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1.

図書

図書
editors, P. C. Andricacos ...[et al.] ; sponsoring divisions, Electrodeposition, Dielectric Science and Technology, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2002  viii, 258 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-8
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2.

図書

図書
editors, M. Cahay ...[et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  ix, 398 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-19
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3.

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editors, P.C. Chang, S.N.G. Chu, D.N. Buckley
出版情報: Pennington, N.J. : Electrochemical Society, c2001  viii, 164 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-20
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4.

図書

図書
editor, G.S. Mathad ; assistant editors, M. Engelhardt ...[et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  viii, 216 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-24
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5.

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図書
editors, J. Ruzyllo ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2002  x, 374 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-26
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6.

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editors, B.O. Kolbesen ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  x, 362 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-29
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7.

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editos, J.D. Sinclair ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  xviii, 1162 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-22
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8.

図書

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editors, R.K. Kopf ... [et al.] ; sponsoring divisions, Electronics, Sensor
出版情報: Pennington, N.J. : Electrochemical Society, c2002  ix, 362 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-3
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9.

図書

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editors, M.J. Deen, D. Misra, J. Ruzyllo ; sponsoring divisions, Electronics, Dielectric Science and Technology
出版情報: Pennington, N.J. : Electrochemical Society, c2002  viii, 436 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-28
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10.

図書

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editors R.F. Kopf, A.G. Baca, S.N.G. Chu ; [sponsored by] Electronics Division [of the Electrocehmical Society]
出版情報: Pennington, N.J. : Electrochemical Society, c2000  ix, 354 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-1
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11.

図書

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editors, Mark D. Allendorf, Michael L. Hitchman
出版情報: Pennington, N.J. : Electrochemical Society, c2000  xi, 810 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-13
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目次情報: 続きを見る
Fundamental Chemistry and Mechanisms
Atomistic Modeling of Chemical Vapor Deposition: NO on the Si (001) (2x1) Reconstructed Surface / N. Tanpipat ; J. Andzelm ; B. Delley ; A. Korkin ; A. Demkov
Simulation of Surface Diffusion of Silicon and Hydrogen on Single Crystal Silicon Surfaces / S. Somasi ; B. Khomami ; R. Lovett
Activation Energy Study for the Nucleation and Growth Stages of Cu(TMVS)(HFAC) Sourced Copper CVD / D. Yang ; J. Hong ; D. Richards ; T. Cale
Development of Gas Phase and Surface Kinetic Schemes for the MOCVD of CdTe, ZnS and ZnSe / C. Cavallotti ; V. Bertani ; M. Masi ; S. Carra
Determination of Energy Transfer Effects for Molecular Decomposition / W. Tsang ; V. Mokrushin
Gas-Phase Chemistry in the CVD of Silicon Carbide: Theoretical Study of the Reactions SiH[subscript 2]+CH[subscript 4], SiH[subscript 2]+C[subscript 2]H[subscript 4], and SiH[subscript 2]+C[subscript 2]H[subscript 2] / C. Raffy ; M.D. Allendorf ; E. Blanquet ; C.F. Melius
SiH[subscript 4] Reaction Mechanism Research Using a Fast Wafer-Rotating Reactor / Y. Sato ; N. T. Tamaoki ; T. Ohmine
Modeling Particle Nucleation during Thermal CVD of Silicon from Silane using Kinetic Monte Carlo Simulation / X. Li ; M. Swihart
Measurement of the Kinetics of the High Temperature Oxidation of TiCl[subscript 4] / R. Raghavan ; D. Lee ; D. Conrad ; P. Morrison, Jr.
Influence of Carbon Precursor on the Gas-Phase Chemistry of the Ti-C-Cl-H System / S. de Persis ; F. Teyssandier ; A. McDaniel
Molecular Beam Mass Spectrometry Studies of the Thermal Decomposition of Tetrakis(Dimethylamino)Titanium / C.C. Amato-Wierda ; E.T. Norton, Jr.
Kinetic and Mechanistic Studies of the Chemical Vapor Deposition of Ti-Si-N Thin Films with Ti(NMe[subscript 2])[subscript 4](TDMAT), NH[subscript 3], and Si H[subscript 4] / E.T. Norton ; C. Amato-Wierda
Evaluation of Gas Phase Reaction Rate Constant by Deposition Profile Analysis for In Situ Counter Diffusion CVD / Y. Egashira ; H. Tanaka ; T. Mina ; N. Mori ; K. Ueyama
Integration of a Quadrupole Mass Spectrometer and a Quartz Crystal Microbalance for In Situ Characterization of Atomic Layer Deposition Processes in Flow Type Reactors / A. Rahtu ; M. Ritala
Nanostructures and Quantum Dots
Nanostructures by CVD Assisted Methods Using Inorganic Precursors / P. Doppelt ; R. Even ; F. Marchi ; V. Bouchiat ; H. Dallaporta ; S. Safarov ; D. Tonneau ; P. Hoffmann ; F. Cicoira ; I. Utke ; B. Dwir ; K. Leifer ; E. Kapon
Effect of Carbon Predeposition Nucleation of Quantum Dots / Q. Zhao ; D. Greve
Plasma-Enhanced MOCVD of Smooth Nanometersized Metal/Silicon Single- and Multilayerfilms / F. Hamelmann ; G. Haindl ; A. Aschentrup ; A. Klipp ; U. Kleineberg ; P. Jutzi ; U. Heinzmann
Modeling, Reactor Design, and Process Control
Multicomponent Transport and Mixed Convection Flows in CVD Reactors / A. Ern
A Benchmark Solution for Multi-Dimensional Thermal CVD Modeling with Detailed Chemistry / C.R. Kleijn
On the Occurrence of Non-Symmetric Flows in Axisymmetric CVD Reactors / H. van Santen ; H.E.A. van den Akker
The Dynamics of Thin Film Growth: A Modeling Study / M. Gallivan ; R. Murray ; D. Goodwin
Improvement of Temperature Uniformity in Rapid Thermal CVD Systems Using Multivariable Control / F. van Bilsen ; R. De Keyser
Systematic Approach to Controlling Abnormal Structures Growth in CVD - Simulation of Nodule Structure Evolution
A Two-Dimensional Simulation Model for Oxy-Acetylene Flame CVD of Diamond Films / M. Okkerse ; C. Kleijn ; H. van den Akker ; M.H.J.M. de Croon ; G.B. Marin
Silicon Films Morphology Design Through Multiscale CVD Modeling
Numerical Simulation of Silicon Carbide Deposition in a Cold Wall CVD Reactor / G. Chaix ; A. Dolle t ; M. Matecki ; Y. Wang
Effect of Gas Phase Nucleation on Silicon Carbide Chemical Vapor Deposition / A.N. Vorob'ev ; A.E. Komissarov ; M.V. Bogdanov ; S. Yu. Karpov ; A.A. Lovtsus ; Yu.N. Makarov ; S.A. Lowry
CVD of SiC from CH[subscript 3]SiCl[subscript 3] in a Hot-Wall-Reactor System: Transport Pheonomena and Kinetic Aspects / V.K. Wunder ; N. Popovska ; H. Gerhard ; G. Emig ; P. Kaufmann ; L. Kadinski ; F. Durst
Modeling and System Design for Atmospheric Pressure CVD of YSZ / T. Besmann ; V. Varanasi ; T. Starr ; T. Anderson
A Stagnation-Flow MOCVD Reactor for Intelligent Deposition of YBCO Thin Films / A. Tripathi ; D. Boyd ; H. Atwater ; L. R. Raja ; R. J. Kee ; J. Musolf
Metalorganic Chemical Vapor Deposition
New Liquid Precursors for CVD of Metal-Containing Materials / R. Gordon
Novel MOCVD Process for the Low Temperature Deposition of the Chromium Nitride Phases / F. Maury ; D. Duminica ; F. Senocq
MOCVD of WN[subscript x] Thin Films Using Novel Imido Precursors / S. Johnston ; C. Ortiz ; O. Bchir ; Y. Zhang
Vapor Phase Epitaxy of Magnesium Oxide on Silicon Using Methylmagnesium Alkoxides / S.S. Lee ; S.Y. Lee ; C. Kim ; Y. Kim
Use of Ti(dpm)[subscript 2](Opr[superscript i])[subscript 2] Precursor to Obtain TiO[subscript 2] Film / V. Krisyuk ; A.E. Turgambaeva ; I.K. Igumenov ; V.G. Bessergenev ; I.V. Khmelinskii ; R.J.F. Pereira
Monitoring of MOCVD Fabrication of LaF[subscript 3] Films Using the Novel La(hfac)[subscript 3] - Diglyme Adducts and In Situ Synthesized La(hfac)[subscript 3] Anhydrous Precursor / G.G. Condorelli ; I.L. Fragala
Ceramics, Composites, and Hard Materials
Chemical Vapor Deposition of Aluminum on Silicon Carbide for the Investigation of the Interfacial Microstructure in Discontinuously Reinforced Aluminum / P. Oritz ; D. Oquab ; C. Vahlas ; I. Hall
Development of CVD Mullite Coatings / S.N. Basu ; V.K. Sarin
Evaluation of Various Hypotheses on the Influence of Nitrogen on Diamond Growth in an Oxy-Acetylene Torch Reactor
MOCVD of Aluminosilicate Corrosion Protection Coatings / S.M. Zemskova ; J.A. Haynes ; T.M. Besmann
Chemical Vapor Deposition of MoS[subscript 2] on and in TiN Coatings / H. Keune ; G. Wahl ; W. Lacom
Measurement of the Retarding Effect of HCl on the Rate of CVD of Titaniumdiboride / Ch.-Ho Yu ; E. Zimmermann ; D. Neuschutz
Factors Affecting the Amount of Carbon in Titanium Carbide Films Made by CVD / C. C. Amato-Wierda ; K. E. Versprille ; P. Ramsey
Characterization of Ti-W-C Thin Films Deposited by CVD / C.C Amato-Wierda ; H. X. Ji
MOCVD of Chromium Carbide from Bis-Ethyl-Benzene-Chromium / M. Satschko
Effect of H[subscript 2]S on the Microstructure and Deposition Characteristics of Chemically Vapor Deposited Al[subscript 2]O[subscript 3] / S. Ruppi ; A. Larsson
Cosmo-Mimetic Carbon Micro-Coils / D. Motojima ; X. Chen ; W. In-Hwang ; T. Kuzuya ; M. Kohda ; Y. Hishikawa
Morphology of Carbon Micro-coils Grown by Catalytic Decomposition of Hydrocarbons / W.-In Hwang ; S. Motojima
Silicon and Silicon Germanium Materials
Chemical Vapor Deposition of Low Trap Density SiGe Quantum Well Layers on Silicon / S. Kar ; P. Zaumseil
Loading Effects during Non-Selective Epitaxial Growth of Si and SiGe / J. Pejnefors ; S.-L. Zhang ; J.V. Grahn ; M. Ostling
Thermodynamic Analysis of Selective Epitaxial Growth of Silicon / W.-S. Cheong ; J.H. Joung ; J.W. Park ; D.J. Ahn
Nanocrystals Formation and Microstructure Evolution of Amorphous Si and Si[subscript 0].7Ge[subscript 0.3] by Using Low Pressure Chemical Vapor Deposition / T.-S. Yoon ; D.-H. Lee ; J.-Y Koon ; K.B. Kim
The Profile Control of n-type Doping in Low and High Temperature Si Epitaxy for High Frequency Bipolar Transistors / H.H. Radamson ; B. Mohadjeri ; B.G. Malm ; G. Landgren
CVD-Epitaxial Growth on Porous Si for ELTRAN SOI-Epi Wafers / N. Sato ; S. Ishii ; T. Yonehara
Dislocation Generation in Selective and Non Selective SiGe Epitaxy / C. Fellous ; F. Romagna ; D. Dutartre
MOSFET Evaluation of Ultraclean-CVD Si and SiGe Grown at 550[degree]C on SIMOX / K. Fujinaga
Global Model of Silicon Chemical Vapor Deposition in Centura Reactors / A.S. Segal ; A.V. Kondratyev ; A.O. Galyukov ; S.Yu. Karpov ; W. Siebert ; P. Storck ; S. Lowry
A Comparison of Commonalities and Differences of Silicon-Based Thin Films CVD Processes for ULSI Device Technologies / V. Vassiliev
Metals, Metallization, and Diffusion Barriers
Selective Nucleation and Area Selective OMCVD of Gold on Patterned Self-Assembled Organic Monolayers: A Comparison of OMCVD and PVD / R.A. Fischer ; C. Winter ; U. Weckenmann ; J. Klashammer ; V. Scheumann ; S. Mittler
Surface Analysis of Al Film Prepared from Dimethyl-Aluminum-Hydride / M. Sugiyama ; H. Ogawa ; H. Itoh ; J. Aoyama ; Y. Horiike ; H. Komiyama ; Y. Shimogaki
Chemical Vapor Deposition of Titanium Nitride and Titanium Silicon Nitride Thin Films from Tetrakis-(dimethylamido) Titanium and Hydrazine as a Co-Reactant / D.A. Wierda
Chemical Vapor Deposition of Copper Using hfacCu[superscript (1)]DMB(3,3-dimethyl-1-butene) Liquid Precursor / K.- K. Choi ; S.-W. Rhee
Reaction of Bis-(2,4-Pentanedionato) M(II) (M= Ni, Cu) Under Low Pressure CVD Conditions / C.R. Vestal ; H.M. Sturgill ; T.C. DeVore
Metalorganic Chemical Vapor Deposition of Nickel Films: Investigation of a New Precursor, [Ni(tmen)([mu]-tfa) subscript 2]([mu]H[subscript 2]O) / J.-K. Kuang ; A. Gleizes
Platinum Thin Films Obtained via MOCVD on Quartz and CaF[subscript 2] Windows as Electrode Surfaces for In Situ Spectroelectrochemistry / S. Santi ; G. Carta ; S. Garon ; L. Rizzo ; G. Rossetto ; P. Zanella ; D. Barreca ; E. Tondello
Surface Adsorption of WF[subscript 6] on Si and SiO[subscript 2] in Selective W-CVD / Y. Yamamoto ; T. Matsuura ; J. Murota
CVD Tungsten Via Void Minimization for Sub 0.25 [mu]m Technology / A.M. Haider ; D.J. Rose ; J.R.D. Debord ; S.P. Zuhoski
Three-Dimensional Computer Simulation of WSi[subscript x] CVD VLSI Processing-Effect of Outlet Position / K. Sugawara ; M. Kunishige ; T. Muranushi ; Y.K. Chae
Processing of Tungsten Single Crystals by Chemical Vapor Deposition / R. Zee ; Z. Xiao ; H.S. Gale ; B.A. Chin ; L.L. Begg
Simplified CMP Planarization Process Module for Shallow Trench Isolation Applications / K. Kapkin ; M. Mogaard ; T. Curtis ; J. deRuiter
Dielectric Materials
Reactor Scale Simulation of Metal Oxide Deposition from an Inorganic Precursor / J.V. Cole ; A. Nangia ; T. Mihopoulas ; R. Hegde
Atomic Layer Deposition of High-k Oxides / K. Kukli ; M. Vehkamaki ; T. Hanninen ; T. Hatanpaa ; P.I. Raisanen ; M. Leskela
Quality Improvement of SiO[subscript 2]-Films by Adding Foreign Gases in Photo-Chemical Vapor Deposition / Y. Motoyama ; J.-i. Miyano ; T. Yokoyama ; K. Toshikawa ; T. Mori ; H. Mutou ; K. Kurosawa ; A. Yokotani ; W. Sasaki
SiO[subscript 2] Deposition Mechanism in Photo-Chemical Vapor Deposition Using Vacuum Ultraviolet Excimer Lamp / J. Miyano
Kinetic Growth of Al[subscript 2]O[subscript 3] Thin Films Using Aluminium Dimethylisopropoxide as Precursor / G. A. Battison ; R. Gerbasi
Atomic Layer Deposition of Metal Oxide Films by using Metal Alkoxides as an Oxygen Source
Optimization of LPCVD Nitride Deposition Conditions for Non-Volatile Memory Inter Poly Dielectric Applications / M.J. Teepen ; M.A.A.M. van Wijck ; H. Sprey
Ultra Thin TiO[subscript 2] Films Deposited by Atomic Layer Chemical Vapor Deposition / M. Schuisky ; A. Aidla ; J. Aarik ; M. Ludvigsson ; A. Harsta
Characterization of Ta[subscript 2]O[subscript 5] Films Prepared by ALCVD / K. Forsgren ; J. Sundqvist
In-Situ Preparation of Ti-Containing Ta[subscript 2]O[subscript 5] Films by Halide CVD
CVD of Zr-Sn-Ti-O for Capacitor Applications / Y. Senzaki ; G. Alers ; A. Hochberg ; D. Roberts ; J. Norman ; R. Fleming ; H. Krautter
Gallium Nitride and Other III-V Materials
Investigations of Chemical Vapor Deposition of GaN Using Synchrotron Radiation / C. Thompson ; G.B. Stephenson ; J.A. Eastman ; A. Munkholm ; O. Auciello ; M.V. Ramana Murty ; P. Fini ; S.P. DenBaars ; J.S. Speck
Reaction-Transport Models of the Metalorganic Vapor Phase Epitaxy of Gallium Nitride / R.P. Pawlowski ; C. Theodoropoulos ; A.G. Salinger ; H.K. Moffat ; T.J. Mountziaris ; J.N. Shadid ; E.J. Thrush
Growth of Hexagonal GaN Films by MOCVD Using Novel Single Precursors / C.G. Kim ; S.H. Yoo ; J.H. Lee ; Y.K. Lee ; M.M. Sung
In Situ Measurement of the Decomposition on GaN OMVPE Precursors by Raman Spectroscopy / C. Park ; S. Lee ; J. Seo ; M. Huang ; T.J. Anderson
Growth Kinetics and Mechanistic Studies of GaN Thin Films Grown by OMVPE Using (N[subscript 3])[subscript 2]Ga[(CH[subscript 2])[subscript 3]NMe subscript 2] as Single Source Precursor / A. Wohlfart ; A. Devi ; W. Rogge ; J. Schafer ; J. Wolfrum
Experimental and Numerical Study of InGaAsP Materials Growth Kinetics and Composition / O. Feron ; Y. Nakano
Ruthenium Doped Indium Phosphide Growth by Low Pressure Hydride Vapor Phase Epitaxy / D. Soderstrom ; S. Lourdudoss ; M. Wallnas ; A. Dadgar ; O. Stenzel ; D. Bimberg ; H. Schumann
Quasi-Thermodynamic Models of Surface Chemistry: Application to MOVPE of III-V Ternary Compounds / E.V. Yakovlev ; R.A. Talalaev ; Yu.A. Shopolyanskiy ; Y.N. Makarov
Electronic, Optical, and Magnetic Materials
Chemical Vapor Deposition and Magnetoresistance of Granular Cu-Co Films / I.S. Chuprakov ; K.-H. Dahmen
Diagnostics of Metalorganic Chemical Vapor Deposition of (Ba, Sr)TiO[subscript 3] Films by Microdischarge Optical Emission Spectroscopy / S. Momose ; T. Nakamura ; K. Tachibana
Bismuth Titanate Thin Films Deposited by Halide Chemical Vapor Deposition / S. Khartsev ; A. Grishin
LPCVD of Optical Interference Coatings for Micro-Optical Applications / M. George ; D.Z. Rogers
Evaluation of Precursors for the Chemical Vapour Deposition of Tin Oxide / A.M.B. van Mol ; G.R. Alcott ; C.I.M.A. Spee ; J.C. Schouten
Characteristics of Silicon Oxy-Nitride Thin Films Deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition / C. Simionescu ; F. Bounasri ; S.G. Wallace ; H.K. Haugen ; J.A. Davies ; P. Mascher
CVD of Molecule-based Conductors and Magnets / L. Valade ; D. deCaro ; H. Casellas ; M. Basso-Bert ; C. Faulmann ; J.-P. Legros ; P. Cassoux ; L. Aries
Stability of RuO[subscript 2] Bottom Electrode and Its Effect on the Ba-Sr-Ti Oxide Film Quality / Y.-J. Oh ; S.H. Moon ; C.-H. Chung
Multilayers for the Growth of HTc Superconducting Tape: A Full MOCVD Approach / R. Lo Nigro ; G. Malandrino
Fundamental Chemistry and Mechanisms
Atomistic Modeling of Chemical Vapor Deposition: NO on the Si (001) (2x1) Reconstructed Surface / N. Tanpipat ; J. Andzelm ; B. Delley ; A. Korkin ; A. Demkov
Simulation of Surface Diffusion of Silicon and Hydrogen on Single Crystal Silicon Surfaces / S. Somasi ; B. Khomami ; R. Lovett
12.

