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1.

図書
図書
1. High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium
editors, A.G. Baca, R.F. Kopf
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 214 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-18
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Preface
Symposium Organizers
State-of-the-art Program on Compound Semiconductors (XXXIII)
InP HBT and HEMT Technology and Applications / A. Gutierrez-Aitken ; A. K. Oki ; D. C. Streit ; R. Lai ; D. Sawdai ; Y. C. Chen ; E. Kaneshiro ; R. Grundbacher ; P. C. Grossman ; T. Block ; P. Chin ; M. Barsky ; M. Wojtowicz ; H. C. Yen
Reduced Area InGaAs/InP HBT Device Fabrication for High Speed Circuit Applications / R. F. Kopf ; N. G. Weimann ; R. A. Hamm ; R. W. Ryan ; A. Tate ; M. A. Melendes ; R. Melendes ; Q. Lee ; G. Georgiou ; Y. Baeyens ; Y-K. Chen
Non-Crystallographic Wet Etching of Gallium Arsenide / A. G. Baca ; J. R. Laroche ; P. C. Chang ; F. Ren
Chemical Etching Behavior of n-AlGaAs/p-AlGaAs Structures under Different Light Illumination Conditions / K. Shigyo ; Z. Kawazu
Progress in Mid-IR Type-II Interband Cascade Lasers / R. Q. Yang ; J. L. Bradshaw ; J. D. Bruno ; J. T. Pham ; D. E. Wortman
Development of III-Nitrides for Near-Infrared Optoelectronics using Intersubband Transitions / H. M. Ng ; C. Gmachl ; S. N. G. Chu ; A. Y. Cho
Visible Vertical Cavity Light Emitters for Fibre Optical Communication / M. Saarinen ; V. Vilokkinen ; P. Sipilo ; N. Xiang ; S. Orsila ; M. Guina ; P. Melanen ; M. Dumitrescu ; P. Uusimaa ; P. Savolainen ; M. Pessa
Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors / N. Y. Li ; E. Armour ; P. R. Sharps ; H. Q. Hou
Antimonide-Based Long-Wavelength Lasers on GaAs Substrates / J. F. Klem ; O. Blum
Novel MOS Schemes for Electronic Devices with Photoanodically Grown Oxides on GaN Surfaces / D. Mistele ; T. Rotter ; R. Ferretti ; H. Klausing ; F. Fedler ; O. K. Semchinova ; J. Stemmer ; J. Aderhold ; J. Graul
GaN Power Devices / S. J. Pearton ; A. P. Zhang ; G. Dang ; X. A. Cao ; K. P. Lee ; H. Cho ; B. P. Gila ; J. W. Johnson ; C. Monier ; C. R. Abernathy ; J. Han ; J.-I. Chyi ; C.-M. Lee ; T.-E. Nee ; C.-C. Chuo ; G. C. Chi
Fabrication of an Integrated Optics 1 to 2 Optical Switch / Y. Hernandez ; J.-P. Vilcot ; D. Decoster ; J. Chazelas
Optical Characterization of Acceptor Implantation in GaN / B. J. Skromme ; G. L. Martinez ; A. Suvkhanov ; L. Krasnobaev ; D. B. Poker
Cantilever Epitaxy: A Simple Lateral Growth Technique for Reducing Dislocation Densities in GaN and Other Nitrides / C. I. H. Ashby ; C. C. Willan ; N. A. Missert ; P. P. Provencio ; D. M. Follstaedt ; G. M. Peake ; L. Griego
The Formation Mechanism of SiC/Si Interface in the Growth of SiC Films on Si / K. S. Nahm ; K. C. Kim ; C. I. Park ; J. I. Roh
SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors / B. Luo ; J. I. Chyi ; T. E. Nee ; C. M. Lee ; C. C. Chuo ; T. J. Anderson
The Effect of N2 Plasma Damage on DC and RF Characteristics of HEMTs / V. P. Trivedi ; C. H. Hsu ; X. Cao ; C. S. Wu ; M. Hoppe ; J. Sasserath ; J. W. Lee
High Speed Devices for Wireless Applications II
III V Enhancement Mode Field Effect Transistor Technologies for Cellular Applications / J. Costa
Indium Phosphide HBT Device Parameter Extraction for Spice Modeling and Process Optimization / J.-M. Kuo ; M. Melendes ; Y. K. Chen
The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors
Fabrication and Materials Characterization of Pulsed Laser Deposited Nickel Silicide Ohmic Contacts to 4H n-SiC / M. W. Cole ; P. C. Joshi ; C. W. Hubbard ; E. Ngo ; J. D. Demaree ; J. K. Hirvonen ; M. Wood ; M. Ervin ; C. J. K. Richardson ; M. H. Wisnioski
Author Index
Subject Index
Preface
Symposium Organizers
State-of-the-art Program on Compound Semiconductors (XXXIII)
2.

