Growth and Characterization of InGaN Quantum Dots in InGaN/GaN Superlattices / C.-P. Liu ; R. Chen ; Y.-L. Lai
Long-wavelength emission of GaInNAs Quantum Dots Grown on GaAs (001) / C.W. Tu
Development of 850nm VCSELs for OC-192 Applications / H.-C. Kuo ; Y.-H. Chang ; T.-H. Hseuh ; F. Lai ; S.-C. Wang
Development of InGaAsN-based 1300 nm VCSELs / Y.-L. Chang ; T. Takeuchi ; M. Leary ; D. Mars ; A. Tandon ; R. Twist ; S. Belov ; D. Bour ; M. Tan ; D. Roh ; Y.-K. Song ; L. Mantese ; A. Luan
Influence of a Low Composition InxGal-xN/GaN Superlattice on the Optical Properties of Blue and Green InxGal-xN Based LEDs / J. Ramer ; D. Florescu ; D. Lee ; E. Armour
Dramatic Improvements in AlGaN/GaN HEMT Device Isolation Characteristics After UV-Ozone Pre-Treatment / N. Moser ; R. Fitch ; D. Via ; A. Crespo ; M. Yannuzzi ; G. Jessen ; J. Gillespie ; B. Luo ; F. Ren ; C. Abernathy ; S. Pearton ; B. Gila
Electric Field Modulation of ZnO Film Conductance in ZnO-Based FET Structures / Y.W. Kwon ; D. NOrton
Growth of Polycrystalline HgSe by Electrochemical Atomic-layer Epitaxy (EC-ALE) / M. Mathe ; S. Cox ; U. Happek ; J. Stickney
Effect of the Intermetallic Compounds on the Joint Strength of the Optical Module / N.-K. Kim ; K.-S. Kim ; N.-H. Kim ; E.-G. Chang
Fabrication of nTiO2Thin Films by SPD Method for Efficient Photosplitting of Water / S. Khan ; S. Smith
Resource Conservation and Fab Cost Saving Through DIW and Chemical Consumption Reduction in Pre-diffusion Cleaning Processes / M. Strada
Growth and Characterization of High-Ge Content SiGe Virtual Substrates / M. Erdtmann ; M. Carroll ; J. Carlin ; T. Langdo ; R. Westhoff ; C. Leitz ; V. Yang ; M. Currie ; T. Lochtefeld ; K. Petrocelli ; C. Vineis ; H. Badawi ; M. Bulsara
Spray Pyrolytically Deposited Zn-doped p-Fe2O3 for Photoelectrolysis of Water / W. Ingler Jr.
Characterization of Silicon Carbide Electrochemical Etch in Hydrofluoric Acid Aqueous Solution / G. D'Arrigo ; C. Bongiorno ; V. Raineri
Surface Pitting and Porous Layer Growth on n-InP Anodes / C. O'Dwyer ; M. Serantoni ; D.N. Buckley
UHV-EC Studies of Wet Cleaning Procedures for GaAs Substrates for Electrodeposition / M. Muthuvel ; L. Ward
Crystal Quality Determination of Wide Bandgap Materials Using X-ray Techniques / P. Feichtinger ; K. Bowen ; B. Poust ; M. Goorsky ; M. Wojtowicz ; R. Sandhu
Mg Doping Concentration Influenced by Polarity of GaN Layer in InGaN/GaN Superlattice Structure / Y.-W. Lin
Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics symposium IV
High Performance Wide-Bandgap Photonic and Electronic Devices Grown by MBE / A.M. Dabiran ; A. Osinsky ; B. Hertog ; M.A. Kauser ; P.P. Chow ; V. Kumar ; I. Adesida
High Efficiency Nitride LEDs for use in Solid State Lighting Applications / A.J. Fischer ; D.D. Koleske ; A.A. Allerman ; M.H. Crawford ; K.H.A. Bogart ; C.C. Mitchell ; D.M. Follstaedt ; K.C. Cross ; K.W. Fullmer ; J.J. Figiel
Optical Properties of GaN/AlN Quantum Dots grown by Molecular Beam Epitaxy / A. Neogi
Cathodoluminescence Studies of Electron Injection-Induced Effects in III-Nitrides / William Burdett ; Leonid Chernyak ; Andre Osinski
Mg Surface Treatment for Optimizing Contact and Bulk Properties of p-type GaN Grown by Ammonia- Molecular-Beam Epitaxy / H. Tang ; J.A. Bardwell ; J. B. Webb ; S. Rolfe ; S. Moisa ; I. Sproule ; S. Raymond
Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics / B.P. Gila ; J. Kim ; R. Mehandru ; J.R. LaRoche ; A.H. Onstine ; C.R. Abernathy ; S.J. Pearton
Fabrication, Characterization and Applications of AlInGaN Light-Emitting Diodes / X. A. Cao ; S. D. Arthur ; A. Ebong ; S. F. LeBoeuf ; D. W. Merfeld
High Energy and Spatial Resolution EELS from GaN / I. Arslan ; S. Ogut ; N. D. Browning
Localized Quantum State Luminescence from Wide Bandgap ZnS and GaN Thin Films / Nigel Shepherd ; Ajay Kale ; William Glass ; Joo Han Kim ; David DeVito ; Mark Davidson ; Paul H. Holloway
Laser-Metallized Silicon Carbide Schottky Diodes for Millimeter Wave Detection and Frequency Mixing / I. A. Salama ; C. F. Middleton ; N. R. Quick ; G. D. Boreman ; A. Kar
Surface State Characterization Methods for SiO[subscript 2] on 4H-SiC / J. R. LaRoche ; J. W. Johnson ; B. S. Kang ; Y. Irokawa ; S. J. Pearton ; G. Chung
The Effect of External Strain on the Conductivity of AlGaN/GaN High Electron Mobility Transistors / S. Kim ; K. Baik ; B. P. Gila ; C. R. Abernathy ; C. -C. Pan ; G. -T. Chen ; J. -I. Chyi ; V. Chandrasekaran ; M. Sheplak ; T. Nishida ; S. N. G. Chu
High Performance AlGaN/GaN HEMTs with Recessed Gate / Yoshiaki Sano ; Katsuaki Kaifu ; Juro Mita ; Hideyuki Okita ; Tomohiko Sagimori ; Takashi Ushikubo ; Hiroyasu Ishikawa ; Takashi Egawa ; Takashi Jimbo
GaN Power Rectifiers and Field-Effect Transistors on Free-Standing GaN Substrates / Jihyun Kim ; S. S. Park ; Y. J. Park ; K. H. Baik|cS. J. Pearton
Chemical Sensing with GaN Devices / Martin Eickhoff ; Georg Steinhoff ; Olaf Weidemann ; Martin Hermann ; Barbara Baur ; Gerhard Mueller ; Martin Stutzmann
Magnetic Doping of III-V Nitrides and Novel Room Temperature Sensing Applications / J. M. Zavada ; R. M. Frazier ; J. Kelly ; R. Rairigh ; A. F. Hebard ; J.Y. Lin ; H.X. Jiang
Optimization of GaMnN Growth Conditions for Novel Spintronic Applications / G.T. Thaler ; R.M. Frazier ; R. Rairaigh ; A. Hebard
Growth of MgCaO on GaN / A. H. Onstine ; A. Herrero ; B. F. Ren
In-Situ Chemical Surface Treatments For The Removal of AlN/SiC Interfacial Contamination / D.O. Stodilka ; E. Lambers
Design, Fabrication, and Evaluation of High Performance Diamond-Based Power Diodes / Yasar Gurbuz ; Weng P. Kang ; Jimmy L. Davidson
Ferromagnetism In Mn- And Sn-Doped ZnO Films Grown By Pulsed Laser Deposition / M. Ivill ; D.P. Norton ; A.F. Hebard
Synthesis and Characterization of Ferromagnetic AlN and AlGaN Layers / G. T. Thaler ; M. L. Nakarmi ; J. Y. Lin ; H. X. Jiang ; R. G Wilson
Electronic Structure Of GaNP: Insights From Optical Studies / A. Buyanova ; W.M. Chen ; A. Polimeni ; M. Capizzi
Author Index
Subject Index
Preface
Symposium Organizers
State-Of-The-Art Program on Compound Semiconductors XXXIX
29.

図書

図書
editors, S. Kar ... [et al.] ; sponsoring divisions: Dielectric Science and Technology, Electronics
出版情報: Pennington, NJ : Electrochemical Society, c2003-c2004  2 v. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-28, 2003-22
所蔵情報: loading…
目次情報: 続きを見る
Symposium Chairs
Preface
Table of Contents
Facts about the Electrochemical Society
High-K Gate Dielectrics - General / Chapter 1:
Challenges for the Integration of High-K Gate Dielectrics / M. Quevedo-Lopez ; B. E. Gnade ; R. M. Wallace
Correlation between the Material Constants and a Figure of Merit for the High-K Gate Dielectrics / S. Kar ; R. Singh
Binary Oxide High-K Gate Dielectrics / Chapter 2:
High Dielectric Constant Gate Insulator Technology using Rare Earth Oxides / H. Iwai ; S. Ohmi ; S. Akama ; C. Ohshima ; I. Kashiwagi ; A. Kikuchi ; J. Taguchi ; H. Yamamoto ; I. Ueda ; A. Kuriyama ; J. Tonotani ; Y. Kim ; Y. Yoshihara ; H. Ishiwara
High Quality ZrO[subscript 2] Thin Films on [left angle bracket]100[right angle bracket] Si Substrates as a Gate Dielectric Material: Processing and Characterization / M. Fakhruddin ; K. F. Poole ; S. V. Kondapi
HfO[subscript 2] Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium / J. Schaeffer ; N. V. Edwards ; R. Liu ; D. Roan ; B. Hradsky ; R. Gregory ; J. Kulik ; E. Duda ; L. Contreras ; J. Christiansen ; S. Zollner ; P. Tobin ; B.-Y. Nguyen ; R. Nieh ; M. Ramon ; R. Rao ; R. Hegde ; R. Rai ; J. Baker ; S. Voight
Electrical Characteristics Improvement of Dy[subscript 2]O[subscript 3] Thin Films by In-Situ Vacuum Anneal
Electrical and Physical Characterization of Zirconium-Doped Tantalum Oxide Films / J.-Y. Tewg ; J. Lu ; Y. Kuo ; B. Schueler
Effect of Deposition Sequence and Plasma Treatment on ALCVD HfO[subscript 2] n-MOSFET Properties / C. Lim ; A. Hou ; J. Gutt ; S. Marcus ; C. Pomarede ; E. Shero ; H. de Waard ; C. Werkhoven ; L. Chen ; J. Tamim ; N. Chaudhary ; G. Bersuker ; J. Barnett ; C. Young ; P. Zeitzoff ; G. A. Brown ; M. Gardner ; R. W. Murto ; H. R. Huff
Characteristics of High-K Gd[subscript 2]O[subscript 3] Films Deposited on Different Orientation of Si Substrate
Hafnium-Doped Tantalum Oxide High-K Dielectrics / P. C. Liu
Silicate/Aluminate High-K Dielectrics and Reliability / Chapter 3:
Defect Generation in High-K Dielectric Stacks: Characterization and Modelling / M. Houssa ; J. L. Autran ; V. V. Afanas'ev ; A. Stesmans ; M. M. Heyns
Ultra-Thin Zirconium and Hafnium Silicate Films Deposited by MOCVD on Si(100) / D. Landheer ; X. Wu ; H.-W. Chen ; M.-S. Lee ; S. Moisa ; T.-Y. Huang ; T.-S. Chao ; Z.-H. Lu ; W. N. Lennard
Effect of Post-Annealing on the Electrical Properties of ZrO[subscript 2] and ZrAlO / M. Mansouri ; Y.-L. Chiou ; Y. Ono ; S. T. Hsu
Improved Scalability of High-K Gate Dielectrics by using Hf-Aluminates / T. H. Hou ; H. de Warrd
Reliability and Plasma-Induced Degradation of High-K Gate Dielectrics in MOS Devices / K.-S. Chang-Liao ; P.-J. Tzeng
Stability of High-K Thin Films for Wet Process
High-K Gate Dielectric Interfaces / Chapter 4:
Nitrogen Incorporation and High Temperature Forming Gas Anneal For High-K Gate Dielectrics / J. C. Lee ; R. Choi ; K. Onishi ; H. Cho ; C. Kang ; S. Krishnan
Integrity of Hafnium Silicate/Silicon Dioxide Ultrathin Films on Silicon / J. Morais ; L. Miotti ; G. V. Soares ; R. Pezzi ; K. P. Bastos ; M. C. M. Alves ; I. J. R. Baumvol ; A. L. P. Rotondaro ; J. J. Chambers ; M. R. Visokay ; L. Colombo
Suppression of Silicidation for Zirconia, Hafnia, and Silicate on Silicon by Helium Annealing / K. Muraoka
Analysis of Electrically Active Defects at Si(100)-HfO[subscript 2] Interface / B. J. O'Sullivan ; E. O'Connor ; P. K. Hurley ; M. Modreanu ; F. Roussel ; H. Roussel ; M. A. Audier ; J. P. Senateur ; Q. Fang ; I. W. Boyd ; C. Jimenez ; T. Leedham
Thermal Stability of the HfO[subscript 2]/SiO[subscript x]N[subscript y]-Si Interface / R. P. Pezzi ; H. Boudivov ; R. I. Hegde ; H. H. Tseng ; P. J. Tobin
Non-Contact Electrical Characterization of High-Dielectric-Constant (High-K) Materials / P. Y. Hung ; B. Foran ; A. Diebold ; X. Zhang ; C. Oroshiba
High-K Capacitor Dielectrics / Chapter 5:
Ruthenium Bottom Electrode Prepared by Electroplating for High-K DRAM Capacitor / J. J. Kim ; O. J. Kwon ; M. S. Kang
Regional Charge Transport Characteristics of Integrated Metal-Oxide MIM Capacitors / D. R. Roberts ; S. Kalpat ; T. P. Remmel ; M. A. Said ; M. V. Raymond ; R. Ramprasad ; E. D. Luckowski ; M. Miller
High Capacitance and Low Leakage Ta[subscript 2]O[subscript 5] MIM Capacitor for DRAM / W. Li ; G. S. Sandhu
High Dielectric Constant Metal Oxide Films via Photochemical Metal Organic Deposition (PMOD) Process / S. P. Mukherjee ; P. J. Roman, Jr. ; H. O. Madsen ; L. G. Svendsen ; M. A. Fury ; S. J. Barstow ; A. Jeykumar ; C. L. Henderson
Seed Layer Free Ruthenium Precursor for MOCVD / N. Oshima ; T. Shibutami ; K. Kawano ; S. Yokoyama ; H. Funakubo
Low-Leakage Tantalum Oxide MIM Capacitor Module for Cu-Interconnected RF BiCMOS Technology / C. C. Barron ; M. Sadd ; P. Zurcher
Author Index
Subject Index
Interface Issues
Tailoring High-K/Silicon Interface for Nanoelectronics Applications / R. Puthenkovilakam ; J. Chang
Reducing the Interfacial Formation of SiO[subscript x] in HfO[subscript 2] MOS Structures: A Study in Pre-Deposition Cleaning and Surface Oxidation, and Post-Deposition Annealing / H. Harris ; K. Choi ; N. Biswas ; I. Chary ; L. Xie ; N. Mehta ; G. Kipshidze ; M. White ; H. Temkin ; S. Gangopadhyay
Influence of the 5 A TaN[subscript x] Interface Layer on Dielectric Properties of the Zr-Doped TaO[subscript x] High-K Film
Plasma Modification of Hf Based High-K Dielectrics: Effect of Nitridation and Silicon Nitride Deposition / W. Tsai ; J. W. Maes ; H. De Witte ; J. Chen ; A. Delabie ; R. Carter ; O. Richard ; M. Caymax ; T. Conrad ; E. Young ; S. DeGendt
Method for Determining the Effectiveness of Silicon Nitride as a Barrier Layer for HfO[subscript 2] / H. Kraus ; J. Snow ; P. van Doorne ; W. Fyen ; P. W. Mertens ; F. Kovacs
Effect of Surface Preparation on High-K Gate Stack Device Performance / N. Moumen ; B. H. Lee ; J. Peterson
Deposition Methods and Processing - I
Some Recent Developments in the Metalorganic Chemical Vapor Deposition of High-K Dielectric Oxides / P. R. Chalker ; A. C. Jones
A Comparative Study of Erbium Oxide and Gadolinium Oxide High-K Dielectric Thin Films Grown by Low-Pressure Metalorganic Chemical Vapour Deposition (MOCVD) using [beta]-Diketonates as Precursors / M. P. Singh ; C. S. Thakur ; K. Shalini ; T. Shripathi ; N. Bhat ; S. A. Shivashankar
HfO[subscript x]N[subscript y] and HfSi[subscript x]O[subscript y]N[subscript z] High-K Layers Deposited by MOCVD in Mixed Gas Flows of N[subscript 2]O and O[subscript 2] / C. Zhao ; S. Van Elshocht ; T. Conard ; Z. Xu ; S. DeGendt|cM. Heyns
Electrical Characterization - I
Internal Photoemission over High-K Insulating Barriers / V. V. Afanas'ev
Leakage Current Behavior of HfO[subscript 2] Thin Films / M. N. Jones ; Y. W. Kwon ; D. P. Norton
Experimental Values of a Quantization Index of the Accumulation Layers of Different High-K Gate Dielectrics / T. Kachru ; M. Bhagat
Deposition Methods and Processing - II
Tensile Strain in Si due to Expansion of Lattice Spacings in CeO[subscript 2] Epitaxially Grown on Si (111) / Y. Nishikawa ; D. Matsushita ; N. Satou ; M. Yoshiki ; T. Schimizu ; T. Yamaguchi ; H. Satake ; N. Fukushima
Selective Wet Etching of Hf-based Layers / M. Claes ; V. Paraschiv ; H. Boutkabout ; T. Witters ; E. Rohr ; B. Coenegrachts ; J. Vertommen ; R. Lindsay ; W. Boullart ; M. Heyns
Alternating Pulse Deposition of High-K Metal Oxide Thin Films using Hf(NO[subscript 3])[subscript 4] as a Metal and an Oxygen Source with Multiple In-Situ Annealing / J.F. Conley, Jr. ; D. Tweet ; G. Stecker ; R. Solanki ; W.W. Zhuang
Improvement of Electrical Properties of Alumina Films by Nitrogen Added Plasma Enhanced Atomic Layer Deposition / J.W. Lim ; S.J. Yun ; J.H. Lee
The Role of TXRF in the Introduction of High-K Materials into IC Processing / D. Hellin ; B. Onsia ; C. Vinckier
Metal Gates
Characterization of Resistivity and Work Function of Sputtered-TaN Film for Gate Electrode Applications / C. S. Kang ; H.-J. Cho ; Y. H. Kim ; C. Y. Kang ; A. Shahriar ; C. H. Choi ; S. J. Rhee
NbO as a Gate Electrode for NMOSFETs / W. Gao ; J. F. Conley
A Novel Iridium Precursor for MOCVD / M. Takamori ; T. Yamakawa ; S. Watari ; H. Fujisawa ; M. Shimizu ; H. Niu
Advanced Ruthenium Precursors for Thin Film Deposition / C. A. Hoover ; M. M. Litwin ; J. Peck ; G. B. Piotrowski ; D. M. Thompson
Silicates and Effects of Post-Deposition Treatments / Chapter 6:
Effects of NH[subscript 3] Annealing on High-K HfSiON/HfO[subscript 2] Gate Stack Dielectrics
Nitridation of Hafnium Silicate Thin Films Deposited by Atomic Layer Deposition / Y. Senzaki ; H. Chatham ; R. Higuchi ; C. Bercaw ; J. DeDontney
Thermal Stability and Compatibility with Cmos Processing / Chapter 7:
Scaling of Hf-Based Gate Dielectrics--Integration with Polysilicon Gates / W. Deweerd ; V. Kaushik ; A. Kerber ; S. Kubicek ; M. Niwa ; L. Pantisano ; R. Puurunen ; L. Ragnarsson ; T. Schram ; Y. Shimamoto ; W. Vandervorst
Suppression of Silicidation in Poly-Si/High-K Insulator/SiO[subscript 2]/Si Structure by Helium Through Process
Effect of Post Metallization Annealing for La[subscript 2]O[subscript 3] Gate Thin Films on Electrical Characteristics / S.-I. Ohmi ; K. Tsutsui
Defect Characterization and Reliability / Chapter 8:
Photoelectron Spectroscopy Investigation of High K Dielectrics / K. Demirkan ; A. Mathew ; R. L. Opila
Soft Breakdown Phenomena in High-K Gate Dielectrics
Low Frequency Noise Study of n-MOSFETs with HfO[subscript 2] Gate Dielectric / E. Simoen ; A. Mercha ; C. Claeys
Simulations of Bias Temperature Instabilities in p-MOSFETs with Hf[subscript x]SiO[subscript y]-Based Gate Dielectrics / C. Bizzari
The Effects of Forming Gas Anneal Temperature and Dielectric Leakage Current on TDDB Properties of HfO[subscript 2] Devices / Y.-H. Kim
Charge Trapping and Electron Mobility Degradation in MOCVD Hafnium Silicate Gate Dielectric Stack Structures / C. D. Young ; T.H. Hou ; E. Cartier ; P. Lysaght ; J. Bennett ; C.-H. Lee ; S. Gopalan ; G. Groeseneken
Electrical Characterization - II / Chapter 9:
High Hole Mobility of Al[subscript 2]O[subscript 3] MOSFETs on Dislocation Free Ge-on-Insulator Wafers / A. Chin ; D.S. Yu ; C.H. Wu ; C.H. Huang ; W.J. Chen
Extraction of the High-K Gate Dielectric Parameters from the Capacitance Data
Characteristics of Thermally Evaporated HfO[subscript 2] / R. Garg ; N. A. Chowdhury ; R. K. Jarwal ; D. Misra ; P. K. Swain ; M. Bhaskaran
Characterization of High-K Dielectric Stacks for Flash Memory Applications / Y.L. Chiou
Electrical Characteristics of High-K Stack Gate Dielectric Thin Films with La[subscript 2]O[subscript 3] as a Buffer Layer
Low-frequency Noise Characteristics of MISFETs with La[subscript 2]O[subscript 3] Gate Dielectrics / H. Sauddin
Investigation of High-K Dielectric Properties with the Non-Contact SASS Technique / M. Wilson ; J. Lagowski ; J. D'Amico ; P. Edelman ; A. Savtchouk
Electrical Characteristics of High-K La[subscript 2]O[subscript 3] Thin Film Deposited by E-Beam Evaporation Method
Ferroelectric Layers and Memory Devices / Chapter 10:
Reduction in Programming Voltage of Non-Volatile Flash Memory Using High-K Dielectric Stacks / Y. L. Chiou
Reaction Mechanism of a Titanium Source, Ti(MPD)(METHD)[subscript 2], in Metalorganic Chemical Vapor Deposition of (Ba,Sr)TiO[subscript 3] Films / T. Nishimura ; T. Nakamura ; K. Tachibana
Characteristics of (Pb, Sr)TiO[subscript 3] Films Post Treated by Low Temperature Technologies / J.-L. Wang ; C.-K. Jan ; D.-C. Shye ; M.-W. Kuo ; H.-C. Cheng
Symposium Chairs
Preface
Table of Contents
30.

