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1.

図書

図書
editors, A.G. Baca, R.F. Kopf
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 214 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2000-18
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Preface
Symposium Organizers
State-of-the-art Program on Compound Semiconductors (XXXIII)
InP HBT and HEMT Technology and Applications / A. Gutierrez-Aitken ; A. K. Oki ; D. C. Streit ; R. Lai ; D. Sawdai ; Y. C. Chen ; E. Kaneshiro ; R. Grundbacher ; P. C. Grossman ; T. Block ; P. Chin ; M. Barsky ; M. Wojtowicz ; H. C. Yen
Reduced Area InGaAs/InP HBT Device Fabrication for High Speed Circuit Applications / R. F. Kopf ; N. G. Weimann ; R. A. Hamm ; R. W. Ryan ; A. Tate ; M. A. Melendes ; R. Melendes ; Q. Lee ; G. Georgiou ; Y. Baeyens ; Y-K. Chen
Non-Crystallographic Wet Etching of Gallium Arsenide / A. G. Baca ; J. R. Laroche ; P. C. Chang ; F. Ren
Chemical Etching Behavior of n-AlGaAs/p-AlGaAs Structures under Different Light Illumination Conditions / K. Shigyo ; Z. Kawazu
Progress in Mid-IR Type-II Interband Cascade Lasers / R. Q. Yang ; J. L. Bradshaw ; J. D. Bruno ; J. T. Pham ; D. E. Wortman
Development of III-Nitrides for Near-Infrared Optoelectronics using Intersubband Transitions / H. M. Ng ; C. Gmachl ; S. N. G. Chu ; A. Y. Cho
Visible Vertical Cavity Light Emitters for Fibre Optical Communication / M. Saarinen ; V. Vilokkinen ; P. Sipilo ; N. Xiang ; S. Orsila ; M. Guina ; P. Melanen ; M. Dumitrescu ; P. Uusimaa ; P. Savolainen ; M. Pessa
Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors / N. Y. Li ; E. Armour ; P. R. Sharps ; H. Q. Hou
Antimonide-Based Long-Wavelength Lasers on GaAs Substrates / J. F. Klem ; O. Blum
Novel MOS Schemes for Electronic Devices with Photoanodically Grown Oxides on GaN Surfaces / D. Mistele ; T. Rotter ; R. Ferretti ; H. Klausing ; F. Fedler ; O. K. Semchinova ; J. Stemmer ; J. Aderhold ; J. Graul
GaN Power Devices / S. J. Pearton ; A. P. Zhang ; G. Dang ; X. A. Cao ; K. P. Lee ; H. Cho ; B. P. Gila ; J. W. Johnson ; C. Monier ; C. R. Abernathy ; J. Han ; J.-I. Chyi ; C.-M. Lee ; T.-E. Nee ; C.-C. Chuo ; G. C. Chi
Fabrication of an Integrated Optics 1 to 2 Optical Switch / Y. Hernandez ; J.-P. Vilcot ; D. Decoster ; J. Chazelas
Optical Characterization of Acceptor Implantation in GaN / B. J. Skromme ; G. L. Martinez ; A. Suvkhanov ; L. Krasnobaev ; D. B. Poker
Cantilever Epitaxy: A Simple Lateral Growth Technique for Reducing Dislocation Densities in GaN and Other Nitrides / C. I. H. Ashby ; C. C. Willan ; N. A. Missert ; P. P. Provencio ; D. M. Follstaedt ; G. M. Peake ; L. Griego
The Formation Mechanism of SiC/Si Interface in the Growth of SiC Films on Si / K. S. Nahm ; K. C. Kim ; C. I. Park ; J. I. Roh
SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors / B. Luo ; J. I. Chyi ; T. E. Nee ; C. M. Lee ; C. C. Chuo ; T. J. Anderson
The Effect of N2 Plasma Damage on DC and RF Characteristics of HEMTs / V. P. Trivedi ; C. H. Hsu ; X. Cao ; C. S. Wu ; M. Hoppe ; J. Sasserath ; J. W. Lee
High Speed Devices for Wireless Applications II
III V Enhancement Mode Field Effect Transistor Technologies for Cellular Applications / J. Costa
Indium Phosphide HBT Device Parameter Extraction for Spice Modeling and Process Optimization / J.-M. Kuo ; M. Melendes ; Y. K. Chen
The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors
Fabrication and Materials Characterization of Pulsed Laser Deposited Nickel Silicide Ohmic Contacts to 4H n-SiC / M. W. Cole ; P. C. Joshi ; C. W. Hubbard ; E. Ngo ; J. D. Demaree ; J. K. Hirvonen ; M. Wood ; M. Ervin ; C. J. K. Richardson ; M. H. Wisnioski
Author Index
Subject Index
Preface
Symposium Organizers
State-of-the-art Program on Compound Semiconductors (XXXIII)
2.

