| Preface |
| Acknowledgements |
| Fundamentals of Signal Transmission on Interconnects / 1： |
| Interconnect as part of a packaging hierarchy / 1.1： |
| The physical basis of interconnects / 1.2： |
| What an interconnect is and how information is transmitted / 1.2.1： |
| The physics, a guided wave / 1.3： |
| Transmission of a pulse / 1.3.1： |
| Transverse ElectroMagnetic lines (TEM-lines) / 1.3.2： |
| Multimoding / 1.3.3： |
| The effect of dielectric / 1.3.4： |
| Frequency-dependent charge distribution / 1.3.5： |
| Dispersion / 1.3.6： |
| When an interconnect should be treated as a transmission line / 1.4： |
| The concept of radio frequency transmission lines / 1.5： |
| Primary transmission line constants / 1.6： |
| Secondary constants for transmission lines / 1.7： |
| Transmission line impedances / 1.8： |
| Reflection / 1.9： |
| Reflection and Voltage Standing-Wave Ratio (VSWR) / 1.9.1： |
| Forward and backward travelling pulses / 1.9.2： |
| Effect on signal integrity / 1.9.3： |
| Multiple conductors / 1.10： |
| Return currents / 1.11： |
| Common impedance coupling / 1.11.1： |
| Modeling of interconnects / 1.12： |
| Summary / 1.13： |
| On-Chip Interconnects for Digital Systems / 2： |
| Overview of on-chip interconnects / 2.1： |
| Types of on-chip interconnects / 2.1.1： |
| Experimental characterization of an on-chip interconnect / 2.2： |
| RC Modelling on-chip interconnects / 2.3： |
| Delay modelling / 2.3.1： |
| RC modelling / 2.3.2： |
| Modelling inductance / 2.4： |
| When are inductance effects important? / 2.4.1： |
| Inductance extraction / 2.4.2： |
| Design approaches to handling interconnect effects / 2.5： |
| Performance-driven routing / 2.5.1： |
| Transmission line return paths / 2.5.2： |
| Interconnect Technologies / 3： |
| Introductory remarks / 3.1： |
| Microwave frequencies and applications / 3.2： |
| Transmission line structures / 3.3： |
| Imageline / 3.3.1： |
| Microstrip / 3.3.2： |
| Finline / 3.3.3： |
| Inverted microstrip / 3.3.4： |
| Slotline / 3.3.5： |
| Trapped inverted microstrip / 3.3.6： |
| Coplanar waveguide (CPW) / 3.3.7： |
| Coplanar strip (CPS) and differential line / 3.3.8： |
| Stripline / 3.3.9： |
| Summary of interconnect properties / 3.3.10： |
| Substrates for hybrid microcircuits / 3.4： |
| FR4 ('printed circuit board') / 3.4.1： |
| Ceramic substrates / 3.4.2： |
| Softboard / 3.4.3： |
| Overall appraisal--alternative substrates and structures / 3.4.4： |
| Sapphire--the 'benchmark' substrate material / 3.4.5： |
| Thin-film modules / 3.5： |
| Plate-through technique / 3.5.1： |
| Etch-back technique / 3.5.2： |
| Equipment required / 3.5.3： |
| Thin resistive films / 3.5.4： |
| Thick-film modules / 3.6： |
| Pastes, printing and processing for thick-film modules / 3.6.1： |
| Monolithic technology / 3.7： |
| Introduction / 3.7.1： |
| Multilayer interconnect / 3.7.2： |
| Metallization / 3.7.3： |
| Low-k dielectrics / 3.7.4： |
| MIC and MMIC approaches compared / 3.7.5： |
| Printed circuit boards / 3.8： |
| Organic PCBs / 3.8.1： |
| Ceramic PCBs / 3.8.2： |
| Multichip modules / 3.9： |
| MCM-L substrates / 3.9.1： |
| MCM-C substrates / 3.9.2： |
| MCM-D substrates / 3.9.3： |
| Characterization of interconnects on an MCM: a case study / 3.9.4： |
| MCM Summary / 3.9.5： |
| Microstrip Design at Low Frequencies / 4： |
| The microstrip design problem / 4.1： |
| Digital interconnect / 4.1.1： |
| A transistor amplifier input network / 4.1.2： |
| The geometry of microstrip / 4.1.3： |
| The quasi-TEM mode of propagation / 4.2： |