図書

図書
editors, J. Ruzyllo ... [et al.] ; sponsoring divisions: Electronics, Dielectric Science and Technology
出版情報: Pennington, NJ : Electrochemical Society, c2004  xi, 436 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-26
所蔵情報: loading…
目次情報: 続きを見る
Preface
The Science and Technology of the Functional Water / M. Toda ; S. Uryuu
Single Wafer Cleaning
Effective Post-Etch Residue Removal on Low-k Films Using Single Wafer Processing / E. Kesters ; J. Ghekiere ; P. Van Doorne ; G. Vereecke ; P.W. Mertens ; M.M. Heyns
Aqueous Single Pass Single Wafer Al/Via Cleaning / S. Verhaverbeke ; C. Beaudry ; P. Boelen
Improved Rinsing Efficiency on Post-Etch Residue Wet Clean for Cu/Low-k Damascene Structures / C.K. Chang ; C.F. Tsang ; V. Nguyen ; Q. Zhang ; T.H. Foo
Single Wafer Wet Cleaning Based on Short Cycle Time, Ambient Temperature and a Small Amount of Chemical / K.-I. Sano ; A. Izumi
Innovative Surface Preparation Solutions for Sub-90 nm Ic Devices / E. Baiya ; J. Rosato ; R. Yalamanchili
Predictive Model-Based Control of Critical Oxide Etches for Sub-100 nm Processes in a Single Wafer Wet Processing System / Y. Lu ; M.R. Yalamanchili
Non-IPA Wafer Drying Technology for Single-Spin Wet Cleaning / K. Miya ; T. Kishimoto
Front End of the Line Cleaning
Integration of High-k Gate Dielectrics--Wet Etch Cleaning and Surface Conditioning / S. De Gendt ; S. Beckx ; M. Caymax ; M. Claes ; T. Conard ; A. Delabie ; W. Deweerd ; D. Hellin ; H. Kraus ; B. Onsia ; V. Parishev ; R. Puurunen ; E. Rohr ; J. Snow ; W. Tsai ; S. Van Elshocht ; J. Vertommen ; T. Witters ; M. Heyns
Study of the Effect of Silicon Surfce Treatment on Eot in High-k Dielectric Mos Gate Stack / K. Chang ; K. Shanmugasundaram ; D.-O. Lee ; P. Roman J. Shallenberger ; F.-M. Chang ; J. Wang ; R. Beck P. Mumbauer ; R. Grant ; J. Ruzyllo
Atomic Layer Deposition of Silicon Nitride Barrier Layer for Self-Aligned Gate Stack / C. Finstad ; A. Muscat
Sub-Nanometer High -k Gate Stack Scaling Using the Hf-Last/NH[subscript 3] Anneal Interface / J. Peterson ; J. Barnett ; C. Young ; A. Hou ; J. Gutt ; S. Gopalan ; C.H. Lee ; H.J. Li ; N. Moumen ; N. Chaudhary ; B.H. Lee ; G. Bersuker ; P. Zietzoff ; G.A. Brown ; P. Lysaght ; M. Gardner ; R.W. Murto ; H. Huff
Improvements in Advanced Gate Oxide Electrical Performance by the Use of an Ozonated Water Clean Rpocess / D. Riley
Effect of Rie Sequence and Post-Rie Surface Processing on the Reliability of Gate Oxide in a Trench / T. Grebs ; R. Ridley ; C.-T. Wu ; R. Agarwal ; J. Mytych ; W. Dimachkie ; G. Dolny ; J. Michalowicz
Minimizing Oxide Loss in Immersion SC-1 Process / J. Butterbaugh ; S. Loper ; T. Wagener
Performance of an Advanced Front of the Line Clean Compared to the Process of Record Clean in a Manufacturing Environment / R. Novak ; I. Kashkoush ; J. Nolan ; J. Hunter ; J. Straight
The Mechanism of Poly-Si Etching During Poly/W Gate Cleaning by Fluorine Based Cleaning Solution / S.Y. Kim ; S.J. Choi ; C.K. Hong ; W.S. Han ; J.T. Moon
Physical and Chemical Methods of Particle Removal
Mechanisms of Particle Removal During Brush Scrubber Cleaning / K. Xu ; R. Vos ; P. Mertens ; C. Vinckier ; J. Fransaer
Evaluation of Megasonic Cleaning Systems for Particle Removal Efficiency and Damaging / F. Holsteyns ; J. Veltens ; M. Lux ; S. Arnatus ; K. Kenis
Mechanical Resistance of Fine Microstructures Related to Particle Cleaning Mechanisms / F. Tardif ; O. Raccurt ; J.C. Barbe ; F. De Crecy ; P. Besson ; A. Danel
Evaluation of Megasonic Cleaning Processes / A. Riskin ; A. Maes
Study of the Cleaning Control Using a Megahertz Nozzle Sound Pressure Monitor System for Single-Plate Spin Cleaners / H. Fujita ; N. Hayamizu ; T. Goshizono ; N. Sakurai
Experimental Validation of a Science-Based Undercut Removal Model for the Cleaning of Micron-Scale Particles from Surfaces / G. Kumar ; S. Beaudoin
Resonance Damage of Semiconductors by Acoustic Excitation / K. Christenson
Substrate Damage-Free Laser Shock Cleaning of Particles / J.G. Park ; A. Busnaina ; J.M. Lee ; S.Y. You
Effect of Surfactants on Particle Contamination of Silicon Surface in HF Solutions / T. Vehmas ; H. Ritala ; O. Anttila
Supercritical, Cryogenic, and Dry Cleaning
In Situ Process for Periodic Cleaning of Low Temperature Nitride Furnaces / D. Foster ; R. Herring ; J. Ellenberg ; A. Johnson ; C. Hartz
Making Supercritical Co[subscript 2] Cleaning Work: Proper Selection of Co-Solvents and Other Issues / A. Sehgal
Chemical Additive Formulations for Silicon Surface Cleaning in Supercritical Carbon Dioxide / M. Korzenski ; C. Xu ; T. Baum ; K. Saga ; H. Kuniyasu ; T. Hattori
Surfactant Enabled Supercritical Co[subscript 2] Cleaning Processes for Beol Applications: Post-Barrier Breakthrough / J. DeYoung ; S. Gross ; M. Wagner ; Z. Hatcher ; C. Ma
Co[subscript 2]--Expanded Liquids as Alternatives to Conventional Solvents for Resist and Residue Removal / M. Spuller ; D. Hess
Photoresist Stripping Using Supercritical Co[subscript 2]--Based Processes / V. Perrut ; C. Millet ; J. Daviot ; M. Rignon
Post-Etch Cleaning of 300 mm Dual Damascene Low-k Dielectric Structures Using Supercritical Co[subscript 2] / R.B. Turkot, Jr. ; V.S. RamachandraRao ; S.A. Iyer ; S.C. Clark
Impact of Phase Behavior on Photresist Removal Using Co[subscript 2] Based Mixtures / G. Levitin ; S. Myneni
Copper Low-k Contaminantion and Post Etch Residues Removal Using Supercritical Co[subscript 2]-Based Processes / L. Broussous ; O. Renault
Water Removal and Repair of Porous Ultra-Low k Films Using Supercritical Co[subscript 2] / B. Xie
Cleaning of Fragile Fine Structurers With Cryogenic Nitrogen Aerosols / H. Saito ; A. Munakata ; D. Ichishima ; T. Yamanishi ; A. Okamoto
Post-CMP Cleaning
Advanced Front end of the Line Clean for Post-CMP Processes / T. Nolan ; D. Nemeth
Low Carbon Contamination and Water Mark Free Post-CMP Cleaning of Hydrophobic Osg Dielectrics / K. Bartosh ; E. Brown ; S. Naghshineh ; D. Peters ; E. Walker
Adhesion and Removal of Silica and Alumina Slurry Particles During Cu CMP Process / J. Park ; A.A. Busnaina
Post-Copper CMP Cleaning Galvanic Phenomenon Investigated by Eis / C. Gabrielli ; E. Ostermann ; H. Perrot ; S. Mege
Aqueous Cryogenically Enhanced Post-Copper CMP Cleaning / S. Banerjee ; A. Via ; S. Joshi ; J. Eklund
Organic and Metal Contaminant Removal
Characterizing Etch Residue Removal From Low-k Ild Structures Using Aqueous and Non-Aqueous Chemistries / J. Moore ; C. Meuchel
Reversing of Silicon Surface Aging by Lamp Cleaning / J. Shallenberger
Advanced Photo Resist Removal Using O[subscript 3] and Moist Upw in Semiconductor Production / G. Philit ; L. von Aswege ; M. Madore ; K. Wolke ; M.-C. Clech ; E. Asselin-Degrange ; A. Chabli ; D. Louis
Cleaning Chemistry with Complexing Agents (CAs): Ca Degradation Monitoring by UV/VIS Spectroscopy / O. Doll ; B. Kolbesen
Additive Technologies for Sub 100 nm Device Cleaning / H. Morinaga ; A. Itou ; H. Mochizuki ; M. Ikemoto
Degradation of Oxide Properties Caused by Low-Level Metallic Contamination / A. Hoff ; E. Oborina ; S. Aravamudhan ; A. Isti
Cleaning Chemistry with Complexing Agents (CAs): Decomposition of CAs in Hydrogen Peroxide and Apm Studied with Hplc / S. Metzger ; B.O. Kolbesen
Cleaning of Metal Gate Stacks for the Sub 90 nm Technology Node / K. Vermeyen ; W. Fyen ; F. Kovacs
Passivation of Aluminum and Aluminum Copper Alloys in Aqueous Acid / I. Rink ; M. Knotter
Behaviour of Aluminum in Ozonated Water, optical and Electrochemical Study / A. Pehkonen ; K. Solehmainen ; L. Gronberg
Influence of Aluminum Bond Pad Suraface Condition on Probe Ability / K. Gunturu ; C. Hatcher ; K. Burnside ; T. Corsetti ; R. Lappan ; J. Prasad
Open Circuit and Galvanostatic Behavior of Copper Oxidized and Reduced in Various Solutions / M. Hughes
Author Index
Subject Index
Preface
The Science and Technology of the Functional Water / M. Toda ; S. Uryuu
Single Wafer Cleaning
31.

図書

図書
editors, E. J. P. Santos, R. P. Ribas, J. Swart ; sponsoring division, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2004  xv, 398 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2004-03
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32.

図書

図書
editors, L. Cook ... [et al.] ; sponsoring divisions, Electronics and Photonics, Dielectric Science and Technology, High Temperature Materials
出版情報: Pennington, NJ : Electrochemical Society, c2006  ix, 334 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-31
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33.

図書

図書
editors, H. Baumgart ... [et al.] ; sponsoring division, Electronics and Photonics
出版情報: Pennington, N.J. : Electrochemical Society, c2006-  v. ; 23 cm
シリーズ名: ECS transactions ; vol. 3, no. 6, vol. 16, no. 8
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34.

図書

図書
editors, K. Kondo ... [et al.] ; sponsoring divisions, Electrodeposition, Dielectric Science and Technology, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2005  ix, 406 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-08
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35.

図書

図書
editors, C.L. Claeys ... [et al.] ; sponsoring division, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2004  xii, 438 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2004-05
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36.

図書

図書
editors, C. L. Claeys, W. Wong-Ng, K. M. Nair
出版情報: Pennington, NJ : Electrochemical Society, c2004  x, 318 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-27
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目次情報: 続きを見る
Preface
Low Temperature Electronics
HALO Effects on 0.13 [mu]m Floating-Body Partially Depleted SOI n-MOSFETs in Low Temperature Operation / J.A. Martino ; M. A. Pavanello ; E. Simoen ; C. Claeys
Emerging Double-gate MOS Device Technology / E. Suzuki ; Y. Liu ; M. Mashara ; K. Ishii
New Insights on the Cryogenic Self-Heating of Silicon MOSFETs: Thermal resistance of the Ceramic Package / F. J. De la Hidalga-W ; F. J. Cortes-P ; M. J. Deen
High Speed Conversion of Picosecond, Millivolt Pulse Signals to CMOS Voltage Levels / T. Van Duzer ; S. R. Whiteley ; X. Meng ; Q. Liu ; N. Yoshikawa
Operation of Double Gate Graded-Channel Transistors at Low Temperatures / J. A. Martino ; T. M. Chung ; A. Kranti ; J.-P. Raskin ; D. Flandre
Electrical Properties of a Boron Doped Amorphous Silicon Bolometer Operating at Low Temperatures / A. Heredia-J ; W. A. Torres-J ; A. Jaramillo-N
Cryogenic Operation of High-Voltage IGBTs / E. K. Mueller ; O. M. Mueller ; M. J. Henessy
Ge Semiconductor Devices for Cryogenic Power Electronics--IV / R. R. Ward ; W. J. Dawson ; L. Zhu ; R.K. Kirschman ; R. L. Patterson ; J. E. Dickman ; A. Hammoud
Analog Power and Digital Circuits at Cryogenic Temperatures for Space / V.J. Kapoor ; A. J. Menezes ; A. Vijh ; R.L. Patterson
SiGe Semiconductor Devices for Cryogenic Power Electronics / R. K. Kirschman ; O. Mueller
Liquid Helium Temperature Irradiation Effects on the Operation of 0.7 [mu]m CMOS Devices for Cryogenic Space Applications / A. Mercha ; Y. Creten ; J. Putzeys ; P. Mercken ; P. De Moor ; C. Van Hoof ; A. Mohammazadeh ; R. Nickson
Silicon Based Electronics: From Physical Curiosity to Quantum Computing
Low-Temperature Performance of Ultimate Si-Based MOSFETS / J. Jomaah ; G. Ghibaudo ; S. Cristoloveanu ; A. Vandooren ; F. Dieudonne ; J. Pretet ; F. Lime ; K. Oshima ; B. Guillaumot ; F. Balestra
Room-Temperature Synthesis and Characterization of Pure and Co-Doped ZnO / A. Manivannan ; G. Glaspell ; L. Riggs ; S. Underwood ; M.S. Seehra
Low Temperature Cofired Ceramic (LTCC) Based Electronic Devices
Processing and Reliability
Process and Material Challenges Associated with the Next Generation of LTCC Based Products / E. Elvey ; V. Wang ; M. Folk ; C. Tan ; F. Barlow ; A. Elshabini
Novel LTCC Fabrication Techniques Applied to a Rolled Micro Ion Mobility Spectrometer / K. Peterson ; S. Rhode ; K. Pfeifer ; T. Turner
Design of Integrated Modules for Wireless and RF Applications Using Multi-Mix Microtechnology and Green Tape LTCC Materials / J. J. Logothetis ; D. I. Amey ; T. P. Mobley
Plating to LTCC / T. Bloom ; F. Lautzenhiser ; M. Rine
Robocast High Zirconia Content (Pb,La,Zr,Ti)O[subscript 3] Dielectrics / D. Williams ; B. Tuttle ; J. Cesarano ; M. Rodriguez
Thermal Management Using Low Temperature Cofire Ceramic (LTCC) / W. K. Jones ; M. Zampino
Thermomechanical Reliability of LTCC Solder Attachments / Chia-Yu Fu
Interfacial Reactions in LTCC Materials / L. P. Cook ; W. Wong-Ng ; J. Suh
Thermoelectric Materials
Thermoelectric Measurements / T. P. Hogan ; S. Y. Loo ; F. Guo
High Temperature Power Factor Measurement System for Thermoelectric Materials / K.-F. Hsu ; M. G. Kanatzidis
Overview of Properties of "Metallic" Na[subscript x]Co[subscript 2]O[subscript 4] Thermoelectric Materials / T. M. Tritt ; X. Tang ; E. Abbott ; J. K. Kolis
Transport and Optical Properties of the Type II Clathrates Cs[subscript 8]Na[subscript 16]Si[subscript 136] and Si[subscript 136] / M. Beekman ; G. S. Nolas ; J. Gryko ; G. A. Lamberton, Jr. ; C. A. Kendziora
Devices and Applications
Lead Free Dielectric and Magnetic Materials for Integrated Passives / R. L. Wahlers ; M. Heinz ; A. H. Feingold
MEMs in Low Temperature Co-Fired Ceramics / A. Moll ; D. Plumlee
Miniaturized Single/Multi-level Bandpass Filters for LTCC Applications / R. K. Settaluri
Authors Index
Subject Index
Preface
Low Temperature Electronics
HALO Effects on 0.13 [mu]m Floating-Body Partially Depleted SOI n-MOSFETs in Low Temperature Operation / J.A. Martino ; M. A. Pavanello ; E. Simoen ; C. Claeys
37.

