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1.

図書

図書
editors, P.C. Chang ... [et al.] ; sponsoring division, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2002  ix, 326 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-14
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2.

図書

図書
editors, R.K. Kopf ... [et al.] ; sponsoring divisions, Electronics, Sensor
出版情報: Pennington, N.J. : Electrochemical Society, c2002  ix, 362 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2002-3
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3.

図書

図書
editors, E.B. Stokes ... [et al.] ; sponsoring divisions, Electronics, Sensor
出版情報: Pennington, N.J. : Electrochemical Society, c2003  ix, 278 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-4
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目次情報: 続きを見る
Preface
III-V Optoelectronics / Session 1:
Novel Waveguide Photodetectors on InP with Integrated Light Amplification / J. Piprek ; D. Pasquariello ; D. Lasaosa ; J.E. Bowers
Improvement of Kink Characteristics of 850nm AlGaAs/GaAs Implant Vertical Cavity Emitting Lasers Utilizing Silicon Implantation Induced Disordering / H.C. Kuo ; Fang-I Lai ; Tao-Hung Hsueh ; Ya-hsien Chang ; Wen-chun Shu ; Li-Hung Lai ; S.C Wang
Effect of Post-Oxidation Annealing on VCSEL Device Performance / N.C Das ; W. Chang
Low Voltage Operation Phototransistor with InGaP/AlGaAs/GaAs Composite Emitter / S.W. Tan ; W.T. Chen ; M.Y. Chu ; W.S. Lour
III-V Devices and Processing / Session 2:
Observation of Current Gain Collapse in Large-area HBT with Rectangular Emitter and Etched Base / M.-K. Tsai ; S.-W. Tan ; W.-S. Lour ; Y.-J. Yang
Characteristics of Sulfur and InGaP-passivated InGaP/GaAs Heterojunction Bipolar Transistors
Interconnect Copper Metallization of InGaP HBT's using WN[subscript x] as the Diffusion Barrier / Shang-Wen Chang ; Edward Yi Chang ; Cheng-Shih Lee
Solvent-affected Chemistry at GaAs/sulfide Solution Interface / Mikhail V. Lebedev ; Thomas Mayer ; Wolfram Jaegermann
InP Electrochemistry / Session 3:
Anodic Behavior of InP: Film Growth, Porous Structures, and Current Oscillations / D.N. Buckley ; C. O'Dwyer ; E. Harvey ; T. Melly ; M. Serantoni ; D. Sutton ; S.B. Newcomb
A Mechanistic Study of Anodic Formation of Porous InP
Growth of Anodic Oxides on n-InP Studied by Electrochemistry and Surface Analysis: Correlation between Oxidation Methods and Passivating Properties / N. Simon ; N.C. Quach ; A. Etchberry
Localized Photoetching of n-InP, at Open-circuit Potential / Catherine Debiemme-Chouvy ; Anne Quennoy ; Isabelle Gerard
Poster Session
Investigation of Defect Passivation in 4H-SiC using Hydrogen Plasma and Effect of Post-Annealing / Myung Yoon Um ; In Sang Jeon ; Da Il Eom ; Bum Seok Kim ; Ho Keun Song ; Hoon Joo Na ; Dae Hwan Kim ; Jae Kyeong Jeong ; Hyeong Joon Kim
HRTEM Study of SiC Buried Layer formed by C+ Implantation in Silicon / Yumei Xing ; Yuehui Yu ; Zixin Lin
(Photo-)Electrochemistry at n-GaN Grown on Sapphire and on Si: A Comparitive Study / I.M. Huygens ; K. Strubbe
MOCVD Growth of InP/InGaAlAs Distributed Bragg Reflectors / J.Y. Tsai ; T.C. Lu ; S.C. Wang
