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1.

電子ブック

EB
Paul P. L. Retgien
出版情報: Elsevier ScienceDirect Books , Elsevier, 2012
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Introduction / 1:
Sensor fundamentals / 2:
Uncertainty aspects / 3:
Resistive sensors / 4:
Capacitive sensors / 5:
Inductive and magnetic sensors / 6:
Optical sensors / 7:
Piezoelectric sensors / 8:
Acoustic sensors / 9:
Symbols and Notations / Appendix A:
Relations between quantities / Appendix B:
Basic interface circuits / Appendix C:
Introduction / 1:
Sensor fundamentals / 2:
Uncertainty aspects / 3:
2.

電子ブック

EB
Vadim F. Lvovich
出版情報: Wiley Online Library Online Books , Hoboken : John Wiley & Sons, 2012
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Preface
Fundamentals of electrochemical impedance spectroscopy / 1:
Concept of complex impedance / 1.1:
Complex dielectric, modulus, and impedance data representations / 1.2:
Electrochemical experiment: charge and material transport / 1.3:
Fundamental ambiguity of impedance spectroscopy analysis / 1.4:
Graphical representation of impedance spectroscopy data / 2:
Nyquist and Bode representation of complex impedance data for ideal electrical circuits / 2.1:
Dielectric data representation / 2.2:
Equivalent-circuit elements and modeling of the impedance phenomenon / 3:
Ideal circuit elements / 3.1:
Nonideal circuit elements / 3.2:
Circuit models for systems with two and more time constants / 3.3:
Examples of ideal equivalent circuit models / 4:
Basic R-C circuit / 4.1:
Basic R|C circuit / 4.2:
Randles RSOL - RCT\CDL circuit / 4.3:
Debye dielectric relaxation (R1)|C2circuit / 4.4:
Impedance representation of bulk-material and electrode processes / 5:
Uncompensated impedance ZOHM / 5.1:
Bulk-media impedance-RSOL, RBULK and CBULK / 5.2:
Electrochemical double-layer capacitance CDL / 5.3:
Electrochemical charge-transfer resistance RCT / 5.4:
Electrochemical sorption impedance ZSORP / 5.5:
Mass-transport impedance / 5.6:
Mixed charge-transfer, homogeneous, and diffusion-controlled kinetics / 5.7:
Distributed impedance models / 6:
Distributed RBULK|CBULK-R|CPEDL circuit model / 6.1:
General impedance models for distributed electrode processes / 6.2:
Identification of frequency ranges for conductivity and permittivity measurements / 6.3:
Impedance analysis of complex systems / 7:
Dielectric analysis of highly resistive composite materials with particle conduction / 7.1:
Dielectric analysis of ionic colloidal suspensions / 7.2:
AC electrokinetics and dielectrophoretic spectroscopy of colloidal suspensions / 7.3:
Specific adsorption and multistep heterogeneous kinetics / 7.4:
Impedance kinetics studies on porous electrodes / 7.5:
Impedance Instrumentation, testing, and data validation / 8:
Impedance test equipment / 8.1:
Single-sine impedance equipment-lock-in amplifier and frequency-response analyzer / 8.2:
Multiple-sine impedance equipment / 8.3:
Electrochemical cells / 8.4:
Linearity, causality, stability, consistency, and error analysis of impedance measurements / 8.5:
Complex nonlinear least-squares regression fitting / 8.6:
Practical approach to experimental impedance data collection and analysis / 8.7:
Selected examples of impedance-analysis applications: electroactive polymer films / 9:
The field of electroactive polymers / 9.1:
Impedance analysis of electrochemically active polymer films / 9.2:
EIS models of conducting polymer films / 9.3:
The future of electroactive polymers / 9.4:
Selected examples of EIS analysis applications: industrial colloids and lubricants / 10:
The field of industrial colloids and lubricants / 10.1:
Physical and chemical properties of lubricants / 10.2:
Degradation modes of lubricants / 10.3:
Impedance analysis of lubricants / 10.4:
Equivalent-circuit model of lubricants / 10.5:
Selected examples of EIS analysis applications: cell suspensions, protein adsorption, and implantable biomedical devices / 11:
The field of biomedical impedance applications / 11.1:
Analysis of biological suspensions by dielectric, impedance, and AC electrokinetic methods / 11.2:
Impedance analysis of protein-adsorption kinetics / 11.3:
Impedance monitoring of implanted devices / 11.4:
Selected examples of impedance-analysis applications / 12:
Impedance analysis of insulating films and coatings / 12.1:
Impedance analysis of metallic paints / 12.2:
Electrorheological fluids and charged suspensions / 12.3:
Impedance of metal-oxide films and alloys / 12.4:
Li-ion kinetics in alkaline batteries / 12.5:
Impedance analysis of polymer electrolyte fuel cells / 12.6:
Impedance corrosion monitoring / 12.7:
Impedance-spectroscopy modifications / 13:
AC voltammetry / 13.1:
Potentiodynamic and Fourier-transform impedance spectroscopy / 13.2:
Nonlinear higher-harmonic impedance analysis / 13.3:
Local EIS / 13.4:
Scanning photo-induced impedance microscopy / 13.5:
Conclusions and perspectives of EIS / 14:
Abbreviations and Symbols
Index
Preface
Fundamentals of electrochemical impedance spectroscopy / 1:
Concept of complex impedance / 1.1:
3.