図書

図書
editors, Hisham Z. Massoud ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2000  xiv, 539 p. ; 27 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-2
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13.

図書

図書
editor, L. Mendicino ; [jointly sponsored by the Dielectric Science and Technology Division]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  vii, 212 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-6
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14.

図書

図書
editors, Sorin Cristoloveanu ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  x, 464 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-3
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図書

図書
editors, F. Ren ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  ix, 318 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-1
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図書

図書
editor, Y. Kuo ; [sponsored by] Electronics and Dielectric Science and Technology Divisions [of the Electrochemical Society]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  xi, 340 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; 2000-31
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目次情報: 続きを見る
Preface
Reviews of TFT Research Activities
Advances in Printed Liquid Crystal Displays with Plastic Substrates / E. Lueder
A Brief Review of Thin-Film Transistor Research Done in Tokyo Institute of Technology / M. Matsumura
Amorphous and Microcrystalline Silicon TFTs
ECR-PECVD of Silicon Nitride and Hydrogenated Amorphous Silicon at 80[degree]C For TFTs / A. J. Flewitt ; A. P. Dyson ; J. Robertson ; W. I. Milne
Amorphous Silicon Thin Film Transistor Fabricated with a New Copper Dry Etching Method / S. Lee ; Y. Kuo ; J. P. Donnely ; J.-Y. Tewg ; H. Lee
Microcrystalline Silicon TFTs For AMLCDs / I. D. French ; P. Roca i Cabarrocas ; S. C. Deane ; R. B. Wehrspohn ; M. J. Powell
Use of 120[degree]C n[superscript +] [mu]c-Si:H in Low Temperature TFT Fabrication / T. Charania ; A. Sazonov ; A. Nathan
Process Considerations for Small Area a-Si:H Vertical Thin Film Transistors / I. Chan ; B. Park
Polycrystalline Silicon TFTs
Future Trends in Low Temperature Poly-Si TFT-LCD by Excimer Laser Anneal / S. Uchikoga
Low Temperature Process Technologies and "Process Integration" for High Performance Polycrystalline Silicon Thin-Film Transistors / S. Higashi
Top-Gate Amorphous Si Air-Gap Transistors with Poly-Si Contacts / P. Mei ; J. Ho ; R. Lau ; J. P. Lu ; B. Street ; J. Boyce
Full Optimized Process of Polysilicon TFT's Using Very Large Excimer Laser / Y. Helen ; G. Gautier ; K. Mourgues ; T. Mohammed-Brahim ; F. Raoult ; O. Bonnaud ; C. Prat ; D. Zahorski ; D. Lemoine
Polycrystalline Silicon Thin Film Transistors Free from Large Angle Grain Boundaries / M. Maekawa ; Y. Nakamura ; Y. Umenaka ; J. Takagi ; M. Hijikigawa
Low Temperature Poly-Si TFT-LCDs Using P-type Technology / K.-J. Kim ; Y.-M. Ha ; J.-C. Yeo ; B.-K. Kim ; H.-S. Choi ; D.-G. Kim
High Performance Low Temperature Polysilicon TFT'S with Ultra-thin Liquidphase Deposited Gate Oxide and N[subscript 2]O Plasma Treatment / C.-F. Yeh ; S.-C. Wang ; J.-N. Jeng ; C.-Y. Lu
Crystallization, Etching, Deposition, Hydrogenation, and Metallization
Silicide Mediated Crystallization of Patterned Amorphous Silicon in the Electric Field / S. J. Park ; K. H. Kim ; B. R. Cho ; A. Y. Kim ; S. Y. Yoon ; J. Jang
Two-Dimensionally Position-Controlled Ultra-Large Grain Growth Based on Phase-Modulated Excimer-Laser Annealing Method / M. Nakata
The Lateral Grain Growth of ELA Poly-Si by Employing Selective Melting and Lateral Heat Sink / J.-H. Jeon ; M.-C. Lee ; J.-W. Park ; M.-K. Han
Novel Wet Taper Etching of Interconnects on Large Area Substrates Using Galvanic Reaction / T. Kaneko ; Y. Hashimoto ; K. Ono ; K. Fujii ; K. Onisawa
High Quality Silicon Oxide Deposited with A Multipolar Electron Cyclotron Resonance Plasma Source / G. Isai ; A. Kovalgin ; J. Holleman ; P. Woerlee ; H. Wallinga
Effects of NH[subscript 3]/N[subscript 2] Plasma Treatment on Very-Low-Temperature (100[degree]C) Oxides / C.-H. Kim ; S.-H. Jung ; W.-J. Nam
Electroless Deposition of Ni-P Alloy in Electronics / T.N. Khoperia
Devices and Modeling
Mechanisms Underlying the Off Characteristics of a-Si:H Thin Film Transistors / P. Servati
Analysis of the Leakage Current of Poly-Si TFT Using Counter-Doping Process / J. Y. Yang ; S. H. Yu ; J. H. Kim
Low Temperature Poly-Si TFT with Lateral Body Terminal for Stability Improvement / J. S. Yoo ; M. C. Lee ; I. H. Song ; M. K. Han
Low Frequency Noise in CdSe Thin-Film Transistors / M. J. Deen ; S. L. Rumyantsev ; I. Glick ; A. Smozh ; M. Westcott ; D. Waechter
Materials
Defect Reduction Technologies Used to Improve Characteristics of Polycrystalline Silicon Thin Film Transistors / Y. Tsunoda ; T. Sameshima
Polysilicon Thin Film Transistors on Glass-Ceramic Substrates / S. M. Krasulya ; N. I. Nemchuk ; D. G. Ast ; J. G. Couillard
Structural Differences between Deuterated and Hydrogenated Hydrogenated Silicon Nitride/Oxynitride / A. Shih ; S.-C. Lee ; T. R. Yang ; C. C. Lu
Highly Packed and Ultra-Large Si Grains Grown by a Single-Shot Irradiation of Excimer-Laser Light Pulse / Y. Sano ; W-C. Yeh
Low-Pressure CVD of Germanium-Silicon Films Using Silane and Germane Sources / C. Salm
Unhydrogenated Polycrystalline Silicon-Germanium Thin Film Transistors by LPCVD / D. Guillet ; R. Rogel ; M. Sarret
New and Novel Applications
Flat Panel X-Ray Image Detectors for Medical Imaging Applications / Y. Izumi ; Y. Yamane ; F. Funada ; S. Adachi ; S. Yamada
Analog Addressed Microdisplays / A. Van Calster
Polysilicon Thin Film Transistor Development for Smart Power Applications / Y. Wu ; F. Robb ; J. Shen ; S. Robb ; K. Kamekona
Polysilicon Thin Film Transistor and EEPROM Characteristics for Three Dimensional Memory / J. R. Lindsey ; T. S. Kalkur
Active Pixel TFT Array for Digital Imaging Applications / K.S. Karim
Author Index
Subject Index
Preface
Reviews of TFT Research Activities
Advances in Printed Liquid Crystal Displays with Plastic Substrates / E. Lueder
17.

