close
1.

図書
図書
1. Semiconducting II-VI, IV-VI, and V-VI compounds
N. Kh. Abrikosov ... [et al.] ; translated from Russian by Albin Tybulewicz
出版情報: New York : Plenum Press, 1969  viii, 252 p. ; 24 cm
シリーズ名: Monographs in semiconductor physics ; v. 3
所蔵情報: loading…
2.

図書
図書
2. Electron-hole droplets in semiconductors
volume editors, C.D. Jeffries, L.V. Keldysh
出版情報: Amsterdam ; Tokyo : North-Holland , New York, N.Y. : Sole distributors for the USA and Canada, Elsevier Science Pub. Co., 1983  xxxvii, 656 p. ; 24 cm
シリーズ名: Modern problems in condensed matter sciences ; v. 6
所蔵情報: loading…
3.

図書
図書
3. Device physics
volume editor, Cyril Hilsum
出版情報: Amsterdam ; New York : North-Holland Pub. Co. : sole distributors for the USA and Canada, Elsevier North-Holland, c1981  xv, 970 p. ; 25 cm
シリーズ名: Handbook on semiconductors / series editor, T.S. Moss ; v. 4
所蔵情報: loading…
4.

図書
図書
4. Band theory and transport properties
volume editor, William Paul
出版情報: Amsterdam ; New York : North-Holland Pub. Co., 1982 , New York, N.Y. : Sole distributors for the U.S.A. and Canada, Elsevier Science Pub. Co., 1982  xvii, 879 p. ; 25 cm
シリーズ名: Handbook on semiconductors / series editor, T.S. Moss ; v. 1
所蔵情報: loading…
5.

図書

東工大
目次DB
図書
東工大
目次DB
5. Near-field nano/atom optics and technology
M. Ohtsu, ed
出版情報: Tokyo ; New York : Springer-Verlag, 1998  xiv, 302 p. ; 25 cm
所蔵情報: loading…
目次情報: 続きを見る
Preface
Contents
List of Contributors
1. Introduction 1
   1.1 Near-Field Optics and Related Technologies 1
   1.2 History of Near-Field Optics and Related Technologies 2
   1.3 Basic Features of an Optical Near Field 3
   1.3.1 Optically “Near” System 3
   1.3.2 Effective Field and Evanescent Field 5
   1.3.3 Near-Field Detection of Effective Fields 6
   1.3.4 Role of a Probe Tip 8
   1.4 Building Blocks of Near-Field Optical Systems 9
   1.5 Comments on the Theory of Near-Field Optics 11
   1.6 Composition of This Book 13
   References 13
2. Principles of the Probe 15
   2.1 Basic Probe 15
   2.1.1 Optical Fiber Probe for the Near-Field Optical Microscope 15
   2.1.2 Principle of the Imaging Mechanism: Dipole-Dipole Interaction 16
   2.1.3 Resolution 17
   2.1.4 Contrast 19
   2.1.5 Sensitivity 24
   2.2 Functional Probe: New Contrast Mechanisms 25
   2.2.1 Signal Conversion by Functional Probes 25
   2.2.2 Absorption and Emission: Radiative and Nonradiative Energy Transfer 26
   2.2.3 Resonance, Nonlinearity, and Other Mechanisms 27
   References 29
3. Probe Fabrication 31
   3.1 Introduction 31
   3.2 Selective Etching of a Silica Fiber Composed of a Core and Cladding 34
   3.2.1 Geometrical Model of Selective Etching 34
   3.2.2 Pure Silica Fiber with a Fluorine Doped Cladding 35
   3.2.3 GeO2 Doped Fiber 36
   3.2.4 Tapered Fibers for Optical Transmission Systems 37
   3.3 Selective Etching of a Dispersion Compensating Fiber 38
   3.3.1 Shoulder-Shaped Probe 38
   3.3.1.1 Shoulder-Shaped Probe with a Controlled Cladding Diameter 38
   3.3.1.2 Shoulder-Shaped Probe with a Nanometric Flattened Apex 40
   3.3.1.3 Double-Tapered Probe 42
   3.3.2 Pencil-Shaped Probe 45
   3.3.2.1 Pencil-Shaped Probe with an Ultra-Small Cone Angle 45
   3.3.2.2 Pencil-Shaped Probe with a Nanometric Apex Diameter 47
   3.4 Protrusion-Type Probe 51
   3.4.1 Selective Resin Coating Method 52
   3.4.2 Chemical Polishing Method 54
   3.5 Hybrid Selective Etching of a Double-Cladding Fiber 56
   3.5.1 Triple-Tapered Probe 56
   3.5.2 Geometrical Model of Selective Etching of a Double-Cladding Fiber 57
   3.5.3 Application-Oriented Probes: Pencil-Shaped Probe and Triple-Tapered Probe 59
   3.6 Probe for Ultraviolet NOM Applications 62
   3.6.1 UV Single-Tapered Probe 62
   3.6.2 UV Triple-Tapered Probe 65
   3.6.2.1 Advanced Method Based on Hybrid Selective Etching of a Double Core Fiber 65
   3.6.2.2 Geometrical Model 67
   References 68
4. High-Throughput Probes 71
   4.1 Introduction 71
   4.2 Excitation of the HE-Plasmon Mode 73
   4.2.1 Mode Analysis 73
   4.2.2 Edged Probes for Exciting the HE-Plasmon Mode 74
   4.3 Multiple-Tapered Probes 77
   4.3.1 Double-Tapered Probe 77
   4.3.2 Triple-Tapered Probe 82
   References 87
5. Functional Probes 89
   5.1 Introduction 89
   5.2 Methods of Fixation 90
   5.3 Selecting a Functional Material 92
   5.4 Probe Characteristics and Applications 93
   5.4.1 Dye-Fixed Probes 93
   5.4.2 Chemical Sensing Probes 94
   5.5 Future Directions 98
   References 99
6. Instrumentation of Near-Field Optical Microscopy 101
   6.1 Operation Modes of NOM 101
   6.1.1 c-Mode NOM 102
   6.1.2 i-Mode NOM 104
   6.1.3 Comparative Features of Modes of NOM 105
   6.2 Scanning Control Modes 107
   6.2.1 Constant-height Mode 107
   6.2.2 Constant-Distance Mode 108
   6.2.2.1 Shear-force Feed Back 108
   6.2.2.2 Optical Near-Field Intensity Feedback 111
   References 114
7. Basic Features of Optical Near-Field and Imaging 117
   7.1 Resolution Characteristics 117
   7.1.1 Longitudinal Resolution 117
   7.1.2 Lateral Resolution 120
   7.2 Factors Influencing Resolution 123
   7.2.1 Influence of Probe Parameters 124
   7.2.2 Dependence on Sample-Probe Separation 124
   7.3 Polarization Dependence 125
   7.3.1 Influence of Polarization on the Images of an Ultrasmooth Sapphire Surface 126
   7.3.2 Influence of Polarization on the Images of LiNbO3 Nanocrystals 130
   References 130
8. Imaging Biological Specimens 133
   8.1 Introduction 133
   8.2 Observation of Flagellar Filaments by c-Mode NOM 133
   8.2.1 Imaging in Air 134
   8.2.2 Imaging in Water 136
   8.3 Observation of Subcellular Structures of Neurons by i-Mode NOM 136
   8.3.1 Imaging in Air Under Shear-Force Feedback 137
   8.3.1.1 Imaging of Neurons Without Dye Labeling 138
   8.3.1.2 Imaging of Neurons Labeled with Toluidine Blue 139
   8.3.2 Imaging in Water Under Optical Near-Field Intensity Feedback 140
   8.3.2.1 Imaging in Air 140
   8.3.2.2 Imaging in PBS 142
   8.4 Imaging of Microtubules by c-Mode NOM 144
   8.5 Imaging of Fluorescent-Labeled Biospecimens 145
   8.6 Imaging DNA Molecules by Optical Near-Field Intensity Feedback 148
   References 151
9. Diagnosing Semiconductor Nano-Materials and Devices 153
   9.1 Fundamental Aspects of Near-Field Study of Semiconductors 153
   9.1.1 Near-Field Spectroscopy of Semiconductors 153
   9.1.2 Optical Near Field Generated by a Small Aperture and Its Interaction with Semiconductors 154
   9.1.3 Operation in Illumination-Collection Hybrid Mode 156
   9.2 Multidiagnostics of Lateral p-n Junctions 158
   9.2.1 Sample and Experimental Set-up 158
   9.2.2 Spatially Resolved Photoluminescence Spectroscopy 159
   9.2.3 Two-Dimensional Mapping of Photoluminescence Intensity 163
   9.2.4 Collection-Mode Imaging of Electroluminescence 163
   9.2.5 Multiwavelength Photocurrent Spectroscopy 164
   9.3 Low-Temperature Single Quantum Dot Spectroscopy 169
   9.3.1 Near-Field single quantum dot spectroscopy 169
   9.3.2 Low-Temperature NOM 170
   9.3.3 Sample and Experimental Set-up 171
   9.3.4 Fundamental Performance of the System 172
   9.3.5 Physical Insight of Single Quantum Dot Photoluminescence 174
   9.3.6 Observation of Other Types of Quantum Dots 176
   9.4 Ultraviolet Spectroscopy of Polysilane Molecules 178
   9.4.1 Polysilanes 178
   9.4.2 Near-Field Ultraviolet Spectroscopy 180
   9.4.3 Imaging and Spectroscopy of Polysilane Aggregates 181
   9.5 Raman Spectroscopy of Semiconductors 183
   9.5.1 Near-Field Raman Spectroscopy 183
   9.5.2 Raman Imaging and Spectroscopy of Polydiacetylene and Si 184
   9.6 Diagnostics of A1 Stripes in an Integrated Circuit 186
   9.6.1 Principle of Detection 186
   9.6.2 Heating with a Metallized Probe 187
   9.6.3 Heating by an Apertured Probe 188
   References 189
10. Toward Nano-Photonic Devices 193
   10.1 Introduction 193
   10.2 Use of Surface Plasmons 193
   10.2.1 Principles of Surface Plasmons 193
   10.2.2 Observation of Surface Plasmons 195
   10.2.3 Toward Two-Dimensional Devices 197
   10.2.4 Toward Three-Dimensional Devices 200
   10.2.5 A Protruded Metallized Probe with an Aperture 204
   10.3 Application to High-Density Optical Memory 207
   10.3.1 Problems to Be Solved 207
   10.3.2 Approaches to Solving the Problems 208
   10.3.2.1 Structure of the Read-Out Head 208
   10.3.2.2 Storage Probe Array 210
   10.3.2.3 Track-less Read-out 210
   10.3.3 Fabrication of a Two-Dimensional Planar Probe Array 212
   References 214
11. Near-Field Optical Atom Manipulation: Toward Atom Photonics 217
   11.1 Introduction 217
   11.1.1 Control of Gaseous Atoms: From Far Field to Near Field 217
   11.1.2 Dipole Force 219
   11.1.3 Atomic Quantum Sheets: Atom Reflection Using a Planar Optical Near Field 220
   11.1.4 Atomic Quantum Wires: Atom Guidance Using a Cylindrical Optical Near Field 221
   11.1.5 Atomic Quantum Dots: Atom Manipulation Using a Localized Optical Near Field 222
   11.2 Cylindrical Optical Near Field for Atomic Quantum Wires 224
   11.2.1 Exact Light-Field Modes in Hollow Optical Fibers 224
   11.2.2 Approximate Light-Field Modes in Hollow Optical Fibers 227
   11.2.3 Field Intensity of the LP Modes 229
   11.3 Atomic Quantum Wires 230
   11.3.1 Near-Field Optical Potential 230
   11.3.2 Laser Spectroscopy of Guided Atoms with Two-Step Photoionization 231
   11.3.3 Observation of Cavity QED Effects in a Dielectric Cylinder 235
   11.3.4 Atomic Quantum Wires with a Light Coupled Sideways 239
   11.4 Optically Controlled Atomic Deposition 240
   11.4.1 Spatial Distribution of Guided Atoms 241
   11.4.2 Precise Control of Deposition Rate 243
   11.4.3 In-line Spatial Isotope Separation 244
   11.5 Near-Field Optical Atomic Funnels 246
   11.5.1 Atomic Funnel with Atomic Quantum Sheet 247
   11.5.2 Sisyphus Cooling Induced by Optical Near Field 248
   11.5.3 Monte Carlo Simulations 251
   11.6 Atomic Quantum Dots 254
   11.6.1 Phenomenological Approach to the Interaction Between Atoms and the Localized Optical Near Field 254
   11.6.2 Atom Deflection 256
   11.6.3 Atom Trap with a Sharpened Optical Fiber 258
   11.6.4 Three-Dimensional Atom Trap 259
   11.7 Future Outlook 261
   References 263
12. Related Theories 267
   12.1 Comparison of Theoretical Approaches 267
   12.2 Semi-microscopic and Microscopic Approaches 270
   12.2.1 Basic Equations 270
   12.2.2 Example of an Evanescent Field 272
   12.2.3 Direct and Indirect Field Propagators 273
   12.2.4 Electric Susceptibility of Matter 275
   12.3 Numerical Examples 277
   12.3.1 Weak vs. Strong Coupling 277
   12.3.2 Near-Field- and Far-Field-Propagating Signals 280
   12.3.3 Scanning Methods 282
   12.3.4 Possibility of Spin-Polarization Detection 284
   12.4 Effective Field and Massive Virtual Photon Model 288
   12.5 Future Direction 290
   References 290
Index 295
Preface
Contents
List of Contributors
6.