Very Low Temperature Growth of c-axis oriented ZnO Thin Film on Si Substrates / Hyoun Woo Kim ; Kwang Sik Kim ; Chongmu Lee
Fabrication and NO2 Surface Photo Voltage Sensor Properties of Nanoporous Tin-Silica Film / Brian Yuliarto ; HaoShen Zhou ; Takeo Yamada ; Itaru Honma ; Keisuke Asai
Emerging Materials / Session 4:
Man-made Quantum Structures: From Superlattices to Quantum Dots / Raphael Tsu
Effects of Composition and Layer Thickness on the Magnetic and Structural Characteristics of GaMnN / G.T. Thaler ; M. Overberg ; R. Frazier ; C.R. Abernathy ; S.J. Pearton ; F. Ren ; Y.D. Park ; R. Rairigh ; J. Kelly ; J.S. Lee ; N. Theodoropoulou ; A.F. Hebard|p141
Diamond--the Next Generation Material for High Power Electronics? / A. Aleksov ; M. Schreck ; P. Schmid ; E. Kohn
III-Nitride Light Emitting Diodes / Session 5:
Deep Ultraviolet Light Emitting Diodes using AlGaN Quantum Well Active Region / M. Asif Khan ; Maxim Shatalov ; Vinod Adivarahan ; Jain Ping Zhang ; Ashay Chitnis ; Grigory Simin ; Jinwei Yang
Dramatically Improved Current Spreading in UV LED's via Si Delta-doping in the n-AlGaN Cladding Layer / S.F. LeBoeuf ; X.A. Cao ; L.B. Rowland ; J.J. Flynn ; G.R. Brandes
Carrier Capture and Recombination at Localized States in InGaN/GaN Light-Emitting Diodes / J.L. Garrett ; S.D. Arthur ; D.W. Merfeld
Wide Bandgap Materials and Electronic Devices / Session 6:
Instabilities in GaN based FET Structures--Nature and Alternative Structures / M. Neuburger ; I. Daumiller ; A. Krtschil ; A. Krost ; J. Van Nostrand ; T. Jenkins
AlGaN Power Rectifiers / J. Kim ; K. Baik ; B.P. Gila ; Y. Irokawa ; J.-I. Chyi ; S.S. Park ; Y.J. Park
Physics of Electron Injection-Induced Effects in III-Nitrides / Leonid Chernyak ; William Burdett
DC Characteristics of AlGaN/GaN Heterostructure Field-effect Transistors on Free-Standing GaN Substrates / B. Luo ; C.-C. Pan ; G.-T. Chen ; J.I. Chyi ; Y.J Park
Innovative Substrate Solutions for Wide Band Gap Materials: the Smart Cut Approach / F. Letertre ; N. Daval ; F. Templier ; L. DiCioccio ; C. Richtarch ; B. Faure ; A.M. Cartier ; I. Matko
Optical Properties of III-Nitride Materials / Session 7:
Microcathodoluminescence Characterization of III-Nitride Heterojunctions and Devices / L.J. Brillson ; G.H. Jessen ; S.H. Goss ; X.L. Sun ; S.T. Bradley ; B.D. White ; P.E. Smith ; T.E. Levin ; A.P. Young ; D.C. Look ; J.E. Van Nostrand ; G.D. Via ; J.K. Gillespie ; R.W. Dettmer ; J.S. Sewell ; R. Fitch
New Spectroscopic Data of Erbium Ions in GaN Thin Films / F. Pelle ; F. Auzel ; J.M. Zavada ; D.S. Lee ; A.J. Steckl
Spectroscopic Ellipsometry Applied to the Characterization of GaN and AlGaN/GaN Heterostructures / P. Boher ; S. Bourtault ; J.P. Piel
Infrared Photocurrent Spectroscopy of Epitaxial III-Nitride Materials / Edward B. Stokes ; Steven F. LeBoeuf
Fabrication and Characterization of GaN Nanorods / Chang-Chin Yu ; Jung-Wai Chang ; Chia-Feng Lin
Subject Index
Preface
III-V Optoelectronics / Session 1:
Novel Waveguide Photodetectors on InP with Integrated Light Amplification / J. Piprek ; D. Pasquariello ; D. Lasaosa ; J.E. Bowers
4.