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図書
editors, A. Goyal ... [et al.] ; sponsoring divisions, Electronics, and Dielectric Science and Technology
出版情報: Pennington, N.J. : Electrochemical Society, c2005  viii, 422 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-29
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38.

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図書
editors, H. M. Ng, A. G. Baca ; sponsoring division, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2004  xii, 600 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2004-06
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39.

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図書
editors, J. L. Davidson ... [et al.] ; sponsoring divisions, Electronics, Sensor, Dielectric Science and Technology
出版情報: Pennington, N.J. : Electrochemical Society, c2004  viii, 339 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2004-09
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図書
editors, R.E. Sah ... [et al.] ; sponsoring divisions, Dielecric Scoeice and Technology, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2005  xiii, 588 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2005-01
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41.

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図書
editors, M. Cahay ... [et al.] ; sponsoring divisions, Dielectric Science and Technology, Electronics, High Temperature Materials, and New Technologies Subcommittee
出版情報: Pennington, NJ : Electrochemical Society, c2005  xi, 662 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2004-13
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42.

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図書
editors C.L. Claeys ... [et al.] ; sponsoring division: Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2002  xiii, 406 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-20
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43.

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図書
editor, Y. Kuo ; sponsoring divisions, Electronics, Dielectric Science and Technology
出版情報: Pennington, N.J. : Electrochemical Society, c2003  ix, 306 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; 2002-23
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44.

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図書
editors, E.J. Brandon ... [et al.] ; sponsoring divisions, Energy Technology, Battery, Dielectri Science and Technology, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2003  vii, 228 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; 2002-25
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45.

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図書
editor, G.S. Mathad ; assistant editors, T. S. Cale ...[et al.] ; sponsoring divisions, Dielectric Science and Technology, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2003  x, 424 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-13
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目次情報: 続きを見る
Preface
Plasma Processing for the 100 nm Node / Part I:
Plasma Processes
Kinetic Modeling for Multi-Component Thin Film Growth in Plasma-Enhanced Atomic Layer Deposition / J-H. Kim ; J-Y. Kim ; P-K. Park ; S-W. Kang
Incidence of Deposition Parameters on the Structural Properties of Y[subscript 2]O[subscript 3] Grown by Pulsed Injection PE-MOCVD / C. Durand ; C. Vallee ; O. Salicio ; V. Loup ; M. Bonavalot ; O. Joubert ; C. Dubourdieu
Copper-Barrier and Hard-Mask Elaboration by Plasma-Enhanced Chemical Vapor Deposition Using Organosilane Precursors / B. Remiat ; F. Fusalba ; P. Maury ; V. Jousseaume ; C. Lecornec ; F. Gaillard ; J. Durand
Gas-Phase and Surface Reactions in Plasma Enhanced Chemical Etching of High-k Dielectrics / L. Sha ; J.P. Chang
A Comparative Study of the Etching Behavior of Thin AlN and Al[subscript 2]O[subscript 3] Films / M. Engelhardt
Etching of Low-k Interconnect Materials for Next Generation Devices / T. Chevolleau ; N. Posseme ; L. Vallier ; I. Thomas-Boutherin
Resist Transformation during Etching Steps Involved in Patterning Low-k Dielectric Materials: Impact on Process Control / E. Pargon
Adhesion of Copper and Sulfur-Modified SiLK / D.-L. Bae ; J.J. Senkevich ; C. Kezewski ; Y. Kwon ; T.S. Cale
Porous SiOCH Modification Studies Induced by Ashing Processes / Thomas-Boutherin
Modeling Investigation of Plasma Clean Processes / D. Zhang ; D. Denning
Copper Interconnects with Low-k Inter Level Dielectric Films / Part II:
Copper Deposition
Preparation of Cu Films on Polymer Substrate by ECR-MOCVD Coupled with DC Bias at Room Temperature / J-K. Lee ; B-W. Cho
Effect of Novel Plasma Treatment on Superfilling Behavior in Chemically Enhanced CVD (CECVD) Cu Process / S-G. Pyo ; W-S, Min ; D-W. Lee ; S. Kim ; J-G. Lee
A Model of Copper Deposition for the Damascene Process / C. Gabrielli ; J. Kittel ; P. Mocoteguy ; H. Perrot ; A. Zdunek ; P. Bouard ; M. Haddix ; L. Doyen ; M.C. Clech
AFM Observation of Microstructural Evolution at Room Temperature in Electrodeposited Copper Metallization / S. Ahmed ; D.N. Buckley ; A. Arshak ; A.M. O'Connell ; L.D. Burke
"Seedless" Electrochemical Deposition of Copper on Liner-Materials for ULSI Devices / D.J. Duquette ; S.J. Kim ; M.J. Shaw
Electroless Metallization of Hydrogen-Terminated Si[left angle bracket]100[right angle bracket] Surface Functionalized by Viologen / W.H. Yu ; E.T. Kang ; K.G. Neoh
Barrier and Low-k Films
TiZrN as a Copper Barrier for 0.13 [mu]m and 0.09 [mu]mTechnology Nodes / L. Swedberg ; C. Prindle
Nanostructured Ta-Si-N Thin Films as Diffusion Barriers between Cu and SiO[subscript 2] / L.W. Lai ; C.C. Chang ; J.S. Chen ; Y.K. Lin
Selectivity Studies on Tantalum Barrier Layer for Copper Chemical Mechanical Planarization / A. Vijayakumar ; T. Du ; K.B. Sundaram ; V. Desai
Investigation of Barrier Layers for Cu-Ultra Low-k Porous Polymer Integration / L.Y. Yang ; D.H. Zhang ; C.Y. Li ; P.D. Foo ; K. Prasad ; C.M. Tan
Atomic Layer Deposition of Ruthenium Glue Layer for Copper Damascene Interconnect / O-K. Kwon
Introducing Advanced ULK Dielectric Mateials in Interconnects: Performance and Integration Challenges / C. Le Cornec ; K. Haxaire ; T. Mourier ; P.H. Haumesser ; S. Maitrejean ; J. Simon ; A. Chabli ; G. Passemard
Surface Modification of Porous Low-k Dielectrics / Q.T. Le ; C.M. Whelan ; H. Struyf ; S.H. Brongersma ; T. Conard ; W. Boullart ; S. Vanhaelemeersch ; K. Maex
Structural and Electrical Characteristics of Low Dielectric Constant Porous Hydrogen Silsesquioxane for Cu Metallization / J.H. Wang ; P.T. Liu ; T.C. Chang ; W.J. Chen ; S.L. Cheng ; J.Y. Lin ; L.J. Chen
Nanoporous Low-k Polyimide Films Prepared from Poly(Amic Acid) with Grafted Poly(Acrylic Acid)/Poly (Ethylene Glycol) Side Chains / W.C. Wang ; C.K. Ong ; L.F. Chen
X-Ray Photoelectron Spectroscopic Study of Surface Modification of SiLK under UV-Irradiation / Y. Uchida ; T. Fukuda ; H. Yanazawa
Characteristics of Low-k Methyl-Silsesquiazane (MSZ) for CMP Process Using Oxygen Plasma Treatment / T.M. Tsai ; S.T. Yan ; Y.C. Chang ; H. Aoki ; T.Y. Tseng
Copper CMP and Reliability
Electrochemical Planarization of Copper
A Multiscale Mechanical CMP Model for Patterned Wafers / J. Seok ; C.P. Sukam ; A.T. Kim ; J.A. Tichy
The Roles of Complexing Agents on Copper CMP / G. Lim ; T.E. Kim ; J.-H. Lee ; J. Kim ; H.-W. Lee
The Effect of Inhibitor and Complexing Agents on Cu CMP / Y. Luo
Role of Oxidizer and Inhibitor on Chemical Mechanical Planarization of Copper / S.C. Kuiry ; S. Seal
Effect of Abrasive Particles on Chemical Mechanical Polishing Performance / D. Tamboli ; G. Banerjee ; S. Chang ; M. Waddell ; I. Butcher ; Q. Arefeen ; S. Hymes
Chemical Mechanical Planarization of Ruthenium for Capacitor Bottom Electrode in DRAM Technology / S-H. Lee ; Y-J. Kang ; J-G. Park ; S-I. Lee
Industry Challenges in Post-Etch Cleaning Chemistries for Advanced Copper/Low-k Applications / M.A. Fury
Cleaning of Copper Surface Using Vapor-Phase Organic Acids / T. Yagishita ; K. Ishikawa ; M. Nakamura
Time-Zero Failure Current Measurement for Early Monitoring of Defective Cu Lines at Wafer Level / J-H. Park ; B-T. Ahn
Annealing Characteristics of Copper Films for Power Device Applications / L. Castoldi ; S. Morin ; G. Visalli ; T. Fukada ; M. Ouaknine ; E.H. Roh ; W.S. Yoo
The Stability of Carbon-Doped Silicon Oxide Low Dielectric Constant Thin Films / Y.H. Wang ; R. Kumar
Nickel Silicide Formation Using a Stacked Hotplate-Based Low Temperature Annealing System / T. Murakami ; B. Froment ; V. Carron ; W-S. Yoo
3-D Interconnects
3-D Electromigration Modeling and Simulation in Aluminum-Silicon Dioxide and Copper-Low-k Multilevel Interconnects / V. Sukharev ; R. Choudhary ; C.W. Park
Transient Thermal and Mechanical Modeling of 3D-IC Structures / J. Zhang ; J.-Q. Lu ; R.J. Gutmann
3D System-on-a-Chip Using Dielectric Glue Bonding and Cu Damascene Inter-Wafer Interconnects / A. Jindal ; J.J. McMahon ; K.-W. Lee ; R.P. Craft ; B. Altemus ; D. Cheng ; E. Eisenbraum
The Impact of Wafer-Level Layer Transfer on High Performance Devices and Circuits for 3D IC Fabrication / K.W. Guarini ; A.W. Topol ; M. Ieong ; K. Bernstein ; K. Xiu ; R.V. Joshi ; R. Yu ; L. Shi ; M.R. Newport ; D.V. Singh ; G.M. Cohen ; H.B. Pogge ; S. Purushothaman ; W.E. Haensch
Wafer Bonding and Thinning Integrity for 3D-IC Fabrication
Author Index
Subject Index
Preface
Plasma Processing for the 100 nm Node / Part I:
Plasma Processes
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図書
editors, J. A. Martino ; sponsoring division: Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2003  x, 462 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-09
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目次情報: 続きを見る
Foreword
SOI
Multiple-Gate Silicon-On-Insulator MOS Transistor / J.-P. Colinge
Degradation of Deep Submicron Partially Depleted SOI CMOS Transistors Under MEV Proton or Gamma Irradiation / E. Simoen ; J.M. Rafi ; A. Mercha ; K. De Meyer ; C. Claeys ; M. Kokkoris ; E. Kossionides ; G. Fanourakis ; A. Mohhamdzadeh
The Leakage Drain Current Behavior in Graded-Channel SOI nMOSFETs Operating up to 300[degree] C / M. Bellodi ; J. A. Martino
Analysis of the Capacitance vs. Voltage in Graded Channel SOI Capacitor / V. Sonnenberg
Analysis on GC SOI MOSFET Analog Parameters at High Temperatures / M. Galeti ; M. A. Pavanello
Study of Series Resistance and Effective Channel Length Behavior Comparing Graded-Channel and Conventional SOI nMOSFETs / G. F. de Almeida ; A. S. Nicolett
An Improved Current Model for Edgeless SOI MOSFETS / R. Giacomini
Comparison Between Conventional and Graded-Channel SOI nMOSFETs in Low Temperature Operation / P. G. Der Agopian
Comparison Between the Leakage Drain Current Behavior in SOI pMOSFETs and SOI nMOSFETs Operating at 300[degree]C / Marcello Bellodi ; Joao Antonio Martino
Low Temperature
Low Temperature Electronics: From Fundamental Physics to Emerging Silicon Technologies / Cor Claeys ; Eddy Simoen
A Study on the Self-Heating Effect in Deep-Submicrometer Partially Depleted SOI MOSFETs at Low Temperatures
Performance Analysis of Single-Electron Winner-Take-All Network Circuits / J. Guimaraes ; J. C. da Costa
Device Characterization
The Integral Function Method: A New Method to Determine the Non-Linear Harmonic Distortion / A. Cerdeira ; M. A. Aleman ; M. Estrada ; D. Flandre ; B. Parvais ; G. Picun
Determination of the Silicon Film Thickness and Back Oxide Charge Density on Graded-Channel SOI nMOSFETs
ESD Defect Localization and Analysis Using Pulsed OBIC Techniques / T. Beauchene ; D. Lewis ; D. Tremouilles ; F. Essely ; P. Perdu ; P. Fouillat
A Comparative Study of Aluminum and Tungsten Silicon Schottky Diodes / P. R. de Souza ; J. W. Swart ; J. A. Diniz
Low Operating Voltage of an ITO/MEH-PPV/Al Light Emmiting Device / J. A. R. das Neves ; E. A. T. Dirani ; E. R. dos Santos ; F. J. Fonseca ; A. M. de Andrade
High Quality Emitter Silicon Solar Cells / N. Stem ; M. Cid
Device Physics and Simulation
"Atomistic" Simulation of AlGaAs/InGaAs/GaAs pHEMTs / A. P. A. Baleeiro ; P. C. M. Machado
Numerical Analysis of the Quantum STUB Transistor / A. B. Guerra ; E. J. P. Santos
State Diagram Simulations of SET Circuits Using SPICE / R. Van de Haar ; J. Hoekstra
On the Modelling of the Dark Current Characteristics of Heterodimensional Schottky Photodiodes / R. Ragi ; M. A. Romero ; B. Nabet
A Layout Compactor Using a Virtual Grid Representation and Independent Hardware Platform / L. G. Moura ; M. L. Anido ; C. E. T. Oliveira
Comb-Shape Microresonators Modeling for Microelectromechanical Filter Synthesis / J. M. Vassoler ; J. S. O. Fonseca ; I. Iturrioz ; Renato P. Ribas
Study of the Influence of the Secondary Electron Emission Coefficient in Radio-Frequency Argon Plasmas Using Particle In Cell Simulation / E. R. Cizzoto ; M. Roberto ; P. Verdonck ; H. S. Maciel
Process Technology
The Effect of Nitrogen Concentration at Silicon Oxynitride Gate Insulators Formed by 28N2+ Implantation into Silicon with Additional Conventional or Rapid Thermal Oxidation / A. G. Felicio ; J. Godoy Fo. ; I. Doi ; M. A. A. Pudenzi
Formation of Nickel Silicides onto (100) Silicon Wafer Surfaces Using a Thin Platinum Interlayer / R. W. Reis ; S. G. dos Santos Filho
In-Situ and Ion Implantation Nitrogen Doping On Near Stoichiometric a-SiC:H Films / A.R. Oliveira ; M.N.P. Carreno
Silicon Carbide Clusters in Silicon Formed by Carbon Ions Implantation / N. A. E. Forhan ; I. Pereyra
Characterization of Electrospinning Process Using Blends of Polyacrylonitrile and Carbon Particles / A. N. R. da Silva ; R. Furlan ; I. Ramos ; M. L. P. da Silva ; E. Fachini ; J. J. Santiago-Aviles
Selective Silicon Nitride Etching by ECR Plasmas Using SF6 and NF3 Based Gas Mixtures / C. Reyes-Betanzo ; S. A. Moshkalyov ; A. C. S. Ramos
Study of Power Balance in Electronegative Capacitively Coupled Plasmas / L. Swart
Synthesis of Carbon Nanotubes by Plasma-Enhanced Chemical Vapor Deposition
Six Sigma Method Applied for Reflow Soldering Process in SMT (Surface Mount Technology) / A. C. Bueno ; M. P. Shiki ; V. R. de Lima ; L. G. L. Brandao ; M. M. Oka
Self-Sustained Bridges of a-SiC:H Obtained by PECVD Technique / M. N. P. Carreno ; A. T. Lopes
Plasma Polymerized Ethyl Ether for Obtaining Thin Films for Sensor Development / R. R. Lima ; R. A. M. Carvalho ; N. R. Demarquette
Photoconductivity of Semi-Insulating Polysilicon / D. G. Lantin ; E. Onoda ; L. S. Zambom ; R. D. Mansano
Effects of C[subscript 2]H[subscript 2] Gas Content on the Characteristics of DLC Films Deposited by Magnetron Sputtering / J. Libardi ; M. Massi ; C. Otani ; S. P. Ravagnani ; M. Guerino ; J. M. J. Ocampo
Fabrication of Submicron Structures in Polycristalline Silicon by Reactive Ion Etching Using Fluorine- and Chlorine- Containing Plasmas / A. C. Seabra
Bonded Substrates for Optoelectronic Applications / M. Reiche ; L. Long ; D. Stolze ; E. Hiller ; H. Uebensee
Advances in the Process and in the Methodology of Emulsion Optical Mask Construction / D. S. de Lara ; L. O. S. Ferreira
Influence of RF Frequency on Production of Adsorbent Organic Films by PECVD / A.P. Nascimento Filho ; C. Hamanaka ; D. P. Jesus
Orientation-Dependent Anisotropic Etching Simulation in Silicon Wafer / R. R. Neli ; R. P. Ribas
Sensors and Actuators
Integrated Termopiles for Infrared Sensing / W. R. Mendes ; H. E. M. Peres ; F. J. Ramirez-Fernandez
Porous Silicon Processing for Enhancing Thin Silicon Membranes Fabrication / M. O. S. Dantas ; E. Galeazzo
Gold Microwires Applied to Cardiac Potential Detection / M. B. A. Fontes ; I. A. Cestari
Simulations of Silicon Microstructure for Preconcentration of Metallic Ions / J. A. F. da Silva ; E. W. Simoes ; M. T. Pereira
Three-Color Detector for APS-CMOS Image Sensors Employing a Triple Junction / S. N. M. Mestanza ; L.T. Manera ; A. C. T de Sousa ; I. F. Silva
Modeling and Simulation of Static Characteristics of a pMOS Compatible Hot Wire Principle-Based Flow Micro-sensor / A. C. O. Junior
Electrochemical Process for Silicon Tips Fabrication
Fine Angular Positioning with Ultrasonic Motor / C. R. Rodrigues ; R. S. Pippi ; A. L. Aita ; J. B. S. Martins
Subject Index
Author Index
Foreword
SOI
Multiple-Gate Silicon-On-Insulator MOS Transistor / J.-P. Colinge
47.

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図書
editors, Nilton I. Morimoto, Renato P. Ribas, Patrick Verdonck
出版情報: Pennington, N.J. : Electrochemical Society, c2002  x, 488 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-8
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48.