図書
図書
6. Semiconductor optoelectronic devices. Prentice Hall International ed.,2nd ed
Pallab Bhattacharya
出版情報: Upper Saddle River, NJ : Prentice Hall, c1997  xxv, 613 p. ; 25 cm
所蔵情報: loading…
7.

図書
図書
7. Introduction to solid state electronics
Franklin F.Y. Wang
出版情報: Amsterdam ; New York : North-Holland Pub. Co. , New York : sole distributors for the U.S.A. and Canada, Elsevier North-Holland, 1980  xii, 266 p. ; 24 cm
所蔵情報: loading…
8.

図書
図書
8. The quantum dot : a journey into the future of microelectronics
Richard Turton
出版情報: New York : Oxford University Press, 1995  x, 211 p. ; 24 cm
所蔵情報: loading…
9.

図書
図書
9. Semiconductor devices: BJTS, JFETS, MOSFETS, and integrated circuits
[by] Rajendra P. Nanavati
出版情報: New York : Intext Educational Publishers, [1975]  xxvii, 514 p ; 24 cm
シリーズ名: The Intext Educational Publishers series in circuits, systems, communications, and computers
所蔵情報: loading…
10.

図書
図書
10. Electrochemistry at semiconductor and oxidized metal electrodes
S. Roy Morrison
出版情報: New York ; London : Plenum Press, c1980  xiv, 401 p. ; 24 cm
所蔵情報: loading…
11.

図書
図書
11. Hot-electron transport in semiconductors (: U.S ; : Germany)
edited by L. Reggiani ; with contributions by M. Asche ... [et al.]
出版情報: Berlin ; New York : Springer-Verlag, c1985  xvi, 275 p. ; 24 cm
シリーズ名: Topics in applied physics ; v. 58
所蔵情報: loading…
12.

図書
図書
12. Microwave semiconductor circuit design
by W. Alan Davis
出版情報: New York : Van Nostrand Reinhold Co., c1984  xii, 415 p. ; 24 cm
所蔵情報: loading…
13.

図書
図書
13. The electrochemistry of semiconductors. [U.S. ed.]
ed. by P.J. Holmes
出版情報: London ; New York : Academic Press, 1962  xi, 396 p. ; 24 cm
シリーズ名: Physical chemistry : a series of monographs / edited by Eric Hutchinson ; v. 10
所蔵情報: loading…
14.

図書
図書
14. Semiconductor electronics
Paul D. Ankrum
出版情報: Englewood Cliffs, N.J. : Prentice-Hall, c1971  x, 548 p ; 24 cm
シリーズ名: Prentice-Hall electrical engineering series
Solid state physical electronics series
所蔵情報: loading…
15.

