State-of-the-art Program on Compound Semiconductors (XXXIII)
InP HBT and HEMT Technology and Applications / A. Gutierrez-Aitken ; A. K. Oki ; D. C. Streit ; R. Lai ; D. Sawdai ; Y. C. Chen ; E. Kaneshiro ; R. Grundbacher ; P. C. Grossman ; T. Block ; P. Chin ; M. Barsky ; M. Wojtowicz ; H. C. Yen
Reduced Area InGaAs/InP HBT Device Fabrication for High Speed Circuit Applications / R. F. Kopf ; N. G. Weimann ; R. A. Hamm ; R. W. Ryan ; A. Tate ; M. A. Melendes ; R. Melendes ; Q. Lee ; G. Georgiou ; Y. Baeyens ; Y-K. Chen
Non-Crystallographic Wet Etching of Gallium Arsenide / A. G. Baca ; J. R. Laroche ; P. C. Chang ; F. Ren
Chemical Etching Behavior of n-AlGaAs/p-AlGaAs Structures under Different Light Illumination Conditions / K. Shigyo ; Z. Kawazu
Progress in Mid-IR Type-II Interband Cascade Lasers / R. Q. Yang ; J. L. Bradshaw ; J. D. Bruno ; J. T. Pham ; D. E. Wortman
Development of III-Nitrides for Near-Infrared Optoelectronics using Intersubband Transitions / H. M. Ng ; C. Gmachl ; S. N. G. Chu ; A. Y. Cho
Visible Vertical Cavity Light Emitters for Fibre Optical Communication / M. Saarinen ; V. Vilokkinen ; P. Sipilo ; N. Xiang ; S. Orsila ; M. Guina ; P. Melanen ; M. Dumitrescu ; P. Uusimaa ; P. Savolainen ; M. Pessa
Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors / N. Y. Li ; E. Armour ; P. R. Sharps ; H. Q. Hou
Antimonide-Based Long-Wavelength Lasers on GaAs Substrates / J. F. Klem ; O. Blum
Novel MOS Schemes for Electronic Devices with Photoanodically Grown Oxides on GaN Surfaces / D. Mistele ; T. Rotter ; R. Ferretti ; H. Klausing ; F. Fedler ; O. K. Semchinova ; J. Stemmer ; J. Aderhold ; J. Graul
GaN Power Devices / S. J. Pearton ; A. P. Zhang ; G. Dang ; X. A. Cao ; K. P. Lee ; H. Cho ; B. P. Gila ; J. W. Johnson ; C. Monier ; C. R. Abernathy ; J. Han ; J.-I. Chyi ; C.-M. Lee ; T.-E. Nee ; C.-C. Chuo ; G. C. Chi
Fabrication of an Integrated Optics 1 to 2 Optical Switch / Y. Hernandez ; J.-P. Vilcot ; D. Decoster ; J. Chazelas
Optical Characterization of Acceptor Implantation in GaN / B. J. Skromme ; G. L. Martinez ; A. Suvkhanov ; L. Krasnobaev ; D. B. Poker
Cantilever Epitaxy: A Simple Lateral Growth Technique for Reducing Dislocation Densities in GaN and Other Nitrides / C. I. H. Ashby ; C. C. Willan ; N. A. Missert ; P. P. Provencio ; D. M. Follstaedt ; G. M. Peake ; L. Griego
The Formation Mechanism of SiC/Si Interface in the Growth of SiC Films on Si / K. S. Nahm ; K. C. Kim ; C. I. Park ; J. I. Roh
SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors / B. Luo ; J. I. Chyi ; T. E. Nee ; C. M. Lee ; C. C. Chuo ; T. J. Anderson
The Effect of N2 Plasma Damage on DC and RF Characteristics of HEMTs / V. P. Trivedi ; C. H. Hsu ; X. Cao ; C. S. Wu ; M. Hoppe ; J. Sasserath ; J. W. Lee
High Speed Devices for Wireless Applications II
III V Enhancement Mode Field Effect Transistor Technologies for Cellular Applications / J. Costa
Indium Phosphide HBT Device Parameter Extraction for Spice Modeling and Process Optimization / J.-M. Kuo ; M. Melendes ; Y. K. Chen
The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors
Fabrication and Materials Characterization of Pulsed Laser Deposited Nickel Silicide Ohmic Contacts to 4H n-SiC / M. W. Cole ; P. C. Joshi ; C. W. Hubbard ; E. Ngo ; J. D. Demaree ; J. K. Hirvonen ; M. Wood ; M. Ervin ; C. J. K. Richardson ; M. H. Wisnioski
Author Index
Subject Index
Preface
Symposium Organizers
State-of-the-art Program on Compound Semiconductors (XXXIII)
Electrical Characterization Techniques for Semiconductor-Silicon Dioxide Interface - A Review / M.J. Deen
Si-SiO[subscript 2] Interface Trap Properties and Dependence with Oxide Thickness and with Electrical Stress in MOSFET's with Oxides in the 1-2 nm Range / D. Bauza ; F. Rahmoune
EPR Studies of SiC/SiO[subscript 2] Interfaces in n-type 4H-and 6H- Oxidized Porous SIC / H.J. von Bardeleben ; J.L. Cantin ; M. Mynbaeva ; S.E. Saddow ; Y. Shishkin ; R.P. Devaty ; W.J. Choyke
Related Oxides / II.：
Novel Germanium Technology and Devices for High Performance MOSFETs and Integrated On-Chip Optical Clocking / K.C. Saraswat ; C.O. Chui ; P.C. McIntyre ; B.B. Triplett
Properties of Ultrathin High-k Dielectrics on Si Probed by Electron Spin Resonance-Active Defects: Interfaces and Interlayers / A. Stesmans ; V.V. Afanas'ev
Role of Ultra Thin Silicon Oxide Interfacial Layer in High Performance High Dielectric Constant Gate Dielectrics / R. Singh ; M. Fakhruddin ; K.F. Poole ; S.V. Kondapi ; A. Gupta ; J. Narayan ; S. Kar
Quantum Mechanical Modeling of Capacitance-Voltage and Current-Voltage Behavior for SiO[subscript 2] and High-k Dielectrics / L.F. Register ; Y.-Y. Fan ; S.P. Mudanai ; S.K. Banerjee
Thermally Driven Atomic Transport in Silicon Oxynitride and High-k Films on Silicon / I.J.R. Baumvol ; F.C. Stedile ; J. Morais ; C. Krug ; C. Radtke ; E.B.O da Rosa ; K.P. Bastos ; R.P. Pezzi ; L. Miotti ; G.V. Soares
Investigations of the Structure and Stability of Alternative Gate Dielectrics / S. Stemmer ; Z.Q. Chen ; P.S. Lysaght ; J.A. Gisby ; J.R. Taylor
Comparison of Contamination Effects in Silicon Oxide with that in Hafnium Oxide and Zirconium Oxide Gate Dielectrics / F. Shadman ; P. Raghu ; N. Rana ; C. Yim ; E. Shero
Characteristics of Metal Gate MOS Capacitor with Hafnium Oxynitride Thin Film / K.-J. Choi ; S.-G. Yoon
Charge Trapping in High-Dose Ge-Implanted and Si-Implanted Silicon-Dioxide Thin Films / A.N. Nazarov ; I.N. Osiyuk ; I.P. Tyagulskii ; V.S. Lysenko ; T. Gebel ; W. Skorupa
Film Application / Device Characterization / Reliability / III.：
What Can Low-frequency Noise Learn us About the Quality of Thin-gate Dielectrics? / E. Simoen ; A. Mercha ; C. Claeys
Analysis of Short-channel MOSFET Behavior after Gate Oxide Breakdown and its Impact on Digital Circuit Reliability / G. Groeseneken ; B. Kaczer ; R. Degraeve
Cyanide Treatment to Improve Electrical Characteristics of Si-based MOS Diodes with an Ultrathin Oxide Layer / H. Kobayashi ; T. Kobayashi ; A. Asano ; O. Maida ; M. Takahashi
Process Dependence of Negative Bias Temperature Instability in PMOSFETS / S. Prasad ; E. Li ; L. Duong
Silicon Dioxide Insulating Films for Silicon-Germanium Technology / A. Vijh ; V.J. Kapoor ; R.L. Patterson ; J.E. Dickman
New Reliability Issues of CMOS Transistors with 1.3nm Thick Gate Oxide / M.F. Li ; B.J. Cho ; G. Chen ; W.Y. Loh ; D.L. Kwong
Improved Performance With Low Temperature Silicon Nitride Spacer Process / C.M. Reddy ; S.G.H. Anderson
Interface Studies / Defects / IV.：
Growth of SiO[subscript 2] at the Sc[subscript 2]O[subscript 3]/Si(100) Interface During Annealing / G.A. Botton ; E. Romain ; D. Landheer ; X. Wu ; M.-Y. Wu ; M. Lee ; Z.-H. Lu
A Review of Defect Generation in the SiO[subscript 2] and at Its Interface with Si / J.F. Zhang
Dipoles in SiO[subscript 2]: Border Traps or Not? / D.M. Fleetwood ; S.N. Rashkeev ; Z.Y. Lu ; C.J. Nicklaw ; J.A. Felix ; R.D. Schrimpf ; S.T. Pantelides
Stabilities and Electronic States of Incorporated Nitrogen Atoms at the Interface of SiO[subscript 2]/Si(001) / T. Yamasaki ; C. Kaneta
Electrical Properties and the Reliability of Silicon Nitride Gate Dielectrics Formed by Various Processes and Annealing Treatments / K.-S. Chang-Liao ; J.Y Pan ; C.L. Cheng ; T.K. Wang
Electronically Active Defects in Utra-thin Oxynitride Gate Dielectrics / D.A. Buchanan
Nitrogen Content and Interface Trap Reduction in SiO[subscript 2]/4H-SiC / K. McDonald ; R.A. Weller ; L.C. Feldman ; G.Y Chung ; C.C. Tin ; J.R. Williams
Cathodoluminescence of Thin Films of Silicon Oxide on Silicon / M.V. Zamoryanskaya ; V.I. Sokolov ; I.M. Kotina ; C.G. Konnikov
Predictive Simulation of Void Formation during the Deposition of Silicon Nitride and Silicon Dioxide Films / C. Heitzinger ; A. Sheikholeslami ; H. Puchner ; S. Selberherr
Film Preparation and Characterization I / V.：
Direct-Write Deposition of Silicon Oxide - The Express Lane towards patterned thin Films / H.D. Wanzenboeck ; S. Harasek ; E. Bertagnolli ; M. Gritsch ; H. Hutter ; J. Brenner ; H. Stoeri ; U. Grabner ; G. Hammer ; P. Pongratz
Comprehensive Optical and Compositional Characterization of Silicon-based Thin Films for Photonics / J. Wojcik ; E.A. Irving ; J.A. Davies ; W.N. Lennard ; P. Mascher
Hydrogenated Amorphous Silicon Nitride Deposited by Dc Magnetron Sputtering / K. Mokeddem ; M. Sayhi ; M. Aoucher ; A.C. Chami ; M. Abdessalem
Properties of Annealed Silicon Oxynitride Layers for Optical Applications / K. Worhoff ; G.M. Hussein ; C.G.H. Roeloffzen ; L.T.H. Hilderink
Optimum Structure of Deposited Ultra Thin Silicon Oxynitride Film to Minimize Leakage Current / K. Muraoka ; K. Kurihara ; N. Yasuda ; H. Satake
Plasma Damage in Ultra-thin Gate Oxide Induced by Dielectric Deposition Processes: An Overview on Main Mechanisms and Characterization Techniques / J.-P. Carrere ; J.-C. Oberlin ; S. Bruyere ; P. Ferreira
Electrical Characterization of Thin Oxide Layers by Impedance Spectroscopy Using Silicon/Oxide/Electrolyte (SOE) Structures / M. Chemla ; V. Bertagna ; R. Erre ; F. Rouelle ; S. Petitdidier ; D. Levy
Scaling / Film Preparation and Characterization II / VI.：
Scaling Issues for Advanced SOI Devices: Gate Oxide Tunneling, Thin Buried Oxide, and Ultra-Thin Films / J. Pretet ; A. Ohata ; F. Dieudonne ; F. Allibert ; N. Bresson ; T. Matsumoto ; T. Poiroux ; J. Jomaah ; S. Cristoloveanu
The Effect of the Oxide Network Structure on the Irradiation Behavior of SiO[subscript 2] Films on Silicon / A.G. Revesz ; H.L. Hughes
Atomistic Characterization of Radical Nitridation Process on Si(100) Surfaces / Y. Yasuda ; A. Sakai ; S. Zaima
Atomic, Electronic Structure and Charge Transport Mechanism in Silicon Nitride and Oxynitride / V.A. Gritsenko ; K.A. Nasyrov
Decoupled Plasma Nitridation of Ultra-Thin Gate Oxides for 60-90 nm Technologies / M. Bidaud ; F. Boeuf ; C. Dachs ; C. Parthasarathy ; F. Guyader
A Neutron Reflectivity Study of Silicon Oxide Thin Films / A. Menelle ; M.-L Saboungi
Rapid Thermal and Anodic Oxidations of LPCVD Silicon Nitride Films / Y.-P. Lin ; J.-G. Hwu
MOSFET Degradation with Reverse Biased Source and Drain During High-Field Injection through Thin Gate Oxide / B. Patel ; R.K. Jarwal ; D. Misra
Modeling and Electrical Characterization of MOS Structures with Ultra-Thin Gate Oxide / R. Clerc ; G. Ghibaudo
Conduction Modeling of Thick Double-Layer Nitride/Oxide Dielectrics / S. Evseev