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図書
editors, M. Cahay ... [et al.] ; sponsoring divisions, Dielectric Science and Technology, Electronics, and Luminescene an Display Materials
出版情報: Pennington, NJ : Electrochemical Society, Inc., c2002  viii, 218 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-9
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49.

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図書
editors, P.J. Timans ... [et al.] ; sponsoring deivisions, Electronics, Dielectric Science and Technology, and High Temperature Materials
出版情報: Pennington, NJ : Electrochemical Society, c2002  xiii, 478 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-11
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図書
editor, L. Mendicino ; sponsoring divisions, Dielectric Science and Technology and Electroncis
出版情報: Pennington, N.J. : Electrochemical Society, c2002  viii, 262 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-15
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目次情報: 続きを見る
Process Emissions Characterization and Treatment / A.:
Emissions Characterization of Advanced CVD Processes and Abatement Performance / V. Vartanian ; B. Goolsby ; C. Reddy ; V. Arunachalam ; L. Mendicino
Effective Management of Process Exhaust from Low-K CVD Processes / S. Carss ; A. Seeley ; J. Van Gompel
Development and Evaluation of the ATMI CDO 865 for Abatement of Low-K Process Effluent / B. Flippo ; R. Vermeulen
Managing Fluorine Emissions at Semiconductor Fabrication Facilities / M. Smylie
Characterization of Plasma-Etched RuO[subscript 2] Substrates / S. Samavedam ; L Mendicino ; J.J. Lee ; T. Guenther ; S. Dakshina-Murthy ; C. Sparks
Evaluation of Ozone Emissions Destruction Units for SACVD Process Tools / C. Nauert ; R. Camacho ; B. Day ; R. Lathrop ; H. Kwong ; J. Fox
Potential Cost of Ownership Reduction for a Nitride Furnace Point of Use Abatement Device / B. Davis ; M. Rossow
Electrochemical Removal of Hydrogen Sulfide from Geothermal Brines / B.G. Ateya ; F.M. AlKharafi
PFC Emissions Reduction / B.:
The Evaluation of Hexafluoro-1,3-Butadiene as an Environmentally Benign Dielectric Etch Chemistry in a Medium Density Etch Chamber / R. Chatterjee ; R. Reif ; T. Sparks
Post-Pump PFC Abatement by Atmospheric Microwave Plasmas: Completion of Metal Etch Beta Test / J.C. Rostaing ; D. Guerin ; C. Larquet ; A. El-Krid ; C.H. Ly ; J. Bruat ; E. Coffre ; M. Moisan ; H. Dulphy ; P. Moine ; J. Wiechers
Characterization of NF[subscript 3] Chamber Cleans on Multiple CVD Platforms / J. Rivers ; J. Vires ; A. Soyemi ; S.P. Sun ; M. Turner ; C. Esber
Reduction of PFC Emissions Through Process Advances in CVD Chamber Cleaning / S. Hsu ; C. Allgood ; M. Mocella
PFC Emissions Reduction and Process Improvements with Remote Plasma CVD Chamber Cleans / P.T. Brown ; S. Filipiak ; H. Estep ; M. Fletcher
Thermal Reductive Destruction of Perfluorocarbons into Safe Products Through In-situ Generation of Alkali Metals in Heated Solid Mixtures / M.C. Lee ; W. Choi
Alternative Cleans Technologies and Emerging Issues / C.:
Post Oxide Etching Cleaning Process Using Integrated Ashing and HF Vapor Process / O. Kwon ; H. Sawin
Fluorocarbon Film and Residue Removal Using Supercritical CO[subscript 2] Mixtures / S. Myneni ; D. Hess
A Summary of Recent Motorola Water Conservation Efforts from Source Reduction of Process Equipment / B. Raley ; T. Dietrich
Partnerships to Address EHS Aspects of Chemical Management in the Semiconductor Industry: Lessons from the PFAS Experience / M. Bowden ; L. Beu ; S. Pawsat
PFAS: Treatment Options and Sampling Methods / K. Barbee ; L. Lovejoy
EHS Risk Assessment and Management / D.:
Concepts and Application of Risk Management of Address Business Needs / S. Trammell ; J. Heironimus
Emergency Preparedness and Response for Semiconductor Manufacturing / S. Harris
Environmental Health and Safety (EHS) Investigation of CVD Exhaust System: Identification and Mitigation of Potential Release of Process Gases and By-products / L. Chandna ; A. Reynoso ; K. Hendricksen
Point of Use Abatement Unit By-Pass for NF[subscript 3]-Based CVD Chamber Clean Applications / D. Babbitt
Process Emissions Characterization and Treatment / A.:
Emissions Characterization of Advanced CVD Processes and Abatement Performance / V. Vartanian ; B. Goolsby ; C. Reddy ; V. Arunachalam ; L. Mendicino
Effective Management of Process Exhaust from Low-K CVD Processes / S. Carss ; A. Seeley ; J. Van Gompel
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図書
editor, G.S. Mathad ; assistant editors, M.D. Allendorf, R.E. Sah, M. Yang ; sponsoring divisions, Dielectric Science and Technology and Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2002  ix, 324 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-17
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Preface
Plasma Enhanced Deposition
Process and Material Properties of PECVD Boron-doped Amorphous Silicon Films / H. Nominanda ; Y. Kuo
Properties of Boron-doped Amorphous Silicon Films Obtained with a Low Frequency Plasma / A. Heredia-J ; A. Torres-J ; A. Jaramillo-N ; F.J. De la Hidalga-W ; C. Zuniga-I ; A. Munguia-C
Si Epitaxial Growth on Atomic-Order Nitrided Si (100) using an ECR Plasma / M. Mori ; T. Seino ; D. Muto ; M. Sakuraba ; J. Murota
Optimizing Pulse Protocols in Plasma-Enhanced Atomic Layer Deposition / V. Prasad ; M.K. Gobbert ; T.S. Cale
High Density Plasma Deposited Silicon Nitride Films for Coating InGaAlAs High-Power Lasers / R.E. Sah ; F. Rinner ; R. Keifer ; M. Mikulla ; G. Weimann
High Productivity 300 mm HDP-CVD for Next-Generation Gap Fill Processes / B. Geoffrion ; N. Dubey ; P. Krishnaraj
Modeling & Mechanisms
Plasma Hydrogenation of a Buried Trap Layer in Silicon: Formation of a Platelet Layer / A.Y. Usenko ; W.N. Carr ; B. Chen
Integrated Modeling Investigation of Plasma Dielectric Etching Processes / D. Zhang ; S. Rauf ; T.G. Sparks ; P.L.G. Ventzek
Plasma-Surface Kinetics and Feature Profile Evolution in Cl[subscript 2] + HBr Etching of Poly-silicon / W. Jin ; S.A. Vitale ; H.H. Sawin
Surface Treatment of SiC using NF[subscript 3]/O[subscript 2] Plasmas / T. Kai ; W. Shimizu ; A. Hibi ; T. Iwase ; T. Abe ; M. Inaba ; Z. Ogumi ; T. Tojo ; A. Taska
Quantitative Analysis and Comparison of Endpoint Detection Based on Multiple Wavelength Analysis - Part I: Multi-Wavelength Method / B.E. Goodlin ; D.S. Boning
Quantitative Analysis and Comparison of Endpoint Detection Based on Multiple Wavelength Analysis - Part II: Noise Analysis of Multi-Wavelength OES
Equipment / Plasma Etching II:
Investigations of 300 mm Wafer Tool Set Progress and Performance / K. Mautz
Simultaneous Fault Detection and Classification for Semiconductor Manufacturing Tools / B.M. Wise
Effects of Showerhead Face Chemistry on Capacitively Coupled Plasma Discharges / B. Devulapalli ; G.I. Font
Gate Dielectrics and Silicon / Plasma Etching III:
Differential Surface Charging of the Dielectric during Plasma Etching and Surface Charge Leakage Kinetic / M.K. Abatchev ; B.J. Howard ; D.S. Becker ; R.L. Stocks ; J. Chapman
Thickness Scaling of Gate Dielectric on Plasma Charging Damage in MOS Devices / K-S. Chang-Liao ; P-J. Tzeng
Gate Oxide Integrity and Micro-loading Characterization of 300 mm Process Tools
Measurement of Device Charging Damage in a Dielectric Etch 300 mm Chamber with a Bias Voltage Diagnostic Cathode / M.C. Kutney ; S. Ma ; K. Horioka ; R. Lindley ; S. Kats ; T. Kropewnicki ; K. Doan ; H. Shan
Etching of High-k Gate Dielectrics and Gate Metal Candidates / S.K. Han ; I. Kim ; H. Zhong ; G.P. Heuss ; J.H. Lee ; D. Wicaksana ; J.P. Maria ; V. Misra ; C.M. Osburn
Etching High Aspect Ratio Silicon Trenches / S. Panda ; R. Ranade ; G.S. Mathad
Inverse Micro-loading Effect in Reactive Ion Etching of Silicon / S. Jensen ; O. Hansen
Plasma Etched Micro-machined Silicon Stampers for Plastic Bio-Technology Applications / D. Weston ; W.J. Dauksher ; D. Rhine ; T. Smekal ; P.J. Stout
Silicon Dioxide / Plasma Etching IV:
Radical Control in a Hole to Break an Etch-Stop Barrier in Highly Selective HAC Etching / N. Negishi ; K. Yokogawa ; T. Yoshida ; M. Izawa
Etching vs Deposition: The Effect on Profiles and Etching Yield Curves for Oxide Etching / O. Kwon
Dual Damascene, Low-k / Plasma Etching V:
Effect of Oxygen and Nitrogen Additions on Silicon Nitride Reactive Ion Etching in Fluorine Containing Plasmas / C. Reyes-Betanzo ; S.A. Moshkalyov ; A.C.S. Ramos ; M.A. Cotta ; J.W. Swart
A Novel Approach to Reduce Via Corner Faceting in the Via-First, No Middle Stop Layer Dual Damascene Trench Etch / Y-S. Kim ; K.L. Doan ; C. Bjorkman ; A. Paterson ; Z. Sui
Patterning 180 nm Copper Oxide Dual Damascene Baseline with 193 nm Resists / V. Bakshi ; G. Smith
Copper Fine Patterns Etched with HBr Plasma Based Processes / S. Lee
Intellectual Property Creation from Semiconductor Process and Equipment Development
Author Index
Subject Index
Preface
Plasma Enhanced Deposition
Process and Material Properties of PECVD Boron-doped Amorphous Silicon Films / H. Nominanda ; Y. Kuo
52.

図書

図書
editors, M. Cahay ... [et. al] ; sponsoring divisions, Dielectric Science and Technology, Electronics, and Luminescence and Display Materials
出版情報: Pennington, N.J. : Electrochemical Society, c2002  viii, 416 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-18
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Preface
Carbon Nanotubes
Quantum Interference Effects in the Nanotriode / S. Johnson ; A. Blackburn ; A. Driskill-Smith ; D. Hasko ; H. Ahmed
Microgated In-Situ Grown Carbon Nanotube Field Emitter Arrays / D. Hsu ; J. Shaw
A Micromachined On-chip Vacuum Microtriode Using a Carbon Nanotube Cold Cathode / W. Zhu ; L.H. Chen ; C. Bower ; D. Shalom ; D. Lopez
Electron Emission Microscopy Measurements of Nitrogen and Sulfer Doped Carbon Films / F. Koeck ; S. Gupta ; B.R. Weiner ; G. Morell ; J.M. Garguilo ; B. Brown ; R.J. Nemanich
Carbon Nanotubes for Future Field Electron Emission Devices / O. Groning ; R. Clergeraux ; L. Nilsson ; P. Ruffieux ; L. Schlapbach ; P. Groning
Saturated Emmision from Carbon Nanotubes
Fabrication and Characterization of Field Emission Devices Based on Single Vertically Aligned Carbon Nanofibers / M.A. Guillorn ; V.I. Merkulov ; A.V. Melechko ; E.D. Ellis ; L.R. Baylor ; D.K. Hensley ; R.J. Kasica ; T.R. Subich ; D. Lowndes ; M.L. Simpson
Atom-by-atom Analysis of Field Emission Sources by the Scanning Atom Probe / O. Nishikawa ; T. Yagyu ; T. Murakami ; M. Watanabe ; M. Taniguchi ; T. Kuzumaki ; S. Kondo
Field Emitter Arrays
Microfabricated Field Emitter Performance Enhancement by High Current Processing / P.R. Schwoebel ; C.A. Spindt ; C.E. Holland
Study of Emitter Materials for use in Hostile Environments / W.A. Mackie ; C. Dandeneau ; L.A. Southall ; F.M. Charbonnier
Intelligent Silicon Field Emission Arrays / C.Y. Hong ; A.I. Akinwande
Field Emission Array Cathode Material Selection for Compatibility with Electric Propulsion Applications / C.M. Marrese-Reading ; J. Polk ; B. Koel ; M. Quinlan
Field Induced Thickening of Au-coated Nanosize Si-tip and Field Emission from PR-coated Si-tip / S.S. Choi ; M.Y. Jung ; D.W. Kim ; M.S. Joo
Field Emission Study of Ti-Silicide Array / S.B. Kim ; H.T. Jeon
Theory and Simulation
Emissive and Cooling Properties of Carbon Based Materials for Microelectronics / N.M Miskovsky ; P.H. Cutler ; A. Mayer ; P.B. Lerner
Modeling Device Performance and Feature Variation in Microtip Field Emitters / J. Zuber ; K.L. Jensen
Simulations of Transport and Field-Emission Properties of Multi-wall Carbon Nanotubes / N.M. Miskovsky
Equilibrium Theory of Nanotips / G. Bilbro
An Analysis of FEA Noise Mechanisms / M. Cahay
Sub-Poissonian and Super-Poissonian Shot Noise in Planar Cold Cathodes / R. Krishnan
Electrostatic Factors Affecting Emission From Discrete Isolated Diamond Nanodots / D.L. Jaeger ; T. Tyler ; A.K. Kvit ; J.J. Hren ; V.V. Zhirnov
Current Density Evaluation At The Barrier Maximum / P. O'Shea ; D. Feldman
Tunnel Charcateristics of the Metal Tip-Cathodes with the Superthin Diamond Coatings Using Non-Local Considerations / L. Il'chenko ; V. Il'chenko ; R.M. Novosad ; Y.V. Kryuchenko
About Theoretical Calculation of Semiconductor's Surface Images for Closely Spaced Semiconductor and Metal in STM
Thin films and Nanostructures
Emission from GaN p-n Junction Cold Cathodes / R. Treece ; D. Patel ; C. Menoni ; J. Smith ; J. Pankove
Effect of Film Thickness on Low-Energy Electron Transmission in Thin CVD Diamond Films / J. Yater ; A. Shih ; J. Butler ; P. Pehrsson
Growth and Characterization of LaS and NdS Thin Films on Si, GaAs, and InP Substrates / Y. Modukuru ; J. Thachery ; P. Boolchand ; J. Grant
Surface-Emitting Ballistic Cold Cathodes Based on Nanocrystalline Silicon Diodes / N. Koshida ; K. Kojima ; Y. Nakajima ; T. Ichihara ; Y. Watabe ; T. Komoda
Microwave-Tube Experiments Utilizing Ferroelectric Electron-Gun / M. Einat ; E. Jerby ; G. Rosenman
Author Index
Subject Index
Preface
Carbon Nanotubes
Quantum Interference Effects in the Nanotriode / S. Johnson ; A. Blackburn ; A. Driskill-Smith ; D. Hasko ; H. Ahmed
53.

図書

図書
editors, G.M. Swain ... [et al.] ; sponsoring divisions, Dielectric Science and Technology, High Temperature Materials, and Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2002  ix, 290 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-25
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54.

図書

図書
editors, H.R. Huff, L. Fabry, S. Kishino ; sponsoring division, Electronics
出版情報: Pennington, NJ : The Electrochemical Society, c2002  2 v. (xx, 1074 p.) ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-2
所蔵情報: loading…
55.

図書

図書
editor, G.S. Mathad ; assistant editors, B.C. Baker ... [et al.] ; sponsoring divisions, Dielectric Science and Technology, Electronics, Electrodeposition
出版情報: Pennington, N.J. : Electrochemical Society, c2003  ix, 346 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-22
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56.

図書

図書
editors, D. misra, K. Wörhoff, P. Mascher ; sponsoring divisions, Dielectric Science and Technology, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2003  ix, 436 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-1
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Preface
Biosystems and Microsystems / I.:
Ion Track Nanostructuring of Dielectrics / K. Hjort ; E. Balanzat ; C. Trautmann ; M. Toulemonde ; A. Weidinger
Design, Integration and Performance Evaluation of Optical Detection Elements for Miniaturized Biochemical Devices / K.B. Mogensen ; A.M. Jorgensen ; N.J. Petersen ; O. Geschke ; J.P. Kutter
Silicon-Based Field-Effect Structures - From Dielectrics to Bioelectronics / M.J. Schoening
Neurotransistors for Biomedical Nanotechnology / A.J. Menezes ; V.J. Kapoor
Biosensors Based On Standard Dielectric Materials / J. Bausells ; A. Errachid ; N. Zine
Barrier Films on Paper and Cellulose using Fluorocarbon Plasmas / S. Vaswani ; J. Koskinen ; S. Zauscher ; D. Hess
Controlled Filling of Silicon Trenches with Doped Oxide for MEMS / A. Agarwal ; R. N.
Integrated Optics and Optical Applications / II.:
Optical and Electronic Properties of Nanostructured Silicon / D.J. Lockwood
MOCVD-Deposited Dielectric Films for Integrated Optical and Microelectronic Circuits / J. Mueller
Optical Characaterization of LPCVD SiOxNy Thin Films / M. Modreanu ; M. Gartner ; N. Tomozeiu
Material Consideration for Integrated Optics in Silica-on-Silicon Technology / L. Wosinski ; M. Dainese ; H. Fernando
Nanoscale characterization and local electromechanical properties of ferroelectric films for MEMS / A. Kholkin ; V. Shvartsman ; A. Emelyanov ; A. Safari
Optical MEMS devices based on wet anisotropic etching of silicon / M. Hoffmann ; D. Nusse ; E. Voges
Progress in the fabrication of complex optical coatings / D. Poitras
Silicon Nitride Coatings for Si Solar Cells: Control of Optical Reflection and Surface/Bulk Passivation / B. Sopori
Materials Processing / III.:
Temporal Pulse Shaping and Optimization in Ultrafast Laser Ablation of Materials / R. Stoian ; S. Winkler ; M. Hildebrand ; M. Boyle ; A. Thoss ; A. Rosenfeld ; I.V. Hertel
Development and Characterization of KOH Resistant PECVD Silicon Nitride for Microsystems Applications / F.E. Rasmussen ; B. Geilman ; M. Heschel ; O. Hansen
Ferroelectric properties of Pb-excess PZT thin films prepared by Zirconium oxyacetate-based sol-gel process / K. Nakano ; G. Sakai ; K. Shimanoe ; N. Yamazoe
Progress in Electronics / IV.:
Structural and Electronic Properties of Nanocrystalline Silicon / Silicon Dioxide Superlattices ; L. Tsybeskov ; B. V. Kamenev ; D. J. Lockwood
Properties of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy / T.W. Kang ; H.-M. Kim
New Trends in Silicon Thin Films and Applications / J.-P. Kleider ; P. Roca i Cabarrocas ; C. Guedj
Novel Dielectric Thin Films for Frequency Agile Microwave Devices / M.W. Cole ; W. Nothwang ; C. Hubbard ; E. Ngo ; M. Ervin ; R.G. Geyer
Material Aspects in Emerging Nonvolatile Memories / T. Mikolajick ; C.U. Pinnow
Investigation of ru Thin Films Prepared by Chemical Vapor Deposition as Bottom Electrodes for Memory Applications / S.Y. Kang ; H.J. Lim ; C.S. Hwang ; H.J. Kim
Low-K and High-K Dielectrics / V.:
Characterization of Low-k to Extreme Low-k SiCOH Dielectrics / A. Grill ; D.A. Neumayer
High-Throughput Screening of Binary and Ternary Dielectric Oxides by Combinatorial Technology / H. Koinuma ; R. Takahashi ; H. Minami ; Y. Matsumoto ; K. Hasegawa ; Y. Yamamoto ; K. Itaka ; T. Chikyow
Progress in Novel Oxides for Gate Dielectrics And Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors / C.R. Abernathy ; B.P. Gila ; A.H. Onstine ; S.J. Pearton ; J. Kim ; B. Luo ; R. Mehandru ; F. Ren ; J.K. Gillespie ; R.C. Fitch ; J. Sewell ; R. Dettmer ; G.D. Via ; A. Crespo ; T.J. Jenkins ; Y. Irokawa
Gas-Phase and Surface Reactions in Plasma Enhanced Chemical Etching of High-K Diectrics / L. Sha ; J. Chang
Investigation of Slow/Fast Interface States of Al2O3 / Si MOS System Using Deep Level Transient Spectroscopy / I.S. Jeon ; D. Eom ; M. Cho ; H.B. Park ; J. Park ; H. J. Kim
Characterization of a Potential Gate Dielectric: MOCVD-Grown Erbium Oxide on Silicon / M.P. Singh ; C.S. Thakur ; K. Shalini ; N. Bhat ; S.A. Shivashankar
HfO[subscript 2] Thin Films Deposited On SOI by Ion Beam Enhanced Deposition / K. Tao ; Y. Yu
Influence of the 5 A TaNx Interface Layer on Doped Metal Oxide High-k Dielectric Characterization / Y. Kuo ; J. Lu
Poster Session / VI.:
Potential Fluctuations in High-k Based Dielectric MOS Devices / J.-L. Autran ; D. Munteanu ; M. Houssa
Characterization of Thermally Evaporated ZrO2 / M. Bhaskaran ; P. K. Swain ; D. Misra
Synthesis and Characterization of Zinc Titanate Doped with Magnesium / Y.S. Chang ; Y.H. Chang ; I.G. Chen ; G.J. Chen
Investigation of High Dielectric Film on the Plastic Substrate by Novel Liquid-Phase Heterojunction Deposition / C.J. Huang ; W.R. Chen ; P.H. Chiu ; C.Z. Chen ; M.S. Lin ; S.L. Lee ; Z.Y. Lin
Thickness And Temperature Dependence Of The Ac Electrical Conductivity Of Porous Silicon Thin Films / M, Theodoropoulou ; P. Karahaliou ; S.N. Georga ; C.A. Krontiras ; N. Xanthopoulos ; M.N. Pisanias ; C. Tsamis ; A.G. Nassiopoulou
Author Index
Subject Index
Preface
Biosystems and Microsystems / I.:
Ion Track Nanostructuring of Dielectrics / K. Hjort ; E. Balanzat ; C. Trautmann ; M. Toulemonde ; A. Weidinger
57.

