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1.

図書

図書
edited by Peter Friedrichs ... [et al.]
出版情報: Weinheim : Wiley-VCH, c2010  xxii, 506 p. ; 25 cm
シリーズ名: Silicon carbide / edited by Peter Friedrichs ... [et al.] ; 1
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目次情報: 続きを見る
Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution / 1:
Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds / 2:
Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique / 3:
Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects / 4:
Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches / 5:
EPR Identification of Intrinsic Defects in 4H-SiC / 6:
Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide / 7:
Optical properties of as-grown and process-induced stack-ing faults in 4H-SiC / 8:
Characterization of defects in silicon carbide by Raman spectroscopy / 9:
Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation / 10:
Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-SiC epitaxial layers / 11:
Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation / 12:
Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation / 13:
Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors / 14:
Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems / 15:
Comparative Columnar Porous Etching Studies on n-type 6H SiC Crystalline faces / 16:
Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS / 17:
Epitaxial Graphene: an new Material / 18:
Density Functional Study of Graphene Overlayers on SiC / 19:
Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution / 1:
Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds / 2:
Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique / 3:
2.

図書

図書
日本築炉協会編
出版情報: 東京 : 日本築炉協会, 2013.1  299p ; 26cm
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