電子ブック

EB
Denny D. Tang, Yuan-Jen Lee
出版情報: Cambridge University Press Online Books , Leiden : Cambridge University Press, 2010
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Preface
Acknowledgments
Basic electromagnetism / 1:
Introduction / 1.1:
Magnetic forces, poles and fields / 1.2:
Magnetic dipoles / 1.3:
Ampere's circuital law / 1.4:
Biot-Savart Law / 1.5:
Magnetic moments / 1.6:
Magnetic dipole energy / 1.7:
Magnetic flux / 1.8:
Magnetic induction / 1.9:
Classical Maxwell equations of electromagnetism / 1.10:
Inductance / 1.11:
Equation tables / 1.12:
Homework
References
Magnetic films / 2:
Origin of magnetization / 2.1:
Russell-Saunders coupling / 2.1.1:
jj coupling / 2.1.2:
Introduction of magnetic materials / 2.2:
Diamagnetism / 2.2.1:
Paramagnetism / 2.2.2:
Ferromagnetism / 2.2.3:
Antiferromagnetism / 2.2.4:
Ferrimagnetism / 2.2.5:
Ferromagnet/antiferromagnet bilayer structure / 2.3:
Intuitive picture in exchange bias / 2.3.1:
Positive exchange bias / 2.3.2:
Theories of exchange bias / 2.3.3:
AFM domain wall model / 2.3.4:
Random field model / 2.3.5:
Interlayer exchange coupling in ferromagnet/metal/ferromagnet multilayer / 2.4:
Ruderman-Kittel-Kasuya-Yosida interaction / 2.4.1:
Néel coupling / 2.4.2:
Micromagnetic simulation / 2.5:
Anisotropy energy / 2.5.1:
Exchange energy / 2.5.2:
Magnetostatic energy / 2.5.3:
Zeeman energy / 2.5.4:
Properties of patterned ferromagnetic films / 3:
Edge poles and demagnetizing field / 3.1:
Demagnetizing factor of elliptic-shaped film / 3.2.1:
Edge curling / 3.2.2:
Magnetic domain / 3.3:
Transition region between domains: domain wall / 3.3.1:
Bloch wall and Néel wall / 3.3.2:
C-state, S-state and vortex / 3.3.3:
Magnetization behavior under an external field / 3.4:
Magnetization rotation in a full film / 3.4.1:
Magnetization rotation in a patterned film / 3.4.2:
Magnetization switching / 3.5:
Magnetization rotation and switching under a field in the easy-axis direction / 3.5.1:
Magnetization rotation and switching under two orthogonal applied fields / 3.5.2:
Magnetization behavior of a synthetic antiferromagnetic film stack / 3.6:
Magnetoresistance effects / 4:
Anisotropic magnetoresistance / 4.1:
Giant magnetoresistance / 4.3:
Tunneling magnetoresistance / 4.4:
Giant tunneling magnetoresistance / 4.4.1:
Tunneling magnetoresistance in perpendicular magnetic tunneling junction / 4.4.2:
Field-write mode MRAMs / 5:
Magnetic tunnel junction RAM cell / 5.1:
Cross-point array / 5.2.1:
1T-1MTJ cell / 5.2.2:
Read signal / 5.3:
Sense reference cell / 5.3.1:
Sense amplifier / 5.3.2:
Write bit cell with magnetic field / 5.4:
Write-field conversion efficiency / 5.4.1:
Write-line cladding / 5.4.2:
Astroid-mode MRAM / 5.5:
Switching-energy barrier of Astroid-mode write / 5.5.1:
Write-error rate of a bit cell / 5.5.2:
Write soft error rate of an array of memory cells / 5.5.3:
Solution to the write disturbance problem / 5.5.4:
Toggle-mode MRAM / 5.6:
Toggle-mode cell / 5.6.1:
Switching of SAF free layer in toggle-mode write / 5.6.2:
Energy diagram of toggle operation / 5.6.3:
Write-current reduction / 5.6.4:
Characterization method of MRAM chip write performance / 5.7:
Thermally assisted field write / 5.8:
Multi-transistor cells for high-speed MRAM operation / 5.9:
Spin-torque-transfer mode MRAM / 6:
Spin polarization of free electrons in ferromagnets / 6.1:
Interaction between polarized free electrons and magnetization-macroscopic model / 6.3:
Spin-torque transfer in a multilayer thin-film stack / 6.4:
Spin-transfer torque and switching threshold current density / 6.5:
Switching characteristics and threshold in magnetic tunnel junctions / 6.6:
Regimes of write pulse width / 6.6.1:
Switching probability in the thermal regime / 6.6.2:
Spin-torque-transfer switching under a magnetic field / 6.6.3:
Magnetic back-hopping / 6.6.4:
Reliability of tunnel barriers in MTJs / 6.7:
SPICE model of MTJs and memory cells / 6.8:
Memory cell operation / 6.9:
I-V characteristics of STT memory cell during write / 6.9.1:
Read and write voltage window of STT memory cell / 6.9.2:
Sense signal margin / 6.9.3:
Write-to-breakdown-voltage margin / 6.9.4:
Thermal stability of STT memory chip / 6.10:
Nanocurrent-channel film-stack structure / 6.12:
Double-spin-filter structure / 6.12.2:
Perpendicular MTJ / 6.12.3:
Direct observation of magnetization reversal / 6.13:
Applications of MTJ-based technology / 7:
MRAM market position / 7.1:
MTJ applications in CMOS SoC chips / 7.3:
Embedded memory in logic chips / 7.3.1:
Unbalanced MTJ flip-flop / 7.3.2:
Non-volatile multiplexer / 7.3.3:
MTJ data register / 7.3.4:
System-on-chip power reduction / 7.4:
Runtime reconfigurable electronic system / 7.5:
Unit conversion table for cgs and SI units / Appendix A:
Dimensions of units of magnetism / Appendix B:
Physical constants / Appendix C:
Gaussian distribution and quantile plots / Appendix D:
Weibull distribution / Appendix E:
Time-dependent dielectric breakdown (TDDB) of magnetic tunnel junction devices / Appendix F:
Binomial distribution and Poisson distribution / Appendix G:
Defect density and the breakdown/TMR distribution of MTJ devices / Appendix H:
Fe, Ni and Co material parameters / Appendix I:
Soft error, hard fail and design margin / Appendix J:
Index
Preface
Acknowledgments
Basic electromagnetism / 1:
4.