図書
図書
2. Low and High Dielectric Constant Materials : Materials Science, Processing, and Reliability Issues, proceedings of the fourth International Symposium and Thin Film Materials for Advanced Packaging Technologies : proceedings of the second International Symposium
editors, R. Singh ... [et al.] ; [sponsord by] Dielectric Science and Technology and Electronics Divisions
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 226 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-7
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3.

図書
図書
3. Molten Salts XII : proceedings of the International Symposium
editors, P.C. Trulove ... [et al.]
出版情報: Pennington, N.J. : The Electrochemical Society, c2000  xiv, 758 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-41
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4.

図書
図書
4. Diamond materials : proceedings of the sixth international symposium
editors, J.L. Davidson ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2000  xiv, 532 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-32
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5.

図書
図書
5. Chemical mechanical planariarization in IC device manufacturing III : proceedings of the international symposium
editors, R.L. Opila ... [et al.]
出版情報: Pennington, N. J. : Electrochemical Society, c2000  xii, 644 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-37
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6.

図書
図書
6. High temperature corrosion and materials chemistry : proceedings of the Per Kofstad Memorial Symposium
editors M. McNallan ... [et al.]
出版情報: Pennington, New Jersey : Electrochemical Society, c2000  xii, 580 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-38
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7.

図書
図書
7. Rapid thermal and other short-time processing technologies : proceedings of the international symposium
editors, Fred Roozeboom ... [et al.]
出版情報: Pennington, NJ : Electrochemical Society, c2000  xii, 462 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-9
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目次情報: 続きを見る
Preface
Conference organization
Ultra-Shallow Junctions for Nanoscale CMOS / Section I：
High Ramp Rate Rapid Thermal Annealing for Ultra-Shallow Junctions / P. Kohli ; H.-J. Li ; S. Ganguly ; T. Kirichenko ; B. Murto ; E. Graetz ; P. Zeitzoff ; M. Pawlik ; P.B. Merrill ; S. Banerjee1.：
New Physics for Modeling Transient Enhanced Diffusion in RTP / M.Y.L. Jung ; R. Gunawan ; R.D. Braatz ; E.G. Seebauer2.：
Optical Effects in Diffusion and Activation Processes During RTA / R.B. Fair3.：
Spike Annealing for Ultra-Shallow Junction Formation / A. Jain4.：
Inherent Radiative Differences between Rapid Thermal and Furnace Annealing: Their Effects on Dopant Diffusion and Activation / P.S.-J. Choi ; D.-L. Kwong5.：
Ultra-Shallow Junction Formation Using Ion Implantation and Rapid Thermal Annealing: Physical and Practical Limits / A. Agarwal ; H.-J.L. Gossmann ; A.T. Fiory ; V.C. Venezia ; D.C. Jacobson6.：
Role of Silicon and Boron Interstitial Clusters in Transient Enhanced Diffusion / N.E.B. Cowern ; G. Mannino ; F. Roozeboom ; J.G.M. van Berkum ; B. Colombeau ; A. Claverie7.：
Ultra-Shallow P[superscript +]-N Junctions for 35-70 nm CMOS using Selectively Deposited Very Heavily Boron-doped Silicon-Germanium Films / S. Gannavaram ; M.C. Ozturk8.：