図書

図書
editors, C. O'Dwyer ... [et al.] ; sponsoring division, Electronics and Photonics
出版情報: Pennington, N.J. : Electrochemical Society, c2007  xii, 631 p. ; 23 cm
シリーズ名: ECS transactions ; vol. 6, no.2
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5.

図書

図書
editors, F. Ren ... [et al.] ; sponsoring divisions, Electronics and Photonics, Sensor
出版情報: Pennington, N.J. : Electrochemical Society, c2006  ix, 479 p. ; 23 cm
シリーズ名: ECS transactions ; vol. 3, no.5
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6.

図書

図書
editors, J. J. Wang ; sponsoring division, Electronics and Photonics, Sensor
出版情報: Pennington, N.J. : Electrochemical Society, c2005  ix, 293 p. ; 24 cm
シリーズ名: ECS transactions ; vol. 1, no. 2
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7.

図書

図書
editors, H. M. Ng, A. G. Baca ; sponsoring division, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2004  xii, 600 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2004-06
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8.

図書

図書
editors, P. C. Chang ... [et al.] ; sponsoring divisions, Electronics and Physical Electrochemistry
出版情報: Pennington, N.J. : Electrochemical Society, c2005  x, 486 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2005-04
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9.

図書

図書
editors, R.F. Kopf ... [et al.] ; sponsoring divisions, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2003  x, 408 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-11
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目次情報: 続きを見る
Preface
Symposium Organizers
State-Of-The-Art Program on Compound Semiconductors XXXIX
Polarity-Selective Chemical Etching of GaN: From Nanotip Pyramids to Photonic Crystals / H. Ng ; A. Chowdhury ; W. Parz ; N. Weimann
Growth and Characterization of High Quality GaN on Silicon (111) Substrate / L. Chou ; Y. Chueh ; S. Chiou ; S. Gwo
Growth and Characterization of InGaN Quantum Dots in InGaN/GaN Superlattices / C.-P. Liu ; R. Chen ; Y.-L. Lai
Long-wavelength emission of GaInNAs Quantum Dots Grown on GaAs (001) / C.W. Tu
Development of 850nm VCSELs for OC-192 Applications / H.-C. Kuo ; Y.-H. Chang ; T.-H. Hseuh ; F. Lai ; S.-C. Wang
Development of InGaAsN-based 1300 nm VCSELs / Y.-L. Chang ; T. Takeuchi ; M. Leary ; D. Mars ; A. Tandon ; R. Twist ; S. Belov ; D. Bour ; M. Tan ; D. Roh ; Y.-K. Song ; L. Mantese ; A. Luan
Influence of a Low Composition InxGal-xN/GaN Superlattice on the Optical Properties of Blue and Green InxGal-xN Based LEDs / J. Ramer ; D. Florescu ; D. Lee ; E. Armour
Dramatic Improvements in AlGaN/GaN HEMT Device Isolation Characteristics After UV-Ozone Pre-Treatment / N. Moser ; R. Fitch ; D. Via ; A. Crespo ; M. Yannuzzi ; G. Jessen ; J. Gillespie ; B. Luo ; F. Ren ; C. Abernathy ; S. Pearton ; B. Gila
Electric Field Modulation of ZnO Film Conductance in ZnO-Based FET Structures / Y.W. Kwon ; D. NOrton
Growth of Polycrystalline HgSe by Electrochemical Atomic-layer Epitaxy (EC-ALE) / M. Mathe ; S. Cox ; U. Happek ; J. Stickney
Effect of the Intermetallic Compounds on the Joint Strength of the Optical Module / N.-K. Kim ; K.-S. Kim ; N.-H. Kim ; E.-G. Chang
Fabrication of nTiO2Thin Films by SPD Method for Efficient Photosplitting of Water / S. Khan ; S. Smith
Resource Conservation and Fab Cost Saving Through DIW and Chemical Consumption Reduction in Pre-diffusion Cleaning Processes / M. Strada
Growth and Characterization of High-Ge Content SiGe Virtual Substrates / M. Erdtmann ; M. Carroll ; J. Carlin ; T. Langdo ; R. Westhoff ; C. Leitz ; V. Yang ; M. Currie ; T. Lochtefeld ; K. Petrocelli ; C. Vineis ; H. Badawi ; M. Bulsara
Spray Pyrolytically Deposited Zn-doped p-Fe2O3 for Photoelectrolysis of Water / W. Ingler Jr.
Characterization of Silicon Carbide Electrochemical Etch in Hydrofluoric Acid Aqueous Solution / G. D'Arrigo ; C. Bongiorno ; V. Raineri
Surface Pitting and Porous Layer Growth on n-InP Anodes / C. O'Dwyer ; M. Serantoni ; D.N. Buckley
UHV-EC Studies of Wet Cleaning Procedures for GaAs Substrates for Electrodeposition / M. Muthuvel ; L. Ward