図書

図書
editors, R. Singh ... [et al.] ; [sponsord by] Dielectric Science and Technology and Electronics Divisions
出版情報: Pennington, N.J. : Electrochemical Society, c2000  viii, 226 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 99-7
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3.

図書

図書
editors, P.C. Chang ... [et al.] ; sponsoring division, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2002  ix, 326 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-14
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4.

図書

図書
editors, P.C. Chang, S.N.G. Chu, D.N. Buckley
出版情報: Pennington, N.J. : Electrochemical Society, c2001  viii, 164 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-20
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5.

図書

図書
editor, G.S. Mathad ; assistant editors, M. Engelhardt ...[et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  viii, 216 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-24
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6.

図書

図書
editos, J.D. Sinclair ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  xviii, 1162 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-22
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7.

図書

図書
editors, R.K. Kopf ... [et al.] ; sponsoring divisions, Electronics, Sensor
出版情報: Pennington, N.J. : Electrochemical Society, c2002  ix, 362 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-3
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8.

図書

図書
editor, G.S. Mathad ; assistant editors, B.C. Baker ... [et al.] ; sponsoring divisions, Dielectric Science and Technology, Electronics, Electrodeposition
出版情報: Pennington, N.J. : Electrochemical Society, c2003  ix, 346 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-22
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9.

