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1.

図書

図書
editors, K.B. Sundaram ... [et al.]
出版情報: Pennington, N.J. : Electrochemical Society, c2001  x, 286 p. ; 23 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2001-7
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Preface
Organizers
Oxide Wear-Out, Reliability, Stress and Interfaces / I:
A Review of Oxide Wearout, Breakdown, and Reliability / D. Dumin
Surface And Interface Study Of Ion Beam Deposited Silicon oxide Thin films / Heinz D. Wazenboeck ; Emmerich Bertagnolli ; Bernhard Basnar ; Juergen Smoliner ; Martin Gritsch ; Herbert Hutter ; Josef Brenner ; C. Tomastik ; Herbert Storri
Study of Inversion Layer Hole Mobility In p-Mosfet During High-field Stressing / R. Jarawal ; D. Misra
Two Limiting Thinnesses Of The Ultrathin Gate Oxide / Samares Kar
SiO[subscript 2] Stress and Interfaces / II:
The Connection Between oxide leakage currents and Si/SiO[subscript 2] Interface Trap Generation / P. M. Lenahan
Charging Damage During Plasma Enhanced Dielectric Deposition / K. Cheung
Kinetics and Mechanisms of Organic Contaminant Interactions at Silicon Surfaces in High Temperature Processes / N. Rana ; P. Raghu ; F. Shadman
SiO[subscript 2] Films and Properties / III:
Remote Plasma Deposited Gate Dielectrics on Si and SiGe Mosfets / T. Ngai ; R. Sharma ; J. Fretwell ; X. Chen ; J. Chen ; W. Brookover ; S. Banerjee
Rapid Thermal Processes of High Permittivity Films on Silicon for ULSI Gate Dielectrics Applications / S. P. Tay ; R. Sharangpani ; Y. Z. Hu
Processing of Thick Thermal Gate Oxides in Trenchs / C. T. Wu ; R. Ridley ; G. Dolny ; T. Grebs ; J. Hao ; S. Suliman ; B. Venkataraman ; O. Awadelkarim ; R. Williams ; P. Roman ; J. Ruzyllo
Electrical Properties of SiO[subscript 2]-Films Prepared by VUV Chemical Vapor Deposition / Y. Motoyama ; J. Miyano ; K. Tosikawa ; Y. Yagi ; K. Kurosawa ; A. Yokotani ; W. Sasaki
SiO[subscript 2] Film Deposition on Different Substrate Materials by Photo- CVD Using Vacuum Ultraviolet Radiation / K. Toshikawa
Silicon Nitrides/ Oxynitrides / IV:
Low Energy Ion Irradiation of Silicon: Compound Formation and Segregation of Impurities / M. Petravic ; J. S. Williams ; P. N. K. Deenapanray
Characteristics of Silicon Oxynitrides Made By ECR Plasmas / J. A. Diniz ; P. J. Tatsch ; J. Swart
Radiation Hardening of Oxynitrides Formed By Low Nitrogen Implantation into Silicon Prior to Oxidation / J. Godoy Fo
Silicon Nitrides/ Oxynitrides II / V:
Material and Process Considerations of Ultra thin Silicon (Oxy) Nitride Films Grown on Silicon and SiO[subscript 2] Surfaces / C. P. D'Emic ; E. P. Gusev ; K. K. Chan ; T. Zabel ; M. Copel ; R. Murphy ; P. Kozolowski ; J. Newbury
Silicon OxyNitride: A Versatile Material for Integrated Optics Application / K. Worhoff ; A. Driessen ; P. V. Lambeck
Characterization of Silicon Oxynitride Thin Films Deposited By ECR-PECVD / C. Simionescu ; J. Wojcik ; H. K. Haugen ; J. A. Davies ; P. Mascher
Silicon Nitrides/ Oxynitrides III / VI:
Characterization of Low- Temperature Magnetoplasma- Grown Si Oxynitride and Si Oxide / H. Ikoma
Advances in Single Wafer Chemical Deposition of Oxide and Nitride films / W. Palmer ; Z. Gabric
High Integrity Direct Oxidation/Nitridation at Low Temperatures Using Radicals / T. Ohmi ; S. Sugawa ; M. Hirayama
Silicon Nitride
Thermally Induced Stress Changes in High Density Plasma Deposited Silicon Nitride Films / R. E. Shah ; H. Baumann ; D. Serries ; M. Mikulla ; R. Keiffer
Effect of Oxygen in Deposited Ultra Thin Silicon Nitride Film on Electrical Properties / K. Muraoka ; K. Kurihara
Influence of Low- energy argon Ion Bombardment and Vacuum Annealing on the Silicon Nitride Surface Properties / I. P. Petrenko ; V. A. Gritsenko ; L. M. Logvinsky ; H. Wong
Authors Index
Subject Index
Preface
Organizers
Oxide Wear-Out, Reliability, Stress and Interfaces / I:
2.