| Static-TEM parameters / 4.3： |
| The characteristic impedance Z[subscript 0] / 4.3.1： |
| The effective microstrip permittivity [varepsilon subscript eff] / 4.3.2： |
| Synthesis: the width-to-height ratio w/h / 4.3.3： |
| Wavelength [lambda], and physical length l / 4.3.4： |
| Approximate graphically-based synthesis / 4.4： |
| Formulas for accurate static-TEM design calculations / 4.5： |
| Synthesis formulas (Z[subscript 0] and f given) / 4.5.1： |
| Analysis formulas (w/h and [varepsilon subscript r] given) / 4.5.2： |
| Overall accuracies to be expected from the previous expressions / 4.5.3： |
| Analysis techniques requiring substantial computer power / 4.6： |
| A worked example of static-TEM synthesis / 4.7： |
| Graphical determination / 4.7.1： |
| Accurately calculated results / 4.7.2： |
| Final dimensions of the microstrip element / 4.7.3： |
| Microstrip on a dielectrically anisotropic substrate / 4.8： |
| Microstrip on a ferrite substrate / 4.9： |
| Effects of strip thickness, enclosure and manufacturing tolerances / 4.10： |
| Effects of finite strip thickness / 4.10.1： |
| Effects of a metallic enclosure / 4.10.2： |
| Effects due to manufacturing tolerances / 4.10.3： |
| Pulse propagation along microstrip lines / 4.11： |
| Recommendations relating to the static-TEM approaches / 4.12： |
| The principal static-TEM synthesis formulas / 4.12.1： |
| Microstrip on a sapphire (anisotropic) substrate / 4.12.2： |
| Design corrections for non-semiconductor substrates / 4.12.3： |
| Microstrip and Stripline at High Frequencies / 5： |
| The scope of this chapter / 5.1： |
| Dispersion in microstrip / 5.2： |
| Approximate calculations accounting for dispersion / 5.3： |
| Accurate design formulas / 5.4： |
| Edwards and Owens' expressions / 5.4.1： |
| Expressions suitable for millimetre-wave design / 5.4.2： |
| Dispersion curves derived from simulations / 5.4.3： |
| Effects due to ferrite and to dielectrically anisotropic substrates / 5.5： |
| Effects of ferrite substrates / 5.5.1： |
| Effects of a dielectrically anisotropic substrate / 5.5.2： |
| Designs requiring dispersion calculations--worked examples / 5.6： |
| Field solutions / 5.7： |
| One example of a 'classic' frequency-dependent computer-based field solution / 5.7.1： |
| Analysis of arbitrary planar configurations / 5.7.2： |
| Asymmetry effects / 5.7.3： |
| Time-domain approaches / 5.7.4： |
| Frequency-dependence of the microstrip characteristic impedance / 5.8： |
| Different definitions and trends with increasing frequency / 5.8.1： |
| Use of the planar waveguide model / 5.8.2： |
| A further alternative expression / 5.8.3： |
| A design algorithm for microstrip width / 5.8.4： |
| An example derived from a simulation / 5.8.5： |
| Operating frequency limitations / 5.9： |
| The TM mode limitation / 5.9.1： |
| The lowest-order transverse microstrip resonance / 5.9.2： |
| Power losses and parasitic coupling / 5.10： |
| Q-factor and attenuation coefficient / 5.10.1： |
| Conductor losses / 5.10.2： |
| Dielectric loss / 5.10.3： |
| Radiation / 5.10.4： |
| Surface-wave propagation / 5.10.5： |
| Parasitic coupling / 5.10.6： |
| Radiation and surface-wave losses from discontinuities / 5.10.7： |
| Losses in microstrip on semi-insulating GaAs / 5.10.8： |
| Superconducting microstrips / 5.11： |
| Stripline design / 5.12： |
| Symmetrical stripline formulas / 5.12.1： |
| Design recommendations / 5.13： |
| Recommendation 1 / 5.13.1： |
| Recommendation 2 / 5.13.2： |
| Recommendation 3 / 5.13.3： |