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図書
editors, R.E. Sah ... [et al.] ; sponsoring divisions, Dielecric Scoeice and Technology, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2003  xii, 636 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-2
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Preface
Interface Characterization / I.:
Electrical Characterization Techniques for Semiconductor-Silicon Dioxide Interface - A Review / M.J. Deen
Si-SiO[subscript 2] Interface Trap Properties and Dependence with Oxide Thickness and with Electrical Stress in MOSFET's with Oxides in the 1-2 nm Range / D. Bauza ; F. Rahmoune
EPR Studies of SiC/SiO[subscript 2] Interfaces in n-type 4H-and 6H- Oxidized Porous SIC / H.J. von Bardeleben ; J.L. Cantin ; M. Mynbaeva ; S.E. Saddow ; Y. Shishkin ; R.P. Devaty ; W.J. Choyke
Related Oxides / II.:
Novel Germanium Technology and Devices for High Performance MOSFETs and Integrated On-Chip Optical Clocking / K.C. Saraswat ; C.O. Chui ; P.C. McIntyre ; B.B. Triplett
Properties of Ultrathin High-k Dielectrics on Si Probed by Electron Spin Resonance-Active Defects: Interfaces and Interlayers / A. Stesmans ; V.V. Afanas'ev
Role of Ultra Thin Silicon Oxide Interfacial Layer in High Performance High Dielectric Constant Gate Dielectrics / R. Singh ; M. Fakhruddin ; K.F. Poole ; S.V. Kondapi ; A. Gupta ; J. Narayan ; S. Kar
Quantum Mechanical Modeling of Capacitance-Voltage and Current-Voltage Behavior for SiO[subscript 2] and High-k Dielectrics / L.F. Register ; Y.-Y. Fan ; S.P. Mudanai ; S.K. Banerjee
Thermally Driven Atomic Transport in Silicon Oxynitride and High-k Films on Silicon / I.J.R. Baumvol ; F.C. Stedile ; J. Morais ; C. Krug ; C. Radtke ; E.B.O da Rosa ; K.P. Bastos ; R.P. Pezzi ; L. Miotti ; G.V. Soares
Investigations of the Structure and Stability of Alternative Gate Dielectrics / S. Stemmer ; Z.Q. Chen ; P.S. Lysaght ; J.A. Gisby ; J.R. Taylor
Comparison of Contamination Effects in Silicon Oxide with that in Hafnium Oxide and Zirconium Oxide Gate Dielectrics / F. Shadman ; P. Raghu ; N. Rana ; C. Yim ; E. Shero
Characteristics of Metal Gate MOS Capacitor with Hafnium Oxynitride Thin Film / K.-J. Choi ; S.-G. Yoon
Charge Trapping in High-Dose Ge-Implanted and Si-Implanted Silicon-Dioxide Thin Films / A.N. Nazarov ; I.N. Osiyuk ; I.P. Tyagulskii ; V.S. Lysenko ; T. Gebel ; W. Skorupa
Film Application / Device Characterization / Reliability / III.:
What Can Low-frequency Noise Learn us About the Quality of Thin-gate Dielectrics? / E. Simoen ; A. Mercha ; C. Claeys
Analysis of Short-channel MOSFET Behavior after Gate Oxide Breakdown and its Impact on Digital Circuit Reliability / G. Groeseneken ; B. Kaczer ; R. Degraeve
Cyanide Treatment to Improve Electrical Characteristics of Si-based MOS Diodes with an Ultrathin Oxide Layer / H. Kobayashi ; T. Kobayashi ; A. Asano ; O. Maida ; M. Takahashi
Process Dependence of Negative Bias Temperature Instability in PMOSFETS / S. Prasad ; E. Li ; L. Duong
Silicon Dioxide Insulating Films for Silicon-Germanium Technology / A. Vijh ; V.J. Kapoor ; R.L. Patterson ; J.E. Dickman
New Reliability Issues of CMOS Transistors with 1.3nm Thick Gate Oxide / M.F. Li ; B.J. Cho ; G. Chen ; W.Y. Loh ; D.L. Kwong
Improved Performance With Low Temperature Silicon Nitride Spacer Process / C.M. Reddy ; S.G.H. Anderson
Interface Studies / Defects / IV.:
Growth of SiO[subscript 2] at the Sc[subscript 2]O[subscript 3]/Si(100) Interface During Annealing / G.A. Botton ; E. Romain ; D. Landheer ; X. Wu ; M.-Y. Wu ; M. Lee ; Z.-H. Lu
A Review of Defect Generation in the SiO[subscript 2] and at Its Interface with Si / J.F. Zhang
Dipoles in SiO[subscript 2]: Border Traps or Not? / D.M. Fleetwood ; S.N. Rashkeev ; Z.Y. Lu ; C.J. Nicklaw ; J.A. Felix ; R.D. Schrimpf ; S.T. Pantelides
Stabilities and Electronic States of Incorporated Nitrogen Atoms at the Interface of SiO[subscript 2]/Si(001) / T. Yamasaki ; C. Kaneta
Electrical Properties and the Reliability of Silicon Nitride Gate Dielectrics Formed by Various Processes and Annealing Treatments / K.-S. Chang-Liao ; J.Y Pan ; C.L. Cheng ; T.K. Wang
Electronically Active Defects in Utra-thin Oxynitride Gate Dielectrics / D.A. Buchanan
Nitrogen Content and Interface Trap Reduction in SiO[subscript 2]/4H-SiC / K. McDonald ; R.A. Weller ; L.C. Feldman ; G.Y Chung ; C.C. Tin ; J.R. Williams
Cathodoluminescence of Thin Films of Silicon Oxide on Silicon / M.V. Zamoryanskaya ; V.I. Sokolov ; I.M. Kotina ; C.G. Konnikov
Predictive Simulation of Void Formation during the Deposition of Silicon Nitride and Silicon Dioxide Films / C. Heitzinger ; A. Sheikholeslami ; H. Puchner ; S. Selberherr
Film Preparation and Characterization I / V.:
Direct-Write Deposition of Silicon Oxide - The Express Lane towards patterned thin Films / H.D. Wanzenboeck ; S. Harasek ; E. Bertagnolli ; M. Gritsch ; H. Hutter ; J. Brenner ; H. Stoeri ; U. Grabner ; G. Hammer ; P. Pongratz
Comprehensive Optical and Compositional Characterization of Silicon-based Thin Films for Photonics / J. Wojcik ; E.A. Irving ; J.A. Davies ; W.N. Lennard ; P. Mascher
Hydrogenated Amorphous Silicon Nitride Deposited by Dc Magnetron Sputtering / K. Mokeddem ; M. Sayhi ; M. Aoucher ; A.C. Chami ; M. Abdessalem
Properties of Annealed Silicon Oxynitride Layers for Optical Applications / K. Worhoff ; G.M. Hussein ; C.G.H. Roeloffzen ; L.T.H. Hilderink
Optimum Structure of Deposited Ultra Thin Silicon Oxynitride Film to Minimize Leakage Current / K. Muraoka ; K. Kurihara ; N. Yasuda ; H. Satake
Plasma Damage in Ultra-thin Gate Oxide Induced by Dielectric Deposition Processes: An Overview on Main Mechanisms and Characterization Techniques / J.-P. Carrere ; J.-C. Oberlin ; S. Bruyere ; P. Ferreira
Electrical Characterization of Thin Oxide Layers by Impedance Spectroscopy Using Silicon/Oxide/Electrolyte (SOE) Structures / M. Chemla ; V. Bertagna ; R. Erre ; F. Rouelle ; S. Petitdidier ; D. Levy
Scaling / Film Preparation and Characterization II / VI.:
Ultrathin Silicon Oxynitride Gate Dielectrics / E.P. Gusev ; C.P. D'Emic ; T.H. Zabel ; M. Copel
Scaling Issues for Advanced SOI Devices: Gate Oxide Tunneling, Thin Buried Oxide, and Ultra-Thin Films / J. Pretet ; A. Ohata ; F. Dieudonne ; F. Allibert ; N. Bresson ; T. Matsumoto ; T. Poiroux ; J. Jomaah ; S. Cristoloveanu
The Effect of the Oxide Network Structure on the Irradiation Behavior of SiO[subscript 2] Films on Silicon / A.G. Revesz ; H.L. Hughes
Atomistic Characterization of Radical Nitridation Process on Si(100) Surfaces / Y. Yasuda ; A. Sakai ; S. Zaima
Atomic, Electronic Structure and Charge Transport Mechanism in Silicon Nitride and Oxynitride / V.A. Gritsenko ; K.A. Nasyrov
Decoupled Plasma Nitridation of Ultra-Thin Gate Oxides for 60-90 nm Technologies / M. Bidaud ; F. Boeuf ; C. Dachs ; C. Parthasarathy ; F. Guyader
A Neutron Reflectivity Study of Silicon Oxide Thin Films / A. Menelle ; M.-L Saboungi
Rapid Thermal and Anodic Oxidations of LPCVD Silicon Nitride Films / Y.-P. Lin ; J.-G. Hwu
MOSFET Degradation with Reverse Biased Source and Drain During High-Field Injection through Thin Gate Oxide / B. Patel ; R.K. Jarwal ; D. Misra
Modeling / Optimization / Characterization / VII.:
Modeling and Electrical Characterization of MOS Structures with Ultra-Thin Gate Oxide / R. Clerc ; G. Ghibaudo
Conduction Modeling of Thick Double-Layer Nitride/Oxide Dielectrics / S. Evseev
Contribution of Individual Process Steps on Particle Contamination during Plasma CVD Operation / H. Setyawan ; M. Shimada ; Y. Imajo ; K. Okuyama
Plasma Nitridation Optimization for Sub-15A Gate Dielectrics / F.N. Cubaynes ; J. Schmitz ; C. van der Marel ; J.H.M. Snijders ; A. Veloso ; A. Rothschild ; C. Olsen ; L. Date
Recovery and Reversibility of Electrical Instabilities in Double-Layer Dielectric Films / A. Cacciato
Low-Temperature Oxidation for Gate Dielectrics of Poly-Si TFTs using High-Density Surface Wave Plasma / K. Azuma ; M. Goto ; T. Okamoto ; Y. Nakata
Characterization of MIS Tunnel Junctions by Inelastic Electron Tunneling Spectroscopy (IETS) / C. Petit ; G. Salace ; D. Vuillaume
Authors Index
Subject Index
Preface
Interface Characterization / I.:
Electrical Characterization Techniques for Semiconductor-Silicon Dioxide Interface - A Review / M.J. Deen
58.