図書

図書
editors, R.E. Sah ... [et al.] ; sponsoring divisions, Dielecric Scoeice and Technology, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2005  xiii, 588 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2005-01
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3.

図書

図書
editors, R.E. Sah ... [et al.] ; sponsoring divisions, Dielecric Scoeice and Technology, Electronics
出版情報: Pennington, N.J. : Electrochemical Society, c2003  xii, 636 p. ; 24 cm
シリーズ名: Proceedings / [Electrochemical Society] ; v. 2003-2
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Preface
Interface Characterization / I.:
Electrical Characterization Techniques for Semiconductor-Silicon Dioxide Interface - A Review / M.J. Deen
Si-SiO[subscript 2] Interface Trap Properties and Dependence with Oxide Thickness and with Electrical Stress in MOSFET's with Oxides in the 1-2 nm Range / D. Bauza ; F. Rahmoune
EPR Studies of SiC/SiO[subscript 2] Interfaces in n-type 4H-and 6H- Oxidized Porous SIC / H.J. von Bardeleben ; J.L. Cantin ; M. Mynbaeva ; S.E. Saddow ; Y. Shishkin ; R.P. Devaty ; W.J. Choyke
Related Oxides / II.:
Novel Germanium Technology and Devices for High Performance MOSFETs and Integrated On-Chip Optical Clocking / K.C. Saraswat ; C.O. Chui ; P.C. McIntyre ; B.B. Triplett
Properties of Ultrathin High-k Dielectrics on Si Probed by Electron Spin Resonance-Active Defects: Interfaces and Interlayers / A. Stesmans ; V.V. Afanas'ev
Role of Ultra Thin Silicon Oxide Interfacial Layer in High Performance High Dielectric Constant Gate Dielectrics / R. Singh ; M. Fakhruddin ; K.F. Poole ; S.V. Kondapi ; A. Gupta ; J. Narayan ; S. Kar
Quantum Mechanical Modeling of Capacitance-Voltage and Current-Voltage Behavior for SiO[subscript 2] and High-k Dielectrics / L.F. Register ; Y.-Y. Fan ; S.P. Mudanai ; S.K. Banerjee
Thermally Driven Atomic Transport in Silicon Oxynitride and High-k Films on Silicon / I.J.R. Baumvol ; F.C. Stedile ; J. Morais ; C. Krug ; C. Radtke ; E.B.O da Rosa ; K.P. Bastos ; R.P. Pezzi ; L. Miotti ; G.V. Soares
Investigations of the Structure and Stability of Alternative Gate Dielectrics / S. Stemmer ; Z.Q. Chen ; P.S. Lysaght ; J.A. Gisby ; J.R. Taylor
Comparison of Contamination Effects in Silicon Oxide with that in Hafnium Oxide and Zirconium Oxide Gate Dielectrics / F. Shadman ; P. Raghu ; N. Rana ; C. Yim ; E. Shero
Characteristics of Metal Gate MOS Capacitor with Hafnium Oxynitride Thin Film / K.-J. Choi ; S.-G. Yoon
Charge Trapping in High-Dose Ge-Implanted and Si-Implanted Silicon-Dioxide Thin Films / A.N. Nazarov ; I.N. Osiyuk ; I.P. Tyagulskii ; V.S. Lysenko ; T. Gebel ; W. Skorupa
Film Application / Device Characterization / Reliability / III.:
What Can Low-frequency Noise Learn us About the Quality of Thin-gate Dielectrics? / E. Simoen ; A. Mercha ; C. Claeys