Contribution of Individual Process Steps on Particle Contamination during Plasma CVD Operation / H. Setyawan ; M. Shimada ; Y. Imajo ; K. Okuyama
Plasma Nitridation Optimization for Sub-15A Gate Dielectrics / F.N. Cubaynes ; J. Schmitz ; C. van der Marel ; J.H.M. Snijders ; A. Veloso ; A. Rothschild ; C. Olsen ; L. Date
Recovery and Reversibility of Electrical Instabilities in Double-Layer Dielectric Films / A. Cacciato
Low-Temperature Oxidation for Gate Dielectrics of Poly-Si TFTs using High-Density Surface Wave Plasma / K. Azuma ; M. Goto ; T. Okamoto ; Y. Nakata
Characterization of MIS Tunnel Junctions by Inelastic Electron Tunneling Spectroscopy (IETS) / C. Petit ; G. Salace ; D. Vuillaume
Authors Index
Subject Index
Preface
Interface Characterization / I.：
Electrical Characterization Techniques for Semiconductor-Silicon Dioxide Interface - A Review / M.J. Deen
Preface: ALTECH 2003 "Analytical Techniques for Semiconductor Materials and Process Characterization IV"
"Impurities: Metals, Non-Metals and Organics" / Part 1：
Copper Behavior in Bulk Silicon and Associated Characterization Techniques / T. Heiser ; A. Belayachi ; J.-P. Schunck
Quantification Issues of Trace Metal Contaminants on Silicon Wafers by Means of TOF-SIMS and ICP-MS / P. Rostam-Khani ; P. Vullings ; G. Noij ; W. Claassen
Determination of the Aluminum-Induced Oxide Charge by AC Surface Photovoltage Measurements in N-Type Silicon / H. Shimizu ; M. Ikeda ; R. Shin
Characterization of Heavy Metal Contamination by Capacitance-Frequency Method / K. Hara ; M. Takahashi ; H. Yoshida ; S. Kishino
In-line Copper Contamination Monitoring Using Non-Contact Q-V-SPV Techniques / M. Bohringer ; J. Hauber ; S. Passefort ; K. Eason
Recent Developments in Nuclear Methods in Support of Semiconductor Characterization / B. Brijs ; H. Bender ; C. Huyghebaert ; T. Janssens ; W. Vandervorst ; K. Nakajima ; K. Kimura ; A. Bergmaier ; G. Dollinger ; J. A. van den Berg
Determination of Oxygen in Semiconductor Silicon by Gas Fusion Analysis GFA--Historical and Future Trends / S. Pahlke
High Sensitivity Measurement of Nitrogen in Czochralski Silicon / M. Porrini ; M. G. Pretto ; R. Scala ; V. V. Voronkov
Spark Source Mass Spectrometric Analysis of Low Carbon Contents in Crystalline Silicon / B. Wiedemann ; J. D. Meyer ; H. C. Alt ; H. Riemann
Hydrogen Contamination and Defect Generation in p-type Silicon and Silicon-Germanium Schottky Barrier Test Structures / F. Volpi ; A. R. Peaker ; I. Berbezier ; A. Ronda
Analysis of Oxygen Thermal Donor Formation in n-type Cz-Silicon / J.M. Rafi ; E. Simoen ; C. Claeys ; A. Ulyashin ; R. Job ; W. Fahrner ; J. Versluys ; P. Clauws ; M. Lozano ; F. Campabadal
The Application of Synchrotron Radiation to Semiconductor Materials Characterization / R. Barrett
Ultra-trace Analysis of Light Elements and Speciation of Minute Organic Contaminants on Silicon Wafer Surfaces by means of TXRF in Combination with NEXAFS / B. Beckhoff ; R. Fliegauf ; G. Ulm ; J. Weser ; G. Pepponi ; C. Streli ; P. Wobrauschek ; T. Ehmann ; L. Fabry ; C. Mantler ; B. Kanngiesser ; W. Malzer
TXRF Characterization of Inhomogneous Solids: Influence of Surface Morphology / N. Alov ; K. Oskolok ; A. Wittershagen ; B. O. Kolbesen
Characterization of Trace Organic Contamination on Silicon Surfaces in Semiconductor Manufacturing / K. Saga ; T. Hattori
Characterization of Advanced Semiconductor Materials by Thermal Desorption Mass Spectrometry with Atmospheric, Pressure Ionization / L. Carbonell ; G. Vereecke ; S. Van Elshocht ; M. Caymax ; M. Van Hove ; K. Maex ; P. Mertens
Analysis of Trace VOCs' in Clean Room Air with PDMS/Carboxen SPME Fibers / L. Tuduri ; V. Teetaert ; V. Desauziers ; E. Coffre ; P. Dupont ; M. Camenzind
Cleaning Chemistry with Complexing Agents (CAs): Direct Concentration Measurement of CAs with HPLC / S. Metzger ; B.O. Kolbesen
Complexing Agents (CAs) for Semiconductor Cleaning Chemistries: Characterization of CA Lifetimes by UV/VIS-Spectroscopy / O. Doll
"Thin Films" / Part 2：
Stress Management in IC Manufacturing: [mu]-Raman Spectroscopy Revisited / L.F.T. Kwakman ; D. Delille ; M. Mermoux ; A. Crisci ; G. Lucazeau
Characterization and Metrology of Novel Materials Involved in Advanced CMOS Processes / C. Wyon
Physical Characterization of Thin HfO[subscript 2] Layers by the Combined Analysis with Complementary Techniques / T. Conard ; O. Richard ; J. Petry ; C. Defranoux ; P. Boher ; N. Rochat ; P. Mack ; J. Wolstenholme ; R. Vitchev ; L. Houssiau ; J-J. Pireaux
Analytical Characterization of Process Parameter Influence on the Initial Growth and Crystallinity of Atomic Layer Deposition HfO[subscript 2] Thin Films / D. Blin ; G. Rolland ; P. Holliger ; F. Martin ; J.-F. Damlencourt ; T. Lardin ; P. Besson ; S. Haukka ; M.-N. Semeria
Application of X-Ray Fluorescence Spectrometry in Characterization of High-k Ultra-Thin Films / C. Zhao ; F. Dortu ; S. DeGendt ; M. Heyns ; W. Besling ; J. W. Maes
Characterization of Nano-Laminate Structure Using Grazing Incidence XRD and ATR-FTIR / V. Consier ; G. Roebben ; O. Van Der Biest
High-Resolution Analysis of the HfO[subscript 2]-SiO[subscript 2] Interface by Soft X-Ray Photoelectron Spectroscopy / O. Renault ; D. Samour ; J. -F. Damlencourt ; A. -M. Papon ; S. Marthon ; N. T. Barrett
Ag Electrodeposition on n-InP Followed in Situ by Photoluminescence / I. Gerard ; C. Mathieu ; P. Tran-Van ; A. Etcheberry
Characterization by Electrochemistry and Chemical Surface Analysis of an Oxide Film on n-InP / N.C. Quach ; N. Simon
Charging Effects on Ferroelectric SBT Thin Films Imaged by Non-Contact Electrostatic Force Microscopy / N. Junghans
Two Dimensional Carrier Profiling Using Scanning Capacitance Microscopy / N. Duhayon ; T. Clarysse ; D. Alvarez ; P. Eyben ; M. Fouchier ; L. Hellemans
"Non-Destructive and Optical Methods" / Part 3：
Spectroscopic Ellipsometry in the VUV Range Applied to the Characterization of Atomic Layer Deposited HfO[subscript 2], Al[subscript 2]O[subscript 3] and HfAIO[subscript x] Thin Layers for High k Dielectrics / S. Bourtauld ; J. P. Piel
Optical Characterisation of High-? Materials Deposited by ALCVD / E. Bellandi ; B. Crivelli ; A. Elbaz ; M. Alessandri
Macroscopic and Microscopic Photoluminescence Mapping System Applicable to 300 mm Wafers / Z. Li ; M. Tajima ; R. Shimidzu
In-Line and Non-Destructive Analysis of Epitaxial Si[subscript 1-x-y]Ge[subscript x]C[subscript y] by Spectroscopic Ellipsometry and Comparison with Other Established Techniques / R. Loo ; P. Meunier-Beillard ; R. Delhougne ; T. Koumoto ; L. Geenen
Study by Spectroellipsometry of the InP Surface Evolution by Cerium Acidic Solution / B. Canava ; J. Vigneron ; M. Stchakovsky ; J. P. Gaston
Characterisation of Bulk and Surface Properties in Semiconductors Using Non-Contacting Techniques / A. Castaldini ; D. Cavalcoli ; A. Cavallini ; M. Rossi
"Characterization of Defects, Technology and Devices" / Part 4：
Focused Ion Beam Analysis of Cu/Low-k Metallization Structures
Preface: ALTECH 2003 "Analytical Techniques for Semiconductor Materials and Process Characterization IV"
"Impurities: Metals, Non-Metals and Organics" / Part 1：
Copper Behavior in Bulk Silicon and Associated Characterization Techniques / T. Heiser ; A. Belayachi ; J.-P. Schunck
Novel Waveguide Photodetectors on InP with Integrated Light Amplification / J. Piprek ; D. Pasquariello ; D. Lasaosa ; J.E. Bowers
Improvement of Kink Characteristics of 850nm AlGaAs/GaAs Implant Vertical Cavity Emitting Lasers Utilizing Silicon Implantation Induced Disordering / H.C. Kuo ; Fang-I Lai ; Tao-Hung Hsueh ; Ya-hsien Chang ; Wen-chun Shu ; Li-Hung Lai ; S.C Wang
Effect of Post-Oxidation Annealing on VCSEL Device Performance / N.C Das ; W. Chang
Low Voltage Operation Phototransistor with InGaP/AlGaAs/GaAs Composite Emitter / S.W. Tan ; W.T. Chen ; M.Y. Chu ; W.S. Lour
III-V Devices and Processing / Session 2：
Observation of Current Gain Collapse in Large-area HBT with Rectangular Emitter and Etched Base / M.-K. Tsai ; S.-W. Tan ; W.-S. Lour ; Y.-J. Yang
Characteristics of Sulfur and InGaP-passivated InGaP/GaAs Heterojunction Bipolar Transistors
Interconnect Copper Metallization of InGaP HBT's using WN[subscript x] as the Diffusion Barrier / Shang-Wen Chang ; Edward Yi Chang ; Cheng-Shih Lee
Solvent-affected Chemistry at GaAs/sulfide Solution Interface / Mikhail V. Lebedev ; Thomas Mayer ; Wolfram Jaegermann
InP Electrochemistry / Session 3：
Anodic Behavior of InP: Film Growth, Porous Structures, and Current Oscillations / D.N. Buckley ; C. O'Dwyer ; E. Harvey ; T. Melly ; M. Serantoni ; D. Sutton ; S.B. Newcomb
A Mechanistic Study of Anodic Formation of Porous InP
Growth of Anodic Oxides on n-InP Studied by Electrochemistry and Surface Analysis: Correlation between Oxidation Methods and Passivating Properties / N. Simon ; N.C. Quach ; A. Etchberry
Localized Photoetching of n-InP, at Open-circuit Potential / Catherine Debiemme-Chouvy ; Anne Quennoy ; Isabelle Gerard
Poster Session
Investigation of Defect Passivation in 4H-SiC using Hydrogen Plasma and Effect of Post-Annealing / Myung Yoon Um ; In Sang Jeon ; Da Il Eom ; Bum Seok Kim ; Ho Keun Song ; Hoon Joo Na ; Dae Hwan Kim ; Jae Kyeong Jeong ; Hyeong Joon Kim
HRTEM Study of SiC Buried Layer formed by C+ Implantation in Silicon / Yumei Xing ; Yuehui Yu ; Zixin Lin
(Photo-)Electrochemistry at n-GaN Grown on Sapphire and on Si: A Comparitive Study / I.M. Huygens ; K. Strubbe
MOCVD Growth of InP/InGaAlAs Distributed Bragg Reflectors / J.Y. Tsai ; T.C. Lu ; S.C. Wang
Very Low Temperature Growth of c-axis oriented ZnO Thin Film on Si Substrates / Hyoun Woo Kim ; Kwang Sik Kim ; Chongmu Lee
Fabrication and NO2 Surface Photo Voltage Sensor Properties of Nanoporous Tin-Silica Film / Brian Yuliarto ; HaoShen Zhou ; Takeo Yamada ; Itaru Honma ; Keisuke Asai
Emerging Materials / Session 4：
Man-made Quantum Structures: From Superlattices to Quantum Dots / Raphael Tsu
Effects of Composition and Layer Thickness on the Magnetic and Structural Characteristics of GaMnN / G.T. Thaler ; M. Overberg ; R. Frazier ; C.R. Abernathy ; S.J. Pearton ; F. Ren ; Y.D. Park ; R. Rairigh ; J. Kelly ; J.S. Lee ; N. Theodoropoulou ; A.F. Hebard|p141
Diamond--the Next Generation Material for High Power Electronics? / A. Aleksov ; M. Schreck ; P. Schmid ; E. Kohn