図書

図書
editors, M. Cahay ... [et. al] ; [sponsored by] Dielectric Science and Technology, Electronics, and Luminescence and Display Materials Divisions [of the Electrochemical Society]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  viii, 280 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-28
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Preface
Field Emitter Arrays
Tip Self-Heating to Enhance Microfabricated Cold Cathode Operation Lifetime / P.R. Schwoebel ; C.A. Spindt ; C.E. Holland ; J.A. Panitz
Laser Assisted Fabrication of Single Crystalline Tungsten Rods for use as Field Emitting Cathodes / K. Larsson Bjorklund ; C. Ribbing ; H. Norde ; M. Boman
Theory of H Induced Enhancement of Field Emission from and O Covered Mo(110) Surface / P. von Allmen ; R. Ramprasad ; L.R.C. Fonseca ; P. Ordejon
Process Simulation of a Silicon Field Electron Emitter with Integrated Double-gated Beam Focusing Lens / G. Oleszek ; M. Rodriquez
Carbon Nanotubes
Carbon Nanotube Cold Cathodes Fabrication and Properties / C. Bower ; W. Zhu
Calculating the Field Emission Current from a Carbon Nanotube
Scanning Anode Field Emission Microscopy on Carbon Nanotube Thin Film Emitters / L.O. Nilsson ; O. Groenig ; P. Groenig ; L. Schlapbach
Template Based Carbon Nanotubes as A Field Emitter / S.-H. Jeong ; H.-Y. Hwang ; K.-H. Lee ; W.-K. Cho ; K.-Y. Kim ; H.-S. Jeong
Field Emission Cathode from Aligned Arrays of Carbon Nanotubes / A. Govyadinov ; P. Mardilovich ; D. Routkevich
Electron Emission Cooling
Cooling by Field Emission into the Vacuum with Resonant Tunneling: Design Parameters / R. Tsu
New Results on Microelectronic Cooling Using the Inverse Nottingham Effect: Low Temperature Operation and Efficiency / P.H Cutler ; N.M. Miskovsky ; N. Kumar ; M.S. Chung
Theory and Simulation
The Semiconductor Statistical Hyperbolic-Ellipsoidal Model For Evaluation of Current From Microstructures / K.L. Jensen
Non Equilibrium Field Emission from Wide Bandgap Semiconductors / G.L. Bilbro
Onset of Current Self-Quenching in an InP/CdS/LaS Cold Cathode / Y. Modukuru ; M. Cahay ; P.D. Mumford
Negative Electron Affinity/ Low Electron Affinity
Novel Electron Sources / V.T. Binh ; V. Semet ; J.P. Dupin
Effect of Surface Properties on Electron Energy Distribution from C(111) and C(100) Surfaces / J. Yater ; A. Shih
Synthesis and Work Function Measurement of LaS and NdS Bulk Samples / J. Thachery ; H. Tang ; P. Boolchand
Carbons, Diamond, and a-Silicon
Electron Emission from Carbon Films / R.J. Nemanich ; F.A.M. Kock ; J.M. Garguilo
Fabrication and Characterization of Cathodoluminescent Devices made Using Porous Silicon as a Cold-Cathode Field Emitter / D. Heyde Elqaq ; M.-A. Hasan
Monolithic Thin Film Edge Emission Diodes / H.R. Kim ; L. Karpov ; V. Bhatia ; M. Weichold
Electron Emission Characteristics of Diamond / B. Pate
Conditioning of Amorphous Cathodes via Current Stressing / S.R.P. Silva ; J.D. Carey ; C.H. Poa ; J.M. Shannon
Field Emission Display Development at Motorola / A.A Talin ; B.F.Coll. Yi Wei ; K.A. Dean ; J.E. Jaskie
Rehybridization of Atomic Orbitals and Field Emission Properties of Nanostructured Graphite-like Materials / A.N. Obraztsov ; A.P. Volkov ; A.I. Boronin ; S.V. Kosheev
Author Index
Subject Index
Preface
Field Emitter Arrays
Tip Self-Heating to Enhance Microfabricated Cold Cathode Operation Lifetime / P.R. Schwoebel ; C.A. Spindt ; C.E. Holland ; J.A. Panitz
18.

図書

図書
editors, P.J. Hesketh ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 258 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-19
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Preface
Micromachining
The Microfactory System using Electrochemical Machining / Masayuki Suda ; Kazuyoshi Furuta ; Toshihiko Sakuhara ; Tatsuaki Ataka
Electroplated Nanocrystalline Nickel-Iron Alloys as a New Powerful Material for Microstructured Molding Tools / A. Fath ; W. Leskopf ; K. Bade ; W. Bacher
Lateral Etch Study of Thin Films Using Hydrofluroric Acid Chemistries for MEMS Devices / G. Matamis ; Chuan-Che Wang ; B. Gogoi
Low Surface Tension Etching Solutions for Silicon Dioxide Removal in Microelectromechanical Systems / M. J. Parent ; L. Zazzera ; P. Rajtar ; F. E. Behr
Hybrid Micromachining and Surface Microstructuring of Alumina Ceramic / P. Mardilovich ; D. Routkevitch ; A. Govyadinov
Microfluidics
Micro Scale Purification Systems for Biological Sample Preparation / A. B. Frazier
Challenges and Solutions for Packaging MEMS and Microsystems / J. Neysmith ; D. F. Baldwin
Fabrication and Characterization of Plastic Microfluidic Devices Modified with Polyelectrolyte Multilayers / L. E. Loscascio ; S. L. R. Barker ; D. Ross ; Jay Xu ; S. Roberson ; M. Tarlov ; M. Gaitan
Bulk-Etched Integrated Mesoscopic Fluidic Interconnects for Fluidic Microdevices / J. A. Scalf ; D. Liepmann ; A. P. Pisano
Electro-Magnetically Actuated Diverting Valve Using LTCC Tapes / J. R. Gillman ; P. Espinoza-Vallejos ; L. Sola-Laguna ; J. J. Santiago-Aviles
Design of a MEMS Magnetic Bi-Stable Valve / D. Creyts IV ; P. J. Hesketh ; G. C. Frye-Mason
Room Temperature, Adhesive Bonding for Wafer Scale Packaging of Fluidic Microsystems / X. Ma ; B. Gierhart ; S. D. Collins ; R. L. Smith
Physical Sensors
Inertial Sensors: The Drive for Aspect Ratio / P. L. Bergstrom
Residual Stress Effect and Improvement Method on the Performance of Diaphragm-Based Piezoelectric Microphones / Mengnian Niu ; Sok Kim
A Post-Processing Method for Suppressing the Residual Mechanical Stress in CMOS Layers, for MEMS Applications / B. Ghodsian ; V. Milanovic
Chemical Sensors
Chemical Microsensors for Aerospace Applications / G. W. Hunter ; P. G. Neudeck ; G. Fralick ; C. C. Liu ; Q. H. Wu ; M. S. Sawayda ; Z. Jin ; J. Hammond ; D. Makel ; W. A. Rauch ; M. Liu ; G. Hall
A MEMS Based Hybrid Preconcentrator/Chemiresistor Chemical Sensor / R. C. Hughes ; S. V. Patel ; R. P. Manginell
Micro-Hotplate, an Useful Concept for Gas Sensing, Fluidics and Space Applications / D. Briand ; O. Guenat ; B. van der Schoot ; T. Hirata ; N. F. de Rooij
Detection of Trace Silver and Copper at an Array of Boron-Doped Diamond Microdisk Electrodes / C. Madore ; A. Duret ; W. Haenni ; A. Perret
FET Based pH and Nitrate Checkers for Acid-Rain Monitoring / S. Wakida ; M. Yamane ; S. Takeda ; Z. Siroma ; Y. Tsujimura ; J. Liu
Biosensors
Microfabricated PMMA Structure for DNA Preconcentration and Electrophoresis / Yu-Cheng Lin ; Chien-Kai Tseng ; Shao-Qin Hou
Soluble Sensors of Telephonic Signals / M. Garnett ; J. L. Remo
Selective Deposition of Octasubstituted Phthalocyanine Materials Based on Hydrophobic / Hydrophilic Surface Interactions / R. A. P. Zangmeister ; N. R. Armstrong
Nanomechanical Detection of Biomolecular Interactions / K. M. Hansen ; Guanghua Wu ; Hai-Feng Ji ; T. Thundat ; R. Datar ; R. Cote ; A. Majumdar
Ultra-Sensative Resonant Frequency Based Mass Detector / B. Ilic ; D. Czaplewski ; H. G. Craighead ; P. Neuzi ; C. Campagnolo ; C. Batt
Microfabrication Processes
Developing a [mu]-Fabrication Course: A Study in Multidisciplinary MEMS Curriculum Development / R. S. Evans
Microstructures for Monitoring Wafer Uniformity of Reactive Ion Etching / R. Leung ; D. W. Howard
Water Dispersible Silanes for Wettability Modification of Polysilicon / A. M. Almanza-Workman ; S. Raghavan ; P. Deymier ; D. J. Monk ; R. Roop
Correlation of Metal Film Grain Size to Optical Measurement Results / T. Robinson ; C. Narayan ; J. Sledziewski ; G. Ready ; S. Alie
Preface
Micromachining
The Microfactory System using Electrochemical Machining / Masayuki Suda ; Kazuyoshi Furuta ; Toshihiko Sakuhara ; Tatsuaki Ataka
19.

図書

図書
editors, A.G. Baca, R.F. Kopf
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 214 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-18
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Preface
Symposium Organizers
State-of-the-art Program on Compound Semiconductors (XXXIII)
InP HBT and HEMT Technology and Applications / A. Gutierrez-Aitken ; A. K. Oki ; D. C. Streit ; R. Lai ; D. Sawdai ; Y. C. Chen ; E. Kaneshiro ; R. Grundbacher ; P. C. Grossman ; T. Block ; P. Chin ; M. Barsky ; M. Wojtowicz ; H. C. Yen
Reduced Area InGaAs/InP HBT Device Fabrication for High Speed Circuit Applications / R. F. Kopf ; N. G. Weimann ; R. A. Hamm ; R. W. Ryan ; A. Tate ; M. A. Melendes ; R. Melendes ; Q. Lee ; G. Georgiou ; Y. Baeyens ; Y-K. Chen
Non-Crystallographic Wet Etching of Gallium Arsenide / A. G. Baca ; J. R. Laroche ; P. C. Chang ; F. Ren
Chemical Etching Behavior of n-AlGaAs/p-AlGaAs Structures under Different Light Illumination Conditions / K. Shigyo ; Z. Kawazu
Progress in Mid-IR Type-II Interband Cascade Lasers / R. Q. Yang ; J. L. Bradshaw ; J. D. Bruno ; J. T. Pham ; D. E. Wortman
Development of III-Nitrides for Near-Infrared Optoelectronics using Intersubband Transitions / H. M. Ng ; C. Gmachl ; S. N. G. Chu ; A. Y. Cho
Visible Vertical Cavity Light Emitters for Fibre Optical Communication / M. Saarinen ; V. Vilokkinen ; P. Sipilo ; N. Xiang ; S. Orsila ; M. Guina ; P. Melanen ; M. Dumitrescu ; P. Uusimaa ; P. Savolainen ; M. Pessa
Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors / N. Y. Li ; E. Armour ; P. R. Sharps ; H. Q. Hou
Antimonide-Based Long-Wavelength Lasers on GaAs Substrates / J. F. Klem ; O. Blum
Novel MOS Schemes for Electronic Devices with Photoanodically Grown Oxides on GaN Surfaces / D. Mistele ; T. Rotter ; R. Ferretti ; H. Klausing ; F. Fedler ; O. K. Semchinova ; J. Stemmer ; J. Aderhold ; J. Graul
GaN Power Devices / S. J. Pearton ; A. P. Zhang ; G. Dang ; X. A. Cao ; K. P. Lee ; H. Cho ; B. P. Gila ; J. W. Johnson ; C. Monier ; C. R. Abernathy ; J. Han ; J.-I. Chyi ; C.-M. Lee ; T.-E. Nee ; C.-C. Chuo ; G. C. Chi
Fabrication of an Integrated Optics 1 to 2 Optical Switch / Y. Hernandez ; J.-P. Vilcot ; D. Decoster ; J. Chazelas
Optical Characterization of Acceptor Implantation in GaN / B. J. Skromme ; G. L. Martinez ; A. Suvkhanov ; L. Krasnobaev ; D. B. Poker
Cantilever Epitaxy: A Simple Lateral Growth Technique for Reducing Dislocation Densities in GaN and Other Nitrides / C. I. H. Ashby ; C. C. Willan ; N. A. Missert ; P. P. Provencio ; D. M. Follstaedt ; G. M. Peake ; L. Griego
The Formation Mechanism of SiC/Si Interface in the Growth of SiC Films on Si / K. S. Nahm ; K. C. Kim ; C. I. Park ; J. I. Roh
SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors / B. Luo ; J. I. Chyi ; T. E. Nee ; C. M. Lee ; C. C. Chuo ; T. J. Anderson
The Effect of N2 Plasma Damage on DC and RF Characteristics of HEMTs / V. P. Trivedi ; C. H. Hsu ; X. Cao ; C. S. Wu ; M. Hoppe ; J. Sasserath ; J. W. Lee
High Speed Devices for Wireless Applications II
III V Enhancement Mode Field Effect Transistor Technologies for Cellular Applications / J. Costa
Indium Phosphide HBT Device Parameter Extraction for Spice Modeling and Process Optimization / J.-M. Kuo ; M. Melendes ; Y. K. Chen
The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors
Fabrication and Materials Characterization of Pulsed Laser Deposited Nickel Silicide Ohmic Contacts to 4H n-SiC / M. W. Cole ; P. C. Joshi ; C. W. Hubbard ; E. Ngo ; J. D. Demaree ; J. K. Hirvonen ; M. Wood ; M. Ervin ; C. J. K. Richardson ; M. H. Wisnioski
Author Index
Subject Index
Preface
Symposium Organizers
State-of-the-art Program on Compound Semiconductors (XXXIII)
20.