電子ブック

EB
Jinho Choi
出版情報: Cambridge University Press Online Books , Leiden : Cambridge University Press, 2006
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List of figures
List of tables
Preface
List of symbols
List of abbreviations
Introduction / 1:
Communications in interference-limited environments / 1.1:
Issues in receiver design / 1.2:
Adaptive signal processing / 1.3:
Iterative signal processing / 1.4:
Outline of the book / 1.5:
Limitations of the book / 1.6:
ISI channels and adaptive signal processing / I:
Channel equalization for dispersive channels / 2:
ISI channels and the equalization problem / 2.1:
Linear equalizers / 2.2:
Decision feedback equalizers / 2.3:
Adaptive linear equalizers / 2.4:
Adaptive decision feedback equalizers / 2.5:
Summary and notes / 2.6:
Appendix to Chapter 2: Convergence of the LMS algorithm / 2.7:
Sequence detection with adaptive channel estimation / 3:
MLSD and the Viterbi algorithm / 3.1:
Channel estimation / 3.2:
MLSD with estimated channel / 3.3:
Per-survivor processing with adaptive channel estimation / 3.4:
Estimation and detection for fading multipath channels / 3.5:
Introduction to fading channel modeling / 4.1:
MMSE approach to estimate time-varying channels / 4.2:
Adaptive algorithms to track time-varying channels / 4.3:
Kalman filter for channel tracking / 4.4:
MLSD and PSP with channel tracking for fading channels / 4.5:
Iterative signal processing for ISI channels / 4.6:
Map detection and iterative channel estimation / 5:
Map symbol detection over ISI channels / 5.1:
ML channel estimation and the EM algorithm / 5.2:
Iterative channel estimation with MAP detection / 5.3:
ML data detection via the EM algorithm / 5.4:
Iterative receivers over static ISI channels / 5.5:
A brief overview of information theory / 6.1:
Convolutional codes / 6.2:
Iterative receivers / 6.3:
Exit chart analysis / 6.4:
Iterative receivers under time-varying channel conditions / 6.5:
Detection/decoding for unknown time-varying channels / 7.1:
Iterative receiver based on ExDD-ImC approach / 7.2:
Iterative receiver based on ExC-ImDD approach / 7.3:
Appendix to Chapter 7: Gauss-Seidel iteration / 7.4:
Other interference-limited systems / III:
CDMA systems and multiuser detection / 8:
Overview of cellular systems / 8.1:
Introduction to CDMA systems / 8.2:
Multiuser detection / 8.3:
Adaptive detectors / 8.4:
Iterative CDMA receivers / 8.5:
Structure of iterative receivers / 9.1:
MAP detection in iterative receivers / 9.2:
Approximate MAP detection within iterative receivers / 9.3:
MMSE-SC detection within iterative receivers / 9.4:
Iterative receiver with unknown interferers / 9.5:
Iterative receivers for multiple antenna systems / 9.6:
Space diversity / 10.1:
MIMO detection / 10.2:
Iterative receivers with known channels / 10.3:
Doubly iterative receivers under uncertain conditions / 10.4:
Appendix to Chapter 10: Proof of Eq. (10.71) / 10.5:
Coded OFDM and the iterative receiver / 11:
Introduction to OFDM systems / 11.1:
Coded OFDM / 11.2:
EM-based iterative channel estimation / 11.3:
Appendix to Chapter 11: Derivation of Eq. (11.6) / 11.4:
Review of signal processing and the Z-transform / Appendix 1:
Important properties of matrices and vectors / Appendix 2:
Background for probability and statistics / Appendix 3:
References
Index
ISI Channels and Adaptive Signal Processing / Part I:
Iterative Signal Processing for ISI Channels / Part II:
MAP detection and iterative channel estimation
Other Interference-Limited Systems / Part III:
Coded OFDM and iterative receiver
Appendices
List of figures
List of tables
Preface
5.

電子ブック

EB
Jia-Ming Liu
出版情報: Cambridge University Press Online Books , Cambridge : Cambridge University Press, 2005
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breface
Background / 1:
Optical waveguides / 2:
Optical fibers / 3:
Coupling of waves and modes / 4:
Optical couplers / 5:
Electro-optic devices / 6:
Magneto-optic devices / 7:
Acousto-optic devices / 8:
Nonlinear optical devices / 9:
Lasers and amplifiers / 10:
Semiconductor basics / 11:
Semiconductor lasers and light-emitting diodes / 12:
Photodetectors / 13:
Index
breface
Background / 1:
Optical waveguides / 2:
6.

電子ブック

EB
Vatchâe Vorpâerian
出版情報: Cambridge University Press Online Books , Cambridge : Cambridge University Press, 2002
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Preface
Introduction / 1:
Transfer functions / 2:
The extra element theorem / 3:
The N extra element theorem / 4:
Electronic negative feedback / 5:
High-frequency and microwave circuits / 6:
Passive filters / 7:
PWM switching DC-to-DC converters / 8:
Foundation unit
A funny thing happened
On the road
Learn a language
A tall, dark handsome stranger
Through the grapevine
Being green
Work to live!
Bestsellers
Family life / 9:
Shop till you drop / 10:
Jobhunting / 11:
Getaway holidays / 12:
Crime doesn't pay / 13:
Customer relations / 14:
Food for thought / 15:
Literary figures / 16:
Stay healthy! / 17:
Sport for all / 18:
Review unit
Preface
Introduction / 1:
Transfer functions / 2:
7.

