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1.

図書
図書
1. Solid state
edited by Wilhelm Jost, Douglas Henderson and H. Eyring
出版情報: New York : Academic Press, 1970  xix, 780 p. ; 24 cm
シリーズ名: Physical chemistry : an advanced treatise ; v. 10
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2.

図書
図書
2. Optical properties and band structure of semiconductors. [1st ed.]
by David L. Greenaway and Günther Harbeke
出版情報: Oxford ; New York : Pergamon Press, [1968]  xi, 159 p. ; 23 cm
シリーズ名: International series of monographs in the science of the solid state ; v. 1
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3.

図書
図書
3. Introduction to the quantum theory of semiconductors (:)
[by] Marvin M. Cohen
出版情報: New York : Gordon and Breach, [1972]  ix, 299 p. ; 24 cm
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4.

図書
図書
4. Organic semiconductors
[by] Y. Okamoto and Walter Brenner
出版情報: New York : Reinhold Pub. Corp, c1964  vi, 184 p. ; 24 cm
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5.

図書
図書
5. Semiconductor material and device characterization
Dieter K. Schroder
出版情報: New York : Wiley, c1990  xv, 599 p. ; 25 cm
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目次情報: 続きを見る
Preface to Third Edition
Resistivity / 1：
Introduction / 1.1：
Two-Point Versus Four-Point Probe / 1.2：
Wafer Mapping / 1.3：
Resistivity Profiling / 1.4：
Contactless Methods / 1.5：
Conductivity Type / 1.6：
Strengths and Weaknesses / 1.7：
Resistivity as a Function of Doping Density / Appendix 1.1：
Intrinsic Carrier Density / Appendix 1.2：
References
Problems
Review Questions
Carrier and Doping Density / 2：
Capacitance-Voltage (C-V) / 2.1：
Current-Voltage (I-V) / 2.3：
Measurement Errors and Precautions / 2.4：
Hall Effect / 2.5：
Optical Techniques / 2.6：
Secondary Ion Mass Spectrometry (SIMS) / 2.7：
Rutherford Backscattering (RBS) / 2.8：
Lateral Profiling / 2.9：
Parallel or Series Connection? / 2.10：
Circuit Conversion / Appendix 2.2：
Contact Resistance and Schottky Barriers / 3：
Metal-Semiconductor Contacts / 3.1：
Contact Resistance / 3.3：
Measurement Techniques / 3.4：
Schottky Barrier Height / 3.5：
Comparison of Methods / 3.6：
Effect of Parasitic Resistance / 3.7：
Alloys for Contacts to Semiconductors / Appendix 3.2：
Series Resistance, Channel Length and Width, and Threshold Voltage / 4：
PN Junction Diodes / 4.1：
Schottky Barrier Diodes / 4.3：
Solar Cells / 4.4：
Bipolar Junction Transistors / 4.5：
MOSFETS / 4.6：
MESFETS and MODFETS / 4.7：
Threshold Voltage / 4.8：
Pseudo MOSFET / 4.9：
Schottky Diode Current-Voltage Equation / 4.10：
Defects / 5：
Generation-Recombination Statistics / 5.1：
Capacitance Measurements / 5.3：
Current Measurements / 5.4：
Charge Measurements / 5.5：
Deep-Level Transient Spectroscopy (DLTS) / 5.6：
Thermally Stimulated Capacitance and Current / 5.7：
Positron Annihilation Spectroscopy (PAS) / 5.8：
Activation Energy and Capture Cross-Section / 5.9：
Time Constant Extraction / Appendix 5.2：
Si and GaAs Data / Appendix 5.3：
Oxide and Interface Trapped Charges, Oxide Thickness / 6：
Fixed, Oxide Trapped, and Mobile Oxide Charge / 6.1：
Interface Trapped Charge / 6.3：
Oxide Thickness / 6.4：
Capacitance Measurement Techniques / 6.5：
Effect of Chuck Capacitance and Leakage Current / Appendix 6.2：
Carrier Lifetimes / 7：
Recombination Lifetime/Surface Recombination Velocity / 7.1：
Generation Lifetime/Surface Generation Velocity / 7.3：
Recombination Lifetime-Optical Measurements / 7.4：
Recombination Lifetime-Electrical Measurements / 7.5：
Generation Lifetime-Electrical Measurements / 7.6：
Optical Excitation / 7.7：
Electrical Excitation / Appendix 7.2：
Mobility / 8：
Conductivity Mobility / 8.1：
Hall Effect and Mobility / 8.3：
Magnetoresistance Mobility / 8.4：
Time-of-Flight Drift Mobility / 8.5：
MOSFET Mobility / 8.6：
Contactless Mobility / 8.7：
Semiconductor Bulk Mobilities / 8.8：
Semiconductor Surface Mobilities / Appendix 8.2：
Effect of Channel Frequency Response / Appendix 8.3：
Effect of Interface Trapped Charge / Appendix 8.4：
Charge-based and Probe Characterization / 9：
Background / 9.1：
Surface Charging / 9.3：
The Kelvin Probe / 9.4：
Applications / 9.5：
Scanning Probe Microscopy (SPM / 9.6：
Optical Characterization / 9.7：
Optical Microscopy / 10.1：
Ellipsometry / 10.3：
Transmission / 10.4：
Reflection / 10.5：
Light Scattering / 10.6：
Modulation Spectroscopy / 10.7：
Line Width / 10.8：
Photoluminescence (PL / 10.9：
Raman Spectroscopy / 10.10：
Transmission Equations / 10.11：
Absorption Coefficients and Refractive Indices for SelectedSemiconductors / Appendix 10.2：
Chemical and Physical Characterization / 11：
Electron Beam Techniques / 11.1：
Ion Beam Techniques / 11.3：
X-Ray and Gamma-Ray Techniques / 11.4：
Selected Features of Some Analytical Techniques / 11.5：
Reliability and Failure Analysis / 12：
Failure Times and Acceleration Factors / 12.1：
Distribution Functions / 12.3：
Reliability Concerns / 12.4：
Failure Analysis Characterization Techniques / 12.5：
Gate Currents / 12.6：
List of Symbols / Appendix 1：
Abbreviations and Acronyms / Appendix 2：
Index
Preface to Third Edition
Resistivity / 1：
Introduction / 1.1：
6.