図書

図書
editors, R.E. Sah ... [et al.] ; sponsoring divisions, Dielecric Scoeice and Technology, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2003  xii, 636 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-2
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目次情報: 続きを見る
Preface
Interface Characterization / I.:
Electrical Characterization Techniques for Semiconductor-Silicon Dioxide Interface - A Review / M.J. Deen
Si-SiO[subscript 2] Interface Trap Properties and Dependence with Oxide Thickness and with Electrical Stress in MOSFET's with Oxides in the 1-2 nm Range / D. Bauza ; F. Rahmoune
EPR Studies of SiC/SiO[subscript 2] Interfaces in n-type 4H-and 6H- Oxidized Porous SIC / H.J. von Bardeleben ; J.L. Cantin ; M. Mynbaeva ; S.E. Saddow ; Y. Shishkin ; R.P. Devaty ; W.J. Choyke
Related Oxides / II.:
Novel Germanium Technology and Devices for High Performance MOSFETs and Integrated On-Chip Optical Clocking / K.C. Saraswat ; C.O. Chui ; P.C. McIntyre ; B.B. Triplett
Properties of Ultrathin High-k Dielectrics on Si Probed by Electron Spin Resonance-Active Defects: Interfaces and Interlayers / A. Stesmans ; V.V. Afanas'ev
Role of Ultra Thin Silicon Oxide Interfacial Layer in High Performance High Dielectric Constant Gate Dielectrics / R. Singh ; M. Fakhruddin ; K.F. Poole ; S.V. Kondapi ; A. Gupta ; J. Narayan ; S. Kar
Quantum Mechanical Modeling of Capacitance-Voltage and Current-Voltage Behavior for SiO[subscript 2] and High-k Dielectrics / L.F. Register ; Y.-Y. Fan ; S.P. Mudanai ; S.K. Banerjee
Thermally Driven Atomic Transport in Silicon Oxynitride and High-k Films on Silicon / I.J.R. Baumvol ; F.C. Stedile ; J. Morais ; C. Krug ; C. Radtke ; E.B.O da Rosa ; K.P. Bastos ; R.P. Pezzi ; L. Miotti ; G.V. Soares
Investigations of the Structure and Stability of Alternative Gate Dielectrics / S. Stemmer ; Z.Q. Chen ; P.S. Lysaght ; J.A. Gisby ; J.R. Taylor
Comparison of Contamination Effects in Silicon Oxide with that in Hafnium Oxide and Zirconium Oxide Gate Dielectrics / F. Shadman ; P. Raghu ; N. Rana ; C. Yim ; E. Shero
Characteristics of Metal Gate MOS Capacitor with Hafnium Oxynitride Thin Film / K.-J. Choi ; S.-G. Yoon
Charge Trapping in High-Dose Ge-Implanted and Si-Implanted Silicon-Dioxide Thin Films / A.N. Nazarov ; I.N. Osiyuk ; I.P. Tyagulskii ; V.S. Lysenko ; T. Gebel ; W. Skorupa
Film Application / Device Characterization / Reliability / III.:
What Can Low-frequency Noise Learn us About the Quality of Thin-gate Dielectrics? / E. Simoen ; A. Mercha ; C. Claeys
Analysis of Short-channel MOSFET Behavior after Gate Oxide Breakdown and its Impact on Digital Circuit Reliability / G. Groeseneken ; B. Kaczer ; R. Degraeve
Cyanide Treatment to Improve Electrical Characteristics of Si-based MOS Diodes with an Ultrathin Oxide Layer / H. Kobayashi ; T. Kobayashi ; A. Asano ; O. Maida ; M. Takahashi
Process Dependence of Negative Bias Temperature Instability in PMOSFETS / S. Prasad ; E. Li ; L. Duong
Silicon Dioxide Insulating Films for Silicon-Germanium Technology / A. Vijh ; V.J. Kapoor ; R.L. Patterson ; J.E. Dickman
New Reliability Issues of CMOS Transistors with 1.3nm Thick Gate Oxide / M.F. Li ; B.J. Cho ; G. Chen ; W.Y. Loh ; D.L. Kwong
Improved Performance With Low Temperature Silicon Nitride Spacer Process / C.M. Reddy ; S.G.H. Anderson
Interface Studies / Defects / IV.:
Growth of SiO[subscript 2] at the Sc[subscript 2]O[subscript 3]/Si(100) Interface During Annealing / G.A. Botton ; E. Romain ; D. Landheer ; X. Wu ; M.-Y. Wu ; M. Lee ; Z.-H. Lu
A Review of Defect Generation in the SiO[subscript 2] and at Its Interface with Si / J.F. Zhang
Dipoles in SiO[subscript 2]: Border Traps or Not? / D.M. Fleetwood ; S.N. Rashkeev ; Z.Y. Lu ; C.J. Nicklaw ; J.A. Felix ; R.D. Schrimpf ; S.T. Pantelides
Stabilities and Electronic States of Incorporated Nitrogen Atoms at the Interface of SiO[subscript 2]/Si(001) / T. Yamasaki ; C. Kaneta
Electrical Properties and the Reliability of Silicon Nitride Gate Dielectrics Formed by Various Processes and Annealing Treatments / K.-S. Chang-Liao ; J.Y Pan ; C.L. Cheng ; T.K. Wang