電子ブック

EB
Emmanuel Rosencher, P. G. Piva, Borge Vinter
出版情報: Cambridge University Press Online Books , Cambridge : Cambridge University Press, 2002
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Preface
Quantum mechanics of the electron / 1:
Quantum mechanics of the photon / 2:
Quantum mechanics of the electron-photon interaction / 3:
Laser oscillations / 4:
Band structures of semiconductors / 5:
Electronic properties of semiconductors / 6:
Optical properties of semiconductors / 7:
Semiconductor heterostructures and quantum wells / 8:
Waveguides / 9:
A few building blocks for semiconductor devices / 10:
Semiconductor photodetectors / 11:
Optical frequency conversion in semiconductors / 12:
Light emitting diodes and laser diodes / 13:
Appendix
Preface
Quantum mechanics of the electron / 1:
Quantum mechanics of the photon / 2:
8.

電子ブック

EB
Kiyoshi Toko
出版情報: Cambridge University Press Online Books , Cambridge : Cambridge University Press, 2000
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Sensors and measurement / 1:
Chemical sensors / 2:
Biomimetic membrane devices / 3:
Biosensors / 4:
Odour sensors / 5:
Taste sensors / 6:
Other methods of measuring taste / 7:
Towards a sensor to reproduce human senses / 8:
Sensors and measurement / 1:
Chemical sensors / 2:
Biomimetic membrane devices / 3:
9.

電子ブック

EB
Bhaskar Krishnamachari
出版情報: Cambridge University Press Online Books , Cambridge : Cambridge University Press, 2005
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Introduction / 1:
Network deployment / 2:
Localization / 3:
Time synchronization / 4:
Wireless characteristics / 5:
Medium access and sleep scheduling / 6:
Sleep-based topology control / 7:
Energy-efficient and robust routing / 8:
Data-Centric networking / 9:
Transport reliability and congestion control / 10:
Conclusions / 11:
Introduction / 1:
Network deployment / 2:
Localization / 3:
10.