Selective Epitaxial Si and SiGe for Elevated Source Drain MOSFETs / S.B. Samavedam ; A. Dip ; A.M. Phillips ; J. Smith ; J.M. Grant ; W.J. Taylor ; P.J. Tobin9.：
Laser Thermal Processing (LTP) for Fabrication of Ultra-Shallow, Hyper-Abrupt, Highly Activated Junctions for Deca-Nanometer MOS Transistors / S. Talwar ; Y. Wang ; C. Gelatos10.：
Athermal Annealing of Silicon Implanted with Phosphorus and Arsenic / J. Grun ; R.P. Fischer ; M. Peckerar ; C.L. Felix ; B.C. Covington ; D.W. Donnelly ; B. Boro Djordjevic ; R. Mignogna ; J.R. Meyer ; A. Ting ; C.K. Manka11.：
Exploring Alternative Annealing Methods for Shallow Junction Formation in Ion Implanted Silicon / K.S. Jones ; H. Banisaukis ; S. Earles ; C. Lindfors ; M. Griglione ; M.E. Law ; S.W. Falk ; D.F. Downey12.：
Shallow Junction Challenges to Rapid Thermal Processing / L. Larson13.：
Contacts for Nanoscale CMOS / Section II：
Aspects of Enhanced Titanium Salicide Formation / L. Kappius ; R.T. Tung14.：
Multi-Substrate CoSi[subscript 2] Formation Kinetics in a Low-Pressure, Susceptor-Based RTP Tool / A.J. Atanos ; V. Parihar ; S.-P. Sun15.：
Metal / Silicon Schottky Barrier Lowering by RTCVD Interface Passivation / Q.W. Ren ; W.D. van Noort ; L.K. Nanver ; J.W. Slotboom16.：
Gate Stacks for Nanoscale CMOS / Section III：
Ultrathin CVD Gate Dielectrics for 130 nm Technology Node / V.H.C. Watt ; A. Karamcheti ; T.-Y. Luo ; H.N. Al-Shareef ; M.D. Jackson ; H.R. Huff17.：
High Performance, Highly Reliable Gate Oxide Formed with Rapid Thermal Oxidation In-Situ Steam Generation (ISSG) Technique / Y. Ma ; Y.N. Chen ; M.M. Brown ; F. Li ; Y. Chen ; J. Eng, Jr. ; R.L. Opila ; Y.J. Chabal ; J. Sapjeta ; D.A. Muller ; G.C. Xing ; T. Trowbridge ; M. Khau ; N. Tam18.：
High Reliable In Situ Steam Generation Process for 1.5-2.5 nm Gate Oxides / M. Bidaud ; F. Guyader ; F. Glowacki ; F. Monsieur ; D. Roy ; S. Bruyere ; E. Vincent ; K. Barla19.：
Investigation of In-Situ Steam Generated Oxide (ISSG) followed by Remote Plasma Nitridation (RPN) for Effective Oxide Thickness Decrease and Gate Leakage Reduction / K. Eason ; R. Jallepally ; D. Noble ; S. Mattangady ; R. Khamankar ; A.L.P. Rotondaro20.：
Rapid Thermal Processing Using Steam / R. Sharangpani ; J.H. Das ; S.-P. Tay21.：
Corona-Charge Evaluation of Thermal SiO[subscript 2] Growth by Single-Wafer and Batch Methods / A. Fiory ; J. Zhang ; P. Frisella ; J. Hebb22.：
Growth of Ultrathin Nitride on Si(100) by Rapid Thermal N[subscript 2] Treatment / Z.H. Lu ; A. Khoueir ; W. T. Ng23.：
Gate Dielectrics Formed by Remote Plasma Nitridation of Ultrathin In-Situ Steam Generated (ISSG) Oxides / T.Y. Luo ; G.A. Brown ; M. Laughery ; K. Torres ; K. Ahmed ; R. Jallepally|cD. Noble ; G. Miner24.：
In-situ Rapid Thermal N[subscript 2]O Oxidation of NH[subscript 3]-Nitrided Si for Ultrathin Nitride/Oxide Stack Gate Formation / Y.H. Kim ; S.C. Song ; H.F. Luan ; J.C. Gelpey ; A. Kepton ; S. Levy ; R. Bloom25.：
Processing and Characterization of RTCVD Silicon Nitride and Oxynitride Grown in a Single-Wafer RT Cluster Tool / C.P. D'Emic ; E.P. Gusev ; J. Newbury ; P. Kozlowski ; K. Chan ; T. Zabel ; P. Varekamp26.：
Integrated Rapid Thermal CVD Oxynitride Gate Dielectric for Advanced CMOS Technology / H.-H. Tseng27.：
Ultrathin (EOT [ 7 A) Ta[subscript 2]O[subscript 5] Gate Stacks Prepared by an In-Situ RT-MOCVD Process / S.J. Lee ; C.H. Lee ; Y. Senzaki ; D. Roberts28.：