III-Nitride Light Emitting Diodes / Session 5：
Deep Ultraviolet Light Emitting Diodes using AlGaN Quantum Well Active Region / M. Asif Khan ; Maxim Shatalov ; Vinod Adivarahan ; Jain Ping Zhang ; Ashay Chitnis ; Grigory Simin ; Jinwei Yang
Dramatically Improved Current Spreading in UV LED's via Si Delta-doping in the n-AlGaN Cladding Layer / S.F. LeBoeuf ; X.A. Cao ; L.B. Rowland ; J.J. Flynn ; G.R. Brandes
Carrier Capture and Recombination at Localized States in InGaN/GaN Light-Emitting Diodes / J.L. Garrett ; S.D. Arthur ; D.W. Merfeld
Wide Bandgap Materials and Electronic Devices / Session 6：
Instabilities in GaN based FET Structures--Nature and Alternative Structures / M. Neuburger ; I. Daumiller ; A. Krtschil ; A. Krost ; J. Van Nostrand ; T. Jenkins
AlGaN Power Rectifiers / J. Kim ; K. Baik ; B.P. Gila ; Y. Irokawa ; J.-I. Chyi ; S.S. Park ; Y.J. Park
Physics of Electron Injection-Induced Effects in III-Nitrides / Leonid Chernyak ; William Burdett
DC Characteristics of AlGaN/GaN Heterostructure Field-effect Transistors on Free-Standing GaN Substrates / B. Luo ; C.-C. Pan ; G.-T. Chen ; J.I. Chyi ; Y.J Park
Innovative Substrate Solutions for Wide Band Gap Materials: the Smart Cut Approach / F. Letertre ; N. Daval ; F. Templier ; L. DiCioccio ; C. Richtarch ; B. Faure ; A.M. Cartier ; I. Matko
Optical Properties of III-Nitride Materials / Session 7：
Microcathodoluminescence Characterization of III-Nitride Heterojunctions and Devices / L.J. Brillson ; G.H. Jessen ; S.H. Goss ; X.L. Sun ; S.T. Bradley ; B.D. White ; P.E. Smith ; T.E. Levin ; A.P. Young ; D.C. Look ; J.E. Van Nostrand ; G.D. Via ; J.K. Gillespie ; R.W. Dettmer ; J.S. Sewell ; R. Fitch
New Spectroscopic Data of Erbium Ions in GaN Thin Films / F. Pelle ; F. Auzel ; J.M. Zavada ; D.S. Lee ; A.J. Steckl
Spectroscopic Ellipsometry Applied to the Characterization of GaN and AlGaN/GaN Heterostructures / P. Boher ; S. Bourtault ; J.P. Piel
Infrared Photocurrent Spectroscopy of Epitaxial III-Nitride Materials / Edward B. Stokes ; Steven F. LeBoeuf
Fabrication and Characterization of GaN Nanorods / Chang-Chin Yu ; Jung-Wai Chang ; Chia-Feng Lin
Subject Index
Preface
III-V Optoelectronics / Session 1：
Novel Waveguide Photodetectors on InP with Integrated Light Amplification / J. Piprek ; D. Pasquariello ; D. Lasaosa ; J.E. Bowers
Thin film transfer by Smart Cut technology beyond SOI / C. Mazure
Quality improvement of SIMOX wafers by utilizing nitrogen-doped Cz Silicon crystal / K. Kawamura ; I. Hamaguchi ; T. Sasaki ; S. Takayama ; Y. Nagatake ; A. Matsumura
Ultrathin SOI wafer fabrication and metrology / C. Maleville
Replacing the BOX with buried alumina: improved thermal dissipation in SOI MOSFETs / K. Oshima ; S. Cristoloveanu ; B. Guillaumot ; G. Le Carval ; H. Iwai ; M.S. Kang ; Y.H. Bae ; J.W. Kwon ; S. Deleonibus ; J.H. Lee
Studies on novel SOI-structure with AIN film as buried insulator / C. Lin ; M. Zhu ; C. Men ; Z. An ; M. Zhang
Fabrication of sub-micron active layer SSOI substrates using ion splitting and wafer bonding technologies / F.H. Ruddell ; M.F. Bain ; S. Suder ; R.E. Hurley ; B.M. Armstrong ; V.F. Fusco ; H.S. Gamble
Back-end analysis of SOI substrates incorporating metallic layers using a novel non-destructive picosecond ultrasonic technique / N.D. McCusker ; P. McCann ; W.A. Nevin
Silicon-on-insulator-multilayer structure fabricated by epitaxial layer tranfer / W. Liu ; X. Xie ; Q. Lin ; Z. Zhang
Status of 300 mm SOI material: comparisons with 200 mm / H. Hovel ; M. Almonte ; P. Tsai ; J.D. Lee ; S. Maurer ; R. Kleinhenz ; D. Schepis ; R. Murphy ; P. Ronsheim ; A. Domenicucci ; J. Bettinger ; D. Sadana
A study on selective Si[subscript 0.8]Ge[subscript 0.2] etch using polysilicon etchant diluted by H[subscript 2]O for three-dimensional Si structure application / S.M. Kim ; C.W. Oh ; J.D. Choe ; C.S. Lee ; D.G. Park
Estimation of oxygen dose by spectroscopic ellipsometry and investigation of oxide formation mechanism by FT-IR for 160[superscript +]-implanted Si wafers / H. Iikawa ; M. Nakao ; K. Izumi
Development of SiC substrate with buried oxide layer for electron-photon merged devices / S. Hirai
Very low Schottky barrier to n-type silicon with PtEr-stack silicide / X. Tang ; J. Katcki ; E. Dubois ; J. Ratajczak ; G. Larrieu ; P. Loumaye ; O. Nisole ; V. Bayot
Defects and electrical consequences in SOI buried oxides / H.J. Hovel
Relaxed SiGe-on-insulator substrates through implanting oxygen into pseudomorphic SiGe/Si heterostructure / Y. Wu ; Z. Di ; P. Chu
Effect of silicon nitride and silicon dioxide bonding on the residual stress in layer-transferred SOI / A. Tiberj ; J. Camassel ; N. Planes ; Y. Stoemenos ; H. Moriceau ; O. Rayssac
Double-Gate and Various SOI Devices / Part II：
Fully depleted SOI process and device technology for digital and RF application / F. Ichikawa ; Y. Nagatomo ; Y. Katakura ; S. Itoh ; H. Matsuhashi ; N. Hirashita ; S. Baba
Emerging silicon-on-nothing (SON) devices technology / T. Skotnicki ; S. Monfray ; C. Fenouillet-Beranger
60-nm gate length SOI CMOS technology optimised for "System-on-a-SOI-chip" solution / K. Imai ; S. Maruyama ; T. Suzuki ; T. Kudo ; S. Miyake ; M. Ikeda ; T. Abe ; S. Masuda ; A. Tanabe ; J-W. Lee ; K. Shibahara ; S. Yokoyama ; H. Ooka
High performance strained-SOI CMOSFETs / S-I. Takagi ; T. Mizuno ; T. Tezuka ; N Sugiyama ; T. Numata ; K. Usuda ; Y. Moriyama ; S. Nakaharai ; J. Koga ; T. Maeda
Real space transfer devices in SOI / S. Luryi
Issues in high performance FinFET and FDSOI transistor design / J. Kedzierski ; M. Ieong ; E. Nowak
Extremely scaled FinFETs and ultra-thin body SOI CMOS Devices / S. Balasubramanian ; L. Chang ; Y.-K. Choi ; D. Ha ; J. Lee ; P. Ranade ; S. Xiong ; J. Bokor ; C. Hu ; T.-J. King
Ultralow-power FD-SOI design for future mobile systems / T. Douseki ; H. Kyuragi
Status and development of future PD/SOI MOSFETs / S. Krishnan
Investigation of charge control related performances in double-gate SOI MOSFETs / V. Kilchytska ; T.M. Chung ; H. van Meer ; K. de Meyer ; J.P. Raskin ; D. Flandre
Substrate bias effects in SOI FinFETs / J. Pretet ; F. Dauge ; A. Vandooren ; L. Mathew ; B.-Y. Nguyen ; J. Jomaah
The nanoscale double-gate MOSFET for analog applications / D. Jimenez ; B. Iniguez ; J. Sune ; J.J. Saenz
The benefit of SOI technologies for low-voltage RFID applications / P. Villard ; B. Gomez ; J. De Pontcharra ; D. Save ; S. Chouteau ; E. Mackowiak
A novel CMOS memory cell architecture for ultra-low power applications operating up to 280[degree]C / D. Levacq ; V. Dessard
Multi-fin double-gate MOSFET fabricated by using (110)-oriented SOI wafers and orientation-dependent etching / Y. Liu ; K. Ishii ; T. Tsutsumi ; M. Masahara ; H. Takashima ; E. Suzuki
Impact of the graded-channel architecture on double gate transistors for high-performance analog applications / M.A. Pavanello ; J.A. Martino ; A. Kranti ; J.-P. Raskin
Characteristics of two types of MEMS resonator structures in SOI applications / S. Myllymaki ; E. Ristolainen ; P. Heino ; A. Lehto ; K. Varjonen
High-voltage super-junction SOI-LDMOSFETs with reduced drift length / J.M. Park ; T. Grasser ; S. Selberherr
Comparative study of the dynamic performance of bulk and FDSOI MOSFET by means of a Monte Carlo simulation / R. Rengel ; D. Pardo ; M.J. Martin
Partially depleted SOI dynamic-threshold MOSFET for low-voltage and microwave applications / M. Dehan ; D. Vanhoenacker
Figures-of-merit of intrinsic, standard-doped and graded-channel SOI and SOS MOSFETs for analog baseband and RF applications
Comparison of SOI, poly-Si TFT and bulk Si MOS performance using gm/ID methodology / K. Takatori
Optimization of ultra-thin body, fully-depleted SOI device, with raised source/drain / J. Egley ; B. Winstead ; E. Verret ; B. White
Device Physics and Modeling / Part III：
Device models for silicon-on-insulator (SOI) insulated-gate PN-junction devices for electrostatic discharge (ESD) protection circuit design / Y. Omura ; S. Wakita
Evidence for a "linear kink effect" in ultra-thin gate oxide SOI MOSFETs / A. Mercha ; E. Simoen ; J.-M. Rafi ; C. Claeys ; N. Lukyanchikova ; M. Petrichuk ; N. Garbar
An accurate model for threshold voltage and S-factor of partially-depleted surrounding gate transistor (PD-SGT) / Y. Yamamoto ; M. Hioki ; R. Nishi ; H. Sakuraba ; F. Masuoka
Reduction of pass-gate leakage by silicon-thickness thinning in double-gate MOSFETs / W. Sakamoto ; T. Endoh
Accurate and efficient method for accelerated history effect simulations / T. Poiroux ; G. Labourey ; P. Flatresse ; O. Faynot ; M. Belleville ; D. Souil ; B. Giffard
Electron mobility in strained-Si inversion layers grown on SiGe-on-insulator substrates / F. Gamiz ; J.B. Roldan ; A. Godoy ; P. Cartujo-Cassinello ; F. Jimenez-Molinos
Strained Si/SiGe channels: a new performance advantage for PD/SOI CMOS / W. Zhang ; J.G. Fossum
Modeling of Coulomb scattering of electrons in ultrathin symmetrical DG SOI transistor / J. Walczak ; B. Majkusiak
Comparison of partially and fully depleted SOI transistors down to the sub 50-nm-gate length regime / L. Dreeskornfeld ; J. Hartwich ; E. Landgraf ; R.J. Luyken ; W. Rosner ; T. Schulz ; M. Stadele ; D. Schmitt-Landsiedel ; L. Risch
Saturation current model for the n-channel G[superscript 4]-FET / B. Dufrene ; B. Blalock ; M. Mojarradi ; E. Kolawa
Quasi-three-dimensional device simulation of fully depleted MOSFET/SOI focused on surface roughness
Threshold voltage quantum simulations for ultra-thin silicon-on-insulator transistors / J. Lolivier ; F. Balestra
Impact of quantum-mechanical effects on the double-gate MOSFET characteristics / G. Ghibaudo
Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 [mu]m floating-body partially-depleted SOI MOSFET at low temperature / K. De Meyer
SOI thermal resistance and its application to thermal modeling of SOI MOSFETs / M.-C. Cheng ; F. Yu
Fully-quantum theory of SOI MOSFETs / T.J. Walls ; V.A. Sverdlov ; K.K. Likharev
Oxidation simulation of silicon nanostructure on silicon-on-insulator substrates / M. Uematsu ; H. Kageshiwa ; K. Shiraishi
Characterisation and Reliability Issues / Part IV：
Characterization of SOI wafers by photoluminescence spectroscopy, decay and micro/macro-mapping / M. Tajima
Feasibility of surface photovoltage based characterization of ultra-thin SOI wafers / L. Lukasiak ; E. Kamieniecki ; A. Jakubowski ; J. Ruzyllo