Electronically Active Defects in Utra-thin Oxynitride Gate Dielectrics / D.A. Buchanan
Nitrogen Content and Interface Trap Reduction in SiO[subscript 2]/4H-SiC / K. McDonald ; R.A. Weller ; L.C. Feldman ; G.Y Chung ; C.C. Tin ; J.R. Williams
Cathodoluminescence of Thin Films of Silicon Oxide on Silicon / M.V. Zamoryanskaya ; V.I. Sokolov ; I.M. Kotina ; C.G. Konnikov
Predictive Simulation of Void Formation during the Deposition of Silicon Nitride and Silicon Dioxide Films / C. Heitzinger ; A. Sheikholeslami ; H. Puchner ; S. Selberherr
Film Preparation and Characterization I / V.:
Direct-Write Deposition of Silicon Oxide - The Express Lane towards patterned thin Films / H.D. Wanzenboeck ; S. Harasek ; E. Bertagnolli ; M. Gritsch ; H. Hutter ; J. Brenner ; H. Stoeri ; U. Grabner ; G. Hammer ; P. Pongratz
Comprehensive Optical and Compositional Characterization of Silicon-based Thin Films for Photonics / J. Wojcik ; E.A. Irving ; J.A. Davies ; W.N. Lennard ; P. Mascher
Hydrogenated Amorphous Silicon Nitride Deposited by Dc Magnetron Sputtering / K. Mokeddem ; M. Sayhi ; M. Aoucher ; A.C. Chami ; M. Abdessalem
Properties of Annealed Silicon Oxynitride Layers for Optical Applications / K. Worhoff ; G.M. Hussein ; C.G.H. Roeloffzen ; L.T.H. Hilderink
Optimum Structure of Deposited Ultra Thin Silicon Oxynitride Film to Minimize Leakage Current / K. Muraoka ; K. Kurihara ; N. Yasuda ; H. Satake
Plasma Damage in Ultra-thin Gate Oxide Induced by Dielectric Deposition Processes: An Overview on Main Mechanisms and Characterization Techniques / J.-P. Carrere ; J.-C. Oberlin ; S. Bruyere ; P. Ferreira
Electrical Characterization of Thin Oxide Layers by Impedance Spectroscopy Using Silicon/Oxide/Electrolyte (SOE) Structures / M. Chemla ; V. Bertagna ; R. Erre ; F. Rouelle ; S. Petitdidier ; D. Levy
Scaling / Film Preparation and Characterization II / VI.:
Ultrathin Silicon Oxynitride Gate Dielectrics / E.P. Gusev ; C.P. D'Emic ; T.H. Zabel ; M. Copel
Scaling Issues for Advanced SOI Devices: Gate Oxide Tunneling, Thin Buried Oxide, and Ultra-Thin Films / J. Pretet ; A. Ohata ; F. Dieudonne ; F. Allibert ; N. Bresson ; T. Matsumoto ; T. Poiroux ; J. Jomaah ; S. Cristoloveanu
The Effect of the Oxide Network Structure on the Irradiation Behavior of SiO[subscript 2] Films on Silicon / A.G. Revesz ; H.L. Hughes
Atomistic Characterization of Radical Nitridation Process on Si(100) Surfaces / Y. Yasuda ; A. Sakai ; S. Zaima
Atomic, Electronic Structure and Charge Transport Mechanism in Silicon Nitride and Oxynitride / V.A. Gritsenko ; K.A. Nasyrov
Decoupled Plasma Nitridation of Ultra-Thin Gate Oxides for 60-90 nm Technologies / M. Bidaud ; F. Boeuf ; C. Dachs ; C. Parthasarathy ; F. Guyader
A Neutron Reflectivity Study of Silicon Oxide Thin Films / A. Menelle ; M.-L Saboungi
Rapid Thermal and Anodic Oxidations of LPCVD Silicon Nitride Films / Y.-P. Lin ; J.-G. Hwu
MOSFET Degradation with Reverse Biased Source and Drain During High-Field Injection through Thin Gate Oxide / B. Patel ; R.K. Jarwal ; D. Misra
Modeling / Optimization / Characterization / VII.:
Modeling and Electrical Characterization of MOS Structures with Ultra-Thin Gate Oxide / R. Clerc ; G. Ghibaudo
Conduction Modeling of Thick Double-Layer Nitride/Oxide Dielectrics / S. Evseev
Contribution of Individual Process Steps on Particle Contamination during Plasma CVD Operation / H. Setyawan ; M. Shimada ; Y. Imajo ; K. Okuyama
Plasma Nitridation Optimization for Sub-15A Gate Dielectrics / F.N. Cubaynes ; J. Schmitz ; C. van der Marel ; J.H.M. Snijders ; A. Veloso ; A. Rothschild ; C. Olsen ; L. Date
Recovery and Reversibility of Electrical Instabilities in Double-Layer Dielectric Films / A. Cacciato
Low-Temperature Oxidation for Gate Dielectrics of Poly-Si TFTs using High-Density Surface Wave Plasma / K. Azuma ; M. Goto ; T. Okamoto ; Y. Nakata
Characterization of MIS Tunnel Junctions by Inelastic Electron Tunneling Spectroscopy (IETS) / C. Petit ; G. Salace ; D. Vuillaume
Authors Index
Subject Index
Preface
Interface Characterization / I.:
Electrical Characterization Techniques for Semiconductor-Silicon Dioxide Interface - A Review / M.J. Deen
10.