図書
図書
15. Introduction to the quantum theory of semiconductors (:)
[by] Marvin M. Cohen
出版情報: New York : Gordon and Breach, [1972]  ix, 299 p. ; 24 cm
所蔵情報: loading…
16.

図書
図書
16. Semiconductor plasma instabilities, including Gunn-effect and avalanche oscillations
Hans Hartnagel
出版情報: London : Heinemann Educational, 1969  xix, 206 p ; 24 cm
所蔵情報: loading…
17.

図書
図書
17. Deep impurities in semiconductors
A. G. Milnes
出版情報: New York : Wiley, c1973  xviii, 526 p. ; 23 cm
所蔵情報: loading…
18.

図書
図書
18. Current injection in solids
[by] Murray A. Lampert and Peter Mark
出版情報: New York : Academic Press, 1970  xii, 351 p. ; 24 cm
シリーズ名: Electrical science
所蔵情報: loading…
19.

図書
図書
19. Microwave devices : device circuit interactions
edited by M. J. Howes, D. V. Morgan
出版情報: London ; New York : Wiley, c1976  402 p. ; 24 cm
シリーズ名: The Wiley series in solid state devices and circuits
所蔵情報: loading…
20.

図書
図書
20. Photoelectric effects in semiconductors
by Solomon Meerovich Ryvkin ; authorized translation from the Russian by A. Tybulewicz
出版情報: New York : Consultants Bureau, 1964  xv, 402 p. ; 26 cm
所蔵情報: loading…
21.

図書
図書
21. Organic semiconducting polymers
edited by J. E. Katon
出版情報: New York : M. Dekker, 1968  x, 315 p ; 24 cm
シリーズ名: Monographs in macromolecular chemistry
所蔵情報: loading…
22.

図書
図書
22. Surface physics of phosphors and semiconductors
edited by C.G. Scott and C.E. Reed
出版情報: London ; New York : Academic Press, 1975  xiv, 644 p. ; 24 cm
所蔵情報: loading…
23.

図書
図書
23. Electrical properties of semiconductor surfaces. [1st ed.]
by Daniel R. Frankl
出版情報: Oxford ; New York : Pergamon Press, [1967]  xv, 310 p. ; 23 cm
シリーズ名: International series of monographs on semiconductors ; v. 7
所蔵情報: loading…
24.

図書
図書
24. Microwave semiconductor devices and their circuit applications
Edited by H. A. Watson ; Contributors: M. R. Barber ... [et al.]
出版情報: New York : McGraw-Hill, c1969  xv, 617 p. ; 23 cm
所蔵情報: loading…
25.

図書
図書
25. Semiconductor opto-electronics
T.S. Moss, G.J. Burrell, B. Ellis
出版情報: London : Butterworths, 1973  xii, 441 p. ; 23 cm
所蔵情報: loading…
26.

図書
図書
26. Semiconductor electronics
[by] James F. Gibbons
出版情報: New York : McGraw-Hill , Tokyo : Kōgakusha, c1966  xiv, 837 p. ; 21 cm
所蔵情報: loading…
27.

図書
図書
27. Microwave semiconductor devices : fundamentals and radiation effects
R.J. Chaffin
出版情報: New York : Wiley, c1973  x, 387 p. ; 23 cm
所蔵情報: loading…
28.

図書
図書
28. Semiconductor devices : physics and technology (: pbk)
S.M. Sze
出版情報: New York : Wiley, c1985  xi, 523 p. ; 25 cm
所蔵情報: loading…
目次情報: 続きを見る
Energy Bands and Carrier Concentration
Carrier Transport Phenomena
p-n Junction
Bipolar Devices
Unipolar Devices
Microwave Devices
Photonic Devices
Crystal Growth and Epitaxy
Oxidation and Film Deposition
Diffusion and Ion Implantation
Lithography and Etching
Integrated Devices
Appendices
Index
Energy Bands and Carrier Concentration
Carrier Transport Phenomena
p-n Junction
29.

図書
図書
29. Basic properties of semiconductors. Completely revised and enlarged edition (: series)
volume editor, P.T. Landsberg
出版情報: Amsterdam ; New York : North-Holland, c1992  xiv, 1204 p. ; 25 cm
シリーズ名: Handbook on semiconductors ; v. 1
所蔵情報: loading…
目次情報: 続きを見る
Contemporary topics in band theory / M. Rasolt1：
Chemical models of energy bands / J.C. Phillips2：
Ab initio pseudopotentials and the structural properties of semiconductors / J.R. Chelikowsky ; M.L. Cohen3：
Deep and shallow impurities in semiconductors: Theoretical / M. Lannoo4：
Impurities in semiconductors: Experimental / J.M. Baranowski ; M. Grynberg5：
Semiconductor statistics / P.T. Landsberg ; O. Engstrwm6：
Surfaces and interfaces: Atomic-scale structure, band bending and band offsets / L.J. Brillson7：
Nonlinear dynamics, phase transitions and chaos in semiconductors / E. Schwll8：
Electron-hole liquid in semiconductors / A.A. Rogachev9：
Dynamics and classical transport of carriers in semiconductors / L.M. Roth10：
Conjugated polymer semiconductors: An introduction / E.M. Conwell ; H.A. Mizes11：
Electron tunneling in semiconductors / P.J. Price12：
Quantum confinement and scattering processes / B.K. Ridley13：
Classical transport and thermoelectric effects in low-dimensional and mesoscopic semiconductor structures / B.L. Gallagher ; P.N. Butcher14：
Coherence in III-V semiconductor superlattices / P. Voisin ; G. Bastard15：
From ballistic transport to localization / S.E. Ulloa ; A. MacKinnon ; E. Casta1o ; G. Kirczenow16：
The quantum Hall effect / T. Chakraborty17：
Hot-electron transport phenomena / D.K. Ferry18：
Fundamental aspects of quantum transport theory / J.R. Barker19：
Author index
Subject index
Contemporary topics in band theory / M. Rasolt1：
Chemical models of energy bands / J.C. Phillips2：
Ab initio pseudopotentials and the structural properties of semiconductors / J.R. Chelikowsky ; M.L. Cohen3：
30.

図書
図書
30. Integrated circuits and semiconductor devices : theory and application. 2nd ed.
[by] Gordon J. Deboo [and] Clifford N. Burrous
出版情報: Tokyo : McGraw-Hill Kogakusha, c1977  xii, 479 p ; 21 cm
シリーズ名: International student edition
所蔵情報: loading…
31.

図書
図書
31. Trace analysis of semiconductor materials
edited by J. Paul Cali
出版情報: Oxford ; New York : Pergamon Press ; [distributed in the Western Hemisphere by Macmillan, New York], 1964  ix, 282 p ; 24 cm
シリーズ名: International series of monographs on analytical chemistry / General editors, R. Belcher and L. Gordon ; v. 11
所蔵情報: loading…
32.

図書
図書
32. Thermomagnetic effects in semiconductors
Translated by A. Tybulewicz. Edited by H.J. Goldsmid
出版情報: London : Infosearch, [1962]  viii, 333 p ; 24 cm
所蔵情報: loading…
33.