図書

図書
editors C.L. Claeys ... [et al.] ; sponsored by the Electrochemical Society, Inc., Electronics Division
出版情報: Bellingham, Wash. : Published in cooperation with SPIE-the International Society for Optical Engineering , Pennington, N.J. : Electrochemical Society, c2000  xix, 696 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-17
Proceedings / SPIE -- the International Society for Optical Engineering ; v. 4218
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Preface
High Purity Silicon Fabrication Techniques
Advanced Silicon Wafers for 0.18 [mu]m Design Rule and Beyond: Epi and fFLASH! / R. Schmolke ; M. Blietz ; R. Schauer ; D. Zemke ; H. Oelkrug ; W. v. Ammon ; U. Lambert ; D. Graf
The Time Dependence of Point Defect Behavior near the Growth Interface in Cz-Si / B.M. Park ; I.S. Choi
Effect of Shape of Crystal-Melt Interface on Point Defect Reaction in Silicon Crystals / K. Nakamura ; S. Maeda ; S. Togawa ; T. Saishoji ; J. Tomioka
High Pull Speed for Fast Pulled Crystal in Cz Growth / H.J. Oh ; J.H. Wang ; K.-M. Kim ; H.-D. Yoo
Micro-Fluctuation of Growth-Rate and Grown-in Defect Distribution in Cz-Si / M. Hasabe ; J. Fukuda ; T. Iwasaki ; H. Harada ; M. Tanaka
Direct Proof of Argon Atoms Incorporated Into High-Purity Silicon Single Crystals During Growth in Argon Gas Ambient / A.G. Ulyashin ; R. Job ; W.R. Fahrner ; A.V. Mudryi ; A.I. Patuk ; I.A. Shakin
Nucleation of Void Defects in Cz Silicon / Y. Yamanaka ; K. Tanahashi ; T. Mikayama ; N. Inoue ; A. Mori
The Formation Mechanism of Coupled Voids in Czochralski Silicon / F. Ishikawa ; S. Sadohara
Valence Force Field Analysis of Nitrogen in Silicon / A. Koukitsu
Intrinsic and Inpurity Related Defects
Silicon Float Zone Crystal Growth as a Tool for the Study of Defects and Impurities / T.F. Ciszek ; T.H. Wang
Transient Simulation of Grown-in Defect Dynamics in Czochralski Crystal Growth of Silicon / T. Mori ; Z. Wang ; R.A. Brown
Detection of Oxygen-Related Defects in Silicon Wafers by Highly Selective Reactive Ion Etching / K. Nakashima ; Y. Watanabe ; T. Yoshida ; Y. Mitsushima
Misfit Dislocation Nucleation Study in P/P[superscript +] Si / P. Feichtinger ; M.S. Goorsky ; D. Oster ; T. D'Silva ; J. Moreland
Screening of Dislocations in Silicon by Point Defects / I.V. Peidous ; K.V. Loiko
Vacancy-Nitrogen Complexes in Float-Zone Silicon / F. Quast ; P. Pichler ; H. Ryssel ; R. Falster
Oxygen Precipitation Behavior and its Optimum Condition for Internal Gettering and Mechanical Strength in Epitaxial and Polished Silicon Wafers / K. Sueoka ; M. Akatsuka ; T. Onno ; E. Asayama ; Y. Koike ; N. Adachi ; S. Sadamitsu ; H. Katahama
Threshold Stresses of Dislocation Generation Onset in Silicon / N. Balasubramanian ; T. Schuelke
Aggressive Monitoring of OSFs Using High Temperature Oxidation / K.-M. Bae ; J.-R. Kim ; D.-M. Lee ; S.-S. Kim ; C.-G. Koh ; S.-H. Pyi
Formation and Annihilation of Epitaxial Stacking Faults Generated from Pre-Existing Nucleation Sites in Silicon / C.R. Cho ; K.Y. Noh ; D.H. Lee ; Y.S. Kim ; S.W. Ko ; C.W. Kim ; D.H. Kim ; C.B. Son ; S.J. Kim ; D.H. Cho ; J.J. Choi ; D.J. Kim ; K.M. Bae ; G.A. Rozgonyi
Bulk and Surface Properties of Cz Silicon After Hydrogen Plasma Treatments / V.P. Markevich ; L.I. Murin ; J.L. Lindstrom ; V. Raiko ; J. Engemann
Metallic Impurities in Silicon
Tin Doping Effects in Silicon / E. Simoen ; C. Claeys ; V.B. Neimash ; A. Kraitchinskii ; M. Kras'ko ; O. Puzenko ; A. Blondeel ; P. Clauws
In-Situ Measurement of Iron in P-type Silicon with the [mu]W-PCD Technique / M. Porrini ; P. Tessariol
Radial Distributions of Transition Metal Defects in Float Zone Silicon Crystals / H. Lemke ; W. Zulehner ; B. Hallmann
Progress in Understanding the Physics of Copper in Silicon / A.A. Istratov ; C. Flink ; S. Baluasubramanian ; E.R. Weber ; H. Hieslmair ; S.A. McHugo ; H. Hedemann ; M. Seibt ; W. Schroter
Effect of Cobalt and Copper Contamination on the Electrical Properties of Processed Silicon / J. Benton ; T. Boone ; D. Jacobson ; P. Silverman ; C. Rafferty ; S. Weinzierl ; B. Vu
Copper Stable Isotope Spike Method as A Tool for Low Temperature Out-Diffusion of Copper in P-Type Silicon / B.-J. Maeng ; H.-S. Oh ; Y.-K. Hong
Effect of Aluminum on Oxide Growth and Oxide Charges in Silicon Wafers / H. Shimizu ; M. Ikeda ; C. Munakata ; N. Nagashima
Gettering Studies
Impact of Annealing Temperature and Cooling Rate on the Gettering of Fe by Polysilicon Backside / M.B. Shabani ; Y. Shiina ; Y. Shimanuki
300 mm Epi PP Wafer: Is There Sufficient Gettering? / D. Graff ; R. Wahlich ; W. Siebert ; E. Daub ; W.v. Ammon
Influence of LSTD Size on the Formation of Denuded Zone in Hydrogen Annealed Cz Silicon Wafers / R. Takeda ; T. Minami ; H. Saito ; Y. Hirano ; H. Fujimori ; K. Kashima ; Y. Matsushita
Integrated Gettering of Metallic Contaminants by Nanocavities in FZ Silicon Wafers / I. Perichaud ; E. Yakimov ; S. Martinuzzi
On the Effect of the Precipitation on DRAM Device Yield / R. Winkler
Intrinsic Gettering in Nitrogen Doped Czochralski Crystal Silicon / D. Yang ; R. Fan ; Y. Shen ; D. Tian ; L. Li ; D. Que
Device Performance
Trends in Lifetime Measurements / D.K. Schroder
Epitaxial Layer Lifetime Characterization in the Frequency Domain / J.E. Park ; S.E. Tan ; B.D. Choi ; M. Fletcher ; A. Buczkowski ; F. Kirscht
Minority Carrier Lifetime and Impurity Level Scan Map in Silicon / O. Palais ; J.J. Simon
Lifetime and Leakage Current Studies in Shallow P-N Junctions Fabricated in a Deep High-Energy Boron Implanted P-Well / A. Poyai ; R. Rooyackers ; G. Badenes ; E. Gaubas
Carrier Lifetime Control and Characterization of High-Resistivity Silicon Used for High-Power Devices / H.-J. Schulze ; A. Frohnmeyer ; F.-J. Niedernostheide ; F. Hille ; P. Tutto ; T. Pavelka ; G. Wachutka
Two Dimensional Leakage Current Distribution of Ultrathin Oxide on Stepped Si Surface / M. Murata ; N. Tokuda ; D. Hojo ; K. Yamabe
The Gate oxide Quality of Annealed Cz Silicon Wafers and Its Influence on 4M DRAM Device Yield and Reliability
Investigation of GOI Test Methods on Silicon Surface Defect Failure Mechanisms / F. Gonzalez ; M. Hider ; R. Barbourm ; J. Hull ; S. Kitagawa
Gate oxide Integrity Response as a Function of Near the Surface Crystal Defects Morphology / G. Borionetti ; P. Godio ; F. Bonoli ; M. Cornara ; R. Orizio
Impacting Device Performance and Yield Through Sacrificial Oxidation Improvements / S. Ambadi ; D. Hannoun ; K. Kamekona ; J. Pearse ; G. Chang
On the Influence of the Interstitial Oxygen on DRAM Device Yield and Reliability
A Process Simulation Model for the Effects Due to Nitridation of Oxides / Y.-S. Oh ; D.E. Ward
Device Applications
High Resistivity Cz Silicon for RF Applications Substituting GaAs* / T. Abe ; W. Qu
Surface and Bulk Properties of Oxygenated FZ Silicon Wafers for Particle Detector Applications / P. Bellutti ; M. Boscardin ; G.-F. Dalla Betta ; L. Ferrario ; P. Gregori ; N. Zorzi
Intrinsic Defects in FZ Silicon and Their Impact on X-Ray PIN Sensor Parameters / H. Rieman ; A. Ludge ; K. Schwerd
SOI Wafer Fabrication by Atomic Layer Cleaving / M.I. Current ; I.J. Malik ; S.W. Bedell ; S.N. Farrens ; H. Kirk ; M. Korolik ; S. Kang ; M. Fuerfanger ; F.J. Henley
Effect of Material Properties on Stress-Induced Defect Generation in Trench SOI / W.A. Nevin ; K. Somasundram ; S. Blackstone ; S. Magee ; A.T. Paxton
A New Substrate Engineering Technique to Realize Silicon on Nothing (SON) Structure Utilizing Transformation of Sub-micron Trenches to Empty Space in Silicon (ESS) by Surface Migration / Y. Tsunashima ; T. Sato ; I. Mizushima
Novel and Improved Characterization Techniques
Silicon Defect characterization by High Resolution Laplace Deep Level Transient Spectroscopy* / A.R. Peaker ; L. Dobaczewski ; O. Andersen ; L. Rubaldo ; I.D. Hawkins ; K. Bonde Nielsen ; J.H. Evans-Freeman
Surface-Separated Collection of Ionic Species for Ion-Chromatography Analysis on Silicon Wafers / K. Yanagi ; H. Shibata ; K. Nagai ; M. Watanabe
Photomagnetic Detection of Doping Inhomogeneities in Silicon Crystals Using SQUID Magnetometers / H. Riemann ; J. Beyer ; Th. Schurig
The Measurement of Nitrogen in Silicon Substrates by SIMS / R.S. Hockett ; D.B. Sams
Laser Spectroscopy Methods for Nondestructive Analysis of Polycrystalline Silicon Thin Films and Silicon Surfaces / D. Milovzorov ; N. Chigarev
Impact of the Purity of Silicon on the Evolution of Ion Beam Generated Defects: From Research to Technology* / V. Privitera
Microscopic Characterization of Electrochemical Properties of Silicon Wafer Surfaces* / T. Homma ; J. Tsukano ; T. Osaka
Use of Diode Diagnostics for Silicon Wafer Quality Characterization: Effect of COP on PN Junction Leakage* / H. Kubota ; H. Nagano ; J. Sugamoto ; H. Matsushita ; M. Momose ; S. Nitta ; S. Samata ; N. Tsuchiya
Crystal Defect Information Obtained by Multiple Wafer Recleaning / L. Mule'Stagno ; S. Keltner ; R. Yalamanchili ; M. Kulkarni ; J. Libbert ; M. Banan
Resonance Ultrasonic Diagnostics of As-Grown and Process-Induced Defects in Cz Silicon / A. Belyaev ; I. Tarasov ; S. Ostapenko ; S. Koveshnikov ; V.A. Kochelap ; A.E. Beyaev
Deposition Mechanism of Trace Metals on Silicon Wafer Surfaces in Ultra Pure Water
A Study of "twin" [100] Square Hillock Silicon Crystalline Defects on Silicon Substrate in Wafer Fabrication Using 155 Wright Etch / H. Younan
Authors Index
Subject Index
Preface
High Purity Silicon Fabrication Techniques
Advanced Silicon Wafers for 0.18 [mu]m Design Rule and Beyond: Epi and fFLASH! / R. Schmolke ; M. Blietz ; R. Schauer ; D. Zemke ; H. Oelkrug ; W. v. Ammon ; U. Lambert ; D. Graf
21.

図書

図書
editors, R. Singh ... [et al.] ; [sponsord by] Dielectric Science and Technology and Electronics Divisions
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 226 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-7
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22.

図書

図書
editors, K.B. Sundaram ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  x, 286 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-7
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目次情報: 続きを見る
Preface
Organizers
Oxide Wear-Out, Reliability, Stress and Interfaces / I:
A Review of Oxide Wearout, Breakdown, and Reliability / D. Dumin
Surface And Interface Study Of Ion Beam Deposited Silicon oxide Thin films / Heinz D. Wazenboeck ; Emmerich Bertagnolli ; Bernhard Basnar ; Juergen Smoliner ; Martin Gritsch ; Herbert Hutter ; Josef Brenner ; C. Tomastik ; Herbert Storri
Study of Inversion Layer Hole Mobility In p-Mosfet During High-field Stressing / R. Jarawal ; D. Misra
Two Limiting Thinnesses Of The Ultrathin Gate Oxide / Samares Kar
SiO[subscript 2] Stress and Interfaces / II:
The Connection Between oxide leakage currents and Si/SiO[subscript 2] Interface Trap Generation / P. M. Lenahan
Charging Damage During Plasma Enhanced Dielectric Deposition / K. Cheung
Kinetics and Mechanisms of Organic Contaminant Interactions at Silicon Surfaces in High Temperature Processes / N. Rana ; P. Raghu ; F. Shadman
SiO[subscript 2] Films and Properties / III:
Remote Plasma Deposited Gate Dielectrics on Si and SiGe Mosfets / T. Ngai ; R. Sharma ; J. Fretwell ; X. Chen ; J. Chen ; W. Brookover ; S. Banerjee
Rapid Thermal Processes of High Permittivity Films on Silicon for ULSI Gate Dielectrics Applications / S. P. Tay ; R. Sharangpani ; Y. Z. Hu
Processing of Thick Thermal Gate Oxides in Trenchs / C. T. Wu ; R. Ridley ; G. Dolny ; T. Grebs ; J. Hao ; S. Suliman ; B. Venkataraman ; O. Awadelkarim ; R. Williams ; P. Roman ; J. Ruzyllo
Electrical Properties of SiO[subscript 2]-Films Prepared by VUV Chemical Vapor Deposition / Y. Motoyama ; J. Miyano ; K. Tosikawa ; Y. Yagi ; K. Kurosawa ; A. Yokotani ; W. Sasaki
SiO[subscript 2] Film Deposition on Different Substrate Materials by Photo- CVD Using Vacuum Ultraviolet Radiation / K. Toshikawa
Silicon Nitrides/ Oxynitrides / IV:
Low Energy Ion Irradiation of Silicon: Compound Formation and Segregation of Impurities / M. Petravic ; J. S. Williams ; P. N. K. Deenapanray
Characteristics of Silicon Oxynitrides Made By ECR Plasmas / J. A. Diniz ; P. J. Tatsch ; J. Swart
Radiation Hardening of Oxynitrides Formed By Low Nitrogen Implantation into Silicon Prior to Oxidation / J. Godoy Fo
Silicon Nitrides/ Oxynitrides II / V:
Material and Process Considerations of Ultra thin Silicon (Oxy) Nitride Films Grown on Silicon and SiO[subscript 2] Surfaces / C. P. D'Emic ; E. P. Gusev ; K. K. Chan ; T. Zabel ; M. Copel ; R. Murphy ; P. Kozolowski ; J. Newbury
Silicon OxyNitride: A Versatile Material for Integrated Optics Application / K. Worhoff ; A. Driessen ; P. V. Lambeck
Characterization of Silicon Oxynitride Thin Films Deposited By ECR-PECVD / C. Simionescu ; J. Wojcik ; H. K. Haugen ; J. A. Davies ; P. Mascher
Silicon Nitrides/ Oxynitrides III / VI:
Characterization of Low- Temperature Magnetoplasma- Grown Si Oxynitride and Si Oxide / H. Ikoma
Advances in Single Wafer Chemical Deposition of Oxide and Nitride films / W. Palmer ; Z. Gabric
High Integrity Direct Oxidation/Nitridation at Low Temperatures Using Radicals / T. Ohmi ; S. Sugawa ; M. Hirayama
Silicon Nitride
Thermally Induced Stress Changes in High Density Plasma Deposited Silicon Nitride Films / R. E. Shah ; H. Baumann ; D. Serries ; M. Mikulla ; R. Keiffer
Effect of Oxygen in Deposited Ultra Thin Silicon Nitride Film on Electrical Properties / K. Muraoka ; K. Kurihara
Influence of Low- energy argon Ion Bombardment and Vacuum Annealing on the Silicon Nitride Surface Properties / I. P. Petrenko ; V. A. Gritsenko ; L. M. Logvinsky ; H. Wong
Authors Index
Subject Index
Preface
Organizers
Oxide Wear-Out, Reliability, Stress and Interfaces / I:
23.