図書

図書
editors, Bernd O. Kolbesen ... [et al.] ; sponsored by the Electrochemical Society. Electronics Division
出版情報: Pennington, NJ : Electrochemical Society, c2003  xii, 556 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-3
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目次情報: 続きを見る
Preface: ALTECH 2003 "Analytical Techniques for Semiconductor Materials and Process Characterization IV"
"Impurities: Metals, Non-Metals and Organics" / Part 1:
Copper Behavior in Bulk Silicon and Associated Characterization Techniques / T. Heiser ; A. Belayachi ; J.-P. Schunck
Quantification Issues of Trace Metal Contaminants on Silicon Wafers by Means of TOF-SIMS and ICP-MS / P. Rostam-Khani ; P. Vullings ; G. Noij ; W. Claassen
Determination of the Aluminum-Induced Oxide Charge by AC Surface Photovoltage Measurements in N-Type Silicon / H. Shimizu ; M. Ikeda ; R. Shin
Characterization of Heavy Metal Contamination by Capacitance-Frequency Method / K. Hara ; M. Takahashi ; H. Yoshida ; S. Kishino
In-line Copper Contamination Monitoring Using Non-Contact Q-V-SPV Techniques / M. Bohringer ; J. Hauber ; S. Passefort ; K. Eason
Recent Developments in Nuclear Methods in Support of Semiconductor Characterization / B. Brijs ; H. Bender ; C. Huyghebaert ; T. Janssens ; W. Vandervorst ; K. Nakajima ; K. Kimura ; A. Bergmaier ; G. Dollinger ; J. A. van den Berg
Determination of Oxygen in Semiconductor Silicon by Gas Fusion Analysis GFA--Historical and Future Trends / S. Pahlke
High Sensitivity Measurement of Nitrogen in Czochralski Silicon / M. Porrini ; M. G. Pretto ; R. Scala ; V. V. Voronkov
Spark Source Mass Spectrometric Analysis of Low Carbon Contents in Crystalline Silicon / B. Wiedemann ; J. D. Meyer ; H. C. Alt ; H. Riemann
Hydrogen Contamination and Defect Generation in p-type Silicon and Silicon-Germanium Schottky Barrier Test Structures / F. Volpi ; A. R. Peaker ; I. Berbezier ; A. Ronda
Analysis of Oxygen Thermal Donor Formation in n-type Cz-Silicon / J.M. Rafi ; E. Simoen ; C. Claeys ; A. Ulyashin ; R. Job ; W. Fahrner ; J. Versluys ; P. Clauws ; M. Lozano ; F. Campabadal
The Application of Synchrotron Radiation to Semiconductor Materials Characterization / R. Barrett
Ultra-trace Analysis of Light Elements and Speciation of Minute Organic Contaminants on Silicon Wafer Surfaces by means of TXRF in Combination with NEXAFS / B. Beckhoff ; R. Fliegauf ; G. Ulm ; J. Weser ; G. Pepponi ; C. Streli ; P. Wobrauschek ; T. Ehmann ; L. Fabry ; C. Mantler ; B. Kanngiesser ; W. Malzer
TXRF Characterization of Inhomogneous Solids: Influence of Surface Morphology / N. Alov ; K. Oskolok ; A. Wittershagen ; B. O. Kolbesen
Characterization of Trace Organic Contamination on Silicon Surfaces in Semiconductor Manufacturing / K. Saga ; T. Hattori
Characterization of Advanced Semiconductor Materials by Thermal Desorption Mass Spectrometry with Atmospheric, Pressure Ionization / L. Carbonell ; G. Vereecke ; S. Van Elshocht ; M. Caymax ; M. Van Hove ; K. Maex ; P. Mertens
Analysis of Trace VOCs' in Clean Room Air with PDMS/Carboxen SPME Fibers / L. Tuduri ; V. Teetaert ; V. Desauziers ; E. Coffre ; P. Dupont ; M. Camenzind
Cleaning Chemistry with Complexing Agents (CAs): Direct Concentration Measurement of CAs with HPLC / S. Metzger ; B.O. Kolbesen
Complexing Agents (CAs) for Semiconductor Cleaning Chemistries: Characterization of CA Lifetimes by UV/VIS-Spectroscopy / O. Doll
