Introduction / Seizo Morita1: |
AFM in Retrospective / 1.1: |
Present Status of NC-AFM / 1.2: |
Future Prospects for NC-AFM / 1.3: |
References |
Principle of NC-AFM / Franz J. Giessibl2: |
Basics / 2.1: |
Relation to the Scanning Tunneling Microscope (STM) / 2.1.1: |
Atomic Force Microscope (AFM) / 2.1.2: |
Operating Modes of AFMs / 2.1.3: |
Scanning Speed, Signal Bandwidth and Noise / 2.1.4: |
The Four Additional Challenges Faced by AFM / 2.2: |
Jump-to-Contact and Other Instabilities / 2.2.1: |
Contribution of Long-Range Forces / 2.2.2: |
Noisein theImagingSignal / 2.2.3: |
Non-MonotonicImaging Signal / 2.2.4: |
Frequency-Modulation AFM (FM-AFM) / 2.3: |
Experimental Setup / 2.3.1: |
Applications / 2.3.2: |
Relation between Frequency Shift and Forces / 2.4: |
Generic Calculation / 2.4.1: |
Frequency Shift for a Typical Tip-Sample Force / 2.4.2: |
Calculation of the Tunneling Current for Oscillating Tips / 2.4.3: |
Noise in Frequency-Modulation AFM / 2.5: |
Noisein theFrequencyMeasurement / 2.5.1: |
Optimal Amplitude for Minimal Vertical Noise / 2.5.3: |
A Novel Force Sensor Based on a Quartz Tuning Fork / 2.6: |
Quartz Versus Silicon as a Cantilever Material / 2.6.1: |
Benefits in Clamping One of the Beams (qPlus Configuration) / 2.6.2: |
Conclusion and Outlook / 2.7: |
Semiconductor Surfaces / Yasuhiro Sugawara3: |
Instrumentation / 3.1: |
Three-Dimensional Mapping of Atomic Force / 3.2: |
Control ofAtomic Force / 3.3: |
Imaging Mechanisms for Si(100)2×1 and Si(100)2×1: H / 3.4: |
Surface Strain on an Atomic Scale / 3.5: |
Low Temperature Image of Si(100) Clean Surface / 3.6: |
Mechanical Control ofAtomPosition / 3.7: |
Atom Identification Using Covalent Bonding Force / 3.8: |
Charge Imaging with Atomic Resolution / 3.9: |
Mechanical Atom Manipulation / 3.10: |
Bias Dependence of NC-AFM Images and TunnelingCurrent Variations on Semiconductor Surfaces / Toyoko Arai ; Masahiko Tomitori4: |
Experimental Conditions / 4.1: |
Bias Dependence of NC-AFM Images for Si(111)7×7 / 4.2: |
MechanismofInvertedAtomicCorrugation / 4.2.1: |
NC-AFM Imaging and Tunneling Current / 4.2.2: |
NC-AFM Images for Ge/Si(111) / 4.3: |
Concluding Remarks / 4.4: |
Alkali Halides / Roland Bennewitz ; Martin Bammerlin ; Ernst Meyer5: |
Experimental Techniques / 5.1: |
Relevant Forces / 5.1.2: |
Imaging of Single Crystals / 5.2: |
Sample Preparation / 5.2.1: |
Atomic Corrugation / 5.2.2: |
Imaging of Defects / 5.2.3: |
Mixed Alkali Halide Crystals / 5.2.4: |
Imaging of Thin Films / 5.3: |
Preparation of Thin Films / 5.3.1: |
Atomic Resolutionat Low-Coordinated Sites / 5.3.2: |
Radiation Damage / 5.4: |
Metallization and Bubble Formation in CaF2 / 5.4.1: |
Monatomic Pits in KBr / 5.4.2: |
Dissipation Measurements / 5.5: |
Material and Site-Specific Contrast / 5.5.1: |
Using Damping for Distance Control / 5.5.2: |
Atomic Resolution Imaging on Fluorides / Michael Reichling ; Clemens Barth6: |
Tip Instabilities / 6.1: |
Flat Surfaces / 6.3: |
Step Edges / 6.4: |
Atomically Resolved Imaging of a NiO(001) Surface / Hirotaka Hosoi ; Kazuhisa Sueoka ; Kazunobu Hayakawa ; Koichi Mukasa7: |
Antiferromagnetic Nickel Oxide / 7.1: |
ExperimentalConsiderations / 7.2: |
Morphology ofthe Cleaved Surface / 7.3: |
Atomically Resolved Imaging UsingNon-CoatedandFe-CoatedSiTips / 7.4: |