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図書
editor, Y. Kuo ; sponsoring divisions, Electronics, Dielectric Science and Technology
出版情報: Pennington, N.J. : Electrochemical Society, c2005  ix, 326 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; 2004-15
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図書
editors, P. C. Chang ... [et al.] ; sponsoring divisions, Electronics and Physical Electrochemistry
出版情報: Pennington, N.J. : Electrochemical Society, c2005  x, 486 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2005-04
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25.

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図書
editor, G. K. Celler ; assistant editors, S. Cristoloveanu ... [et al.] ; sponsoring division, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2005  xi, 396 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2005-03
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26.

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図書
editors, Evgeni P. Gusev ... [et al.] ; sponsoring divisions, Electronics, Dielectric Science and Technology, and High Temperature Materials
出版情報: Pennington, NJ : Electrochemical Society, c2005  xv, 634 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2005-05
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図書
editors, Cor Claeys ; sponsoring division, Electronics and Photonics
出版情報: Pennington, N.J. : Electrochemical Society, c2005  x, 560 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2005-08
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28.

図書

図書
editors, Anjana Devi ... [et al.] ; sponsoring divisions, High Temperature Materials, Dielectric Science and Technology, and Electronics and Photonics
出版情報: Pennington, NJ : Electrochemical Society, c2005  xviii, 1106 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2005-09
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29.

図書

図書
editors, R.F. Kopf ... [et al.] ; sponsoring divisions, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2003  x, 408 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-11
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Preface
Symposium Organizers
State-Of-The-Art Program on Compound Semiconductors XXXIX
Polarity-Selective Chemical Etching of GaN: From Nanotip Pyramids to Photonic Crystals / H. Ng ; A. Chowdhury ; W. Parz ; N. Weimann
Growth and Characterization of High Quality GaN on Silicon (111) Substrate / L. Chou ; Y. Chueh ; S. Chiou ; S. Gwo
Growth and Characterization of InGaN Quantum Dots in InGaN/GaN Superlattices / C.-P. Liu ; R. Chen ; Y.-L. Lai
Long-wavelength emission of GaInNAs Quantum Dots Grown on GaAs (001) / C.W. Tu
Development of 850nm VCSELs for OC-192 Applications / H.-C. Kuo ; Y.-H. Chang ; T.-H. Hseuh ; F. Lai ; S.-C. Wang
Development of InGaAsN-based 1300 nm VCSELs / Y.-L. Chang ; T. Takeuchi ; M. Leary ; D. Mars ; A. Tandon ; R. Twist ; S. Belov ; D. Bour ; M. Tan ; D. Roh ; Y.-K. Song ; L. Mantese ; A. Luan
Influence of a Low Composition InxGal-xN/GaN Superlattice on the Optical Properties of Blue and Green InxGal-xN Based LEDs / J. Ramer ; D. Florescu ; D. Lee ; E. Armour
Dramatic Improvements in AlGaN/GaN HEMT Device Isolation Characteristics After UV-Ozone Pre-Treatment / N. Moser ; R. Fitch ; D. Via ; A. Crespo ; M. Yannuzzi ; G. Jessen ; J. Gillespie ; B. Luo ; F. Ren ; C. Abernathy ; S. Pearton ; B. Gila
Electric Field Modulation of ZnO Film Conductance in ZnO-Based FET Structures / Y.W. Kwon ; D. NOrton
Growth of Polycrystalline HgSe by Electrochemical Atomic-layer Epitaxy (EC-ALE) / M. Mathe ; S. Cox ; U. Happek ; J. Stickney
Effect of the Intermetallic Compounds on the Joint Strength of the Optical Module / N.-K. Kim ; K.-S. Kim ; N.-H. Kim ; E.-G. Chang
Fabrication of nTiO2Thin Films by SPD Method for Efficient Photosplitting of Water / S. Khan ; S. Smith
Resource Conservation and Fab Cost Saving Through DIW and Chemical Consumption Reduction in Pre-diffusion Cleaning Processes / M. Strada
Growth and Characterization of High-Ge Content SiGe Virtual Substrates / M. Erdtmann ; M. Carroll ; J. Carlin ; T. Langdo ; R. Westhoff ; C. Leitz ; V. Yang ; M. Currie ; T. Lochtefeld ; K. Petrocelli ; C. Vineis ; H. Badawi ; M. Bulsara
Spray Pyrolytically Deposited Zn-doped p-Fe2O3 for Photoelectrolysis of Water / W. Ingler Jr.
Characterization of Silicon Carbide Electrochemical Etch in Hydrofluoric Acid Aqueous Solution / G. D'Arrigo ; C. Bongiorno ; V. Raineri
Surface Pitting and Porous Layer Growth on n-InP Anodes / C. O'Dwyer ; M. Serantoni ; D.N. Buckley
UHV-EC Studies of Wet Cleaning Procedures for GaAs Substrates for Electrodeposition / M. Muthuvel ; L. Ward
Crystal Quality Determination of Wide Bandgap Materials Using X-ray Techniques / P. Feichtinger ; K. Bowen ; B. Poust ; M. Goorsky ; M. Wojtowicz ; R. Sandhu
Mg Doping Concentration Influenced by Polarity of GaN Layer in InGaN/GaN Superlattice Structure / Y.-W. Lin
Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics symposium IV
High Performance Wide-Bandgap Photonic and Electronic Devices Grown by MBE / A.M. Dabiran ; A. Osinsky ; B. Hertog ; M.A. Kauser ; P.P. Chow ; V. Kumar ; I. Adesida
High Efficiency Nitride LEDs for use in Solid State Lighting Applications / A.J. Fischer ; D.D. Koleske ; A.A. Allerman ; M.H. Crawford ; K.H.A. Bogart ; C.C. Mitchell ; D.M. Follstaedt ; K.C. Cross ; K.W. Fullmer ; J.J. Figiel
Optical Properties of GaN/AlN Quantum Dots grown by Molecular Beam Epitaxy / A. Neogi
Cathodoluminescence Studies of Electron Injection-Induced Effects in III-Nitrides / William Burdett ; Leonid Chernyak ; Andre Osinski
Mg Surface Treatment for Optimizing Contact and Bulk Properties of p-type GaN Grown by Ammonia- Molecular-Beam Epitaxy / H. Tang ; J.A. Bardwell ; J. B. Webb ; S. Rolfe ; S. Moisa ; I. Sproule ; S. Raymond
Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics / B.P. Gila ; J. Kim ; R. Mehandru ; J.R. LaRoche ; A.H. Onstine ; C.R. Abernathy ; S.J. Pearton
Fabrication, Characterization and Applications of AlInGaN Light-Emitting Diodes / X. A. Cao ; S. D. Arthur ; A. Ebong ; S. F. LeBoeuf ; D. W. Merfeld
High Energy and Spatial Resolution EELS from GaN / I. Arslan ; S. Ogut ; N. D. Browning
Localized Quantum State Luminescence from Wide Bandgap ZnS and GaN Thin Films / Nigel Shepherd ; Ajay Kale ; William Glass ; Joo Han Kim ; David DeVito ; Mark Davidson ; Paul H. Holloway
Laser-Metallized Silicon Carbide Schottky Diodes for Millimeter Wave Detection and Frequency Mixing / I. A. Salama ; C. F. Middleton ; N. R. Quick ; G. D. Boreman ; A. Kar
Surface State Characterization Methods for SiO[subscript 2] on 4H-SiC / J. R. LaRoche ; J. W. Johnson ; B. S. Kang ; Y. Irokawa ; S. J. Pearton ; G. Chung
The Effect of External Strain on the Conductivity of AlGaN/GaN High Electron Mobility Transistors / S. Kim ; K. Baik ; B. P. Gila ; C. R. Abernathy ; C. -C. Pan ; G. -T. Chen ; J. -I. Chyi ; V. Chandrasekaran ; M. Sheplak ; T. Nishida ; S. N. G. Chu
High Performance AlGaN/GaN HEMTs with Recessed Gate / Yoshiaki Sano ; Katsuaki Kaifu ; Juro Mita ; Hideyuki Okita ; Tomohiko Sagimori ; Takashi Ushikubo ; Hiroyasu Ishikawa ; Takashi Egawa ; Takashi Jimbo
GaN Power Rectifiers and Field-Effect Transistors on Free-Standing GaN Substrates / Jihyun Kim ; S. S. Park ; Y. J. Park ; K. H. Baik|cS. J. Pearton
Chemical Sensing with GaN Devices / Martin Eickhoff ; Georg Steinhoff ; Olaf Weidemann ; Martin Hermann ; Barbara Baur ; Gerhard Mueller ; Martin Stutzmann
Magnetic Doping of III-V Nitrides and Novel Room Temperature Sensing Applications / J. M. Zavada ; R. M. Frazier ; J. Kelly ; R. Rairigh ; A. F. Hebard ; J.Y. Lin ; H.X. Jiang
Optimization of GaMnN Growth Conditions for Novel Spintronic Applications / G.T. Thaler ; R.M. Frazier ; R. Rairaigh ; A. Hebard
Growth of MgCaO on GaN / A. H. Onstine ; A. Herrero ; B. F. Ren
In-Situ Chemical Surface Treatments For The Removal of AlN/SiC Interfacial Contamination / D.O. Stodilka ; E. Lambers
Design, Fabrication, and Evaluation of High Performance Diamond-Based Power Diodes / Yasar Gurbuz ; Weng P. Kang ; Jimmy L. Davidson
Ferromagnetism In Mn- And Sn-Doped ZnO Films Grown By Pulsed Laser Deposition / M. Ivill ; D.P. Norton ; A.F. Hebard
Synthesis and Characterization of Ferromagnetic AlN and AlGaN Layers / G. T. Thaler ; M. L. Nakarmi ; J. Y. Lin ; H. X. Jiang ; R. G Wilson
Electronic Structure Of GaNP: Insights From Optical Studies / A. Buyanova ; W.M. Chen ; A. Polimeni ; M. Capizzi
Author Index
Subject Index
Preface
Symposium Organizers
State-Of-The-Art Program on Compound Semiconductors XXXIX
30.

