Preface |
Acknowledgements |
Fundamentals of Signal Transmission on Interconnects / 1: |
Interconnect as part of a packaging hierarchy / 1.1: |
The physical basis of interconnects / 1.2: |
What an interconnect is and how information is transmitted / 1.2.1: |
The physics, a guided wave / 1.3: |
Transmission of a pulse / 1.3.1: |
Transverse ElectroMagnetic lines (TEM-lines) / 1.3.2: |
Multimoding / 1.3.3: |
The effect of dielectric / 1.3.4: |
Frequency-dependent charge distribution / 1.3.5: |
Dispersion / 1.3.6: |
When an interconnect should be treated as a transmission line / 1.4: |
The concept of radio frequency transmission lines / 1.5: |
Primary transmission line constants / 1.6: |
Secondary constants for transmission lines / 1.7: |
Transmission line impedances / 1.8: |
Reflection / 1.9: |
Reflection and Voltage Standing-Wave Ratio (VSWR) / 1.9.1: |
Forward and backward travelling pulses / 1.9.2: |
Effect on signal integrity / 1.9.3: |
Multiple conductors / 1.10: |
Return currents / 1.11: |
Common impedance coupling / 1.11.1: |
Modeling of interconnects / 1.12: |
Summary / 1.13: |
On-Chip Interconnects for Digital Systems / 2: |
Overview of on-chip interconnects / 2.1: |
Types of on-chip interconnects / 2.1.1: |
Experimental characterization of an on-chip interconnect / 2.2: |
RC Modelling on-chip interconnects / 2.3: |
Delay modelling / 2.3.1: |
RC modelling / 2.3.2: |
Modelling inductance / 2.4: |
When are inductance effects important? / 2.4.1: |
Inductance extraction / 2.4.2: |
Design approaches to handling interconnect effects / 2.5: |
Performance-driven routing / 2.5.1: |
Transmission line return paths / 2.5.2: |
Interconnect Technologies / 3: |
Introductory remarks / 3.1: |
Microwave frequencies and applications / 3.2: |
Transmission line structures / 3.3: |
Imageline / 3.3.1: |
Microstrip / 3.3.2: |
Finline / 3.3.3: |
Inverted microstrip / 3.3.4: |
Slotline / 3.3.5: |
Trapped inverted microstrip / 3.3.6: |
Coplanar waveguide (CPW) / 3.3.7: |
Coplanar strip (CPS) and differential line / 3.3.8: |
Stripline / 3.3.9: |
Summary of interconnect properties / 3.3.10: |
Substrates for hybrid microcircuits / 3.4: |
FR4 ('printed circuit board') / 3.4.1: |
Ceramic substrates / 3.4.2: |
Softboard / 3.4.3: |
Overall appraisal--alternative substrates and structures / 3.4.4: |
Sapphire--the 'benchmark' substrate material / 3.4.5: |
Thin-film modules / 3.5: |
Plate-through technique / 3.5.1: |
Etch-back technique / 3.5.2: |
Equipment required / 3.5.3: |
Thin resistive films / 3.5.4: |
Thick-film modules / 3.6: |
Pastes, printing and processing for thick-film modules / 3.6.1: |
Monolithic technology / 3.7: |
Introduction / 3.7.1: |
Multilayer interconnect / 3.7.2: |
Metallization / 3.7.3: |
Low-k dielectrics / 3.7.4: |
MIC and MMIC approaches compared / 3.7.5: |
Printed circuit boards / 3.8: |
Organic PCBs / 3.8.1: |
Ceramic PCBs / 3.8.2: |
Multichip modules / 3.9: |
MCM-L substrates / 3.9.1: |
MCM-C substrates / 3.9.2: |
MCM-D substrates / 3.9.3: |
Characterization of interconnects on an MCM: a case study / 3.9.4: |
MCM Summary / 3.9.5: |
Microstrip Design at Low Frequencies / 4: |
The microstrip design problem / 4.1: |
Digital interconnect / 4.1.1: |
A transistor amplifier input network / 4.1.2: |
The geometry of microstrip / 4.1.3: |
The quasi-TEM mode of propagation / 4.2: |