Short-Range Magnetic Interaction / 7.5: |
Analysis ofthe Cross-Section / 7.6: |
Conclusion / 7.7: |
Atomic Structure, Order and Disorder on High Temperature Reconstructed α-Al2O3(0001) / 8: |
TheCleanSurface / 8.1: |
Defect Formation upon Water Exposure / 8.2: |
Self-Organized Formation of Nanoclusters / 8.3: |
NC-AFM Imaging of Surface Reconstructions and Metal Growth on Oxides / Chi Lun Pang ; Geoff Thornton9: |
1×1 to 1×3 Phase Transition of TiO2(100) / 9.1: |
Surface Reconstructions of TiO2(110) / 9.3: |
The 1×2 Reconstruction of SnO2(110) / 9.4: |
Imaging Thin Film Alumina: NiAl(110)-Al2O3 / 9.5: |
Growth of Cu and Pd on α-Al2O3(0001)- <$$> / 9.6: |
A Short-Range-Ordered Overlayer of K on TiO2(110) / 9.7: |
Conclusions / 9.8: |
Atoms and Molecules on TiO2(110) and CeO2(111) Surfaces / Ken-ichi Fukui ; Yasuhiro Iwasawa10: |
Background / 10.1: |
Brief Description of Experiments / 10.2: |
Surface Structures of TiO2(110) / 10.3: |
Adsorbed Atoms and Molecules on TiO2(110) / 10.4: |
Carboxylate Ions on TiO2(110) / 10.4.1: |
Hydrogen Adatoms on TiO2(110) / 10.4.2: |
Fluctuation ofAcetate Ions on TiO2(110) / 10.5: |
Surface Structures of CeO2(111) / 10.6: |
NC-AFM Imaging of Adsorbed Molecules / 10.7: |
NucleicAcidBasesonaGraphiteSurface / 11.1: |
Double-StrandedDNAonaMicaSurface / 11.2: |
Alkanethiol on a Au(111) Surface / 11.3: |
Organic Molecular Films / Hirofumi Yamada12: |
AFM Imaging of Molecular Films / 12.1: |
Fullerenes / 12.1.1: |
AlkanethiolSAMs / 12.1.2: |
Ferroelectric Molecular Films / 12.1.3: |
Surface Potential Measurements / 12.2: |
Technical Developments in NC-AFM Imaging ofMolecules / 12.3: |
Single-Molecule Analysis / Akira Sasahara ; Hiroshi Onishi12.4: |
Molecules and Surface / 13.1: |
Experimental Methods / 13.3: |
Alkyl-Substituted Carboxylates / 13.4: |
Numerical Simulation ofPropiolate Topography / 13.5: |
Sphere-Substrate Force / 13.5.1: |
Sphere-Carboxylate Force / 13.5.2: |
Cluster-Substrate Force / 13.5.3: |
Cluster-Carboxylate Force / 13.5.4: |
Simulated Topography / 13.5.5: |
Fluorine-Substituted Acetates / 13.6: |
Conclusions and Perspectives / 13.7: |
Low-Temperature Measurements: Principles, Instrumentation, and Application / Wolf Allers ; Alexander Schwarz ; Udo D. Schwarz14: |
Microscope Operation at Low Temperatures / 14.1: |
Drift / 14.2.1: |
Noise / 14.2.2: |
Van der Waals Surfaces / 14.3: |
HOPG(0001) / 14.4.1: |
Xenon / 14.4.2: |
Nickel Oxide / 14.5: |
Semiconductors / 14.6: |
Δf(z) Curves on Specific Atomic Sites / 14.6.1: |
Tip-Dependent Atomic Scale Contrast / 14.6.2: |
Tip-Induced Relaxation / 14.6.3: |
Magnetic Force Microscopy at Low Temperatures / 14.7: |
MFM Data Acquisition / 14.7.1: |
Domain Structure of La0.7Ca0.3MnO3-δ / 14.7.2: |
Vortices on YBa2Cu3O7-δ / 14.7.3: |
Theory of Non-Contact Atomic Force Microscopy / Masaru Tsukada ; Naruo Sasaki ; Michel Gauthier ; Katsunori Tagami ; Satoshi Watanabe14.8: |
Cantilever Dynamics / 15.1: |
Theoretical Simulation of NC-AFM Images / 15.3: |
Non-Contact Atomic Force Microscopy Images ofDynamic Surfaces / 15.4: |
Effect of Tip on Image for the Si(100)2×1: H Surface / 15.5: |
Effect of Tip on Surface Structure Change and its Relation to Dissipation / 15.6: |