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図書
editors, Bernd O. Kolbesen ... [et al.] ; sponsored by the Electrochemical Society. Electronics Division
出版情報: Pennington, NJ : Electrochemical Society, c2003  xii, 556 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-3
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Preface: ALTECH 2003 "Analytical Techniques for Semiconductor Materials and Process Characterization IV"
"Impurities: Metals, Non-Metals and Organics" / Part 1:
Copper Behavior in Bulk Silicon and Associated Characterization Techniques / T. Heiser ; A. Belayachi ; J.-P. Schunck
Quantification Issues of Trace Metal Contaminants on Silicon Wafers by Means of TOF-SIMS and ICP-MS / P. Rostam-Khani ; P. Vullings ; G. Noij ; W. Claassen
Determination of the Aluminum-Induced Oxide Charge by AC Surface Photovoltage Measurements in N-Type Silicon / H. Shimizu ; M. Ikeda ; R. Shin
Characterization of Heavy Metal Contamination by Capacitance-Frequency Method / K. Hara ; M. Takahashi ; H. Yoshida ; S. Kishino
In-line Copper Contamination Monitoring Using Non-Contact Q-V-SPV Techniques / M. Bohringer ; J. Hauber ; S. Passefort ; K. Eason
Recent Developments in Nuclear Methods in Support of Semiconductor Characterization / B. Brijs ; H. Bender ; C. Huyghebaert ; T. Janssens ; W. Vandervorst ; K. Nakajima ; K. Kimura ; A. Bergmaier ; G. Dollinger ; J. A. van den Berg
Determination of Oxygen in Semiconductor Silicon by Gas Fusion Analysis GFA--Historical and Future Trends / S. Pahlke
High Sensitivity Measurement of Nitrogen in Czochralski Silicon / M. Porrini ; M. G. Pretto ; R. Scala ; V. V. Voronkov
Spark Source Mass Spectrometric Analysis of Low Carbon Contents in Crystalline Silicon / B. Wiedemann ; J. D. Meyer ; H. C. Alt ; H. Riemann
Hydrogen Contamination and Defect Generation in p-type Silicon and Silicon-Germanium Schottky Barrier Test Structures / F. Volpi ; A. R. Peaker ; I. Berbezier ; A. Ronda
Analysis of Oxygen Thermal Donor Formation in n-type Cz-Silicon / J.M. Rafi ; E. Simoen ; C. Claeys ; A. Ulyashin ; R. Job ; W. Fahrner ; J. Versluys ; P. Clauws ; M. Lozano ; F. Campabadal
The Application of Synchrotron Radiation to Semiconductor Materials Characterization / R. Barrett
Ultra-trace Analysis of Light Elements and Speciation of Minute Organic Contaminants on Silicon Wafer Surfaces by means of TXRF in Combination with NEXAFS / B. Beckhoff ; R. Fliegauf ; G. Ulm ; J. Weser ; G. Pepponi ; C. Streli ; P. Wobrauschek ; T. Ehmann ; L. Fabry ; C. Mantler ; B. Kanngiesser ; W. Malzer
TXRF Characterization of Inhomogneous Solids: Influence of Surface Morphology / N. Alov ; K. Oskolok ; A. Wittershagen ; B. O. Kolbesen
Characterization of Trace Organic Contamination on Silicon Surfaces in Semiconductor Manufacturing / K. Saga ; T. Hattori
Characterization of Advanced Semiconductor Materials by Thermal Desorption Mass Spectrometry with Atmospheric, Pressure Ionization / L. Carbonell ; G. Vereecke ; S. Van Elshocht ; M. Caymax ; M. Van Hove ; K. Maex ; P. Mertens
Analysis of Trace VOCs' in Clean Room Air with PDMS/Carboxen SPME Fibers / L. Tuduri ; V. Teetaert ; V. Desauziers ; E. Coffre ; P. Dupont ; M. Camenzind
Cleaning Chemistry with Complexing Agents (CAs): Direct Concentration Measurement of CAs with HPLC / S. Metzger ; B.O. Kolbesen
Complexing Agents (CAs) for Semiconductor Cleaning Chemistries: Characterization of CA Lifetimes by UV/VIS-Spectroscopy / O. Doll
"Thin Films" / Part 2:
Stress Management in IC Manufacturing: [mu]-Raman Spectroscopy Revisited / L.F.T. Kwakman ; D. Delille ; M. Mermoux ; A. Crisci ; G. Lucazeau
Characterization and Metrology of Novel Materials Involved in Advanced CMOS Processes / C. Wyon
Physical Characterization of Thin HfO[subscript 2] Layers by the Combined Analysis with Complementary Techniques / T. Conard ; O. Richard ; J. Petry ; C. Defranoux ; P. Boher ; N. Rochat ; P. Mack ; J. Wolstenholme ; R. Vitchev ; L. Houssiau ; J-J. Pireaux
Analytical Characterization of Process Parameter Influence on the Initial Growth and Crystallinity of Atomic Layer Deposition HfO[subscript 2] Thin Films / D. Blin ; G. Rolland ; P. Holliger ; F. Martin ; J.-F. Damlencourt ; T. Lardin ; P. Besson ; S. Haukka ; M.-N. Semeria
Application of X-Ray Fluorescence Spectrometry in Characterization of High-k Ultra-Thin Films / C. Zhao ; F. Dortu ; S. DeGendt ; M. Heyns ; W. Besling ; J. W. Maes
Characterization of Nano-Laminate Structure Using Grazing Incidence XRD and ATR-FTIR / V. Consier ; G. Roebben ; O. Van Der Biest
High-Resolution Analysis of the HfO[subscript 2]-SiO[subscript 2] Interface by Soft X-Ray Photoelectron Spectroscopy / O. Renault ; D. Samour ; J. -F. Damlencourt ; A. -M. Papon ; S. Marthon ; N. T. Barrett
Ag Electrodeposition on n-InP Followed in Situ by Photoluminescence / I. Gerard ; C. Mathieu ; P. Tran-Van ; A. Etcheberry
Characterization by Electrochemistry and Chemical Surface Analysis of an Oxide Film on n-InP / N.C. Quach ; N. Simon
Charging Effects on Ferroelectric SBT Thin Films Imaged by Non-Contact Electrostatic Force Microscopy / N. Junghans
Two Dimensional Carrier Profiling Using Scanning Capacitance Microscopy / N. Duhayon ; T. Clarysse ; D. Alvarez ; P. Eyben ; M. Fouchier ; L. Hellemans
"Non-Destructive and Optical Methods" / Part 3:
Spectroscopic Ellipsometry in the VUV Range Applied to the Characterization of Atomic Layer Deposited HfO[subscript 2], Al[subscript 2]O[subscript 3] and HfAIO[subscript x] Thin Layers for High k Dielectrics / S. Bourtauld ; J. P. Piel
Optical Characterisation of High-? Materials Deposited by ALCVD / E. Bellandi ; B. Crivelli ; A. Elbaz ; M. Alessandri
Macroscopic and Microscopic Photoluminescence Mapping System Applicable to 300 mm Wafers / Z. Li ; M. Tajima ; R. Shimidzu
In-Line and Non-Destructive Analysis of Epitaxial Si[subscript 1-x-y]Ge[subscript x]C[subscript y] by Spectroscopic Ellipsometry and Comparison with Other Established Techniques / R. Loo ; P. Meunier-Beillard ; R. Delhougne ; T. Koumoto ; L. Geenen
Study by Spectroellipsometry of the InP Surface Evolution by Cerium Acidic Solution / B. Canava ; J. Vigneron ; M. Stchakovsky ; J. P. Gaston
Characterisation of Bulk and Surface Properties in Semiconductors Using Non-Contacting Techniques / A. Castaldini ; D. Cavalcoli ; A. Cavallini ; M. Rossi
"Characterization of Defects, Technology and Devices" / Part 4:
Focused Ion Beam Analysis of Cu/Low-k Metallization Structures
Preface: ALTECH 2003 "Analytical Techniques for Semiconductor Materials and Process Characterization IV"
"Impurities: Metals, Non-Metals and Organics" / Part 1:
Copper Behavior in Bulk Silicon and Associated Characterization Techniques / T. Heiser ; A. Belayachi ; J.-P. Schunck
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図書
editors, E.B. Stokes ... [et al.] ; sponsoring divisions, Electronics, Sensor
出版情報: Pennington, N.J. : Electrochemical Society, c2003  ix, 278 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-4
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Preface
III-V Optoelectronics / Session 1:
Novel Waveguide Photodetectors on InP with Integrated Light Amplification / J. Piprek ; D. Pasquariello ; D. Lasaosa ; J.E. Bowers
Improvement of Kink Characteristics of 850nm AlGaAs/GaAs Implant Vertical Cavity Emitting Lasers Utilizing Silicon Implantation Induced Disordering / H.C. Kuo ; Fang-I Lai ; Tao-Hung Hsueh ; Ya-hsien Chang ; Wen-chun Shu ; Li-Hung Lai ; S.C Wang
Effect of Post-Oxidation Annealing on VCSEL Device Performance / N.C Das ; W. Chang
Low Voltage Operation Phototransistor with InGaP/AlGaAs/GaAs Composite Emitter / S.W. Tan ; W.T. Chen ; M.Y. Chu ; W.S. Lour
III-V Devices and Processing / Session 2:
Observation of Current Gain Collapse in Large-area HBT with Rectangular Emitter and Etched Base / M.-K. Tsai ; S.-W. Tan ; W.-S. Lour ; Y.-J. Yang
Characteristics of Sulfur and InGaP-passivated InGaP/GaAs Heterojunction Bipolar Transistors
Interconnect Copper Metallization of InGaP HBT's using WN[subscript x] as the Diffusion Barrier / Shang-Wen Chang ; Edward Yi Chang ; Cheng-Shih Lee
Solvent-affected Chemistry at GaAs/sulfide Solution Interface / Mikhail V. Lebedev ; Thomas Mayer ; Wolfram Jaegermann
InP Electrochemistry / Session 3:
Anodic Behavior of InP: Film Growth, Porous Structures, and Current Oscillations / D.N. Buckley ; C. O'Dwyer ; E. Harvey ; T. Melly ; M. Serantoni ; D. Sutton ; S.B. Newcomb
A Mechanistic Study of Anodic Formation of Porous InP
Growth of Anodic Oxides on n-InP Studied by Electrochemistry and Surface Analysis: Correlation between Oxidation Methods and Passivating Properties / N. Simon ; N.C. Quach ; A. Etchberry
Localized Photoetching of n-InP, at Open-circuit Potential / Catherine Debiemme-Chouvy ; Anne Quennoy ; Isabelle Gerard
Poster Session
Investigation of Defect Passivation in 4H-SiC using Hydrogen Plasma and Effect of Post-Annealing / Myung Yoon Um ; In Sang Jeon ; Da Il Eom ; Bum Seok Kim ; Ho Keun Song ; Hoon Joo Na ; Dae Hwan Kim ; Jae Kyeong Jeong ; Hyeong Joon Kim
HRTEM Study of SiC Buried Layer formed by C+ Implantation in Silicon / Yumei Xing ; Yuehui Yu ; Zixin Lin
(Photo-)Electrochemistry at n-GaN Grown on Sapphire and on Si: A Comparitive Study / I.M. Huygens ; K. Strubbe
MOCVD Growth of InP/InGaAlAs Distributed Bragg Reflectors / J.Y. Tsai ; T.C. Lu ; S.C. Wang
Very Low Temperature Growth of c-axis oriented ZnO Thin Film on Si Substrates / Hyoun Woo Kim ; Kwang Sik Kim ; Chongmu Lee
Fabrication and NO2 Surface Photo Voltage Sensor Properties of Nanoporous Tin-Silica Film / Brian Yuliarto ; HaoShen Zhou ; Takeo Yamada ; Itaru Honma ; Keisuke Asai
Emerging Materials / Session 4:
Man-made Quantum Structures: From Superlattices to Quantum Dots / Raphael Tsu
Effects of Composition and Layer Thickness on the Magnetic and Structural Characteristics of GaMnN / G.T. Thaler ; M. Overberg ; R. Frazier ; C.R. Abernathy ; S.J. Pearton ; F. Ren ; Y.D. Park ; R. Rairigh ; J. Kelly ; J.S. Lee ; N. Theodoropoulou ; A.F. Hebard|p141
Diamond--the Next Generation Material for High Power Electronics? / A. Aleksov ; M. Schreck ; P. Schmid ; E. Kohn
III-Nitride Light Emitting Diodes / Session 5:
Deep Ultraviolet Light Emitting Diodes using AlGaN Quantum Well Active Region / M. Asif Khan ; Maxim Shatalov ; Vinod Adivarahan ; Jain Ping Zhang ; Ashay Chitnis ; Grigory Simin ; Jinwei Yang
Dramatically Improved Current Spreading in UV LED's via Si Delta-doping in the n-AlGaN Cladding Layer / S.F. LeBoeuf ; X.A. Cao ; L.B. Rowland ; J.J. Flynn ; G.R. Brandes
Carrier Capture and Recombination at Localized States in InGaN/GaN Light-Emitting Diodes / J.L. Garrett ; S.D. Arthur ; D.W. Merfeld
Wide Bandgap Materials and Electronic Devices / Session 6:
Instabilities in GaN based FET Structures--Nature and Alternative Structures / M. Neuburger ; I. Daumiller ; A. Krtschil ; A. Krost ; J. Van Nostrand ; T. Jenkins
AlGaN Power Rectifiers / J. Kim ; K. Baik ; B.P. Gila ; Y. Irokawa ; J.-I. Chyi ; S.S. Park ; Y.J. Park
Physics of Electron Injection-Induced Effects in III-Nitrides / Leonid Chernyak ; William Burdett
DC Characteristics of AlGaN/GaN Heterostructure Field-effect Transistors on Free-Standing GaN Substrates / B. Luo ; C.-C. Pan ; G.-T. Chen ; J.I. Chyi ; Y.J Park
Innovative Substrate Solutions for Wide Band Gap Materials: the Smart Cut Approach / F. Letertre ; N. Daval ; F. Templier ; L. DiCioccio ; C. Richtarch ; B. Faure ; A.M. Cartier ; I. Matko
Optical Properties of III-Nitride Materials / Session 7:
Microcathodoluminescence Characterization of III-Nitride Heterojunctions and Devices / L.J. Brillson ; G.H. Jessen ; S.H. Goss ; X.L. Sun ; S.T. Bradley ; B.D. White ; P.E. Smith ; T.E. Levin ; A.P. Young ; D.C. Look ; J.E. Van Nostrand ; G.D. Via ; J.K. Gillespie ; R.W. Dettmer ; J.S. Sewell ; R. Fitch
New Spectroscopic Data of Erbium Ions in GaN Thin Films / F. Pelle ; F. Auzel ; J.M. Zavada ; D.S. Lee ; A.J. Steckl
Spectroscopic Ellipsometry Applied to the Characterization of GaN and AlGaN/GaN Heterostructures / P. Boher ; S. Bourtault ; J.P. Piel
Infrared Photocurrent Spectroscopy of Epitaxial III-Nitride Materials / Edward B. Stokes ; Steven F. LeBoeuf
Fabrication and Characterization of GaN Nanorods / Chang-Chin Yu ; Jung-Wai Chang ; Chia-Feng Lin
Subject Index
Preface
III-V Optoelectronics / Session 1:
Novel Waveguide Photodetectors on InP with Integrated Light Amplification / J. Piprek ; D. Pasquariello ; D. Lasaosa ; J.E. Bowers
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図書
editor, S. Cristoloveanu ; assistant editors, G. Celler ... [et al.] ; sponsoring division, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2003  xi, 522 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-5
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Preface
SOI Materials / Part I:
The SOI odyssey / P.L.F. Hemment
Thin film transfer by Smart Cut technology beyond SOI / C. Mazure
Quality improvement of SIMOX wafers by utilizing nitrogen-doped Cz Silicon crystal / K. Kawamura ; I. Hamaguchi ; T. Sasaki ; S. Takayama ; Y. Nagatake ; A. Matsumura
Ultrathin SOI wafer fabrication and metrology / C. Maleville
Replacing the BOX with buried alumina: improved thermal dissipation in SOI MOSFETs / K. Oshima ; S. Cristoloveanu ; B. Guillaumot ; G. Le Carval ; H. Iwai ; M.S. Kang ; Y.H. Bae ; J.W. Kwon ; S. Deleonibus ; J.H. Lee
Studies on novel SOI-structure with AIN film as buried insulator / C. Lin ; M. Zhu ; C. Men ; Z. An ; M. Zhang
Fabrication of sub-micron active layer SSOI substrates using ion splitting and wafer bonding technologies / F.H. Ruddell ; M.F. Bain ; S. Suder ; R.E. Hurley ; B.M. Armstrong ; V.F. Fusco ; H.S. Gamble
Back-end analysis of SOI substrates incorporating metallic layers using a novel non-destructive picosecond ultrasonic technique / N.D. McCusker ; P. McCann ; W.A. Nevin
Silicon-on-insulator-multilayer structure fabricated by epitaxial layer tranfer / W. Liu ; X. Xie ; Q. Lin ; Z. Zhang
Status of 300 mm SOI material: comparisons with 200 mm / H. Hovel ; M. Almonte ; P. Tsai ; J.D. Lee ; S. Maurer ; R. Kleinhenz ; D. Schepis ; R. Murphy ; P. Ronsheim ; A. Domenicucci ; J. Bettinger ; D. Sadana
A study on selective Si[subscript 0.8]Ge[subscript 0.2] etch using polysilicon etchant diluted by H[subscript 2]O for three-dimensional Si structure application / S.M. Kim ; C.W. Oh ; J.D. Choe ; C.S. Lee ; D.G. Park
Estimation of oxygen dose by spectroscopic ellipsometry and investigation of oxide formation mechanism by FT-IR for 160[superscript +]-implanted Si wafers / H. Iikawa ; M. Nakao ; K. Izumi
Development of SiC substrate with buried oxide layer for electron-photon merged devices / S. Hirai
Very low Schottky barrier to n-type silicon with PtEr-stack silicide / X. Tang ; J. Katcki ; E. Dubois ; J. Ratajczak ; G. Larrieu ; P. Loumaye ; O. Nisole ; V. Bayot
Defects and electrical consequences in SOI buried oxides / H.J. Hovel
Relaxed SiGe-on-insulator substrates through implanting oxygen into pseudomorphic SiGe/Si heterostructure / Y. Wu ; Z. Di ; P. Chu
Effect of silicon nitride and silicon dioxide bonding on the residual stress in layer-transferred SOI / A. Tiberj ; J. Camassel ; N. Planes ; Y. Stoemenos ; H. Moriceau ; O. Rayssac
Double-Gate and Various SOI Devices / Part II:
Fully depleted SOI process and device technology for digital and RF application / F. Ichikawa ; Y. Nagatomo ; Y. Katakura ; S. Itoh ; H. Matsuhashi ; N. Hirashita ; S. Baba
Emerging silicon-on-nothing (SON) devices technology / T. Skotnicki ; S. Monfray ; C. Fenouillet-Beranger
60-nm gate length SOI CMOS technology optimised for "System-on-a-SOI-chip" solution / K. Imai ; S. Maruyama ; T. Suzuki ; T. Kudo ; S. Miyake ; M. Ikeda ; T. Abe ; S. Masuda ; A. Tanabe ; J-W. Lee ; K. Shibahara ; S. Yokoyama ; H. Ooka
High performance strained-SOI CMOSFETs / S-I. Takagi ; T. Mizuno ; T. Tezuka ; N Sugiyama ; T. Numata ; K. Usuda ; Y. Moriyama ; S. Nakaharai ; J. Koga ; T. Maeda
Real space transfer devices in SOI / S. Luryi
Issues in high performance FinFET and FDSOI transistor design / J. Kedzierski ; M. Ieong ; E. Nowak
Extremely scaled FinFETs and ultra-thin body SOI CMOS Devices / S. Balasubramanian ; L. Chang ; Y.-K. Choi ; D. Ha ; J. Lee ; P. Ranade ; S. Xiong ; J. Bokor ; C. Hu ; T.-J. King
Ultralow-power FD-SOI design for future mobile systems / T. Douseki ; H. Kyuragi
Status and development of future PD/SOI MOSFETs / S. Krishnan
Investigation of charge control related performances in double-gate SOI MOSFETs / V. Kilchytska ; T.M. Chung ; H. van Meer ; K. de Meyer ; J.P. Raskin ; D. Flandre
Substrate bias effects in SOI FinFETs / J. Pretet ; F. Dauge ; A. Vandooren ; L. Mathew ; B.-Y. Nguyen ; J. Jomaah
The nanoscale double-gate MOSFET for analog applications / D. Jimenez ; B. Iniguez ; J. Sune ; J.J. Saenz
The benefit of SOI technologies for low-voltage RFID applications / P. Villard ; B. Gomez ; J. De Pontcharra ; D. Save ; S. Chouteau ; E. Mackowiak
A novel CMOS memory cell architecture for ultra-low power applications operating up to 280[degree]C / D. Levacq ; V. Dessard
Multi-fin double-gate MOSFET fabricated by using (110)-oriented SOI wafers and orientation-dependent etching / Y. Liu ; K. Ishii ; T. Tsutsumi ; M. Masahara ; H. Takashima ; E. Suzuki
Impact of the graded-channel architecture on double gate transistors for high-performance analog applications / M.A. Pavanello ; J.A. Martino ; A. Kranti ; J.-P. Raskin
Characteristics of two types of MEMS resonator structures in SOI applications / S. Myllymaki ; E. Ristolainen ; P. Heino ; A. Lehto ; K. Varjonen
High-voltage super-junction SOI-LDMOSFETs with reduced drift length / J.M. Park ; T. Grasser ; S. Selberherr
Comparative study of the dynamic performance of bulk and FDSOI MOSFET by means of a Monte Carlo simulation / R. Rengel ; D. Pardo ; M.J. Martin
Partially depleted SOI dynamic-threshold MOSFET for low-voltage and microwave applications / M. Dehan ; D. Vanhoenacker
Figures-of-merit of intrinsic, standard-doped and graded-channel SOI and SOS MOSFETs for analog baseband and RF applications
Comparison of SOI, poly-Si TFT and bulk Si MOS performance using gm/ID methodology / K. Takatori
Optimization of ultra-thin body, fully-depleted SOI device, with raised source/drain / J. Egley ; B. Winstead ; E. Verret ; B. White
Device Physics and Modeling / Part III:
Device models for silicon-on-insulator (SOI) insulated-gate PN-junction devices for electrostatic discharge (ESD) protection circuit design / Y. Omura ; S. Wakita
Evidence for a "linear kink effect" in ultra-thin gate oxide SOI MOSFETs / A. Mercha ; E. Simoen ; J.-M. Rafi ; C. Claeys ; N. Lukyanchikova ; M. Petrichuk ; N. Garbar
An accurate model for threshold voltage and S-factor of partially-depleted surrounding gate transistor (PD-SGT) / Y. Yamamoto ; M. Hioki ; R. Nishi ; H. Sakuraba ; F. Masuoka
Reduction of pass-gate leakage by silicon-thickness thinning in double-gate MOSFETs / W. Sakamoto ; T. Endoh
Accurate and efficient method for accelerated history effect simulations / T. Poiroux ; G. Labourey ; P. Flatresse ; O. Faynot ; M. Belleville ; D. Souil ; B. Giffard
Electron mobility in strained-Si inversion layers grown on SiGe-on-insulator substrates / F. Gamiz ; J.B. Roldan ; A. Godoy ; P. Cartujo-Cassinello ; F. Jimenez-Molinos
Strained Si/SiGe channels: a new performance advantage for PD/SOI CMOS / W. Zhang ; J.G. Fossum
Modeling of Coulomb scattering of electrons in ultrathin symmetrical DG SOI transistor / J. Walczak ; B. Majkusiak
Comparison of partially and fully depleted SOI transistors down to the sub 50-nm-gate length regime / L. Dreeskornfeld ; J. Hartwich ; E. Landgraf ; R.J. Luyken ; W. Rosner ; T. Schulz ; M. Stadele ; D. Schmitt-Landsiedel ; L. Risch
Saturation current model for the n-channel G[superscript 4]-FET / B. Dufrene ; B. Blalock ; M. Mojarradi ; E. Kolawa
Quasi-three-dimensional device simulation of fully depleted MOSFET/SOI focused on surface roughness
Threshold voltage quantum simulations for ultra-thin silicon-on-insulator transistors / J. Lolivier ; F. Balestra
Impact of quantum-mechanical effects on the double-gate MOSFET characteristics / G. Ghibaudo
Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 [mu]m floating-body partially-depleted SOI MOSFET at low temperature / K. De Meyer
SOI thermal resistance and its application to thermal modeling of SOI MOSFETs / M.-C. Cheng ; F. Yu
Fully-quantum theory of SOI MOSFETs / T.J. Walls ; V.A. Sverdlov ; K.K. Likharev
Oxidation simulation of silicon nanostructure on silicon-on-insulator substrates / M. Uematsu ; H. Kageshiwa ; K. Shiraishi
Characterisation and Reliability Issues / Part IV:
Characterization of SOI wafers by photoluminescence spectroscopy, decay and micro/macro-mapping / M. Tajima
Feasibility of surface photovoltage based characterization of ultra-thin SOI wafers / L. Lukasiak ; E. Kamieniecki ; A. Jakubowski ; J. Ruzyllo
Analysis of soft errors in floating channel type surrounding gate transistor (FC-SGT) DRAM cells / F. Matsuoka
Radiation damage in deep submicron partially depleted SOI CMOS / J.M. Rafi ; X. Serra-Gallifa ; M. Kokkoris ; E. Kossionides ; G. Fanourakis
Study of the leakage drain current in graded-channel SOI nMOSFETs at high-temperatures / M. Bellodi
Radiation response of SOI CMOS transistors/4M SRAMs fabricated in UNIBOND substrates / S.T. Liu ; W. Heikkila ; K. Golke ; B. Stinger ; M. Flanery ; A. Hurst ; G. Panning ; G. Kirchner ; W.C. Jenkins
Nature of high-temperature charge instability of fully depleted SOI MOSFETs / A.N. Nazarov ; V.S. Lysenko ; J.P. Colinge
Control of SEU in SOI SRAMs through carrier lifetime engineering / S. Mitra ; D.P. Ioannou ; D.E. Ioannou
Evaluation of commercial ultra-thin SOI substrates using confocal laser inspection system / A. Ogura ; O. Okabayashi
Extraction of high frequency noise parameters of 0.25 [mu]m partially depleted silicon-on-insulator MOSFET: impact of the high resistivity substrate / R. Daviot ; O. Rozeau ; N. Abouchi ; A. Grouillet ; L. Tosti
Temperature and magnetic field dependence of the carrier mobility in SOI wafers by the pseudo-MOSFET method / C. Rossel ; D. Halley
Carrier lifetimes in SOI material
Total dose radiation hardness of double-gate ultra-thin SOI MOSFETs / C.R. Cirba ; R.D. Schrimpf ; L.C. Feldman ; D.M. Fleetwood ; K.F. Galloway
Steady-state characterization of partially depleted SOI CMOS gates / A. Bracale ; E. Dupont-Nivet ; J.-L. Pelloie
Changes in the parameters of silicon-on-insulator structures under irradiation / I.V. Antonova ; D.V. Nikolaev ; O.V. Naumova ; S.A. Smagulova ; V.P. Popov
Spectroscopic ellipsometry characterization of the interfacial roughness in SIMOX wafer / W.J. Li ; Z.R. Song ; K. Tao ; Y.H. Yu ; X. Wang ; S.C. Zou
Subject Index
Author Index
Preface
SOI Materials / Part I:
The SOI odyssey / P.L.F. Hemment
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図書
editors, M.D. Allendorf, F. Maury, F. Teyssandier ; sponsoring divisions, High Temperature Materials, Electronics, Dielectric Science and Technology
出版情報: Pennington, NJ : Electrochemical Society, c2003  2 v. (xxviii, 1570 p.) ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-8
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図書
editors, P.C. Chang ... [et al.] ; sponsoring division, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2002  ix, 326 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-14
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図書
editors, J.L. Davidson ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2000  xiv, 532 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-32
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図書
editors, R.E. Novak ... [et al.] ; assistant editors, L. Shive ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c2000  xiii, 614 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-36
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図書
editors, R.L. Opila ... [et al.]
出版情報: Pennington, N. J. : Electrochemical Society, c2000  xii, 644 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-37
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図書
editor, Laura Mendicino
出版情報: Pennington, NJ : Electrochemical Society, c2000  viii, 230 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-7
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目次情報: 続きを見る
PFC Emissions Reduction / A.:
An Efficient, Highly Reliable Plasma Tool for PFC Abatement / X. Chen ; W. Holber ; M. Peter
Litmas Plasma Abatement Long-Term Reliability Test / V. Vartanian ; L. Beu ; T. Stephens ; J. Rivers ; B. Perez ; M. Kiehlbauch ; E. Tonnisand D. Graves
Optimization of a C[subscript 2]F[subscript 6] Clean for an Applied Materials' TEOS PECVD Process: Reduced PFC Emissions and Faster Clean Times / A. D. Johnson ; W. R. Entley ; R. N. Vrtis ; J. Langan ; P. Maroulis ; C. M. Chen ; C. T. Chen ; Y. C. Chang ; O. H. Yam
Chamber Clean Optimization for Silicon Carbide Films Using C[subscript 3]F[subscript 8] in a Novellus Concept One PECVD System / C. Beatty ; K. Sonti ; J. Williams ; L. Zazzera ; L. Tousignant ; S. Kesari
Evaluation of the Applied Materials Remote Clean Technology for Lamp Heated CVD Chambers for Perfluorocompound (PFC) Emissions Reduction / L. Mendicino ; C. Nauert ; J. Flood ; P. T. Brown ; A. Atherton ; T. Nowak ; D. Silvetti
Process Emissions Characterization / B.:
High Pressure Sampling Mass Spectrometry of Semiconductor Tool Process Emissions / B. Baker ; J. Arnold ; S. Quarmby ; M. Platt
Air Monitoring and Odor Elimination in a Semiconductor Photolithography Area / M. Villars ; A. Sevier ; D. Kaczmarik
Continuous Real-Time Detection of Molecular Fluorine (F2) Emitted as a By-Product Of CVD and Etch Processes / C. Laush
Point of Use Abatement for CVD Precursors and Reaction Products / P. Brown ; K. Reid ; J. Van Gompel
FTIR Analysis of a New High K Gate Material for MOCVD Applications / V. Cole
Alternative Clean Processes and Water Usage Reduction / C.:
Manufacturing Qualification of an All Dry DeVeil Plasma Process / D. Dopp ; L. Mikus ; A. Horn ; R. Bersin ; H. Xu ; M. Boumerzoug
EHS Concerns with Ozonated Water Spray Processing / K. McCormack ; K. Barbee
An Environmentally Benign BEOL Clean / K. Shrinivasan ; K. Reinhardt ; A. Shimanovich ; P. Sadkowski
Reduction of De-ionized Water Usage in Photoresist Stripping Processes / T. Kamal ; D. W. Hess
Microbial Control in Ultra-pure Water During Ultra-low Flow Conditions / B. Hoyt ; J. Molloy
General Technologies / D.:
Addressing the Environment, Safety and Health Challenges of the 1999 International Technology Roadmap for Semiconductors / S. Gibson
Risk-Based Evaluation of Bulk Anhydrous Hydrogen Chloride Delivery Alternatives Used in the Semiconductor Industry / P. T. Brow
Copper Removal from Chemical Mechanical Polishing Effluent / C. Riley ; J. Filson
The Environmental Value Systems (ENV-S) Analysis: Application to CMP Effluent Treatment Options / N. Krishnan ; S. Thurwachter ; P. Sheng ; T. Francis
Development and Implementation of an ISO Modeled Environmental, Health and Safety Management System / T. Nasi ; T. McCay ; R. Reblin
Safety and Environmental Concerns of CVD Copper Precursors / B. Zorich ; J. Norman ; M. Majors
Treatability of Chemical Mechanical Planarization (CMP) Wastewater / B. J. Davis ; S. Sue
PFC Emissions Reduction / A.:
An Efficient, Highly Reliable Plasma Tool for PFC Abatement / X. Chen ; W. Holber ; M. Peter
Litmas Plasma Abatement Long-Term Reliability Test / V. Vartanian ; L. Beu ; T. Stephens ; J. Rivers ; B. Perez ; M. Kiehlbauch ; E. Tonnisand D. Graves
67.

