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1.

図書

図書
editors, K.B. Sundaram ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  x, 286 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-7
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目次情報: 続きを見る
Preface
Organizers
Oxide Wear-Out, Reliability, Stress and Interfaces / I:
A Review of Oxide Wearout, Breakdown, and Reliability / D. Dumin
Surface And Interface Study Of Ion Beam Deposited Silicon oxide Thin films / Heinz D. Wazenboeck ; Emmerich Bertagnolli ; Bernhard Basnar ; Juergen Smoliner ; Martin Gritsch ; Herbert Hutter ; Josef Brenner ; C. Tomastik ; Herbert Storri
Study of Inversion Layer Hole Mobility In p-Mosfet During High-field Stressing / R. Jarawal ; D. Misra
Two Limiting Thinnesses Of The Ultrathin Gate Oxide / Samares Kar
SiO[subscript 2] Stress and Interfaces / II:
The Connection Between oxide leakage currents and Si/SiO[subscript 2] Interface Trap Generation / P. M. Lenahan
Charging Damage During Plasma Enhanced Dielectric Deposition / K. Cheung
Kinetics and Mechanisms of Organic Contaminant Interactions at Silicon Surfaces in High Temperature Processes / N. Rana ; P. Raghu ; F. Shadman
SiO[subscript 2] Films and Properties / III:
Remote Plasma Deposited Gate Dielectrics on Si and SiGe Mosfets / T. Ngai ; R. Sharma ; J. Fretwell ; X. Chen ; J. Chen ; W. Brookover ; S. Banerjee
Rapid Thermal Processes of High Permittivity Films on Silicon for ULSI Gate Dielectrics Applications / S. P. Tay ; R. Sharangpani ; Y. Z. Hu
Processing of Thick Thermal Gate Oxides in Trenchs / C. T. Wu ; R. Ridley ; G. Dolny ; T. Grebs ; J. Hao ; S. Suliman ; B. Venkataraman ; O. Awadelkarim ; R. Williams ; P. Roman ; J. Ruzyllo
Electrical Properties of SiO[subscript 2]-Films Prepared by VUV Chemical Vapor Deposition / Y. Motoyama ; J. Miyano ; K. Tosikawa ; Y. Yagi ; K. Kurosawa ; A. Yokotani ; W. Sasaki
SiO[subscript 2] Film Deposition on Different Substrate Materials by Photo- CVD Using Vacuum Ultraviolet Radiation / K. Toshikawa
Silicon Nitrides/ Oxynitrides / IV:
Low Energy Ion Irradiation of Silicon: Compound Formation and Segregation of Impurities / M. Petravic ; J. S. Williams ; P. N. K. Deenapanray
Characteristics of Silicon Oxynitrides Made By ECR Plasmas / J. A. Diniz ; P. J. Tatsch ; J. Swart
Radiation Hardening of Oxynitrides Formed By Low Nitrogen Implantation into Silicon Prior to Oxidation / J. Godoy Fo
Silicon Nitrides/ Oxynitrides II / V:
Material and Process Considerations of Ultra thin Silicon (Oxy) Nitride Films Grown on Silicon and SiO[subscript 2] Surfaces / C. P. D'Emic ; E. P. Gusev ; K. K. Chan ; T. Zabel ; M. Copel ; R. Murphy ; P. Kozolowski ; J. Newbury
Silicon OxyNitride: A Versatile Material for Integrated Optics Application / K. Worhoff ; A. Driessen ; P. V. Lambeck
Characterization of Silicon Oxynitride Thin Films Deposited By ECR-PECVD / C. Simionescu ; J. Wojcik ; H. K. Haugen ; J. A. Davies ; P. Mascher
Silicon Nitrides/ Oxynitrides III / VI:
Characterization of Low- Temperature Magnetoplasma- Grown Si Oxynitride and Si Oxide / H. Ikoma
Advances in Single Wafer Chemical Deposition of Oxide and Nitride films / W. Palmer ; Z. Gabric
High Integrity Direct Oxidation/Nitridation at Low Temperatures Using Radicals / T. Ohmi ; S. Sugawa ; M. Hirayama
Silicon Nitride
Thermally Induced Stress Changes in High Density Plasma Deposited Silicon Nitride Films / R. E. Shah ; H. Baumann ; D. Serries ; M. Mikulla ; R. Keiffer
Effect of Oxygen in Deposited Ultra Thin Silicon Nitride Film on Electrical Properties / K. Muraoka ; K. Kurihara
Influence of Low- energy argon Ion Bombardment and Vacuum Annealing on the Silicon Nitride Surface Properties / I. P. Petrenko ; V. A. Gritsenko ; L. M. Logvinsky ; H. Wong
Authors Index
Subject Index
Preface
Organizers
Oxide Wear-Out, Reliability, Stress and Interfaces / I:
2.

図書

図書
edited by Vikram J. Kapoor, Herman J. Stein ; [sponsored by] Dielectrics and Insulation and Electronics Divisions
出版情報: Pennington, N.J. : Electrochemical Society, c1983  ix, 519 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 83-8
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3.

図書

図書
editors, K. B. Sundaram ... [et al.] ; Dielectric Science and Technology and Electronics Divisions, and High Temperature Materials Divisions [of the Electrochemical Society]
出版情報: Pennington, New Jersey : Electrochemical Society, c1999  xi, 284 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-6
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4.

図書

図書
editors M. Jamal Deen ... [et al.] ; Dielectric Science and Technology and Electronics Divisions [of the Electrochemical Society]
出版情報: Pennington, New Jersey : Electrochemical Society, c1997  xiii, 588 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-10
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5.

図書

図書
edited by Vik J. Kapoor, Kevin T. Hankins ; [sponsored by the] Dielectrics and Insulation and Electronics Divisions
出版情報: Pennington, NJ (10 S. Main St., Pennington 08534-2696 : Electrochemical Society), c1987  x, 550 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 87-10
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6.

図書

図書
editors, V.J. Kapoor, W.D. Brown ; Dielectric Science and Technology and Electronics Divisions
出版情報: Pennington, NJ : Electrochemical Society, c1994  xiii, 625 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 94-16
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7.

図書

図書
edited by Steven B. Bibyk ... [et al.] ; Dielectrics and Insulation, and Electronics, and High Temperature Materials Divisions
出版情報: Pennington, NJ : Electrochemical Society, c1989  vii, 455 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 89-7
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