"Thin Films" / Part 2:
Stress Management in IC Manufacturing: [mu]-Raman Spectroscopy Revisited / L.F.T. Kwakman ; D. Delille ; M. Mermoux ; A. Crisci ; G. Lucazeau
Characterization and Metrology of Novel Materials Involved in Advanced CMOS Processes / C. Wyon
Physical Characterization of Thin HfO[subscript 2] Layers by the Combined Analysis with Complementary Techniques / T. Conard ; O. Richard ; J. Petry ; C. Defranoux ; P. Boher ; N. Rochat ; P. Mack ; J. Wolstenholme ; R. Vitchev ; L. Houssiau ; J-J. Pireaux
Analytical Characterization of Process Parameter Influence on the Initial Growth and Crystallinity of Atomic Layer Deposition HfO[subscript 2] Thin Films / D. Blin ; G. Rolland ; P. Holliger ; F. Martin ; J.-F. Damlencourt ; T. Lardin ; P. Besson ; S. Haukka ; M.-N. Semeria
Application of X-Ray Fluorescence Spectrometry in Characterization of High-k Ultra-Thin Films / C. Zhao ; F. Dortu ; S. DeGendt ; M. Heyns ; W. Besling ; J. W. Maes
Characterization of Nano-Laminate Structure Using Grazing Incidence XRD and ATR-FTIR / V. Consier ; G. Roebben ; O. Van Der Biest
High-Resolution Analysis of the HfO[subscript 2]-SiO[subscript 2] Interface by Soft X-Ray Photoelectron Spectroscopy / O. Renault ; D. Samour ; J. -F. Damlencourt ; A. -M. Papon ; S. Marthon ; N. T. Barrett
Ag Electrodeposition on n-InP Followed in Situ by Photoluminescence / I. Gerard ; C. Mathieu ; P. Tran-Van ; A. Etcheberry
Characterization by Electrochemistry and Chemical Surface Analysis of an Oxide Film on n-InP / N.C. Quach ; N. Simon
Charging Effects on Ferroelectric SBT Thin Films Imaged by Non-Contact Electrostatic Force Microscopy / N. Junghans
Two Dimensional Carrier Profiling Using Scanning Capacitance Microscopy / N. Duhayon ; T. Clarysse ; D. Alvarez ; P. Eyben ; M. Fouchier ; L. Hellemans
"Non-Destructive and Optical Methods" / Part 3:
Spectroscopic Ellipsometry in the VUV Range Applied to the Characterization of Atomic Layer Deposited HfO[subscript 2], Al[subscript 2]O[subscript 3] and HfAIO[subscript x] Thin Layers for High k Dielectrics / S. Bourtauld ; J. P. Piel
Optical Characterisation of High-? Materials Deposited by ALCVD / E. Bellandi ; B. Crivelli ; A. Elbaz ; M. Alessandri
Macroscopic and Microscopic Photoluminescence Mapping System Applicable to 300 mm Wafers / Z. Li ; M. Tajima ; R. Shimidzu
In-Line and Non-Destructive Analysis of Epitaxial Si[subscript 1-x-y]Ge[subscript x]C[subscript y] by Spectroscopic Ellipsometry and Comparison with Other Established Techniques / R. Loo ; P. Meunier-Beillard ; R. Delhougne ; T. Koumoto ; L. Geenen
Study by Spectroellipsometry of the InP Surface Evolution by Cerium Acidic Solution / B. Canava ; J. Vigneron ; M. Stchakovsky ; J. P. Gaston
Characterisation of Bulk and Surface Properties in Semiconductors Using Non-Contacting Techniques / A. Castaldini ; D. Cavalcoli ; A. Cavallini ; M. Rossi
"Characterization of Defects, Technology and Devices" / Part 4:
Focused Ion Beam Analysis of Cu/Low-k Metallization Structures
Preface: ALTECH 2003 "Analytical Techniques for Semiconductor Materials and Process Characterization IV"
"Impurities: Metals, Non-Metals and Organics" / Part 1:
Copper Behavior in Bulk Silicon and Associated Characterization Techniques / T. Heiser ; A. Belayachi ; J.-P. Schunck
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