| Recommendation 4 / 5.13.4： |
| Recommendation 5 / 5.13.5： |
| Characteristic impedance as a function of frequency / 5.13.6： |
| Computer-aided design / 5.13.7： |
| CPW Design Fundamentals / 6： |
| Introduction--properties of coplanar waveguide / 6.1： |
| Modelling CPWs / 6.2： |
| Effective permittivity / 6.2.1： |
| Characteristic impedance / 6.2.2： |
| Formulas for accurate calculations / 6.3： |
| Analysis and synthesis approaches / 6.3.1： |
| Loss mechanisms / 6.4： |
| Conductor loss / 6.4.1： |
| Radiation loss / 6.4.3： |
| CPW with intervening SiO[subscript 2] layer / 6.4.4： |
| Fundamental and theoretical considerations / 6.5： |
| Results from test runs using electromagnetic simulation / 6.5.2： |
| Experimental results / 6.5.3： |
| Discontinuities / 6.6： |
| Step changes in width and separation / 6.6.1： |
| Open-circuit / 6.6.2： |
| Symmetric series gap / 6.6.3： |
| Coplanar short-circuit / 6.6.4： |
| Right-angle bends / 6.6.5： |
| T-junctions / 6.6.6： |
| Air bridges / 6.6.7： |
| Cross-over junctions / 6.6.8： |
| Circuit elements / 6.7： |
| Interdigital capacitors and stubs / 6.7.1： |
| Filters / 6.7.2： |
| Couplers and baluns / 6.7.3： |
| Power dividers / 6.7.4： |
| Variants upon the basic CPW structure / 6.8： |
| CPW with top and bottom metal shields / 6.8.1： |
| Multilayer CPW / 6.8.2： |
| Trenched CPW on a silicon MMIC / 6.8.3： |
| Transitions between CPW and other media / 6.8.4： |
| Flip-chip realizations / 6.9： |
| Mixers, micromachined structures and other CPW issues / 6.10： |
| Mixers and frequency doubler / 6.10.1： |
| GaAs FET characterization and specialized resonators / 6.10.2： |
| Micromachined structures / 6.10.3： |
| Leakage suppression and 50 GHz interconnect / 6.10.4： |
| Light dependence of silicon FGCPW / 6.10.5： |
| Differential line and coplanar strip (CPS) / 6.11： |
| Discontinuities in Microstrip and Stripline / 6.12： |
| The main discontinuities / 7.1： |
| The foreshortened open-circuit / 7.2： |
| Equivalent end-effect length / 7.2.1： |
| Upper limit to end-effect length (quasi-static basis) / 7.2.2： |
| The series gap / 7.3： |
| Accuracy of gap capacitance calculations / 7.3.1： |
| Microstrip short-circuits / 7.4： |
| Further discontinuities / 7.5： |
| The right-angled bend or 'corner' / 7.6： |
| Mitred or 'matched' microstrip bends--compensation techniques / 7.7： |
| Step changes in width (impedance steps) / 7.8： |
| The symmetrical microstrip step / 7.8.1： |
| The asymmetrical step in microstrip / 7.8.2： |
| The narrow transverse slit / 7.9： |
| The microstrip T-junction / 7.10： |
| Compensated T-junctions / 7.11： |
| Cross-junctions / 7.12： |
| Frequency dependence of discontinuity effects / 7.13： |
| Open-circuits and series gaps / 7.13.1： |
| Other discontinuities / 7.13.2： |
| Cross- and T-junctions / 7.13.3： |
| Radial bends / 7.13.4： |
| Frequency dependence of shunt post parameters / 7.13.5： |
| Recommendations for the calculation of discontinuities / 7.14： |
| Foreshortened open-circuits / 7.14.1： |
| Series gaps / 7.14.2： |
| Short-circuits / 7.14.3： |
| Right-angled bends: mitring / 7.14.4： |
| Steps in width / 7.14.5： |
| Transverse slit / 7.14.6： |
| The T-junction / 7.14.7： |
| The asymmetric cross-junction / 7.14.8： |
| Stripline discontinuities / 7.15： |
| Bends / 7.15.1： |
| Vias / 7.15.2： |
| Junctions / 7.15.3： |
| Parallel-coupled Lines and Directional Couplers / 8： |
| Structure and applications / 8.1： |
| Parameters and initial specification / 8.2： |
| Coupled microstrip lines / 8.3： |