Analysis of soft errors in floating channel type surrounding gate transistor (FC-SGT) DRAM cells / F. Matsuoka
Radiation damage in deep submicron partially depleted SOI CMOS / J.M. Rafi ; X. Serra-Gallifa ; M. Kokkoris ; E. Kossionides ; G. Fanourakis
Study of the leakage drain current in graded-channel SOI nMOSFETs at high-temperatures / M. Bellodi
Radiation response of SOI CMOS transistors/4M SRAMs fabricated in UNIBOND substrates / S.T. Liu ; W. Heikkila ; K. Golke ; B. Stinger ; M. Flanery ; A. Hurst ; G. Panning ; G. Kirchner ; W.C. Jenkins
Nature of high-temperature charge instability of fully depleted SOI MOSFETs / A.N. Nazarov ; V.S. Lysenko ; J.P. Colinge
Control of SEU in SOI SRAMs through carrier lifetime engineering / S. Mitra ; D.P. Ioannou ; D.E. Ioannou
Evaluation of commercial ultra-thin SOI substrates using confocal laser inspection system / A. Ogura ; O. Okabayashi
Extraction of high frequency noise parameters of 0.25 [mu]m partially depleted silicon-on-insulator MOSFET: impact of the high resistivity substrate / R. Daviot ; O. Rozeau ; N. Abouchi ; A. Grouillet ; L. Tosti
Temperature and magnetic field dependence of the carrier mobility in SOI wafers by the pseudo-MOSFET method / C. Rossel ; D. Halley
Carrier lifetimes in SOI material
Total dose radiation hardness of double-gate ultra-thin SOI MOSFETs / C.R. Cirba ; R.D. Schrimpf ; L.C. Feldman ; D.M. Fleetwood ; K.F. Galloway
Steady-state characterization of partially depleted SOI CMOS gates / A. Bracale ; E. Dupont-Nivet ; J.-L. Pelloie
Changes in the parameters of silicon-on-insulator structures under irradiation / I.V. Antonova ; D.V. Nikolaev ; O.V. Naumova ; S.A. Smagulova ; V.P. Popov
Spectroscopic ellipsometry characterization of the interfacial roughness in SIMOX wafer / W.J. Li ; Z.R. Song ; K. Tao ; Y.H. Yu ; X. Wang ; S.C. Zou
The Simple and the Complex: Revealing the Structure of Molten Salts / G. N. Papatheodorou
Power Applications of Molten Salts
Solvent free Dye-Sensitized Nanocrystalline Solar Cell using Room-Temperature Molten Salt Electrolyte / K. Kawata ; S. M. Zakeeruddin ; M. Gratzel
Performance of Li-Alloy/Ag[subscript 2]CrO[subscript 4] Couples in Molten LiNO[subscript 3]-KNO[subscript 3] Eutectic Electrolyte / R. A. Guidotti ; F. W. Reinhardt
Investigation of the Stability of Low-Temperature Ionic Liquids with High-Activity Anodes / T. D. J. Dunstan ; J. Caja
Investigation of the Influence of Polymer Type on the Electrochemical Behavior of Ionic Liquid/Polymer Gel Electrolytes / T. E. Sutto ; P. C. Trulove ; H. C. De Long
All-Lithium, Iodide-Based, Low-Melting Electrolytes for High-Temperature Batteries
Negative Electrode for Lithium Battery in Room-Temperature Molten Salt / Y. S. Fung ; D. R. Zhu
Direct X-Ray Diffraction Evidence for the Electrochemical Intercalation of an Imidazolium Cation into Graphite from a Room-Temperature Ionic Liquid / K. D. Sienerth
Ion Transport in Ionic-Liquid/Polymer Gel Electrolytes / R. A. Mantz
Fundamental Studies of Nickel Electrode in a Basic Na[AlCl subscript 4] Melt at 300[degree]C / J. Prakash
Ionic Liquids as Thermal Fluids / M. E. Van Valkenburg ; R. L. Vaughn ; M. Williams ; J. S. Wilkes
Proton Conduction of RTMS--Acid System / S. Mitsushima ; K. Kudo ; R. Sakamoto ; A. Noda ; Y. Takeoka ; N. Kamiya ; M. Watanabe ; K. -I. Ota
Investigations of the Electrochemical Behavior of TrialkylImidazolium Bis(trifluoromethylsulfonimide) Ionic Liquids and Their Polymer Gel Electrolytes
Molten Salts in Synthesis, Catalysis, and Green Processes
New, Halogen-Free Ionic Liquids--Synthesis, Properties and Applications / P. Wasserscheid ; R. van Hal ; A. Bosmann
Ionic Liquids for the Dissolution and Regneration of Cellulose / R. P. Swatloski ; J. D. Holbrey ; S. K. Spear ; R. D. Rogers
Green Synthesis of Ionic Liquids and Applications in Organic Synthesis, Structure and Dynamics of Lithium Polymer Electrolytes / R. X. Ren ; A. Brenner ; J. X. Wu ; W. Ou
Clean Synthesis in Ionic liquids / M. J. Earle ; K. R. Seddon
Organic Reactivity in Ionic Liquids: Nucleophilic Substitutions on Methyl p-Nitrobenzeneshlphonate / N. L. Lancaster ; T. Welton ; G. B. Young
Thermal Degradation Studies of Alkyl-Imidazolium Salts and Their Application in Nanocomposites / W. H. Awad ; J. W. Gilman ; M. Nyden ; R. Davis ; R. H. Harris Jr. ; J. H. Callahan ; H. C. Delong
Transition Metal Catalyzed CO/Olefin Co- Polymerization in Room Temperature Ionic Liquids / K. H. Shaughnessy ; M. A. Klingshirn ; G. A. Broker
Catalytic Oxidation and Comparative Kinetics in Room-Temperature Ionic Liquids / M. M. Abu-Omar ; G. S. Owens ; A. Durazo
Bioelectrocatalytic Reactions in Room-Temperature Ionic Liquids / D. L. Compton ; J. A. Laszlo
Solvatochromic Probe Behavior wthin Neat and Cosolvent added Room-Temperature Ionic Liquid Solutions / K. A. Fletcher ; S. Pandey
Ionic Liquids from Biorenewable Resources: Nicotine and Fructose / S. T. Handy ; M. Okello ; C. Egrie ; G. Dickenson
Nonenzymatic Synthesis of Peptides in an Ionic Liquid / V. F. Smith
The oxidation of Alcohols Using Ruthenium Catalysts and Imidazolium Ionic Liquids / V. Farmer
Palladium Catalyzed Suzuki Cross-Coupling Reactions in Ambient-Temperature Ionic Liquids / C. J. Mathews ; P. J. Smith
Room-Temperature Ionic Liquids for Synthesis of Advanced Materials / S. Dai ; C.-Y. Yuan ; B. Lee ; C. Liang ; R. D. Makote ; H. Luo
High Temperature Molten Salts
Molten Salt Oxidation: A Rassessment of its Supposed Catalytic Mechanism and Hence its Development for the Disposal of Waste Automotive Tires / T. R. Griffiths ; V. A. Volkovich ; E. M. Anghel
Molten Salt Electrocatalytical Membrane Cells for Flue Gas Cleaning / S. B. Rasmussen ; K. M. Eriksen ; J. Winnick ; P. Simonsen ; R. Fehrmann
In-Situ Raman Spectroscopic Study of Supported Molten Salt Catalysts During SO[subscript 2] Oxidation / I. Giakoumelou ; R. M. Caraba ; V. Parvulescu ; S. Boghosian
Raman Spectroscopic Measurements and Molecular Dynamic Simulation of Three-Dimensional Anionic Structures of Molten Al[subscript 2]O[subscript 3]-Na[subscript 2]O-SiO[subscript 2] System / Y. Sasaki ; M. Mohri ; K. Ishii
Electrical Conductivity and Transference Number Measurements of FeO - CaO - MgO - SiO[subscript 2] Melts / A. Ducret ; D. Khetpal ; D. R. Sadoway
Lewis Acid-Base Equilibrium Effects on the Volatility of Aluminum and Gallium Trichlorides in Molten NaCl-AlCl[subscript 3]-GaCl[subscript 3] Mixtures and on the Ga/Al Separation Factor / A. B. Salyulev ; A. L. Bovet ; N. I. Moskalenko
Molten Salt electrolysis for the Recycling of Pulping Chemicals / R. Wartena ; P. H. Pfromm
Thermodynamics of the Formation of Gallium Chlorides in the LiCl-KCl-CsCl Eutectic Melt / V. V. Smolensky ; V. S. Mityaev ; N. P. Borodina
Low-Melting Salt Mixtures Data: Errors in Concentration Coordinates / V. I. Lutsyk
A New Model of the Electric Double Layer at Electrodes in Molten Salts / A. Kisza
Towards Elimination of the Anode Effect and Perfluorocarbon Emissions from Hall-Heroult Cells / H. Zhu
Measurement and Modeling of the Alumina Solubility in Cryolite Melts at 1300K / Y. Zhang ; R. A. Rapp
Redox Potential of Novel Electrochemical Buffers Useful for Corrosion Prevention in Molten Fluorides / G. D. Del Cul ; D. F. Williams ; L. M. Toth
Corrosion and Vapor Transport Involving Novel Manganese Oxo-Species: the Characterization of Molecular Cs[subscript 2]MnO[subscript 4] by Mass Spectrometry and Matrix Isolation IR Spectroscopy / B. Farrow ; R. A. Gomme ; J. S. Ogden
Model Structures of Alkali Metal Chloride Melts / V. G. Kremenetsky
Relationship Between Electrical Conductivity and Thermodynamic Properties of Binary Molten Salt Mixtures / A. Redkin
Investigation of the Kinetics of Electrode Processes in Halide Melts Containing Beryllium, Vanadium, Niobium and Hafnium / O. I. Rebrin ; R. Yu. Scherbakov ; I. B. Polovov ; S. M. Mihalev ; A. S. Muhamadeev ; B. D. Vasin
Raman Spectra of Liquid Sulfur Around the Polymerization Transition and in the Glassy State / A. G. Kalampounias ; S. N. Yannopoulos
Raman Spectroscopic Measurements of Molten Ceramic Materials at High Temperature
Spectra and Structure of Pt (II) Complexes in Carbamide and Carbamide-Halide Melts / N. I. Buryak ; T. A. Silinskaya ; N. KH. Tumanova ; S. V. Volkov
Lanthanide, Actinide, and Radioisotope Chemistry in Molten Salts
Investigation of Uranium in Bis(trifluoromethylsulfonyl)imide Based Ionic Liquids / D. A. Costa ; W. J. Oldham ; R. Chavarria
About Possible Use of Low-Temperature Melts for Plutonium Alloy Conversion to Pellet MOX-fuel / A. G. Ossipenko ; V. N. Syuzyov ; V. A. Stupin ; A. V. Bychkov
Actinide Chemistry in Novel Solvent Media: Room-Temperature Ionic Liquids / A. E. Visser
Electrotransport of U and Pu into Liquid Cadmium Cathodes in LiCl-KCl Eutectic Melts / K. Uozumi ; M. Iizuka ; T. Inoue ; O. Shirai ; T. Iwai ; Y. Arai
Anodic Process of Electrorefining Spent Nuclear Fuel in Molten LICl-KCl-UCl[subscript 3]/Cd System / S. X. Li
Actinides Recycle by Pyrometallurgy in Nuclear Fuel Cycle / Y. Sakamura ; K. Kinoshita ; T. Usami ; M. Kurata ; T. Yokoo
Separation of Uranium and Magnesium by Molten Salt Electrorefining / B. Mishra ; I. Maroef ; D. Hebditch
Influence of the First and Second Coordination Spheres on Electrochemical and Thermodynamic Properties in Alkali Chloride Melts / S. A. Kuznetsov ; M. Gaune-Escard
Nano-Materials from Molten Salts: Preparation of Nano-Sized Lanthanide Phosphates from Chloride Melts / R. C. Thied
Mixing Enthalpies of TbBr[subscript 3]-MBr Liquid Mixtures (M=Li, Na, K, Rb, Cs) / L. Rycerz
Infrared Radiation Spectra of Oxyhydryl Groups in MCl (M = Na, K, Cs) and UO[subscript 2]Cl[subscript 2]-CsCl Mixed Melts / A. A. Khokhryakov ; A. M. Khokhlova
Joint Electroreduction of Lanthanum, Gadolinium and Boron in Chloride Melts / H. B. Kushkhov ; M. K. Vindizheva ; A. S. Uzdenova ; Z. A. Zhanikaeva
Hafnium in Molten Salts: Electrochemistry, Chemistry, Electrodeposition / S. V. Kuznetsova
Electrochemical Behavior of Some Lanthanides in Imide Room-Temperature Molten Salt Systems / M. Yamagata ; Y. Katayama ; T. Miura
Electrodeposition in Molten Salts
Electrodeposition of Titanium-Aluminum Alloys in the Lewis Acidic Aluminum Chloride-1-Ethyl-3-Methylimidazolium Chloride Molten Salt / T. Tsuda ; C. L. Hussey ; G. R. Stafford
