Preface / Emmanuel Defaÿ |
The Thermodynamic Approach / Chapter 1: |
Background / 1.1: |
The functions of state / 1.2: |
Linear equations, piezoelectricity / 1.3: |
Nonlinear equations, electrostriction / 1.4: |
Thermodynamic modeling of the ferroelectric-paraelectric phase transition / 1.5: |
Assumption on the elastic Gibbs energy / 1.5.1: |
Second-order transition / 1.5.2: |
Effect of stress / 1.5.3: |
First-order transition / 1.5.4: |
Conclusion / 1.6: |
Bibliography / 1.7: |
Stress Effect on Thin Films / Pierre-Eymeric JanolinChapter 2: |
Introduction / 2.1: |
Modeling the system under consideration / 2.2: |
Temperature-misfit strain phase diagrams for monodomain films / 2.3: |
Phase diagram construction from the Landau-Ginzburg-Devonshire theory / 2.3.1: |
Calculations limitations / 2.3.2: |
Domain stability map / 2.4: |
Presentation and description of the framework of study / 2.4.1: |
Main contributions to the total energy of a film / 2.4.2: |
Influence of thickness / 2.4.3: |
Macroscopic elastic energy for each type of tetragonal domain / 2.4.4: |
Indirect interaction energy / 2.4.5: |
Domain structures at equilibrium / 2.4.6: |
Temperature-misfit strain phase diagram for polydomain films / 2.4.7: |
Discussion of the nature of the "misfit strain" / 2.6: |
Mechanical misfit strain / 2.6.1: |
Thermodynamic misfit strain / 2.6.2: |
As an illustration / 2.6.3: |
Experimental validation of phase diagrams: state of the art / 2.7: |
Case study / 2.9: |
Results / 2.10: |
Evolution of the lattice parameters / 2.10.1: |
Associated stresses and strains / 2.10.2: |
Comparison between the experimental data and the temperature-misfit strain phase diagrams / 2.11: |
Thin film of PZT / 2.11.1: |
Thin layer of PbTiO3 / 2.11.2: |
Deposition and Patterning Technologies / Chrystel Deguet ; Gwenaël Le Rhun ; Bertrand Vilquin2.12: |
Deposition method / 3.1: |
Cathodic sputtering / 3.1.1: |
Ion beam sputtering / 3.1.2: |
Pulsed laser deposition / 3.1.3: |
The sol-gel process / 3.1.4: |
The MOCVD / 3.1.5: |
Molecular beam epitaxy / 3.1.6: |
Etching / 3.2: |
Wet etching / 3.2.1: |
Dry etching / 3.2.2: |
Contamination / 3.3: |
Monocrystalline thin-film transfer / 3.4: |
Smart Cut™ technology / 3.4.1: |
Bonding/thinning / 3.4.2: |
Interest in the material in a thin layer / 3.4.3: |
State of the art of the domain/applications / 3.4.4: |
An exemplary implementation / 3.4.5: |
Design of experiments / 3.5: |
The assumptions / 3.5.1: |
Reproducibility / 3.5.2: |
How can we reduce the number of experiments? / 3.5.3: |
A DOE example: PZT RF magnetron sputtering deposition / 3.5.4: |
Analysis Through X-ray Diffraction of Polycrystalline Thin Films / Patrice Gergaud3.6: |
Some reminders of x-ray diffraction and crystallography / 4.1: |
Nature of X-rays / 4.2.1: |
X-ray scattering and diffraction / 4.2.2: |
Application to powder or polycrystalline thin-films / 4.3: |
Phase analysis by X-ray diffraction / 4.4: |
Grazing incidence diffraction / 4.4.1: |
De-texturing / 4.4.2: |
Quantitative analysis / 4.4.3: |
Identification of coherent domain sizes of diffraction and micro-strains / 4.5: |
Analysis methodologies / 4.5.1: |
Identification of crystallographic textures by X-ray diffraction / 4.6: |
Texture analysis by a symmetric diffractogram / 4.6.1: |
Pole figures and orientations distribution function / 4.6.2: |
Measurement principle / 4.6.3: |
Orientations distribution function / 4.6.4: |
Determination of strains/stresses by X-ray diffraction / 4.7: |
X-ray diffraction and strain / 4.7.1: |
Determination of stresses from strains / 4.7.2: |
Specificity of the X-ray diffraction in stress analysis / 4.7.3: |
Equipment / 4.7.4: |
Example of stress identification by the sin2ψ method / 4.7.5: |
Precaution in the case of thin films / 4.7.6: |
Application example for a BaxTiO3 film / 4.7.7: |
Physicochemical and Electrical Characterization / Brahim Dkhil ; Pascale Gemeiner4.8: |
Useful characterization techniques / 5.1: |
Electron microscopy / 5.2.1: |
Spectroscopy analysis / 5.2.2: |
Ferroelectric measurement / 5.3: |
Sawyer-Tower assembly / 5.3.1: |
''Virtual ground" assembly / 5.3.2: |
Dielectric measurement / 5.4: |
Radio-Frequency Characterization / Thierry Lacrevaz5.5: |
Notions and basic concepts associated with HF / 6.1: |
Introduction to the phenomena associated with HF signals / 6.2.1: |
Lumped or distributed behavior of an electric circuit / 6.2.2: |
Notion of quadripoles: two-port circuits or four-terminal network [MÉS 85] / 6.2.3: |
Basic theoretical elements of transmission lines: HF electric model / 6.2.4: |