| Characteristic impedances in terms of the coupling factor (C) / 8.4： |
| Semi-empirical analysis formulas as a design aid / 8.5： |
| An approximate synthesis technique / 8.6： |
| A specific example: design of a 10 DB microstrip coupler / 8.7： |
| Use of Bryant and Weiss' curves / 8.7.1： |
| Synthesis using Akhtarzad's technique / 8.7.2： |
| Comparison of methods / 8.7.3： |
| Coupled-region length / 8.8： |
| Frequency response / 8.9： |
| Overall effects and Getsinger's model / 8.9.1： |
| More accurate design expressions, including dispersion / 8.9.2： |
| Complete coupling section response / 8.9.3： |
| Coupler directivity / 8.10： |
| Special coupler designs with improved performance / 8.11： |
| The 'Lange' coupler / 8.11.1： |
| The 'unfolded Lange' coupler / 8.11.2： |
| Shielded parallel-coupled microstrips / 8.11.3： |
| The use of a dielectric overlay / 8.11.4： |
| The incorporation of lumped capacitors / 8.11.5： |
| The effect of a dielectrically anisotropic substrate / 8.11.6： |
| Microstrip multiplexers / 8.11.7： |
| Multisection couplers / 8.11.8： |
| Re-entrant mode couplers / 8.11.9： |
| Patch couplers / 8.11.10： |
| Thickness effects, power losses and fabrication tolerances / 8.12： |
| Thickness effects / 8.12.1： |
| Power losses / 8.12.2： |
| Effects of fabrication tolerances / 8.12.3： |
| Planar combline directional couplers / 8.13： |
| Crosstalk and signal distortion between microstrip lines used in digital systems / 8.14： |
| Choice of structure and design recommendations / 8.15： |
| Design procedure for coupled microstrips, C [less than or equal] -3 dB / 8.15.1： |
| Relatively large coupling factors (typically C [greater than or equal] -3dB) / 8.15.2： |
| Length of the coupled region / 8.15.3： |
| Coupled structures with improved performance / 8.15.4： |
| Effects of conductor thickness, power losses and production tolerances / 8.15.6： |
| Crosstalk between microstrip lines used in digital systems / 8.15.7： |
| Post-manufacture circuit adjustment / 8.15.8： |
| Power Capabilities, Transitions and Measurement Techniques / 9： |
| Power-handling capabilities / 9.1： |
| Maximum average power P[subscript ma] under CW conditions / 9.1.1： |
| Peak (pulse) power-handling capability / 9.1.2： |
| Coaxial-to-microstrip transitions / 9.2： |
| Waveguide-to-microstrip transitions / 9.3： |
| Ridgeline transformer insert / 9.3.1： |
| Mode changer and balun / 9.3.2： |
| A waveguide-to-microstrip power splitter / 9.3.3： |
| Slot-coupled antenna waveguide-to-microstrip transition / 9.3.4： |
| Transitions between other media and microstrip / 9.4： |
| Instrumentation systems for microstrip measurements / 9.5： |
| Measurement of substrate properties / 9.6： |
| Microstrip resonator methods / 9.7： |
| The ring resonator / 9.7.1： |
| The side-coupled, open-circuit-terminated, straight resonator / 9.7.2： |
| Series-gap coupling of microstrips / 9.7.3： |
| Series-gap-coupled straight resonator pairs / 9.7.4： |
| The resonant technique due to Richings and Easter / 9.7.5： |
| The symmetrical straight resonator / 9.7.6： |
| Resonance methods for the determination of discontinuities other than open-circuits / 9.7.7： |
| Q-factor measurements / 9.8： |
| Measurements on parallel-coupled microstrips / 9.9： |
| Standing-wave indicators in microstrip / 9.10： |
| Time-Domain Reflectometry (TDR) Techniques / 9.11： |
| Interconnects and Filters in Passive RFICs and MICs / 10： |
| Radio-Frequency Integrated Circuits (RFICs) / 10.1： |
