Preface |
Plasma Enhanced Deposition |
Process and Material Properties of PECVD Boron-doped Amorphous Silicon Films / H. Nominanda ; Y. Kuo |
Properties of Boron-doped Amorphous Silicon Films Obtained with a Low Frequency Plasma / A. Heredia-J ; A. Torres-J ; A. Jaramillo-N ; F.J. De la Hidalga-W ; C. Zuniga-I ; A. Munguia-C |
Si Epitaxial Growth on Atomic-Order Nitrided Si (100) using an ECR Plasma / M. Mori ; T. Seino ; D. Muto ; M. Sakuraba ; J. Murota |
Optimizing Pulse Protocols in Plasma-Enhanced Atomic Layer Deposition / V. Prasad ; M.K. Gobbert ; T.S. Cale |
High Density Plasma Deposited Silicon Nitride Films for Coating InGaAlAs High-Power Lasers / R.E. Sah ; F. Rinner ; R. Keifer ; M. Mikulla ; G. Weimann |
High Productivity 300 mm HDP-CVD for Next-Generation Gap Fill Processes / B. Geoffrion ; N. Dubey ; P. Krishnaraj |
Modeling & Mechanisms |
Plasma Hydrogenation of a Buried Trap Layer in Silicon: Formation of a Platelet Layer / A.Y. Usenko ; W.N. Carr ; B. Chen |
Integrated Modeling Investigation of Plasma Dielectric Etching Processes / D. Zhang ; S. Rauf ; T.G. Sparks ; P.L.G. Ventzek |
Plasma-Surface Kinetics and Feature Profile Evolution in Cl[subscript 2] + HBr Etching of Poly-silicon / W. Jin ; S.A. Vitale ; H.H. Sawin |
Surface Treatment of SiC using NF[subscript 3]/O[subscript 2] Plasmas / T. Kai ; W. Shimizu ; A. Hibi ; T. Iwase ; T. Abe ; M. Inaba ; Z. Ogumi ; T. Tojo ; A. Taska |
Quantitative Analysis and Comparison of Endpoint Detection Based on Multiple Wavelength Analysis - Part I: Multi-Wavelength Method / B.E. Goodlin ; D.S. Boning |
Quantitative Analysis and Comparison of Endpoint Detection Based on Multiple Wavelength Analysis - Part II: Noise Analysis of Multi-Wavelength OES |
Equipment / Plasma Etching II: |
Investigations of 300 mm Wafer Tool Set Progress and Performance / K. Mautz |
Simultaneous Fault Detection and Classification for Semiconductor Manufacturing Tools / B.M. Wise |
Effects of Showerhead Face Chemistry on Capacitively Coupled Plasma Discharges / B. Devulapalli ; G.I. Font |
Gate Dielectrics and Silicon / Plasma Etching III: |
Differential Surface Charging of the Dielectric during Plasma Etching and Surface Charge Leakage Kinetic / M.K. Abatchev ; B.J. Howard ; D.S. Becker ; R.L. Stocks ; J. Chapman |
Thickness Scaling of Gate Dielectric on Plasma Charging Damage in MOS Devices / K-S. Chang-Liao ; P-J. Tzeng |
Gate Oxide Integrity and Micro-loading Characterization of 300 mm Process Tools |
Measurement of Device Charging Damage in a Dielectric Etch 300 mm Chamber with a Bias Voltage Diagnostic Cathode / M.C. Kutney ; S. Ma ; K. Horioka ; R. Lindley ; S. Kats ; T. Kropewnicki ; K. Doan ; H. Shan |
Etching of High-k Gate Dielectrics and Gate Metal Candidates / S.K. Han ; I. Kim ; H. Zhong ; G.P. Heuss ; J.H. Lee ; D. Wicaksana ; J.P. Maria ; V. Misra ; C.M. Osburn |
Etching High Aspect Ratio Silicon Trenches / S. Panda ; R. Ranade ; G.S. Mathad |
Inverse Micro-loading Effect in Reactive Ion Etching of Silicon / S. Jensen ; O. Hansen |
Plasma Etched Micro-machined Silicon Stampers for Plastic Bio-Technology Applications / D. Weston ; W.J. Dauksher ; D. Rhine ; T. Smekal ; P.J. Stout |
Silicon Dioxide / Plasma Etching IV: |
Radical Control in a Hole to Break an Etch-Stop Barrier in Highly Selective HAC Etching / N. Negishi ; K. Yokogawa ; T. Yoshida ; M. Izawa |
Etching vs Deposition: The Effect on Profiles and Etching Yield Curves for Oxide Etching / O. Kwon |
Dual Damascene, Low-k / Plasma Etching V: |
Effect of Oxygen and Nitrogen Additions on Silicon Nitride Reactive Ion Etching in Fluorine Containing Plasmas / C. Reyes-Betanzo ; S.A. Moshkalyov ; A.C.S. Ramos ; M.A. Cotta ; J.W. Swart |
A Novel Approach to Reduce Via Corner Faceting in the Via-First, No Middle Stop Layer Dual Damascene Trench Etch / Y-S. Kim ; K.L. Doan ; C. Bjorkman ; A. Paterson ; Z. Sui |
Patterning 180 nm Copper Oxide Dual Damascene Baseline with 193 nm Resists / V. Bakshi ; G. Smith |
Copper Fine Patterns Etched with HBr Plasma Based Processes / S. Lee |
Intellectual Property Creation from Semiconductor Process and Equipment Development |
Author Index |
Subject Index |
Preface |
Plasma Enhanced Deposition |
Process and Material Properties of PECVD Boron-doped Amorphous Silicon Films / H. Nominanda ; Y. Kuo |