図書

図書
editors, S. Kar ... [et al.] ; sponsoring divisions: Dielectric Science and Technology, Electronics
出版情報: Pennington, NJ : Electrochemical Society, c2003-c2004  2 v. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-28, 2003-22
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Symposium Chairs
Preface
Table of Contents
Facts about the Electrochemical Society
High-K Gate Dielectrics - General / Chapter 1:
Challenges for the Integration of High-K Gate Dielectrics / M. Quevedo-Lopez ; B. E. Gnade ; R. M. Wallace
Correlation between the Material Constants and a Figure of Merit for the High-K Gate Dielectrics / S. Kar ; R. Singh
Binary Oxide High-K Gate Dielectrics / Chapter 2:
High Dielectric Constant Gate Insulator Technology using Rare Earth Oxides / H. Iwai ; S. Ohmi ; S. Akama ; C. Ohshima ; I. Kashiwagi ; A. Kikuchi ; J. Taguchi ; H. Yamamoto ; I. Ueda ; A. Kuriyama ; J. Tonotani ; Y. Kim ; Y. Yoshihara ; H. Ishiwara
High Quality ZrO[subscript 2] Thin Films on [left angle bracket]100[right angle bracket] Si Substrates as a Gate Dielectric Material: Processing and Characterization / M. Fakhruddin ; K. F. Poole ; S. V. Kondapi
HfO[subscript 2] Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium / J. Schaeffer ; N. V. Edwards ; R. Liu ; D. Roan ; B. Hradsky ; R. Gregory ; J. Kulik ; E. Duda ; L. Contreras ; J. Christiansen ; S. Zollner ; P. Tobin ; B.-Y. Nguyen ; R. Nieh ; M. Ramon ; R. Rao ; R. Hegde ; R. Rai ; J. Baker ; S. Voight
Electrical Characteristics Improvement of Dy[subscript 2]O[subscript 3] Thin Films by In-Situ Vacuum Anneal
Electrical and Physical Characterization of Zirconium-Doped Tantalum Oxide Films / J.-Y. Tewg ; J. Lu ; Y. Kuo ; B. Schueler
Effect of Deposition Sequence and Plasma Treatment on ALCVD HfO[subscript 2] n-MOSFET Properties / C. Lim ; A. Hou ; J. Gutt ; S. Marcus ; C. Pomarede ; E. Shero ; H. de Waard ; C. Werkhoven ; L. Chen ; J. Tamim ; N. Chaudhary ; G. Bersuker ; J. Barnett ; C. Young ; P. Zeitzoff ; G. A. Brown ; M. Gardner ; R. W. Murto ; H. R. Huff
Characteristics of High-K Gd[subscript 2]O[subscript 3] Films Deposited on Different Orientation of Si Substrate
Hafnium-Doped Tantalum Oxide High-K Dielectrics / P. C. Liu
Silicate/Aluminate High-K Dielectrics and Reliability / Chapter 3:
Defect Generation in High-K Dielectric Stacks: Characterization and Modelling / M. Houssa ; J. L. Autran ; V. V. Afanas'ev ; A. Stesmans ; M. M. Heyns
Ultra-Thin Zirconium and Hafnium Silicate Films Deposited by MOCVD on Si(100) / D. Landheer ; X. Wu ; H.-W. Chen ; M.-S. Lee ; S. Moisa ; T.-Y. Huang ; T.-S. Chao ; Z.-H. Lu ; W. N. Lennard
Effect of Post-Annealing on the Electrical Properties of ZrO[subscript 2] and ZrAlO / M. Mansouri ; Y.-L. Chiou ; Y. Ono ; S. T. Hsu
Improved Scalability of High-K Gate Dielectrics by using Hf-Aluminates / T. H. Hou ; H. de Warrd
Reliability and Plasma-Induced Degradation of High-K Gate Dielectrics in MOS Devices / K.-S. Chang-Liao ; P.-J. Tzeng
Stability of High-K Thin Films for Wet Process
High-K Gate Dielectric Interfaces / Chapter 4:
Nitrogen Incorporation and High Temperature Forming Gas Anneal For High-K Gate Dielectrics / J. C. Lee ; R. Choi ; K. Onishi ; H. Cho ; C. Kang ; S. Krishnan
Integrity of Hafnium Silicate/Silicon Dioxide Ultrathin Films on Silicon / J. Morais ; L. Miotti ; G. V. Soares ; R. Pezzi ; K. P. Bastos ; M. C. M. Alves ; I. J. R. Baumvol ; A. L. P. Rotondaro ; J. J. Chambers ; M. R. Visokay ; L. Colombo
Suppression of Silicidation for Zirconia, Hafnia, and Silicate on Silicon by Helium Annealing / K. Muraoka
Analysis of Electrically Active Defects at Si(100)-HfO[subscript 2] Interface / B. J. O'Sullivan ; E. O'Connor ; P. K. Hurley ; M. Modreanu ; F. Roussel ; H. Roussel ; M. A. Audier ; J. P. Senateur ; Q. Fang ; I. W. Boyd ; C. Jimenez ; T. Leedham
Thermal Stability of the HfO[subscript 2]/SiO[subscript x]N[subscript y]-Si Interface / R. P. Pezzi ; H. Boudivov ; R. I. Hegde ; H. H. Tseng ; P. J. Tobin
Non-Contact Electrical Characterization of High-Dielectric-Constant (High-K) Materials / P. Y. Hung ; B. Foran ; A. Diebold ; X. Zhang ; C. Oroshiba
High-K Capacitor Dielectrics / Chapter 5:
Ruthenium Bottom Electrode Prepared by Electroplating for High-K DRAM Capacitor / J. J. Kim ; O. J. Kwon ; M. S. Kang
Regional Charge Transport Characteristics of Integrated Metal-Oxide MIM Capacitors / D. R. Roberts ; S. Kalpat ; T. P. Remmel ; M. A. Said ; M. V. Raymond ; R. Ramprasad ; E. D. Luckowski ; M. Miller
High Capacitance and Low Leakage Ta[subscript 2]O[subscript 5] MIM Capacitor for DRAM / W. Li ; G. S. Sandhu
High Dielectric Constant Metal Oxide Films via Photochemical Metal Organic Deposition (PMOD) Process / S. P. Mukherjee ; P. J. Roman, Jr. ; H. O. Madsen ; L. G. Svendsen ; M. A. Fury ; S. J. Barstow ; A. Jeykumar ; C. L. Henderson
Seed Layer Free Ruthenium Precursor for MOCVD / N. Oshima ; T. Shibutami ; K. Kawano ; S. Yokoyama ; H. Funakubo
Low-Leakage Tantalum Oxide MIM Capacitor Module for Cu-Interconnected RF BiCMOS Technology / C. C. Barron ; M. Sadd ; P. Zurcher
Author Index
Subject Index
Interface Issues
Tailoring High-K/Silicon Interface for Nanoelectronics Applications / R. Puthenkovilakam ; J. Chang
Reducing the Interfacial Formation of SiO[subscript x] in HfO[subscript 2] MOS Structures: A Study in Pre-Deposition Cleaning and Surface Oxidation, and Post-Deposition Annealing / H. Harris ; K. Choi ; N. Biswas ; I. Chary ; L. Xie ; N. Mehta ; G. Kipshidze ; M. White ; H. Temkin ; S. Gangopadhyay
Influence of the 5 A TaN[subscript x] Interface Layer on Dielectric Properties of the Zr-Doped TaO[subscript x] High-K Film
Plasma Modification of Hf Based High-K Dielectrics: Effect of Nitridation and Silicon Nitride Deposition / W. Tsai ; J. W. Maes ; H. De Witte ; J. Chen ; A. Delabie ; R. Carter ; O. Richard ; M. Caymax ; T. Conrad ; E. Young ; S. DeGendt
Method for Determining the Effectiveness of Silicon Nitride as a Barrier Layer for HfO[subscript 2] / H. Kraus ; J. Snow ; P. van Doorne ; W. Fyen ; P. W. Mertens ; F. Kovacs
Effect of Surface Preparation on High-K Gate Stack Device Performance / N. Moumen ; B. H. Lee ; J. Peterson
Deposition Methods and Processing - I
Some Recent Developments in the Metalorganic Chemical Vapor Deposition of High-K Dielectric Oxides / P. R. Chalker ; A. C. Jones
A Comparative Study of Erbium Oxide and Gadolinium Oxide High-K Dielectric Thin Films Grown by Low-Pressure Metalorganic Chemical Vapour Deposition (MOCVD) using [beta]-Diketonates as Precursors / M. P. Singh ; C. S. Thakur ; K. Shalini ; T. Shripathi ; N. Bhat ; S. A. Shivashankar
HfO[subscript x]N[subscript y] and HfSi[subscript x]O[subscript y]N[subscript z] High-K Layers Deposited by MOCVD in Mixed Gas Flows of N[subscript 2]O and O[subscript 2] / C. Zhao ; S. Van Elshocht ; T. Conard ; Z. Xu ; S. DeGendt|cM. Heyns
Electrical Characterization - I
Internal Photoemission over High-K Insulating Barriers / V. V. Afanas'ev
Leakage Current Behavior of HfO[subscript 2] Thin Films / M. N. Jones ; Y. W. Kwon ; D. P. Norton
Experimental Values of a Quantization Index of the Accumulation Layers of Different High-K Gate Dielectrics / T. Kachru ; M. Bhagat
Deposition Methods and Processing - II
Tensile Strain in Si due to Expansion of Lattice Spacings in CeO[subscript 2] Epitaxially Grown on Si (111) / Y. Nishikawa ; D. Matsushita ; N. Satou ; M. Yoshiki ; T. Schimizu ; T. Yamaguchi ; H. Satake ; N. Fukushima
Selective Wet Etching of Hf-based Layers / M. Claes ; V. Paraschiv ; H. Boutkabout ; T. Witters ; E. Rohr ; B. Coenegrachts ; J. Vertommen ; R. Lindsay ; W. Boullart ; M. Heyns
Alternating Pulse Deposition of High-K Metal Oxide Thin Films using Hf(NO[subscript 3])[subscript 4] as a Metal and an Oxygen Source with Multiple In-Situ Annealing / J.F. Conley, Jr. ; D. Tweet ; G. Stecker ; R. Solanki ; W.W. Zhuang
Improvement of Electrical Properties of Alumina Films by Nitrogen Added Plasma Enhanced Atomic Layer Deposition / J.W. Lim ; S.J. Yun ; J.H. Lee
The Role of TXRF in the Introduction of High-K Materials into IC Processing / D. Hellin ; B. Onsia ; C. Vinckier
Metal Gates
Characterization of Resistivity and Work Function of Sputtered-TaN Film for Gate Electrode Applications / C. S. Kang ; H.-J. Cho ; Y. H. Kim ; C. Y. Kang ; A. Shahriar ; C. H. Choi ; S. J. Rhee
NbO as a Gate Electrode for NMOSFETs / W. Gao ; J. F. Conley
A Novel Iridium Precursor for MOCVD / M. Takamori ; T. Yamakawa ; S. Watari ; H. Fujisawa ; M. Shimizu ; H. Niu
Advanced Ruthenium Precursors for Thin Film Deposition / C. A. Hoover ; M. M. Litwin ; J. Peck ; G. B. Piotrowski ; D. M. Thompson
Silicates and Effects of Post-Deposition Treatments / Chapter 6:
Effects of NH[subscript 3] Annealing on High-K HfSiON/HfO[subscript 2] Gate Stack Dielectrics
Nitridation of Hafnium Silicate Thin Films Deposited by Atomic Layer Deposition / Y. Senzaki ; H. Chatham ; R. Higuchi ; C. Bercaw ; J. DeDontney
Thermal Stability and Compatibility with Cmos Processing / Chapter 7:
Scaling of Hf-Based Gate Dielectrics--Integration with Polysilicon Gates / W. Deweerd ; V. Kaushik ; A. Kerber ; S. Kubicek ; M. Niwa ; L. Pantisano ; R. Puurunen ; L. Ragnarsson ; T. Schram ; Y. Shimamoto ; W. Vandervorst
Suppression of Silicidation in Poly-Si/High-K Insulator/SiO[subscript 2]/Si Structure by Helium Through Process
Effect of Post Metallization Annealing for La[subscript 2]O[subscript 3] Gate Thin Films on Electrical Characteristics / S.-I. Ohmi ; K. Tsutsui
Defect Characterization and Reliability / Chapter 8:
Photoelectron Spectroscopy Investigation of High K Dielectrics / K. Demirkan ; A. Mathew ; R. L. Opila
Soft Breakdown Phenomena in High-K Gate Dielectrics
Low Frequency Noise Study of n-MOSFETs with HfO[subscript 2] Gate Dielectric / E. Simoen ; A. Mercha ; C. Claeys
Simulations of Bias Temperature Instabilities in p-MOSFETs with Hf[subscript x]SiO[subscript y]-Based Gate Dielectrics / C. Bizzari
The Effects of Forming Gas Anneal Temperature and Dielectric Leakage Current on TDDB Properties of HfO[subscript 2] Devices / Y.-H. Kim
Charge Trapping and Electron Mobility Degradation in MOCVD Hafnium Silicate Gate Dielectric Stack Structures / C. D. Young ; T.H. Hou ; E. Cartier ; P. Lysaght ; J. Bennett ; C.-H. Lee ; S. Gopalan ; G. Groeseneken
Electrical Characterization - II / Chapter 9:
High Hole Mobility of Al[subscript 2]O[subscript 3] MOSFETs on Dislocation Free Ge-on-Insulator Wafers / A. Chin ; D.S. Yu ; C.H. Wu ; C.H. Huang ; W.J. Chen
Extraction of the High-K Gate Dielectric Parameters from the Capacitance Data
Characteristics of Thermally Evaporated HfO[subscript 2] / R. Garg ; N. A. Chowdhury ; R. K. Jarwal ; D. Misra ; P. K. Swain ; M. Bhaskaran
Characterization of High-K Dielectric Stacks for Flash Memory Applications / Y.L. Chiou
Electrical Characteristics of High-K Stack Gate Dielectric Thin Films with La[subscript 2]O[subscript 3] as a Buffer Layer
Low-frequency Noise Characteristics of MISFETs with La[subscript 2]O[subscript 3] Gate Dielectrics / H. Sauddin
Investigation of High-K Dielectric Properties with the Non-Contact SASS Technique / M. Wilson ; J. Lagowski ; J. D'Amico ; P. Edelman ; A. Savtchouk
Electrical Characteristics of High-K La[subscript 2]O[subscript 3] Thin Film Deposited by E-Beam Evaporation Method
Ferroelectric Layers and Memory Devices / Chapter 10:
Reduction in Programming Voltage of Non-Volatile Flash Memory Using High-K Dielectric Stacks / Y. L. Chiou
Reaction Mechanism of a Titanium Source, Ti(MPD)(METHD)[subscript 2], in Metalorganic Chemical Vapor Deposition of (Ba,Sr)TiO[subscript 3] Films / T. Nishimura ; T. Nakamura ; K. Tachibana
Characteristics of (Pb, Sr)TiO[subscript 3] Films Post Treated by Low Temperature Technologies / J.-L. Wang ; C.-K. Jan ; D.-C. Shye ; M.-W. Kuo ; H.-C. Cheng
Symposium Chairs
Preface
Table of Contents
31.