Static-TEM parameters / 4.3: |
The characteristic impedance Z[subscript 0] / 4.3.1: |
The effective microstrip permittivity [varepsilon subscript eff] / 4.3.2: |
Synthesis: the width-to-height ratio w/h / 4.3.3: |
Wavelength [lambda], and physical length l / 4.3.4: |
Approximate graphically-based synthesis / 4.4: |
Formulas for accurate static-TEM design calculations / 4.5: |
Synthesis formulas (Z[subscript 0] and f given) / 4.5.1: |
Analysis formulas (w/h and [varepsilon subscript r] given) / 4.5.2: |
Overall accuracies to be expected from the previous expressions / 4.5.3: |
Analysis techniques requiring substantial computer power / 4.6: |
A worked example of static-TEM synthesis / 4.7: |
Graphical determination / 4.7.1: |
Accurately calculated results / 4.7.2: |
Final dimensions of the microstrip element / 4.7.3: |
Microstrip on a dielectrically anisotropic substrate / 4.8: |
Microstrip on a ferrite substrate / 4.9: |
Effects of strip thickness, enclosure and manufacturing tolerances / 4.10: |
Effects of finite strip thickness / 4.10.1: |
Effects of a metallic enclosure / 4.10.2: |
Effects due to manufacturing tolerances / 4.10.3: |
Pulse propagation along microstrip lines / 4.11: |
Recommendations relating to the static-TEM approaches / 4.12: |
The principal static-TEM synthesis formulas / 4.12.1: |
Microstrip on a sapphire (anisotropic) substrate / 4.12.2: |
Design corrections for non-semiconductor substrates / 4.12.3: |
Microstrip and Stripline at High Frequencies / 5: |
The scope of this chapter / 5.1: |
Dispersion in microstrip / 5.2: |
Approximate calculations accounting for dispersion / 5.3: |
Accurate design formulas / 5.4: |
Edwards and Owens' expressions / 5.4.1: |
Expressions suitable for millimetre-wave design / 5.4.2: |
Dispersion curves derived from simulations / 5.4.3: |
Effects due to ferrite and to dielectrically anisotropic substrates / 5.5: |
Effects of ferrite substrates / 5.5.1: |
Effects of a dielectrically anisotropic substrate / 5.5.2: |
Designs requiring dispersion calculations--worked examples / 5.6: |
Field solutions / 5.7: |
One example of a 'classic' frequency-dependent computer-based field solution / 5.7.1: |
Analysis of arbitrary planar configurations / 5.7.2: |
Asymmetry effects / 5.7.3: |
Time-domain approaches / 5.7.4: |
Frequency-dependence of the microstrip characteristic impedance / 5.8: |
Different definitions and trends with increasing frequency / 5.8.1: |
Use of the planar waveguide model / 5.8.2: |
A further alternative expression / 5.8.3: |
A design algorithm for microstrip width / 5.8.4: |
An example derived from a simulation / 5.8.5: |
Operating frequency limitations / 5.9: |
The TM mode limitation / 5.9.1: |
The lowest-order transverse microstrip resonance / 5.9.2: |
Power losses and parasitic coupling / 5.10: |
Q-factor and attenuation coefficient / 5.10.1: |
Conductor losses / 5.10.2: |
Dielectric loss / 5.10.3: |
Radiation / 5.10.4: |
Surface-wave propagation / 5.10.5: |
Parasitic coupling / 5.10.6: |
Radiation and surface-wave losses from discontinuities / 5.10.7: |
Losses in microstrip on semi-insulating GaAs / 5.10.8: |
Superconducting microstrips / 5.11: |
Stripline design / 5.12: |
Symmetrical stripline formulas / 5.12.1: |
Design recommendations / 5.13: |
Recommendation 1 / 5.13.1: |
Recommendation 2 / 5.13.2: |
Recommendation 3 / 5.13.3: |