図書
図書
33. Semiconductor physics and devices : basic principles. 3rd ed. (: ISE)
Donald A. Neamen
出版情報: Boston : McGraw-Hill, c2003  xxiv, 746 p. ; 24 cm
所蔵情報: loading…
目次情報: 続きを見る
Preface
The Crystal Structure of Solids / Chapter 1：
Semiconductor Materials / 1.1：
Types of Solids / 1.2：
Space Lattices / 1.3：
Atomic Bonding / 1.4：
Imperfections and Impurities in Solids / 1.5：
Growth of Semiconductor Materials / 1.6：
Summary / 1.7：
Introduction to Quantum Mechanics / Chapter 2：
Principles of Quantum Mechanics / 2.1：
Schrodinger's Wave Equation / 2.2：
Applications of Schrodinger's Wave Equation / 2.3：
Extensions of the Wave Theory to Atoms / 2.4：
Introduction to the Quantum Theory of Solids / 2.5：
Allowed and Forbidden Energy Bands / 3.1：
Electrical Conduction in Solids / 3.2：
Extension to Three Dimensions / 3.3：
Density of States Function / 3.4：
Statistical Mechanics / 3.5：
The Semiconductor in Equilibrium / 3.6：
Charge Carriers in Semiconductors / 4.1：
Dopant Atoms and Energy Levels / 4.2：
The Extrinsic Semiconductor / 4.3：
Statistics of Donors and Acceptors / 4.4：
Charge Neutrality / 4.5：
Position of Fermi Energy Level / 4.6：
Carrier Transport Phenomena / 4.7：
Carrier Drift / 5.1：
Carrier Diffusion / 5.2：
Graded Impurity Distribution / 5.3：
The Hall Effect / 5.4：
Nonequilibrium Excess Carriers in Semiconductors / 5.5：
Carrier Generation and Recombination / 6.1：
Characteristics of Excess Carriers / 6.2：
Ambipolar Transport / 6.3：
Quasi-Fermi Energy Levels / 6.4：
Excess-Carrier Lifetime / 6.5：
Surface Effects / 6.6：
The pn Junction / 6.7：
Basic Structure of the pn Junction / 7.1：
Zero Applied Bias / 7.2：
Reverse Applied Bias / 7.3：
Nonuniformly Doped Junctions / 7.4：
The pn Junction Diode / 7.5：
pn Junction Current / 8.1：
Small-Signal Model of the pn Junction / 8.2：
Generation-Recombination Currents / 8.3：
Junction Breakdown / 8.4：
Charge Storage and Diode Transients / 8.5：
The Tunnel Diode / 8.6：
Metal-Semiconductor and Semiconductor Heterojunctions / 8.7：
The Schottky Barrier Diode / 9.1：
Metal-Semiconductor Ohmic Contacts / 9.2：
Heterojunctions / 9.3：
The Bipolar Transistor / 9.4：
The Bipolar Transistor Action / 10.1：
Minority Carrier Distribution / 10.2：
Low-Frequency Common-Base Current Gain / 10.3：
Nonideal Effects / 10.4：
Equivalent Circuit Models / 10.5：
Frequency Limitations / 10.6：
Large-Signal Switching / 10.7：
Other Bipolar Transistor Structures / 10.8：
Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor / 10.9：
The Two-Terminal MOS Structure / 11.1：
Capacitance-Voltage Characteristics / 11.2：
The Basic MOSFET Operation / 11.3：
The CMOS Technology / 11.4：
Metal-Oxide-Semiconductor Field-Effect Transistor: Additional Concepts / 11.6：
MOSFET Scaling / 12.1：
Threshold Voltage Modifications / 12.3：
Additional Electrical Characteristics / 12.4：
Radiation and Hot-Electron Effects / 12.5：
The Junction Field-Effect Transistor / 12.6：
JFET Concepts / 13.1：
The Device Characteristics / 13.2：
Equivalent Circuit and Frequency Limitations / 13.3：
High Electron Mobility Transistor / 13.5：
Optical Devices / 13.6：
Optical Absorption / 14.1：
Solar Cells / 14.2：
Photodetectors / 14.3：
Photoluminescence and Electroluminescence / 14.4：
Light Emitting Diodes / 14.5：
Laser Diodes / 14.6：
Semiconductor Power Devices / 14.7：
Power Bipolar Transistors / 15.1：
Power MOSFETs / 15.2：
Heat Sinks and Junction Temperature / 15.3：
The Thyristor / 15.4：
Selected List of Symbols / 15.5：
System of Units, Conversion Factors, and General Constants / Appendix B：
The Periodic Table / Appendix C：
The Error Function / Appendix D：
"Derivation" of Schrodinger's Wave Equation / Appendix E：
Unit of Energy--The Electron-Volt / Appendix F：
Answers to Selected Problems / Appendix G：
Index
Preface
The Crystal Structure of Solids / Chapter 1：
Semiconductor Materials / 1.1：
34.

図書
図書
34. Spin-orbit coupling effects in two-dimensional electron and hole systems (: softcover)
Roland Winkler
出版情報: Berlin ; Tokyo : Springer, c2003  xii, 228 p. ; 24 cm
シリーズ名: Springer tracts in modern physics : Ergebnisse der exakten Naturwissenschaften / editor, G. Höhler ; v. 191 . Solid-state physics / editors, Andrei Ruckenstein, Peter Wölfle
所蔵情報: loading…
35.

図書
図書
35. Semiconductor optoelectronic devices : introduction to physics and simulation
Joachim Piprek
出版情報: Amsterdam ; Tokyo : Academic Press, c2003  xv, 279 p. ; 24 cm
所蔵情報: loading…
36.

図書
図書
36. Fundamentals of carrier transport. 2nd ed (: pbk)
Mark Lundstrom
出版情報: Cambridge : Cambridge University Press, 2000  xix, 418 p. ; 26 cm
所蔵情報: loading…
目次情報: 続きを見る
The quantum foundation / 1：
Carrier scattering / 2：
The Boltzmann transport equation / 3：
Low-field transport / 4：
Balance equations / 5：
Monte Carlo simulation / 6：
High-field transport in bulk semiconductors / 7：
Carrier transport in devices / 8：
Transport in mesoscopic structures / 9：
Appendices
The quantum foundation / 1：
Carrier scattering / 2：
The Boltzmann transport equation / 3：
37.

図書
図書
37. High-speed heterostructure devices : from device concepts to circuit modeling
Patrick Roblin and Hans Rohdin
出版情報: Cambridge : Cambridge University Press, c2002  xxxiv, 688 p. ; 26 cm
所蔵情報: loading…
目次情報: 続きを見る
Preface
Acknowledgements
Heterostructure materials / 1：
Semiclassical theory of heterostructures / 2：
Quantum theory of heterostructures / 3：
Quantum heterostructure devices / 4：
Scattering processes in heterostructures / 5：
Scattering-assisted tunneling / 6：
Frequency response of quantum devices from DC to infrared / 7：
Charge control of the two-dimensional electron gas / 8：
High electric field transport / 9：
I-V model of the MODFET / 10：
Small-and large-signal AC models for the long-channel MODFET / 11：
Small-and large-signal AC models for the short-channel MODFET / 12：
DC and microwave electrothermal modeling of FETs / 13：
Analytical DC analysis of short-gate MODFETs / 14：
Small signal AC analysis of the short-gate velocity-saturated MODFET / 15：
Gate resistance and the Schottky-barrier interface / 16：
MODFET high-frequency performance / 17：
Modeling high-performance HBTs / 18：
Practical high-frequency HBTs / 19：
Index
Preface
Acknowledgements
Heterostructure materials / 1：
38.