電子ブック

EB
Jasprit Singh
出版情報: Cambridge University Press Online Books , Cambridge University Press, 2005
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Preface
Introduction
Smart materials: an introduction / 1:
Input-output decision ability / 2:
Device based on conductivity changes / 2.1:
Device based on changes in optical response / 2.2:
Biological systems: nature's smart materials / 3:
Role of this book / 4:
Structural Properties
Crystaline materials / 1.1:
Basic lattice types / 1.2.1:
Some important crystal structures / 1.2.2:
Notation to denote planes and points in a lattice: Miller indices / 1.2.3:
Artificial structures: superlattices and quantum wells / 1.2.4:
Surfaces: ideal versus real / 1.2.5:
Interfaces / 1.2.6:
Defects in crystals / 1.3:
Heterostructures / 1.4:
Non-crystalline materials / 1.5:
Polycrystalline materials / 1.5.1:
Amorphous and glassy materials / 1.5.2:
Liquid crystals / 1.5.3:
Organic materials / 1.5.4:
Summary / 1.6:
Problems / 1.7:
Further reading / 1.8:
Quantum Mechanics and Electronic Levels
Need for quantum description
Some experiments that ushered in the quantum age / 2.2.1:
Schrodinger equation and physical observables / 2.3:
Wave amplitude / 2.3.1:
Waves, wavepackets, and uncertainty / 2.3.2:
Particles in an attractive potential: bound states / 2.4:
Electronic levels in a hydrogen atom / 2.4.1:
Particle in a quantum well / 2.4.2:
Harmonic oscillator problem / 2.4.3:
From atoms to molecules: coupled wells / 2.5:
Electrons in crystalline solids / 2.6:
Electrons in a uniform potential / 2.6.1:
Particle in a periodic potential: Bloch theorem / 2.6.2:
Kronig-Penney model for bandstructure / 2.6.3:
Electronic Levels in Solids / 2.7:
Occupation of states: distribution function / 3.1:
Metals, insulators, and superconductors / 3.3:
Holes in semiconductors / 3.3.1:
Bands in organic and molecular semiconductors / 3.3.2:
Normal and superconducting states / 3.3.3:
Bandstructure of some important semiconductors / 3.4:
Direct and indirect semiconductors: effective mass / 3.4.1:
Mobile carriers / 3.5:
Electrons in metals / 3.5.1:
Mobile carriers in pure semiconductors / 3.5.2:
Doping of semiconductors / 3.6:
Tailoring electronic properties / 3.7:
Electronic properties of alloys / 3.7.1:
Electronic properties of quantum wells / 3.7.2:
Localized states in solids / 3.8:
Disordered materials: extended and localized states / 3.8.1:
Charge Transport in Materials / 3.9:
An overview of electronic states / 4.1:
Transport and scattering / 4.3:
Scattering of electrons / 4.3.1:
Macroscopic transport properties / 4.4:
Velocity-electric field relations in semiconductors / 4.4.1:
Carrier transport by diffusion / 4.5:
Transport by drift and diffusion: Einstein's relation / 4.5.1:
Important devices based on conductivity changes / 4.6:
Field effect transistor / 4.6.1:
Bipolar junction devices / 4.6.2:
Transport in non-crystalline materials / 4.7:
Electron and hole transport in disordered systems / 4.7.1:
Ionic conduction / 4.7.2:
Important non-crystalline electronic devices / 4.8:
Thin film transistor / 4.8.1:
Gas sensors / 4.8.2:
Light Absorption and Emission / 4.9:
Important material systems / 5.1:
Optical processes in semiconductors / 5.3:
Optical absorption and emission / 5.3.1:
Chargei injection, quasi-Fermi levels, and recombination / 5.3.2:
Optical absorption, loss, and gain / 5.3.3:
Optical processes in quantum wells / 5.4:
Important semiconductor optoelectronic devices / 5.5:
Light detectors and solar cells / 5.5.1:
Light emitting diode / 5.5.2:
Laser diode / 5.5.3:
Organic semiconductors: optical processes & devices / 5.6:
Excitonic state / 5.6.1:
Dielectric Response: Polarization Effects / 5.7:
Polarization in materials: dielectric response / 6.1:
Dielectric response: some definitions / 6.2.1:
Ferroelectric dielectric response / 6.3:
Tailoring polarization: piezoelectric effect / 6.4:
Tailoring polarization: pyroelectric effect / 6.5:
Device applications of polar materials / 6.6:
Ferroelectric memory / 6.6.1:
Strain sensor and accelerometer / 6.6.2:
Ultrasound generation / 6.6.3:
Infrared detection using pyroelectric devices / 6.6.4:
Optical Modulation and Switching / 6.7:
Light propagation in materials / 7.1:
Modulation of optical properties / 7.3:
Electro-optic effect / 7.3.1:
Electro-absorption modulation / 7.3.2:
Optical modulation devices / 7.4:
Electro-optic modulators / 7.4.1:
Interferroelectric modulators / 7.4.2:
Magnetic Effects in Solids / 7.5:
Magnetic materials / 8.1:
Electromagnetic field magnetic materials / 8.3:
Physical basis for magnetic properties / 8.4:
Coherent transport: quantum interference / 8.5:
Aharonov Bohm effect / 8.5.1:
Quantum interference in superconducting materials / 8.5.2:
Diamagnetic and paramagnetic effects / 8.6:
Diamagnetic effect / 8.6.1:
Paramagnetic effect / 8.6.2:
Paramagnetism in the conduction electrons in metals / 8.6.3:
Ferromagnetic effects / 8.7:
Exchange interaction and ferromagnetism / 8.7.1:
Antiferromagnetic ordering / 8.7.2:
Applications in magnetic devices / 8.8:
Quantum interference devices / 8.8.1:
Application example: cooling by demagnetization / 8.8.2:
Magneto-optic modulators / 8.8.3:
Application example: magnetic recording / 8.8.4:
Giant magnetic resistance (GMR) devices / 8.8.5:
Important Properties of Semiconductors / 8.9:
P-N Diode: A Summary / B:
P-N junction / B.1:
P-N Junction under bias / B.2.1:
Fermi Golden Rule / C:
Lattice Vibrations and Phonons / D:
Defect Scattering and Mobility / E:
Alloy scattering / E.1:
Screened Coulombic scattering / E.2:
Ionized impurity limited mobility / E.3:
Alloy scattering limited mobility / E.4:
Index
Structural properties
Quantum mechanics and electronic levels
Electronic levels in solids
Charge transport
Light absorption and emission
Dielectric reponse: polarization effects
Optical modulation and switching
Magnetic effects in solids
Important properties of semiconductors
P-N diode: a summary
Fermi golden rule
Lattice vibrations and phonons
Preface
Introduction
Smart materials: an introduction / 1:
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