High-k Oxides by Atomic Layer Chemical Vapour Deposition / M. Tuominen ; T. Kanniainen ; S. Haukka29.：
Electrical and Chemical Properties of Ultrathin RT-MOCVD Grown Ti-Doped Ta[subscript 2]O[subscript 5] / A. Mao ; T.S. Jeon ; R. Vrtis30.：
Electrical and Material Properties of Metal Silicate Dielectrics and Metal Gates for Advanced CMOS Devices / V. Misra ; M. Kulkarni ; G. Heuss ; H. Zhong ; H. Lazar31.：
RTCVD Polysilicon Grain Dimension Control / D. O'Meara ; J. Conner ; M. Rossow ; T. Neil ; V. Wang ; C.-L. Chang32.：
New Applications of RTP / Section IV：
Mechanisms and Applications of the Control of Dopant Profiles in Silicon Using Si[subscript 1-x-y] Ge[subscript x]C[subscript y] Layers Grown by RTCVD / J.C. Sturm ; M.S. Carroll ; M. Yang ; J. Gray ; E. Stewart33.：
High Performance Buried Silicon-Germanium Channel PMOST Fabricated Using Rapid Thermal Processing and Shallow Trench Isolation / D.J. Tweet ; S.T. Hsu ; D.R. Evans ; B. Ulrich ; Y. Ono ; L. Stecker34.：
Kinetic Study of In-Situ Copper Oxidation and Reduction Using Rapid Thermal Processing and Its Applications in ULSI / Y.Z. Hu35.：
Development of an RTA Process for the Enhanced Crystallization of Amorphous Silicon Thin Films / Y.-G. Yoon ; T.-K. Kim ; K.-B. Kim ; J.-Y. Choi ; B.-I. Lee ; S.-K. Joo36.：
Advances in RTP Systems and Process Monitoring / Section V：
Optimization of Support Temperature in RTA-Tools by Scanning Infrared Depolarization Imaging of Monitor Wafers / H.-D. Geiler ; H. Karge ; B. Krimbacher37.：
Wafer Temperature Characterization During Low-Temperature Annealing / W.S. Yoo ; T. Fukada38.：
Determining the Uncertainty of Wafer Temperature Measurements Induced by Variations in the Optical Properties of Common Semiconductor Materials / B. Adams ; A. Hunter ; M. Yam ; B. Peuse39.：
Low-Temperature Measurements and Monitors for Rapid Thermal Processing / P.J. Timans ; N. Acharya ; I. Amarilio40.：
In Situ Selectivity and Thickness Monitoring based on Quadrupole Mass Spectroscopy during Selective Silicon Epitaxy / E.A. Rying ; G.L. Bilbro ; J.C. Lu41.：
Optimization and Control of Gas Flows in an RTCVD Reactor / Y. Rainova ; K. Antonenko ; A. Barchotkin ; J. Pezoldt42.：
LEVITOR 4000: An Advanced RTP System Based on Conductive Heat Transfer / V.I. Kuznetsov ; A.B. Storm ; G.J. Snijders ; C. de Ridder ; T.A.M. Ruijl ; J.C.G. van der Sanden ; E.H.A. Granneman43.：
Ultra-Shallow Junction Formation of BF[subscript 2 superscript +] Implants Using a Low-Pressure, Hot-Wall Rapid Thermal Anneal / K. Reddy ; J.-F. Daviet44.：
Temperature Gradient Rapid Thermal Processor / J.-M. Dilhac ; C. Ganibal45.：
Spike Thermal Processing Using Arc-Lamps / D.M. Camm ; M.E. Lefrancois46.：
Novel High Ramp-Down Rate and Reflector Design in Rapid Thermal Processing / M.H. Lee ; C.W. Liu47.：
Improved Performance of a Fast-Ramp RTA System through Recipe and Controller Optimization / S. Ramamurthy ; A. Mayur ; D. de Roover ; J.L. Ebert48.：
Author Index and Key Word Index / Section VI：
Author Index
Key Word Index
Preface
Conference organization
Ultra-Shallow Junctions for Nanoscale CMOS / Section I：
8.

コンピュータファイル
コンピュータファイル
8. Meeting abstracts. CD-ROM ed
Electrochemical Society. Meeting
出版情報: Pennington, N.J. : Electrochemical Society  CD-ROMs ; 12 cm
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