図書
図書
38. Microcavities (hbk.)
Alexey Kavokin ... [et al.]
出版情報: Oxford ; New York : Oxford University Press, 2007  xvii, 430 p. ; 24 cm
シリーズ名: Series on semiconductor science and technology ; no. 16
所蔵情報: loading…
目次情報: 続きを見る
Overview of Microcavities / 1：
Properties of microcavities / 1.1：
Q-factor and finesse / 1.1.1：
Intracavity field enhancement and field distribution / 1.1.2：
Tuneability and mode separation / 1.1.3：
Angular mode pattern / 1.1.4：
Low-threshold lasing / 1.1.5：
Purcell factor and lifetimes / 1.1.6：
Strong vs. weak coupling / 1.1.7：
Microcavity realizations / 1.2：
Planar microcavities / 1.3：
Metal microcavities / 1.3.1：
Dielectric Bragg mirrors / 1.3.2：
Spherical mirror microcavities / 1.4：
Pillar microcavities / 1.5：
Whispering-gallery modes / 1.6：
Two-dimensional whispering galleries / 1.6.1：
Three-dimensional whispering-galleries / 1.6.2：
Photonic-crystal cavities / 1.7：
Random lasers / 1.7.1：
Plasmonic cavities / 1.8：
Microcavity lasers / 1.9：
Conclusion / 1.10：
Classical description of light / 2：
Free space / 2.1：
Light-field dynamics in free space / 2.1.1：
Propagation in crystals / 2.2：
Plane waves in bulk crystals / 2.2.1：
Absorption of light / 2.2.2：
Kramers-Kronig relations / 2.2.3：
Coherence / 2.3：
Statistical properties of light / 2.3.1：
Spatial and temporal coherence / 2.3.2：
Wiener-Khinchin theorem / 2.3.3：
Hanbury Brown-Twiss effect / 2.3.4：
Polarization-dependent optical effects / 2.4：
Birefringence / 2.4.1：
Magneto-optical effects / 2.4.2：
Propagation of light in multilayer planar structures / 2.5：
Photonic eigenmodes of planar systems / 2.6：
Photonic bands of 1D periodic structures / 2.6.1：
Stripes, pillars, and spheres: photonic wires and dots / 2.7：
Cylinders and pillar cavities / 2.8.1：
Spheres / 2.8.2：
Further reading / 2.9：
Quantum description of light / 3：
Pictures of quantum mechanics / 3.1：
Historical background / 3.1.1：
Schrodinger picture / 3.1.2：
Antisymmetry of the wavefunction / 3.1.3：
Symmetry of the wavefunction / 3.1.4：
Heisenberg picture / 3.1.5：
Dirac (interaction) picture / 3.1.6：
Other formulations / 3.2：
Density matrix / 3.2.1：
Second quantization / 3.2.2：
Quantization of the light field / 3.2.3：
Quantum states / 3.3：
Fock states / 3.3.1：
Coherent states / 3.3.2：
Glauber-Sudarshan representation / 3.3.3：
Thermal states / 3.3.4：
Mixture states / 3.3.5：
Quantum correlations of quantum fields / 3.3.6：
Statistics of the field / 3.3.7：
Polarization / 3.3.8：
Outlook on quantum mechanics for microcavities / 3.4：
Semiclassical description of light-matter coupling / 3.5：
Light-matter interaction / 4.1：
Classical limit / 4.1.1：
Einstein coefficients / 4.1.2：
Optical transitions in semiconductors / 4.2：
Excitons in semiconductors / 4.3：
Frenkel and Wannier-Mott excitons / 4.3.1：
Excitons in confined systems / 4.3.2：
Quantum wells / 4.3.3：
Quantum wires and dots / 4.3.4：
Exciton-photon coupling / 4.4：
Surface polaritons / 4.4.1：
Exciton-photon coupling in quantum wells / 4.4.2：
Exciton-photon coupling in quantum wires and dots / 4.4.3：
Dispersion of polaritons in planar microcavities / 4.4.4：
Motional narrowing of cavity polaritons / 4.4.5：
Microcavities with quantum wires or dots / 4.4.6：
Quantum description of light-matter coupling in semiconductors / 5：
Rabi dynamics / 5.1：
Bloch equations / 5.3：
Full quantum picture / 5.3.1：
Dressed bosons / 5.3.2：
Lindblad dissipation / 5.4：
Jaynes-Cummings model / 5.5：
Dicke model / 5.6：
Quantization of the exciton field / 5.7：
Excitons as bosons / 5.7.2：
Excitons in quantum dots / 5.7.3：
Dispersion of polaritons / 5.8：
The polariton Hamiltonian / 5.8.2：
Coupling in quantum dots / 5.8.3：
Weak-coupling microcavities / 6：
Purcell effect / 6.1：
The physics of weak coupling / 6.1.1：
Spontaneous emission / 6.1.2：
The case of QDs, 2D excitons and 2D electron-hole pairs / 6.1.3：
Fermi's golden rule / 6.1.4：
Dynamics of the Purcell effect / 6.1.5：
Case of QDs and QWs / 6.1.6：
Experimental realizations / 6.1.7：
Lasers / 6.2：
The physics of lasers / 6.2.1：
Semiconductors in laser physics / 6.2.2：
Vertical-cavity surface-emitting lasers / 6.2.3：
Resonant-cavity LEDs / 6.2.4：
Quantum theory of the laser / 6.2.5：
Nonlinear optical properties of weak-coupling microcavities / 6.3：
Bistability / 6.3.1：
Phase matching / 6.3.2：
Strong coupling: resonant effects / 6.4：
Optical properties background / 7.1：
Quantum well microcavities / 7.1.1：
Variations on a theme / 7.1.2：
Motional narrowing / 7.1.3：
Polariton emission / 7.1.4：
Near-resonant-pumped optical nonlinearities / 7.2：
Pulsed stimulated scattering / 7.2.1：
Quasimode theory of parametric amplification / 7.2.2：
Microcavity parametric oscillators / 7.2.3：
Resonant excitation case and parametric amplification / 7.3：
Semiclassical description / 7.3.1：
Stationary solution and threshold / 7.3.2：
Theoretical approach: quantum model / 7.3.3：
Three-level model / 7.3.4：
Threshold / 7.3.5：
Two-beam experiment / 7.4：
One-beam experiment and spontaneous symmetry breaking / 7.4.1：
Dressing of the dispersion induced by polariton condensates / 7.4.2：
Bistable behaviour / 7.4.3：
Strong coupling: polariton Bose condensation / 8：
Introduction / 8.1：
Basic ideas about Bose-Einstein condensation / 8.2：
Einstein proposal / 8.2.1：
Experimental realization / 8.2.2：
Modern definition of Bose-Einstein condensation / 8.2.3：
Specificities of excitons and polaritons / 8.3：
Thermodynamic properties of cavity polaritons / 8.3.1：
Interacting bosons and Bogoliubov model / 8.3.2：
Polariton superfluidity / 8.3.3：
Quasicondensation and local effects / 8.3.4：
High-power microcavity emission / 8.4：
Thresholdless polariton lasing / 8.5：
Kinetics of formation of polariton condensates: semiclassical picture / 8.6：
Qualitative features / 8.6.1：
The semiclassical Boltzmann equation / 8.6.2：
Numerical solution of Boltzmann equations, practical aspects / 8.6.3：
Effective scattering rates / 8.6.4：
Numerical simulations / 8.6.5：
Kinetics of formation of polariton condensates: quantum picture in the Born-Markov approximation / 8.7：
Density matrix dynamics of the ground-state / 8.7.1：
Discussion / 8.7.2：
Coherence dynamics / 8.7.3：
Kinetics of formation of polariton condensates: quantum picture beyond the Born-Markov approximation / 8.8：
Two-oscillator toy theory / 8.8.1：
Coherence of polariton-laser emission / 8.8.2：
Order parameter and phase diffusion coefficient / 8.8.3：
Semiconductor luminescence equations / 8.9：
Claims of exciton and polariton Bose-Einstein condensation / 8.10：
Spin and polarization / 8.11：
Spin relaxation of electrons, holes and excitons in semiconductors / 9.1：
Microcavities in the presence of a magnetic field / 9.2：
Resonant Faraday rotation / 9.3：
Spin relaxation of exciton-polaritons in microcavities: experiment / 9.4：
Spin relaxation of exciton-polaritons in microcavities: theory / 9.5：
Optical spin Hall effect / 9.6：
Optical induced Faraday rotation / 9.7：
Interplay between spin and energy relaxation of exciton-polaritons / 9.8：
Polarization of Bose condensates and polariton superfluidity / 9.9：
Magnetic-field effect and superfluidity / 9.10：
Finite-temperature case / 9.11：
Spin dynamics in parametric oscillators / 9.12：
Classical nonlinear optics consideration / 9.13：
Polarized OPO: quantum model / 9.14：
Conclusions / 9.15：
Glossary / 9.16：
Linear algebra / A：
Scattering rates of polariton relaxation / B：
Polariton-phonon interaction / B.1：
Interaction with longitudinal optical phonons / B.1.1：
Interaction with acoustic phonons / B.1.2：
Polariton-electron interaction / B.2：
Polariton-polariton interaction / B.3：
Polariton decay / B.3.1：
Polariton-structural-disorder interaction / B.4：
Derivation of the Landau criterion of superfluidity and Landau formula / C：
Landau quantization and renormalization of Rabi splitting / D：
References
Overview of Microcavities / 1：
Properties of microcavities / 1.1：
Q-factor and finesse / 1.1.1：
39.