図書

図書
editors, J. Ruzyllo ... [et al.] ; sponsoring divisions: Electronics, Dielectric Science and Technology
出版情報: Pennington, NJ : Electrochemical Society, c2004  xi, 436 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-26
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目次情報: 続きを見る
Preface
The Science and Technology of the Functional Water / M. Toda ; S. Uryuu
Single Wafer Cleaning
Effective Post-Etch Residue Removal on Low-k Films Using Single Wafer Processing / E. Kesters ; J. Ghekiere ; P. Van Doorne ; G. Vereecke ; P.W. Mertens ; M.M. Heyns
Aqueous Single Pass Single Wafer Al/Via Cleaning / S. Verhaverbeke ; C. Beaudry ; P. Boelen
Improved Rinsing Efficiency on Post-Etch Residue Wet Clean for Cu/Low-k Damascene Structures / C.K. Chang ; C.F. Tsang ; V. Nguyen ; Q. Zhang ; T.H. Foo
Single Wafer Wet Cleaning Based on Short Cycle Time, Ambient Temperature and a Small Amount of Chemical / K.-I. Sano ; A. Izumi
Innovative Surface Preparation Solutions for Sub-90 nm Ic Devices / E. Baiya ; J. Rosato ; R. Yalamanchili
Predictive Model-Based Control of Critical Oxide Etches for Sub-100 nm Processes in a Single Wafer Wet Processing System / Y. Lu ; M.R. Yalamanchili
Non-IPA Wafer Drying Technology for Single-Spin Wet Cleaning / K. Miya ; T. Kishimoto
Front End of the Line Cleaning
Integration of High-k Gate Dielectrics--Wet Etch Cleaning and Surface Conditioning / S. De Gendt ; S. Beckx ; M. Caymax ; M. Claes ; T. Conard ; A. Delabie ; W. Deweerd ; D. Hellin ; H. Kraus ; B. Onsia ; V. Parishev ; R. Puurunen ; E. Rohr ; J. Snow ; W. Tsai ; S. Van Elshocht ; J. Vertommen ; T. Witters ; M. Heyns
Study of the Effect of Silicon Surfce Treatment on Eot in High-k Dielectric Mos Gate Stack / K. Chang ; K. Shanmugasundaram ; D.-O. Lee ; P. Roman J. Shallenberger ; F.-M. Chang ; J. Wang ; R. Beck P. Mumbauer ; R. Grant ; J. Ruzyllo
Atomic Layer Deposition of Silicon Nitride Barrier Layer for Self-Aligned Gate Stack / C. Finstad ; A. Muscat
Sub-Nanometer High -k Gate Stack Scaling Using the Hf-Last/NH[subscript 3] Anneal Interface / J. Peterson ; J. Barnett ; C. Young ; A. Hou ; J. Gutt ; S. Gopalan ; C.H. Lee ; H.J. Li ; N. Moumen ; N. Chaudhary ; B.H. Lee ; G. Bersuker ; P. Zietzoff ; G.A. Brown ; P. Lysaght ; M. Gardner ; R.W. Murto ; H. Huff
Improvements in Advanced Gate Oxide Electrical Performance by the Use of an Ozonated Water Clean Rpocess / D. Riley
Effect of Rie Sequence and Post-Rie Surface Processing on the Reliability of Gate Oxide in a Trench / T. Grebs ; R. Ridley ; C.-T. Wu ; R. Agarwal ; J. Mytych ; W. Dimachkie ; G. Dolny ; J. Michalowicz
Minimizing Oxide Loss in Immersion SC-1 Process / J. Butterbaugh ; S. Loper ; T. Wagener
Performance of an Advanced Front of the Line Clean Compared to the Process of Record Clean in a Manufacturing Environment / R. Novak ; I. Kashkoush ; J. Nolan ; J. Hunter ; J. Straight
The Mechanism of Poly-Si Etching During Poly/W Gate Cleaning by Fluorine Based Cleaning Solution / S.Y. Kim ; S.J. Choi ; C.K. Hong ; W.S. Han ; J.T. Moon
Physical and Chemical Methods of Particle Removal
Mechanisms of Particle Removal During Brush Scrubber Cleaning / K. Xu ; R. Vos ; P. Mertens ; C. Vinckier ; J. Fransaer
Evaluation of Megasonic Cleaning Systems for Particle Removal Efficiency and Damaging / F. Holsteyns ; J. Veltens ; M. Lux ; S. Arnatus ; K. Kenis
Mechanical Resistance of Fine Microstructures Related to Particle Cleaning Mechanisms / F. Tardif ; O. Raccurt ; J.C. Barbe ; F. De Crecy ; P. Besson ; A. Danel
Evaluation of Megasonic Cleaning Processes / A. Riskin ; A. Maes
Study of the Cleaning Control Using a Megahertz Nozzle Sound Pressure Monitor System for Single-Plate Spin Cleaners / H. Fujita ; N. Hayamizu ; T. Goshizono ; N. Sakurai
Experimental Validation of a Science-Based Undercut Removal Model for the Cleaning of Micron-Scale Particles from Surfaces / G. Kumar ; S. Beaudoin
Resonance Damage of Semiconductors by Acoustic Excitation / K. Christenson
Substrate Damage-Free Laser Shock Cleaning of Particles / J.G. Park ; A. Busnaina ; J.M. Lee ; S.Y. You
Effect of Surfactants on Particle Contamination of Silicon Surface in HF Solutions / T. Vehmas ; H. Ritala ; O. Anttila
Supercritical, Cryogenic, and Dry Cleaning
In Situ Process for Periodic Cleaning of Low Temperature Nitride Furnaces / D. Foster ; R. Herring ; J. Ellenberg ; A. Johnson ; C. Hartz
Making Supercritical Co[subscript 2] Cleaning Work: Proper Selection of Co-Solvents and Other Issues / A. Sehgal
Chemical Additive Formulations for Silicon Surface Cleaning in Supercritical Carbon Dioxide / M. Korzenski ; C. Xu ; T. Baum ; K. Saga ; H. Kuniyasu ; T. Hattori
Surfactant Enabled Supercritical Co[subscript 2] Cleaning Processes for Beol Applications: Post-Barrier Breakthrough / J. DeYoung ; S. Gross ; M. Wagner ; Z. Hatcher ; C. Ma
Co[subscript 2]--Expanded Liquids as Alternatives to Conventional Solvents for Resist and Residue Removal / M. Spuller ; D. Hess
Photoresist Stripping Using Supercritical Co[subscript 2]--Based Processes / V. Perrut ; C. Millet ; J. Daviot ; M. Rignon
Post-Etch Cleaning of 300 mm Dual Damascene Low-k Dielectric Structures Using Supercritical Co[subscript 2] / R.B. Turkot, Jr. ; V.S. RamachandraRao ; S.A. Iyer ; S.C. Clark
Impact of Phase Behavior on Photresist Removal Using Co[subscript 2] Based Mixtures / G. Levitin ; S. Myneni
Copper Low-k Contaminantion and Post Etch Residues Removal Using Supercritical Co[subscript 2]-Based Processes / L. Broussous ; O. Renault
Water Removal and Repair of Porous Ultra-Low k Films Using Supercritical Co[subscript 2] / B. Xie
Cleaning of Fragile Fine Structurers With Cryogenic Nitrogen Aerosols / H. Saito ; A. Munakata ; D. Ichishima ; T. Yamanishi ; A. Okamoto
Post-CMP Cleaning
Advanced Front end of the Line Clean for Post-CMP Processes / T. Nolan ; D. Nemeth
Low Carbon Contamination and Water Mark Free Post-CMP Cleaning of Hydrophobic Osg Dielectrics / K. Bartosh ; E. Brown ; S. Naghshineh ; D. Peters ; E. Walker
Adhesion and Removal of Silica and Alumina Slurry Particles During Cu CMP Process / J. Park ; A.A. Busnaina
Post-Copper CMP Cleaning Galvanic Phenomenon Investigated by Eis / C. Gabrielli ; E. Ostermann ; H. Perrot ; S. Mege
Aqueous Cryogenically Enhanced Post-Copper CMP Cleaning / S. Banerjee ; A. Via ; S. Joshi ; J. Eklund
Organic and Metal Contaminant Removal
Characterizing Etch Residue Removal From Low-k Ild Structures Using Aqueous and Non-Aqueous Chemistries / J. Moore ; C. Meuchel
Reversing of Silicon Surface Aging by Lamp Cleaning / J. Shallenberger
Advanced Photo Resist Removal Using O[subscript 3] and Moist Upw in Semiconductor Production / G. Philit ; L. von Aswege ; M. Madore ; K. Wolke ; M.-C. Clech ; E. Asselin-Degrange ; A. Chabli ; D. Louis
Cleaning Chemistry with Complexing Agents (CAs): Ca Degradation Monitoring by UV/VIS Spectroscopy / O. Doll ; B. Kolbesen
Additive Technologies for Sub 100 nm Device Cleaning / H. Morinaga ; A. Itou ; H. Mochizuki ; M. Ikemoto
Degradation of Oxide Properties Caused by Low-Level Metallic Contamination / A. Hoff ; E. Oborina ; S. Aravamudhan ; A. Isti
Cleaning Chemistry with Complexing Agents (CAs): Decomposition of CAs in Hydrogen Peroxide and Apm Studied with Hplc / S. Metzger ; B.O. Kolbesen
Cleaning of Metal Gate Stacks for the Sub 90 nm Technology Node / K. Vermeyen ; W. Fyen ; F. Kovacs
Passivation of Aluminum and Aluminum Copper Alloys in Aqueous Acid / I. Rink ; M. Knotter
Behaviour of Aluminum in Ozonated Water, optical and Electrochemical Study / A. Pehkonen ; K. Solehmainen ; L. Gronberg
Influence of Aluminum Bond Pad Suraface Condition on Probe Ability / K. Gunturu ; C. Hatcher ; K. Burnside ; T. Corsetti ; R. Lappan ; J. Prasad
Open Circuit and Galvanostatic Behavior of Copper Oxidized and Reduced in Various Solutions / M. Hughes
Author Index
Subject Index
Preface
The Science and Technology of the Functional Water / M. Toda ; S. Uryuu
Single Wafer Cleaning
32.

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editors, T. D. Moustakas, S. E. Mohney, S. J. Pearton ; [sponsored by] Dielectric Science and Technology, Electronics, and High Temperature Materials Divisions
出版情報: Pennington, NJ : Electrochemical Society, c1999  vii, 230 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 98-18
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33.

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editors, M. Cahay ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1999  xi, 690 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 98-19
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34.

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edited by S. S. Li ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1999  vii, 242 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 98-21
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editor, Yue Kuo
出版情報: Pennington, NJ : Electrochemical Society, c1999  xi, 428 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; 98-22
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36.

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editors, T. Abe ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1999  ix, 530 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-1
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37.

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editors, C.S. Murthy, G.R. Srinivasan, S.T. Dunham ; Electronics Division [of the Electrochemical Society]
出版情報: Pennington, New Jersey : Electrochemical Society, c1999
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-2
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38.

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editor, Peter L. F. Hemment ; assistant editors, S. Cristoloveanu ... [et al.] ; Electronics Division [of the Electrchemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1999  x, 374 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-3
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39.

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editors C. R. Abernathy ... [et al.] ; Electronics Division [of the Electrochemical Society]
出版情報: Pennington, N. J. : Electrochemical Society, c1999  viii, 264 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-4
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40.

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図書
editors, J. L. Davidson ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c1998  xii, 696 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-32
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41.

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図書
edited by C. Lawrence Anderson, George K. Celler, George A. Rozgony ; assistant editors, M. von Allmen ... [et al.]
出版情報: Princeton, N.J. : Electrochemical Society, c1980  x, 550 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 80-1
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42.

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editors, E. J. P. Santos, R. P. Ribas, J. Swart ; sponsoring division, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2004  xv, 398 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2004-03
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43.

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図書
editors, L. Cook ... [et al.] ; sponsoring divisions, Electronics and Photonics, Dielectric Science and Technology, High Temperature Materials
出版情報: Pennington, NJ : Electrochemical Society, c2006  ix, 334 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-31
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44.

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図書
edited by Kenneth E. Bean, George A. Rozgonyi ; assistant editors, F. Allen ... [et al.] ; [sponsored by] Electronics and Dielectrics and Insulation Divisions
出版情報: Pennington, NJ (10 S. Main St., Pennington 08534-2896) : Electrochemical Society, c1984  viii, 512 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 84-7
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edited by Daryl Ann Doane, David B. Fraser, Dennis W. Hess ; Electronics and Dielectrics and Insulation Divisions
出版情報: Pennington, NJ : Electrochemical Society, c1982  vi, 258 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 82-5
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46.

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edited by Conrad J. Dell'Oca, W. Murray Bullis ; assistant editors, S. Broydo ... [et al.] ; [sponsored by] Electronics and Dielectrics and Insulation Divisions
出版情報: Pennington, NJ : Electrochemical Society, c1982  x, 380 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 82-7
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47.

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editors, H. Baumgart ... [et al.] ; sponsoring division, Electronics and Photonics
出版情報: Pennington, N.J. : Electrochemical Society, c2006-  v. ; 23 cm
シリーズ名: ECS transactions ; vol. 3, no. 6, vol. 16, no. 8
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editors, K. Kondo ... [et al.] ; sponsoring divisions, Electrodeposition, Dielectric Science and Technology, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2005  ix, 406 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-08
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editors, C.L. Claeys ... [et al.] ; sponsoring division, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2004  xii, 438 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2004-05
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editors, C. L. Claeys, W. Wong-Ng, K. M. Nair
出版情報: Pennington, NJ : Electrochemical Society, c2004  x, 318 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-27
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目次情報: 続きを見る
Preface
Low Temperature Electronics
HALO Effects on 0.13 [mu]m Floating-Body Partially Depleted SOI n-MOSFETs in Low Temperature Operation / J.A. Martino ; M. A. Pavanello ; E. Simoen ; C. Claeys
Emerging Double-gate MOS Device Technology / E. Suzuki ; Y. Liu ; M. Mashara ; K. Ishii
New Insights on the Cryogenic Self-Heating of Silicon MOSFETs: Thermal resistance of the Ceramic Package / F. J. De la Hidalga-W ; F. J. Cortes-P ; M. J. Deen
High Speed Conversion of Picosecond, Millivolt Pulse Signals to CMOS Voltage Levels / T. Van Duzer ; S. R. Whiteley ; X. Meng ; Q. Liu ; N. Yoshikawa
Operation of Double Gate Graded-Channel Transistors at Low Temperatures / J. A. Martino ; T. M. Chung ; A. Kranti ; J.-P. Raskin ; D. Flandre
Electrical Properties of a Boron Doped Amorphous Silicon Bolometer Operating at Low Temperatures / A. Heredia-J ; W. A. Torres-J ; A. Jaramillo-N
Cryogenic Operation of High-Voltage IGBTs / E. K. Mueller ; O. M. Mueller ; M. J. Henessy
Ge Semiconductor Devices for Cryogenic Power Electronics--IV / R. R. Ward ; W. J. Dawson ; L. Zhu ; R.K. Kirschman ; R. L. Patterson ; J. E. Dickman ; A. Hammoud
Analog Power and Digital Circuits at Cryogenic Temperatures for Space / V.J. Kapoor ; A. J. Menezes ; A. Vijh ; R.L. Patterson
SiGe Semiconductor Devices for Cryogenic Power Electronics / R. K. Kirschman ; O. Mueller
Liquid Helium Temperature Irradiation Effects on the Operation of 0.7 [mu]m CMOS Devices for Cryogenic Space Applications / A. Mercha ; Y. Creten ; J. Putzeys ; P. Mercken ; P. De Moor ; C. Van Hoof ; A. Mohammazadeh ; R. Nickson
Silicon Based Electronics: From Physical Curiosity to Quantum Computing
Low-Temperature Performance of Ultimate Si-Based MOSFETS / J. Jomaah ; G. Ghibaudo ; S. Cristoloveanu ; A. Vandooren ; F. Dieudonne ; J. Pretet ; F. Lime ; K. Oshima ; B. Guillaumot ; F. Balestra
Room-Temperature Synthesis and Characterization of Pure and Co-Doped ZnO / A. Manivannan ; G. Glaspell ; L. Riggs ; S. Underwood ; M.S. Seehra
Low Temperature Cofired Ceramic (LTCC) Based Electronic Devices
Processing and Reliability
Process and Material Challenges Associated with the Next Generation of LTCC Based Products / E. Elvey ; V. Wang ; M. Folk ; C. Tan ; F. Barlow ; A. Elshabini
Novel LTCC Fabrication Techniques Applied to a Rolled Micro Ion Mobility Spectrometer / K. Peterson ; S. Rhode ; K. Pfeifer ; T. Turner
Design of Integrated Modules for Wireless and RF Applications Using Multi-Mix Microtechnology and Green Tape LTCC Materials / J. J. Logothetis ; D. I. Amey ; T. P. Mobley
Plating to LTCC / T. Bloom ; F. Lautzenhiser ; M. Rine
Robocast High Zirconia Content (Pb,La,Zr,Ti)O[subscript 3] Dielectrics / D. Williams ; B. Tuttle ; J. Cesarano ; M. Rodriguez
Thermal Management Using Low Temperature Cofire Ceramic (LTCC) / W. K. Jones ; M. Zampino
Thermomechanical Reliability of LTCC Solder Attachments / Chia-Yu Fu
Interfacial Reactions in LTCC Materials / L. P. Cook ; W. Wong-Ng ; J. Suh
Thermoelectric Materials
Thermoelectric Measurements / T. P. Hogan ; S. Y. Loo ; F. Guo
High Temperature Power Factor Measurement System for Thermoelectric Materials / K.-F. Hsu ; M. G. Kanatzidis
Overview of Properties of "Metallic" Na[subscript x]Co[subscript 2]O[subscript 4] Thermoelectric Materials / T. M. Tritt ; X. Tang ; E. Abbott ; J. K. Kolis
Transport and Optical Properties of the Type II Clathrates Cs[subscript 8]Na[subscript 16]Si[subscript 136] and Si[subscript 136] / M. Beekman ; G. S. Nolas ; J. Gryko ; G. A. Lamberton, Jr. ; C. A. Kendziora
Devices and Applications
Lead Free Dielectric and Magnetic Materials for Integrated Passives / R. L. Wahlers ; M. Heinz ; A. H. Feingold
MEMs in Low Temperature Co-Fired Ceramics / A. Moll ; D. Plumlee
Miniaturized Single/Multi-level Bandpass Filters for LTCC Applications / R. K. Settaluri
Authors Index
Subject Index
Preface
Low Temperature Electronics
HALO Effects on 0.13 [mu]m Floating-Body Partially Depleted SOI n-MOSFETs in Low Temperature Operation / J.A. Martino ; M. A. Pavanello ; E. Simoen ; C. Claeys
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editors, A. Goyal ... [et al.] ; sponsoring divisions, Electronics, and Dielectric Science and Technology
出版情報: Pennington, N.J. : Electrochemical Society, c2005  viii, 422 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-29
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editors, H. M. Ng, A. G. Baca ; sponsoring division, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2004  xii, 600 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2004-06
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editors, J. L. Davidson ... [et al.] ; sponsoring divisions, Electronics, Sensor, Dielectric Science and Technology
出版情報: Pennington, N.J. : Electrochemical Society, c2004  viii, 339 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2004-09
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editors, R.E. Sah ... [et al.] ; sponsoring divisions, Dielecric Scoeice and Technology, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2005  xiii, 588 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2005-01
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55.