HF electric model of a parallel MIM capacitor / 6.2.5: |
Signal flow graph [BOR 93] / 6.2.6: |
Scattering waves / 6.2.7: |
Scattering parameters: S-parameters / 6.2.8: |
Vector network analyzer (VNA) / 6.2.9: |
Frequency analysis: HF characterization of materials / 6.3: |
Objectives / 6.3.1: |
Issues of HF measurements through a VNA / 6.3.2: |
Calibration of the measuring system / 6.3.3: |
Extraction of the propagation exponent of the transmission line: de-embedding associated with the TRL calibration / 6.3.4: |
Extraction results of the complex permittivity of materials SrTiO3andPbZrTiO3 / 6.3.5: |
Leakage Currents in PZT Capacitors / Emilien Bouyssou6.4: |
Leakage current in metal/insulator/metal structures / 7.1: |
Metal/insulator contact: definitions / 7.2.1: |
Conduction mechanisms limited by the interfaces / 7.2.2: |
Conduction mechanisms limited by the bulk of film / 7.2.3: |
Problem of leakage current measurement / 7.3: |
Relaxation current and true leakage current / 7.3.1: |
Drift of true leakage current / 7.3.2: |
Discussion / 7.3.3: |
Characterization of the relaxation current / 7.4: |
Origin of the relaxation current / 7.4.1: |
Modeling of relaxation currents / 7.4.2: |
Literature review of true leakage current in PZT / 7.4.3: |
Dynamic characterization of true leakage current: I(t, T) / 7.6: |
Study of the resistance degradation / 7.6.1: |
Study of the resistance restoration phenomenon / 7.6.2: |
Static characterization of the true leakage current: I(V,T) / 7.6.3: |
Space-charge influenced-injection model / 7.7.1: |
Quantitative description of the model / 7.7.2: |
Static modeling Jmin(V) and Jmax(V) / 7.7.3: |
Integrated Capacitors / 7.8: |
Potentiality of perovskites for RF devices: permittivity and losses / 8.1: |
RF MTM capacitors of STO and PZT / 8.2.1: |
Coplanar line waveguides on PZT / 8.2.2: |
How to perform a good integrated capacitor at RF frequencies? / 8.2.3: |
Bi-dielectric capacitors with high linearity / 8.3: |
Design / 8.3.1: |
Technology / 8.3.3: |
STO capacitors integrated on CMOS substrate by AIC technology / 8.3.4: |
Electrical tests / 8.4.1: |
Reliability of PZT Capacitors / 8.4.4: |
Accelerated aging of metal/insulator/metal structures / 9.1: |
The electrical stresses / 9.2.1: |
The breakdown / 9.2.2: |
Statistical treatment of breakdown / 9.2.3: |
Accelerated aging of PZT capacitors through CVS tests / 9.3: |
Literature review / 9.3.1: |
Statistical study of time-to-breakdown data / 9.3.2: |
Discussion: characterization strategy / 9.3.3: |
Lifetime extrapolation of PZT capacitors / 9.4: |
Determination of the temperature acceleration factor / 9.4.1: |
Determination of voltage acceleration / 9.4.2: |
Ferroelectric Tunable Capacitors / Benoit Guigues9.5: |
Overview of the tunable capacitors / 10.1: |
Applications requiring a tunable element / 10.2.1: |
The tunable capacitors / 10.2.2: |
Which material to choose? / 10.2.3: |
Types of actual tunable capacitors / 10.3: |
MTM capacitor / 10.3.1: |
Planar capacity / 10.3.2: |
Anisotropy effects / 10.3.3: |
Toward new tunable capacitors / 10.4: |
Composite ferroelectric materials / 10.4.1: |
Hybrid tunable capacitor / 10.4.2: |
FRAM Ferroelectric Memories: Basic Operations, Limitations, Innovations and Applications / Christophe Muller10.5: |
Taxonomy of non-volatile memories / 11.1: |
Present and future solutions / 11.1.1: |
Difficult penetration of a highly competitive market / 11.1.2: |
FRAM memories: basic operations and limitations / 11.2: |
Charge storage in a ferroelectric capacitor / 11.2.1: |
Ferroelectric materials / 11.2.2: |
Technologies available in 2011 / 11.3: |
Technological innovations / 11.4: |
3D ferroelectric capacitors / 11.4.1: |
Ferroelectric field effect transistors / 11.4.2: |
What about ferroelectric polymers? / 11.4.3: |
Some application areas of FRAM technology / 11.5: |
An alternative to EEPROM memories / 11.5.1: |
Ferroelectric devices for RFID systems / 11.5.2: |
Integration of Multiferroic BiFeO3 Thin Films into Modern Microelectronics / Xiaohong Zhu11.6: |
Preparation methods / 12.1: |
Chemical solution deposition / 12.2.1: |
RF magnetron sputtering / 12.2.3: |
Ferroelectricity and magnetism / 12.3: |
Ferroelectricity / 12.3.1: |
Magnetism / 12.3.2: |
Magnetoelectric coupling / 12.3.3: |
Device applications / 12.4: |
Non-volatile ferroelectric memories / 12.4.1: |
Spintronics / 12.4.2: |
Terahertz radiation / 12.4.3: |
Switchable ferroelectric diodes and photovoltaic devices / 12.4.4: |
List of Authors / 12.5: |
Index |