図書
図書
39. 34th International Symposium on Compound Semiconductors (ISCS-2007), Kyoto, Japan, 15-18 October 2007
guest editors, Yoshiro Hirayama and Tetsuomi Sogawa
出版情報: Weinheim : Wiley-VCH, c2008  [A24], 2699-[3202], A25-A32 p. ; 28 cm
シリーズ名: Physica status solidi ; . Proceedings ; 5, no.9, 2008
所蔵情報: loading…
40.

図書
図書
40. Solid state electronic devices
[by] Ben G. Streetman
出版情報: Englewood Cliffs, N.J. : Prentice-Hall, [1972]  xv, 463 p ; 24 cm
シリーズ名: Prentice-Hall series in solid state physical electronics
Prentice-Hall electrical engineering series
所蔵情報: loading…
目次情報: 続きを見る
Crystal Properties and Growth of Semiconductors / 1：
Atoms and Electrons / 2：
Energy Bands and Charge Carriers in Semiconductors / 3：
Excess Carriers in Semiconductors / 4：
Junctions / 5：
Field-Effect Transistors / 6：
Bipolar Junction Transistors / 7：
Optoelectronic Devices / 8：
Integrated Circuits / 9：
Negative Conductance Microwave Devices / 10：
Power Devices / 11：
Definitions of Commonly Used Symbols / Appendix I：
Physical Constants and Conversion Factors / Appendix II：
Properties of Semiconductor Materials / Appendix III：
Derivation of the Density of States in the Conduction Band / Appendix IV：
Derivation of Fermi-Dirac Statistics / Appendix V：
Dry and Wet Thermal Oxide Thickness as a Function of Time and Temperature / Appendix VI：
Solid Solubilities of Impurities in Si / Appendix VII：
Diffusivities of Dopants in Si and SiO2 / Appendix VIII：
Projected Range and Straggle as a Function of Implant Energy in Si, SiO2 and GaAs / Appendix IX：
Index
Crystal Properties and Growth of Semiconductors / 1：
Atoms and Electrons / 2：
Energy Bands and Charge Carriers in Semiconductors / 3：
41.

図書
図書
41. Physical and solid state electronics
Kanaan Kano
出版情報: Reading, Mass. : Addison-Wesley Pub. Co, [1972]  x, 451 p. ; 25 cm
シリーズ名: Addison-Wesley series in electrical engineering
所蔵情報: loading…
42.

図書
図書
42. Semiconductor physics : an introduction. 3rd ed. (U.S. ; Germany)
Karlheinz Seeger
出版情報: Berlin ; Tokyo : Springer-Verlag, c1985  xiv, 476 p. ; 24 cm
シリーズ名: Springer series in solid-state sciences ; v. 40
所蔵情報: loading…
43.

図書
図書
43. Semiconductor devices for optical communication. 2nd updated ed (: Germany ; : U. S.)
edited by H. Kressel ; with contributions by G. Arnold ... [et al.]
出版情報: Berlin ; Tokyo : Springer-Verlag, c1982  xiv, 309 p. ; 24 cm
シリーズ名: Topics in applied physics ; v. 39
所蔵情報: loading…
目次情報: 続きを見る
Thrombin: Structure, Functions, and Regulation / Enrico Di Cera ; Andras Gruber1：
Thrombin: To PAR or Not to PAR, and the Regulation of Inflammation / Rithwik Ramachandran ; Mahmoud El-Daly ; Mahmoud Saifeddine ; Morley D. Hollenberg2：
Regulation of Thrombin Receptor Signaling / JoAnn Trejo3：
Thrombin and Activated Protein C: Integrated to Regulate Vascular Physiology / Matthias Riewald4：
The Role of Thrombin in Vascular Development / Martin Moser ; Cam Patterson5：
The Role of Thrombin in Angiogenesis / Nikos E. Tsopanoglou ; Michael E. Maragoudakis6：
Thrombin and Thrombin Peptides in Wound Healing and Tissue Repair / Barbara Olszewska-Pazdrak ; John S. Bergmann ; Gerald M. Fuller ; Darrell H. Carney7：
The Role of Thrombin and Thrombin Receptors in the Brain / Weibo Luo ; Yingfei Wang ; Georg Reiser8：
The Role of Thrombin in Tumor Biology / Boris Kobrinsky ; Simon Karpatkin9：
The Role of Thrombin and its Receptors in Epithelial Malignancies: Lessons from a Transgenic Mouse Model and Transcriptional Regulation / Zaidoun Salah ; Sorina Grisaru-Granovsky ; Myriam Maoz ; Beatrice Uziely ; Irit Cohen ; Hagit Turm ; Tamar Peretz ; Rachel Bar-Shavit10：
Anti-thrombotic Therapy in Cancer Patients / Gloria A. Petralia ; Ajay K. Kakkar11：
Thrombin Receptor Modulators: Medicinal Chemistry, Biological Evaluation, and Clinical Application / Cailin Chen ; Bruce E. Maryanoff ; Patricia Andrade-Gordon12：
Novel Anticoagulant Therapy: Principle and Practice / Shaker A. Mousa13：
Index
Thrombin: Structure, Functions, and Regulation / Enrico Di Cera ; Andras Gruber1：
Thrombin: To PAR or Not to PAR, and the Regulation of Inflammation / Rithwik Ramachandran ; Mahmoud El-Daly ; Mahmoud Saifeddine ; Morley D. Hollenberg2：
Regulation of Thrombin Receptor Signaling / JoAnn Trejo3：
44.

図書
図書
44. Physics of semiconductor devices
[by] S.M. Sze
出版情報: New York : Wiley-Interscience, [1969]  xiv, 812 p. ; 23 cm
所蔵情報: loading…
45.

図書
図書
45. The Gunn-Hilsum effect
Melvin P. Shaw, Harold L. Grubin, and Peter R. Solomon
出版情報: New York : Academic Press, 1979  xviii, 250 p. ; 24 cm
所蔵情報: loading…
46.

図書
図書
46. Electrochemistry at metal and semiconductor electrodes
by Norio Sato
出版情報: Amsterdam ; New York : Elsevier, 1998  xi, 400 p. ; 24 cm
所蔵情報: loading…
目次情報: 続きを見る
The Energy Level of Particles / 1：
The Energy Level of Electrons / 2：
The Energy Level of Ions / 3：
Electrode Potential / 4：
Electric Double Layer at Electrode Interfaces / 5：
Electrochemical Cells / 6：
Electrochemical cells
Electromotive force of electrochemical cells
Equilibrium potential of electrode reactions
Electrochemical reference level for hydrated ions
References
Electrode Reactions / 7：
Electrode reactions
Reaction rate
Reaction mechanism
Rate-determining steps of reactions
Electrode Reactions in Electron Transfer / 8：
Electrode Reactions in Ion Transfer / 9：
Semiconductor photoelectrodes / 10：
Mixed Electrodes / 11：
List of Symbols
Index
The Energy Level of Particles / 1：
The Energy Level of Electrons / 2：
The Energy Level of Ions / 3：
47.

図書
図書
47. Properties of strained and relaxed silicon germanium
edited by Erich Kasper
出版情報: London : INSPEC, IEE, c1995  xiv, 232 p. ; 29 cm
シリーズ名: EMIS datareviews series ; no. 12
所蔵情報: loading…
48.

図書
図書
48. Electrochemistry of semiconductors
by Viktor A. Myamlin [and] Yurii V. Pleskov. Translated from Russian. With a foreword [by] C.G.B. Garrett
出版情報: New York : Plenum Press, 1967  xxii, 430 p ; 24 cm
所蔵情報: loading…
49.

図書
図書
49. Photo and thermoelectric effects in semiconductors
by Jan Tauc ; translated by Margaret Laner
出版情報: Oxford : Pergamon, 1962  xi, 248 p. ; 24 cm
シリーズ名: International series of monographs on semiconductors ; v. 2
所蔵情報: loading…
50.