Recommendation 4 / 5.13.4: |
Recommendation 5 / 5.13.5: |
Characteristic impedance as a function of frequency / 5.13.6: |
Computer-aided design / 5.13.7: |
CPW Design Fundamentals / 6: |
Introduction--properties of coplanar waveguide / 6.1: |
Modelling CPWs / 6.2: |
Effective permittivity / 6.2.1: |
Characteristic impedance / 6.2.2: |
Formulas for accurate calculations / 6.3: |
Analysis and synthesis approaches / 6.3.1: |
Loss mechanisms / 6.4: |
Conductor loss / 6.4.1: |
Radiation loss / 6.4.3: |
CPW with intervening SiO[subscript 2] layer / 6.4.4: |
Fundamental and theoretical considerations / 6.5: |
Results from test runs using electromagnetic simulation / 6.5.2: |
Experimental results / 6.5.3: |
Discontinuities / 6.6: |
Step changes in width and separation / 6.6.1: |
Open-circuit / 6.6.2: |
Symmetric series gap / 6.6.3: |
Coplanar short-circuit / 6.6.4: |
Right-angle bends / 6.6.5: |
T-junctions / 6.6.6: |
Air bridges / 6.6.7: |
Cross-over junctions / 6.6.8: |
Circuit elements / 6.7: |
Interdigital capacitors and stubs / 6.7.1: |
Filters / 6.7.2: |
Couplers and baluns / 6.7.3: |
Power dividers / 6.7.4: |
Variants upon the basic CPW structure / 6.8: |
CPW with top and bottom metal shields / 6.8.1: |
Multilayer CPW / 6.8.2: |
Trenched CPW on a silicon MMIC / 6.8.3: |
Transitions between CPW and other media / 6.8.4: |
Flip-chip realizations / 6.9: |
Mixers, micromachined structures and other CPW issues / 6.10: |
Mixers and frequency doubler / 6.10.1: |
GaAs FET characterization and specialized resonators / 6.10.2: |
Micromachined structures / 6.10.3: |
Leakage suppression and 50 GHz interconnect / 6.10.4: |
Light dependence of silicon FGCPW / 6.10.5: |
Differential line and coplanar strip (CPS) / 6.11: |
Discontinuities in Microstrip and Stripline / 6.12: |
The main discontinuities / 7.1: |
The foreshortened open-circuit / 7.2: |
Equivalent end-effect length / 7.2.1: |
Upper limit to end-effect length (quasi-static basis) / 7.2.2: |
The series gap / 7.3: |
Accuracy of gap capacitance calculations / 7.3.1: |
Microstrip short-circuits / 7.4: |
Further discontinuities / 7.5: |
The right-angled bend or 'corner' / 7.6: |
Mitred or 'matched' microstrip bends--compensation techniques / 7.7: |
Step changes in width (impedance steps) / 7.8: |
The symmetrical microstrip step / 7.8.1: |
The asymmetrical step in microstrip / 7.8.2: |
The narrow transverse slit / 7.9: |
The microstrip T-junction / 7.10: |
Compensated T-junctions / 7.11: |
Cross-junctions / 7.12: |
Frequency dependence of discontinuity effects / 7.13: |
Open-circuits and series gaps / 7.13.1: |
Other discontinuities / 7.13.2: |
Cross- and T-junctions / 7.13.3: |
Radial bends / 7.13.4: |
Frequency dependence of shunt post parameters / 7.13.5: |
Recommendations for the calculation of discontinuities / 7.14: |
Foreshortened open-circuits / 7.14.1: |
Series gaps / 7.14.2: |
Short-circuits / 7.14.3: |
Right-angled bends: mitring / 7.14.4: |
Steps in width / 7.14.5: |
Transverse slit / 7.14.6: |
The T-junction / 7.14.7: |
The asymmetric cross-junction / 7.14.8: |
Stripline discontinuities / 7.15: |
Bends / 7.15.1: |
Vias / 7.15.2: |
Junctions / 7.15.3: |
Parallel-coupled Lines and Directional Couplers / 8: |
Structure and applications / 8.1: |
Parameters and initial specification / 8.2: |
Coupled microstrip lines / 8.3: |