図書

図書
editors, D. N. Buckley ... [et al.] ; sponsoring divisions, Electronics, Sensor
出版情報: Pennington, N.J. : Electrochemical Society, c2004  ix, 282 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2004-02
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68.

図書

図書
editors, Charles E. Hunt ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001-c2005  4 v. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-35, 2001-27, 2003-19, 2005-02
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69.

図書

図書
editor, G.S. Mathad ; assistant editors, H.S. Rathore ... [et al.] ; [cosponsored by] Dielectric Science & Technology, Electronics, and Electrodeposition Divisions [of the Electrochemical Society]
出版情報: Pennington, N.J. : Electrochemical Society, c2001-2003  2 v. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-27, 2003-10
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目次情報: 続きを見る
Preface
Copper Deposition
Relation of Contact Resistance Reduction and Process Parameters of Bonded Copper Interconnects in Three-Dimensional Integration Technology / K.N. Chen ; A. Fan ; C.S. Tan ; R. Reif
ECD Seed Copper Layer for Seed Enhancement in Advanced Interconnects / P.H. Haumesser ; S. Da Silva ; M. Cordeau ; X. Avale ; O. Pollet ; T. Mourier ; G. Passemard ; R. Baskaran ; T. Ritzdorf
Ultra-thin Tungsten CVD Nucleation Layer for Sub-100 nm Contact Applications / J. Gupta ; J. Sudijono ; L.C. Hsia ; S. Singh
Three-Dimensional Simulation of Superconformal Copper Deposition Based on the Curvature-Enhanced Acceletator Coverage Mechanism / E. Bar ; J. Lorenz ; H. Ryssel
Copper Electrodeposition of High Aspect Ratio Vias for Three-Dimensional Packaging / K. Kondo ; T. Yonezawa ; M. Tomisaka ; H. Yonemura ; M. Hoshino ; Y. Taguchi ; K. Takahashi
Copper Electroplating Process with Improved Stability, Conductivity and Total. Cost of Ownership / R. Preisser ; T. Dretschkow ; H. Fuerhaupter
Electroplating of Copper-Tin Alloys / R. Chebiam ; C-C. Cheng ; H. Simka ; A. Budrevich ; V. Dubin
Interactions between the Conditions of Copper Electrodeposition and the Density of Hillocks / S. Petitdidier ; M. Gregoire ; S. Segaud ; S. Courtas ; M. Juhel ; J.P. Jacquemin ; L. Dumas
Detection of Accelerator Breakdown Products in Copper Plating Baths / M. Pavlov ; E. Shalyt ; P. Bratin ; D.M. Tench
Copper Nucleation on Platinum in the Presence of Additives in Acid Copper Solution / J. Han ; M. King ; M. Stawasz ; T. Baum
An in-situ FTIR Study on Palladium Displacement Reaction for Autocatalytic Electroless Copper Deposition / Y-J. Oh ; C-H. Chung
New Additives for Super-Conformal Electroplating of Ag Thin Film for ULSI / J.J. Kim ; E.J. Ahn ; J.M. Seo
The Role of Chloride Ion in Copper Electrodeposition from Acidic Baths Containing Cl[superscript -], PEG, and SPS / M. Tan ; J.N. Harb
The Influence of 2,2'-Dipyridyl on Non-Formaldehyde Electroless Copper Plating / J. Li ; H. Hayden ; P.A. Kohl
Influence of the Anode in the Damascene Process Investigated by Electro-Chemical Impedance Spectroscopy / C. Gabrielli ; P. Mocotrguy ; H. Perrot ; A. Zdunek ; D. Nieto-Sanz ; M.C. Clech
Investigation of Copper Bath Ageing in the Damascene Process by Electro-chemical Impedance Spectroscopy / P. Mocoteguy
Barrier Films
The Proposal of All-Wet Fabrication Process for ULSI Interconnects Technologies--Application of Electroless NiB Deposition to Capping and Barrier Layers / M. Yoshino ; Y. Nonaka ; T. Yokoshima ; T. Osaka
Thickness Effect on the Diffusion Barrier Properties of ZrN in Cu/ZrN/Si Systems / C-S. Chen ; C-P. Liu ; H-G. Yang ; C-Y. A. Tsao
Characterization of Electroless Plated CoWB Barrier Films / V. Mathew ; R. Chatterjee ; S. Garcia ; L. Svedberg ; Z-X. Jiang ; R. Gregory ; K-H. Lie ; K. Yu
Effect of Ta[subscript 2]N Crystallinity on Diffusion Barrier Properties / H-C. Chung
Use of Ti[subscript x]TiN as Cap Layer for the Formation of Cobalt Silicide / M. Vulpio ; D. Fazio ; M. Bileci ; D. Mello ; C. Gerardi
Ruthenium-Based Copper Diffusion Barrier: Studied by Electrochemistry, SIMS Depth Profiling, and Sheet Resistance Measurements / O. Chyan ; R. Chan ; T. Arunagiri ; R.M. Wallace ; M.J. Kim ; T. Hurd
Low-k Inter Level Dielectric Films and CMP
A Novel Approach for Dual Damascene Trench Etch for 90 nm Low-k Inter-Connect with No Middle Etch Stop Layer / T.Q. Chen ; H. Cong ; W.P. Liu ; Y.K. Siew ; Y. Pradeep ; R. Jaiswal ; A. Jain ; I. Sim
Electrical and Mechanical Properties of Nitrogen and Fluorine Incorporated Organosilicate Glass Prepared by Plasma Enhanced Chemical Vapor Deposition / S-K. JangJian ; W-S. Hwang ; S-W. Chen ; K-H. Wei ; Y-L. Wang
Development of Spin-on Dielectric (SiLK) Etch Process for 0.13 [mu] Cu-Low k Interconnects Technology / B. Ramana Murthy ; Y.W. Chen ; X.T. Chen
The Pore Structure, Property, and Performance of a Spin-on Porous Low-k Dielectric / Y. Liu ; B. Foran ; D. Gidley ; W-L. Wu ; H. Shirataki ; H. Hanahata
Evaluation of Low-k Porous Silica Film Incorporated with Ethylene Groups / Y. Uchida ; M. Oikawa ; Y. Itoh ; K. Ishida
Strip Process Optimization for Porous ULK Films / I.J. Kalinowski ; C. Bourlot ; A. Marfoure ; O. Louveau ; S. Li ; J. Su ; G.W. Hills ; D. Louis
Characterization of Plasma Strip Processes on OSG Low-k Dielectric Films / K. Ostrowski ; I.J. Kalinovski
Reliability Characterization of Organic Ultra Low-k Film Using Voltage Breakdown / A. Krishnamoorthy ; B. Ramany Murthy ; K.Y. Yiang ; W.J. Yoo
Process-Induced Voiding in Copper Interconnect Metallization / P. Lindgren ; K. Downes ; S. Kole ; W. Murphy ; E. Cooney III ; M. Goldstein ; J. Chapple-Sokol
Planarization of Copper Layer for Damascene Interconnection by Electrochemical Polishing in Alkali-Based Solution / G-S. Park ; C-W. Chung
Characterization of a Colloidal Silica Slurry for 0.13 [mu]m Devices in a Copper CMP Process / J. Cadenhead ; G. Huffman ; D. Lewis ; A. Pamatat ; J. Verizzo ; S. Usmani ; J. Siddiqui
Mechanisms of Using Organic Acids to Clean Copper Surfaces / T. Yagishita ; K. Ishikawa ; M. Nakamura
Advanced Packaging
3-Dimensional Chip Stacking for High-Density Electronic Packaging / K. Tanida ; M. Umemoto ; K. Kojiama ; M. Ishino ; M. Bonkohara
Author Index
Subject Index
Preface
Copper Deposition
Relation of Contact Resistance Reduction and Process Parameters of Bonded Copper Interconnects in Three-Dimensional Integration Technology / K.N. Chen ; A. Fan ; C.S. Tan ; R. Reif
70.

