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1.

図書
図書
1. Semiconductor devices : physics and technology (: pbk)
S.M. Sze
出版情報: New York : Wiley, c1985  xi, 523 p. ; 25 cm
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Energy Bands and Carrier Concentration
Carrier Transport Phenomena
p-n Junction
Bipolar Devices
Unipolar Devices
Microwave Devices
Photonic Devices
Crystal Growth and Epitaxy
Oxidation and Film Deposition
Diffusion and Ion Implantation
Lithography and Etching
Integrated Devices
Appendices
Index
Energy Bands and Carrier Concentration
Carrier Transport Phenomena
p-n Junction
2.

図書
図書
2. Physics of semiconductor devices. 2nd ed (: pbk)
S.M. Sze
出版情報: New York : Wiley, c1981  xii, 868 p. ; 24 cm
シリーズ名: A Wiley-Interscience publication
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Introduction
Semiconductor Physics / Part I：
Physics and Properties of Semiconductors-A Review / Chapter 1：
Crystal Structure / 1.1：
Energy Bands and Energy Gap / 1.3：
Carrier Concentration at Thermal Equilibrium / 1.4：
Carrier-Transport Phenomena / 1.5：
Phonon, Optical, and Thermal Properties / 1.6：
Heterojunctions and Nanostructures / 1.7：
Basic Equations and Examples / 1.8：
Device Building Blocks / Part II：
p-n Junctions / Chapter 2：
Depletion Region / 2.1：
Current-Voltage Characteristics / 2.3：
Junction Breakdown / 2.4：
Transient Behavior and Noise / 2.5：
Terminal Functions / 2.6：
Heterojunctions / 2.7：
Metal-Semiconductor Contacts / Chapter 3：
Formation of Barrier / 3.1：
Current Transport Processes / 3.3：
Measurement of Barrier Height / 3.4：
Device Structures / 3.5：
Ohmic Contact / 3.6：
Metal-Insulator-Semiconductor Capacitors / Chapter 4：
Ideal MIS Capacitor / 4.1：
Silicon MOS Capacitor / 4.3：
Transistors / Part III：
Bipolar Transistors / Chapter 5：
Static Characteristics / 5.1：
Microwave Characteristics / 5.3：
Related Device Structures / 5.4：
Heterojunction Bipolar Transistor / 5.5：
MOSFETS / Chapter 6：
Basic Device Characteristics / 6.1：
Nonuniform Doping and Buried-Channel Device / 6.3：
Device Scaling and Short-Channel Effects / 6.4：
MOSFET Structures / 6.5：
Circuit Applications / 6.6：
Nonvolatile Memory Devices / 6.7：
Single-Electron Transistor / 6.8：
JFETs, MESFETs, and MODFETs / Chapter 7：
JFET and MESFET / 7.1：
MODFET / 7.3：
Negative-Resistance and Power Devices / Part IV：
Tunnel Devices / Chapter 8：
Tunnel Diode / 8.1：
Related Tunnel Devices / 8.3：
Resonant-Tunneling Diode / 8.4：
IMPATT Diodes / Chapter 9：
Dynamic Characteristics / 9.1：
Power and Efficiency / 9.4：
Noise Behavior / 9.5：
Device Design and Performance / 9.6：
BARITT Diode / 9.7：
TUNNETT Diode / 9.8：
Transferred-Electron and Real-Space-Transfer Devices / Chapter 10：
Transferred-Electron Device / 10.1：
Real-Space-Transfer Devices / 10.3：
Thyristors and Power Devices / Chapter 11：
Thyristor Characteristics / 11.1：
Thyristor Variations / 11.3：
Other Power Devices / 11.4：
Photonic Devices and Sensors / Part V：
LEDs and Lasers / Chapter 12：
Radiative Transitions / 12.1：
Light-Emitting Diode (LED) / 12.3：
Laser Physics / 12.4：
Laser Operating Characteristics / 12.5：
Specialty Lasers / 12.6：
Photodetectors and Solar Cells / Chapter 13：
Photoconductor / 13.1：
Photodiodes / 13.3：
Avalanche Photodiode / 13.4：
Phototransistor / 13.5：
Charge-Coupled Device (CCD) / 13.6：
Metal-Semiconductor-Metal Photodetector / 13.7：
Quantum-Well Infrared Photodetector / 13.8：
Solar Cell / 13.9：
Sensors / Chapter 14：
Thermal Sensors / 14.1：
Mechanical Sensors / 14.3：
Magnetic Sensors / 14.4：
Chemical Sensors / 14.5：
Appendixes
List of Symbols / A：
International System of Units / B：
Unit Prefixes / C：
Greek Alphabet / D：
Physical Constants / E：
Properties of Important Semiconductors / F：
Properties of Si and GaAs / G：
Properties of SiO, and Si3N / H：
Index
Introduction
Semiconductor Physics / Part I：
Physics and Properties of Semiconductors-A Review / Chapter 1：
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