STM Study of 2D and 3D Phase Formation of Ni and Ni-Al Alloys during Eletrodeposition from a Chloroaluminate Molten Salt / C. A. Zell ; W. Freyland
Electrodeposition of Al-Mg Alloys from Lewis Acidic AlCl[subscript 3]-EMIC-MgCl[subscript 2] Room-Temperature Molten Salts / M. Morimitsu ; N. Tanaka ; M. Matsunaga
The Electrodeposition of Germanium from an Ionic Liquid: a Mini-Review on the Nanoscale Processes / F. Endres
Conductivity and Electrochemistry of Cobalt (II) and Dysprosium Chloride in Zinc Chloride-1-Ethyl-3-Methyl-Imidazolium Chloride Room-Temperature Molten Salt / H. -Y. Hsu ; C. -C. Yang
Construction Principle of Complex Electrochemical Synthesis (ES) Diagrams on the Example of the Ti-B System / G. Kaptay
The Electrochemistry of Tin in the Zinc Chloride- 1-Ethyl-3-Methylimidazolium Chloride Ionic Liquids / J. -F. Huang ; I-W. Sun
High Temperature Oxidation Behavior of TiAl Coated by Al-Cr Alloy in Molten Salt / M. Ueda ; D. Susukida ; S. Konda ; T. Ohtsuka
Preparation of a High-Surface-Area Nickel Electrode in a ZnCl[subscript 2]-NaCl Melt / A. Katagiri ; M. Nakata
Production of Aluminium, Magnesium and Aluminium-Magnesium Alloys by Direct Electrochemical Reduction of Their Solid Oxides / A. Cox ; D. J. Fray
Production of Reactive Metals by Molten Salt Processing / D. L. Olson
Electrowinning of Metallic Lithium from Molten Salts / Y. Sato ; Y. Qin ; Z. Zheng ; T. Kobayashi ; T. Yamamura
Electrorefining of Magnesium in Chloride Melts / T. Takenaka ; S. Isazawa ; Y. Naka ; M. Kawakami
Formation of Metal Fog and Dissolved Metals During Electrodeposition from Molten Salts / G. M. Haarberg
Electrodeposition of Refractory Metals from Molten Salts / E. Boland ; R. Lanam ; A. Shchetkovskiy ; A. Smirnov
Electroless Coating of Non-Conducting Surfaces and Particles with Metallic Titanium in Molten Salts / J. Sytchev ; Zs. H. Gondor
A New Concept of Sponge Titanium Production by Calciothermic Reduction of Titanium Oxide in the Molten CaCl[subscript 2] / R. O. Suzuki ; K. Ono
Investigation of the Mechanism of the Joint Electrodeposition of Dimolibdenate, Ditungstate (Mo[subscript 2]O[subscript 7 superscript 2-], W[subscript 2]O[subscript 7 superscript 2-])-Ions and Carbon Dioxide (CO[subscript 2]) in Sodium Tungstate Melt / L. M. Beroeva ; M. N. Adamokova
Joint Electrodeposition of Molybdenum, Tungsten and Molybdenum-Tungsten Alloys from Oxy-Halide Melts / R. A. Karashaeva
Electrorefining of Aluminum in C[subscript 6]mimCl + AlCl[subscript 3] ionic Liquid At near Room Temperature / V. Kamavaram ; R. G. Reddy
Cathode Bottom Wear During Aluminum Electrolysis / H. A. Oye ; X. Liao ; A. Store ; T. Foosnoes
Study of the Morphology of TiB[subscript 2] Coatings on Molybdenum Substrates Electrodeposited from a NaCl-KCl-K[subscript 2]TiF[subscript 6]-NaF-NaBF[subscript 4] Melt at 700[degree]C / M. F. Souto ; A. Kopf ; R. Krendelsberger ; G. E. Nauer
Electrodeposition of Zinc from Lewis Basic 1-Ethyl-3-Methylimidazolium Bromide-Zinc Bromide Molten Salt / H. Yamamoto ; T. Iwagishi ; K. Koyama ; H. Shirai ; H. Kobayashi
Electrochemical Deposition of Aluminum at Vitreous Carbon in a Room-Temperature Molten Salt / G. T. Cheek
Electrochemistry and Methods for the Electropolishing of Refractory Metals in Low-Temperature Carbamide Containing Melts / S. Kochetova ; L. Bogdanovich ; N. Tumanova
Electrochemistry and Properties of Room-Temperature Molten Salts
Electrochemical Investigations in the Ionic Liquid 1-Butyl-3-Methylimidazolium Hexafluorophosphate / D. L. Boxall ; J. J. O'Dea ; R. A. Osteryoung
Electrochemistry in Ionic Liquids / C. A. Brooks ; A. P. Doherty
Electrochemistry of 1-Butyl-3-Methyl-1H-Imidazolium Tetrafluoroborate Ionic Liquid / L. Xiao ; K. E. Johnson
Electrochemical Studies of the Fries Rearrangement in a Room-Temperature Molten Salt
Electrochemistry of Ta(V) in Lewis Basic TaCl[subscript 5]-EMIC Low Temperature Molten Salts / T. Matsuo
Electrolytic Synthesis of Perfluorotrimethylamine with Alkali Metal Fluroide Contained Carbon Anode / A. Tasaka ; A. Miyasaka ; T. Miyazaki ; H. Takebayashi ; T. Tojo ; K. Momota
Analysis of the Secies in the (CH[subscript 3])[subscript 4]NF - mHF Melt and Electrolysis of its Melt with LiNiO[subscript 2] Coated Ni Anode / Y. Shodai
Electrical Conductivity of Coexisting System Containing Inorganic Powder and Ambient-Temperature Molten Salts / M. Mizuhata ; K. Yaso ; A. Kajinami ; S. Deki
The Molarities of Ionic Liquid Species--Densities are not Boring
NMR Relaxation Studies and Molecular Modeling of 1-butyl-3-methylImidazolium PF[subscript 6] [BMIM PF6] / W. R. Carper ; Z. Meng ; A. Dolle
Coordination Chemistry and Speciation of Metal Complexes in Room-Temperature Ionic Liquids / D. B. Williams
Quantitative Study by Raman Spectroscopy of the Stability of 1-Methyl-3-Butylimidazolium Chloride/AlCl[subscript 3]/EthylAlCl[subscript 2] Mixed Molten Salts in Presence of an Aliphatic Hydrocarbon / B. Gilbert ; S. Dechamps ; H. Olivier
The HNMR Spectra of Molten Asymmetric Pyridinium Salts / D. S. Newman ; D. Y. Chen ; V. A. Oliveira ; A. M. Elias ; M. E. Elias
Alkylimidazolium Fluorohydrogenates Room Temperature Molten Salts / R. Hagiwara ; K. Matsumoto ; Y. Nakamori ; Y. Ito ; H. Matsumoto
Physicochemical Properties of Pyrazolium Based Ionic Liquid 1-Ethyl-2-Methylpyrazolium Tetrafluoroborate / V. Katovic
Conductivities of Room Temperature Molten Salts Containing ZnCl[subscript 2], Measured by a Computerized Direct Current Method
Investigation of Physical Properties for a New Type Molten ZnCl[subscript 2]-DMSO[subscript 2] Electrolytes / M. -F. Shu
High-energy X-ray Diffraction Studies of Alkylimidazolium Fluorohydrogenate Room-Temperature Molten Salts at Spring-8 High-Energy X-ray Diffraction Beamline BL04B2 / S. Kohara ; K. Suzuya
Physical and Electrochemical Properties of Room Temperature Molten Salt Based on Aliphatic Onium Cations and Asymmetric Amide Anion / H. Kageyama ; Y. Miyazaki
Author Index
Subject Index
Max Bredig Award Address
The Simple and the Complex: Revealing the Structure of Molten Salts / G. N. Papatheodorou
Process Emissions Characterization and Treatment / A.：
Emissions Characterization of Advanced CVD Processes and Abatement Performance / V. Vartanian ; B. Goolsby ; C. Reddy ; V. Arunachalam ; L. Mendicino
Effective Management of Process Exhaust from Low-K CVD Processes / S. Carss ; A. Seeley ; J. Van Gompel
Development and Evaluation of the ATMI CDO 865 for Abatement of Low-K Process Effluent / B. Flippo ; R. Vermeulen
Managing Fluorine Emissions at Semiconductor Fabrication Facilities / M. Smylie
Characterization of Plasma-Etched RuO[subscript 2] Substrates / S. Samavedam ; L Mendicino ; J.J. Lee ; T. Guenther ; S. Dakshina-Murthy ; C. Sparks
Evaluation of Ozone Emissions Destruction Units for SACVD Process Tools / C. Nauert ; R. Camacho ; B. Day ; R. Lathrop ; H. Kwong ; J. Fox
Potential Cost of Ownership Reduction for a Nitride Furnace Point of Use Abatement Device / B. Davis ; M. Rossow
Electrochemical Removal of Hydrogen Sulfide from Geothermal Brines / B.G. Ateya ; F.M. AlKharafi
PFC Emissions Reduction / B.：
The Evaluation of Hexafluoro-1,3-Butadiene as an Environmentally Benign Dielectric Etch Chemistry in a Medium Density Etch Chamber / R. Chatterjee ; R. Reif ; T. Sparks
Post-Pump PFC Abatement by Atmospheric Microwave Plasmas: Completion of Metal Etch Beta Test / J.C. Rostaing ; D. Guerin ; C. Larquet ; A. El-Krid ; C.H. Ly ; J. Bruat ; E. Coffre ; M. Moisan ; H. Dulphy ; P. Moine ; J. Wiechers
Characterization of NF[subscript 3] Chamber Cleans on Multiple CVD Platforms / J. Rivers ; J. Vires ; A. Soyemi ; S.P. Sun ; M. Turner ; C. Esber
Reduction of PFC Emissions Through Process Advances in CVD Chamber Cleaning / S. Hsu ; C. Allgood ; M. Mocella
PFC Emissions Reduction and Process Improvements with Remote Plasma CVD Chamber Cleans / P.T. Brown ; S. Filipiak ; H. Estep ; M. Fletcher
Thermal Reductive Destruction of Perfluorocarbons into Safe Products Through In-situ Generation of Alkali Metals in Heated Solid Mixtures / M.C. Lee ; W. Choi
Alternative Cleans Technologies and Emerging Issues / C.：
Post Oxide Etching Cleaning Process Using Integrated Ashing and HF Vapor Process / O. Kwon ; H. Sawin
Fluorocarbon Film and Residue Removal Using Supercritical CO[subscript 2] Mixtures / S. Myneni ; D. Hess
A Summary of Recent Motorola Water Conservation Efforts from Source Reduction of Process Equipment / B. Raley ; T. Dietrich
Partnerships to Address EHS Aspects of Chemical Management in the Semiconductor Industry: Lessons from the PFAS Experience / M. Bowden ; L. Beu ; S. Pawsat
PFAS: Treatment Options and Sampling Methods / K. Barbee ; L. Lovejoy
EHS Risk Assessment and Management / D.：
Concepts and Application of Risk Management of Address Business Needs / S. Trammell ; J. Heironimus
Emergency Preparedness and Response for Semiconductor Manufacturing / S. Harris
Environmental Health and Safety (EHS) Investigation of CVD Exhaust System: Identification and Mitigation of Potential Release of Process Gases and By-products / L. Chandna ; A. Reynoso ; K. Hendricksen
Point of Use Abatement Unit By-Pass for NF[subscript 3]-Based CVD Chamber Clean Applications / D. Babbitt
Process Emissions Characterization and Treatment / A.：
Emissions Characterization of Advanced CVD Processes and Abatement Performance / V. Vartanian ; B. Goolsby ; C. Reddy ; V. Arunachalam ; L. Mendicino
Effective Management of Process Exhaust from Low-K CVD Processes / S. Carss ; A. Seeley ; J. Van Gompel
Quantum Interference Effects in the Nanotriode / S. Johnson ; A. Blackburn ; A. Driskill-Smith ; D. Hasko ; H. Ahmed
Microgated In-Situ Grown Carbon Nanotube Field Emitter Arrays / D. Hsu ; J. Shaw
A Micromachined On-chip Vacuum Microtriode Using a Carbon Nanotube Cold Cathode / W. Zhu ; L.H. Chen ; C. Bower ; D. Shalom ; D. Lopez
Electron Emission Microscopy Measurements of Nitrogen and Sulfer Doped Carbon Films / F. Koeck ; S. Gupta ; B.R. Weiner ; G. Morell ; J.M. Garguilo ; B. Brown ; R.J. Nemanich
Carbon Nanotubes for Future Field Electron Emission Devices / O. Groning ; R. Clergeraux ; L. Nilsson ; P. Ruffieux ; L. Schlapbach ; P. Groning
Saturated Emmision from Carbon Nanotubes
Fabrication and Characterization of Field Emission Devices Based on Single Vertically Aligned Carbon Nanofibers / M.A. Guillorn ; V.I. Merkulov ; A.V. Melechko ; E.D. Ellis ; L.R. Baylor ; D.K. Hensley ; R.J. Kasica ; T.R. Subich ; D. Lowndes ; M.L. Simpson