図書
図書
50. Solar energy conversion : solid-state physics aspects (gw ; us)
edited by B. O. Seraphin, with contributions by J. A. Aranovich ... [et al.]
出版情報: Berlin ; New York : Springer-Verlag, 1979  xii, 336 p. ; 24 cm
シリーズ名: Topics in applied physics ; v. 31
所蔵情報: loading…
51.

図書
図書
51. Molecular semiconductors : photoelectrical properties and solar cells (: U.S. ; : Berlin)
J. Simon and J.-J. André ; editors, J.M. Lehn, Ch. W. Rees
出版情報: Berlin ; New York : Springer-Verlag, 1984  xiii, 288 p. ; 25 cm
所蔵情報: loading…
52.

図書
図書
52. Semiconductor photoelectrochemistry
Yu. V. Pleskov and Yu. Ya. Gurevich ; traslation editor P.N. Bartlett
出版情報: New York : Consultants Bureau, c1986  xxiv, 422 p. ; 26 cm
所蔵情報: loading…
53.

図書
図書
53. Bonds and bands in semiconductors
J. C. Phillips
出版情報: San Diego ; Tokyo : Academic Press, c1973  xii, 288 p. ; 24 cm
シリーズ名: Materials science and technology series
所蔵情報: loading…
54.

図書
図書
54. Photoelectronic properties of semiconductors (: pbk)
Richard H. Bube
出版情報: Cambridge ; New York : Cambridge University Press, c1992  xviii, 318 p. ; ill. : 24 cm
所蔵情報: loading…
目次情報: 続きを見る
Introductory concepts / 1：
Photoconductivity / 2：
One-center recombination models / 3：
The Shockley-Read one-center model / 4：
Two-center recombination effects / 5：
Recombination mechanisms / 6：
Steady-state photoelectronic analysis / 7：
Transient photoelectronic analysis / 8：
Photoeffects at grain boundaries / 9：
Amorphous semiconductors / 10：
Photovoltaic effects / 11：
Quantum wells and superlattices / 12：
Bibliography
Index
Introductory concepts / 1：
Photoconductivity / 2：
One-center recombination models / 3：
55.

図書
図書
55. Physics of semiconductor devices. 4th ed
S.M. Sze, Yiming Li, Kwok K. Ng
出版情報: Hoboken, NJ : Wiley, 2021  vii, 931 p. ; 24 cm
所蔵情報: loading…
56.

図書
図書
56. Semiconductor devices : physics and technology. 3rd ed., international student version
S.M. Sze, M.K. Lee
出版情報: [Singapore] : Wiley, c2013  ix, 582 p. ; 26 cm
所蔵情報: loading…
57.

図書
図書
57. Quantum processes in semiconductors. 2nd ed (hard ; pbk)
B.K. Ridley
出版情報: Oxford : Clarendon Press , New York : Oxford University Press, 1988  xii, 354 p. ; 24 cm
所蔵情報: loading…
目次情報: 続きを見る
Band Structure of Semiconductors / 1：
Energy Levels / 2：
Lattice Scattering / 3：
Impurity Scattering / 4：
Radiative Transitions / 5：
Non-Radiative Processes / 6：
Quantum Processes in a Magnetic Field / 7：
Scattering in a Degenerate Gas / 8：
Dynamic Screening / 9：
Band Structure of Semiconductors / 1：
Energy Levels / 2：
Lattice Scattering / 3：
58.

図書
図書
58. Fundamentals of semiconductor devices. 2nd ed (: pbk)
Betty Lise Anderson, Richard L. Anderson
出版情報: New York : McGraw-Hill Education, c2018  xiv, 816 p. ; 24 cm
所蔵情報: loading…
59.

図書
図書
59. Carrier scattering in metals and semiconductors
V.F. Gantmakher and Y.B. Levinson ; translated from the Russian by Nicholas Weinstein
出版情報: Amsterdam ; Tokyo : North-Holland , New York, N.Y. : Sole distributors for the USA and Canada, Elsevier Science, 1987  xviii, 459 p. ; 25 cm
シリーズ名: Modern problems in condensed matter sciences ; v. 19
所蔵情報: loading…
60.

図書
図書
60. Device electronics for integrated circuits. 3rd ed.
Richard S. Muller, Theodore I. Kamins with Mansun Chan
出版情報: New York : John Wiley & Sons, c2003  xviii, 528 p. ; 26 cm
所蔵情報: loading…
61.