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図書
editors, F. Roozeboom ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c2003-2004  2 v. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-14, 2004-01
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目次情報: 続きを見る
Preface
Conference organization
Advances in Rapid Thermal Processing Equipment / Section I:
Intra-die temperature non-uniformity related to front side emissivity dependence during Rapid Thermal Annealing / C. Laviron ; R. Lindsay ; A. Michallet ; A. Halimaoui ; E. Granneman1.:
Pattern effects during spike annealing of ultra-shallow implants / J. Niess ; Z. Nenyei ; W. Lerch ; S. Paul2.:
Time-resolved analysis of flash-assist RTP thermal pulse progression in SOI and bulk silicon wafers / K. Elliott ; S. McCoy ; D.M. Camm ; J.C. Gelpey ; R. Tichy ; L. Larson3.:
A novel hot-wall furnace-based RTP System with sequenced H[subscript 2] and wet-H[subscript 2] for advanced dielectric applications / Y. Liu ; J. Hebb4.:
Ultra-Shallow Source/Drain Junctions by Ion-Implantation and Rapid Thermal Annealing / Section II:
Junction scaling for 90 nm and beyond / J. Hwang ; H. Kennel ; P. Packan ; M. Taylor ; M. Liu ; R. James ; M. Kuhn5.:
Rapid thermal solid phase epitaxy annealing for ultra-shallow junction formation / D. F. Downey ; E. A. Arevalo6.:
Cluster ion beam process technology / I. Yamada ; N. Toyoda ; J Matsuo ; L P. Allen7.:
A first principles examination of the diffusion of boron in silicon during Microwave Rapid Thermal Processing / K. Thompson ; C.J. Bonifas ; R.F. Cooper ; J.H. Booske8.:
Structure and thermal evolution of small clusters found after ultralow-energy high-dose boron implantation in Si / X. Hebras ; F. Cristiano ; N Cherkashin ; B. Pawlak ; R. Surdeanu ; A. Claverie9.:
Relation between thermal evolution of interstitial defects and Transient Enhanced Diffusion in silicon / B. Colombeau ; P. Calvo ; N. Cherkashin ; Y. Lamrani ; E. Scheid ; B. de Mauduit ; E. Lampin10.:
Ultra-shallow junction formation: current manufacturability issues and future prospects / A Agarwal ; H. Gossmann ; M. Ameen ; A. Stevenson ; M. Jones11.:
Perfomance enhancements for 50-nm PMOS by angled pre-amorphization implants and fluorine implants / P.R. Chidambaram ; S. Ekbote ; S. Chakravarthi ; A. Chatterjee ; C.F. Machala ; S F. Johnson12.:
The role of fluorine with Ge pre-amorphization in forming pMOS junctions for the 65-nm CMOS technology node / B.J. Pawlak ; X. Pages ; W. Vandervorst ; K. v. d. Jeugd13.:
Dose loss and diffusion in BF[subscript 2]-implanted silicon during Rapid Thermal Annealing / O. Dokumaci ; P. Ronsheim ; S. Hegde ; C. Cabral, Jr.14.:
Ultra-shallow implant anneal using a short-wavelength flash light source / W.S. Yoo ; K. Kang15.:
Ultra-Shallow Source/Drain Junctions by Alternative Doping and Annealing Methods / Section III:
Electrical characterization of silicon diodes formed by laser annealing of implanted dopants / L.K. Nanver ; J. Slabbekoorn ; A. Burtsev ; T.L.M. Scholtes ; F. Simon ; H.-J. Kalhert ; J.W. Slotboom16.:
Laser thermal processing for ultra-shallow junction formation: experiment and modelling / J. Venturini ; M. Hernandez ; T. Sarnet ; G. Kerrien ; J.L. Santailler ; J. Boulmer17.:
Excimer laser annealing: a solution for the future technology nodes? / V. Privitera ; A. La Magna ; G. Mannino ; G. Fortunato ; L. Mariucci ; B.G. Svensson18.:
Ultra-shallow junction formation by Gas Immersion Laser Doping (GILD) on silicon bulk and SOI substrate / D. Debarre ; M. N. Semeria19.:
Advanced Contacts to Ultra-Shallow Source/Drain Junctions / Section IV:
Sidewall grooving on narrow CoSi[subscript 2] lines / O. Chamirian ; M. de Potter ; A. Lauwers ; O. Richard ; C. Vrancken ; K. Maex20.:
High resolution investigation of atomic interdiffusion during Co/Ni/Si phase transistion / A. Alberti ; B. Cafra ; C. Bongiorno ; F. La Via ; C. Spinella21.:
Silicide scaling: Co, Ni or CoNi? / J.A. Kittl ; A. Akheyar ; M. Van Dal22.:
Ni-based silicides: material issues for advanced CMOS applications / J.G. Lisoni ; M. De Potter23.:
Study on Ge/Si ratio and formation of Ni/ P[superscript +]Si[subscript 1-x]Ge[subscript x] and Ni/Si/ P[superscript +]Si [subscript 1-x]Ge[subscript x] / T.-H. Yang ; E.Y. Chang ; G. Luo ; K.M. Chen ; T.-Y. Yang ; H.-C. Tseng ; C.-Y. Chang24.:
Design of experiment on the Co salicide process: impact of thickness and anneals on main CMOS Parameters / F. Wacquant ; C. Regnier ; M.-T. Basso ; C. Julien ; A. Humbert ; C. Jenny25.:
Co-silicide, Co(Ni)-silicide and Ni-silicide to source/drain contact resistance / R. Jonckheere ; P. Leunissen ; M. van Dal ; G. Tempel26.:
Advanced MOS Gate Stacks I / Section V:
Application of high-k dielectrics in CMOS technology and emerging new technology / R. Liu ; T.-B. Wu27.:
Growth and characterization of Al[subscript 2]O[subscript 3]:HfO[subscript 2] nanolaminate films deposited by Atomic Layer Deposition / C.P. D'Emic ; E.P. Gusev ; M. Copel ; J. Newbury ; H. Hovel ; P. Kozlowski ; J. Bruley ; R. Murphy28.:
Batch Atomic Layer Deposition for MIM capacitors / R. de Blank ; G.J. Snijders ; S. Beulens ; L. Vandezande ; R. Wilhelm ; A. Hasper29.:
First principles modelling of the deposition process for high-k dielectric films / S.D. Elliott30.:
Pathways for advanced transistors using hafnium-based oxides by Atomic Layer Deposition / A.R. Londergan ; S. Ramanathan ; J. Winkler ; T.E. Seidel ; J. Gutt ; G. Brown ; R. W. Murto31.:
Development of 12 A plasma nitrided gate dielectrics through characterization of process, physical and electrical parameters / G. Miner ; P. Kraus ; T.-C. Chua ; J. Holland ; C. Olsen ; K. Ahmed ; A. Hegedus ; S. Hung ; F. Nouri ; A. Herrera-Gomez ; A. Lepert ; P. Meissner32.:
Advanced layer-by-layer deposition and annealing process for high-quality high-k dielectrics formation / K. Iwamoto ; T. Tominaga ; T. Yasuda ; T. Nabatame ; A. Toriumi33.:
Rapid thermal annealing of atomic layer deposited hafnium-silicate / poly-silicon layers / Z.M. Rittersma ; D. Massoubre ; F. Roozeboom ; M.A. Verheijen ; J.G.M. van Berkum ; Y. Tamminga ; T. Dao ; J.H.M. Snijders ; E. Vainonen-Ahlgren ; E. Tois ; M. Tuominen ; S. Haukka34.:
Rapid thermal process Atomic Layer Deposition of high dielectric constant ultrathin ZrO[subscript 2] for sub-65 nm silicon CMOS technology / M. Fakhruddin ; R. Singh ; K. F. Poole ; S. V. Kondapi ; S. Kar35.:
Ultrathin plasma nitrided oxide gate dielectrics for sub-100 nm generation CMOS technology / J. Jeon ; P. Yeh ; B. En ; K. Wieczorek ; F. Graetsch ; J. Bernard ; H.S. Kim ; E. Ibok ; R. Zhao ; B. Ogle36.:
Applications of SiGe Alloys in Future Device Technologies and Other Applications / Section VI:
High-k dielectric processing for germanium channel MOSFETs / P.C. McIntyre ; D. Chi ; H. Kim ; C.O. Chui ; B.B. Triplett ; K.C. Saraswat37.:
Fabrication of SiGe-on-Insulator substrates for high-performance strained SOI-MOSFETs by germanium condensation technique / T. Tezuka ; N. Sugiyama ; T. Mizuno ; S. Nakaharai ; S. Takagi38.:
MOSFET channel engineering using strained Si, SiGe and Ge channels / E.A. Fitzgerald ; M.L. Lee ; C.W. Leitz ; D.A. Antoniadis39.:
Growth of nickel silicide quantum dot arrays on epitaxial Si[subscript 0.7]Ge[subscript 0.3] on (001) silicon with a sacrificial amorphous silicon interlayer / L. J. Chen ; W. W. Wu ; S. L. Chengand ; S. W. Lee40.:
Electrical characterization of thick localized SOI substrates manufactured by Rapid Thermal Processing for high-voltage integrated circuits / O. Gonnard ; S. Roux ; F. Bernizet ; M. Bafleur ; J.-M. Dilhac41.:
Advanced MOS Gate Stacks II / Section VII:
The diffusion, activation and microstructure evolution of phosphorus implanted into polysilicon / L.S. Adam ; Y. Wang ; M. Mansoori42.:
Roadblocks and detours for poly-silicon / metal-oxide MOS integration / D.C. Gilmer ; C. Hobbs ; J. Grant ; R. Hegde ; H. Tseng ; D. Triyoso ; D. Roan ; R. Cotton ; J. Smith ; V. Dhandapani ; R. Garcia ; L. Dip ; R. Rai ; J. Conner ; S. Samavedam ; B. Taylor ; P. J. Tobin43.:
Poly-Si gate CMOS with hafnium silicate gate dielectric / S. Kher ; C. Metzner ; D. Gilmer ; A. Franke ; L. Hebert ; M. Azrak ; D. Sing ; T. Stephens ; C. Scrogum ; V. Becnel ; B. White ; P. Tobin44.:
TaN metal gate MOSFETs with aggressively scaled HfO[subscript 2] dielectrics / R. Lander ; T. Schram ; G.S. Lujan ; J. Hooker ; J. Vertommen ; S. Lee ; W. de Weerd ; W. Boullart ; S. van Elshocht ; R. Carter ; S. Kubicek ; K. Demeyer ; S. De Gendt ; M. Heyns|p36745.:
Evaluation of CMOS gate metal materials using in situ characterization techniques / C. Lavoie ; A.S. Ozcan ; R.S. Amos ; V. Narayanan ; J.L. Jordan-Sweet ; J.M.E. Harper46.:
Selective oxidation of tungsten gate stacks in high-volume DRAM production / G. Roters ; R. Hayn ; W. Kegel ; O. Storbeck ; S. Frigge ; G. Feldmeyer ; H. J. Meyer ; E. Schroer47.:
New metal gate architecture achieved by Chemical Vapor Deposition for a complete tunnel fill / F. Leverd ; S. Harrison ; P. Coronel ; B. Tavel ; T. Skotniki48.:
Silicon damage and dopant behaviour studies of rapid thermally processed arsenic-implanted silicon / D. Girginoudi ; N. Georgoulas ; A. Thanailakis ; E. Polychroniadis49.:
High-k Dielectrics for Advanced Transistors and Capacitors / Section VIII:
Effect of starting surface in Atomic Layer Deposition / W.-M. Li ; J.W. Maes50.:
Charges in HfO[subscript 2] ALD gate dielectrics / G. Bersuker ; P. Zeitzoff ; Y. Kim ; A. Hou ; C. Lim ; C. Young ; P. Lysaght ; M. Gardner ; H. R. Huff51.:
Atomic Layer Deposition of high-k metal oxides for gate and capacitor dielectrics / Y. Senzaki ; S.G. Park ; R. Higuchi ; H. Chatham ; L. Bartholomew ; S. Al-Lami ; C. Barelli ; S.-I. Lee ; A. Helms, Jr.52.:
Effect of thermal annealing on mist-deposited HfSiO[subscript 4]/SiO[subscript x]/Si structures / K Chang ; D.-O. Lee ; K. Shanmugasundaram ; P. Roman ; J. Shallenberger ; J. Wang ; P. Mumbauer ; R. Grant ; J. Ruzyllo53.:
Modelling of HfO[subscript 2] film deposition from Hf(mmp)[subscript 4] / T. Yano ; A. Kagatsume ; T. Fujimoto ; M. Hoshino ; T. Watanabe ; M. Asai ; S. Horii ; H. Miya ; M. Kamiya ; K. Hirao54.:
HfO[subscript 2] Films by UV-assisted and thermal injection liquid source MOCVD / B.J. O'Sullivan ; P.K. Hurley ; M. Modreanu ; F. Roussel ; H. Roussel ; M.A. Audier ; C. Jimenez ; C. Dubourdieu ; J.P. Senateur ; H. Davies ; S. Rushworth ; I.W. boyd ; Q. Fang ; J.M. Decams ; H. Guillon55.:
Performance of nitrided Hf-silicate high-k gate dielectrics / Q. Xiang ; F. Arasnia ; J. Zhang ; J.-S. Goo ; A. Halliyal ; B. Clark-Phelps ; H. Zhong56.:
Atomic Vapor Deposition of complex high-k thin films for sub-90 nm CMOS devices / J. Lindner ; S. Miedl ; M. Schumacher ; P. Lehman ; U. Weber ; P.K. Baumann ; T. McEntee57.:
Investigation of HfO[subscript 2] dielectrics for inter-poly dielectrics and Metal-Insulator-Metal capacitors / T.-H. Perng ; C.-H. Chien ; C.-W. Chen58.:
Author Index and Key Word Index / Section IX:
Author Index
Key Word Index
Preface
Conference organization
Advances in Rapid Thermal Processing Equipment / Section I:
71.

図書

図書
editors, C.L. Claeys ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001-2005  3 v. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-2, 2003-6, 2005-06
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目次情報: 続きを見る
Preface
Electronics Division Award Address
Radical Reaction Based Semiconductor Manufacturing for Very Advanced ULSI Process Integration / T. Ohmi
Keynote Papers
From Ambient Intelligence to Silicon Process Technology / C.J. van der Poel
From the Lab to the Fab: Transistors to Integrated Circuits / H. R. Huff
Diffused Silicon Transistors and Switches (1954-1955): The Beginning of Integrated Circuit Technology / N. Holonyak Jr.
Current Status and Future Prospects in Mixed Signal SOC / A. Matsuzawa
Process Integration for Memory Devices
DRAM Technology for 100nm and Beyond / K.H. Kusters ; J. Alsmeier ; J. Faul ; J. Lutzen ; T. Zell
Logic Based Embedded DRAM Technologies / C. Mallardeau
Flash Memory Technology Evolution / R. Bez ; E. Camerlenghi
FeRAM Technology: Today and Future / I. Kunishima ; N. Nagel
Effects of Nitridation Treatment for Electrochemical Properties of MONOS Non-Volatile Memories / H. Aozasa ; I. Fujiwara ; K. Nomoto ; H. Komatsu ; T. Kobayashi
The Crystallization Behavior and Interfacial Reaction of Ge[subscript 2]Sb[subscript 2]Te[subscript 5] Thin Films Between Dielectric Material for the Application to the Phase Change Memory / E.J. Jung ; S.K. Kang ; B.G. Min ; D.H. Ko
Full Process Integration Aspects
Single-Wafer Technology in a 300-mm Wafer Fab / S. Ikeda ; K. Nemoto ; M. Funabashi
The Impact of Single Wafer Processing on Process Integration / R. Singh ; M. Fakhruddin ; K.F. Poole
Advanced Multilevel Interconnects Technologies for 40-nm Lg Devices / T. Ohba
Performance Limitations of Metal Interconnects and Possible Alternatives / K.C. Saraswat ; P. Kapur ; S. Souri
Plasma Technologies for Low-k Dry Etching / T. Tatsumi
A Novel Approach to Contact Integration at 90-nm and Beyond / A. Singhal ; T. Sparks ; K. Strozewski ; F. Huang ; S. Parihar ; J. Schmidt ; B. Boeck ; J. Fretwell ; G. Yeap ; V. Sheth ; S. Veeraghavan ; B. Melnick
SiGe Process Integration
BiCMOS Integration of High-Speed SiGe:C HBTs / H. Rucker ; B. Heinemann ; R. Barth ; D. Knoll ; D. Schmidt ; W. Winkler
Applications of Silicon Germanium Electrodes in ULSI / E.-X. Ping ; E. Blomiley ; F. Gonzalez
Noise Properties and Hetero-Interface Traps in SiGe-Channel PMOSFETs / T. Tsuchiya ; J. Murota
Ultra-Shallow Junction Formation by Low Energy Ion Implantation and Flash Lamp Annealing / K. Suguro ; T. Ito ; T. Itani ; T. Iinuma
Integration Aspects for Emerging Technologies
Single and Few Electron Devices. Integration Trends / J. Gautier
Achieving Low Junction Capacitance on Bulk Si MOSFET Using SDOI Process / Z. Wang ; T. Abbott ; J. Trivedi ; C.-C. Cho ; M. Violette
Differential Silicide Thickness for ULSI Scaling / W.J. Taylor Jr. ; J. Smith ; J.-Y. Nguyen ; R. Rai ; O. Adetutu ; J. Geren ; J. Ybarra ; D. Petru
High-Voltage CMOS and Scaling Trends / H. Ballan
Emerging Device Solutions for the Post-Classical CMOS Era / K. De Meyer ; N. Collaert ; S. Kubicek ; A. Kottontharayil ; H. van Meer ; P. Verheyen
Modeling End-of-the-Roadmap Transistors / A. Asenov ; A.R. Brown ; J.R. Watling
Thin Film Transistors in ULSI--Status and Future / Y. Kuo
Extending Planar Single-Gate CMOS & Accelerating the Realization of Double-Gate/Multi-Gate CMOS Devices / J.O. Borland ; H. Iwai ; W. Maszara ; H. Wang
Surface Preparation and Gate Module
Cleaning for Sub 0.1 [mu]m Technology: A Particular Challenge / D.M. Knotter
Si Channel Surface Dependence of Electrical Characteristics in Ultra-Thin Gate Oxide CMOS / H.S. Momose
Integration Issues with High k Gate Stacks / C.M. Osburn ; S.K. Han ; I. Kim ; S.A. Campbell ; E. Garfunkel ; T. Gustafson ; J. Hauser ; T.-J. King ; Q. Liu ; P. Ranade ; A. Kingon ; D.-L. Kwong ; S.J. Lee ; C.H. Lee ; J. Lee ; K. Onishi ; C.S. Kang ; R. Choi ; H. Cho|cR. Nich ; G. Lucovsky ; J.G. Hong ; T.P. Ma ; W. Zhu ; Z. Luo ; J.P. Maria ; D. Wicaksana ; V. Misra ; J.J. Lee ; Y.S. Suh ; G. Parksons ; D. Niu ; S. Stemmer
Compatibility of Polysilicon with HfO[subscript 2]-based Gate Dielectrics for CMOS Applications / V. Kaushik ; S. De Gendt ; M. Caymax ; E. Young ; E. Rohr ; S. Van Elshocht ; A. Delabie ; M. Claes ; X. Shi ; J. Chen ; R. Carter ; T. Conard ; W. Vandervorst ; M. Schaekers ; M. Heyns
Analysis of CMOS Gate-To-Drain Leakage Current and Proposition of a New Cobalt Salicide Selective Etch Chemistry for High DRAM Yield / B. Froment ; C. Regnier ; M.-T. Basso
Electrical Characteristics and Thermal Stability of W[subscript 2]N/Ta[subscript 2]O[subscript 5]/Si MOS Capacitors in N[subscript 2]:H[subscript 2] or H[subscript 2] Ambients / P.C. Jiang ; J.S. Chen
Sub-Quarter Micron PMOSFET DC and AC NBTI Degradation / E. Li ; S. Prasad ; S. Park ; J. Walker
Process Integration in Integrated Circuit Applications
Physical Analysis and Modeling of Plasma Etching Mechanism for ULSI Application / M. Kanoh ; S. Onoue ; K. Nishitani ; T. Shinmura ; K. Iyanagi ; S. Kinoshita ; S. Takagi
Process Strategy for Built-in Reliability of Cu Damascene Interconnect System for 0.13um-Node and Beyond / H. Yamaguchi ; T. Oshima ; J. Noguchi ; K. Ishikawa ; H. Aoki ; T. Saito ; T. Furusawa ; K. Hinode
Impact of Wafer Backside Cu Contamination to 0.18 um Node Devices / S.Q. Gu ; L. Duong ; J. Elmer
Integrated Multiscale Process Simulation of Damescene Structures / M.O. Bloomfield ; Y.H. Im ; J. Seok ; C.P. Sukam ; J.A. Tichy ; T.S. Cale
An Analysis of the Effect of the Steps for Isolation Formation on STI Process Integration / A. Pavan ; D. Brazzelli ; M. Aiello ; C. Capolupo ; C. Clementi ; C. Cremonesi ; A. Ghetti
Defect Generation and Suppression in Device Processes Using a Shallow Trench Isolation Scheme / D. Peschiarolli ; M. Brambilla ; G.P. Carnevale ; A. Cascella ; F. Cazzaniga ; c. Clementi ; A. Gilardini ; M. Martinelli ; A. Maurelli ; I. Mica ; G. Pavia ; F. Piazza ; M.L. Polignano ; V. Soncini ; E. Bonera
Electrodeposition of Low-Dimensional Phases on Au Studied by EQCM and XRD / C. Shannon
Silicon-on-Insulator
60-nm Gate Length SOI CMOS Technology Optimized for "System-on-a-SOI-Chip" Solution / K. Imai ; S. Maruyama ; T. Suzuki ; T. Kudo ; S. Miyake ; M. Ikeda ; T. Abe ; S. Masuda ; A. Tanabe ; J.-W. Lee ; K. Shibahara ; S. Yokoyama ; H. Ooka
Emerging Silicon-On-Nothing (SON) Devices Technology / T. Skotnicki ; S. Monfray ; C. Frenouillet-Beranger
High Performance Strained-SOI CMOSFETs / S.-I. Takagi ; T. Mizuno ; T. Tezuka ; N. Sugiyama ; T. Numata ; K. Usuda ; Y. Moriyama ; S. Nakaharai ; J. Koga ; T. Maeda
Extremely Scaled Ultra-Thin Body and FinFET CMOS Devices / S. Balasubramanion ; L. Chang ; Y.-K. Choi ; D. Ha ; S. Xiong ; J. Bokor ; C. Hu
Fully Depleted SOI Process and Device Technology for Digital and RF Applications / F. Ichikawa ; Y. Nagatomo ; Y. Katakura ; S. Itoh ; H. Matsuhashi ; N. Hirashita ; S. Baba
Status and Future Development of PDSOI MOSFETs / S. Krishnan
Multi-fin Double Gate MOSFET Fabricated by Using (110)-Oriented SOI Wafers and Orientation dependent Etching / Y.X. Liu ; K. Ishii ; T. Tsutsumi ; M. Masahara ; H. Takashima ; E. Suzuki
Optimization of Ultra-Thin Body, Fully-Depleted-SOI Device, with Raised Source/Drain or Raised Extension / J.L. Egley ; A. Vandooren ; B. Winstead ; E. Verret ; B. White ; B.-Y. Nguyen
Partially Depleted SOI Dynamic Threshold MOSFET for Low-Voltage and Microwave Applications / M. Dehan ; D. Vanhoenacker-Janvier ; J.-P. Raskin
New Characterization Techniques for SOI and Related Devices / S. Okhonin ; M. Nagoga ; P. Fazan
Authors Index
Subject Index
Preface
Electronics Division Award Address
Radical Reaction Based Semiconductor Manufacturing for Very Advanced ULSI Process Integration / T. Ohmi
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