Crystal Quality Determination of Wide Bandgap Materials Using X-ray Techniques / P. Feichtinger ; K. Bowen ; B. Poust ; M. Goorsky ; M. Wojtowicz ; R. Sandhu
Mg Doping Concentration Influenced by Polarity of GaN Layer in InGaN/GaN Superlattice Structure / Y.-W. Lin
Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics symposium IV
High Performance Wide-Bandgap Photonic and Electronic Devices Grown by MBE / A.M. Dabiran ; A. Osinsky ; B. Hertog ; M.A. Kauser ; P.P. Chow ; V. Kumar ; I. Adesida
High Efficiency Nitride LEDs for use in Solid State Lighting Applications / A.J. Fischer ; D.D. Koleske ; A.A. Allerman ; M.H. Crawford ; K.H.A. Bogart ; C.C. Mitchell ; D.M. Follstaedt ; K.C. Cross ; K.W. Fullmer ; J.J. Figiel
Optical Properties of GaN/AlN Quantum Dots grown by Molecular Beam Epitaxy / A. Neogi
Cathodoluminescence Studies of Electron Injection-Induced Effects in III-Nitrides / William Burdett ; Leonid Chernyak ; Andre Osinski
Mg Surface Treatment for Optimizing Contact and Bulk Properties of p-type GaN Grown by Ammonia- Molecular-Beam Epitaxy / H. Tang ; J.A. Bardwell ; J. B. Webb ; S. Rolfe ; S. Moisa ; I. Sproule ; S. Raymond
Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics / B.P. Gila ; J. Kim ; R. Mehandru ; J.R. LaRoche ; A.H. Onstine ; C.R. Abernathy ; S.J. Pearton
Fabrication, Characterization and Applications of AlInGaN Light-Emitting Diodes / X. A. Cao ; S. D. Arthur ; A. Ebong ; S. F. LeBoeuf ; D. W. Merfeld
High Energy and Spatial Resolution EELS from GaN / I. Arslan ; S. Ogut ; N. D. Browning
Localized Quantum State Luminescence from Wide Bandgap ZnS and GaN Thin Films / Nigel Shepherd ; Ajay Kale ; William Glass ; Joo Han Kim ; David DeVito ; Mark Davidson ; Paul H. Holloway
Laser-Metallized Silicon Carbide Schottky Diodes for Millimeter Wave Detection and Frequency Mixing / I. A. Salama ; C. F. Middleton ; N. R. Quick ; G. D. Boreman ; A. Kar
Surface State Characterization Methods for SiO[subscript 2] on 4H-SiC / J. R. LaRoche ; J. W. Johnson ; B. S. Kang ; Y. Irokawa ; S. J. Pearton ; G. Chung
The Effect of External Strain on the Conductivity of AlGaN/GaN High Electron Mobility Transistors / S. Kim ; K. Baik ; B. P. Gila ; C. R. Abernathy ; C. -C. Pan ; G. -T. Chen ; J. -I. Chyi ; V. Chandrasekaran ; M. Sheplak ; T. Nishida ; S. N. G. Chu
High Performance AlGaN/GaN HEMTs with Recessed Gate / Yoshiaki Sano ; Katsuaki Kaifu ; Juro Mita ; Hideyuki Okita ; Tomohiko Sagimori ; Takashi Ushikubo ; Hiroyasu Ishikawa ; Takashi Egawa ; Takashi Jimbo
GaN Power Rectifiers and Field-Effect Transistors on Free-Standing GaN Substrates / Jihyun Kim ; S. S. Park ; Y. J. Park ; K. H. Baik|cS. J. Pearton
Chemical Sensing with GaN Devices / Martin Eickhoff ; Georg Steinhoff ; Olaf Weidemann ; Martin Hermann ; Barbara Baur ; Gerhard Mueller ; Martin Stutzmann
Magnetic Doping of III-V Nitrides and Novel Room Temperature Sensing Applications / J. M. Zavada ; R. M. Frazier ; J. Kelly ; R. Rairigh ; A. F. Hebard ; J.Y. Lin ; H.X. Jiang
Optimization of GaMnN Growth Conditions for Novel Spintronic Applications / G.T. Thaler ; R.M. Frazier ; R. Rairaigh ; A. Hebard
Growth of MgCaO on GaN / A. H. Onstine ; A. Herrero ; B. F. Ren
In-Situ Chemical Surface Treatments For The Removal of AlN/SiC Interfacial Contamination / D.O. Stodilka ; E. Lambers
Design, Fabrication, and Evaluation of High Performance Diamond-Based Power Diodes / Yasar Gurbuz ; Weng P. Kang ; Jimmy L. Davidson
Ferromagnetism In Mn- And Sn-Doped ZnO Films Grown By Pulsed Laser Deposition / M. Ivill ; D.P. Norton ; A.F. Hebard
Synthesis and Characterization of Ferromagnetic AlN and AlGaN Layers / G. T. Thaler ; M. L. Nakarmi ; J. Y. Lin ; H. X. Jiang ; R. G Wilson
Electronic Structure Of GaNP: Insights From Optical Studies / A. Buyanova ; W.M. Chen ; A. Polimeni ; M. Capizzi
Author Index
Subject Index
Preface
Symposium Organizers
State-Of-The-Art Program on Compound Semiconductors XXXIX
10.

図書

図書
editors, D. N. Buckley ... [et al.] ; sponsoring divisions, Electronics, Sensor
出版情報: Pennington, N.J. : Electrochemical Society, c2004  ix, 282 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2004-02
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