Characteristic impedances in terms of the coupling factor (C) / 8.4: |
Semi-empirical analysis formulas as a design aid / 8.5: |
An approximate synthesis technique / 8.6: |
A specific example: design of a 10 DB microstrip coupler / 8.7: |
Use of Bryant and Weiss' curves / 8.7.1: |
Synthesis using Akhtarzad's technique / 8.7.2: |
Comparison of methods / 8.7.3: |
Coupled-region length / 8.8: |
Frequency response / 8.9: |
Overall effects and Getsinger's model / 8.9.1: |
More accurate design expressions, including dispersion / 8.9.2: |
Complete coupling section response / 8.9.3: |
Coupler directivity / 8.10: |
Special coupler designs with improved performance / 8.11: |
The 'Lange' coupler / 8.11.1: |
The 'unfolded Lange' coupler / 8.11.2: |
Shielded parallel-coupled microstrips / 8.11.3: |
The use of a dielectric overlay / 8.11.4: |
The incorporation of lumped capacitors / 8.11.5: |
The effect of a dielectrically anisotropic substrate / 8.11.6: |
Microstrip multiplexers / 8.11.7: |
Multisection couplers / 8.11.8: |
Re-entrant mode couplers / 8.11.9: |
Patch couplers / 8.11.10: |
Thickness effects, power losses and fabrication tolerances / 8.12: |
Thickness effects / 8.12.1: |
Power losses / 8.12.2: |
Effects of fabrication tolerances / 8.12.3: |
Planar combline directional couplers / 8.13: |
Crosstalk and signal distortion between microstrip lines used in digital systems / 8.14: |
Choice of structure and design recommendations / 8.15: |
Design procedure for coupled microstrips, C [less than or equal] -3 dB / 8.15.1: |
Relatively large coupling factors (typically C [greater than or equal] -3dB) / 8.15.2: |
Length of the coupled region / 8.15.3: |
Coupled structures with improved performance / 8.15.4: |
Effects of conductor thickness, power losses and production tolerances / 8.15.6: |
Crosstalk between microstrip lines used in digital systems / 8.15.7: |
Post-manufacture circuit adjustment / 8.15.8: |
Power Capabilities, Transitions and Measurement Techniques / 9: |
Power-handling capabilities / 9.1: |
Maximum average power P[subscript ma] under CW conditions / 9.1.1: |
Peak (pulse) power-handling capability / 9.1.2: |
Coaxial-to-microstrip transitions / 9.2: |
Waveguide-to-microstrip transitions / 9.3: |
Ridgeline transformer insert / 9.3.1: |
Mode changer and balun / 9.3.2: |
A waveguide-to-microstrip power splitter / 9.3.3: |
Slot-coupled antenna waveguide-to-microstrip transition / 9.3.4: |
Transitions between other media and microstrip / 9.4: |
Instrumentation systems for microstrip measurements / 9.5: |
Measurement of substrate properties / 9.6: |
Microstrip resonator methods / 9.7: |
The ring resonator / 9.7.1: |
The side-coupled, open-circuit-terminated, straight resonator / 9.7.2: |
Series-gap coupling of microstrips / 9.7.3: |
Series-gap-coupled straight resonator pairs / 9.7.4: |
The resonant technique due to Richings and Easter / 9.7.5: |
The symmetrical straight resonator / 9.7.6: |
Resonance methods for the determination of discontinuities other than open-circuits / 9.7.7: |
Q-factor measurements / 9.8: |
Measurements on parallel-coupled microstrips / 9.9: |
Standing-wave indicators in microstrip / 9.10: |
Time-Domain Reflectometry (TDR) Techniques / 9.11: |
Interconnects and Filters in Passive RFICs and MICs / 10: |
Radio-Frequency Integrated Circuits (RFICs) / 10.1: |