図書
図書
61. Fundamentals of semiconductors : physics and materials properties. 3rd, rev. and enl. ed., 3rd corrected printing
Peter Y. Yu, Manuel Cardona
出版情報: Berlin : Springer Verlag, 2005, c2001  xviii, 639 p. ; 25 cm
所蔵情報: loading…
目次情報: 続きを見る
Introduction / 1：
A Survey of Semiconductors / 1.1：
Elemental Semiconductors / 1.1.1：
Binary Compounds / 1.1.2：
Oxides / 1.1.3：
Layered Semiconductors / 1.1.4：
Organic Semiconductors / 1.1.5：
Magnetic Semiconductors / 1.1.6：
Other Miscellaneous Semiconductors / 1.1.7：
Growth Techniques / 1.2：
Czochralski Method / 1.2.1：
Bridgman Method / 1.2.2：
Chemical Vapor Deposition / 1.2.3：
Molecular Beam Epitaxy / 1.2.4：
Liquid Phase Epitaxy / 1.2.5：
Summary
Electronic Band Structures / 2：
Quantum Mechanics / 2.1：
Translational Symmetry and Brillouin Zones / 2.2：
A Pedestrian's Guide to Group Theory / 2.3：
Definitions and Notations / 2.3.1：
Symmetry Operations of the Diamond and Zinc-Blende Structures / 2.3.2：
Representations and Character Tables / 2.3.3：
Some Applications of Character Tables / 2.3.4：
Empty Lattice or Nearly Free Electron Energy Bands / 2.4：
Nearly Free Electron Band Structure in a Zinc-Blende Crystal / 2.4.1：
Nearly Free Electron Energy Bands in Diamond Crystals / 2.4.2：
Band Structure Calculation by Pseudopotential Methods / 2.5：
Pseudopotential Form Factors in Zinc-Blende- and Diamond-Type Semiconductors / 2.5.1：
Empirical and Self-Consistent Pseudopotential Methods / 2.5.2：
The kċp Method of Band-Structure Calculations / 2.6：
Effective Mass of a Nondegenerate Band Using the kċp Method / 2.6.1：
Band Dispersion near a Degenerate Extremum: Top Valence Bands in Diamondand Zinc-Blende-Type Semiconductors / 2.6.2：
Tight-Binding or LCAO Approach to the Band Structure of Semiconductors / 2.7：
Molecular Orbitals and Overlap Parameters / 2.7.1：
Band Structure of Group-IV Elements by the Tight-Binding Method / 2.7.2：
Overlap Parameters and Nearest-Neighbor Distances / 2.7.3：
Problems
Vibrational Properties of Semiconductors, and Electron-Phonon Interactions / 3：
Phonon Dispersion Curves of Semiconductors / 3.1：
Models for Calculating Phonon Dispersion Curves of Semiconductors / 3.2：
Force Constant Models / 3.2.1：
Shell Model / 3.2.2：
Bond Models / 3.2.3：
Bond Charge Models / 3.2.4：
Electron-Phonon Interactions / 3.3：
Strain Tensor and Deformation Potentials / 3.3.1：
Electron-Acoustic-Phonon Interaction at Degenerate Bands / 3.3.2：
Piezoelectric Electron-Acoustic-Phonon Interaction / 3.3.3：
Electron-Optical-Phonon Deformation Potential Interactions / 3.3.4：
Frohlich Interaction / 3.3.5：
Interaction Between Electrons and Large-Wavevector Phonons: Intervalley Electron-Phonon Interaction / 3.3.6：
Electronic Properties of Defects / 4：
Classification of Defects / 4.1：
Shallow or Hydrogenic Impurities / 4.2：
Effective Mass Approximation / 4.2.1：
Hydrogenic or Shallow Donors / 4.2.2：
Donors Associated with Anisotropic Conduction Bands / 4.2.3：
Acceptor Levels in Diamond-and Zinc-Blende-Type Semiconductors / 4.2.4：
Deep Centers / 4.3：
Green's Function Method for Calculating Defect Energy Levels / 4.3.1：
An Application of the Green's Function Method: Linear Combination of Atomic Orbitals / 4.3.2：
Another Application of the Green's Function Method: Nitrogen in GaP and Ga AsP Alloys / 4.3.3：
Final Note on Deep Centers / 4.3.4：
Electrical Transport / 5：
Quasi-Classical Approach / 5.1：
Carrier Mobility for a Nondegenerate Electron Gas / 5.2：
Relaxation Time Approximation / 5.2.1：
Nondegenerate Electron Gas in a Parabolic Band / 5.2.2：
Dependence of Scattering and Relaxation Times on Electron Energy / 5.2.3：
Momentum Relaxation Times / 5.2.4：
Temperature Dependence of Mobilities / 5.2.5：
Modulation Doping / 5.3：
High-Field Transport and Hot Carrier Effects / 5.4：
Velocity Saturation / 5.4.1：
Negative Differential Resistance / 5.4.2：
Gunn Effect / 5.4.3：
Magneto-Transport and the Hall Effect / 5.5：
Magneto-Conductivity Tensor / 5.5.1：
Hall Effect / 5.5.2：
Hall Coefficient for Thin Film Samples (van der Pauw Method) / 5.5.3：
Hall Effect for a Distribution of Electron Energies / 5.5.4：
Optical Properties I / 6：
Macroscopic Electrodynamics / 6.1：
Digression: Units for the Frequency of Electromagnetic Waves / 6.1.1：
Experimental Determination of Optical Constants / 6.1.2：
Kramers-Kronig Relations / 6.1.3：
The Dielectric Function / 6.2：
Experimental Results / 6.2.1：
Microscopic Theory of the Dielectric Function / 6.2.2：
Joint Density of States and Van Hove Singularities / 6.2.3：
Van Hove Singularities in ϵi / 6.2.4：
Direct Absorption Edges / 6.2.5：
Indirect Absorption Edges / 6.2.6：
""""Forbidden"""" Direct Absorption Edges / 6.2.7：
Excitons / 6.3：
Exciton Effect at M0 Critical Points / 6.3.1：
Absorption Spectra of Excitons / 6.3.2：
Exciton Effect at M1 Critical Points or Hyperbolic Excitons / 6.3.3：
Exciton Effect at M3 Critical Points / 6.3.4：
Phonon-Polaritons and Lattice Absorption / 6.4：
Phonon-Polaritons / 6.4.1：
Lattice Absorption and Reflection / 6.4.2：
Multiphonon Lattice Absorption / 6.4.3：
Dynamic Effective Ionic Charges in Heteropolar Semiconductors / 6.4.4：
Absorption Associated with Extrinsic Electrons / 6.5：
Free-Carrier Absorption in Doped Semiconductors / 6.5.1：
Absorption by Carriers Bound to Shallow Donors and Acceptors / 6.5.2：
Modulation Spectroscopy / 6.6：
Frequency Modulated Reflectance and Thermoreflectance / 6.6.3：
Piezoreflectance / 6.6.4：
Electroreflectance (Franz-Keldysh Effect) / 6.6.5：
Photoreflectance / 6.6.6：
Reflectance Difference Spectroscopy / 6.6.7：
Optical Properties II / 7：
Emission Spectroscopies / 7.1：
Band-to-Band Transitions / 7.1.1：
Free-to-Bound Transitions / 7.1.2：
Donor-Acceptor Pair Transitions / 7.1.3：
Excitons and Bound Excitons / 7.1.4：
Luminescence Excitation Spectroscopy / 7.1.5：
Light Scattering Spectroscopies / 7.2：
Macroscopic Theory of Inelastic Light Scattering by Phonons / 7.2.1：
Raman Tensor and Selection Rules / 7.2.2：
Experimental Determination of Raman Spectra / 7.2.3：
Microscopic Theory of Raman Scattering / 7.2.4：
A Detour into the World of Feynman Diagrams / 7.2.5：
Brillouin Scattering / 7.2.6：
Experimental Determination of Brillouin Spectra / 7.2.7：
Resonant Raman and Brillouin Scattering / 7.2.8：
Photoelectron Spectroscopy / 8：
Photoemission / 8.1：
Angle-Integrated Photoelectron Spectra of the Valence Bands / 8.1.1：
Angle-Resolved Photoelectron Spectra of the Valence Bands / 8.1.2：
Core Levels / 8.1.3：
Inverse Photoemission
Surface Effects / 8.2：
Surface States and Surface Reconstruction / 8.3.1：
Surface Energy Bands / 8.3.2：
Fermi Level Pinning and Space Charge Layers / 8.3.3：
Effect of Quantum Confinement on Electrons and Phonons in Semiconductors / 9：
Quantum Confinement and Density of States / 9.1：
Quantum Confinement of Electrons and Holes / 9.2：
Semiconductor Materials for Quantum Wells and Superlattices / 9.2.1：
Classification of Multiple Quantum Wells and Superlattices / 9.2.2：
Confinement of Energy Levels of Electrons and Holes / 9.2.3：
Some Experimental Results / 9.2.4：
Phonons in Superlattices / 9.3：
Phonons in Superlattices: Folded Acoustic and Confined Optic Modes / 9.3.1：
Folded Acoustic Modes: Macroscopic Treatment / 9.3.2：
Confined Optical Modes: Macroscopic Treatment / 9.3.3：
Electrostatic Effects in Polar Crystals: Interface Modes / 9.3.4：
Raman Spectra of Phonons in Semiconductor Superlattices / 9.4：
Raman Scattering by Folded Acoustic Phonons / 9.4.1：
Raman Scattering by Confined Optical Phonons / 9.4.2：
Raman Scattering by Interface Modes / 9.4.3：
Macroscopic Models of Electron-LO Phonon (Fröhlich) Interaction in Multiple Quantum Wells / 9.4.4：
Electrical Transport: Resonant Tunneling / 9.5：
Resonant Tunneling Through a Double-Barrier Quantum Well / 9.5.1：
I-V Characteristics of Resonant Tunneling Devices / 9.5.2：
Quantum Hall Effects in Two-Dimensional Electron Gases / 9.6：
Landau Theory of Diamagnetism in a Three-Dimensional Free Electron Gas / 9.6.1：
Magneto-Conductivity of a Two-Dimensional Electron Gas: Filling Factor / 9.6.2：
The Experiment of von Klitzing, Pepper and Dorda / 9.6.3：
Explanation of the Hall Plateaus in the Integral Quantum Hall Effect / 9.6.4：
Concluding Remarks / 9.7：
Appendix: Pioneers of Semiconductor Physics Remember
Ultra-Pure Germanium: From Applied to Basic Research or an Old Semiconductor Offering New Opportunities / Eugene E. Haller
Two Pseudopotential Methods: Empirical and Ab Initio / Marvin L. Cohen
The Early Stages of Band-Structures Physics and Its Struggles for a Place in the Sun / Conyers Herring
Cyclotron Resonance and Structure of Conduction and Valence Band Edges in Silicon and Germanium / Charles Kittel
Optical Properties of Amorphous Semiconductors and Solar Cells / Jan Tauc
Optical Spectroscopy of Shallow Impurity Centers / Elias Burstein
On the Prehistory of Angular Resolved Photoemission / Neville V. Smith
The Discovery and Very Basics of the Quantum Hall Effect / Klaus von Klitzing
The Birth of the Semiconductor Superlattice / Leo Esaki
References
Subject Index
Table of Fundamental Physical Constants (Inside Front Cover)
Table of Units (Inside Back Cover)
Introduction / 1：
A Survey of Semiconductors / 1.1：
Elemental Semiconductors / 1.1.1：
62.

図書
図書
62. Solid state physical electronics. Maruzen Asian ed.
Aldert Van der Ziel
出版情報: Englewood Cliffs, N.J. : Prentice-Hall, 1957  x, 604 p. ; 22 cm
シリーズ名: Prentice-Hall electrical engineering series
所蔵情報: loading…
文献の複写および貸借の依頼を行う
 文献複写・貸借依頼