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editors, M. Cahay ... [et al.] ; sponsoring divisions, Dielectric Science and Technology, Electronics, High Temperature Materials, and New Technologies Subcommittee
出版情報: Pennington, NJ : Electrochemical Society, c2005  xi, 662 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2004-13
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edited by John E. E. Baglin, John M. Poate
出版情報: Princeton, N.J. : Electrochemical Society, c1980  xi, 533 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 80-2
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edited by K.V. Ravi, B. O'Mara ; [sponsors] Electronics and electrothermics and Mettallurgy divisions [and] Energy Technology Group
出版情報: Pennington, N.J. : Electrochemical Society, c1980  vi, 269 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 80-5
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目次情報:
Symposium I, Electronic and Optical Properties of Polycrystalline or Impure semiconductors
Symposium II, Novel, Sillicon Growth Methods
Symposium I, Electronic and Optical Properties of Polycrystalline or Impure semiconductors
Symposium II, Novel, Sillicon Growth Methods
58.

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edited by James A. Amick ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1981  ix, 346 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 81-3
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edited by: J. Dieleman, R.G. Frieser, G. S. Mathad
出版情報: Pennington, NJ : Electrochemical Society, c1982  xi, 516 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 82-6
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edited by John P. Dismukes ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1982  xii, 531 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 82-8
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edited by Robert Bakish ; [sponsored by] Electronics, Dielectrics and Insulation, and High Temperature Materials Divisions
出版情報: Princeton, N.J. : Electrochemical Society, c1983  xii, 474 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 83-2
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edited by Vikram J. Kapoor, Herman J. Stein ; [sponsored by] Dielectrics and Insulation and Electronics Divisions
出版情報: Pennington, N.J. : Electrochemical Society, c1983  ix, 519 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 83-8
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edited by G.S. Mathad, G.C. Schwartz, G. Smolinsky ; [sponsored by] Dielectrics and Insulation and Electronics Divisions
出版情報: Pennington, N.J. : Electrochemical Society, c1983  x, 649 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 83-10
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edited by V.G. Keramidas, S. Mahajan ; [sponsored by] Electronics Division
出版情報: Pennington, NJ : Electrochemical Society, c1983  vi, 289 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 83-13
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edited by G.S. Mathad, G.C. Schwartz, G. Smolinsky
出版情報: Pennington, NJ : Electrochemical Society, c1985  x, 619 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 85-1
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edited by J.R. Lloyd ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1985  vi, 201 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 85-6
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edited by Conan K.N. Li
出版情報: Pennington, NJ : Electrochemical Society, c1986  vi, 201 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 86-14
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edited by L. B. Rothman, T. Herndon
出版情報: Pennington, NJ : Electrochemical Society, Inc., c1987  vii, 272 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 87-4
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edited by G.S. Mathad, G.C. Schwartz, R.A. Gottscho
出版情報: Pennington, NJ : Electrochemical Society, c1987  x, 754 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 87-6
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edited by Peter W. Shackle
出版情報: Pennington, NJ : Electrochemical Society, c1987  356 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 87-13
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edited by John C. Bean, Leo J. Schowalter ; assistant editors, Hiroshi Ishiwara, Erich Kasper, Evan H.C. Parker
出版情報: Pennington, NJ : Electrochemical Society, c1988  x, 619 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 88-8
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edited by J.J. Ritsko, D.J. Ehrlich, M. Kashiwagi
出版情報: Pennington, NJ : Electrochemical Society, c1988  vii, 251 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 88-10
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edited by J.R. Susko, R.W. Snyder, R.A. Susko ; [sponsored by] Dielectrics and Insulation and Electronics divisions
出版情報: Pennington, NJ : Electrochemical Society, c1988  vi, 213 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 88-17
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edited by Martin Scott, Yoichi Akasaka, Rafael Reif
出版情報: Pennington, NJ : Electrochemical Society, c1988  vi, 246 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 88-19
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図書
edited by P. Bindra, R.A. Susko ; [sponsored by] Dielectrics and Insulation, Electrodeposition, and Electronics Divisions
出版情報: Pennington, NJ : Electrochemical Society, c1989  vii, 249 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 89-3
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76.

図書

図書
edited by A.T. Macrander, T.J. Drummond
出版情報: Pennington, NJ : Electrochemical Society, c1989  viii, 395 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 89-5
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77.

図書

図書
edited by Arjun N. Saxena
出版情報: Pennington, N.J. : Electrochemical Society, c1989  vi, 133 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 89-8
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78.

図書

図書
edited by Thomas J. Shaffner, Dieter K. Schroder
出版情報: Pennington, NJ : Electrochemical Society, c1988  vi, 289 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 88-20
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79.

図書

図書
edited by G.R. Srinivasan, J. Plummer, D. Antoniadis ; [sponsored by] Electronics and Dielectrics and Insulation Divisions
出版情報: Pennington, NJ : Electrochemical Society, c1988  vii, 303 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 88-16
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80.

図書

図書
edited by Harzara S. Rathore, Geraldine C. Schwartz, Robin A. Susko ; [sponsored by] Dielectrics and Insulation and Electronics divisions
出版情報: Pennington, NJ : Electrochemical Society, c1989  viii, 495 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 89-6
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81.

図書

図書
edited by Joseph B. Anthony ; assistant editors, Mihir Parikh, Vaughn Akins, Robert Miller
出版情報: Pennington, NJ : Electrochemical Society, c1989  vi, 312 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 89-2
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82.

図書

図書
edited by Joseph B. Anthony ; assistant editors, Mihir Parikh, Vaughn Akins, Robert Miller
出版情報: Pennington, NJ : Electrochemical Society, c1988  viii, 484 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 88-13
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83.

図書

図書
edited by Vik J. Kapoor
出版情報: Pennington, NJ : Electrochemical Society, c1988  vii, 332 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 88-15
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84.

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図書
editor, L. Mendicino ; assistant editor, L. Simpson
出版情報: Pennington, NJ : Electrochemical Society, c1999  viii, 246 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-8
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85.

図書

図書
editors, K. B. Sundaram ... [et al.] ; Dielectric Science and Technology and Electronics Divisions, and High Temperature Materials Divisions [of the Electrochemical Society]
出版情報: Pennington, New Jersey : Electrochemical Society, c1999  xi, 284 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-6
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86.

図書

図書
editors, P. C. Andricacos ...[et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c1999  ix, 400 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-9
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目次情報: 続きを見る
Superconformal Electrodeposition of Copper / T.P. Moffat ; J.E. Bonevich ; W.H. Huber ; A. Stanishevshky ; D.R. Kelly ; G.R. Stafford ; D. Josell
Magnetic Nanowire Arrays Obtained by Electrodeposition In Ordered Alumina Templates / K. Nielsch ; F. Muller ; G. Liu ; R.B. Wehrspohn ; U. Gosele ; S.F. Fischer ; H. Kronmuller
Mapping Alloy Electrodeposition Conditions Onto Deposit Characteristics for Microelectrode Arrays / Jason Thomas ; Daniel A. Buttry ; John Pope ; Donald Montgomery
Experimental Conditions for CdSe Layer - by - Layer Growth / F. Loglio ; M. Innocenti ; G. Pezzatini ; F. Forni ; M.L. Foresti
Potential Dependence of InAs Formation by ECALE at Room Temperature / Raman Vaidyanathan ; Travis L. Wade ; Uwe Happek ; John L. Stickney
A Study of Electrochemically Deposited Copper on PVD Copper and TiN Using a Cu-EDTA Complexed Bath / Lyndon Graham ; Christoph Steinbruchel ; David J. Duquette
Analysis of Copper Plating Baths - New Developments / Edward Kaiser ; Beverly Newton ; Robert Joyce ; Jeffrey Rohrer ; Kshama B. Jirage ; Chin Chang Cheng ; Richard Hurtubise
Role of Damascene Via Filling Additives - Morphology Evolution / Kazuo Kondo ; Katsuhiko Hayashi ; Zennosuke Tanaka ; Norihiro Yamakawa
Copper Electrodeposition for On - Chip Interconnection - The Role Of Different Additives / P.L. Cavallotti ; R. Vallauri ; A. Vicenzo
Monitoring of SPS - Based Additives in Cu Plating / Jean Horkans ; John Dukovic
Trends in Properties of Electroplated Cu with Plating Conditions and Chemistry / Cyril Cabral, Jr. ; Kenneth P. Rodbell ; Christopher Parks ; Michael A. Gribelyuk ; Sandra Malhotra ; Panayotis C. Andricacos
Contact Resistance in Copper Plating on Wafers - Analysis and Design Criteria / Yezdi Dordi ; Uziel Landau ; Jayant Lakshmikanthan ; Joe Stevens ; Peter Hey ; Andrew Lipin
Shape Evolution of Copper Electrodeposition: Numerical and Experimental Investigation / M. Georgiadou ; D. Papapanayiotou ; D. Veyret ; R.L. Sani ; R.C. Alkire
Model of Superfilling in Damascene Electroplating: Comparison of Experimental Feature Filling with Model Predictions / H. Deligianni ; J. Horkans ; K. Kwietniak ; J.O. Dukovic ; P.C. Andricacos ; S. Boettcher ; S.-C. Seo ; P. Locke ; A. Simon ; S. Seymour ; S. Malhotra
Feature Scale Simulation of Copper Deposition for IC Interconnection / Bang-Hao Wu ; Yung-Yun Wang ; Chi-Chao Wan
The Electrochemistry of the Active State of Copper / L.D. Burke ; J.A. Collins ; M.A. Murphy ; A.M. O'Connell
The Effects of Process Conditions on the Residual Stress and Composition of Electroless Nickel Films for MEMS / Seung Hwan Yi ; F.J. Von Preissig ; Euk Sok Kim
Novel Porous Silicon Formation Technology Using Internal Current Generation / A. Splinter ; J. Sturmann ; W. Benecke
Surface in Fluoride Solution Studied by Attenyated Total Reflection Fourier Transform Infrared and X-Ray Photoelectron Spectroscopy / Shen Ye ; Taro Ishihara ; Kohei Uosaki
Cathodic Reactions in Copper Chemical Mechanical Polishing: The Cu/Fe[superscript 3+] and Cu/H[subscript 2]O[subscript 2] Systems / Ashraf T. Al-Hinai ; Kwadwo Osseo-Asare
Novel STI CMP Process Using Highly Selective Ceria Slurry with Thin Nitride Stopper / Jung-Yup Kim ; Jung Hun Park ; Bo Un Yoon ; Sangrok Hah ; Joo-Tae Moon
Oxidation and Dissolution Characteristics of Tungsten: Application To Chemical Mechanical Polishing / M. Anik ; K. Osseo-Asare
Electrodeposition of Copper Onto Silicon Surfaces from Copper Sulfate Solutions / Chunxin Ji ; Gerko Oskam ; Peter C. Searson
Author Index
Subject Index
Superconformal Electrodeposition of Copper / T.P. Moffat ; J.E. Bonevich ; W.H. Huber ; A. Stanishevshky ; D.R. Kelly ; G.R. Stafford ; D. Josell
Magnetic Nanowire Arrays Obtained by Electrodeposition In Ordered Alumina Templates / K. Nielsch ; F. Muller ; G. Liu ; R.B. Wehrspohn ; U. Gosele ; S.F. Fischer ; H. Kronmuller
Mapping Alloy Electrodeposition Conditions Onto Deposit Characteristics for Microelectrode Arrays / Jason Thomas ; Daniel A. Buttry ; John Pope ; Donald Montgomery
87.

図書

図書
editors, M. Meyyappan, D.J. Economou, S.W. Butler ; [sponsored by] Dielectric Science and Technology and Electronics Divisions
出版情報: Pennington, NJ : Electrochemical Society, c1997  ix, 347 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-9
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88.

図書

図書
editors M. Jamal Deen ... [et al.] ; Dielectric Science and Technology and Electronics Divisions [of the Electrochemical Society]
出版情報: Pennington, New Jersey : Electrochemical Society, c1997  xiii, 588 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-10
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89.

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図書
editors, M. Cahay ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1997  x, 494 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-11
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90.

図書

図書
editors, P. Rai-Choudhury ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1997  ix, 478 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-12
Proceedings / SPIE -- the International Society for Optical Engineering ; v. 3322
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91.

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図書
editor, S.N.G. Chu ... [et al.] ; Electronics Division [of the Electrochemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1997  x, 390 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-21
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92.

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図書
editors, Bernd O. Kolbesen ... [et al.] ; Electronics Division [of the Electrochemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1997  x, 518 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-22
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93.

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図書
editor, Sorin Cristoloveanu ; assistant editors, Peter L.F. Hemment .. [et al.] ; Electronics Division [of the Electrchemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1997  x, 414 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-23
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94.

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図書
editors, Mark D. Allendorf, Claude Bernard
出版情報: Pennington, NJ : Electrochemical Society, c1997  xxii, 1652 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-25
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95.

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図書
editors, G.S. Mathad, M. Meyyappan, M. Engelhardt ; Dielectric Science & Technology, Electronics, and Electrodeposition Divisions
出版情報: Pennington, NJ : Electrochemical Society, c1998  ix, 370 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-30
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96.

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図書
editor, Hazara S. Rathore ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c1998  viii, 276 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-31
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97.

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図書
edited by Sheng S. Li, H. C. Liu, M.Z. Tidrow
出版情報: Pennington, NJ : Electrochemical Society, c1997  vii, 280 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-33
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98.

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図書
editors, C.R. Abernathy ... [et al.] ; Dielectric Science & Technology, Electronics, and High Temperature Material[s] Divisions of the Electrochemical Society [and] European III-V Nitride Community
出版情報: Pennington, NJ : Electrochemical Society, c1998  viii, 294 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-34
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99.

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図書
editors, Jerzy Ruzyllo ... [et al.] ; Electronics Division [of the Electrochemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1998  xiii, 650 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-35
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100.

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図書
editors, Ulrich Gösele ... [et al.] ; Electronics Division [of the Electrochemical Society]
出版情報: Pennington, NJ : Electrochemical Society, c1998  xi, 618 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 97-36
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