Atom-by-atom Analysis of Field Emission Sources by the Scanning Atom Probe / O. Nishikawa ; T. Yagyu ; T. Murakami ; M. Watanabe ; M. Taniguchi ; T. Kuzumaki ; S. Kondo
Field Emitter Arrays
Microfabricated Field Emitter Performance Enhancement by High Current Processing / P.R. Schwoebel ; C.A. Spindt ; C.E. Holland
Study of Emitter Materials for use in Hostile Environments / W.A. Mackie ; C. Dandeneau ; L.A. Southall ; F.M. Charbonnier
Intelligent Silicon Field Emission Arrays / C.Y. Hong ; A.I. Akinwande
Field Emission Array Cathode Material Selection for Compatibility with Electric Propulsion Applications / C.M. Marrese-Reading ; J. Polk ; B. Koel ; M. Quinlan
Field Induced Thickening of Au-coated Nanosize Si-tip and Field Emission from PR-coated Si-tip / S.S. Choi ; M.Y. Jung ; D.W. Kim ; M.S. Joo
Field Emission Study of Ti-Silicide Array / S.B. Kim ; H.T. Jeon
Theory and Simulation
Emissive and Cooling Properties of Carbon Based Materials for Microelectronics / N.M Miskovsky ; P.H. Cutler ; A. Mayer ; P.B. Lerner
Modeling Device Performance and Feature Variation in Microtip Field Emitters / J. Zuber ; K.L. Jensen
Simulations of Transport and Field-Emission Properties of Multi-wall Carbon Nanotubes / N.M. Miskovsky
Equilibrium Theory of Nanotips / G. Bilbro
An Analysis of FEA Noise Mechanisms / M. Cahay
Sub-Poissonian and Super-Poissonian Shot Noise in Planar Cold Cathodes / R. Krishnan
Electrostatic Factors Affecting Emission From Discrete Isolated Diamond Nanodots / D.L. Jaeger ; T. Tyler ; A.K. Kvit ; J.J. Hren ; V.V. Zhirnov
Current Density Evaluation At The Barrier Maximum / P. O'Shea ; D. Feldman
Tunnel Charcateristics of the Metal Tip-Cathodes with the Superthin Diamond Coatings Using Non-Local Considerations / L. Il'chenko ; V. Il'chenko ; R.M. Novosad ; Y.V. Kryuchenko
About Theoretical Calculation of Semiconductor's Surface Images for Closely Spaced Semiconductor and Metal in STM
Thin films and Nanostructures
Emission from GaN p-n Junction Cold Cathodes / R. Treece ; D. Patel ; C. Menoni ; J. Smith ; J. Pankove
Effect of Film Thickness on Low-Energy Electron Transmission in Thin CVD Diamond Films / J. Yater ; A. Shih ; J. Butler ; P. Pehrsson
Growth and Characterization of LaS and NdS Thin Films on Si, GaAs, and InP Substrates / Y. Modukuru ; J. Thachery ; P. Boolchand ; J. Grant
Surface-Emitting Ballistic Cold Cathodes Based on Nanocrystalline Silicon Diodes / N. Koshida ; K. Kojima ; Y. Nakajima ; T. Ichihara ; Y. Watabe ; T. Komoda
Microwave-Tube Experiments Utilizing Ferroelectric Electron-Gun / M. Einat ; E. Jerby ; G. Rosenman
Author Index
Subject Index
Preface
Carbon Nanotubes
Quantum Interference Effects in the Nanotriode / S. Johnson ; A. Blackburn ; A. Driskill-Smith ; D. Hasko ; H. Ahmed
Ultra-Shallow Junctions for Nanoscale CMOS / Section I：
High Ramp Rate Rapid Thermal Annealing for Ultra-Shallow Junctions / P. Kohli ; H.-J. Li ; S. Ganguly ; T. Kirichenko ; B. Murto ; E. Graetz ; P. Zeitzoff ; M. Pawlik ; P.B. Merrill ; S. Banerjee1.：
New Physics for Modeling Transient Enhanced Diffusion in RTP / M.Y.L. Jung ; R. Gunawan ; R.D. Braatz ; E.G. Seebauer2.：
Optical Effects in Diffusion and Activation Processes During RTA / R.B. Fair3.：
Spike Annealing for Ultra-Shallow Junction Formation / A. Jain4.：
Inherent Radiative Differences between Rapid Thermal and Furnace Annealing: Their Effects on Dopant Diffusion and Activation / P.S.-J. Choi ; D.-L. Kwong5.：
Ultra-Shallow Junction Formation Using Ion Implantation and Rapid Thermal Annealing: Physical and Practical Limits / A. Agarwal ; H.-J.L. Gossmann ; A.T. Fiory ; V.C. Venezia ; D.C. Jacobson6.：
Role of Silicon and Boron Interstitial Clusters in Transient Enhanced Diffusion / N.E.B. Cowern ; G. Mannino ; F. Roozeboom ; J.G.M. van Berkum ; B. Colombeau ; A. Claverie7.：
Ultra-Shallow P[superscript +]-N Junctions for 35-70 nm CMOS using Selectively Deposited Very Heavily Boron-doped Silicon-Germanium Films / S. Gannavaram ; M.C. Ozturk8.：
Selective Epitaxial Si and SiGe for Elevated Source Drain MOSFETs / S.B. Samavedam ; A. Dip ; A.M. Phillips ; J. Smith ; J.M. Grant ; W.J. Taylor ; P.J. Tobin9.：
Laser Thermal Processing (LTP) for Fabrication of Ultra-Shallow, Hyper-Abrupt, Highly Activated Junctions for Deca-Nanometer MOS Transistors / S. Talwar ; Y. Wang ; C. Gelatos10.：
Athermal Annealing of Silicon Implanted with Phosphorus and Arsenic / J. Grun ; R.P. Fischer ; M. Peckerar ; C.L. Felix ; B.C. Covington ; D.W. Donnelly ; B. Boro Djordjevic ; R. Mignogna ; J.R. Meyer ; A. Ting ; C.K. Manka11.：
Exploring Alternative Annealing Methods for Shallow Junction Formation in Ion Implanted Silicon / K.S. Jones ; H. Banisaukis ; S. Earles ; C. Lindfors ; M. Griglione ; M.E. Law ; S.W. Falk ; D.F. Downey12.：
Shallow Junction Challenges to Rapid Thermal Processing / L. Larson13.：
Contacts for Nanoscale CMOS / Section II：
Aspects of Enhanced Titanium Salicide Formation / L. Kappius ; R.T. Tung14.：
Multi-Substrate CoSi[subscript 2] Formation Kinetics in a Low-Pressure, Susceptor-Based RTP Tool / A.J. Atanos ; V. Parihar ; S.-P. Sun15.：
Metal / Silicon Schottky Barrier Lowering by RTCVD Interface Passivation / Q.W. Ren ; W.D. van Noort ; L.K. Nanver ; J.W. Slotboom16.：
Gate Stacks for Nanoscale CMOS / Section III：
Ultrathin CVD Gate Dielectrics for 130 nm Technology Node / V.H.C. Watt ; A. Karamcheti ; T.-Y. Luo ; H.N. Al-Shareef ; M.D. Jackson ; H.R. Huff17.：
High Performance, Highly Reliable Gate Oxide Formed with Rapid Thermal Oxidation In-Situ Steam Generation (ISSG) Technique / Y. Ma ; Y.N. Chen ; M.M. Brown ; F. Li ; Y. Chen ; J. Eng, Jr. ; R.L. Opila ; Y.J. Chabal ; J. Sapjeta ; D.A. Muller ; G.C. Xing ; T. Trowbridge ; M. Khau ; N. Tam18.：
High Reliable In Situ Steam Generation Process for 1.5-2.5 nm Gate Oxides / M. Bidaud ; F. Guyader ; F. Glowacki ; F. Monsieur ; D. Roy ; S. Bruyere ; E. Vincent ; K. Barla19.：
Investigation of In-Situ Steam Generated Oxide (ISSG) followed by Remote Plasma Nitridation (RPN) for Effective Oxide Thickness Decrease and Gate Leakage Reduction / K. Eason ; R. Jallepally ; D. Noble ; S. Mattangady ; R. Khamankar ; A.L.P. Rotondaro20.：
Rapid Thermal Processing Using Steam / R. Sharangpani ; J.H. Das ; S.-P. Tay21.：
Corona-Charge Evaluation of Thermal SiO[subscript 2] Growth by Single-Wafer and Batch Methods / A. Fiory ; J. Zhang ; P. Frisella ; J. Hebb22.：
Growth of Ultrathin Nitride on Si(100) by Rapid Thermal N[subscript 2] Treatment / Z.H. Lu ; A. Khoueir ; W. T. Ng23.：
Gate Dielectrics Formed by Remote Plasma Nitridation of Ultrathin In-Situ Steam Generated (ISSG) Oxides / T.Y. Luo ; G.A. Brown ; M. Laughery ; K. Torres ; K. Ahmed ; R. Jallepally|cD. Noble ; G. Miner24.：
In-situ Rapid Thermal N[subscript 2]O Oxidation of NH[subscript 3]-Nitrided Si for Ultrathin Nitride/Oxide Stack Gate Formation / Y.H. Kim ; S.C. Song ; H.F. Luan ; J.C. Gelpey ; A. Kepton ; S. Levy ; R. Bloom25.：
Processing and Characterization of RTCVD Silicon Nitride and Oxynitride Grown in a Single-Wafer RT Cluster Tool / C.P. D'Emic ; E.P. Gusev ; J. Newbury ; P. Kozlowski ; K. Chan ; T. Zabel ; P. Varekamp26.：
Ultrathin (EOT [ 7 A) Ta[subscript 2]O[subscript 5] Gate Stacks Prepared by an In-Situ RT-MOCVD Process / S.J. Lee ; C.H. Lee ; Y. Senzaki ; D. Roberts28.：
High-k Oxides by Atomic Layer Chemical Vapour Deposition / M. Tuominen ; T. Kanniainen ; S. Haukka29.：
Electrical and Chemical Properties of Ultrathin RT-MOCVD Grown Ti-Doped Ta[subscript 2]O[subscript 5] / A. Mao ; T.S. Jeon ; R. Vrtis30.：
Electrical and Material Properties of Metal Silicate Dielectrics and Metal Gates for Advanced CMOS Devices / V. Misra ; M. Kulkarni ; G. Heuss ; H. Zhong ; H. Lazar31.：
RTCVD Polysilicon Grain Dimension Control / D. O'Meara ; J. Conner ; M. Rossow ; T. Neil ; V. Wang ; C.-L. Chang32.：
New Applications of RTP / Section IV：
Mechanisms and Applications of the Control of Dopant Profiles in Silicon Using Si[subscript 1-x-y] Ge[subscript x]C[subscript y] Layers Grown by RTCVD / J.C. Sturm ; M.S. Carroll ; M. Yang ; J. Gray ; E. Stewart33.：
High Performance Buried Silicon-Germanium Channel PMOST Fabricated Using Rapid Thermal Processing and Shallow Trench Isolation / D.J. Tweet ; S.T. Hsu ; D.R. Evans ; B. Ulrich ; Y. Ono ; L. Stecker34.：
Kinetic Study of In-Situ Copper Oxidation and Reduction Using Rapid Thermal Processing and Its Applications in ULSI / Y.Z. Hu35.：
Development of an RTA Process for the Enhanced Crystallization of Amorphous Silicon Thin Films / Y.-G. Yoon ; T.-K. Kim ; K.-B. Kim ; J.-Y. Choi ; B.-I. Lee ; S.-K. Joo36.：
Advances in RTP Systems and Process Monitoring / Section V：
Optimization of Support Temperature in RTA-Tools by Scanning Infrared Depolarization Imaging of Monitor Wafers / H.-D. Geiler ; H. Karge ; B. Krimbacher37.：
Wafer Temperature Characterization During Low-Temperature Annealing / W.S. Yoo ; T. Fukada38.：
Determining the Uncertainty of Wafer Temperature Measurements Induced by Variations in the Optical Properties of Common Semiconductor Materials / B. Adams ; A. Hunter ; M. Yam ; B. Peuse39.：
Low-Temperature Measurements and Monitors for Rapid Thermal Processing / P.J. Timans ; N. Acharya ; I. Amarilio40.：
In Situ Selectivity and Thickness Monitoring based on Quadrupole Mass Spectroscopy during Selective Silicon Epitaxy / E.A. Rying ; G.L. Bilbro ; J.C. Lu41.：
Optimization and Control of Gas Flows in an RTCVD Reactor / Y. Rainova ; K. Antonenko ; A. Barchotkin ; J. Pezoldt42.：
LEVITOR 4000: An Advanced RTP System Based on Conductive Heat Transfer / V.I. Kuznetsov ; A.B. Storm ; G.J. Snijders ; C. de Ridder ; T.A.M. Ruijl ; J.C.G. van der Sanden ; E.H.A. Granneman43.：
Ultra-Shallow Junction Formation of BF[subscript 2 superscript +] Implants Using a Low-Pressure, Hot-Wall Rapid Thermal Anneal / K. Reddy ; J.-F. Daviet44.：
Temperature Gradient Rapid Thermal Processor / J.-M. Dilhac ; C. Ganibal45.：
Radical Reaction Based Semiconductor Manufacturing for Very Advanced ULSI Process Integration / T. Ohmi
Keynote Papers
From Ambient Intelligence to Silicon Process Technology / C.J. van der Poel
From the Lab to the Fab: Transistors to Integrated Circuits / H. R. Huff
Diffused Silicon Transistors and Switches (1954-1955): The Beginning of Integrated Circuit Technology / N. Holonyak Jr.