図書
図書
6. Physics of III-V compounds
by Otfried Madelung ; translated by Dietrich Meyerhofer
出版情報: New York : John Wiley & Sons, c1964  xiv, 409 p. ; 24 cm
シリーズ名: Wiley series on the science and technology of materials
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7.

図書
図書
7. Microwave devices : device circuit interactions
edited by M. J. Howes, D. V. Morgan
出版情報: London ; New York : Wiley, c1976  402 p. ; 24 cm
シリーズ名: The Wiley series in solid state devices and circuits
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8.

図書
図書
8. Electrical properties of semiconductor surfaces. [1st ed.]
by Daniel R. Frankl
出版情報: Oxford ; New York : Pergamon Press, [1967]  xv, 310 p. ; 23 cm
シリーズ名: International series of monographs on semiconductors ; v. 7
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9.

図書
図書
9. Semiconductor contacts : an approach to ideas and models
by Heinz K. Henisch
出版情報: Oxford [Oxfordshire] : Clarendon Press , New York : Oxford University Press, 1984  xxi, 377 p. ; 24 cm
シリーズ名: The international series of monographs on physics ; 70
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目次情報: 続きを見る
Introductory Survey / 1：
Single Carrier Systems / 2：
Two-Carrier Systems / 3：
Reactive and Frequency-Dependent Contact Properties / 4：
Metal-Semiconductor Contacts Under Illumination / 5：
Special Topics and Problems / 6：
Introductory Survey / 1：
Single Carrier Systems / 2：
Two-Carrier Systems / 3：
10.

図書
図書
10. Semiconductors. Maruzen Asian ed
edited by N.B. Hannay
出版情報: Tokyo : Maruzen, 1960  xxiii, 767 p. ; 22 cm
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