On-chip resistors / 10.1.1: |
On-chip capacitors / 10.1.2: |
Planar inductors / 10.1.3: |
Terminations and attenuators in MIC technology / 10.2: |
Further thick and thin film passive components / 10.3: |
Branch-type couplers and power dividers / 10.3.1: |
Microstrip baluns / 10.3.2: |
A strategy for low-pass microwave filter design / 10.3.3: |
Bandpass filters / 10.3.4: |
A worked numerical example of a parallel-coupled bandpass filter / 10.3.5: |
CAD of parallel-coupled bandpass filters / 10.3.6: |
Improvements to the basic edge-coupled filter response / 10.3.7: |
Filter analysis and design including all losses / 10.3.8: |
Bandpass filters with increased bandwidth (] 15%) / 10.3.9: |
Further developments in bandpass filter design / 10.3.10: |
Microstrip radial stubs / 10.3.11: |
Dielectric resonators and filters using them / 10.3.12: |
Spurline bandstop filters / 10.3.13: |
Filters using synthetic periodic substrates (electromagnetic bandgap crystals) / 10.3.14: |
Passive MICs with switching elements / 10.3.15: |
Isolators and circulators / 10.3.16: |
Active Digital and Analogue ICs / 11: |
High-speed digital circuits / 11.1: |
Clock distribution / 11.2: |
Rotary clock distribution / 11.3: |
Conceptual basis / 11.3.1: |
Circuit model of a rotary clock / 11.3.2: |
Case study: a 3 GHz rotary clock / 11.3.3: |
Effect of copper interconnect / 11.3.4: |
RF and microwave active devices / 11.3.5: |
Yield and hybrid MICs / 11.5: |
Amplifiers / 11.6: |
Low-noise amplifier design strategy / 11.6.1: |
High-gain narrowband amplifier design / 11.6.2: |
Design example / 11.6.3: |
Custom hybrid amplifiers / 11.7: |
Standard MIC amplifier modules / 11.7.1: |
Custom MIC amplifier modules / 11.7.2: |
Balanced amplifiers / 11.8: |
Amplifiers using MMIC technology / 11.9: |
Design of a decade-bandwidth distributed amplifier / 11.9.1: |
W-band MMIC LNAs / 11.9.2: |
Microwave oscillators / 11.10: |
Example of a Dielectric Resonator Oscillator / 11.10.1: |
DRO oscillator developments / 11.10.2: |
MMIC oscillator example / 11.10.3: |
Active microwave filters / 11.11: |
Phase shifters / 11.12: |
Transmission Line Theory / Appendix A: |
Half-, quarter- and eighth-wavelength lines / A.1: |
Simple (narrowband) matching / A.2: |
Equivalent two-port networks / A.3: |
Chain (ABCD) parameters for a uniform length of loss-free transmission line / A.4: |
Parallel coupled transmission lines / A.5: |
Even and odd modes / A.5.1: |
Overall parameters for couplers / A.5.2: |
Analysis of parallel-coupled TEM-mode transmission lines / A.5.3: |
Q-Factor / Appendix B: |
Definition / B.1: |
Loaded Q-factor / B.2: |
External Q-factor of an open-circuited microstrip resonator / B.3: |
Outline of Scattering Parameter Theory / Appendix C: |
Network parameters / C.1: |
Scattering parameters / C.3: |
Scattering parameters for a two-port network / C.3.1: |
Definitions of two-port S-parameters / C.3.2: |
Evaluation of scattering parameters / C.3.3: |
Measurement of scattering parameters / C.3.4: |
S-parameter relationships in interpreting interconnect measurements / C.3.5: |
Multiport S-parameters / C.3.6: |
Signal-flow graph techniques and S-parameters / C.3.7: |
Scattering transfer (or T) parameters / C.4: |
Cascaded two-port networks: the utility of T parameters / C.4.1: |
Capacitance Matrix Extraction / Appendix D: |
References |
Index |