| On-chip resistors / 10.1.1： |
| On-chip capacitors / 10.1.2： |
| Planar inductors / 10.1.3： |
| Terminations and attenuators in MIC technology / 10.2： |
| Further thick and thin film passive components / 10.3： |
| Branch-type couplers and power dividers / 10.3.1： |
| Microstrip baluns / 10.3.2： |
| A strategy for low-pass microwave filter design / 10.3.3： |
| Bandpass filters / 10.3.4： |
| A worked numerical example of a parallel-coupled bandpass filter / 10.3.5： |
| CAD of parallel-coupled bandpass filters / 10.3.6： |
| Improvements to the basic edge-coupled filter response / 10.3.7： |
| Filter analysis and design including all losses / 10.3.8： |
| Bandpass filters with increased bandwidth (] 15%) / 10.3.9： |
| Further developments in bandpass filter design / 10.3.10： |
| Microstrip radial stubs / 10.3.11： |
| Dielectric resonators and filters using them / 10.3.12： |
| Spurline bandstop filters / 10.3.13： |
| Filters using synthetic periodic substrates (electromagnetic bandgap crystals) / 10.3.14： |
| Passive MICs with switching elements / 10.3.15： |
| Isolators and circulators / 10.3.16： |
| Active Digital and Analogue ICs / 11： |
| High-speed digital circuits / 11.1： |
| Clock distribution / 11.2： |
| Rotary clock distribution / 11.3： |
| Conceptual basis / 11.3.1： |
| Circuit model of a rotary clock / 11.3.2： |
| Case study: a 3 GHz rotary clock / 11.3.3： |
| Effect of copper interconnect / 11.3.4： |
| RF and microwave active devices / 11.3.5： |
| Yield and hybrid MICs / 11.5： |
| Amplifiers / 11.6： |
| Low-noise amplifier design strategy / 11.6.1： |
| High-gain narrowband amplifier design / 11.6.2： |
| Design example / 11.6.3： |
| Custom hybrid amplifiers / 11.7： |
| Standard MIC amplifier modules / 11.7.1： |
| Custom MIC amplifier modules / 11.7.2： |
| Balanced amplifiers / 11.8： |
| Amplifiers using MMIC technology / 11.9： |
| Design of a decade-bandwidth distributed amplifier / 11.9.1： |
| W-band MMIC LNAs / 11.9.2： |
| Microwave oscillators / 11.10： |
| Example of a Dielectric Resonator Oscillator / 11.10.1： |
| DRO oscillator developments / 11.10.2： |
| MMIC oscillator example / 11.10.3： |
| Active microwave filters / 11.11： |
| Phase shifters / 11.12： |
| Transmission Line Theory / Appendix A： |
| Half-, quarter- and eighth-wavelength lines / A.1： |
| Simple (narrowband) matching / A.2： |
| Equivalent two-port networks / A.3： |
| Chain (ABCD) parameters for a uniform length of loss-free transmission line / A.4： |
| Parallel coupled transmission lines / A.5： |
| Even and odd modes / A.5.1： |
| Overall parameters for couplers / A.5.2： |
| Analysis of parallel-coupled TEM-mode transmission lines / A.5.3： |
| Q-Factor / Appendix B： |
| Definition / B.1： |
| Loaded Q-factor / B.2： |
| External Q-factor of an open-circuited microstrip resonator / B.3： |
| Outline of Scattering Parameter Theory / Appendix C： |
| Network parameters / C.1： |
| Scattering parameters / C.3： |
| Scattering parameters for a two-port network / C.3.1： |
| Definitions of two-port S-parameters / C.3.2： |
| Evaluation of scattering parameters / C.3.3： |
| Measurement of scattering parameters / C.3.4： |
| S-parameter relationships in interpreting interconnect measurements / C.3.5： |
| Multiport S-parameters / C.3.6： |
| Signal-flow graph techniques and S-parameters / C.3.7： |
| Scattering transfer (or T) parameters / C.4： |
| Cascaded two-port networks: the utility of T parameters / C.4.1： |
| Capacitance Matrix Extraction / Appendix D： |
| References |
| Index |
ＥＢ