Current Status and Future Prospects in Mixed Signal SOC / A. Matsuzawa
Process Integration for Memory Devices
DRAM Technology for 100nm and Beyond / K.H. Kusters ; J. Alsmeier ; J. Faul ; J. Lutzen ; T. Zell
Logic Based Embedded DRAM Technologies / C. Mallardeau
Flash Memory Technology Evolution / R. Bez ; E. Camerlenghi
FeRAM Technology: Today and Future / I. Kunishima ; N. Nagel
Effects of Nitridation Treatment for Electrochemical Properties of MONOS Non-Volatile Memories / H. Aozasa ; I. Fujiwara ; K. Nomoto ; H. Komatsu ; T. Kobayashi
The Crystallization Behavior and Interfacial Reaction of Ge[subscript 2]Sb[subscript 2]Te[subscript 5] Thin Films Between Dielectric Material for the Application to the Phase Change Memory / E.J. Jung ; S.K. Kang ; B.G. Min ; D.H. Ko
Full Process Integration Aspects
Single-Wafer Technology in a 300-mm Wafer Fab / S. Ikeda ; K. Nemoto ; M. Funabashi
The Impact of Single Wafer Processing on Process Integration / R. Singh ; M. Fakhruddin ; K.F. Poole
Advanced Multilevel Interconnects Technologies for 40-nm Lg Devices / T. Ohba
Performance Limitations of Metal Interconnects and Possible Alternatives / K.C. Saraswat ; P. Kapur ; S. Souri
Plasma Technologies for Low-k Dry Etching / T. Tatsumi
A Novel Approach to Contact Integration at 90-nm and Beyond / A. Singhal ; T. Sparks ; K. Strozewski ; F. Huang ; S. Parihar ; J. Schmidt ; B. Boeck ; J. Fretwell ; G. Yeap ; V. Sheth ; S. Veeraghavan ; B. Melnick
SiGe Process Integration
BiCMOS Integration of High-Speed SiGe:C HBTs / H. Rucker ; B. Heinemann ; R. Barth ; D. Knoll ; D. Schmidt ; W. Winkler
Applications of Silicon Germanium Electrodes in ULSI / E.-X. Ping ; E. Blomiley ; F. Gonzalez
Noise Properties and Hetero-Interface Traps in SiGe-Channel PMOSFETs / T. Tsuchiya ; J. Murota
Ultra-Shallow Junction Formation by Low Energy Ion Implantation and Flash Lamp Annealing / K. Suguro ; T. Ito ; T. Itani ; T. Iinuma
Integration Aspects for Emerging Technologies
Single and Few Electron Devices. Integration Trends / J. Gautier
Achieving Low Junction Capacitance on Bulk Si MOSFET Using SDOI Process / Z. Wang ; T. Abbott ; J. Trivedi ; C.-C. Cho ; M. Violette
Differential Silicide Thickness for ULSI Scaling / W.J. Taylor Jr. ; J. Smith ; J.-Y. Nguyen ; R. Rai ; O. Adetutu ; J. Geren ; J. Ybarra ; D. Petru
High-Voltage CMOS and Scaling Trends / H. Ballan
Emerging Device Solutions for the Post-Classical CMOS Era / K. De Meyer ; N. Collaert ; S. Kubicek ; A. Kottontharayil ; H. van Meer ; P. Verheyen
Modeling End-of-the-Roadmap Transistors / A. Asenov ; A.R. Brown ; J.R. Watling
Thin Film Transistors in ULSI--Status and Future / Y. Kuo
Extending Planar Single-Gate CMOS & Accelerating the Realization of Double-Gate/Multi-Gate CMOS Devices / J.O. Borland ; H. Iwai ; W. Maszara ; H. Wang
Surface Preparation and Gate Module
Cleaning for Sub 0.1 [mu]m Technology: A Particular Challenge / D.M. Knotter
Si Channel Surface Dependence of Electrical Characteristics in Ultra-Thin Gate Oxide CMOS / H.S. Momose
Integration Issues with High k Gate Stacks / C.M. Osburn ; S.K. Han ; I. Kim ; S.A. Campbell ; E. Garfunkel ; T. Gustafson ; J. Hauser ; T.-J. King ; Q. Liu ; P. Ranade ; A. Kingon ; D.-L. Kwong ; S.J. Lee ; C.H. Lee ; J. Lee ; K. Onishi ; C.S. Kang ; R. Choi ; H. Cho|cR. Nich ; G. Lucovsky ; J.G. Hong ; T.P. Ma ; W. Zhu ; Z. Luo ; J.P. Maria ; D. Wicaksana ; V. Misra ; J.J. Lee ; Y.S. Suh ; G. Parksons ; D. Niu ; S. Stemmer
Compatibility of Polysilicon with HfO[subscript 2]-based Gate Dielectrics for CMOS Applications / V. Kaushik ; S. De Gendt ; M. Caymax ; E. Young ; E. Rohr ; S. Van Elshocht ; A. Delabie ; M. Claes ; X. Shi ; J. Chen ; R. Carter ; T. Conard ; W. Vandervorst ; M. Schaekers ; M. Heyns
Analysis of CMOS Gate-To-Drain Leakage Current and Proposition of a New Cobalt Salicide Selective Etch Chemistry for High DRAM Yield / B. Froment ; C. Regnier ; M.-T. Basso
Electrical Characteristics and Thermal Stability of W[subscript 2]N/Ta[subscript 2]O[subscript 5]/Si MOS Capacitors in N[subscript 2]:H[subscript 2] or H[subscript 2] Ambients / P.C. Jiang ; J.S. Chen
Sub-Quarter Micron PMOSFET DC and AC NBTI Degradation / E. Li ; S. Prasad ; S. Park ; J. Walker
Process Integration in Integrated Circuit Applications
Physical Analysis and Modeling of Plasma Etching Mechanism for ULSI Application / M. Kanoh ; S. Onoue ; K. Nishitani ; T. Shinmura ; K. Iyanagi ; S. Kinoshita ; S. Takagi
Process Strategy for Built-in Reliability of Cu Damascene Interconnect System for 0.13um-Node and Beyond / H. Yamaguchi ; T. Oshima ; J. Noguchi ; K. Ishikawa ; H. Aoki ; T. Saito ; T. Furusawa ; K. Hinode
Impact of Wafer Backside Cu Contamination to 0.18 um Node Devices / S.Q. Gu ; L. Duong ; J. Elmer
Integrated Multiscale Process Simulation of Damescene Structures / M.O. Bloomfield ; Y.H. Im ; J. Seok ; C.P. Sukam ; J.A. Tichy ; T.S. Cale
An Analysis of the Effect of the Steps for Isolation Formation on STI Process Integration / A. Pavan ; D. Brazzelli ; M. Aiello ; C. Capolupo ; C. Clementi ; C. Cremonesi ; A. Ghetti
Defect Generation and Suppression in Device Processes Using a Shallow Trench Isolation Scheme / D. Peschiarolli ; M. Brambilla ; G.P. Carnevale ; A. Cascella ; F. Cazzaniga ; c. Clementi ; A. Gilardini ; M. Martinelli ; A. Maurelli ; I. Mica ; G. Pavia ; F. Piazza ; M.L. Polignano ; V. Soncini ; E. Bonera
Electrodeposition of Low-Dimensional Phases on Au Studied by EQCM and XRD / C. Shannon
Silicon-on-Insulator
60-nm Gate Length SOI CMOS Technology Optimized for "System-on-a-SOI-Chip" Solution / K. Imai ; S. Maruyama ; T. Suzuki ; T. Kudo ; S. Miyake ; M. Ikeda ; T. Abe ; S. Masuda ; A. Tanabe ; J.-W. Lee ; K. Shibahara ; S. Yokoyama ; H. Ooka
Emerging Silicon-On-Nothing (SON) Devices Technology / T. Skotnicki ; S. Monfray ; C. Frenouillet-Beranger
High Performance Strained-SOI CMOSFETs / S.-I. Takagi ; T. Mizuno ; T. Tezuka ; N. Sugiyama ; T. Numata ; K. Usuda ; Y. Moriyama ; S. Nakaharai ; J. Koga ; T. Maeda
Extremely Scaled Ultra-Thin Body and FinFET CMOS Devices / S. Balasubramanion ; L. Chang ; Y.-K. Choi ; D. Ha ; S. Xiong ; J. Bokor ; C. Hu
Fully Depleted SOI Process and Device Technology for Digital and RF Applications / F. Ichikawa ; Y. Nagatomo ; Y. Katakura ; S. Itoh ; H. Matsuhashi ; N. Hirashita ; S. Baba
Status and Future Development of PDSOI MOSFETs / S. Krishnan
Multi-fin Double Gate MOSFET Fabricated by Using (110)-Oriented SOI Wafers and Orientation dependent Etching / Y.X. Liu ; K. Ishii ; T. Tsutsumi ; M. Masahara ; H. Takashima ; E. Suzuki
Optimization of Ultra-Thin Body, Fully-Depleted-SOI Device, with Raised Source/Drain or Raised Extension / J.L. Egley ; A. Vandooren ; B. Winstead ; E. Verret ; B. White ; B.-Y. Nguyen
Partially Depleted SOI Dynamic Threshold MOSFET for Low-Voltage and Microwave Applications / M. Dehan ; D. Vanhoenacker-Janvier ; J.-P. Raskin
New Characterization Techniques for SOI and Related Devices / S. Okhonin ; M. Nagoga ; P. Fazan
Authors Index
Subject Index
Preface
Electronics Division Award Address
Radical Reaction Based Semiconductor Manufacturing for Very Advanced ULSI Process Integration / T. Ohmi
Negative Electrode Strategies for Lithium Systems / R. Huggins
Relationship between Structure and Electrochemistry in Disordered LiCoO[subscript 2] Cathode Materials / C. Julien
Nano-Dispersed Li-Storage Alloys as Anode Materials for Li-Ion-Cells / J. Besenhard ; M. Wachtler ; M. Wagner ; M. Winter
Electrochromism by Polarisation of Ionic and Mixed Conducting Solids / W. Chu ; A. Foteinopoulou ; M. Klingler ; S. Stramare ; K. Thoma ; W. Weppner
Frequency Dispersion of the Ionic Conductivity of RbAg[subscript 4]I[subscript 5] at Low Temperatures / E. Buchareski ; R. Potzschke ; W. Lorenz ; W. Wiesbeck ; G. Staikov
Distribution of Activation Energies Treatment of Fast Ion Motions in Glass / S. Martin ; F. Borsa ; I. Svare
Preliminary Investigations on the Influence of a Glassy Phase on Ionic Conduction of Beta-Alumina / J. Tulliani ; L. Dessemond ; L. Montanaro ; P. Fabry
On Electrochemical Decomposition of the Solid Electrolyte RbCu[subscript 4]CI[subscript 3]I[subscript 2] / G. Ostapenko
Kinetics of Electrode Process at C/RbCu[subscript 4]CI[subscript 3]I[subscript 2] Interface
Proton Transport in Solids
Ionic Devices Using Proton Conducting Ceramics / H. Iwahara
Ionic Conduction in Sintered Barium Carbonate at High Temperature / N. Oishi
Synthesis and Characterization of Two-Phase Mixed Ionic Electronic Conducting Membranes for Hydrogen Separation / B. Krishnamurty ; K. Choi ; E. Wachsman
Protonic-Electronic Conducting Barium Cerate Membranes for Hydrogen Separation / J. Rhodes
A New Nanocomposite Model for Hydrous RuO[subscript 2] / K. Swider-Lyons ; K. Bussmann ; D. Griscom ; C. Love ; D. Rolison ; W. Dmowski ; T. Egami
Anion Transport in Solids
Impedance Studies of Oxygen Exchange on a Highly Oriented Thin Film Electrode of La[subscript 0.5]Sr[subscript 0.5]CoO[subscript 3-[delta] / Y. Yang ; C. Chen ; G. Luo ; D. Ross ; C. Chu ; A. Jacobson
Transport and Permeation Properties of La[subscript 2]NiO[subscript 4+[delta] / R. Tichy ; K. Huang ; J. Goodenough
A Computational Investigation of Migration Enthalpies and Electronic Structure in SrFeO[subscript 3-[delta] / A. Predith ; G. Ceder
Mixed Conductivity in Nanocrystalline Undoped and Doped Cerium Oxide / T. Suzuki ; I. Kosacki ; H. Anderson
Synthesis of Ion Conducting Solids
From Molecules to Ceramics: Can We Monitor the Process? / S. Licoccia ; M. Di Vona
Synthesis and Characterization of Novel Ionoconductor Gels for Biomedical Applications in Space / P. Romagnoli ; L. Narici ; W. Sannita ; E. Traversa
Preparation of Y[subscript 2]O[subscript 3]ZrO[subscript 3] Nanoparticles by Gas-Phase Reaction and Wet Doping / B. Xia ; Y. Xie ; K. Okuyama
Solid State Fuel Cells
Increasing Power Density of Solid Oxide Fuel Cells Based on Thick-Film LSGM Electrolyte / J. Wan
The Influence of Electrode Configuration on the Performance of Electrode-Supported Solid Oxide Fuel Cells / B. Chung ; A. Pham ; J. Haslam ; R. Glass
Anode Microstructure Optimization for Solid Oxide Fuel Cells
Natural-Gas-Assisted Steam Electrolyzer for Distributed Hydrogen Production / H. Wallman
Solid State Sensors-Multicomponent Response
Sensing of Multicomponent Gases by Advanced Potentiometric and Kinetic Principles / E. Tsagarakis ; T. Metzing
Study of the Response of O[subscript 2] Sensors Based on ZrO[subscript 2]
Selective Detection of NO[subscript x] by Differential Electrode Equilibria / P. Jayaweera
Modeling the Response of Mixed Potential Electrochemical Sensors / F. Garzon ; R. Mukundan ; E. Brosha
Zironia-Based Mixed Potential CO/HC Sensors with LaMnO[subscript 3] and Tb-Doped YSZ Electrodes / D. Brown ; J. Visser ; D. Thompson ; D. Schonberg ; E. Logothetis
Hydrocarbon Sensors for Exhaust Gas Monitoring / S. Ejakov
Solid State Sensors-Alkaline Electrolyte/Electrode
Solid-State CO[subscript 2] Sensor with Lithium Ion Conductor and Li-Transition Metal Complex Oxide as Solid Reference Electrode / Y. Zhang ; M. Kaneko ; K. Uchida ; J. Mizusaki ; H. Tagawa
Determination of the Hole Conductivity of Sodium-Beta-Alumina by Potentiometric Measurements / H. Nafe ; S. Gollhofer ; F. Aldinger