Analysis of Short-channel MOSFET Behavior after Gate Oxide Breakdown and its Impact on Digital Circuit Reliability / G. Groeseneken ; B. Kaczer ; R. Degraeve
Cyanide Treatment to Improve Electrical Characteristics of Si-based MOS Diodes with an Ultrathin Oxide Layer / H. Kobayashi ; T. Kobayashi ; A. Asano ; O. Maida ; M. Takahashi
Process Dependence of Negative Bias Temperature Instability in PMOSFETS / S. Prasad ; E. Li ; L. Duong
Silicon Dioxide Insulating Films for Silicon-Germanium Technology / A. Vijh ; V.J. Kapoor ; R.L. Patterson ; J.E. Dickman
New Reliability Issues of CMOS Transistors with 1.3nm Thick Gate Oxide / M.F. Li ; B.J. Cho ; G. Chen ; W.Y. Loh ; D.L. Kwong
Improved Performance With Low Temperature Silicon Nitride Spacer Process / C.M. Reddy ; S.G.H. Anderson
Interface Studies / Defects / IV.:
Growth of SiO[subscript 2] at the Sc[subscript 2]O[subscript 3]/Si(100) Interface During Annealing / G.A. Botton ; E. Romain ; D. Landheer ; X. Wu ; M.-Y. Wu ; M. Lee ; Z.-H. Lu
A Review of Defect Generation in the SiO[subscript 2] and at Its Interface with Si / J.F. Zhang
Dipoles in SiO[subscript 2]: Border Traps or Not? / D.M. Fleetwood ; S.N. Rashkeev ; Z.Y. Lu ; C.J. Nicklaw ; J.A. Felix ; R.D. Schrimpf ; S.T. Pantelides
Stabilities and Electronic States of Incorporated Nitrogen Atoms at the Interface of SiO[subscript 2]/Si(001) / T. Yamasaki ; C. Kaneta
Electrical Properties and the Reliability of Silicon Nitride Gate Dielectrics Formed by Various Processes and Annealing Treatments / K.-S. Chang-Liao ; J.Y Pan ; C.L. Cheng ; T.K. Wang
Electronically Active Defects in Utra-thin Oxynitride Gate Dielectrics / D.A. Buchanan
Nitrogen Content and Interface Trap Reduction in SiO[subscript 2]/4H-SiC / K. McDonald ; R.A. Weller ; L.C. Feldman ; G.Y Chung ; C.C. Tin ; J.R. Williams
Cathodoluminescence of Thin Films of Silicon Oxide on Silicon / M.V. Zamoryanskaya ; V.I. Sokolov ; I.M. Kotina ; C.G. Konnikov
Predictive Simulation of Void Formation during the Deposition of Silicon Nitride and Silicon Dioxide Films / C. Heitzinger ; A. Sheikholeslami ; H. Puchner ; S. Selberherr
Film Preparation and Characterization I / V.:
Direct-Write Deposition of Silicon Oxide - The Express Lane towards patterned thin Films / H.D. Wanzenboeck ; S. Harasek ; E. Bertagnolli ; M. Gritsch ; H. Hutter ; J. Brenner ; H. Stoeri ; U. Grabner ; G. Hammer ; P. Pongratz
Comprehensive Optical and Compositional Characterization of Silicon-based Thin Films for Photonics / J. Wojcik ; E.A. Irving ; J.A. Davies ; W.N. Lennard ; P. Mascher
Hydrogenated Amorphous Silicon Nitride Deposited by Dc Magnetron Sputtering / K. Mokeddem ; M. Sayhi ; M. Aoucher ; A.C. Chami ; M. Abdessalem
Properties of Annealed Silicon Oxynitride Layers for Optical Applications / K. Worhoff ; G.M. Hussein ; C.G.H. Roeloffzen ; L.T.H. Hilderink
Optimum Structure of Deposited Ultra Thin Silicon Oxynitride Film to Minimize Leakage Current / K. Muraoka ; K. Kurihara ; N. Yasuda ; H. Satake