Chemical Interaction in NC-AFM on Semiconductor Surfaces / San-Huang Ke ; Tsuyoshi Uda ; Kiyoyuki Terakura ; Ruben Pérez ; Ivan Štich15.7: |
First-Principles Calculation of Tip-Surface Chemical Interaction / 16.1: |
Simulation of NC-AFM Images / 16.3: |
Simulations on Various Surfaces / 16.4: |
Tip-Induced Surface Relaxation on the GaAs(110) Surface / 16.5: |
Vertical Scan Over an As Atom / 16.5.1: |
Vertical Scan Over a Ga Atom / 16.5.2: |
RelevancetoNear-Contact STM Observations / 16.5.3: |
Tip-Induced Surface Atomic Processes and EnergyDissipation in NC-AFM / 16.5.4: |
Image Contrast on GaAs(110) for a Pure Si Tip: Distance Dependence / 16.6: |
Effect of Tip Morphology on NC-AFM Images / 16.7: |
Image Contrast for the Ga/Si Tip / 16.7.1: |
Image Contrast for the As/Si Tip / 16.7.2: |
Contrast Mechanisms on InsulatingSurfaces / Adam Foster ; Alexander Shluger16.8: |
Model ofAFM and Main Forces / 17.1: |
Tip-Surface Setup / 17.2.1: |
Forces / 17.2.2: |
Simulating Scanning / 17.3: |
TheSurface / 17.3.1: |
TheTip / 17.3.2: |
Tip-Surface Interaction / 17.3.3: |
Modelling Oscillations / 17.3.4: |
Generating a Theoretical Surface Image / 17.3.5: |
The Calcium Fluoride (111) Surface / 17.4: |
Calcite: Surface Deformations During Scanning / 17.4.2: |
Studying Surface and Defect Properties / 17.5: |
Analysis of Microscopy and Spectroscopy Experiments / Hendrik Hölscher17.6: |
BasicPrinciples / 18.1: |
Origin ofthe Frequency Shift / 18.2.1: |
Calculation ofthe FrequencyShift / 18.2.3: |
Frequency Shift for Conservative Tip-Sample Forces / 18.2.4: |
Experimental NC-AFM Images of van der Waals Surfaces 355 / 18.3: |
BasicPrinciplesoftheSimulationMethod / 18.3.2: |
Applications ofthe Simulation Method / 18.3.3: |
Dynamic Force Spectroscopy / 18.4: |
Determining Forces fromFrequencies / 18.4.1: |
Analysis ofTip-Sample Interaction Forces / 18.4.2: |
Theory of Energy Dissipation into Surface Vibrations / Lev Kantorovich18.5: |
Possible Dissipation Mechanisms / 19.1: |
Adhesion Hysteresis / 19.2.1: |
Stochastic Dissipation / 19.2.2: |
Other Mechanisms / 19.2.3: |
Brownian Particle MechanismofEnergy Dissipation / 19.3: |
Brownian Particle / 19.3.1: |
Fluctuation-Dissipation Theorem / 19.3.2: |
Oscillating Tip as a Brownian Particle / 19.3.3: |
Energy Dissipated Per Oscillation Cycle / 19.3.4: |
Nonequilibrium Considerations for NC-AFM Systems / 19.4: |
Preliminary Remarks / 19.4.1: |
Mixed Quantum-Classical Representation / 19.4.2: |
Equation ofMotion for the Tip / 19.4.3: |
Estimation ofDissipation Energies in NC-AFM / 19.5: |
Comparison with STM / 19.6: |
Conclusions and Future Directions / 19.7: |
Measurement of Dissipation Induced by Tip-Sample Interactions / H.J. Hug ; A. Baratoff20: |
Experimental Aspects of Energy Dissipation / 20.1: |
ExperimentalMethods / 20.3: |
ApparentEnergyDissipation / 20.4: |
Velocity-DependentDissipation / 20.5: |
Electric-Field-MediatedJouleDissipation / 20.5.1: |
Magnetic-Field-MediatedJouleDissipation / 20.5.2: |
Magnetic-Field-MediatedDissipation / 20.5.3: |
Brownian Dissipation / 20.5.4: |
Hysteresis-Related Dissipation / 20.6: |
Magnetic-Field-Induced Hysteresis / 20.6.1: |
Hysteresis Due to Adhesion / 20.6.2: |
Hysteresis Due to Atomic Instabilities / 20.6.3: |
DissipationImagingwithAtomicResolution / 20.7: |
DissipationSpectroscopy / 20.8: |
Index / 20.9: |