Experimental Observations of a Thoria Oxygen Sensor in a Molten Salt System / S. Li ; S. Herrmann ; G. Knighton
Solid Electrolyte Sensors for NO[subscript 2] Detection Without Using a Reference Atmosphere / M. Grilli ; E. Di Bartolomeo ; H. Aono ; Y. Sadaoka ; E. Billi
Two Case Studies of Thick Film Sensing Devices: Some Critical Steps in the Processing of Screen Printed Sensors
Development of a Screen-Printed Planar Sensor for Environmental Monitoring / N. Kaabbuathong
Solid State Sensors-Nano to Meso Electrode Structures
Automotive Pollution Monitoring by an Array of Thick Film Gas Sensors from Nanosized Semiconducting Oxides / M. Carotta ; L. Crema ; G. Martinelli
Investigations Into Catalytic Properties of Nanostructured Surfaces Using In-Situ Drifts / X. Lu ; P. Faguy ; C. Xia ; M. Liu
Fabrication of a Highly Selective Sensor Using a Zeolite Semi-Permeable Membrane / W. Rauch ; G. Hunter
Mesoporous SnO[subscript 2] for CO[subscript 2] Sensors / F. Chen
NO[subscript x] Sensors Based on Interfacing Nano-Sized LaFeO[subscript 3] Perovskite-Type Oxide and Ionic Conductors / J. Yoon
Solid State Sensors-Novel
Field Effect Transistor Type Gas Sensor Coated with NaNO[subscript 2] for NO[subscript 2] Detection / K. Shimanoe ; S. Nakata ; N. Miura ; N. Yamazoe
Metal Oxide Stabilized Palladium Sensor for Hydrogen Detection / P. Liu ; S. Lee ; C. Tracy ; J. Pitts ; R. Smith
Solid State Sensors-Semiconducting
Solid State Chemical Sensors for CO / A. Azad
Surface Characterization of La[subscript 2]CuO[subscript 4]-CuO Composite Treated with H[subscript 2]S at PPM Level
Temperature Independent Resistance Response for Mixed Conducting SrFe[subscript y]Co[subscript z]O[subscript x] Thin Films / J. Tunney ; M. Post ; X. Du ; D. Yang
Gas Sensing Properties of Titanium Doped MoO[subscript 3] Thin Films Deposited by Reactive Sputtering / E. Comini ; G. Sberveglieri ; L. Casarotto ; M. Ferroni ; V. Guidi
Ti-W-O and Mo-W-O Thin Films Deposited by Reactive Sputtering as Gas Sensors / G. Benussi
Role of Transition Metal Oxides in the Development of Voltage Sensing Characteristics in Zinc Oxide Ceramics / A. Banerjee ; G. Banerjee ; T. Ramamohon ; M. Patni
Non-Ohmic Current-Voltage and Impedance Characteristics of Electroadsorptive Zn[subscript 2]SnO[subscript 4] / J. Yu ; G. Choi
Cation Transport in Solids
Lithium Ion Polymer Batteries / B. Scrosati
Negative Electrode Strategies for Lithium Systems / R. Huggins
editors, M. Cahay ... [et. al] ; [sponsored by] Dielectric Science and Technology, Electronics, and Luminescence and Display Materials Divisions [of the Electrochemical Society]
出版情報:
Pennington, N.J. : Electrochemical Society, c2001 viii, 280 p. ; 24 cm
Tip Self-Heating to Enhance Microfabricated Cold Cathode Operation Lifetime / P.R. Schwoebel ; C.A. Spindt ; C.E. Holland ; J.A. Panitz
Laser Assisted Fabrication of Single Crystalline Tungsten Rods for use as Field Emitting Cathodes / K. Larsson Bjorklund ; C. Ribbing ; H. Norde ; M. Boman
Theory of H Induced Enhancement of Field Emission from and O Covered Mo(110) Surface / P. von Allmen ; R. Ramprasad ; L.R.C. Fonseca ; P. Ordejon
Process Simulation of a Silicon Field Electron Emitter with Integrated Double-gated Beam Focusing Lens / G. Oleszek ; M. Rodriquez
Carbon Nanotubes
Carbon Nanotube Cold Cathodes Fabrication and Properties / C. Bower ; W. Zhu
Calculating the Field Emission Current from a Carbon Nanotube
Scanning Anode Field Emission Microscopy on Carbon Nanotube Thin Film Emitters / L.O. Nilsson ; O. Groenig ; P. Groenig ; L. Schlapbach
Template Based Carbon Nanotubes as A Field Emitter / S.-H. Jeong ; H.-Y. Hwang ; K.-H. Lee ; W.-K. Cho ; K.-Y. Kim ; H.-S. Jeong
Field Emission Cathode from Aligned Arrays of Carbon Nanotubes / A. Govyadinov ; P. Mardilovich ; D. Routkevich
Electron Emission Cooling
Cooling by Field Emission into the Vacuum with Resonant Tunneling: Design Parameters / R. Tsu
New Results on Microelectronic Cooling Using the Inverse Nottingham Effect: Low Temperature Operation and Efficiency / P.H Cutler ; N.M. Miskovsky ; N. Kumar ; M.S. Chung
Theory and Simulation
The Semiconductor Statistical Hyperbolic-Ellipsoidal Model For Evaluation of Current From Microstructures / K.L. Jensen
Non Equilibrium Field Emission from Wide Bandgap Semiconductors / G.L. Bilbro
Onset of Current Self-Quenching in an InP/CdS/LaS Cold Cathode / Y. Modukuru ; M. Cahay ; P.D. Mumford
Negative Electron Affinity/ Low Electron Affinity
Novel Electron Sources / V.T. Binh ; V. Semet ; J.P. Dupin
Effect of Surface Properties on Electron Energy Distribution from C(111) and C(100) Surfaces / J. Yater ; A. Shih
Synthesis and Work Function Measurement of LaS and NdS Bulk Samples / J. Thachery ; H. Tang ; P. Boolchand
Carbons, Diamond, and a-Silicon
Electron Emission from Carbon Films / R.J. Nemanich ; F.A.M. Kock ; J.M. Garguilo
Fabrication and Characterization of Cathodoluminescent Devices made Using Porous Silicon as a Cold-Cathode Field Emitter / D. Heyde Elqaq ; M.-A. Hasan
Monolithic Thin Film Edge Emission Diodes / H.R. Kim ; L. Karpov ; V. Bhatia ; M. Weichold
Electron Emission Characteristics of Diamond / B. Pate
Conditioning of Amorphous Cathodes via Current Stressing / S.R.P. Silva ; J.D. Carey ; C.H. Poa ; J.M. Shannon
Field Emission Display Development at Motorola / A.A Talin ; B.F.Coll. Yi Wei ; K.A. Dean ; J.E. Jaskie
Rehybridization of Atomic Orbitals and Field Emission Properties of Nanostructured Graphite-like Materials / A.N. Obraztsov ; A.P. Volkov ; A.I. Boronin ; S.V. Kosheev
Author Index
Subject Index
Preface
Field Emitter Arrays
Tip Self-Heating to Enhance Microfabricated Cold Cathode Operation Lifetime / P.R. Schwoebel ; C.A. Spindt ; C.E. Holland ; J.A. Panitz
Relation of Contact Resistance Reduction and Process Parameters of Bonded Copper Interconnects in Three-Dimensional Integration Technology / K.N. Chen ; A. Fan ; C.S. Tan ; R. Reif
ECD Seed Copper Layer for Seed Enhancement in Advanced Interconnects / P.H. Haumesser ; S. Da Silva ; M. Cordeau ; X. Avale ; O. Pollet ; T. Mourier ; G. Passemard ; R. Baskaran ; T. Ritzdorf
Ultra-thin Tungsten CVD Nucleation Layer for Sub-100 nm Contact Applications / J. Gupta ; J. Sudijono ; L.C. Hsia ; S. Singh
Three-Dimensional Simulation of Superconformal Copper Deposition Based on the Curvature-Enhanced Acceletator Coverage Mechanism / E. Bar ; J. Lorenz ; H. Ryssel
Copper Electrodeposition of High Aspect Ratio Vias for Three-Dimensional Packaging / K. Kondo ; T. Yonezawa ; M. Tomisaka ; H. Yonemura ; M. Hoshino ; Y. Taguchi ; K. Takahashi
Copper Electroplating Process with Improved Stability, Conductivity and Total. Cost of Ownership / R. Preisser ; T. Dretschkow ; H. Fuerhaupter
Electroplating of Copper-Tin Alloys / R. Chebiam ; C-C. Cheng ; H. Simka ; A. Budrevich ; V. Dubin
Interactions between the Conditions of Copper Electrodeposition and the Density of Hillocks / S. Petitdidier ; M. Gregoire ; S. Segaud ; S. Courtas ; M. Juhel ; J.P. Jacquemin ; L. Dumas
Detection of Accelerator Breakdown Products in Copper Plating Baths / M. Pavlov ; E. Shalyt ; P. Bratin ; D.M. Tench
Copper Nucleation on Platinum in the Presence of Additives in Acid Copper Solution / J. Han ; M. King ; M. Stawasz ; T. Baum
An in-situ FTIR Study on Palladium Displacement Reaction for Autocatalytic Electroless Copper Deposition / Y-J. Oh ; C-H. Chung
New Additives for Super-Conformal Electroplating of Ag Thin Film for ULSI / J.J. Kim ; E.J. Ahn ; J.M. Seo
The Role of Chloride Ion in Copper Electrodeposition from Acidic Baths Containing Cl[superscript -], PEG, and SPS / M. Tan ; J.N. Harb
The Influence of 2,2'-Dipyridyl on Non-Formaldehyde Electroless Copper Plating / J. Li ; H. Hayden ; P.A. Kohl
Influence of the Anode in the Damascene Process Investigated by Electro-Chemical Impedance Spectroscopy / C. Gabrielli ; P. Mocotrguy ; H. Perrot ; A. Zdunek ; D. Nieto-Sanz ; M.C. Clech
Investigation of Copper Bath Ageing in the Damascene Process by Electro-chemical Impedance Spectroscopy / P. Mocoteguy
Barrier Films
The Proposal of All-Wet Fabrication Process for ULSI Interconnects Technologies--Application of Electroless NiB Deposition to Capping and Barrier Layers / M. Yoshino ; Y. Nonaka ; T. Yokoshima ; T. Osaka
Thickness Effect on the Diffusion Barrier Properties of ZrN in Cu/ZrN/Si Systems / C-S. Chen ; C-P. Liu ; H-G. Yang ; C-Y. A. Tsao
Characterization of Electroless Plated CoWB Barrier Films / V. Mathew ; R. Chatterjee ; S. Garcia ; L. Svedberg ; Z-X. Jiang ; R. Gregory ; K-H. Lie ; K. Yu
Effect of Ta[subscript 2]N Crystallinity on Diffusion Barrier Properties / H-C. Chung
Use of Ti[subscript x]TiN as Cap Layer for the Formation of Cobalt Silicide / M. Vulpio ; D. Fazio ; M. Bileci ; D. Mello ; C. Gerardi
Ruthenium-Based Copper Diffusion Barrier: Studied by Electrochemistry, SIMS Depth Profiling, and Sheet Resistance Measurements / O. Chyan ; R. Chan ; T. Arunagiri ; R.M. Wallace ; M.J. Kim ; T. Hurd
Low-k Inter Level Dielectric Films and CMP
A Novel Approach for Dual Damascene Trench Etch for 90 nm Low-k Inter-Connect with No Middle Etch Stop Layer / T.Q. Chen ; H. Cong ; W.P. Liu ; Y.K. Siew ; Y. Pradeep ; R. Jaiswal ; A. Jain ; I. Sim
Electrical and Mechanical Properties of Nitrogen and Fluorine Incorporated Organosilicate Glass Prepared by Plasma Enhanced Chemical Vapor Deposition / S-K. JangJian ; W-S. Hwang ; S-W. Chen ; K-H. Wei ; Y-L. Wang
Development of Spin-on Dielectric (SiLK) Etch Process for 0.13 [mu] Cu-Low k Interconnects Technology / B. Ramana Murthy ; Y.W. Chen ; X.T. Chen
The Pore Structure, Property, and Performance of a Spin-on Porous Low-k Dielectric / Y. Liu ; B. Foran ; D. Gidley ; W-L. Wu ; H. Shirataki ; H. Hanahata
Evaluation of Low-k Porous Silica Film Incorporated with Ethylene Groups / Y. Uchida ; M. Oikawa ; Y. Itoh ; K. Ishida
Strip Process Optimization for Porous ULK Films / I.J. Kalinowski ; C. Bourlot ; A. Marfoure ; O. Louveau ; S. Li ; J. Su ; G.W. Hills ; D. Louis
Characterization of Plasma Strip Processes on OSG Low-k Dielectric Films / K. Ostrowski ; I.J. Kalinovski
Reliability Characterization of Organic Ultra Low-k Film Using Voltage Breakdown / A. Krishnamoorthy ; B. Ramany Murthy ; K.Y. Yiang ; W.J. Yoo
Process-Induced Voiding in Copper Interconnect Metallization / P. Lindgren ; K. Downes ; S. Kole ; W. Murphy ; E. Cooney III ; M. Goldstein ; J. Chapple-Sokol
Planarization of Copper Layer for Damascene Interconnection by Electrochemical Polishing in Alkali-Based Solution / G-S. Park ; C-W. Chung
Characterization of a Colloidal Silica Slurry for 0.13 [mu]m Devices in a Copper CMP Process / J. Cadenhead ; G. Huffman ; D. Lewis ; A. Pamatat ; J. Verizzo ; S. Usmani ; J. Siddiqui
Mechanisms of Using Organic Acids to Clean Copper Surfaces / T. Yagishita ; K. Ishikawa ; M. Nakamura
Advanced Packaging
3-Dimensional Chip Stacking for High-Density Electronic Packaging / K. Tanida ; M. Umemoto ; K. Kojiama ; M. Ishino ; M. Bonkohara
Author Index
Subject Index
Preface
Copper Deposition
Relation of Contact Resistance Reduction and Process Parameters of Bonded Copper Interconnects in Three-Dimensional Integration Technology / K.N. Chen ; A. Fan ; C.S. Tan ; R. Reif
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