Plasma Damage in Ultra-thin Gate Oxide Induced by Dielectric Deposition Processes: An Overview on Main Mechanisms and Characterization Techniques / J.-P. Carrere ; J.-C. Oberlin ; S. Bruyere ; P. Ferreira
Electrical Characterization of Thin Oxide Layers by Impedance Spectroscopy Using Silicon/Oxide/Electrolyte (SOE) Structures / M. Chemla ; V. Bertagna ; R. Erre ; F. Rouelle ; S. Petitdidier ; D. Levy
Scaling / Film Preparation and Characterization II / VI.:
Ultrathin Silicon Oxynitride Gate Dielectrics / E.P. Gusev ; C.P. D'Emic ; T.H. Zabel ; M. Copel
Scaling Issues for Advanced SOI Devices: Gate Oxide Tunneling, Thin Buried Oxide, and Ultra-Thin Films / J. Pretet ; A. Ohata ; F. Dieudonne ; F. Allibert ; N. Bresson ; T. Matsumoto ; T. Poiroux ; J. Jomaah ; S. Cristoloveanu
The Effect of the Oxide Network Structure on the Irradiation Behavior of SiO[subscript 2] Films on Silicon / A.G. Revesz ; H.L. Hughes
Atomistic Characterization of Radical Nitridation Process on Si(100) Surfaces / Y. Yasuda ; A. Sakai ; S. Zaima
Atomic, Electronic Structure and Charge Transport Mechanism in Silicon Nitride and Oxynitride / V.A. Gritsenko ; K.A. Nasyrov
Decoupled Plasma Nitridation of Ultra-Thin Gate Oxides for 60-90 nm Technologies / M. Bidaud ; F. Boeuf ; C. Dachs ; C. Parthasarathy ; F. Guyader
A Neutron Reflectivity Study of Silicon Oxide Thin Films / A. Menelle ; M.-L Saboungi
Rapid Thermal and Anodic Oxidations of LPCVD Silicon Nitride Films / Y.-P. Lin ; J.-G. Hwu
MOSFET Degradation with Reverse Biased Source and Drain During High-Field Injection through Thin Gate Oxide / B. Patel ; R.K. Jarwal ; D. Misra
Modeling / Optimization / Characterization / VII.:
Modeling and Electrical Characterization of MOS Structures with Ultra-Thin Gate Oxide / R. Clerc ; G. Ghibaudo
Conduction Modeling of Thick Double-Layer Nitride/Oxide Dielectrics / S. Evseev
Contribution of Individual Process Steps on Particle Contamination during Plasma CVD Operation / H. Setyawan ; M. Shimada ; Y. Imajo ; K. Okuyama
Plasma Nitridation Optimization for Sub-15A Gate Dielectrics / F.N. Cubaynes ; J. Schmitz ; C. van der Marel ; J.H.M. Snijders ; A. Veloso ; A. Rothschild ; C. Olsen ; L. Date
Recovery and Reversibility of Electrical Instabilities in Double-Layer Dielectric Films / A. Cacciato
Low-Temperature Oxidation for Gate Dielectrics of Poly-Si TFTs using High-Density Surface Wave Plasma / K. Azuma ; M. Goto ; T. Okamoto ; Y. Nakata
Characterization of MIS Tunnel Junctions by Inelastic Electron Tunneling Spectroscopy (IETS) / C. Petit ; G. Salace ; D. Vuillaume
Authors Index
Subject Index
Preface
Interface Characterization / I.:
Electrical Characterization Techniques for Semiconductor-Silicon Dioxide Interface - A Review / M.J. Deen
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